Flip chip nitride semiconductor light emitting diode

Abstract

In a nitride semiconductor LED, an n-doped nitride semiconductor layer is formed on a transparent substrate. An active layer is formed on the n-doped nitride semiconductor layer. A p-doped nitride semiconductor layer is formed on the active layer. A high reflectivity Ohmic contact layer of a mesh structure is formed on the p-doped nitride semiconductor layer and has a number of open areas for exposing the p-doped nitride semiconductor layer. A metal barrier layer is formed on at least a top region of the high reflectivity Ohmic contact layer. A p-bonding electrode is formed on the metal barrier layer. An n-electrode is formed on the n-doped nitride semiconductor layer.

Description

[0001] priority

[0002] This application claims priority from Korean Patent Application No. 2004-3960 filed Jan. 19, 2004, the disclosure of which is incorporated herein by reference. technical field

[0003] The present invention relates to nitride semiconductor light emitting diodes (LEDs), and more particularly, to flip-chip nitride semiconductor LEDs having excellent electrical characteristics and brightness. Background technique

[0004] Recently, a nitride semiconductor LED as an optical device for generating blue or green wavelength light is obtained by using the formula Al x In y Ga (1-x-y) N (wherein, 0≤x≤1, 0≤y≤1, and 0≤x+y≤1) is made of a semiconductor material. A nitride semiconductor crystal is grown on a substrate (for example, a sapphire substrate for nitride single crystal growth) in consideration of lattice matching. Since the sapphire substrate is electrically insulating, the p and n electrodes are formed on the same side of the final nitride semicondu...

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