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Flip chip nitride semiconductor light emitting diode

一种氮化物半导体、发光二极管的技术，应用在半导体器件、管子、管元件等方向，能够解决增加正向电压、降低发光效率、低特殊电阻等问题

Active Publication Date: 2005-07-27
SAMSUNG ELECTRO MECHANICS CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0008] However, because in figure 1 The nitride semiconductor LED 10 shown in has a planar electrode structure, and in particular, the p-electrode side ohmic contact layer 15 has a lower specific resistance than the p-doped nitride semiconductor layer 14 (for example, 5 to 10 m / cm 2 ), so this type of nitride semiconductor LED 10 has a current crowding phenomenon in which the main part of the current flowing along the ohmic contact layer 15 is concentrated at the narrow portion A close to the n-electrode indicated by the arrow.
[0009] This current crowding phenomenon increases the forward voltage, and at the same time reduces the luminous efficiency of the active layer part far from the n-electrode, reducing the brightness characteristics
Also, the current concentration portion A generates a large amount of heat, thereby significantly reducing the reliability of the LED

Method used

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  • Flip chip nitride semiconductor light emitting diode

Examples

Experimental program
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Effect test

example 1

[0076] First, after loading the sapphire substrate into the MOCVD chamber, a GaN low-temperature nucleation layer is grown as a buffer layer. Then, an n-doped semiconductor layer of an n-doped GaN film and an n-doped AlGaN layer, an active layer having a plurality of quantum well structures of InGaN / GaN films, and a p-doped GaN film are formed on the buffer layer p-doped nitride semiconductor layer to obtain blue LED.

[0077] Next, a high-reflectivity ohmic contact layer having a network structure with an opening area ratio of about 30% was formed on the p-doped nitride semiconductor layer, and the resulting structure was then heat-treated at a temperature of about 500°C. The high-reflectivity ohmic contact layer of Inventive Example 1 was made of Ni / Ag. Here, the opening area ratio means the ratio of the opening area to the entire area (ie, the area surrounded by the outermost periphery), as generally used in this specification.

[0078] Then, a metal barrier layer is form...

example 2

[0081] In Invention Example 2, a flip-chip nitride semiconductor LED was fabricated according to the same conditions as Invention Example 1, except that the high-reflectivity ohmic contact layer of the mesh structure was patterned to have an opening area ratio of about 50%. The thus prepared flip-chip nitride semiconductor LED is connected to a supporting substrate having a lead pattern such as Figure 3B As shown, a flip-chip light-emitting device was produced.

example 3

[0083] In Inventive Example 3, a flip-chip nitride semiconductor LED was fabricated according to the same conditions as Inventive Example 1, except that the high-reflectivity ohmic contact layer of the mesh structure was patterned to have an opening area ratio of about 70%. The thus prepared flip-chip nitride semiconductor LED is connected to a supporting substrate having a lead pattern such as Figure 3B As shown, a flip-chip light-emitting device was produced.

[0084] comparison example

[0085] In the comparative example, flip-chip nitride semiconductor LEDs were prepared according to the same conditions as Inventive Examples 1 to 3, except for a high-reflectivity ohmic contact layer formed in a conventional structure with the same entire area, without a separate mesh structure. composition process. The thus prepared flip-chip nitride semiconductor LED is connected to a supporting substrate having a lead pattern such as Figure 3B As shown, a flip-chip light-emitting de...

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Abstract

In a nitride semiconductor LED, an n-doped nitride semiconductor layer is formed on a transparent substrate. An active layer is formed on the n-doped nitride semiconductor layer. A p-doped nitride semiconductor layer is formed on the active layer. A high reflectivity Ohmic contact layer of a mesh structure is formed on the p-doped nitride semiconductor layer and has a number of open areas for exposing the p-doped nitride semiconductor layer. A metal barrier layer is formed on at least a top region of the high reflectivity Ohmic contact layer. A p-bonding electrode is formed on the metal barrier layer. An n-electrode is formed on the n-doped nitride semiconductor layer.

Description

[0001] priority [0002] This application claims priority from Korean Patent Application No. 2004-3960 filed Jan. 19, 2004, the disclosure of which is incorporated herein by reference. technical field [0003] The present invention relates to nitride semiconductor light emitting diodes (LEDs), and more particularly, to flip-chip nitride semiconductor LEDs having excellent electrical characteristics and brightness. Background technique [0004] Recently, a nitride semiconductor LED as an optical device for generating blue or green wavelength light is obtained by using the formula Al x In y Ga (1-x-y) N (wherein, 0≤x≤1, 0≤y≤1, and 0≤x+y≤1) is made of a semiconductor material. A nitride semiconductor crystal is grown on a substrate (for example, a sapphire substrate for nitride single crystal growth) in consideration of lattice matching. Since the sapphire substrate is electrically insulating, the p and n electrodes are formed on the same side of the final nitride semicondu...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/06H01L33/10H01L33/32H01L33/38H01L33/46H01L33/62
CPCY10S257/918H01L33/44H01L33/32H01L33/387H01L33/405H01L2224/14H01L2224/16225F16L19/0218F16L43/00F16L41/021
Inventor 金显炅郑宁俊金容天
Owner SAMSUNG ELECTRO MECHANICS CO LTD
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