6results about How to "Lower forward voltage" patented technology

A hybrid trench Schottky trench-type superbarrier diode and its fabrication method are disclosed. This relates to the field of semiconductor technology. From bottom to top, the diode comprises: a cathode electrode layer, an N+ substrate layer, an N- epitaxial layer, wherein the N- epitaxial layer has a plurality of spaced-apart P-type implantation regions; each P-type implantation region includes conductive channels and P-body regions spaced-apart from top to bottom; a dielectric layer, a silicon dioxide layer, wherein the silicon dioxide layer has a plurality of trenches extending downward from its top to the P-body regions; and an anode electrode layer, the bottom of which extends to the P-body regions through trenches. This invention improves the on-resistance characteristics of the device during forward operation, thereby enhancing the device's performance and reliability.

The present invention relates to a silicon carbide trench junction barrier Schottky diode and a preparation method, belonging to the technical field of semiconductor devices. The silicon carbide trench junction barrier Schottky diode comprises, from bottom to top, an ohmic contact cathode metal layer; a silicon carbide substrate layer of a first conductivity type; a first epitaxial layer of a first conductivity type, a plurality of ion implantation regions of a second conductivity type; a second epitaxial layer of a first conductivity type, which is epitaxially grown on the first epitaxial layer of the first conductivity type and grown on the plurality of ion implantation regions of the second conductivity type; a plurality of trenches formed in the ion implantation regions of the second conductivity type; a Schottky metal layer and an anode metal layer. The Schottky diode of the present invention has a simple process flow, low leakage current and high breakdown voltage, and low forward conduction voltage, and good comprehensive performance.

A light-emitting element includes: a semiconductor stack having a first light-emitting unit comprising nitride semiconductors including a first n-side semiconductor layer, a first p-side semiconductor layer, and a first active layer disposed between the first n-side semiconductor layer and the first p-side semiconductor layer, a second light-emitting unit comprising nitride semiconductors including a second n-side semiconductor layer, a second p-side semiconductor layer, and a second active layer disposed between the second n-side semiconductor layer and the second p-side semiconductor layer, and a tunnel junction layer disposed between the first p-side semiconductor layer and the second n-side semiconductor layer; an n-side electrode electrically connected to the first n-side semiconductor layer; and a p-side electrode electrically connected to the second p-side semiconductor layer, the first n-side semiconductor layer including a first stack part of a first n-type impurity concentration having a multilayer structure in which first layers and second layers having a different lattice constant from that of the first layers are alternately stacked, the second n-side semiconductor layer including a second stack part of a second n-type impurity concentration having a multilayer structure in which third layers and fourth layers having a different lattice constant from that of the third layers are alternately stacked, and the second n-type impurity concentration being higher than the first n-type impurity concentration.

This invention provides a nitride semiconductor light-emitting element that can reduce the forward voltage in a light-emitting element formed by tunnel bonding of multiple semiconductor portions emitting ultraviolet light. The light-emitting element includes: a first semiconductor portion having a first n-side semiconductor layer, a first active layer disposed on the first n-side semiconductor layer and emitting ultraviolet light, and a first p-side semiconductor layer disposed on the first active layer; and a second semiconductor portion having a second n-side semiconductor layer disposed on the first semiconductor portion, a second active layer disposed on the second n-side semiconductor layer and emitting ultraviolet light, and a second p-side semiconductor layer disposed on the second active layer. The first p-side semiconductor layer includes a first layer containing Al and a second layer disposed on the first layer, the second layer containing Al and containing p-type impurities; the second p-side semiconductor layer includes a third layer containing Al and a fourth layer disposed on the third layer, the fourth layer containing Al and containing p-type impurities; the second n-side semiconductor layer is tunnel bonded to the second layer; and the thickness of the first layer is thinner than the thickness of the third layer.

The invention relates to a cascade diode circuit. The cascade diode circuit comprises a normally-open transistor, a low-voltage diode and a high-voltage diode, the normally open transistor is provided with a grid electrode, a drain electrode and a source electrode. The low voltage diode has a cathode connected to the source of the normally open transistor and an anode connected to the gate of the normally open transistor. The high voltage diode has a cathode connected to the drain of the normally open transistor and an anode connected to a node between the normally open transistor and the low voltage diode.