3results about How to "Lower forward voltage" patented technology

A hybrid trench Schottky trench-type superbarrier diode and its fabrication method are disclosed. This relates to the field of semiconductor technology. From bottom to top, the diode comprises: a cathode electrode layer, an N+ substrate layer, an N- epitaxial layer, wherein the N- epitaxial layer has a plurality of spaced-apart P-type implantation regions; each P-type implantation region includes conductive channels and P-body regions spaced-apart from top to bottom; a dielectric layer, a silicon dioxide layer, wherein the silicon dioxide layer has a plurality of trenches extending downward from its top to the P-body regions; and an anode electrode layer, the bottom of which extends to the P-body regions through trenches. This invention improves the on-resistance characteristics of the device during forward operation, thereby enhancing the device's performance and reliability.

This invention provides a nitride semiconductor light-emitting element that can reduce the forward voltage in a light-emitting element formed by tunnel bonding of multiple semiconductor portions emitting ultraviolet light. The light-emitting element includes: a first semiconductor portion having a first n-side semiconductor layer, a first active layer disposed on the first n-side semiconductor layer and emitting ultraviolet light, and a first p-side semiconductor layer disposed on the first active layer; and a second semiconductor portion having a second n-side semiconductor layer disposed on the first semiconductor portion, a second active layer disposed on the second n-side semiconductor layer and emitting ultraviolet light, and a second p-side semiconductor layer disposed on the second active layer. The first p-side semiconductor layer includes a first layer containing Al and a second layer disposed on the first layer, the second layer containing Al and containing p-type impurities; the second p-side semiconductor layer includes a third layer containing Al and a fourth layer disposed on the third layer, the fourth layer containing Al and containing p-type impurities; the second n-side semiconductor layer is tunnel bonded to the second layer; and the thickness of the first layer is thinner than the thickness of the third layer.