High efficiency power conversion circuits
a power conversion circuit and high efficiency technology, applied in the field of high frequency switched mode electronic power converters, can solve the problems of large switching loss, low cost competitiveness of silicon devices, and inability to gain wide acceptance of high-volume commercial power supplies, so as to reduce the volume of total magnetics, reduce winding voltage stresses and semiconductor component stresses, and high voltage handling capability
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[0075]FIG. 1(a) illustrates a composite high voltage schottky rectifier circuit with its three essential components, a low voltage schottky diode, a dc gate voltage source, and a high voltage power mosfet. FIG. 1(d) illustrates the same circuit with its intrinsic parasitic capacitances. The intrinsic parasitic capacitances of consequence include the schottky diode capacitance, CCA, the gate source capacitance of the power mosfet, CGS, and the drain source capacitance of the power mosfet, CDS. Each of these intrinsic parasitic capacitances are voltage dependent, being larger in capacitance with lower applied voltage and smaller in capacitance at higher applied voltage. The power mosfet also has a drain gate parasitic capacitance which is not illustrated because its effects are insignificant and inconsequential. In a conducting state the schottky diode is forward biased and a voltage equal to the gate voltage source plus the forward voltage of the schottky diode is applied between the...
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