63 results about "Gate source capacitance" patented technology

The invention relates to the technical field of semiconductors, in particular to a shield gate groove type power device and a preparation method thereof. The method comprises the following steps: preparing a semiconductor wafer to be processed; performing grid polycrystalline silicon deposition on the upper surface of the epitaxial layer of the semiconductor wafer and the groove structure, so that a groove is formed above the groove structure; etching the grid polycrystalline silicon in the groove until the grid polycrystalline silicon reaches the oxide layer above the source polycrystalline silicon to form two sub-grids, and forming an inter-grid groove between the two sub-grids; performing planarization processing on the grid polycrystalline silicon until the oxide layer on the surface of the epitaxial layer is exposed; forming an oxide film dielectric layer which covers the oxide layer covering the upper surface of the epitaxial layer and the grid polycrystalline silicon; and performing planarization processing on the oxide film dielectric layer to obtain a flat surface of the oxide film dielectric layer. According to the shield gate trench type power device and the preparation method thereof provided by the invention, the gate-source overlapping area can be adjusted, the gate-source capacitance is reduced, and the freedom degree of device preparation is increased.

The invention relates to the technical field of semiconductors, in particular to a shield gate trench MOS (Metal Oxide Semiconductor) device, which comprises a substrate, an epitaxial layer, a trench, a first interlayer dielectric layer, a second interlayer dielectric layer, a gate oxide layer, a first shield gate field oxide layer and a second shield gate field oxide layer, the control grid, the first shielding grid and the second shielding grid are located in the groove; the control grid, the first shielding grid and the second shielding grid are of an up-down structure. The second shield grid is located between the first shield grid and the control grid; the first interlayer dielectric layer is located between the first shielding grid and the second shielding grid; the second interlayer dielectric layer is located between the second shield gate and the control gate; the gate oxide layer is located between the control gate and the inner wall of the groove; the first shield gate field oxide layer is located between the first shield gate and the inner wall of the trench; the second shield gate field oxide layer is located between the second shield gate and the inner wall of the trench. The device reduces the gate-drain capacitance, increases the gate-source capacitance, and improves the EMI performance.

Methods and devices to improve nonlinearity performance of low noise amplifiers (LNAs) are disclosed. The described methods and devices reduce the capacitive loading of the LNA amplifying devices on the bypass path of the LNAs when operating in the bypass mode. This is performed by decoupling the active devices from ground to put the amplifying devices in a floating state, thus minimizing the impact of the gate-source capacitances of the amplifying devices on the overall linear performance of the LNA operating in the bypass mode.

The utility model provides a silicon carbide VDMOS with high drain voltage impact resistance. A drift layer is connected to a silicon carbide substrate; a current sharing layer and a plurality of masking layers are arranged in the drift layer, the masking layers are located above the current sharing layer, and the multiple masking layers are uniformly arranged at intervals; the N-type region is connected to the drift layer; the P-type well region is connected to the N-type region, the P-type well region is connected to the drift layer, and an N-type source region is arranged in the P-type well region; the insulating dielectric layer is connected with the drift layer, and is connected to the P-type well region and the N-type source region; a groove is formed in the insulating medium layer; the gate metal layer is arranged in the groove; the source metal layer is respectively connected with the N-type region, the P-type well region and the N-type source region; the drain metal layer is connected to the silicon carbide substrate; the drain voltage impact resistance of the device is improved, the gate-source capacitance of the device is reduced, the switching speed of the device is improved, the switching loss of the device is reduced, the body diode conduction loss of the device can be reduced, and the reverse recovery speed of the device is improved.

The utility model provides a drive circuit and a power level circuit, the drive circuit comprises a half-bridge circuit comprising an upper pull tube and a lower pull tube which are connected in series, and the lower pull tube is connected with a grid electrode and a source electrode of a high side power tube / a low side power tube; the detection circuit is used for detecting the voltage change rate at the joint of the high-side power tube and the low-side power tube; and the clamping circuit is used for controlling the grid electrode of the pull-down tube to be connected with the connection node of the pull-up tube and the pull-down tube when the voltage change rate is greater than a preset threshold value. According to the driving circuit provided by the utility model, when the voltage change rate of a connection node is greater than a preset threshold value, the pull-down tube is driven to be equivalent to a diode, so that the potential of the gate source parasitic capacitor of the high / low side power tube is clamped at the conduction voltage drop of the equivalent diode; therefore, the current of the gate-drain stray capacitor of the high / low side power tube flows through the pull-down tube and does not charge the gate-source capacitor of the high / low side power tube, thereby avoiding the direct connection between the high side power tube and the low side power tube.

The invention discloses a preparation method of a shield gate groove type power device, a semiconductor structure used for the shield gate groove type power device and the shield gate groove type power device. The method comprises the steps that a semiconductor substrate is provided, a groove is formed in the semiconductor substrate, and first oxide layers are formed on the surface of the substrate and the side wall of the groove; filling polycrystalline silicon in the groove, wherein the surface of the polycrystalline silicon is lower than the upper surface of the first oxide layer on the surface of the substrate; forming a side wall on the side wall of the groove above the polycrystalline silicon; etching the polycrystalline silicon in the groove to a first depth by taking the side wall as a hard mask; etching the first oxide layer on the side wall of the groove to a second depth, wherein the second depth is smaller than the first depth; removing the side wall, executing thermal oxidation, and forming an oxide layer on the exposed part in the groove; and filling polycrystalline silicon in the first depth part and the second depth part of the groove. According to the scheme provided by the invention, the gate-source capacitance can be reduced, so that the starting speed of the device is improved.

The application relates to a power device and a preparation method thereof and electronic equipment. The device comprises a substrate, a first surface of the substrate comprising an epitaxial layer; the epitaxial layer comprising source regions, base regions and shielding regions arranged along a first direction towards the substrate via a top surface; a plurality of gates spaced along a second direction parallel to the first surface and penetrating the source regions and the base regions along the first direction and partially embedded in the shielding regions; the gate comprising a gate conductive layer and a gate oxide layer arranged along the first direction; an interlayer dielectric layer located on the top surface of the epitaxial layer and comprising an extension penetrating the gate conductive layer along the first direction and in contact with the gate oxide layer; and a metal layer located on the top surface of the interlayer dielectric layer and comprising a first source electrode extending into the gate via the top surface of the extension; the width and depth of the first source electrode being related to the gate-source capacitance of the power device. The channel density can be ensured while improving the reliability of the gate oxide layer.

The invention provides a silicon carbide power switch driving circuit, and relates to the technical field of power electronic driving, the silicon carbide power switch driving circuit comprises a pulse generation module, an isolation transformer and a driving output module, the pulse generation module converts an input direct current voltage into an alternating pulse voltage with dead time and outputs the alternating pulse voltage to a primary winding of the isolation transformer; the driving output module comprises a charging loop, an active discharge loop and a discharge resistor assembly, the active discharge loop comprises a normally-on switch tube, the control end of the normally-on switch tube is connected with one winding section of the secondary winding, and a discharge path bypassing the secondary winding is provided for the gate-source capacitor in the dead zone time. The discharge resistor assembly comprises a first discharge resistor and a second discharge resistor which are arranged in series and located outside and inside the active discharge loop respectively. The discharge falling edge is effectively accelerated, the contradiction of mutual restriction of the discharge speed and oscillation suppression is solved, the structure is simple, and the cost is low.

The invention belongs to the technical field of semiconductors, and discloses a trench MOSFET device for improving switching loss, which comprises an epitaxial layer formed above a substrate; the trench gate structures are arranged at intervals and are formed above the epitaxial layer region; the first well region is formed between the trench gate structures which are arranged at intervals; the second well region is formed above the first well region and has a second conduction type; the third well region is formed above the first well region, is positioned on two sides of the second well region, and is respectively in contact with the vertical wall surfaces of the trench gate structure; the trench gate structure comprises a gate and a gate oxide layer wrapping the outer wall surface of the gate, groove sections arranged at intervals are distributed in the longitudinal straight line section, perpendicular to the wall surface, of the gate oxide layer in the longitudinal direction, and the groove sections are concaved outwards in the transverse direction from the gate. According to the invention, the gate-source capacitance and the gate-drain capacitance of the whole assembly can be improved only by optimizing the trench gate structure design, and the production cost is greatly reduced.

The embodiment of the present disclosure provides a kind of measurement method and device for the background carrier concentration of high electron mobility transistor, belong to semiconductor technical field.The measurement method includes: obtaining unit area reference capacitance and the first measured gate-source capacitance of HEMT, unit area reference capacitance is the capacitance of unit area laminated structure, and the film layer stack structure of laminated structure is identical with the film layer stack structure of HEMT;According to unit area reference capacitance and the first measured gate-source capacitance, determine the equivalent gate-source capacitance area of HEMT;According to the first measured gate-source capacitance and equivalent gate-source capacitance area, determine the unit area calibration capacitance of HEMT;According to unit area calibration capacitance and the channel depth of HEMT, determine the background carrier concentration of HEMT.The embodiment of the present disclosure can effectively improve the accuracy of the background carrier concentration of HEMT measured.

The invention relates to a power device and a preparation method thereof, and electronic equipment, and the device comprises the components of a substrate which comprises an epitaxial layer on a first surface; the epitaxial layer internally comprises a source region, a base region and a shielding region which are arranged along a first direction towards the substrate through the top surface; the grid electrodes are distributed at intervals along a second direction parallel to the first surface, penetrate through the source region and the base region along the first direction, and are partially embedded into the shielding region; the gate electrode comprises a gate conductive layer and a gate oxide layer which are arranged along a first direction; the interlayer dielectric layer is located on the top surface of the epitaxial layer and comprises an extension part which penetrates through the gate conductive layer in the first direction and is in contact with the gate oxide layer; the metal layer is positioned on the top surface of the interlayer dielectric layer and comprises a first source electrode which extends into the grid electrode through the top surface of the extension part; the width and depth of the first source are associated with the gate-source capacitance of the power device. The reliability of the gate oxide layer can be improved while the channel density is ensured.

During formation of a nanostructure field-effect transistor (NSFET) device, a dielectric wall is used to cut the replacement gate structure into separate replacement gate structures. The dielectric wall may be formed by replacing a portion of the replacement gate structure disposed between two adjacent fins / channel stacks / stacked nanostructures with one or more dielectric materials. The dielectric wall reduces the size of the replacement gate structure, thereby reducing the gate-source capacitance (e.g., a parasitic capacitance), which in turn reduces the RC delay and the power consumption of the device formed. Due to the self-aligned manner of formation for the dielectric wall, the distance between adjacent fins / channel stacks / stacked nanostructures can be scaled down further to achieve higher level of integration.

The application provides a silicon carbide VDMOS with high anti-drain voltage impact and a preparation method. A first drift region is epitaxially grown on a silicon carbide substrate with a drain metal layer; a current uniform layer, a second drift region and a drift layer including the first drift region and the second drift region are formed; a barrier layer is formed, etching, ion implantation, a plurality of uniformly spaced mask layers, a P-type well region, an N-type source region, an N-type region, the barrier layer is reformed, etching, oxidation to form an insulating medium layer; metal deposition, gate metal layer formation, barrier layer reforming, etching, metal deposition, source metal layer formation; the barrier layer is removed, and the preparation is completed; the reliability of the device to the drain voltage impact is improved, the gate-source capacitance of the device is reduced, the switching speed of the device is improved, the switching loss of the device is reduced, the body diode conduction loss of the device is reduced, and the reverse recovery speed of the device is improved.

The invention discloses a super junction device, which is characterized in that a super junction structure is at least formed in an active region, device unit structures are formed in the active region, each device unit structure comprises a gate unit structure, and each gate unit structure forms a two-dimensional mesh gate structure. The two-dimensional mesh gate structure comprises a plurality of first gate strips which extend in a first direction and are arranged in parallel, and a first gate spacer region is arranged between every two adjacent first gate strips. A plurality of second gate segments and grid regions located between the second gate segments are formed in each first gate spacer region, and a forming region of each device unit structure comprises a corresponding grid region; and each second grid section is also connected with the first grid strips on the two sides, and grid connection nodes are formed at the connection positions. According to the invention, the gate parasitic capacitance such as the gate source capacitance and the gate drain capacitance can be improved, and the synchronization level of each device unit structure, namely the primitive cell, can be improved at the same time, so that the voltage and current overshoot can be inhibited, and the EMI can be reduced.

The invention discloses an electronic device, a working method, a power amplifier and communication equipment, relates to the technical field of communication, and is used for improving efficiency and linearity. The electronic device comprises a first HEMT device, a second HEMT device, a first grid electrode, a second grid electrode, a source electrode and a drain electrode, the first grid electrode is connected with the grid electrode of the first HEMT device and the source electrode of the second HEMT device, the source electrode of the electronic device is connected with the source electrode of the first HEMT device, the drain electrode of the electronic device is connected with the drain electrode of the first HEMT device, and the second grid electrode is connected with the grid electrode of the second HEMT device. The drain of the second HEMT device is electrically floating, and the gate-source capacitance of the first HEMT device can be compensated through the source-gate capacitance of the second HEMT device, so that the sum of the capacitance values of the source-gate capacitance of the second HEMT device and the gate-source capacitance of the first HEMT device is kept unchanged along with the change of the voltage of the first gate, and the efficiency and the linearity are improved.

The present invention provides a method for preparing a device structure of an SGT MOS tube, the method comprising: sequentially forming a first thermal oxide layer, an isolation layer, and a trench oxide layer on the surface of an epitaxial layer and on the sidewalls of a first groove of the epitaxial layer; thinning the thickness of the first thermal oxide layer while meeting the thickness requirements of the trench sidewall oxide layer to reduce consumption of the epitaxial layer, thereby improving the voltage resistance of the SGT tube; depositing a first polysilicon layer in a groove formed by the trench oxide layer, and removing a portion of the trench oxide layer in the first groove; because the isolation layer is provided, an inter-gate oxide layer on the surface of the protruding portion of the first polysilicon layer can be formed to the required thickness, thereby reducing the gate-source capacitance of the SGT tube; depositing a second polysilicon layer and performing a first ion implantation and a second ion implantation on the epitaxial layer on both sides of the first groove; depositing an interlayer dielectric layer on the substrate to complete the preparation of the device structure.

The invention provides a shield gate MOSFET and a forming method thereof, and the method comprises the steps: providing an epitaxial layer, and forming a shield gate trench in the epitaxial layer; forming an ONO layer on the inner wall of the shield gate trench, wherein the ONO layer comprises a first oxide layer, a nitride layer and a second oxide layer which are sequentially stacked from the inner wall of the shield gate polysilicon; forming shield gate polycrystalline silicon at the lower part of the shield gate groove, wherein the shield gate polycrystalline silicon is separated from the inner wall of the shield gate groove through an ONO layer; forming a dielectric layer on the surface of the shield gate polycrystalline silicon, wherein the dielectric layer fills the upper part of the shield gate groove; removing a part of the nitride layer on the shield gate trench to form second trenches on the two sides of the dielectric layer; and forming second gate polycrystalline silicon in the second groove. According to the invention, the relative area of the isolation layer between the second gate polycrystalline silicon and the shield gate polycrystalline silicon is reduced, so that the gate source capacitance is reduced, and the switching speed is improved.

A process that exhibits: Discharging a gate-source capacitance (C GS ) of a transistor device (1) from a first voltage level (V1) to a second voltage level (V2) when a first resistor (21) is connected in parallel to the gate-source capacitance (C GS ) is switched on, and measuring a first discharge time (T1) in connection with the discharge; Discharge of the gate-source capacitance (C GS ) from the first voltage level (V1) to the second voltage level (V2) when the first resistor (21) and a second resistor (22) are connected in parallel to the gate-source capacitance (C GS ) are switched on, and measuring a second discharge time (T2) in connection with the discharge; Comparing the ratio between the first discharge time (T1) and the second discharge time (T2) with a predefined threshold; and Detecting a fault based on comparison.

This invention discloses a method for establishing and extracting a charge model for HEMT transistors based on GaN technology, comprising: obtaining the gate-channel voltage based on externally input gate voltage, drain potential, and source potential; obtaining the gate charge based on gate charge density, number of gate elements, gate length, and width of a single gate element; obtaining the drain-source potential difference based on the drain potential and source potential; establishing a charge model based on the gate-channel voltage, gate charge, and drain-source potential difference to characterize the correlation between charge value and drain-source voltage after the transistor device is turned on; and differentiating the charge value of the charge model to establish a capacitance model to characterize the correlation between gate-source capacitance, gate-source voltage, and drain-source voltage. This invention supports the charge / capacitance description of HEMT transistors based on GaN technology, especially the description of the relationship between gate-source capacitance, gate-source voltage, and drain-source voltage after the channel is turned on, with high model accuracy.

The application discloses a kind of high drive IO power supply burr processing circuits, by setting multiple IO modules and ESD protection modules on chip base guide, IO module includes first delay drive circuit and second delay drive circuit, level conversion unit receives the digital square wave signal input by digital signal input end, respectively obtains DRP signal and DRN signal by DRP signal processing unit and DRN signal processing unit processing, DRP signal and DRN signal drive multiple MOS in each group of effective delay circuit in turn and obtain square wave signal, digital signal output unit is processed to the square wave signal of surge protection unit and is output to first delay drive circuit, utilize the gate-source capacitance of drive pipe and resistance and form multiple groups of effective delay circuit, ensure that effective delay is formed between each group of effective delay circuit, solve the influence of through current to power supply from IO module inside, solve IO to power supply in combination with chip layout processing, enhance power anti-interference performance.

The invention provides a small signal model of an InP-based HEMT (High Electron Mobility Transistor) device and a parameter extraction method of the small signal model. The model comprises a stray capacitor between gate and drain bonding pads, a stray capacitor between gate and source bonding pads, a stray capacitor between drain and source bonding pads, a gate stray resistor, a gate stray inductor, a drain stray resistor, a drain stray inductor, a capacitor between gate and drain electrodes, a capacitor between gate and source electrodes and a capacitor between drain and source electrodes. An intrinsic gate-source capacitor, an intrinsic gate-drain capacitor, an intrinsic drain-source capacitor, an inter-gate-drain leakage resistor, an inter-gate-source leakage resistor, an output resistor, an intrinsic channel resistor, an intrinsic transconductance and a delay factor are included. Aiming at the working frequency of a device in a millimeter wave band, an improved small signal model is established, distributed model establishment is carried out on parasitic capacitance between bonding pads and parasitic capacitance between tube cores, four auxiliary structures are combined, parameter extraction of parasitic elements such as the parasitic capacitance between the bonding pads and the parasitic capacitance between the tube cores is respectively carried out, and the reliability of the device is improved. Therefore, the precision of the millimeter wave band small signal model is improved.

The utility model discloses a SiC field effect transistor capable of reducing switching loss, and relates to the technical field of semiconductors. In the planar gate SiC MOSFET device, one component of a gate-source capacitor Cgs is composed of a gate electrode, an isolation dielectric layer and a source electrode, and the size of the Cgs depends on the thickness of the isolation dielectric layer and the coupling area of the gate electrode and the source electrode. According to the utility model, the unique isolation dielectric layer layout is adopted, and the coupling area of the gate electrode and the source electrode in the SiC MOSFET device is greatly reduced, so that the gate-source capacitance Cgs is reduced, the switching characteristic of the device is improved, and the switching loss is reduced.

The invention discloses a display panel and a display device.The display panel comprises a data line, a scanning line, a shared electrode line, a main pixel electrode, a secondary pixel electrode, a first transistor, a second transistor and a third transistor, and a first active part of the first transistor and a second active part of the second transistor are arranged on the same layer and connected into an integrated structure; the overlapping area between the source and drain electrodes of the first transistor and the second transistor and the scanning line can be reduced, so that the difference between the gate-source capacitance of the first transistor and the gate-source capacitance of the third transistor can be reduced, and the difference between the charge transmission efficiency of the first transistor and the charge transmission efficiency of the third transistor is reduced; therefore, the brightness uniformity of the display panel can be improved.

The invention discloses a shield gate trench type power device and a preparation method thereof. The preparation method comprises the following steps: depositing thick oxide layers with consistent thickness on the inner sides of a first trench and a second trench and the upper surface of a first conductive type epitaxial layer; filling shield gate polycrystalline silicon and a first hard mask layer in the first groove and the second groove, and removing the thick oxide layer by taking the first hard mask layer as a mask; removing the first hard mask layer, and depositing inter-gate oxide and silicon nitride which are consistent in thickness; filling mask polycrystalline silicon and a second hard mask layer in the first groove and the second groove, and removing the inter-gate oxide in the inner side areas of the adjacent first groove and second groove by taking the second hard mask layer as a mask; sequentially removing the second hard mask layer, the mask polycrystalline silicon and the silicon nitride; and depositing a gate oxidation medium with consistent thickness. The thickness of the inter-gate oxide layer dielectric can be ensured to be uniform and consistent, so that the gate source capacitance of the cell in the active region is improved, and the stability of the device performance is ensured.

The present invention relates to the technical field of semiconductors, and more specifically, relates to a shielded-gate trench power device and a preparation method therefor. The method comprises: preparing a semiconductor wafer to be processed; depositing gate polysilicon on the upper surface of an epitaxial layer and a trench structure of the semiconductor wafer, such that a recess is formed above the trench structure; etching the gate polysilicon in the recess until an oxide layer above source polysilicon is reached, so as to form two sub-gates, wherein an inter-gate trench is formed between the two sub-gates; planarizing the gate polysilicon until the oxide layer on the surface of the epitaxial layer is exposed; forming an oxide-film dielectric layer, which covers the oxide layer covering the upper surface of the epitaxial layer, and the gate polysilicon; and planarizing the oxide-film dielectric layer, so as to obtain a flat surface of the oxide-film dielectric layer. The shielded-gate trench power device and the preparation method therefor provided by the present invention enable the adjustment of the gate-source overlap area, thereby reducing the gate-source capacitance, and increasing the degree of freedom in device preparation.

Semiconductor arrangement which features: a first FET (102) which is integrated within the semiconductor arrangement (200) and which has gate, source and drain terminals; a low-voltage switching device (118) that is integrated within the semiconductor arrangement (200) and that is configured to electrically short-circuit a gate-source capacitance of the first FET (102) in response to a control signal (DRV2); a semiconductor package (106) comprising an electrically conductive conductor frame (120) having gate, source, and drain leads, wherein the gate, source, and drain leads of the first FET (102) are each electrically connected to the gate, source, and drain leads of the conductor frame (120); and an inverter integrated in the semiconductor package (106) and having an input and output terminal, wherein the input terminal of the inverter is electrically connected to the gate terminal of the conductor frame (120), and wherein the output terminal of the inverter is electrically connected to the gate terminal of the low-voltage switching device (118).

The invention discloses a bridge arm crosstalk suppression circuit for reducing reverse conduction loss of a GaN device, and belongs to the technical field of power electronics and electricians. According to the circuit, a negative voltage circuit capable of inhibiting forward crosstalk is connected in series in a driving circuit, an auxiliary MOS tube is connected in series in a reverse direction on the driving positive voltage circuit, and the negative voltage circuit is isolated from the driving circuit by controlling the auxiliary MOS tube to be switched on in dead time, so that the reverse conduction loss is reduced. When forward crosstalk is generated, the auxiliary MOS tube is controlled to be switched off, the negative voltage circuit is connected to the driving circuit, negative voltage is provided for a gate source capacitor of the GaN device, meanwhile, a low-impedance loop is provided for forward crosstalk current, and forward bridge arm crosstalk is restrained. When negative crosstalk is generated, a low-impedance loop is provided for negative crosstalk current, and negative bridge arm crosstalk is suppressed. The reverse conduction loss of the GaN device can be reduced while positive and negative crosstalk is suppressed, and the method is suitable for all bridge arm type circuit topologies.

Provides an easily adjustable protection circuit. [Solution] The protection circuit 10 according to the first aspect includes a switch F1 which is an FET connected between the battery BTT and the load 30, and the protection circuit 10 turns off (shuts off) the switch F1 when an overvoltage is applied from the battery BTT, and comprises a voltage detection unit 11 for detecting the overvoltage, a resistor R5 which is the gate-source resistance of the switch F1, a capacitor C1 which is the gate-source capacitor of the switch F1, and a diode D1 connected between the gate of the switch F1 and ground.

The invention discloses a GaN HEMT (High Electron Mobility Transistor) device distributed equivalent circuit, which is provided with a gate end, a drain end and a source end, and a distributed gate-source capacitor and a distributed first intrinsic resistor are arranged between the gate end and the source end. A distributed gate-drain capacitor and a distributed second intrinsic resistor are arranged between the gate end and the drain end, the drain end and the source end are provided with a current source, a first capacitor and a first resistor, the gate end is provided with a distributed gate inductor and a distributed gate resistor, the drain end is provided with a second resistor and a first inductor, and the first resistor is provided with a second resistor and a second resistor. The source terminal is provided with a third resistor and a second inductor. According to the embodiment of the invention, the distributed effect in the GaN HEMT device can be represented under the high-frequency working condition, so that the parameters of the model are more accurate. The GaN HEMT device distributed equivalent circuit can be widely applied to the technical field of semiconductor device modeling.

The present invention discloses a distributed equivalent circuit for a GaN HEMT device. The circuit comprises a gate terminal, a drain terminal, and a source terminal. A distributed gate-source capacitor and a distributed first intrinsic resistor are provided between the gate terminal and the source terminal. A distributed gate-drain capacitor and a distributed second intrinsic resistor are provided between the gate terminal and the drain terminal. A current source, a first capacitor, and a first resistor are provided between the drain terminal and the source terminal. A distributed gate inductor and a distributed gate resistor are provided at the gate terminal. A second resistor and a first inductor are provided at the drain terminal. A third resistor and a second inductor are provided at the source terminal. Embodiments of the present invention can characterize the distributed effects within a GaN HEMT device under high-frequency operating conditions, thereby making the model parameters more accurate. As a distributed equivalent circuit for a GaN HEMT device, the present invention can be widely applied in the field of semiconductor device modeling technology.