89 results about "Gate source capacitance" patented technology

A trench MOSFET in parallel with trench junction barrier Schottky rectifier with trench contact structures is formed in single chip. The present invention solves the drawback brought by some prior arts, for example, the large area occupied by planar contact structure and high gate-source capacitance. As the electronic devices become more miniaturized, the trench contact structures of this invention are able to be shrunk to achieve low specific on-resistance of Trench MOSFET, and low Vf and reverse leakage current of the Schottky Rectifier.

A source-drain buried graphene transistor device on a diamond-like carbon substrate and a manufacture method are applicable to radio frequency communication. The manufacture method includes: firstly, depositing a layer of diamond-like carbon amorphous carbon smooth in surface and stable in chemical property on the substrate by the aid of a magnetic filtered cathode vacuum arc system; secondly, etching a source trench and a drain trench on the diamond-like carbon amorphous carbon insulating layer and filling electrode metal into the trenches; thirdly, planarizing and cleaning the surface of the substrate prior to transferring graphene grown by a chemical vapor deposition method to the cleaned substrate; fourthly, growing gate insulating dielectric by an atomic layer deposition method and sputtering gate electrode metal; and finally, forming a metal gate by means of reactive ion etching and depositing low-K insulating dielectric to protect the device. Carrier mobility of a graphene transistor is high, and the source-drain buried structure is capable of decreasing the graphene length of a region uncovered by the gate, so that gate-source capacitance, gate-drain capacitance and channel resistance are reduced, and high-frequency performance and efficiency of the graphene transistor are improved. The source-drain buried graphene transistor device can be widely applied to small-sized high-frequency graphene integrated circuits.

In one aspect of the present invention, a light sensor is provided in the active pixel sensor cell for sensing incident radiation. The voltage corresponding to the photon-generated or other radiation-generated charge in the active pixel sensor cell is stored on a storage node via a sample-and-hold capacitor. Additional elements, such as source-follower transistors, may reside between the sensing element and the sample-and-hold capacitor. The signal is read via a readout source-follower (RSF) transistor. The readout source-follower drain is connected to the row select switch while its drain is connected to the output node on the column output bus. This configuration couples the storage node to the gate-source capacitance of the readout source-follower transistor. This allows the voltage on the storage node to increase proportionally to the increase in voltage on the readout node when the row select is closed and thus enables the drain current to flow through the RSF to the column output bus.

The present invention relates to an output driving circuit and a transistor output circuit. In accordance with an embodiment of the present invention, an output driving circuit including: a first driving circuit unit driven according to on operation of a first switch to supply high voltage power source to a gate of an output transistor; a second driving circuit unit driven by a one-shot pulse generated according to on operation of a second switch, which operates complementarily with the first switch, to discharge a gate-source capacitance of the output transistor; and an output driving voltage clamping unit disposed between a high voltage power source terminal and the gate of the output transistor in parallel with the first driving circuit unit to maintain a gate potential of the output transistor discharged according to the on operation of the second switch is provided.

The invention relates to a low-color-error liquid crystal array substrate and a corresponding drive method. The low-color-error liquid crystal array substrate comprises a plurality of pixel structures, each pixel structure comprises a primary pixel area and a secondary pixel area, a gate line is arranged between each primary pixel area and the corresponding secondary pixel area and is provided with a first thin film transistor and a second thin film transistor which are connected to the primary pixel area and the secondary pixel area respectively, the position between each gate line and the corresponding secondary pixel area further comprises a public electrode wire and a metal component, each public electrode wire is provided with a standoff capacitor, and each metal component is provided with a share thin film transistor connected with the corresponding standoff capacitor and electrically connected with a data line through a through hole. Through the design of omitting a sub gate line, switches of the share thin film transistors are switched on directly through signal voltage of the data lines; the inconformity of voltage between each primary pixel area and the corresponding secondary pixel area is solved by adjusting the gate source capacitance of the thin film transistor in the primary pixel area, the aperture opening ratio is improved, and the processing cost is lowered.

A switching circuit is electrically coupled between a connection terminal and an output terminal of a transmission channel and includes first and second switching transistors electrically coupled in series to each other and having respective body diodes in anti-series, between the connection terminal and the output terminal. The switching circuit comprises a bootstrap circuit connected to respective first and second control terminals of these first and one second switching transistors, as well as to respective first and second voltage references. The bootstrap circuit includes a first parasitic capacitance electrically coupled between the first control terminal and a first bootstrap node, and a second parasitic capacitance electrically coupled between the second control terminal and a second bootstrap node. The parasitic capacitances have value of at least one order of magnitude lower with respect to the gate-source capacitances of the first and second switching transistors.

The invention discloses a semiconductor device and a preparation method thereof. The semiconductor device comprises a substrate, a semiconductor layer, a source, a drain, a grid, a source field plate and a high dielectric constant dielectric layer, wherein the semiconductor layer is located on the substrate; the source and the drain are located on the semiconductor layer; the grid on the semiconductor layer is arranged between the source and the drain; the source field plate is electrically connected with the source; the high dielectric constant dielectric layer is located between the grid and the source field plate; and the dielectric constant of the high dielectric constant dielectric layer is greater than 3.9. The semiconductor device disclosed by the invention has relatively high gate-source capacitance, so that node capacitance of the semiconductor device and a structure cascaded with the semiconductor device can be matched with each other.

The invention provides a semiconductor device and a manufacturing method therefor. The device comprises a substrate, a semiconductor layer positioned on the substrate, a source electrode and a drain electrode positioned on the semiconductor layer, and a grid electrode positioned between the source electrode and the drain electrode, and a source field plate positioned on the semiconductor layer, wherein a groove is formed in the semiconductor layer between the grid electrode and the drain electrode; and the source field plate comprises a beginning part electrically connected with the source electrode, a first middle part, a second middle part covering the semiconductor layer between the grid electrode and the drain electrode, and a tail part, wherein air exists between the first middle part and the semiconductor layer, and between the tail part and the semiconductor layer. According to the semiconductor device, the overlay deviation between the groove and the source field plate can be eliminated, so that the production cost can be saved, and parasitic gate source capacitance and parasitic resistance are reduced as well.

The invention relates to an array substrate and a manufacturing method thereof and a display device. The array substrate comprises a substrate, common electrodes, multiple rows of grid lines and multiple pixel electrodes, wherein the common electrodes, the multiple rows of grid lines and the multiple pixel electrodes are formed on the substrate; the pixel electrodes and the common electrodes are arranged at different layers; a vertical overlap part exists in each pixel electrode and the corresponding common electrode; and in two pixel electrodes connected to the same row of grid lines, the area of the vertical overlap part of the pixel electrode which is further to the first ends of the grid lines and the corresponding common electrode is smaller than that of the pixel electrode which is nearer the first ends of the grid lines and the corresponding common electrode. According to the array substrate, the leaping voltage of the pixel electrode further to the first ends of the grid lines obtains more compensation than that nearer the first ends of the grid lines, so that the difference between the leaping voltages of two pixel electrodes is reduced; the residual image is reduced. Furthermore, compared with the mode of increasing a gate-source capacitance in the prior art, the array substrate has the advantage that the power consumption of the array substrate can be reduced.

The invention discloses a silicon carbide Trench MOS device and a manufacturing method thereof, and belongs to the technical field of power semiconductors. The method includes: a layer of a polysilicon region distributed in a pi shape is additionally arranged under a trench gate structure of a conventional device, the polysilicon region and an epitaxial layer form a Si/SiC heterojunction, and a diode is integrated in the device. Compared with a parasitic silicon carbide diode which directly employs a silicon carbide Trench MOS, according to the silicon carbide Trench MOS device and the manufacturing method thereof, the junction voltage drop of the device diode during application is substantially reduced, and the switch-on characteristic of the device is improved through large junction area of the heterojunction; moreover, the gate-drain capacitance and the ratio of the gate-drain capacitance to the gate-source capacitance of the device are reduced, and the performance and the reliability of the device MOS during application are enhanced; besides, the silicon carbide Trench MOS device and the manufacturing method thereof are also advantageous in that the reverse recovery time is short, the reverse recovery charges are less, and advantages including low reverse leakage, high breakdown voltage, and good temperature stabilization performance of the conventional silicon carbide Trench MOS device are maintained. In conclusion, according to the silicon carbide Trench MOS device and the manufacturing method thereof, the prospect is wide in circuits such as inversion circuits and chopper circuits etc.

The invention provides an establishing method for a non-sectioned GaN HEMT model. The establishing method includes the steps that a voltage control current source I<DS>, gate-drain capacitance C<GD>, gate source capacitance C<GS> and drain-source capacitance C<DS> are obtained; the static characteristics of the non-sectioned GaN HEMT model are obtained according to the I<DS>, and a non-sectioned static-characteristic model is established according to the static characteristics; the dynamic characteristics of the non-sectioned GaN HEMT model are obtained according to the C<GD>, the C<GS> and the C<DS>, and a non-sectioned dynamic-characteristic model is established according to the dynamic characteristics; the non-sectioned GaN HEMT model is obtained according to the non-sectioned static-characteristic model and the non-sectioned dynamic-characteristic model. By means of the establishing method, the non-sectioned GaN HEMT model with the good convergence performance and the high accuracy can be obtained, and is further better applied to power electronic circuit simulation, and meanwhile designing and analysis of a following power converter are more convenient and efficient.

The invention provides a semiconductor device and a fabrication method thereof, and relates to the technical field of semiconductors. By introducing a second dielectric layer with a higher dielectricconstant between two pole plates forming a gate-source capacitor, the gate-source capacitance of the semiconductor device is improved, the problem that a drain-source capacitor of the semiconductor device is mismatched with drain-source capacitors of other semiconductor devices cascaded with the semiconductor device is solved, an external capacitor is not needed to be connected in parallel betweena source and a drain of the semiconductor device, the complexity of the circuit and the volume of the semiconductor device can be reduced, and the reliability of the semiconductor can be improved; and by introducing the high-dielectric constant material between the two pole plates forming the gate-source capacitor, the electrostatic resistant capability of the device can be improved.

The invention discloses a method for estimating relative position of a radiation displacement damage area of a COMS (Complementary Metal Oxide Semiconductor) device in a channel. In the method, the groove of the CMOS device is partitioned into two parts; a part close to a source end is an area I; and a part to a drain end is an area II. When the situation after radiation is compared with the situation before radiation, the radiation displacement damage area is in the area I if the gate source capacitance is decreased while the gate drain capacitance is increased; and the radiation displacement damage area is in the area II if the gate source capacitance is increased while the gate drain capacitance is decreased. Specific to the CMOS device, relative position of the radiation displacement damage area in the groove is represented according to the change of intrinsic capacitance before and after radiation. The method is simple, is easy to operate, and plays a great role in researching single particles, modeling single particles and reinforcing integrated circuits; and a thought for determining the position of the radiation displacement damage area on the CMOS device is provided.

The invention provides a LDMOS (Lateral Diffusion MOS) structure. The LDMOS structure comprises a semiconductor substrate, a first drift area and a second drift area which are located in the semiconductor substrate and are arranged separately, a source which is located in the first drift area, a drain which is located in the second drift area, a gate structure which is located on the semiconductorsubstrate and whose two sides are contacted with the first drift area and the second drift area respectively, a first isolation structure which is located in the first drift area and isolates the source and the gate structure, and a second isolation structure which is located in the second drift area and isolates the drain and the gate structure, wherein both the first isolation structure and thesecond isolation structure are provided with floating field plates. One or more floating field plates is arranged on the isolation structures between the source-gate and the drain-gate, the area of adepleted area can be increased, collision ionization can be reduced, higher breakdown voltage and saturation leakage current Idsat can thus be acquired, and the gate-drain capacitance Cgd and the gate-source capacitance Cgs of the device are not deteriorated.

The invention provides a trench insulated gate bipolar transistor device and a generating method thereof. A relatively thick gate oxide film is formed at the bottom of a trench region through a plasmafilm forming process. Due to the fact that the thickness of the gate oxide film at the bottom of a trench is increased, the consistency of the gate oxide thickness is guaranteed, the defect that a gate oxide layer at the bottom of the trench is easy to break down is eliminated, and the robustness of a gate oxide breakdown voltage is improved. Meanwhile, the area of a gate-drain capacitor is reduced, so that the Miller capacitance is reduced, the switch delay time is shortened, the switch dynamic loss of a device is reduced, and the switch characteristic of the device is improved. Meanwhile, the relatively thick gate oxide film is formed at the bottom of the trench, so that the upper surface of polycrystalline silicon subjected to back etching can be leveled and is slightly higher than thesurface of a silicon wafer of a N-type base region; and higher N+ emitter junction depth can be formed without increasing the injection energy of an N+ emitter and carrying out longer-time high-temperature trap pushing, so that the vertical overlapping area of the gate and the source is reduced, the gate-source capacitance is reduced, and the switch loss of an IGBT is reduced.

A discharge-lamp lighting apparatus includes series circuits connected to each end of a DC power source, a transformer, FETs Qp1, Qn1, Qp2, and Qn2, and a drive circuit. The drive circuit includes transistors Q1 and Q3 to discharge gate-source capacitances of the Qp1 and Qp2, resistance elements to determine gate potentials of the transistors Q1 and Q3 when the transistors Q1 and Q3 are turned on, transistors Q2 and Q4 to charge the gate-source capacitances of the Qp1 and Qp2, constant current circuits, and switches connected in series with the series circuits of the constant current circuits and resistance elements, respectively, to turn on/off the constant current circuits.

The invention discloses a planar VDMOS device and a manufacturing method thereof. The method comprises the steps as follows: providing a first conductivity type substrate, and arranging a first conductivity type epitaxial layer on the first conductivity type substrate; generating a gate oxide layer on the first conductivity type epitaxial layer, and generating a polycrystalline silicon layer on the gate oxide layer; generating a first isolation layer on the polycrystalline silicon layer; making a second conductivity type well region and a first conductivity type source region; and generating a dielectric layer, making a contact hole and a metal layer, and generating a second isolation layer on the first generation layer, wherein the first conductivity type and the second conductivity type are opposite. By growing more dense isolation layers between the gate polycrystalline silicon layer and the source metal layer, the spacing between the gate and source plates is increased, and the gate capacitance and source capacitance of the planar VDMOS device are reduced.

The invention discloses a shield grid MOSFET and a manufacturing method thereof. The shield grid MOSFET comprises a drift region of a first conduction type, a trench located in the top of the drift region and body regions of a second conduction type located on the two sides of the trench; a grid electrode and a shield grid are arranged in the trench, the grid electrode is located above the shield grid, and a first doped region of a first conduction type is arranged on one side, close to the grid electrode, of the top of the body region; a source electrode is arranged on the top surface of the first doped region, and the body region is connected with the source electrode; the shield grid is connected with the source grid; and a first oxide layer is arranged between the grid electrode and the first doped region, a grid oxide layer is arranged between the grid electrode and the body region, a second oxide layer is arranged between the shield grid and the inner wall of the trench, a third oxide layer is arranged between the grid electrode and the shield grid, and the thickness of the first oxide layer is greater than that of the grid oxide layer. According to the shield grid MOSFET, the grid drain capacitance is reduced, the grid source capacitance is reduced, and the response speed of the shield gate MOSFET is improved.