Establishing method for non-sectioned GaN HEMT model

Abstract

The invention provides an establishing method for a non-sectioned GaN HEMT model. The establishing method includes the steps that a voltage control current source I<DS>, gate-drain capacitance C<GD>, gate source capacitance C<GS> and drain-source capacitance C<DS> are obtained; the static characteristics of the non-sectioned GaN HEMT model are obtained according to the I<DS>, and a non-sectioned static-characteristic model is established according to the static characteristics; the dynamic characteristics of the non-sectioned GaN HEMT model are obtained according to the C<GD>, the C<GS> and the C<DS>, and a non-sectioned dynamic-characteristic model is established according to the dynamic characteristics; the non-sectioned GaN HEMT model is obtained according to the non-sectioned static-characteristic model and the non-sectioned dynamic-characteristic model. By means of the establishing method, the non-sectioned GaN HEMT model with the good convergence performance and the high accuracy can be obtained, and is further better applied to power electronic circuit simulation, and meanwhile designing and analysis of a following power converter are more convenient and efficient.

Description

technical field [0001] The invention relates to the technical field of power electronics, in particular to a method for establishing a non-segmented GaN HEMT model. Background technique [0002] Due to the limitations of its material properties, silicon-based power electronic devices have gradually been unable to meet the high performance requirements of semiconductor devices in the field of power electronics today. Based on this, wide bandgap semiconductor materials represented by gallium nitride (GaN) came into being. Compared with silicon (Si) devices, GaN has higher bandwidth, breakdown voltage and thermal conductivity. These excellent characteristics make GaN has significant advantages in terms of high frequency and high power density. Gallium Nitride High Electron Mobility Transistor (GaN HEMT, GaN High Electron Mobility Transistor), as the most promising switching device, has been manufactured by EPC, Transphorm, GaN Systems and other manufacturers. During the desig...

AI Technical Summary

Problems solved by technology

In equivalent circuit modeling, one method is a model based on the traditional Si MOSFET structure. The disadvantage of this model is that it does not consider the reverse conduction characteristics of GaN HEMTs.

In addition, the characteristic curve and working principle of GaN HEMT are not exactly the same as those of Si MOSFET. Only by changing the internal parameters of Si MOSFET, there is no way to get an accurate model

Another method is to directly use mathematical equations to define the static channel current. The model established by this method includes forward and reverse conduction characteristics, but the fitting results of parasitic capacitance in related technologies are not ideal

More importantly, the model uses piecewise equations for the definition of static properties, which may cause non-convergence problems when applying the GaN HEMT model to power electronics circuit simulations

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