4 results about "Power electronics circuits" patented technology

The application discloses a control method and system for realizing totem pole PFC high-frequency bridge arm staggered parallel and full-range soft switching, and mainly solves the problem that the prior art cannot simultaneously realize stable staggered parallel of totem pole PFC and active tube soft switching of master and slave phases. The implementation scheme comprises the following steps: collecting input voltage, output voltage, inductance current of master and slave phases and circuit parameters of a bridgeless totem pole PFC parallel circuit; calculating PI voltage loop output power and input voltage polarity signal; calculating active tube conduction time parameter, active tube turn-off time parameter, synchronous tube conduction time parameter and synchronous tube turn-off time parameter for realizing ZVS; calculating compensated slave phase active tube turn-off time parameter and synchronous tube conduction time parameter; and controlling active tube and synchronous tube of master and slave phases of the totem pole PFC based on the time parameters. The application can realize soft switching of all high-frequency active tubes while realizing stable staggered parallel of the totem pole PFC high-frequency bridge arm, and can be used for various high-power power electronic circuits.

The application discloses a control method and system for realizing bridgeless totem-pole PFC full-range ZVS and frequency limitation. The implementation scheme is as follows: input voltage, output voltage and inductor current of the bridgeless totem-pole PFC circuit are collected to obtain input voltage polarity signal and PI voltage loop output power; the additional reverse conduction time of the synchronous tube for realizing ZVS is calculated; the original active tube conduction time of the additional reverse conduction time of the synchronous tube without the synchronous tube and the additional reverse conduction time of the synchronous tube for realizing frequency limitation are calculated; the additional reverse conduction time of the synchronous tube and the active tube conduction time for simultaneously realizing ZVS and frequency limitation are calculated; the dead time is self-defined, and the active tube and the synchronous tube of the bridgeless totem-pole PFC circuit are controlled to act based on the time, the input voltage polarity signal, the additional reverse conduction time of the synchronous tube and the active tube conduction time for simultaneously realizing ZVS and frequency limitation and the inductor current zero-crossing signal. The application can realize high-frequency switch tube full-range ZVS and limit the frequency of the high-frequency tube switch, and can be used in various high-power power electronic circuits.

This application provides a high-voltage, high-current, resettable intelligent electronic fuse protection device and method, specifically relating to the field of power electronic circuit protection technology. The device includes input / output ports, a main power switch module, a current / voltage sampling module, a hardware comparison module, a fast drive module, a control module, and a buffer absorption module. The main power switch module consists of multiple power switch units connected in parallel, carrying and controlling the main power path. The current and voltage sampling modules sample current and voltage respectively and generate signals. The hardware comparison module compares the signals and outputs a fault trigger signal. The fast drive module receives the signal and shuts off the main power path. The control module monitors the device status, integrates a graded protection logic module, and executes recovery logic according to the fault level, achieving automatic recovery from recoverable overloads and sustained shutdown during lockout faults. The buffer absorption module provides overvoltage protection. This device meets the requirements of high-voltage, high-current scenarios, providing multiple hardware-level protections and replacing traditional fuses.

This invention discloses a gallium oxide (GaO) junction device, primarily addressing the limitations of β-Ga2O3-based devices and the lack of substrate-level bulk single crystals in α-Ga2O3-based devices, resulting in poor crystal quality. The device comprises a β-Ga2O3 substrate and an α-Ga2O3 epitaxial structure layer, with an auxiliary transfer layer and a liquid metal-based GaO nucleation layer between them. These layers are used for the transfer and epitaxial growth of α-Ga2O3, respectively, to form an α-Ga2O3-β-Ga2O3 junction structure. GaO diodes and vertical GaO transistors are fabricated on this junction structure according to requirements. This invention combines the ultra-high voltage withstand capability of α-Ga2O3 with the low-cost mass production potential of the β-Ga2O3 substrate, effectively improving the quality of the α-Ga2O3 epitaxial structure layer and providing a new technical path for performance and cost control of GaO-based power devices. It can be used in high-voltage, low-loss power electronic circuits.