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2530results about "Variable inductances" patented technology

Power supply system

A power supply system according to the present invention comprises: a primary side coil; a power transmission apparatus having a primary side circuit for feeding a pulse voltage resulted from switching a DC voltage which is obtained by rectifying and smoothing a commercial power supply to the primary side coil; a secondary side coil magnetically coupled to the primary side coil; and power reception equipment having a secondary side circuit for rectifying and smoothing voltage induced across the secondary side coil, wherein there is provided a power adjusting section for adjusting a level of power to be transmitted according to power required by the power reception equipment. The power adjusting section has, in the primary side circuit, a carrier wave oscillation circuit for supplying a carrier wave to the primary side coil, a demodulation circuit for demodulating a modulated signal transmitted from the secondary circuit and received by the primary side coil, and a power change-over section for selecting a level of power to be transmitted according to an information signal from the power reception equipment and demodulated by the demodulation circuit. The power adjusting section has, in the secondary side circuit, a modulation circuit for modulating the carrier wave fed from the carrier wave oscillation circuit and received by the secondary side coil with the information signal from the power reception equipment and transmitting the modulated signal.
Owner:SHARP KK

Power supply system

A power supply system is provided, having: a primary side coil; a power transmission apparatus having a primary side circuit for feeding a pulse voltage resulted from switching a DC voltage which is obtained by rectifying and smoothing a commercial power supply to the primary side coil; a secondary side coil magnetically coupled to the primary side coil; and power reception equipment having a secondary side circuit for rectifying and smoothing voltage induced across the secondary side coil, wherein there is provided a power adjusting section for adjusting a level of power to be transmitted according to power required by the power reception equipment. The power adjusting section has, in the primary side circuit, a carrier wave oscillation circuit for supplying a carrier wave to the primary side coil, a demodulation circuit for demodulating a modulated signal transmitted from the secondary circuit and received by the primary side coil, and a power change-over section for selecting a level of power to be transmitted according to an information signal from the power reception equipment and demodulated by the demodulation circuit. The power adjusting section has, in the secondary side circuit, a modulation circuit for modulating the carrier wave fed from the carrier wave oscillation circuit and received by the secondary side coil with the information signal from the power reception equipment and transmitting the modulated signal.
Owner:SHARP KK

High pressure high non-reactive diluent gas content high plasma ion density plasma oxide etch process

The invention is embodied in a method of processing a semiconductor workpiece in a plasma reactor chamber, including supplying a polymer and etchant precursor gas containing at least carbon and fluorine into the chamber at a first flow rate sufficient of itself to maintain a gas pressure in the chamber in a low pressure range below about 20 mT, supplying a relatively non-reactive gas into the chamber at second flow rate sufficient about one half or more of the total gas flow rate into the chamber, in combination with the first flow rate of the precursor gas, to maintain the gas pressure in the chamber in a high pressure range above 20 mT, and applying plasma source power into the chamber to form a high ion density plasma having an ion density in excess of 1010 ions per cubic centimeter. In one application of the invention, the workpiece includes an oxygen-containing overlayer to be etched by the process and a non-oxygen-containing underlayer to be protected from etching, the precursor gas dissociating in the plasma into fluorine-containing etchant species which etch the oxygen-containing layer and carbon-containing polymer species which accumulate on the non-oxygen-containing underlayer. Alternatively, the high pressure range may be defined as a pressure at which the skin depth of the inductive field exceeds {fraction (1 / 10)} of the gap between the inductive antenna and the workpiece.
Owner:APPLIED MATERIALS INC

Control method for single-phase grid-connected lcl inverter

A method of controlling the grid-side current of a single-phase grid-connected converter having an LCL filter connected between the output of the converter and the grid. The method includes measuring a grid voltage (vS) and at least one signal in a group of signals consisting of a grid-side current (i0), a converter-side current (i1) and a capacitor voltage (vC0). The method includes estimating the fundamental component (vS,1) of the grid voltage (vS), forming a grid-side current reference (i0*), a converter-side current reference (i1*) and a capacitor voltage reference (vC0*) for the grid-side current of the LCL filter using the fundamental component of the grid voltage (vS,1), forming estimates for the non-measured signals in said group of signals, forming a grid-side current difference term (ĩ0), a converter-side current difference term (ĩ1) and a capacitor voltage difference term ({tilde over (v)}C0) from the differences between the references and measured/estimated values of said signals, forming an injection term for damping the resonance of the LCL filter by using an active damping injection mechanism (ADI), in which the grid-side current difference term (ĩ0), the converter-side current difference term (ĩ1) and the capacitor voltage difference term ({tilde over (v)}C0) are used, forming an estimate of harmonic distortion term ({circumflex over (φ)}) using the grid-side current difference term (ĩ0), and controlling the output voltage (e) of the converter on the basis of the grid voltage, formed injection term and formed estimate of the harmonic distortion term ({circumflex over (φ)}) to produce a grid side (i0) current corresponding to the current reference.
Owner:MARICI HLDG THE NETHERLANDS BV

Magnetizing inrush current suppression device and method for transformer

To suppress the magnetizing inrush current occurring when supplying power of three phases of the transformer are performed simultaneously using three single-phase circuit breakers or a non-phase segregated operation-type circuit breaker, without providing a circuit breaker with a resistor or other equipment. A magnetizing inrush current suppression method for transformer suppresses a magnetizing inrush current occurring at the start of energizing of a three-phase transformer 300, when a three-phase power supply 100 is input to a terminal of each phase by means of a three-phase circuit breaker 200. In the method, by integrating phase voltages or line-to-line voltages on the primary side or the secondary side or the tertiary side when three-phase AC voltages are applied in a steady state to the transformer 300, steady-state magnetic flux 4, 5, 6 for each phase of the transformer is calculated, and the polarity and magnitude of the residual magnetic flux 7, 8, 9 of each phase of the transformer after the circuit breaker 200 shuts off the transformer are calculated, and the three-phase circuit breaker is caused to close simultaneously in a region 13 in which three phases overlap, each of the three phases having the polarity of the steady-state magnetic flux 4, 5, 6 equal to the polarity of the residual magnetic flux 7, 8, 9 for each phase of the transformer.
Owner:KK TOSHIBA
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