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2692 results about "Pressure range" patented technology

Low-temperature compatible wide-pressure-range plasma flow device

The invention is embodied in a plasma flow device or reactor having a housing that contains conductive electrodes with openings to allow gas to flow through or around them, where one or more of the electrodes are powered by an RF source and one or more are grounded, and a substrate or work piece is placed in the gas flow downstream of the electrodes, such that said substrate or work piece is substantially uniformly contacted across a large surface area with the reactive gases emanating therefrom. The invention is also embodied in a plasma flow device or reactor having a housing that contains conductive electrodes with openings to allow gas to flow through or around them, where one or more of the electrodes are powered by an RF source and one or more are grounded, and one of the grounded electrodes contains a means of mixing in other chemical precursors to combine with the plasma stream, and a substrate or work piece placed in the gas flow downstream of the electrodes, such that said substrate or work piece is contacted by the reactive gases emanating therefrom. In one embodiment, the plasma flow device removes organic materials from a substrate or work piece, and is a stripping or cleaning device. In another embodiment, the plasma flow device kills biological microorganisms on a substrate or work piece, and is a sterilization device. In another embodiment, the plasma flow device activates the surface of a substrate or work piece, and is a surface activation device. In another embodiment, the plasma flow device etches materials from a substrate or work piece, and is a plasma etcher. In another embodiment, the plasma flow device deposits thin films onto a substrate or work piece, and is a plasma-enhanced chemical vapor deposition device or reactor.
Owner:RGT UNIV OF CALIFORNIA

Process for PECVD of silicon oxide using TEOS decomposition

A high pressure, high throughput, single wafer, semiconductor processing reactor is disclosed which is capable of thermal CVD, plasma-enhanced CVD, plasma-assisted etchback, plasma self-cleaning, and deposition topography modification by sputtering, either separately or as part of in-situ multiple step processing. The reactor includes cooperating arrays of interdigitated susceptor and wafer support fingers which collectively remove the wafer from a robot transfer blade and position the wafer with variable, controlled, close parallel spacing between the wafer and the chamber gas inlet manifold, then return the wafer to the blade. A combined RF/gas feed-through device protects against process gas leaks and applies RF energy to the gas inlet manifold without internal breakdown or deposition of the gas. The gas inlet manifold is adapted for providing uniform gas flow over the wafer. Temperature-controlled internal and external manifold surfaces suppress condensation, premature reactions and decomposition and deposition on the external surface. The reactor also incorporates a uniform radial pumping gas system which enables uniform reactant gas flow across the wafer and directs purge gas flow downwardly and upwardly toward the periphery of the wafer for sweeping exhaust gases radially away from the wafer to prevent deposition outside the wafer and keep the chamber clean. The reactor provides uniform processing over a wide range of pressures including very high pressures. A low temperature CVD process for forming a highly conformal layer of silicon dioxide is also disclosed. The process uses very high chamber pressure and low temperature, and TEOS and ozone reactants. The low temperature CVD silicon dioxide deposition step is particularly useful for planarizing underlying stepped dielectric layers, either alone or in conjunction with a subsequent isotropic etch. A preferred in-situ multiple-step process for forming a planarized silicon dioxide layer uses (1) high rate silicon dioxide deposition at a low temperature and high pressure followed by (2) the deposition of the conformal silicon dioxide layer also at high pressure and low temperature, followed by (3) a high rate isotropic etch, preferably at low temperature and high pressure in the sane reactor used for the two oxide deposition steps. Various combinations of the steps are disclosed for different applications, as is a preferred reactor self-cleaning step.
Owner:APPLIED MATERIALS INC

High pressure high non-reactive diluent gas content high plasma ion density plasma oxide etch process

The invention is embodied in a method of processing a semiconductor workpiece in a plasma reactor chamber, including supplying a polymer and etchant precursor gas containing at least carbon and fluorine into the chamber at a first flow rate sufficient of itself to maintain a gas pressure in the chamber in a low pressure range below about 20 mT, supplying a relatively non-reactive gas into the chamber at second flow rate sufficient about one half or more of the total gas flow rate into the chamber, in combination with the first flow rate of the precursor gas, to maintain the gas pressure in the chamber in a high pressure range above 20 mT, and applying plasma source power into the chamber to form a high ion density plasma having an ion density in excess of 1010 ions per cubic centimeter. In one application of the invention, the workpiece includes an oxygen-containing overlayer to be etched by the process and a non-oxygen-containing underlayer to be protected from etching, the precursor gas dissociating in the plasma into fluorine-containing etchant species which etch the oxygen-containing layer and carbon-containing polymer species which accumulate on the non-oxygen-containing underlayer. Alternatively, the high pressure range may be defined as a pressure at which the skin depth of the inductive field exceeds {fraction (1 / 10)} of the gap between the inductive antenna and the workpiece.
Owner:APPLIED MATERIALS INC

Gas generating system

A gas generating system (10) including a baffle system (42) for modifying the temperature and pressure of a gas generated by the system, and to remove particulates from the gas. The gas generating system includes a first combustion chamber (34a), a second combustion chamber (36a), and the baffle system (42) adjacent both the first and second combustion chambers so as to enable fluid communication with the combustion chambers upon activation of the gas generating system. In another aspect of the present invention, a baffle system (42) is provided including a first end plate (44) having an opening (44b) formed therein for enabling fluid communication with a first fluid source (34a), a second end plate (46) having an opening (46b) formed therein for enabling fluid communication with a second fluid source (36a), and a sequence of baffle elements (48) extending between the first and second end plates. A first baffle element (48a) of the sequence of baffle elements defines a chamber (60) for receiving therein a fluid through the openings in the first and second end plates. Each additional baffle element in the sequence of baffle elements is spaced outwardly apart from a preceding baffle element in the sequence of baffle elements. In another aspect of the invention, a method is provided for producing, in a gas generating system, a gas having a pressure within a predetermined pressure range and a temperature within a predetermined temperature range. In another aspect of the present invention, a vehicle occupant protection system is provided.
Owner:JOYSON SAFETY SYST ACQUISITION LLC

Full-temperature-range pressure swing adsorption gas separation, refinement and purification method

ActiveCN105749699AReduce energy consumptionBroaden the scope of adsorption separation applicationsSolidificationLiquefactionEnergy gradientPurification methods
The invention discloses a full-temperature-range pressure swing adsorption gas separation, refinement and purification method.By means of the difference of the temperatures and pressures of different raw material gases and the difference of the adsorption separation coefficients and physical chemistry properties of all components in the raw material gases in the temperature range of 80-200 DEG C and the pressure range of 0.03-4.0 MPa, the adsorption or desorption regeneration operation of the pressure swing adsorption circulation process is adjusted by coupling all separation methods, the adsorption theory that the pressure or temperature swing adsorption separation process is only limited to the adsorption and desorption regeneration circulation operation through pressure or temperature changes is expanded, and therefore all raw material gases are separated, refined and purified by achieving the energy gradient utilization in the gas separation, refinement and purification process and achieving the circulation operation, where adsorption, desorption and regeneration are easily matched and balanced, in the moderate to low cold and moderate to high temperature pressure swing adsorption separation process, and it is changed that a traditional adsorption method is only limited to the auxiliary effect of refinement and purification, and adsorption becomes the basic separation unit operation just as important as refinement, absorption and extraction separation.
Owner:SICHUAN TECHAIRS

Body fluid treating filter device

ActiveUS7597806B2Excellent body fluid recovery performanceDialysis systemsCartridge filtersInterior spaceBody fluid
A body fluid treating filter device capable of maintaining its treating pressure within a clinically safe pressure range even if body fluid treatment is performed over a long period and having excellent property for recovering a body fluid after the body fluid treatment is completed. A body fluid treating cylindrical filter layer is stored in a cylindrical container having two body fluid flow ports. The cylindrical filter layer is disposed so that the inner space of a container can be divided into two parts by making its both end parts fluid-tight and fixing at least one of these both end parts to the inner wall surface of the container. One of the inner spaces of the container divided by the cylindrical filter layer is allowed to communicate with the first body fluid flow port and the other of the inner spaces of the container divided by the cylindrical filter layer is allowed to communicate with the second body fluid flow port. The body fluid treating cylindrical filter device is characterized in that a bar-like flow passage resistant member extending along the center axis is installed in the hollow part of the cylindrical filter layer, and a spacer layer for flowing the body fluid of 0.7 to 3.5 mm in thickness is formed between the outer peripheral surface of the cylindrical filter layer and the container and between the inner peripheral surface of the cylindrical filter layer and the flow passage resistance member.
Owner:ASAHI KASEI MEDICAL CO LTD

Pressure regulator for infusor

An improved ambulatory infusion device for dispensing a fluid into a patient includes a flexible bladder enclosure having a first open end a closed second end. The closed second end of the sheath is free to conform to the body of the patient so that the device is comfortable when worn. In other aspects, a pressure regulator of the device is adapted to maintain the outlet pressure within a predetermined range of pressures so that the fluid flow rate is substantially constant during fluid flow. A flow restrictor of the device is formed of flexible tubing.
An ambulatory infusion device for dispensing a fluid at a predetermined fluid flow rate includes an elastic bladder having an interior volume for storing the fluid under pressure and an opening for dispensing the fluid. A pressure regulator is in fluid communication with the opening of the bladder and includes an inlet for receiving fluid from the bladder at an inlet pressure and an outlet for discharging the fluid at a predetermined outlet pressure. A valve at the inlet has a hemispheric-shaped head adapted to cooperate with a frustoconic-shaped seat to promote uniform fluid flow therebetween. A movable diaphragm is connected to the valve, and a valve plate opposite a surface of the diaphragm has channels or texture therein. The diaphragm and the valve are movable in response to the fluid pressure acting on the diaphragm surface.
Owner:BAXTER INT INC

Body fluid treating filter device

ActiveUS20090078636A1Excellent body fluid recovery performanceDialysis systemsFiltration separationInterior spaceBody fluid
A body fluid treating filter device capable of maintaining its treating pressure within a clinically safe pressure range even if body fluid treatment is performed over a long period and having excellent property for recovering a body fluid after the body fluid treatment is completed. A body fluid treating cylindrical filter layer is stored in a cylindrical container having two body fluid flow ports. The cylindrical filter layer is disposed so that the inner space of a container can be divided into two parts by making its both end parts fluid-tight and fixing at least one of these both end parts to the inner wall surface of the container. One of the inner spaces of the container divided by the cylindrical filter layer is allowed to communicate with the first body fluid flow port and the other of the inner spaces of the container divided by the cylindrical filter layer is allowed to communicate with the second body fluid flow port. The body fluid treating cylindrical filter device is characterized in that a bar-like flow passage resistant member extending along the center axis is installed in the hollow part of the cylindrical filter layer, and a spacer layer for flowing the body fluid of 0.7 to 3.5 mm in thickness is formed between the outer peripheral surface of the cylindrical filter layer and the container and between the inner peripheral surface of the cylindrical filter layer and the flow passage resistance member.
Owner:ASAHI KASEI MEDICAL CO LTD
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