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1127 results about "Pressure range" patented technology

Low-temperature compatible wide-pressure-range plasma flow device

The invention is embodied in a plasma flow device or reactor having a housing that contains conductive electrodes with openings to allow gas to flow through or around them, where one or more of the electrodes are powered by an RF source and one or more are grounded, and a substrate or work piece is placed in the gas flow downstream of the electrodes, such that said substrate or work piece is substantially uniformly contacted across a large surface area with the reactive gases emanating therefrom. The invention is also embodied in a plasma flow device or reactor having a housing that contains conductive electrodes with openings to allow gas to flow through or around them, where one or more of the electrodes are powered by an RF source and one or more are grounded, and one of the grounded electrodes contains a means of mixing in other chemical precursors to combine with the plasma stream, and a substrate or work piece placed in the gas flow downstream of the electrodes, such that said substrate or work piece is contacted by the reactive gases emanating therefrom. In one embodiment, the plasma flow device removes organic materials from a substrate or work piece, and is a stripping or cleaning device. In another embodiment, the plasma flow device kills biological microorganisms on a substrate or work piece, and is a sterilization device. In another embodiment, the plasma flow device activates the surface of a substrate or work piece, and is a surface activation device. In another embodiment, the plasma flow device etches materials from a substrate or work piece, and is a plasma etcher. In another embodiment, the plasma flow device deposits thin films onto a substrate or work piece, and is a plasma-enhanced chemical vapor deposition device or reactor.
Owner:RGT UNIV OF CALIFORNIA

Process for PECVD of silicon oxide using TEOS decomposition

A high pressure, high throughput, single wafer, semiconductor processing reactor is disclosed which is capable of thermal CVD, plasma-enhanced CVD, plasma-assisted etchback, plasma self-cleaning, and deposition topography modification by sputtering, either separately or as part of in-situ multiple step processing. The reactor includes cooperating arrays of interdigitated susceptor and wafer support fingers which collectively remove the wafer from a robot transfer blade and position the wafer with variable, controlled, close parallel spacing between the wafer and the chamber gas inlet manifold, then return the wafer to the blade. A combined RF/gas feed-through device protects against process gas leaks and applies RF energy to the gas inlet manifold without internal breakdown or deposition of the gas. The gas inlet manifold is adapted for providing uniform gas flow over the wafer. Temperature-controlled internal and external manifold surfaces suppress condensation, premature reactions and decomposition and deposition on the external surface. The reactor also incorporates a uniform radial pumping gas system which enables uniform reactant gas flow across the wafer and directs purge gas flow downwardly and upwardly toward the periphery of the wafer for sweeping exhaust gases radially away from the wafer to prevent deposition outside the wafer and keep the chamber clean. The reactor provides uniform processing over a wide range of pressures including very high pressures. A low temperature CVD process for forming a highly conformal layer of silicon dioxide is also disclosed. The process uses very high chamber pressure and low temperature, and TEOS and ozone reactants. The low temperature CVD silicon dioxide deposition step is particularly useful for planarizing underlying stepped dielectric layers, either alone or in conjunction with a subsequent isotropic etch. A preferred in-situ multiple-step process for forming a planarized silicon dioxide layer uses (1) high rate silicon dioxide deposition at a low temperature and high pressure followed by (2) the deposition of the conformal silicon dioxide layer also at high pressure and low temperature, followed by (3) a high rate isotropic etch, preferably at low temperature and high pressure in the sane reactor used for the two oxide deposition steps. Various combinations of the steps are disclosed for different applications, as is a preferred reactor self-cleaning step.
Owner:APPLIED MATERIALS INC

Gas generating system

A gas generating system (10) including a baffle system (42) for modifying the temperature and pressure of a gas generated by the system, and to remove particulates from the gas. The gas generating system includes a first combustion chamber (34a), a second combustion chamber (36a), and the baffle system (42) adjacent both the first and second combustion chambers so as to enable fluid communication with the combustion chambers upon activation of the gas generating system. In another aspect of the present invention, a baffle system (42) is provided including a first end plate (44) having an opening (44b) formed therein for enabling fluid communication with a first fluid source (34a), a second end plate (46) having an opening (46b) formed therein for enabling fluid communication with a second fluid source (36a), and a sequence of baffle elements (48) extending between the first and second end plates. A first baffle element (48a) of the sequence of baffle elements defines a chamber (60) for receiving therein a fluid through the openings in the first and second end plates. Each additional baffle element in the sequence of baffle elements is spaced outwardly apart from a preceding baffle element in the sequence of baffle elements. In another aspect of the invention, a method is provided for producing, in a gas generating system, a gas having a pressure within a predetermined pressure range and a temperature within a predetermined temperature range. In another aspect of the present invention, a vehicle occupant protection system is provided.
Owner:JOYSON SAFETY SYST ACQUISITION LLC

High-temperature high-pressure explosion limit tester, method for determining explosion limit, and application thereof

ActiveCN102937603AReduce wall effectMaterial exposibilityEngineeringHigh pressure
The invention provides a novel high-temperature high-pressure explosion limit tester comprising a raw material gas supply apparatus, an explosion determination device, a vacuum generating device, and a controlling device. The explosion determination device is mainly composed of a pressure sensor, a temperature sensor, and an igniter. The explosion determination device is used for determining explosion limit, explosion pressure and explosion temperature of the gas or vapor. The vacuum generating device is used in vacuum pumping upon the explosion determination device. The controlling device is used for determining, controlling and collecting experimental data generated during the experiment. Compared with prior arts, the high-temperature high-pressure explosion limit tester provided by the invention has a temperature testing range of room temperature to 400 DEG C, which is higher than 200 DEG C which is a maximal temperature of instruments in existing standards; the tester provided by the invention has a pressure range of normal pressure to 2.2MPa, which is higher than 1.38MPa which is a maximal pressure of instruments in existing standards; and the tester provided by the invention has a test volume of 10L, which is larger than that of an existing tube-type explosion limit tester, such that a wall effect can be better reduced.
Owner:CHINA PETROLEUM & CHEM CORP +1

Automatic control system and method for bottom hole pressure in the underbalance drilling

This invention provides an automatic control system and method for bottom hole pressure (BHP) in the underbalance drilling. It relates to a computer automatic control technology. The automatic control system according to the invention includes a processing module for the BHP based on the mechanisms of hydraulics. The BHP in the underbalance drilling is calculated from the acquired standpipe pressure (SPP), the calculated circulating pressure loss in the drilling tools, drill bit pressure drop and the fluid column pressure in the drill string. The resulting BHP is then compared with the set pressure value of the system. In case that the BHP is higher or lower than the set pressure, an instruction to regulate throttle valve opening will be issued in order to bring the BHP back to the set pressure range and complete BHP monitoring and control. The automatic control system and method according to the invention enable real-time tracking of the changes in BHP and achieve accurate and timely adjustment and control of BHP. The automatic control system and method improve the level of automation in the underbalance drilling process, and also enhance the reliability and safety in the underbalance drilling operation, which have wide foreground for application.
Owner:CHINA PETROCHEMICAL CORP +1

Method for enhancing electrostatic spinning nanofiber membrane

The invention discloses a method for enhancing an electrostatic spinning nanofiber membrane. The blending electrostatic spinning-hot rolling bonding net fixing technology which can effectively improve the strength of the electrostatic spinning nanofiber membrane is provided. The method for enhancing the electrostatic spinning nanofiber membrane is characterized in that interphase blending electrostatic spinning is conducted through multiple types of thermoplastic high polymers with the fusion point at least 20 DEG C lower than that of other components or low-fusion-point thermoplastic high polymers and non-thermoplastic high polymers, electrostatic spinning jet flows of the components are distributed frontwards and backwards in the moving direction of a receiving device, and fibers are distributed randomly in a staggered mode; after hot rolling is conducted on a blending electrostatic spinning fiber membrane, the blending electrostatic spinning fiber membrane is treated, the hot pressing temperature is slightly higher than the fusion starting temperature of the low-fusion-point thermoplastic high polymers, time ranges from 1min to 10min, the pressure ranges from 1MPa to 20MPa, after hot pressing is conducted, part of the low-fusion-point thermoplastic high polymers is fused, point adhesion is generated on the nanofiber intersection portions, and a hole is not blocked. The method for enhancing the electrostatic spinning nanofiber membrane has the advantages that the strength of the prepared enhanced electrostatic spinning nanofiber membrane is far higher than that of a common electrostatic spinning membrane and original good performance of the electrostatic spinning nanofiber membrane can be kept.
Owner:TIANJIN POLYTECHNIC UNIV

Method for preparing Inconel 625 alloy spherical powder

A method for preparing Inconel 625 alloy spherical powder comprises following steps: according to the AMS 5666G standard, two-time vacuum smelting of alloy ingredient compositions and a master ingot is carried out; through forging and mechanical machining, the master ingot is made into an alloy electrode bar; atomizing equipment is subject to pre-vacuum-pumping treatment, mixed inert shielding gas is led into the atomizing equipment, and the pressure ranges from 0.1*105 Pa to 3*105 Pa; the electrode bar is fed into an atomizing chamber through a feeding system, a plasma torch is used for heating the end face of the electrode bar, metal liquid drops are prepared through the centrifugal effect of a rotating electrode, and the metal liquid drops are instantly solidified into the spherical metal powder; and a powder collecting device containing an electrostatic separation component carries out inclusion removing treatment and pure powder collection on the metal spherical powder. The method has the beneficial effects of being high in production efficiency, high in batch stability, high in fine powder yield and the like and can easily prepare the Inconel 625 alloy spherical powder with the high purification, the good sphericility degree and the high liquidity.
Owner:SINO EURO MATERIALS TECH OF XIAN CO LTD
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