5results about How to "Reduce connection resistance" patented technology

An IGBT bidirectional switch module disclosed by the present invention comprises a heat dissipation plate, a conductive sheet, one or more chip sets, a CLIP structure, signal terminals and power supply terminals, the signal terminals comprise first to fourth signal terminals, the power supply terminals comprise first to third power supply terminals, the chip sets are welded on the conductive sheet and comprise first and second IGBT chips, first and second diode chips, and the first and second diode chips are welded on the conductive sheet. The CLIP structure is a copper conducting strip and is welded on the electrode, the power supply terminal, the signal terminal and the conducting strip of the chipset through solder paste, the first diode chip, the second diode chip and the corresponding IGBT chips form a follow current loop, the first signal terminal and the second signal terminal are electrically connected with the G poles of the first IGBT chip and the second IGBT chip, the third signal terminal and the fourth signal terminal are electrically connected with the E poles of the first IGBT chip and the second IGBT chip, and the third signal terminal and the fourth signal terminal are electrically connected with the E poles of the first IGBT chip and the second IGBT chip. The first power supply terminal and the second power supply terminal are electrically connected with C poles of the first IGBT chip and the second IGBT chip, and the third power supply terminal is electrically connected with E poles of the first IGBT chip and the second IGBT chip. Compared with the prior art, the LED lamp has a good heat dissipation effect and can bear higher current.

The invention discloses an application and method of Tween 80 combined immobilization technology enhanced microorganisms in degradation of naphthalene pollution in water, the main body of the combined immobilization technology is SA / CS at Tween 80 hydrogel microspheres loaded with NM-1 flora, and the NM-1 flora is halotolerant bacteria obtained by enrichment and domestication from deep-sea sediments of a certain sea ditch. The SA / CS at Tween 80 microspheres are formed by crosslinking sodium alginate (SA), chitosan (CS) and Tween 80, hydroxyl functional groups of the Tween 80 and SA / CS are crosslinked to enhance the mechanical strength of the microspheres and regulate and control the pore structure to improve the mass transfer efficiency, hydrophobic-CH functional groups at the end positions of the Tween 80 strengthen the adsorption capacity to naphthalene, meanwhile, a co-crosslinking structure at the interface of the SA / CS at Tween 80 hydrogel microspheres forms a biochemical metabolic reaction buffer area, and the adsorption capacity to naphthalene is improved. The direct toxicity stress of the high-concentration naphthalene on the flora is effectively avoided, and the effective biological removal of the high-concentration naphthalene is realized. The SA / CS-coated Tween 80 hydrogel microspheres prepared by the invention can effectively maintain the efficient metabolic activity and degradation efficiency of the loaded NM-1 flora, and show excellent cycle stability and good engineering application potential.

The utility model provides a contact device, a relay and electric equipment. Relates to the technical field of electronic devices. The contact device comprises a contact body, a contact piece and a connecting piece. The contact element is connected with an external circuit; one of the contact piece and the contact body is a copper piece, and the other one of the contact piece and the contact body is an aluminum piece; the connecting piece is arranged between the contact body and the contact piece. The contact body and the contact piece are connected into a whole through the connecting piece, so that the problems of corrosion of a primary battery and difficult combination caused by direct contact of the contact piece and the contact body are avoided, the conductivity between the contact piece and the contact body is ensured, the connection strength of the contact piece and the contact body is improved, the service life of the contact device is prolonged, and the service life of the contact device is prolonged. The connection resistance between the contact device and the busbar is reduced, and the use performance of the contact device is improved.

Provided is a method for manufacturing a circuit connection structure, including the steps of: interposing a circuit connection adhesive film containing conductive particles between a first circuit component having a first electrode and a second circuit component having a second electrode, and thermally compressing the first circuit component and the second circuit component to electrically connect the first electrode and the second electrode to each other, the circuit connection adhesive film including a first adhesive layer containing conductive particles and a first thermosetting resin component, and a second adhesive layer provided on the first adhesive layer and containing a second thermosetting resin component, the circuit connection adhesive film having a difference (Tmax-T1) between a reaction start temperature T1 and a reaction peak temperature Tmax obtained from a differential scanning calorimetry curve of 20°C or less.

This invention discloses a single-tube power chip with self-protection function and its connection structure, belonging to the field of power electronics technology. Addressing the failure risk of power modules exploding or catching fire under short-circuit conditions, the chip includes a chip body, electrodes, and a copper strip. The electrodes are positioned above the chip body, and the copper strip has a fusible aperture for melting and cutting off the circuit when overheated by short-circuit current. The copper strip and the electrodes are fixed together by a conductive connection layer. This invention employs a dual protection mechanism of software and hardware protection. The software protection responds rapidly within 0.1ms at the initial stage of a short circuit, while the hardware protection forcibly disconnects the circuit within 10ms via the copper strip's fusible aperture. Even if the software protection fails, the hardware protection still ensures system safety, achieving absolute safety protection against short-circuit interruption under 1000V high voltage. This completely avoids failures such as continuous arcing, explosion, and fire. The use of copper strip instead of traditional binding wire, combined with nano-silver sintering technology, significantly reduces the thermal resistance of the connection structure.