The invention discloses a backward GPP (Glass Passivation Pellet) high voltage diode chip in an automobile module, and a production technology. The technology comprises the following steps of oxidation pretreatment, oxidation, photoetching, single-side oxidation layer removal, diffusion pretreatment, boron diffusion predeposition, boron diffusion, once phosphorus source/boron source diffusion, diffusion aftertreatment, N<+> surface mesa etching, electrophoresis, sintering, oxidation layer removal, nickel plating, gold plating and chip cutting. The obtained chip is in a P<++>-P<+>-N-N<+> type structure. According to the high voltage diode chip and the production technology, the defect of great electric leakage of a geminate axial diode is improved, damage to glass passivation protection during welding of a backward diode in a geminate GPP diode is avoided, an effective welding area is increased, and the whole heat dissipation function of the geminate diode is improved. An N-type substrate slice replaces a P-type substrate slice, and a backward GPP high voltage diode is manufactured in a deep N<+> surface corrosion groove, so that the backward GPP high voltage diode in the automobile module fills a gap in the technical field of domestic automobile modules.