81results about How to "Good solder wettability" patented technology

A zinc based solder material 55 of the present invention is prepared by providing on the surface of a zinc based material 50, from which an oxide film 501 has been removed or at which an oxide film 501 does not exist, with a coating layer 51 containing primarily a metal whose oxide is more easily reducible than the oxide film 501. In a joined body and a power semiconductor module of the present invention, the zinc based solder material 55 is used in the joining portion, and after joining, the coating layer 51 does not exist.

The present invention relates to an adhesive tape for electrically connecting semiconductor chips in a chip-on-chip type semiconductor device. The adhesive tape comprising: (A) 10 to 50 wt % of film forming resin; (B) 30 to 80 wt % of curable resin; and (C) 1 to 20 wt % of curing agent having flux activity.

A semiconductor device comprises a semiconductor integrated circuit, an external connection terminal connecting the semiconductor integrated circuit to an external device, and a plurality of tin or tin-alloy plating layers formed on the external connection terminal as multiple unleaded metal plating layers. The multiple unleaded metal plating layers comprise a first layer made of a tin alloy and provided as an inner layer of the multiple unleaded metal plating layers, the tin alloy of the first layer containing as a second element one of bismuth, silver, copper, indium, and zinc, and a second layer made of either 100% tin or a tin alloy and provided as an outer surface layer of the multiple unleaded metal plating layers, the 100% tin or the tin alloy of the second layer having a percentage of tin content greater than that of the first layer.

An electronic component that prevents or minimizes whiskers or has good solder wettability includes a rectangular solid-shaped electronic component element and external electrodes of terminal electrodes provided at opposed end surfaces of the electronic component element. First plated films including Ni are provided on the surfaces of the external electrodes. Second plated films including Sn defining an outermost layer are arranged so as to cover the first plated films. The second plated films have a polycrystalline structure, and flake-shaped Sn—Ni alloy grains are provided at a Sn crystal grain boundary. Intermetallic compound layers including Ni₃Sn₄ are provided at interfaces between the first plated films and the second plated films.

A wiring board to be used with being mounted on a packaging board includes a chip component surface-mounted on a surface facing the packaging board. The chip component includes terminal electrodes at both end portions of the component body thereof. Each of the terminal electrodes is provided in a form in which a plated film (Sn) formed on the surface of the terminal electrode is separated into two portions, one portion being on the wiring board side, and another portion being on the packaging board side. In one aspect, each of the terminal electrodes of the chip component is separated into a portion on the wiring board side and a portion on the packaging board side, and the plated film (Sn) is formed on a surface of each of the separated portions of each of the terminal electrodes.

A solder resist ink composition for printed circuit boards which is suitable for forming, with satisfactory adhesion, a primer deposit layer, e.g., an Ni-Au deposit layer, having satisfactory wettability by a solder. The composition comprises a thermosetting ingredient, comprising as the main component (A) a photosensitive prepolymer having a carboxyl group and at least two ethylenically unsaturated bonds per molecule and having an acid value of 50 to 150 mg-KOH/g on a solid basis, (B) a photopolymerization initiator having a melting point of 100 DEG C or higher, (C) a diluent, and (D) an epoxy compound having two or more epoxy groups per molecule.

Lead frames of a Pd-PPF structure for use in a semiconductor device comprising inner leads and outer leads, wherein a whole surface of the substrate constituting the lead frame or at least the outer leads has a composite plated layer, and the composite plated layer comprises an underlayer consisting of an Ni-based plating layer deposited on the whole surface of the substrate constituting the lead frame or on at least the outer leads, a Pd— or Pd alloy-plating layer deposited at a thickness of 0.005 to 0.01 μm on an upper surface of the underlayer, and an Au-plating layer deposited at a thickness of 0.02 to 0.1 μm on an upper surface of the Pd— or Pd alloy-plating layer. When a semiconductor device is mounted on a packaging substrate by using a lead-free Sn—Zn-based solder or any other lead-free solder, the wettability between the lead frame and the lead-free Sn—Zn-based solder or any other lead-free solder is improved to thereby improve the packaging property of the semiconductor device.

An electronic component has an element body, and a plurality of external electrodes formed on one principal face of the element body. Each external electrode has a first electrode layer joined to the one principal face of the element body, and a second electrode layer joined as laid on an inside region inside an edge of the first electrode layer. An apical surface of the second electrode layer is planar. A joint portion in the second electrode layer to the first electrode layer is rounded.

To provide an electrolytic capacitor having lead wires excellent in weldability with a boss member made of aluminum, excellent in solder wettability, and less whisker. The lead wires have a nickel plating layer in a thickness of 0.3 to 5.0 μm, a palladium plating layer in a thickness of 0.01 to 0.10 μm, and a gold plating layer in a thickness of 0.002 to 0.030 μm.

Tin-plated copper-alloy material for terminal having: a substrate made of Cu or Cu alloy; an Sn-based surface layer formed on a surface of the substrate; and a Cu—Ni—Sn alloy layer including Ni formed between the Sn-based surface layer and the substrate, in which the Cu—Ni—Sn alloy layer is made of: fine Cu—Ni—Sn alloy particles; and coarse Cu—Ni—Sn alloy particles, an average thickness of the Sn-based surface layer is not less than 0.2 μm and not more than 0.6 μm, an area ratio of the Cu—Ni—Sn alloy layer exposed at a surface of the Sn-based surface layer is not less than 10% and not more than 40%, and a coefficient of kinetic friction of the tin-plated copper-alloy material for terminal is not more than 0.3.

Provided is a copper alloy sheet which is excellent in terms of resistance to stress corrosion cracking, stress relaxation property, tensile strength, proof stress, electrical conductivity, bendability, and solder wettability. The copper alloy sheet contains 4-14 mass% Zn, 0.1-1 mass% Sn, 0.005-0.08 mass% P, and 1.0-2.4 mass% Ni, with the remainder comprising Cu and unavoidable impurities, and satisfies the relational expressions 7<=[Zn]+3*[Sn]+2*[Ni]<=18, 0<=[Zn]-0.3*[Sn]-1.8*[Ni]<=11, 0.3<=(3*[Ni]+0.5*[Sn])/[Zn]<=1.6, 1.8<=[Ni]/[Sn]<=10, and 16<=[Ni]/[P]<=250. The copper alloy sheet has an average crystal grain diameter of 2-9 [mu]m and contains circular or elliptic precipitates which have an average grain diameter of 3-75 nm or in which precipitate grains each having a grain diameter of 3-75 nm account for 70% by number or more of all the circular or elliptic precipitates. The copper alloy sheet has an electrical conductivity of 24% IACS or greater and a degree of stress relaxation, measured at 150 DEG C for 1,000 hours as an index to resistance to stress relaxation, of 25% or less.

A tin-plated copper-alloy terminal material wherein: a Sn-based surface layer formed on a surface of a substrate made of Cu alloy, and a Cu—Sn alloy layer/a Ni—Sn alloy layer/a Ni or Ni alloy layer are formed in sequence from the Sn-based surface layer between the Sn-based surface layer and the substrate; the Cu—Sn alloy layer is a compound-alloy layer containing Cu₆Sn₅ as a main component and a part of Cu in the Cu₆Sn₅ is displaced by Ni; the Ni—Sn alloy layer is a compound-alloy layer containing Ni₃Sn₄ as a main component and a part of Ni in the Ni₃Sn₄ is displaced by Cu; an arithmetic average roughness Ra of the Cu—Sn alloy layer is 0.3 μm or more in at least one direction and arithmetic average roughness Ra in all directions is 1.0 μm or less; an oil-sump depth Rvk of the Cu—Sn alloy layer is 0.5 μm or more.

The invention discloses a halogenless soldering flux for a tin and bismuth low-temperature solder wire, which comprises the following components in percentage by total weight: 3-5 percent of benzene acid activating agent, 1-2 percent of carbazole active strengthening agent, 0.5-1.0 percent of alcohol amine inhibitor, 5-10 percent of resin softening agent and the balance of resin, wherein the resin is at least one of polyamide resin, fully-hydrogenated rosin resin and modified rosin resin. The halogenless soldering flux has the beneficial effects that the benzene acid activating agent and the carbazole active strengthening agent are mutually matched, so that the welding activity is greatly improved, a metal oxide film is effectively removed, and the welding wettability is improved; meanwhile, the alcohol amine inhibitor is adopted for preventing the secondary oxidation of a pad, components are not corroded after the completion of welding, the insulation resistance is high, and residues after welding are prevented from blackening; with the adoption of the resin softening agent, the residues are not only stable, but also cool and transparent in appearance; and the tin and bismuth low-temperature welding requirements in the electronic industry can be met.

A printed wiring board comprises a pad on which a surface mounting component is mounted, and a through hole into which a lead wire of an electronic component provided with the lead wire is inserted, and a surface treatment is performed to apply nickel-gold plating to the through hole to coat the pad with a water-soluble preflux.