The invention relates to the technical field of
cutting pick
machining, in particular to a high-temperature-
impact-resistant PDC
cutting pick preparation technology, it is guaranteed that the purity and the
granularity meet the requirements through selection of raw materials, for example,
silicon carbide whiskers and multi-walled carbon nanotubes have high high-
temperature resistance, the high-temperature
thermal stability of
polycrystalline diamond compacts is greatly enhanced through addition of the
silicon carbide whiskers and the multi-walled carbon nanotubes, and the high-temperature
impact resistance of the
polycrystalline diamond compacts is improved through addition of the
silicon carbide whiskers and the multi-walled carbon nanotubes; the preparation method comprises the following steps: preparing raw materials, removing impurities on the raw materials through pretreatment to ensure the surface activity so as to facilitate subsequent combination, then removing the surface adsorption phenomenon of the raw materials and avoiding possible oxidation reaction through wet ball milling, sieving and reduction, and then carrying out preliminary forming through low-pressure pre-pressing to
discharge air in the
raw material powder and improve the pressing density; according to the high-temperature and ultrahigh-pressure
sintering process for the
polycrystalline diamond compact with the SiCw / CNTs added, the density and the shape of a
green body are ensured, and then the finished PDC
cutting pick meeting the requirement is obtained through high-temperature and high-pressure
sintering, step-by-step pressure relief and finish
machining.