12516 results about "Carbide silicon" patented technology

The invention relates to an ultrahigh-voltage silicon carbide start control chip protection method and system, and the method comprises the steps: obtaining the operation parameters and composite structure characteristic data of an ultrahigh-voltage silicon carbide start control chip, and carrying out the TVS-MOSFET hierarchical characteristic analysis, and obtaining the real-time state information of the chip; acquiring a grid charging curve of the ultrahigh-voltage silicon carbide starting control chip, and performing correlation analysis on the grid charging curve and the real-time state information of the chip to obtain a multi-threshold protection parameter; acquiring current change data of the ultrahigh-voltage silicon carbide starting control chip, and performing Miller platform feature analysis on the real-time state information of the chip to obtain a current abnormal trend; performing temperature control construction on a multi-threshold protection parameter and the current abnormal trend to obtain an initial control scheme; and carrying out clamping turn-off strategy construction on the initial control scheme and the potential fault area to obtain a chip start protection strategy. Optimized starting protection of the chip can be achieved through the comprehensive adjustment strategy, and therefore the service life of the chip is effectively prolonged.

The invention relates to the technical field of nano ceramic materials, and discloses a high-strength nano aluminum oxide ceramic product and a preparation process thereof.The preparation process comprises the following preparation steps that aluminum oxide powder, a composite binder, composite gel, a plasticizer and a solvent are mixed and subjected to ball milling, and composite slurry is obtained; placing the composite slurry in a mold, and performing mold pressing and drying to obtain a green body; and putting the green body into a high-temperature sintering furnace, carrying out high-temperature sintering, and cooling to room temperature to obtain the nano aluminum oxide ceramic product. Nano zirconium oxide and nano magnesium oxide are formed on the surfaces of the pretreated silicon carbide whiskers, and can form a solid solution with nano aluminum oxide in the sintering process to serve as a bridge of the silicon carbide whiskers and nano aluminum oxide particles, so that the binding force of the silicon carbide whiskers in a nano aluminum oxide ceramic matrix is remarkably enhanced; phosphoric acid and aluminum ammonium sulfate are firmly combined on the surfaces of nanometer aluminum oxide particles through carboxymethyl cellulose, and the situation that phosphoric acid and aluminum ammonium sulfate are not firmly combined with the nanometer aluminum oxide particles is avoided.

The invention belongs to the technical field of polymer plastic materials, and particularly relates to a high-temperature-resistant anti-corrosion polytetrafluoroethylene material and a preparation method thereof. The polytetrafluoroethylene is prepared from the following raw materials in parts by weight: 50 to 60 parts of polytetrafluoroethylene, 5 to 10 parts of fluorinated modified graphene oxide, 3 to 5 parts of aluminum powder, 5 to 8 parts of modified silicon carbide fiber, 3 to 5 parts of silane modified nano silicon dioxide, 2 to 3 parts of polyphenylene sulfide, 2 to 3 parts of polyimide, 0.5 to 0.8 part of dispersing agent and 0.5 to 1 part of antioxidant. The heat conduction performance and the interface bonding force are improved through the fluorinated modified graphene oxide, the impact resistance and the wear resistance are enhanced through the silicon carbide fibers, and the corrosion resistance and the wear resistance are improved through the aluminum powder; silane modified silicon dioxide enhances the mechanical property of the composite material by improving the dispersity of the filler, and PPS and PI interact with the surface of the filler through polar groups in molecular chains, so that the interface strength is improved, and the toughness and the thermal stability are improved.

The invention provides a planar gate silicon carbide VDMOS capable of improving short circuit reliability and a preparation method, and the preparation method comprises the steps: depositing metal on the lower side surface of a silicon carbide substrate, and forming drain electrode metal; performing epitaxial growth on the upper side surface of the silicon carbide substrate to form a drift layer; performing ion implantation on the drift layer to form a current sharing layer; forming a barrier layer on the drift layer, and performing etching and ion implantation to form a P-type well region and a low-resistance region; a barrier layer is formed again, etching and ion implantation are carried out, and an N-type source region and a P-type source region are formed; re-forming a barrier layer, etching the barrier layer to form a through hole, and depositing to form a first gate dielectric layer; depositing to form a second gate dielectric layer; a barrier layer is formed again, the barrier layer is etched to form a through hole, metal is deposited, and a gate metal layer is formed; and re-forming a barrier layer, etching the barrier layer to form a through hole, depositing metal, forming a source metal layer, and removing the barrier layer to complete preparation. And the heat conduction capability and the thermal reliability of the insulating medium are effectively improved.

The invention relates to the technical field of carbon fiber reinforced ceramic matrix composites, in particular to a sintering process of a surface-modified short carbon fiber reinforced ceramic matrix composite, which comprises the following steps: surface modification treatment of short carbon fibers, preparation of a ceramic matrix material, mixing of the short carbon fibers and ceramic powder, compression molding and sintering. In the invention, the process is not only suitable for various ceramic matrixes such as aluminum oxide, silicon carbide, silicon nitride, zirconium oxide and the like, but also can flexibly adjust process parameters such as oxidizing agent types, coupling agent treatment time, ceramic powder particle size, forming pressure, sintering temperature and the like, so that customized preparation with different application requirements is realized; the prepared composite material has extremely high toughness, wear resistance and high-temperature resistance, and shows a wide application prospect.

The invention relates to the technical field of ceramics, and particularly discloses a preparation method of a bamboo charcoal pot ceramic material, which comprises the following steps: weighing the following raw materials in parts by weight: 25-30 parts of bamboo charcoal powder, 20-25 parts of quartz powder, 10-15 parts of silicon carbide, 10-14 parts of a whisker readjustment-based bonding agent, 8-12 parts of albite, 7-11 parts of a magnesium oxide-doped modified filling agent and 5-10 parts of clay. According to the bamboo charcoal pot ceramic material disclosed by the invention, the bamboo charcoal powder is matched with the quartz powder, silicon carbide, albite and clay raw materials, and the impact resistance, the heat-conducting property and the wear-resisting property of the product are harmoniously improved by adding the continuous balance agent based on whisker readjustment and the filling agent modified by doped magnesium oxide and blending and matching the raw materials; and the product has remarkable cold and heat resistance and scrubbing stability.

The invention discloses a carbon composite ceramic linear resistor and a preparation method thereof, and belongs to the technical field of power electronic components. The invention provides a preparation method of a carbon composite ceramic linear resistor, which comprises the following steps: uniformly mixing bentonite, silicon carbide and nano carbon black to obtain powder, uniformly mixing the powder and ethanol, drying, adding a binder solution, and carrying out green body forming to obtain a green body; carrying out heat preservation on the green body at 1150-1300 DEG C in a nitrogen-containing gas atmosphere to obtain a sample; and polishing the sample, and spraying aluminum to obtain the carbon composite ceramic linear resistor. According to the method for preparing the carbon composite ceramic linear resistor, the resistivity of the material can be reduced, and the thermal shock resistance of the ceramic resistor can be improved.

The invention provides a low-on-resistance trench gate silicon carbide VDMOS and a preparation method thereof, and the method comprises the steps: depositing metal on the lower side surface of a silicon carbide substrate, and forming a drain metal layer; epitaxially growing on the upper side surface of the silicon carbide substrate to form a drift layer; performing ion implantation to form a low-resistance region; forming a barrier layer, etching, performing ion implantation, and forming a P + well region, a P-type well region and an N-type source region; a barrier layer is formed again, and the insulating medium is etched and deposited; forming a barrier layer again, etching and depositing metal, and forming a suspension gate; forming a barrier layer again, etching the barrier layer, and depositing to form an insulating medium layer; forming a barrier layer again, etching and depositing metal, and forming a gate metal layer; the barrier layer is re-formed, the barrier layer is etched to form a through hole, the drift layer is etched to the upper side face of the P-type well region, metal is deposited, a source electrode metal layer is formed, the barrier layer is removed, preparation is completed, gate-drain capacitance is reduced, the switching speed of the device is increased, and switching loss is reduced.

The invention provides a high-reliability planar gate silicon carbide VDMOS and a preparation method thereof, and the method comprises the steps: depositing metal on the lower side surface of a silicon carbide substrate, and forming a drain metal layer; epitaxially growing on the upper side surface of the silicon carbide substrate to form a drift layer; a barrier layer is formed, etching and ion implantation are carried out, and a current sharing layer, a body region, a P-type well region and an N-type source region are formed; forming a barrier layer again, etching and depositing to form an insulating medium layer; a barrier layer is formed again, and etching and deposition are carried out to form a gate dielectric layer; the preparation method comprises the following steps: forming a barrier layer again, etching, depositing metal, forming a gate metal layer and a source metal layer, removing the barrier layer, and completing the preparation. The gate reliability of the device can be effectively improved, and the follow current loss and reverse recovery speed of a body diode can be effectively improved.

The invention relates to the technical field of low-dielectric heat-conducting functional materials, in particular to a nano silicone rubber composite material as well as a preparation method and application thereof. According to the preparation method, a modified vinyl silsesquioxane coupling agent is taken as a bridge, and boron nitride nanosheets, silicon carbide nanowires and the modified vinyl silsesquioxane coupling agent are covalently connected through hydrolysis reaction, so that a heterostructure is constructed, and the nano heat-conducting filler is obtained; the preparation method comprises the following steps: dispersing a nano heat-conducting filler in vinyl silicone oil, and constructing a covalent cross-linked network through addition cross-linking reaction and curing treatment to obtain the nano composite silicone rubber material. According to the processing method, the filling amount, the dielectric constant and the dielectric loss can be reduced, meanwhile, the heat conduction capacity is improved, and the problems that in the prior art, the dielectric constant and the dielectric loss are low due to simple mixing of the boron nitride nanosheets and the silicon carbide nanowires are solved.

The invention provides a temperature compensation method and device for a silicon carbide MOS drive control chip, and the method comprises the steps: obtaining a junction temperature-electrical parameter set of a silicon carbide MOS, and carrying out the thermoelectric coupling simulation modeling processing of a junction temperature-electrical parameter mapping data set, and obtaining three-dimensional temperature-efficiency characteristic data; performing real-time parameter analysis and dynamic execution on the three-dimensional temperature-efficiency characteristic data to obtain an optimized switching characteristic waveform; extracting the optimized switching characteristic waveform frequency domain characteristics, and generating a dynamic frequency modulation parameter; and performing dead time iterative optimization on the dynamic frequency modulation parameters to obtain a control parameter combination of the silicon carbide MOS.

The invention belongs to the technical field of battery materials, and particularly relates to a method for preparing a porous carbon structure containing a sub-nanoscale ionic conduction improvement layer by utilizing atomic layer deposition and application. The invention discloses a porous carbon-silicon negative electrode structure, which is characterized in that a sub-nano-scale ion conduction improvement layer is added between a porous carbon substrate and silicon particles, and the sub-nano-scale ion conduction improvement layer comprises silicon carbide, aluminum phosphide, aluminum nitride, aluminum oxide, lithium phosphate, aluminum phosphate and lithium aluminum phosphate. Meanwhile, the invention also discloses a preparation method of the porous carbon-silicon negative electrode structure, namely, a sub-nano-scale ion conduction improvement layer is deposited on the porous carbon substrate through an atomic layer deposition method, so that the binding force between the sub-nano-scale ion conduction improvement layer and silicon particles and an ion transport channel are increased, and the ion conduction of a vapor deposition silicon-carbon negative electrode material is improved; the polarization of the material is effectively reduced, so that the rate capability of the battery is improved, and the cycling stability of the porous carbon structure battery is improved.

The invention relates to the technical field of ceramic clay, in particular to wear-resistant ceramic clay and a preparation method thereof.The wear-resistant ceramic clay is prepared from, by weight, 35-40 parts of kieselguhr, 15-20 parts of silicon carbide, 8-12 parts of modifier based on mullite modification, 5-8 parts of modified cordierite agent, 4-7 parts of aluminum oxide, 4-7 parts of calcined talc, 3-5 parts of potassium feldspar and 30-35 parts of water. According to the wear-resistant ceramic clay disclosed by the invention, the diatomite and the silicon carbide are matched with the aluminum oxide, the calcined talc and the potassium feldspar, and the modifier based on mullite modification and the modified cordierite agent are added, so that the wear resistance, the stain resistance and the heat-conducting property of the obtained ceramic clay are coordinated and improved through co-blending and matching of the raw materials and mutual enhancement and improvement of the raw materials; meanwhile, the product is remarkable in anti-damage stability effect.

The invention relates to the technical field of metal sliding bearings, and provides a liquid metal sliding bearing with high sealing performance, which comprises a mandrel, a graphite sealing assembly, a flange and a shaft sleeve, and further comprises a ternary gallium-based liquid metal and a silicon carbide ceramic coating, wave-shaped check rings are arranged among the multiple graphite rings at intervals, initial contact loads are provided through the wave-shaped check rings, the graphite rings and the flange are tightly attached, static sealing with excellent performance is formed in the static state, and the fit clearance between the mandrel and the shaft sleeve is filled with ternary gallium-based liquid metal. A silicon carbide ceramic coating is plated at the matching position of the mandrel and the flange, and a silicon carbide ceramic coating is also plated at the matching position of the mandrel and the shaft sleeve. By using the graphite ring, the ternary gallium-based liquid metal and the silicon carbide ceramic coating, the liquid metal has good fluidity, so that the interface can be fully filled, the liquid metal is not easy to volatilize, the lubricating effect is better, the friction factor is low, and the wear resistance is better.

A doped or undoped silicon carbide film can be deposited using a remote plasma chemical vapor deposition (CVD) technique. One or more silicon-containing precursors are provided to a reaction chamber. Radical species, such as hydrogen radical species, are provided in a substantially low energy state or ground state and interact with the one or more silicon-containing precursors to deposit the silicon carbide film. A co-reactant may be flowed with the one or more silicon-containing precursors, where the co-reactant is a carbon-containing precursor and each silicon-containing precursor is a silane-based precursor with at least a silicon atom having two or more hydrogen atoms bonded to the silicon atom.

The invention relates to the technical field of deep learning, in particular to a stress distribution monitoring and crack risk prediction method for a silicon carbide part, which realizes comprehensive sensing of the stress state of the silicon carbide part, accurate positioning of a risk area and advanced early warning of a crack fault. The method comprises the following steps: synchronously acquiring multi-modal data through multiple types of sensors, and realizing cross-modal time sequence synchronization through feature alignment; designing a crack risk multi-branch feature extraction module, and respectively extracting general depth features and risk features oriented to thermal stress mismatch, microcrack evolution and structural instability through a shared backbone network and a special branch network; constructing a stress nephogram generation and risk area positioning module based on a graph neural network, and realizing visual reasoning and risk area marking from discrete features to full-field stress distribution; and designing a crack risk comprehensive prediction module based on multi-dimensional risk feature fusion, fusing an instantaneous state and an evolution trend, outputting a multi-risk confidence vector and triggering graded early warning.

The invention discloses a reaction-sintered silicon carbide setter plate and a preparation method thereof. The reaction-sintered silicon carbide setter plate product is obtained through powder granulation, compaction and reaction sintering. Wherein the silicon carbide powder of the four particle size sections is matched, the particle size sections are uniform, stacking is more reasonable, coarse particles form a frame, fine particles are filled among the coarse particles, the powder structure is compact in property, and the compactness of a green body obtained after blank pressing is guaranteed; and spray granulation is performed after ball milling, so that all the raw materials and auxiliary materials are uniformly mixed. The surface of the green body pressed by a set oil pressure mold is also provided with a concave-convex structure, so that the contact area between the load bearing plate and the bottom of the domestic porcelain is reduced, air circulation between the load bearing plate and the bottom of the domestic porcelain is increased, and adhesion is effectively avoided. The product has the advantages of long service life, high strength and fast heat conduction, solves the problems of low strength, low heat conductivity and short service life of mullite, and also solves the industrial pain point of adhesion of a reaction-sintered silicon carbide setter plate.

The invention belongs to the technical field of crystal growth, and provides a low-resistivity silicon carbide single crystal growth method and system and a single crystal, silicon carbide powder is uniformly paved at the bottom of a graphite crucible, metal carbide material particles are uniformly paved on the surface of the silicon carbide powder, and silicon carbide seed crystals are adhered to the top of the graphite crucible; the graphite crucible is sealed, and the interior of the graphite crucible is vacuumized; heating the graphite crucible subjected to vacuumizing treatment, filling carrier gas into the graphite crucible, then slowly replacing the carrier gas with doped source gas, slowly increasing the growth pressure to a set pressure, and growing a buffer layer; after the growth of the buffer layer is completed, changing the growth condition to grow the heavily doped silicon carbide single crystal; and after the growth of the crystal is completed, cooling the graphite crucible subjected to vacuumizing treatment, so that the crystal is naturally cooled, and the low-resistivity silicon carbide single crystal is obtained. The doping concentration of the silicon carbide single crystal can be improved, and the resistivity of the silicon carbide material can be reduced.

Crystal growth systems with a baffle are provided. In one example, a crystal growth system for growing crystalline material, the crystalline material including silicon carbide, includes a seed holder configured to hold a silicon carbide seed crystal. The seed crystal provides a growth surface for growth of the silicon carbide crystalline material. The system includes a crucible at least partially defining a crystal growth chamber. The system includes a source material. The system includes one or more baffles within the crystal growth chamber and spaced apart from the source material. The one or more baffles include one or more apertures defined through the one or more baffles. The baffle includes a long dimension that is non-perpendicular to the growth surface of the seed crystal.

The invention provides an additive manufacturing method of a short fiber reinforced ceramic composite aircraft engine swirler, which comprises the following manufacturing steps: performing interface preparation on the fiber surface to obtain composite powder, and mixing the powder with silicon carbide powder and resin to obtain mixed powder; carrying out selective laser sintering printing molding on the mixed powder to obtain a ceramic green body, and carrying out degreasing treatment to obtain an intermediate; performing two-step impregnation and cracking on the intermediate through a ceramic precursor and resin to obtain a preform 2, performing gas / liquid phase reaction sintering treatment on the preform 2 to obtain Cf / SiC ceramic, depositing silicon carbide on Cf / SiC through a chemical vapor infiltration method, and performing abrasive flow grinding and polishing to obtain a finished product. The short fiber reinforced silicon carbide powder precise printing forming swirler is achieved, fiber, silicon carbide and resin powder are subjected to composite granulation, fiber agglomeration is weakened, the powder density is increased, the cohesive force between carbon fibers is increased, and therefore the biscuit density is increased; and structure accurate forming and surface quality control of the swirler with the complex structure are facilitated.

The invention relates to the technical field of material processing, in particular to a silicon carbide polishing solution containing a composite silica sol abrasive as well as a preparation method and application of the silicon carbide polishing solution. The silicon carbide polishing solution containing the composite silica sol abrasive comprises the following components in percentage by mass: 1%-20% of the composite silica sol abrasive, 0.01%-1% of a dispersing agent, 0.1%-10% of an oxidizing agent, 1%-20% of an auxiliary oxidizing agent, 0.001%-0.1% of a pH regulator and the balance of deionized water, the composite silica sol abrasive material comprises at least two kinds of silica sol with the particle size difference being 50 nm or above. Silica sol with different particle sizes is adopted to prepare the irregular composite abrasive material, the irregular composite abrasive material is matched with various assistants to improve the dual effects of chemical oxidation and mechanical friction, the mechanical friction point and wear resistance of the silicon carbide polishing solution can be enhanced, meanwhile, surface scratches and damaged layers of wafers are not prone to being caused in the polishing process, and the surface roughness is low.

The invention relates to the technical field of silicon carbide product production, in particular to an automatic silicon carbide product cleaning device which comprises a bottom plate, the top of the bottom plate is provided with a first cleaning mechanism and a second cleaning mechanism which are arranged front and back and a liquid conveying mechanism located on the left side of the first cleaning mechanism, and the top of the bottom plate is fixedly connected with a top plate through a vertical plate; a conveying mechanism is installed on the top plate, and a storage mechanism is placed in the first cleaning mechanism. Through cooperative use of the first cleaning mechanism, the second cleaning mechanism and the transportation mechanism, the transportation mechanism firstly puts the storage mechanism loaded with the wafer into the spraying pool for first spraying and brushing, and then the transportation mechanism puts the storage mechanism into the soaking pool for multi-directional soaking and brushing; and then the conveying mechanism puts the storage mechanism into a spraying pool for spraying and washing, and the wafers are efficiently cleaned in a mode of combining spraying and scrubbing, soaking and scrubbing, and spraying and washing finally.

The invention discloses an online aging state monitoring method and system for a silicon carbide MOSFET, and belongs to the technical field of semiconductor device monitoring, and the method specifically comprises the steps: collecting the working voltage, working current and junction temperature data of the silicon carbide MOSFET in real time, analyzing and processing the data through a data processing unit, and extracting the aging state characteristic parameters of the MOSFET; a dynamic aging state evaluation model fusing multi-source data and time sequence information is adopted to evaluate the aging state of the silicon carbide MOSFET, and a result is output to a display unit; according to the method, the aging state of the silicon carbide MOSFET is monitored, multi-level alarm strategies are set, different levels of alarm signals are triggered according to the aging state, meanwhile, feedback data are collected to optimize the state evaluation model, real-time and accurate monitoring of the aging state of the silicon carbide MOSFET is achieved, and the reliability and stability of a power electronic system are improved.

The invention relates to the technical field of high polymer materials, and particularly provides a self-repairing type UV curing alumite color layer coating and a preparation method thereof. The water-based ink is prepared from, by weight, 30-50 parts of polyurethane acrylic resin, 10-25 parts of modified acrylic oligomer containing dynamic covalent bonds, 2-5 parts of photoinitiator, 3-8 parts of hydrophobic modified nano filler and 1-3 parts of cross-linking agent, and the dynamic covalent bonds are selected from at least one of hydrazide bonds, boric acid ester bonds and Diels-Alder bonds. By introducing a gradient energy collaborative network of dynamic covalent bonds and quadruple hydrogen bonds, rapid self-repairing of the coating at normal temperature and thermal triggering recombination of deep damage are achieved, and meanwhile through the micro-phase separation design of the hydrophobic core-shell filler and the graft modified silicon carbide nanowires, the hydrolysis resistance is improved.

A doped or undoped silicon carbide film can be deposited using a remote plasma chemical vapor deposition (CVD) technique. One or more silicon-containing precursors are provided to a reaction chamber. Radical species, such as hydrogen radical species, are provided in a substantially low energy state or ground state and interact with the one or more silicon-containing precursors to deposit the silicon carbide film. A co-reactant may be flowed with the one or more silicon-containing precursors, where the co-reactant can be a depositing additive or a non-depositing additive to increase step coverage of the silicon carbide film.

The invention discloses a preparation process of an aluminum oxide ceramic material, which comprises the following steps: S1, pretreatment of aluminum oxide powder: taking alpha-Al2O3 powder as a raw material, adding a dispersion medium, carrying out ball milling, transferring into an ultrasonic dispersion machine, dispersing, and further carrying out vacuum drying to obtain pretreated aluminum oxide powder; s2, chemical activation treatment: weighing pretreated aluminum oxide, magnesium oxide, nano silicon dioxide, calcium oxide, zirconium dioxide, titanium dioxide and modified nano silicon carbide in parts by weight, mixing, sequentially adding a dispersing agent absolute ethyl alcohol and a KH550 silane coupling agent, stirring at a high speed, adding a polyvinyl alcohol binder, and continuously stirring to obtain ceramic slurry; s3, sieving the ceramic slurry, filling the ceramic slurry into a mold, and performing isostatic pressing to obtain a ceramic green body; and S4, putting the ceramic green body into a box-type sintering furnace, sintering step by step, and cooling to room temperature along with the furnace to obtain the aluminum oxide ceramic material. The prepared aluminum oxide ceramic material has high compactness, excellent dielectric strength and mechanical property, low energy consumption and great application potential.

The invention provides conductive paste for a heterojunction solar cell and a preparation method of the conductive paste, and belongs to the field of conductive paste. The spherical nano-silver, the silver nanowires and the silver nanosheets are introduced, a three-dimensional conductive network is formed through three metal shapes, the conductivity of the paste is remarkably improved, high stability is kept in long-term use through the synergistic effect, and degradation of the conductivity is avoided; the carbon nanotubes are modified through mixed acid and a coupling agent, so that the dispersity is improved, the interface bonding force is enhanced, and the conductivity and mechanical strength of the slurry are improved; according to the graphene, the dispersity and compatibility are improved through introduction of sulfydryl, and the conductivity is restored through reduction of sodium borohydride; silver-coated silicon carbide is used as a filler to improve conductivity, retain hardness of silicon carbide, enhance wear resistance of the slurry and prolong service life; through the synergistic effect of the modified carbon nanotubes, the modified graphene and the silver-coated silicon carbide, the paste shows excellent performance in the aspects of conductivity, thermal stability and mechanical strength.

The invention relates to the technical field of woven ceramic materials, in particular to a high-toughness woven ceramic material and a preparation method thereof, and the high-toughness woven ceramic material comprises the following raw materials in parts by weight: 30-40 parts of diopside, 20-30 parts of quartz, 10-15 parts of silicon carbide, 7-11 parts of boron nitride, 6-10 parts of a modified carbon nanotube reblended admixture, 5-7 parts of an intercalated synergistic supplement, 4-6 parts of aluminum oxide, 10-15 parts of water and 3-5 parts of a sodium dodecyl benzene sulfonate solution. According to the high-toughness woven ceramic material, the diopside is matched with the quartz, the silicon carbide, the boron nitride and the aluminum oxide raw materials, the blending and matching effects of the raw materials are optimized by improving the interfacial activity of the sodium dodecyl benzene sulfonate solution, and meanwhile, the added modified carbon nanotube reblended admixture and the intercalated synergistic supplement are used for carrying out coordination and synergistic effects, so that the high-toughness woven ceramic material is prepared. The durable usability of the product is enhanced, the fracture toughness of the product is excellent, the scrubbing-resistant and corrosion-resistant stability effects are remarkable, and the performance improvement effect of the product is remarkable.

The invention provides an all-silicon carbide double-sided heat dissipation module packaging method based on gradient thermal resistance optimization, and belongs to the technical field of electronic component packaging. Establishing a thermal resistance characteristic curve, and calculating a gradient thermal resistance vector to determine a heat flow path; constructing a heat dissipation temperature distribution matrix; obtaining thermal diffusion data; heat dissipation path thermal resistance is calculated by combining the thermal diffusion matrix and the temperature distribution matrix, and a thermal resistance sparse matrix is established and is dimensionally reduced into a thermal resistance low-dimensional matrix; calculating an optimal heat dissipation path parameter set; inputting the parameter set into a thermal resistance prediction deep attention network model for verification and fine tuning, and generating a final thermal resistance distribution scheme; a module structure and a material ratio are designed according to the scheme to form a sandwich structure; a silver paste sintering process is adopted to realize low thermal resistance connection and complete packaging, and the technical problems of non-uniform thermal resistance distribution and difficulty in optimizing a heat flow path in a double-sided heat dissipation structure of a silicon carbide power module in the prior art are solved.

The invention discloses a method for converting a waste wind power blade composite material into silicon carbide, which comprises the following steps: mixing waste wind power blade composite material powder with a conductive agent to obtain a mixture, the waste wind power blade composite material comprising a silicon element and a carbon element; and performing flash Joule heat treatment on the mixture to obtain the silicon carbide. According to the method, the waste wind power blade composite material powder does not need to be subjected to any pretreatment such as pyrolysis, the waste wind power blade composite material can be converted into the silicon carbide with the high additional value only through one-step flash Joule heat treatment in the presence of the conductive agent, and the process steps are simple; and meanwhile, the flash Joule heat treatment is an electric heating pulse rapid high-temperature treatment mode, so that the time consumption is very short, and the method is energy-saving, efficient and environment-friendly.