7588 results about "Carbide silicon" patented technology

The invention relates to the technical field of deep learning, in particular to a stress distribution monitoring and crack risk prediction method for a silicon carbide part, which realizes comprehensive sensing of the stress state of the silicon carbide part, accurate positioning of a risk area and advanced early warning of a crack fault. The method comprises the following steps: synchronously acquiring multi-modal data through multiple types of sensors, and realizing cross-modal time sequence synchronization through feature alignment; designing a crack risk multi-branch feature extraction module, and respectively extracting general depth features and risk features oriented to thermal stress mismatch, microcrack evolution and structural instability through a shared backbone network and a special branch network; constructing a stress nephogram generation and risk area positioning module based on a graph neural network, and realizing visual reasoning and risk area marking from discrete features to full-field stress distribution; and designing a crack risk comprehensive prediction module based on multi-dimensional risk feature fusion, fusing an instantaneous state and an evolution trend, outputting a multi-risk confidence vector and triggering graded early warning.

Crystal growth systems with a baffle are provided. In one example, a crystal growth system for growing crystalline material, the crystalline material including silicon carbide, includes a seed holder configured to hold a silicon carbide seed crystal. The seed crystal provides a growth surface for growth of the silicon carbide crystalline material. The system includes a crucible at least partially defining a crystal growth chamber. The system includes a source material. The system includes one or more baffles within the crystal growth chamber and spaced apart from the source material. The one or more baffles include one or more apertures defined through the one or more baffles. The baffle includes a long dimension that is non-perpendicular to the growth surface of the seed crystal.

The invention provides an additive manufacturing method of a short fiber reinforced ceramic composite aircraft engine swirler, which comprises the following manufacturing steps: performing interface preparation on the fiber surface to obtain composite powder, and mixing the powder with silicon carbide powder and resin to obtain mixed powder; carrying out selective laser sintering printing molding on the mixed powder to obtain a ceramic green body, and carrying out degreasing treatment to obtain an intermediate; performing two-step impregnation and cracking on the intermediate through a ceramic precursor and resin to obtain a preform 2, performing gas / liquid phase reaction sintering treatment on the preform 2 to obtain Cf / SiC ceramic, depositing silicon carbide on Cf / SiC through a chemical vapor infiltration method, and performing abrasive flow grinding and polishing to obtain a finished product. The short fiber reinforced silicon carbide powder precise printing forming swirler is achieved, fiber, silicon carbide and resin powder are subjected to composite granulation, fiber agglomeration is weakened, the powder density is increased, the cohesive force between carbon fibers is increased, and therefore the biscuit density is increased; and structure accurate forming and surface quality control of the swirler with the complex structure are facilitated.

The invention discloses a preparation process of an aluminum oxide ceramic material, which comprises the following steps: S1, pretreatment of aluminum oxide powder: taking alpha-Al2O3 powder as a raw material, adding a dispersion medium, carrying out ball milling, transferring into an ultrasonic dispersion machine, dispersing, and further carrying out vacuum drying to obtain pretreated aluminum oxide powder; s2, chemical activation treatment: weighing pretreated aluminum oxide, magnesium oxide, nano silicon dioxide, calcium oxide, zirconium dioxide, titanium dioxide and modified nano silicon carbide in parts by weight, mixing, sequentially adding a dispersing agent absolute ethyl alcohol and a KH550 silane coupling agent, stirring at a high speed, adding a polyvinyl alcohol binder, and continuously stirring to obtain ceramic slurry; s3, sieving the ceramic slurry, filling the ceramic slurry into a mold, and performing isostatic pressing to obtain a ceramic green body; and S4, putting the ceramic green body into a box-type sintering furnace, sintering step by step, and cooling to room temperature along with the furnace to obtain the aluminum oxide ceramic material. The prepared aluminum oxide ceramic material has high compactness, excellent dielectric strength and mechanical property, low energy consumption and great application potential.

The invention belongs to the technical field of silicon carbide single crystal materials, and particularly relates to a growth device of large-size silicon carbide single crystals and a preparation method of the silicon carbide single crystals, porous graphite cylinders are arranged in a powder area of the growth device of the large-size silicon carbide single crystals, and the porous graphite cylinders are distributed along the edge of the powder area to the center in a stepped mode. The height is gradually increased from the edge to the center; a plurality of layers of stacked graphite pore plates are arranged at the top of the powder area, the upper end parts of the porous graphite cylinders are flush with the upper surfaces of the corresponding layers of graphite pore plates, and the porous graphite cylinders penetrate through the graphite pore plates, so that a continuous gas phase transmission channel from the powder area to the crystal growth area is formed. According to the invention, the plurality of porous graphite cylinders are arranged in the silicon carbide raw material area in a stepped manner, so that the temperature field distribution of the raw material area is stabilized, the gas phase layout is optimized, impurities in gas phase components are filtered, and the defects of microtubes, inclusions, dislocation and the like in crystals are improved.

The invention relates to an additive manufacturing method and application of an aluminum-based silicon carbide composite material complex component, and the additive manufacturing method of the aluminum-based silicon carbide composite material complex component comprises the following steps: step 1, uniformly mixing silicon carbide powder and aluminum alloy powder, and drying; 2, establishing a structural model for the target part, and importing the structural model into selective laser melting forming equipment; thirdly, selective laser melting forming is conducted; fourthly, linear cutting and surface treatment are conducted; and fifthly, hot isostatic pressing treatment is conducted. The invention further provides application of the aluminum-based silicon carbide composite material complex component to precise structural components such as aviation structural components, guided missile and satellite components and optical instruments. According to the method, the problem of subsequent large-allowance removal of the aluminum-based silicon carbide composite material component is solved, the wettability between the aluminum alloy and the silicon carbide particles is improved, the mechanical property meets the application requirement, and the aluminum-based silicon carbide structural component with stable performance is obtained.

A silicon-carbon material, a preparation method therefor, a secondary battery, and an electric device. The silicon-carbon material comprises silicon-carbon composite particles; the silicon-carbon composite particles comprise a porous carbon material, nano-silicon grains and a silicon carbide material layer; the porous carbon material is provided with through pores, the nano-silicon grains are located in the through pores, and the silicon carbide material layer is partially located on through pore walls; the grain size of the nano-silicon grains is not smaller than the average pore diameter of the porous carbon material. The silicon-carbon material is used as an active material of a negative electrode sheet, thereby improving the cycle performance of batteries.

The invention provides an anti-corrosion ceramic sagger and a preparation method thereof.The anti-corrosion ceramic sagger comprises an aggregate layer and a matrix layer, and the aggregate layer is prepared from, by mass, 30-50 parts of yttrium-stabilized zirconia, 20-30 parts of silicon carbide and 15-25 parts of magnesium aluminate spinel; the matrix layer is prepared from the following raw materials in parts by mass: 40 to 50 parts of mullite micro powder, 30 to 40 parts of cordierite micro powder and 10 to 20 parts of binding agent. According to the anti-corrosion ceramic sagger and the preparation method thereof, by optimizing the raw material ratio and the preparation process, the corrosion depth is smaller than or equal to 0.19 mm after the sagger is soaked in the molten salt environment at 900 DEG C for 72 h, the service life is prolonged by 6-8 times compared with that of a traditional corundum sagger, and the anti-corrosion ceramic sagger has wide application prospects.

The invention discloses a high-entropy oxide for synergic nitrogen removal and catalysis as well as a preparation method and application thereof, and belongs to the technical field of material preparation, the high-entropy oxide is a single solid solution phase formed by five or more metal elements of Fe, Co, Ni, Cu, Mn, Ti and Ce and an oxygen element, the configuration entropy of the high-entropy oxide is greater than or equal to 1.5 R, R is a gas constant, and R is an oxygen constant. The mole fraction of each metal element is 0.1-0.3, and the sum of the mole fractions of the metal elements is 1. According to the high-entropy oxide with the synergistic nitrogen removal and catalysis effects and the preparation method and application thereof, a synergistic catalysis system is constructed through the high-entropy oxide and silicon carbide, and the high-entropy oxide has the multiple advantages of being high in nitrogen removal efficiency, high in stability, simple in process, environmentally friendly and wide in application range; the removal rate of total nitrogen and key nitrogen pollutants can reach 90% or above in the seawater high-salt environment, and the environment-friendly emission requirement is met.

The invention relates to the technical field of liquid cooling heat dissipation, in particular to a liquid cooling fin type heat dissipation structure for a processor and a manufacturing method.The liquid cooling fin type heat dissipation structure comprises a composite fin unit, a nano-porous thermal interface layer and a double-phase cooling runner, and the composite fin unit is composed of a plurality of heat dissipation fins; the heat dissipation fins are made of a silicon carbide particle reinforced copper-based double-gradient nano-structure composite material; the nano-porous thermal interface layer is arranged on the outer surface of the heat dissipation fins; the double-phase cooling flow channel is arranged in the heat dissipation fins and comprises a main cooling channel, a micro-jet branch pipe and a spiral fractal flow channel. According to the double-phase cooling flow channel, the main cooling channel, the micro-jet branch pipes and the spiral fractal flow channel are matched with one another, the main cooling channel extends in the length direction of the fins, it is ensured that cooling liquid can evenly flow in the fins, the contact area of the cooling liquid and the fins is increased, and the cooling efficiency is improved.

The invention provides a device for inhibiting drain-source overvoltage and overcurrent through active gate drive of a silicon carbide MOSFET (Metal-Oxide-Semiconductor Field Effect Transistor), aiming at solving the problem of voltage or current overshoot caused by circuit parasitic parameters in a high-speed switching process of the SiC MOSFET and simultaneously considering the switching speed and energy loss balance. According to the device, drain-source voltage vdc and direct-current bus voltage of the SiC MOSFET are collected to serve as feedback signals, and gate driving voltage and equivalent gate resistance are dynamically adjusted; in a key stage (a Miller plateau switching-on period and a voltage rising period switching-off period) of a switch transient state, a gate resistance network is switched through a logic control circuit, and suppression of drain current overshoot and drain-source voltage overshoot is realized. Simulation verification shows that the device can reduce voltage overshoot by 20%-30% and current overshoot by 25%-60%, only a single voltage feedback channel is needed, the cost is obviously lower than that of a traditional multi-signal acquisition active gate driving scheme, and the device is suitable for a high-efficiency SiC MOSFET power converter.

The invention relates to a super junction power device and a preparation method thereof. The preparation method comprises the following steps: providing a silicon carbide substrate; a silicon carbide epitaxial layer is formed on the top surface of the silicon carbide substrate, the silicon carbide epitaxial layer has first type impurity ions, a plurality of doped columns are formed in the silicon carbide epitaxial layer, the doped columns have second type impurity ions, and the doped columns are formed through an etching process and an epitaxial process or through a multi-step epitaxial process and a multi-step ion implantation process; forming a body region in the surface, far away from the silicon carbide substrate, of the silicon carbide epitaxial layer, wherein the body region has second type impurity ions; forming a source region between the doped columns, wherein the source region is provided with a first type of foreign ions; forming a first groove penetrating through the source region and the body region between the adjacent doped columns, and forming a second groove penetrating through the body region above the doped columns; forming a gate structure in the first groove; and forming a source trench structure in the second trench. The on resistance of the super junction power device is reduced, and the voltage withstanding characteristic of the super junction power device is improved.

Disclosed in the present application are a silicon carbide MOSFET device and a manufacturing method therefor. The silicon carbide MOSFET is provided with a first withstand voltage masking structure and a second withstand voltage masking structure. The withstand voltage performance of the device is improved, the breakdown problem of a gate insulating dielectric layer can be avoided, the electrostatic effect of the device on a severe environment and the high-voltage peak tolerance capability in the circuit are improved, and the surge voltage resistance of the device and the over-voltage protection capability are improved. Ion implantation can be carried out on a first trench to form the first withstand voltage masking structure, and ion implantation can be carried out on a second trench to form the second withstand voltage masking structure.

The invention discloses a tungsten alloy material containing a silicon carbide reinforced Al2O3-SiO2-based multiphase ceramic coating and a preparation method of the tungsten alloy material, and belongs to the field of ceramic material preparation. The method comprises the following steps: ball-milling and mixing powder raw materials containing modified silicon carbide, aluminum oxide, silicon dioxide and lead oxide with a solvent, and defoaming to obtain ceramic slurry; the ceramic slurry is brushed on the surface of a tungsten alloy matrix subjected to surface pretreatment, and after drying, vacuum sintering is performed to obtain the tungsten alloy. The compact silicon carbide reinforced Al2O3-SiO2-based multiphase ceramic coating is introduced to the surface of a tungsten alloy matrix, the hardness, the high-temperature oxidation resistance and the high-temperature carburization resistance of a tungsten alloy material are remarkably improved, the stability of the coating can be improved through the silicon carbide distributed in a dispersed point shape, the thermal expansion coefficient of the coating is evenly reduced, and the hardness, the high-temperature oxidation resistance and the high-temperature carburization resistance of the tungsten alloy material are improved. The thermal expansion coefficient difference value between the multiphase ceramic coating and a tungsten alloy matrix is reduced, and the thermal shock resistance of the coating is improved.

The invention relates to a modified chrome corundum ramming material and a preparation and construction process thereof, and belongs to the technical field of chrome corundum ramming materials. The ramming material comprises a material A, a material B and a material C, wherein the material A comprises chrome corundum aggregate, titanium dioxide coated aluminum oxide microspheres, calcium sulfide dehydrate and silicon carbide porous microspheres; the material B comprises chromium oxide-zirconium oxide composite nano powder, sodium thiosulfate pentahydrate, tricalcium phosphate and hexagonal boron nitride flaky crystals; and the material C comprises an aluminum dihydrogen phosphate-magnesium hydroxide compound, a calcium fluoride-aluminum oxide co-melt and a silane coupling agent. The preparation process comprises the steps of pretreatment of all the components, preparation of composite powder and layered preparation. The construction process comprises the steps of pretreatment, wet-process mixing, layered ramming, negative-pressure permeation, medium-temperature reaction, spraying curing, integral firing and the like. Generation of hexavalent chromium can be effectively inhibited, the thermal shock resistance, the mechanical strength and the heat-conducting property of the material are remarkably improved, and the material has the advantages of being good in environment friendliness, long in service life, excellent in construction performance and the like.

The invention discloses high-strength concrete and a preparation method thereof in the field of concrete. The high-strength concrete is prepared from the following raw materials in parts by weight: superfine sulphoaluminate cement; coarse aggregate; quartz sand; silica fume; coal ash; nano metakaolin; silicon carbide whiskers; a graphene oxide; a pH responsive microcapsule; coating the steel fibers with liquid metal; a carbon nanotube; and a polycarboxylic acid water reducer. Release of the repairing agent is accurately regulated and controlled by adopting the pH response microcapsule, the interface performance is enhanced by combining with the liquid metal coating steel fiber, and the composite dispersion process of the nano material is optimized. Wherein the environment response efficiency of the microcapsule is remarkably improved through the collaborative design of a calcium oxide-slow release agent system and a methyl methacrylate / acrylic acid copolymerization shell layer; according to the gallium-based liquid metal coating, metallurgical bonding of fibers and a matrix is achieved through the low-melting-point characteristic, and traditional physical bonding limitation is broken through.

The invention relates to the technical field of coatings, in particular to a modified FEVE fluorocarbon resin coating and a preparation method thereof. The problem that the FEVE fluorocarbon coating is poor in durability is solved. The preparation method comprises the following steps: modifying FEVE fluorocarbon resin with linoleic acid to obtain a granular material; stirring the modified FEVE fluorocarbon resin, polyisocyanate, montmorillonite and a composite solvent to obtain a prepolymer; pre-dispersing and grinding silicon carbide, modified zinc oxide, a dispersing agent and a composite solvent, adding nano composite particles for ultrasonic dispersion, and adding a prepolymer and a flatting agent to obtain the modified FEVE fluorocarbon resin coating. Wherein the FEVE fluorocarbon resin is modified, so that the crosslinking speed, the coating strength and the adhesive force are improved, the stain resistance, the weather resistance and the corrosion resistance are improved through the nano composite particles and the like, and finally the durability of the FEVE fluorocarbon resin coating is improved.

The invention discloses a silicon carbide crystal ingot double-light-spot laser slicing method and device and application of the silicon carbide crystal ingot double-light-spot laser slicing method and device. The silicon carbide crystal ingot double-light-spot laser slicing method comprises the steps that a high-energy laser beam is split into two sub-laser beams, the two sub-laser beams are focused on a selected depth interface in a silicon carbide crystal ingot, and the energy density of light spots formed by focusing of the sub-laser beams is larger than an ablation threshold value of the silicon carbide crystal ingot; two spaced light spots are used for conducting multiple times of scanning machining on the silicon carbide crystal ingot, each time of scanning is conducted in the first direction, multiple times of scanning is conducted in the second direction, so that a modification and crack area is formed on a selected depth interface, the first direction is perpendicular to the second direction, and the second direction is perpendicular to the crystal direction of the silicon carbide crystal ingot; the bonding force of the modification and crack area of the silicon carbide crystal ingot is smaller than that of other areas, and the silicon carbide crystal ingot can be separated from the modification and crack area.

The invention belongs to the technical field of sole materials, and particularly discloses an anti-skid sole material and a preparation method thereof. The anti-skid sole material comprises a sole body, the sole body comprises an anti-skid layer and a rubber layer, and the anti-skid layer comprises the following raw material components in parts by weight; comprising 50-55 parts of polyurethane, 16-20 parts of a silicon carbide composite material, 10-14 parts of polyethylene composite fibers, 4-8 parts of a maleic anhydride grafted polyethylene octylene co-elastomer, 3-5 parts of a silane coupling agent, 1-2 parts of an antioxidant and 0.5-0.8 part of a lubricant. The anti-skid sole material prepared in the invention has excellent mechanical strength, skid resistance and wear resistance, and can provide protection for feet and prolong the service life of soles.

The present invention provides a method and apparatus for laser stripping a silicon carbide ingot. The method first transmits an ultrashort pulse laser beam through the first end face of the silicon carbide ingot and focuses it on a set depth layer of the ingot. A cavity-modified region and a crack-modified region are generated above the set depth layer, respectively, and scanned to form the cavity-modified layer and the crack-modified layer. A short pulse laser beam then transmits the second end face of the silicon carbide ingot and focuses it on the cavity-modified region. The beam scatters and propagates within the cavity-modified region, causing the heat from the short pulse laser beam to act on the cavity-modified region, causing cracks within the crack-modified region to grow laterally outward. Scanning is then performed to connect cracks within adjacent cavity-modified regions within the cavity-modified layer through lateral growth. This reduces the amount and length of cracks in the modified layer extending longitudinally along the silicon carbide ingot, increases the number and length of lateral crack growth, reduces cutting loss, and reduces waste.

The invention discloses a high-entropy alloy silicon carbide nanofiber composite material and a preparation method and application thereof, a high-entropy alloy is loaded on silicon carbide nanofibers, compared with a carbon fiber material carrier, SiC fibers can form a compact SiO2 protective layer in a high-temperature aerobic environment, further oxidation failure of the internal structure can be prevented, and the high-entropy alloy silicon carbide nanofiber composite material is prepared. And meanwhile, SiC also has relatively high high-temperature stability and weather resistance, so that the high-entropy alloy silicon carbide nanofiber composite material can stably work in an extreme high-temperature oxidation environment (such as a spacecraft thermal protection system and an engine tail gas pipeline) of over 1000 DEG C, and perfectly adapts to a high-temperature wave-absorbing scene.

The invention belongs to the technical field of radar stealth materials and high-temperature electromagnetic protection, and particularly relates to design and a preparation method of a high-temperature-resistant wave-absorbing material based on alumina fibers. According to the material, a high-temperature-resistant ceramic precursor serves as a base body, a reinforcing phase is formed by alternately stacking alumina fiber cloth and an alumina fiber web tire containing chopped silicon carbide fibers, and a three-dimensional reinforcing structure is formed through a needling technology; the chopped silicon carbide fibers are directionally distributed in the net tire in a non-uniform mode, an enhanced area array with the local geometric regular pattern is constructed, the size and the arrangement period change in a gradient mode in the thickness direction, a vertical dielectric gradient structure is formed in the material, and multi-path propagation, reflection and polarization loss of electromagnetic waves are improved; the surface of alumina fiber cloth is coated with a ceramic interface layer, so that the interface bonding strength and thermal stability are improved; the ceramic matrix is densified for multiple rounds, so that the structure is compact; the material has excellent electromagnetic absorption performance, heat resistance and mechanical strength, and is suitable for high-temperature electromagnetic environments such as aerospace, missile bay sections and the like.

The invention belongs to the technical field of single crystal growth equipment, and particularly relates to a seed crystal clamping assembly, in particular to a seed crystal pulling assembly, a silicon carbide single crystal growth device and a use method of the silicon carbide single crystal growth device. The seed crystal lifting assembly comprises a lifting rod and a lifting rod, a rotating head; wherein a cavity is formed in the wall body of the rotating head, and a groove is formed in the middle of the rotating head; and fan blades are fixedly arranged in the grooves. The fan blades are arranged in the rotating head, the unique airflow channel is designed, the lifting rod rotates to drive the fan blades to work, and forced airflow circulation is formed, so that the problem that the radial temperature difference of a crystal growth face is large is solved, back heat dissipation of seed crystals is remarkably improved, and the interface stability of crystal growth is improved. And meanwhile, the growth speed can be directly regulated and controlled in time by adjusting the rotating speed of the lifting rod, so that the growth efficiency and the crystal quality are synergistically improved.

The invention discloses a graphite piece silicon carbide coating and a preparation method thereof, and belongs to the technical field of inorganic non-metallic materials. The method comprises the following steps: firstly, carrying out surface polishing, cleaning and drying pretreatment on a graphite piece; then a solution containing phosphinazine functionalized silazane and a boron-silicon carlamide compound is adopted for spraying the pretreated graphite piece, drying and curing are conducted, and a surface modification layer is formed; and finally, placing the surface-modified graphite piece in chemical vapor deposition equipment, and depositing at specific temperature, pressure and atmosphere to form the silicon carbide coating. According to the method, uniform nucleation and crystallization of the silicon carbide coating are effectively promoted through unique surface modification treatment, and the compactness and uniformity of the coating and the binding force of the coating and a matrix are remarkably improved. The obtained coating graphite piece has excellent thermal corrosion resistance, oxidation resistance and mechanical property, the service life and the use frequency of the coating graphite piece in semiconductor epitaxial equipment are remarkably prolonged, the whole preparation process is environmentally friendly, and the coating graphite piece is suitable for coating treatment of a large graphite base material.

The invention discloses high-toughness ultrathin flexible glass and a preparation method thereof, and relates to the technical field of glass manufacturing. The ultrathin flexible glass is prepared from the following raw materials: silicon dioxide, aluminum oxide, lithium oxide, sodium oxide, magnesium oxide, a modified nano reinforced phase, a high-temperature melting regulator and cerium dioxide. The modified nano reinforced phase is prepared by the following steps: pre-treating silicon carbide and silicon nitride with hydrochloric acid, and mixing with nano zirconium oxide to obtain a mixture; and modifying the mixture with a silane coupling agent to obtain the modified nano reinforced phase. The high-temperature melting regulator is a mixture of lithium borate, sodium sulfate and lithium fluoride. The preparation method of the ultra-thin flexible glass comprises the following steps: preparing the modified nano reinforced phase, melting and homogenizing the glass, forming the glass substrate, and preparing the ultra-thin flexible glass. The ultra-thin flexible glass prepared by the invention has relatively high fracture toughness and structural rigidity, excellent flexibility and bending fatigue durability, and excellent thermal shock resistance.

The invention discloses an ultraviolet laser enhanced plasma electrolytic polishing method for an aluminum-based silicon carbide composite material, which is characterized in that the conductive performance of a reinforced phase SiC material is locally improved by utilizing the synergistic effect of the local thermal effect and the photoelectric effect of ultraviolet laser, and meanwhile, uniform-speed polishing of a metal aluminum matrix and the reinforced phase SiC material is achieved by virtue of plasma discharge. And the machining efficiency is obviously improved, a machined surface with higher quality compared with traditional machining and single plasma electrolytic polishing is obtained, and further application and popularization of the aluminum-based silicon carbide composite material are facilitated.

The invention discloses a light-moisture dual-curing underwater epoxy coating with a self-repairing function as well as a preparation method and a construction method of the light-moisture dual-curing underwater epoxy coating. The epoxy coating comprises a component A and a component B, wherein the mass ratio of the component A to the component B is (1.5-3.5): 1; the component A is prepared from the following raw materials: bisphenol F type epoxy resin, dynamic disulfide bond modified polysulfide rubber, boron nitride nanosheet and silicon carbide nanowire hybrid filler, a photoinitiator and a silane coupling agent; the component B is prepared from the following raw materials: moisture-cured polyether amine, a boric acid ester bond cross-linking agent and hydrophobic modified graphene oxide. According to the invention, a light-moisture dual-curing mechanism is adopted, ultraviolet irradiation initiates rapid surface curing, and then environmental moisture permeates to complete deep curing. The material provided by the invention has the advantages of rapid curing, excellent self-repairing function, significantly improved underwater adhesion and good thermal conductivity, and provides a new solution for rapid repairing and long-acting protection of underwater structures.

The invention discloses an iron alloy electrode paste and a preparation process, and belongs to the technical field of electrode paste preparation, the iron alloy electrode paste comprises a composite aggregate system and a composite binder system, the composite aggregate system comprises the following components by mass: 40-60% of anthracite aggregate, 15-25% of artificial graphite flake, and 3-8% of silicon carbide whisker; the composite binder system comprises the following components in percentage by mass: 70-80% of medium-temperature modified coal pitch, 10-15% of furan resin and 5-10% of dispersion liquid containing nano boron carbide, and the composite binder system is combined with the composite aggregate system through a gradient permeation process to form a three-dimensional conductive network and an enhanced interface; the composite aggregate system and the composite binder system are optimally proportioned, and gradient permeation and gradient kneading processes are combined, so that the comprehensive performance of the electrode paste is remarkably improved, the thermal shock resistance is greatly improved and the linear shrinkage rate is reduced while low resistivity is maintained, the electrode paste is suitable for smelting ferroalloys such as silicomanganese and ferrochromium, and the service life is remarkably prolonged.

A silicon carbide source material structure for use in a sublimation system for growing crystalline silicon carbide is provided. The silicon carbide source material structure includes a composite shaped solid. The composite shaped solid may be made by casting, extrusion, 3D printing, graphite conversion, or other suitable process.

The invention relates to the technical field, in particular to an ultralight foamed ceramic hollow sphere prepared from iron lepidolite tailings and a preparation method and application of the ultralight foamed ceramic hollow sphere. The foamed ceramic hollow sphere is prepared from the following raw materials: iron lepidolite tailings, silicon carbide, bentonite, sodium carbonate and potassium carbonate; in percentage by mass, the content of the iron lepidolite tailings is 90 to 96.4 percent; the content of the silicon carbide is 0.1-1%; the iron lepidolite tailings are prepared from the following components in percentage by mass: 77 to 80 percent of SiO2, 10 to 13 percent of Al2O3, 1.3 to 1.6 percent of Fe2O3 and 0.1 to 0.17 percent of Li2O. The ultralight foamed ceramic hollow sphere is prepared by using the iron lepidolite tailings, the silicon carbide, the bentonite, the sodium carbonate and the potassium carbonate as raw materials, can meet various market requirements of heat preservation, heat insulation, sound insulation, noise reduction and the like, and brings remarkable economic benefits and social benefits.