70383 results about "Inorganic chemistry" patented technology

An organometallic complex and an organic light-emitting element containing the complex which has a very high efficiency, a high luminance, and durability. The organic light-emitting element has an anode, a cathode, and a layer including an organic compound sandwiched between the anode and cathode. The layer containing the organic compound includes at least one organometallic complex represented by General Formula [I] below.

Embodiments of the invention provide methods for depositing dielectric materials on substrates during vapor deposition processes, such as atomic layer deposition (ALD). In one example, a method includes sequentially exposing a substrate to a hafnium precursor and an oxidizing gas to deposit a hafnium oxide material thereon. In another example, a hafnium silicate material is deposited by sequentially exposing a substrate to the oxidizing gas and a process gas containing a hafnium precursor and a silicon precursor. The oxidizing gas usually contains water vapor formed by flowing a hydrogen source gas and an oxygen source gas through a water vapor generator. In another example, a method includes sequentially exposing a substrate to the oxidizing gas and at least one precursor to deposit hafnium oxide, zirconium oxide, lanthanum oxide, tantalum oxide, titanium oxide, aluminum oxide, silicon oxide, aluminates thereof, silicates thereof, derivatives thereof or combinations thereof.

Methods are described for forming and treating a flowable silicon-carbon-and-nitrogen-containing layer on a semiconductor substrate. The silicon and carbon constituents may come from a silicon-and-carbon-containing precursor while the nitrogen may come from a nitrogen-containing precursor that has been activated to speed the reaction of the nitrogen with the silicon-and-carbon-containing precursor at lower deposition temperatures. The initially-flowable silicon-carbon-and-nitrogen-containing layer is ion implanted to increase etch tolerance, prevent shrinkage, adjust film tension and/or adjust electrical characteristics. Ion implantation may also remove components which enabled the flowability, but are no longer needed after deposition. Some treatments using ion implantation have been found to decrease the evolution of properties of the film upon exposure to atmosphere.

A process for fabricating a semiconductor device having a high-K dielectric layer over a silicon substrate, including steps of growing on the silicon substrate an interfacial layer of a silicon-containing dielectric material; and depositing on the interfacial layer a layer comprising at least one high-K dielectric material, in which the interfacial layer is grown by laser excitation of the silicon substrate in the presence of oxygen, nitrous oxide, nitric oxide, ammonia or a mixture of two or more thereof. In one embodiment, the silicon-containing material is silicon dioxide, silicon nitride, silicon oxynitride or a mixture thereof.

The present invention provides a transition metal complex compound of a specific structure having a metal carbene bond, a production process for the same and an organic EL device in which an organic thin film layer comprising a single layer or plural layers having at least a luminescent layer is interposed between an anode and a cathode, wherein at least one layer in the above organic thin film layers contains the transition metal complex compound having a metal carbene bond described above. Provided are a novel transition metal complex compound having a metal carbene bond which has an electroluminescent characteristic and which can provide an organic electroluminescent device having a high luminous efficiency and a production process for a transition metal complex compound.

A method for packing a solid organometallic compound into a container for packing the compound is provided, wherein the solid organometallic compound can be stably supplied to a vapor phase epitaxial growth apparatus such as an MOCVD apparatus at a constant concentration for a long period of time. In the method for packing a solid organometallic compound into a container for packing, the compound is composed of grains having a grain size of 8 mm or less and the grains of the compound essentially comprise grains having a grain size of 2.5 to 6 mm.

A high-k silicate atomic layer deposition method is disclosed. To produce a hafnium silicate layer, a substrate may be exposed to a pulse of a hafnium precursor, a pulse of an oxidizer, a pulse of a silicon precursor, and a pulse of another oxidizer. A catalyst may additionally be co-flowed with one or more reactants into the chamber through a separate inlet. Alternatively, the catalyst may be flowed to the chamber before the reactant is introduced in a soaking procedure. By either co-flowing the catalyst through separate inlets or by performing a catalyst soak, hafnium silicate formation may proceed at a fast rate and/or at a low temperature.

A novel method of forming catalyst particles, on which carbon nanotubes grow based, on a substrate with increased uniformity, and a method of synthesizing carbon nanotubes having improved uniformity are provided. A catalytic metal precursor solution is applied to a substrate. The applied catalytic metal precursor solution is freeze-dried, and then reduced to catalytic metal. The method of forming catalyst particles can minimize agglomeration and/or recrystallization of catalyst particles when forming the catalyst particles by freeze-drying the catalyst metal precursor solution. The catalyst particles formed by the method has a very uniform particle size and are very uniformly distributed on the substrate.

An exemplary apparatus and method of forming a ruthenium tetroxide containing gas to form a ruthenium containing layer on a surface of a substrate is described herein. The method and apparatus described herein may be especially useful for fabricating electronic devices that are formed on a surface of the substrate or wafer. Generally, the method includes exposing a surface of a substrate to a ruthenium tetroxide vapor to form a catalytic layer on the surface of a substrate and then filling the device structures by an electroless, electroplating, physical vapor deposition (PVD), chemical vapor deposition (CVD), plasma enhanced CVD (PECVD), atomic layer deposition (ALD) or plasma enhanced ALD (PE-ALD) processes. In one embodiment, the ruthenium containing layer is formed on a surface of a substrate by creating ruthenium tetroxide in an external vessel and then delivering the generated ruthenium tetroxide gas to a surface of a temperature controlled substrate positioned in a processing chamber. In one embodiment, a ruthenium tetroxide containing solvent formation process is used to form ruthenium tetroxide using a ruthenium tetroxide containing source material. In one embodiment, of a ruthenium containing layer is formed on a surface of a substrate, using the ruthenium tetroxide containing solvent. In another embodiment, the solvent is separated from the ruthenium tetroxide containing solvent mixture and the remaining ruthenium tetroxide is used to form a ruthenium containing layer on the surface of a substrate.

A method for preparing a functionalized polymer comprising the steps of preparing a pseudo-living polymer by polymerizing conjugated diene monomer with a lanthanide-based catalyst, where said pseudo-living polymer is characterized by having greater than about 85 percent of the polymer in the cis microstructure and less than about 3 percent of the polymer is in the 1,2- or 3,4-microstructure, and reacting the pseudo-living polymer with at least one functionalizing agent defined by the formula (I) or (II)

where Z is a substituent that will react or interact with organic or inorganic fillers; R¹ is a single bond or a divalent organic group; R² is a monovalent organic group or a divalent organic group that forms a cyclic organic group with R¹³ or R¹⁴; R³ is a single bond, a divalent organic group, or a trivalent organic group that forms a cyclic organic group with R⁴ or R⁵; R¹³ is a single bond, a divalent organic group, or a trivalent organic group that forms a cyclic organic group with R² or R¹⁴; R⁴ is a monovalent organic group or a divalent organic group that forms a cyclic organic group with R³ or R⁵; R¹⁴ is a monovalent organic group or a divalent organic group that forms a cyclic organic group with R² or R¹³; and R⁵ is a monovalent organic group or a divalent organic group that forms a cyclic organic group with R³ or R⁴; with the proviso that each group attached to the imino carbon is attached via a carbon atom and R¹, R², R³, R⁴, R⁵, R¹³, R¹⁴ and Z are substituents that will not protonate a pseudo-living polymer.

A process for the selective production of ethanol by vapor phase reaction of acetic acid over a hydrogenating catalyst composition to form ethanol is disclosed and claimed. In an embodiment of this invention reaction of acetic acid and hydrogen over a platinum and tin supported on silica, graphite, calcium silicate or silica-alumina selectively produces ethanol in a vapor phase at a temperature of about 250° C.

An oxide or nitride film containing carbon and at least one of silicon and metal is formed by ALD conducting one or more process cycles, each process cycle including: feeding a first precursor in a pulse to adsorb the first precursor on a substrate; feeding a second precursor in a pulse to adsorb the second precursor on the substrate; and forming a monolayer constituting an oxide or nitride film containing carbon and at least one of silicon and metal on the substrate by undergoing ligand substitution reaction between first and second functional groups included in the first and second precursors adsorbed on the substrate. The ligand may be a halogen group, —NR₂, or —OR.

Methods for processing a substrate are described herein. Methods can include positioning a substrate in a processing chamber, maintaining the processing chamber at a temperature below 400° C., flowing a reactant gas comprising either a silicon hydride or a silicon halide and an oxidizing precursor into the process chamber, applying a microwave power to create a microwave plasma from the reactant gas, and depositing a silicon oxide layer on at least a portion of the exposed surface of a substrate.

A process for selective formation of ethanol from acetic acid includes contacting a feed stream containing acetic acid and hydrogen at an elevated temperature with catalyst comprising platinum and tin on a high surface area silica promoted with calcium metasilicate. Selectivities to ethanol of over 85% are achieved at 280° C. with catalyst life in the hundreds of hours.

A method for forming a SiN or SiCN film in a trench on a substrate by plasma-enhanced atomic layer deposition (PEALD) conducts one or more process cycles, each process cycle including: (i) feeding a precursor in a pulse to a reaction space where the substrate is place, said precursor having a Si—N—Si bond in its skeletal structure to which at least one halogen group is attached; and (ii) applying RF power to the reaction space in the presence of a reactant gas and in the absence of any precursor to form a monolayer constituting a SiN or SiCN film.

A method of etching exposed silicon-and-nitrogen-containing material on patterned heterogeneous structures is described and includes a remote plasma etch formed from a fluorine-containing precursor and an oxygen-containing precursor. Plasma effluents from the remote plasma are flowed into a substrate processing region where the plasma effluents react with the exposed regions of silicon-and-nitrogen-containing material. The plasmas effluents react with the patterned heterogeneous structures to selectively remove silicon-and-nitrogen-containing material from the exposed silicon-and-nitrogen-containing material regions while very slowly removing other exposed materials. The silicon-and-nitrogen-containing material selectivity results partly from the presence of an ion suppression element positioned between the remote plasma and the substrate processing region. The ion suppression element reduces or substantially eliminates the number of ionically-charged species that reach the substrate. The methods may be used to selectively remove silicon-and-nitrogen-containing material at more than twenty times the rate of silicon oxide.

Methods and compositions for depositing a film on one or more substrates include providing a reactor and at least one substrate disposed in the reactor. At least one lanthanide precursor is provided in vapor form and a lanthanide thin film layer is deposited onto the substrate.

Transition metal precursors are disclosed herein along with methods of using these precursors to deposit metal thin films. Advantageous properties of these precursors and methods are also disclosed, as well as superior films that can be achieved with the precursors and methods.

Apparatus and method for generating ruthenium tetraoxide in situ for use in vapor deposition, e.g., atomic layer deposition (ALD), of ruthenium-containing films on microelectronic device substrates. The ruthenium tetraoxide can be generated on demand by reaction of ruthenium or ruthenium dioxide with an oxic gas such as oxygen or ozone. In one implementation, ruthenium tetraoxide thus generated is utilized with a strontium organometallic precursor for atomic layer deposition of strontium ruthenate films of extremely high smoothness and purity.

A method of modifying the surface of carbon materials such as vapor grown carbon nanofibers is provided in which silicon is deposited on vapor grown carbon nanofibers using a chemical vapor deposition process. The resulting silicon-carbon alloy may be used as an anode in a rechargeable lithium ion battery.

Emissive phosphorescent organometallic compounds are described that produce improved electroluminescence, particularly in the blue region of the visible spectrum. Organic light emitting devices employing such emissive phosphorescent organometallic compounds are also described. Also described is an organic light emitting layer including a host material having a lowest triplet excited state having a decay rate of less than about 1 per second; a guest material dispersed in the host material, the guest material having a lowest triplet excited state having a radiative decay rate of greater than about 1×10⁵ or about 1×10⁶ per second and wherein the energy level of the lowest triplet excited state of the host material is lower than the energy level of the lowest triplet excited state of the guest material.

Apparatus and method for cleaning air. An air cleaner includes a housing that defines an airflow pathway and a catalytic reactor having a catalyst secured on a porous substrate that is disposed transverse to the airflow pathway. Preferably, the catalyst includes a light activated oxidizing photocatalyst or a thermally activated oxidizing catalyst. A photocatalytic reactor will include a light source directed at a light activated oxidizing photocatalyst, such as TiO₂ particles or a binary oxide particle species, which is disposed on the porous substrate. Most preferably, a metal catalyst is disposed on the photocatalyst particles at a concentration or loading between about 0.01 wt % and about 5 wt %. The air cleaner may further comprise an adsorption matrix upstream of the catalytic reactor, optionally in combination with a heater. A particulate filter and/or an electrostatic precipitator may also be disposed upstream of the adsorption matrix and the catalytic reactor.

Described herein are precursors and methods for forming silicon-containing films. In one aspect, the precursor comprises a compound represented by one of following Formulae A through E below:

In one particular embodiment, the organoaminosilane precursors are effective for a low temperature (e.g., 350° C. or less), atomic layer deposition (ALD) or plasma enhanced atomic layer deposition (PEALD) of a silicon-containing film. In addition, described herein is a composition comprising an organoaminosilane described herein wherein the organoaminosilane is substantially free of at least one selected from the amines, halides (e.g., Cl, F, I, Br), higher molecular weight species, and trace metals.

A heat-sensitive negative-working lithographic printing plate precursor includes on a grained and anodized aluminum support a coating including hydrophobic thermoplastic polymer particles, a hydrophilic binder, and an organic compound, wherein the organic compound includes at least one phosphonic acid group or at least one phosphoric acid group or a salt thereof.

A single source precursor for depositing ternary I-III-VI₂ chalcopyrite materials useful as semiconductors. The single source precursor has the I-III-VI₂ stoichiometry “built into” a single precursor molecular structure which degrades on heating or pyrolysis to yield the desired I-III-VI₂ ternary chalcopyrite. The single source precursors effectively degrade to yield the ternary chalcopyrite at low temperature, e.g. below 500° C., and are useful to deposit thin film ternary chalcopyrite layers via a spray CVD technique. The ternary single source precursors according to the invention can be used to provide nanocrystallite structures useful as quantum dots. A method of making the ternary single source precursors is also provided.

Disclosed is a process that relates to the recovery of a metal catalyst from an oxidizer purge stream produced in the synthesis of carboxylic acid, typically terephthalic acid. The process involves the addition of a wash solution to a high temperature molten dispersion to recover the metal catalyst and then subjecting an aqueous mixture or purified aqueous mixture so formed to a single stage extraction to remove organic impurities to produce an extract stream and a raffinate stream comprising the metal catalyst.

In an electrode structure for a lithium secondary battery including: a main active material layer formed from a metal powder selected from silicon, tin and an alloy thereof that can store and discharge and capable of lithium by electrochemical reaction, and a binder of an organic polymer; and a current collector, wherein the main active material layer is formed at least by a powder of a support material for supporting the electron conduction of the main active material layer in addition to the metal powder and the powder of the support material are particles having a spherical, pseudo-spherical or pillar shape with an average particle size of 0.3 to 1.35 times the thickness of the main active material layer. The support material is one or more materials selected from a group consisting of graphite, oxides of transition metals and metals that do not electrochemically form alloy with lithium. Organic polymer compounded with a conductive polymer is used for the binder. There are provided an electrode structure for a lithium secondary battery having a high capacity and a long lifetime, and a lithium secondary battery using the electrode structure and having a high capacity, a high energy density and a long lifetime.

A method for selectively depositing an amorphous silicon film on a substrate comprising a metallic nitride surface and a metallic oxide surface is disclosed. The method may include; providing a substrate within a reaction chamber, heating the substrate to a deposition temperature, contacting the substrate with silicon iodide precursor, and selectively depositing the amorphous silicon film on the metallic nitride surface relative to the metallic oxide surface. Semiconductor device structures including an amorphous silicon film deposited by selective deposition methods are also disclosed.

A method for forming ultraviolet (UV) radiation responsive metal-oxide containing film is disclosed. The method may include, depositing an UV radiation responsive metal oxide-containing film over a substrate by, heating the substrate to a deposition temperature of less than 400° C., contacting the substrate with a first vapor phase reactant comprising a metal component, a hydrogen component, and a carbon component, and contacting the substrate with a second vapor phase reactant comprising an oxygen containing precursor, wherein regions of the UV radiation responsive metal oxide-containing film have a first etch rate after UV irradiation and regions of the UV radiation responsive metal oxide-containing film not irradiated with UV radiation have a second etch rate, wherein the second etch rate is different from the first etch rate.

A method of removing a portion of an oxide layer includes forming first byproducts by reacting a reaction gas with the oxide layer, the reaction gas including fluorine and nitrogen, reacting the reaction gas with the first byproducts to form second byproducts, and removing the second byproducts.