137 results about "Ir element" patented technology

The invention discloses a wafer cleaning liquid concentration dynamic monitoring system, and belongs to the technical field of semiconductor manufacturing. Aiming at the problems of large single parameter measurement error, poor equipment adaptability and frequent maintenance in the prior art, the invention provides a multi-physics field fusion detection scheme: acquiring ion concentration characteristics through a multi-frequency conductivity detection module (0.1 kHz to 10MHz), eliminating environmental interference in combination with a temperature-viscosity joint compensation module, and calculating the concentration of the ion in the multi-frequency conductivity detection module. An optical refractive index auxiliary verification module is used to realize cross verification, and a CNN-LSTM fusion model optimized by transfer learning is used to improve cross-device prediction precision. According to the innovativeness of the system, an anti-corrosion annular electrode array (titanium alloy iridium-plated) supports dynamic distance adjustment and pulse self-cleaning, an ultrasonic defoaming unit (1-3 MHz frequency self-adaption) restrains bubble interference, and a self-calibration module triggers online maintenance based on the conditions of the electrode impedance change rate (larger than or equal to 5%), temperature fluctuation and the like. Experiments show that the concentration measurement precision is improved to + / -0.5%, the HF / O3 rate ratio is controlled to be (1: 2.5 + / -0.3), the number of residual particles on the surface of the wafer is smaller than or equal to 5 per square inch, the service life of the electrode is prolonged to 8 months, and the yield is improved by 0.6%. The method is suitable for a wafer production line of 12 inches and above, and has the advantages of high precision, strong anti-interference and low maintenance cost.

The invention belongs to the technical field of organic photoelectric materials, and discloses an organic metal iridium complex light-emitting material and an organic electroluminescent device.According to the organic metal iridium complex light-emitting material, after triphenylsilyl is connected into a ligand of Lb, due to the fact that the triphenylsilyl has the large steric hindrance effect and the hyperconjugation effect, the light-emitting effect of the organic metal iridium complex light-emitting material is improved; therefore, the electron distribution can be regulated and controlled, the excited state can be stabilized, the stability of the material is enhanced, and the properties of high luminous efficiency and long service life are obtained. Meanwhile, by introducing other substituents into La and Lb ligands, the wavelength and electron distribution of the organic metal iridium complex material are further adjusted, so that the driving voltage of the organic electroluminescent device prepared when the organic metal iridium complex is used as a luminescent layer doping material is obviously reduced, the luminous efficiency is obviously improved, and the service life is obviously prolonged.

The invention discloses a manganese-doped Ir-Ta oxide composite coating titanium anode and a preparation method thereof. The titanium anode comprises an insoluble titanium base material, an oxide middle layer and an oxide catalyst layer which are sequentially arranged, wherein the oxide catalyst layer is composed of an iridium (Ir) oxide, a tantalum (Ta) oxide and a doped manganese (Mn) element. The preparation method comprises the following steps: carrying out sand blasting and surface treatment on a titanium substrate to increase the roughness and binding force of the surface, then carrying out proper intermediate layer coating on the surface of the substrate, and finally preparing the manganese-doped Ir-Ta oxide composite coating on the surface of the intermediate layer. Compared with a traditional titanium anode, the prepared manganese-doped Ir-Ta oxide composite coating titanium anode has the advantages of being higher in reaction specific surface area, lower in oxygen evolution potential, longer in catalytic life and the like, and meanwhile the transition metal element manganese is higher in reserve, lower in price and high in oxygen evolution activity.

The invention discloses a miniaturized low-profile flexible ocean galvanic couple type pH sensor and a preparation method thereof, and aims to solve the problems of large profile thickness and insufficient reliability of the conventional flexible pH sensor. A working electrode system and a reference electrode system in the miniaturized low-profile flexible ocean galvanic couple pH sensor are arranged on a flexible polyimide substrate, and the working electrode system comprises an iridium oxide working electrode, a first metal conduction circuit layer and a first metal bonding pad; the iridium oxide working electrode is connected with the first metal bonding pad through the first metal conduction circuit layer, the reference electrode system comprises a reference electrode, a second metal conduction circuit layer and a second metal bonding pad, and the reference electrode is connected with the second metal bonding pad through the second metal conduction circuit layer. The pH response performance is remarkably improved by utilizing the nanocrystalline iridium oxide sensing layer, the sensitivity reaches 72.76 mV / pH, and 16.84 s quick response is realized in a 3m / s high-flow-speed marine environment.

A catheter system (100) for treating a treatment site (106) within or adjacent to a blood vessel (108) includes a power source (124), a light guide (122) and a plasma target (242). In various embodiments, the light guide (122) receives power from the power source (124). The light guide (122) has a distal tip (244), and the light guide (122) emits light energy (243) in a direction away from the distal tip (244). The plasma target (242) is spaced apart from the distal tip (244) of the light guide (122) by a target gap distance (245). The plasma target (242) is configured to receive light energy (243) from the light guide (122) so that a plasma bubble (234) is generated at the plasma target (242). The power source (124) can be a laser and the light guide (122) can be an optical fiber. The catheter system (100) can also an inflatable balloon (104) that encircles the distal tip (244) of the light guide (122). The plasma target (242) can be positioned within the inflatable balloon (104). The plasma target (242) can have a target face (1672) that receives the light energy (243) from the light guide (122). The plasma target (242) can be formed from one or more of tungsten, tantalum, platinum, molybdenum, niobium, iridium, magnesium oxide, beryllium oxide, tungsten carbide, titanium nitride, titanium carbonitride and titanium carbide.

A catheter system (100) for treating a treatment site (106) within or adjacent to a blood vessel (108) includes a power source (124), a light guide (122) and a plasma target (242). In various embodiments, the light guide (122) receives power from the power source (124). The light guide (122) has a distal tip (244), and the light guide (122) emits light energy (243) in a direction away from the distal tip (244). The plasma target (242) is spaced apart from the distal tip (244) of the light guide (122) by a target gap distance (245). The plasma target (242) is configured to receive light energy (243) from the light guide (122) so that a plasma bubble (234) is generated at the plasma target (242). The power source (124) can be a laser and the light guide (122) can be an optical fiber. The catheter system (100) can also an inflatable balloon (104) that encircles the distal tip (244) of the light guide (122). The plasma target (242) can be positioned within the inflatable balloon (104). The plasma target (242) can have a target face (1672) that receives the light energy (243) from the light guide (122). The plasma target (242) can be formed from one or more of tungsten, tantalum, platinum, molybdenum, niobium, iridium, magnesium oxide, beryllium oxide, tungsten carbide, titanium nitride, titanium carbonitride and titanium carbide.

The invention relates to an IrO2-Ta2O5 titanium anode coating based on graphene doping and temperature programming sintering synergistic enhancement and a preparation method of the IrO2-Ta2O5 titanium anode coating, and belongs to the technical field of electrode material preparation. According to the method, graphene is doped in an IrO2-Ta2O5 coating, the content of the graphene is controlled to be 0.2-0.8 mg / mL, preferably 0.6 mg / mL, the content of iridium is 26 g / m, and a 200-500 DEG C temperature programming sintering process is adopted. By optimizing the graphene dispersing and sintering process, the conductivity, the electrocatalytic activity and the structural stability of the coating are remarkably improved. Experimental results show that the coating has lower charge transfer resistance and higher electric double layer capacitance and oxygen evolution reaction activity, and the strengthening life of the coating exceeds 1100 hours and is far longer than that of a traditional titanium anode coating. The method is suitable for high-requirement electrochemical scenes such as electrolytic copper foil and chlor-alkali industry, and has a good industrial popularization prospect.

The present invention discloses an iridium complex and an organic light-emitting device, belonging to the field of display technology. The chemical structure of the iridium complex is as follows: #imgabs0#p≥0, R m represents a first substituent, wherein the first substituent is selected from at least one of halogen, -CF3, -CN, substituted or unsubstituted C1-C6 alkyl; q≥0, R n represents a second substituent selected from at least one of halogen, -CF3, -CN, substituted or unsubstituted C1-C6 alkyl; t≥0, R a represents a third substituent, wherein the third substituent is selected from one of fluorine, -CF3, and -CN. When the iridium complex is used as a red light dopant, it not only more effectively improves the luminous efficiency and luminous lifetime, but also has stronger thermal stability.

The invention relates to an X-beam collimator for a crystal diffraction experiment. A main body of the X-beam collimator is of a stepped structure comprising an upper end thin part and a lower end thick part; the fixing hole is formed in the upper end thin part of the main body and is fixedly connected with an external driving motor to drive the main body to move; the loading hole is formed in the thick part of the lower end of the main body and is a cylindrical blind hole; the light beam control piece is of a cylindrical structure and is made of platinum iridium alloy, a small round hole is formed in the center of the light beam control piece, and the light beam control piece is installed in the loading hole in a matched mode. The light-transmitting hole is formed in the bottom of the loading hole, the axis of the light-transmitting hole is collinear with the light path axis of the coaxial microscope and the diffractometer, and the light-transmitting hole is used for allowing the X beams screened by the small hole to pass through. The fixing holes are fixedly connected with the motor, so that the motor can drive the main body to move; light beam control sheets with different light beam size control capabilities are loaded through the loading holes; the X-ray beam passes through the collimator through the light hole, the structure is simple, the size and the mass are small, and rapid collimation and size control of the X-ray beam can be achieved.

To provide a printed circuit board including a conductor pattern in which delamination hardly occurs when etching a seed metal layer for plating, and such a conductor pattern includes a plurality of fine patterns.SOLUTION: And a conductor pattern including a pattern metal layer disposed on the seed metal layer, wherein the seed metal layer includes a first metal layer including a first metal and a second metal layer disposed on the first metal layer, connected to the pattern metal layer, and including a second metal, and a thickness of the first metal layer is greater than a thickness of the second metal layer, the first metal may be any one selected from the group consisting of aluminum (Al), iridium (Ir), molybdenum (Mo), tungsten (W), cobalt (Co), nickel (Ni), and ruthenium (Ru).SELECTED DRAWING: Figure 3

The application relates to the technical field of electronic materials, and discloses a fluorinated iridium complex, a preparation method and application thereof, and an organic photoelectric device. The fluorinated iridium complex has a structure shown in formula (I): R 1 is a C1-C13 alkyl substituent, R 2 is a C1-C13 alkyl substituent, and the substitution sites are the meta and para positions of a carbon atom of an isoquinoline phenyl linkage, X is an independently existing hydrogen atom, a fluorine atom or an alkyl substituent, wherein the alkyl substituent is a deuterated, partially deuterated or aryl-substituted alkyl group; the fluorinated iridium complex realizes high-efficiency supersaturation deep red light as a red phosphor material in an organic light-emitting device.

The invention is suitable for the field of hot cathode ionization vacuum gauge filament life prediction and monitoring, and provides a novel ionization vacuum gauge hot cathode filament damage state monitoring device and method, and the device comprises a damage device and a state monitoring device. The damage device comprises a hand-cranking digital display sliding table, a first flange nut, a second flange nut, a third flange nut, a fourth flange nut, a short pressing plate, a first screw rod, a second screw rod, an iridium-yttrium oxide lamp filament, a cross-shaped sliding table, a long pressing plate, a bread board, a nut and a cutter fixing clamp. The state monitoring device comprises a molecular pump set, a vacuum valve, a cold cathode ionization vacuum gauge, a vacuum chamber, a hot cathode ionization vacuum gauge, a controller, an upper computer and a high-speed camera. The operation process of the damage system provided by the invention completely meets the requirement for damage to the coating width and the depth of the lamp filament, and the precision is relatively accurate. Moreover, the change of the surface of the lamp filament in the working process of the lamp filament can be observed, and real-time damage detection can be carried out on the lamp filament on the basis of processing image information in the experiment process.

Methods of depositing iridium-containing films are described. Methods of manufacturing interconnect structures as part of a microelectronic device fabrication process are also described. The methods include forming a dielectric layer including at least one feature defining a gap having sidewalls and a bottom on a substrate. The methods further include forming a blocking layer on the bottom by exposing the substrate to a blocking compound; selectively depositing an iridium-containing film on the sidewalls; removing the blocking layer; and performing a gap fill process to fill the gap with a gapfill material.

An organic light-emitting device including a first electrode, a second electrode facing the first electrode, and an organic layer disposed between the first electrode and the second electrode, wherein the organic layer includes an emission layer, wherein the emission layer includes an electron transport host, a hole transport host, and a dopant, wherein the dopant includes an organometallic compound, and wherein the organometallic compound does not comprise iridium, wherein the organic light-emitting device satisfies predetermined parameters described in the specification.

According to the method for growing the diamond through ion implantation of carbon on the iridium-containing substrate, an ion implantation device comprises an iridium-containing base substrate and a target material, gas and an ion source are provided for a reaction cavity, a diamond core is formed on the base substrate through an ion implantation method, the base substrate is transferred into an MPCVD device, and diamond growth is conducted through the MPCVD device. The technical problem that the nucleation density of the large-size diamond containing the Ir substrate is not uniform is solved, and the technical effect of improving the growth quality of the large-size diamond containing the Ir substrate is achieved. The method is an innovative method combining multi-energy ion implantation and an MPCVD process, a nucleation layer in gradient distribution is formed in an iridium-containing substrate by accurately regulating and controlling carbon ion implantation energy and dosage, and meanwhile, process parameters in a growth stage are optimized, so that the bottleneck in the prior art is broken through, and efficient preparation of a high-quality diamond film is realized.

The invention belongs to the technical field of photosensitizers, and provides a near-infrared iridium complex, a preparation method thereof and application of the near-infrared iridium complex in preparation of a photodynamic therapy preparation. According to the near-infrared iridium complex, 1-(benzo [b] thiophene-2-yl) isoquinoline-4-formonitrile is introduced, and the introduction of cyano groups can significantly reduce an energy gap, so that the iridium complex emits red shift, and the tissue penetrating power is improved; meanwhile, a 2-(3, 5-dimethoxyphenyl)-1-phenyl-1H-imidazo [4, 5-f] [1, 10] phenanthroline ring structure is combined, and a 2-dimethoxyphenyl electron donating group is introduced, so that charge transfer of the near-infrared iridium complex is effectively promoted, the triplet-state service life of the complex is prolonged, and the capability of generating reactive oxygen species (ROS) of the near-infrared iridium complex can be effectively improved. The maximum absorption wavelength of the near-infrared iridium complex is 544 nm, the maximum emission wavelength of the near-infrared iridium complex is 720 nm, and the limitation of tissue penetration can be effectively overcome.

A preparation method of a coated high-dielectric low-loss microwave ferrite material belongs to the field of electronic materials. The coated high-dielectric low-loss microwave ferrite material of the present invention has a core of NiCuZn ferrite based on NiCuZn ferrite material, and Ir element is used for performance regulation to reduce the microwave loss of the material and obtain excellent low-loss ferrite; the outer shell is carbon spheres prepared by the hydrothermal method, which has a good dielectric constant, is coated on the outside of the ferrite, has good uniformity, and improves the dielectric constant of the material. The coated high-dielectric low-loss microwave ferrite material prepared by the present invention has a high dielectric constant (ε' = 30 - 60) and low microwave loss (ferromagnetic resonance linewidth ΔH = 120 - 180 Oe) in the microwave frequency band (9.56 GHz), meeting the application requirements of circulators, isolators, and phase shifters in the microwave frequency band.

The invention discloses an iridium complex as well as a preparation method and application thereof, and relates to the technical field of optogenetics. The iridium complex has the following structural formula, X is an anion, Y is selected from an alkane derivative, an ether derivative or an amine derivative, the iridium complex provided by the invention is regular in structure, the central metal atom iridium has excellent fluorescent property, and fluorine atoms and trifluoromethyl groups introduced into the ligand have excellent fluorescent property, so that the fluorescence intensity of the iridium complex is greatly improved. The electron structure and the energy level of the complex are obviously regulated, the photophysical performance of the complex is enhanced, and excellent two-photon absorption capacity is shown, so that the complex has huge application potential in the fields of biological imaging, photodynamic therapy and the like.

The invention belongs to the field of catalytic materials, and particularly relates to a metal titanium-based biological catalytic material as well as a preparation method and application thereof. The invention provides a metallic titanium-based biological catalytic material which is prepared by the following steps: adsorbing iridium in TiN nanoparticles by adopting a solvent impregnation method, and then carrying out heat treatment to prepare an Ir cluster doped TiN acanthosphere-shaped metallic titanium-based biological catalytic material, namely Ir-TiN. The Ir-TiN prepared by the invention shows excellent POD enzyme-like reaction kinetics: the maximum reaction rate (Vmax) is 5.7339 M s <-1 >, the conversion number (TON) is 88.73 s <-1 >, and the Ir-TiN has excellent ROS catalytic activity and near-infrared light response performance. Experiments show that the Ir-TiN has excellent bacterium removal capability and healing promotion capability on MRSA infected skin wounds, and can activate immune cells of an organism to establish immune memory so as to cope with reinfection.

The application discloses an iridium oxide modified fluorine-doped tin oxide electrode and a preparation method and application thereof. The electrode comprises a light-transmitting fluorine-doped tin oxide conductive glass substrate and an in-situ attached iridium oxide nano-modified layer. The preparation method comprises the following steps: preparation and aging of a precursor solution, alternating current electrochemical deposition, annealing and cleaning, and laser patterning treatment. The application further discloses a cell impedance sensor organ chip system comprising the electrode and application of the system in in-vitro drug screening. The application utilizes the low cost and light-transmitting property of the fluorine-doped tin oxide and the excellent charge injection capacity of the alternating current deposited iridium oxide nano layer to greatly reduce the interface impedance. The scheme meets the in-situ optical observation, realizes the high-sensitivity biological impedance monitoring comparable to gold electrodes, effectively solves the problems of high cost and complex process of the existing organ chip electrode, and is very suitable for popularization and application as a disposable high-throughput consumable.

The present application relates to a metal iridium complex and an organic electroluminescent device. The metal iridium complex has a general formula of Ir(La)(Lb)(Lc), the structure thereof being shown as a formula (1). The metal iridium complex provided by the present application has the advantages of low evaporation deposition temperature, high optical and electrochemical stability, narrow half-peak width, high color saturation, high light-emitting efficiency, long device service life and the like. Therefore, the metal iridium complex can be used in organic light-emitting devices, particularly used as a red light-emitting phosphorescent material, and has the possibility of being applied to the AMOLED industry.

A light-emitting substance used for a light-emitting layer and a novel organic compound that can be used as a host material in which the light-emitting substance is dispersed are provided. A light-emitting element including the organic compound is provided. A light-emitting device, an electronic device, and a lighting device each including the light-emitting element are provided.SOLUTION: The light-emitting device includes an EL layer between a pair of electrodes. The EL layer includes a first compound and a second compound. The first compound is a phosphorescent iridium complex having a LUMO level higher than or equal to - 3. 5eV and lower than or equal to - 2. 5eV. The light-emitting element includes an EL layer between a pair of electrodes, the EL layer includes a first compound and a second compound, the first compound is a phosphorescent iridium metal complex including a diazine skeleton, and the second compound is an organic compound including a pyrimidine skeleton.SELECTED DRAWING: None

The invention provides an etching method of a resistive random access memory. The etching method of the resistive random access memory comprises the following steps: providing a preset substrate; wherein the preset substrate comprises an organic film layer, a medium anti-reflection layer and a metal iridium film layer which are sequentially arranged from top to bottom; an organic film layer removal step: before the metal iridium film layer is etched, introducing oxygen-containing gas into the chamber so as to etch and remove the organic film layer; a metal iridium film layer etching step: controlling a lower electrode power application mode to be a pulse mode, introducing a first etching gas into the chamber, and etching the metal iridium film layer by taking the etched dielectric anti-reflection layer as a mask until a next film layer is exposed; wherein the first etching gas comprises argon-containing gas, and the first etching gas does not comprise chlorine-containing gas. According to the method, more byproducts generated during etching can be prevented from being attached to the side wall, the shape of the side wall of the metal iridium film layer after etching can be effectively improved, device failure is avoided, and the product yield is improved.

At least one embodiment of the present disclosure provides a light-emitting element and a display substrate. The light-emitting element comprises a first electrode, a light-emitting functional layer and a second electrode, which are sequentially stacked in a first direction, wherein the light-emitting functional layer comprises a first organic layer, a first light-emitting layer, a second organic layer, a second light-emitting layer, a spacer layer, a third light-emitting layer and a third organic layer, which are sequentially stacked in the first direction; the material of the second light-emitting layer comprises a first electron-blocking material and a light-emitting material doped in the first electron-blocking material, the light-emitting material comprising at least one of a platinum complex and an iridium complex; and the material of the spacer layer comprises a second electron-blocking material. In the embodiments of the present disclosure, the original phenomenon of exciton quenching caused by an excessively high concentration of excitons on an interface of the second light-emitting layer is eliminated, and therefore the light-emitting element can emit light in the middle region of the second light-emitting layer, thereby improving the luminous efficacy of the light-emitting element and prolonging the service life of a display substrate.

The purpose of the present invention is to provide a reflective mask blank having an absorber film that has a low refractive index n for EUV light, a high extinction coefficient k for EUV light, and excellent SPM resistance. An absorber film (18) of a reflective mask blank (10) contains palladium and at least one element X selected from the group consisting of ruthenium, iridium, and platinum. The total content of palladium and the element X in the absorber film (18) is 80 at% or more with respect to the total metal atoms contained in the absorber film (18). When the element X is only ruthenium, the content of the element X in the absorber film (18) is 20-75 at% with respect to the total atoms in the absorber film (18). When the element X contains at least one of iridium or platinum, the content of the element X in the absorber film (18) is 30 at% or more with respect to the total atoms in the absorber film (18).

The application relates to the field of oxygen evolution electrodes, and discloses an Ir cluster loaded nano array self-supporting electrode and a preparation method and application thereof, steps of which are as follows: a mixed solution of Co(NO3)2 and Mn(NO3)2 is prepared, a conductive base body is placed in the mixed solution for constant voltage deposition; then annealing is carried out in an air atmosphere; the electrode after annealing is immersed in an iridium tetrachloride solution; then annealing is carried out in an inert atmosphere; and the electrode after annealing is subjected to acid activation heat induction. The application takes "carrier structure engineering-single atom coordination reconstruction-interface stability reinforcement" as a synergistic regulation path, develops an ultrathin Co2MnO4 spinel nano array synthesized by in-situ self-supporting electrodeposition as a carrier, and utilizes the unique two-dimensional open structure advantage and the directional phase change mechanism induced by acid activation, so that the electronic transmission and mass transfer paths are optimized, and finally the dynamic balance between "single atom activity" and "cluster stability" is realized.

The invention relates to the technical field of semiconductors, and discloses a strontium iridate thin film heterojunction with a low-temperature abnormal Hall effect and a preparation method and application thereof.The heterojunction comprises an SrIrO3 single crystal thin film epitaxially grown on the surface of an SrTiO3 substrate with the crystal face orientation being (001) and an SmNiO3 single crystal thin film epitaxially grown on the surface of the SrIrO3 single crystal thin film; the preparation method comprises the following steps: epitaxially growing a layer of SrIrO3 single crystal film on a pretreated SrTiO3 substrate through a pulse laser deposition system; epitaxially growing a SmNiO3 single crystal film with a certain thickness on the grown SrIrO3 epitaxial film by using a pulse laser deposition technology to obtain a SrTiO3 / SmNiO3 heterojunction; the obtained heterojunction is below 50K, and the temperature has a continuous regulation and control effect on the signal size of the abnormal Hall effect of the heterojunction.

This invention relates to the field of YAG crystal growth technology, specifically a method and apparatus for rapid YAG crystal growth. The growth method includes the following steps: S1, placing the raw material in an iridium crucible, where the raw material is completely melted to form a melt; S2, slowly lowering a seed crystal to the surface of the melt, maintaining a stable temperature after contact with the melt, allowing the end of the seed crystal to melt and form a stable interface with the melt; S3, then obtaining the YAG crystal through a rotation-pulling method, sequentially performing crystal pulling, necking, shoulder formation, constant diameter growth, and tailing. The YAG crystal prepared by this invention exhibits better neodymium ion doping, resulting in improved laser power of the prepared laser crystal.

The application discloses a method for improving nucleation density of large-size single crystal diamond hetero-epitaxy based on iridium-amorphous carbon pre-implantation layer, which comprises the following steps: firstly, pretreating a single crystal silicon substrate through acid washing, acetone or ethanol ultrasonic cleaning method; sequentially epitaxially growing a nanometer-thickness yttrium stabilized zirconium oxide (YSZ) single crystal film buffer layer and an iridium single crystal film functional layer on the treated single crystal silicon surface; then, pre-implanting an amorphous carbon film on the surface of the iridium / YSZ composite substrate, and performing vacuum annealing stress relief and polishing graphite phase large particle removal treatment on the amorphous carbon film to obtain a smooth and flat surface; finally, epitaxially growing single crystal diamond on the surface of the iridium-amorphous carbon pre-implantation layer, and cutting and removing the composite substrate to obtain large-size single crystal diamond hetero-epitaxy. The method utilizes the amorphous carbon implantation layer to accelerate the dissolution-precipitation process of carbon ions entering the iridium film to form a supersaturated solid solution during bias nucleation, increases nucleation sites, and improves nucleation density, which is of great significance for preparing large-size high-quality single crystal diamond.

Provided is a light-emitting element with high emission efficiency. The light-emitting element includes a first organic compound, a second organic compound, and a guest material. The LUMO level of the first organic compound is lower than that of the second organic compound, and the HOMO level of the first organic compound is lower than that of the second organic compound. The LUMO level of a guest material is higher than that of the first organic compound, and the HOMO level of the guest material is lower than that of the second organic compound. The guest material has a function of converting triplet excitation energy into light emission. The first organic compound and the second organic compound form an exciplex.