97 results about "Ir element" patented technology

The invention discloses a manganese-doped Ir-Ta oxide composite coating titanium anode and a preparation method thereof. The titanium anode comprises an insoluble titanium base material, an oxide middle layer and an oxide catalyst layer which are sequentially arranged, wherein the oxide catalyst layer is composed of an iridium (Ir) oxide, a tantalum (Ta) oxide and a doped manganese (Mn) element. The preparation method comprises the following steps: carrying out sand blasting and surface treatment on a titanium substrate to increase the roughness and binding force of the surface, then carrying out proper intermediate layer coating on the surface of the substrate, and finally preparing the manganese-doped Ir-Ta oxide composite coating on the surface of the intermediate layer. Compared with a traditional titanium anode, the prepared manganese-doped Ir-Ta oxide composite coating titanium anode has the advantages of being higher in reaction specific surface area, lower in oxygen evolution potential, longer in catalytic life and the like, and meanwhile the transition metal element manganese is higher in reserve, lower in price and high in oxygen evolution activity.

The invention relates to an IrO2-Ta2O5 titanium anode coating based on graphene doping and temperature programming sintering synergistic enhancement and a preparation method of the IrO2-Ta2O5 titanium anode coating, and belongs to the technical field of electrode material preparation. According to the method, graphene is doped in an IrO2-Ta2O5 coating, the content of the graphene is controlled to be 0.2-0.8 mg / mL, preferably 0.6 mg / mL, the content of iridium is 26 g / m, and a 200-500 DEG C temperature programming sintering process is adopted. By optimizing the graphene dispersing and sintering process, the conductivity, the electrocatalytic activity and the structural stability of the coating are remarkably improved. Experimental results show that the coating has lower charge transfer resistance and higher electric double layer capacitance and oxygen evolution reaction activity, and the strengthening life of the coating exceeds 1100 hours and is far longer than that of a traditional titanium anode coating. The method is suitable for high-requirement electrochemical scenes such as electrolytic copper foil and chlor-alkali industry, and has a good industrial popularization prospect.

The invention relates to an X-beam collimator for a crystal diffraction experiment. A main body of the X-beam collimator is of a stepped structure comprising an upper end thin part and a lower end thick part; the fixing hole is formed in the upper end thin part of the main body and is fixedly connected with an external driving motor to drive the main body to move; the loading hole is formed in the thick part of the lower end of the main body and is a cylindrical blind hole; the light beam control piece is of a cylindrical structure and is made of platinum iridium alloy, a small round hole is formed in the center of the light beam control piece, and the light beam control piece is installed in the loading hole in a matched mode. The light-transmitting hole is formed in the bottom of the loading hole, the axis of the light-transmitting hole is collinear with the light path axis of the coaxial microscope and the diffractometer, and the light-transmitting hole is used for allowing the X beams screened by the small hole to pass through. The fixing holes are fixedly connected with the motor, so that the motor can drive the main body to move; light beam control sheets with different light beam size control capabilities are loaded through the loading holes; the X-ray beam passes through the collimator through the light hole, the structure is simple, the size and the mass are small, and rapid collimation and size control of the X-ray beam can be achieved.

To provide a printed circuit board including a conductor pattern in which delamination hardly occurs when etching a seed metal layer for plating, and such a conductor pattern includes a plurality of fine patterns.SOLUTION: And a conductor pattern including a pattern metal layer disposed on the seed metal layer, wherein the seed metal layer includes a first metal layer including a first metal and a second metal layer disposed on the first metal layer, connected to the pattern metal layer, and including a second metal, and a thickness of the first metal layer is greater than a thickness of the second metal layer, the first metal may be any one selected from the group consisting of aluminum (Al), iridium (Ir), molybdenum (Mo), tungsten (W), cobalt (Co), nickel (Ni), and ruthenium (Ru).SELECTED DRAWING: Figure 3

The application relates to the technical field of electronic materials, and discloses a fluorinated iridium complex, a preparation method and application thereof, and an organic photoelectric device. The fluorinated iridium complex has a structure shown in formula (I): R 1 is a C1-C13 alkyl substituent, R 2 is a C1-C13 alkyl substituent, and the substitution sites are the meta and para positions of a carbon atom of an isoquinoline phenyl linkage, X is an independently existing hydrogen atom, a fluorine atom or an alkyl substituent, wherein the alkyl substituent is a deuterated, partially deuterated or aryl-substituted alkyl group; the fluorinated iridium complex realizes high-efficiency supersaturation deep red light as a red phosphor material in an organic light-emitting device.

The invention discloses an iridium complex as well as a preparation method and application thereof, and relates to the technical field of optogenetics. The iridium complex has the following structural formula, X is an anion, Y is selected from an alkane derivative, an ether derivative or an amine derivative, the iridium complex provided by the invention is regular in structure, the central metal atom iridium has excellent fluorescent property, and fluorine atoms and trifluoromethyl groups introduced into the ligand have excellent fluorescent property, so that the fluorescence intensity of the iridium complex is greatly improved. The electron structure and the energy level of the complex are obviously regulated, the photophysical performance of the complex is enhanced, and excellent two-photon absorption capacity is shown, so that the complex has huge application potential in the fields of biological imaging, photodynamic therapy and the like.

The invention belongs to the field of catalytic materials, and particularly relates to a metal titanium-based biological catalytic material as well as a preparation method and application thereof. The invention provides a metallic titanium-based biological catalytic material which is prepared by the following steps: adsorbing iridium in TiN nanoparticles by adopting a solvent impregnation method, and then carrying out heat treatment to prepare an Ir cluster doped TiN acanthosphere-shaped metallic titanium-based biological catalytic material, namely Ir-TiN. The Ir-TiN prepared by the invention shows excellent POD enzyme-like reaction kinetics: the maximum reaction rate (Vmax) is 5.7339 M s <-1 >, the conversion number (TON) is 88.73 s <-1 >, and the Ir-TiN has excellent ROS catalytic activity and near-infrared light response performance. Experiments show that the Ir-TiN has excellent bacterium removal capability and healing promotion capability on MRSA infected skin wounds, and can activate immune cells of an organism to establish immune memory so as to cope with reinfection.

The application discloses an iridium oxide modified fluorine-doped tin oxide electrode and a preparation method and application thereof. The electrode comprises a light-transmitting fluorine-doped tin oxide conductive glass substrate and an in-situ attached iridium oxide nano-modified layer. The preparation method comprises the following steps: preparation and aging of a precursor solution, alternating current electrochemical deposition, annealing and cleaning, and laser patterning treatment. The application further discloses a cell impedance sensor organ chip system comprising the electrode and application of the system in in-vitro drug screening. The application utilizes the low cost and light-transmitting property of the fluorine-doped tin oxide and the excellent charge injection capacity of the alternating current deposited iridium oxide nano layer to greatly reduce the interface impedance. The scheme meets the in-situ optical observation, realizes the high-sensitivity biological impedance monitoring comparable to gold electrodes, effectively solves the problems of high cost and complex process of the existing organ chip electrode, and is very suitable for popularization and application as a disposable high-throughput consumable.

The present application relates to a metal iridium complex and an organic electroluminescent device. The metal iridium complex has a general formula of Ir(La)(Lb)(Lc), the structure thereof being shown as a formula (1). The metal iridium complex provided by the present application has the advantages of low evaporation deposition temperature, high optical and electrochemical stability, narrow half-peak width, high color saturation, high light-emitting efficiency, long device service life and the like. Therefore, the metal iridium complex can be used in organic light-emitting devices, particularly used as a red light-emitting phosphorescent material, and has the possibility of being applied to the AMOLED industry.

A light-emitting substance used for a light-emitting layer and a novel organic compound that can be used as a host material in which the light-emitting substance is dispersed are provided. A light-emitting element including the organic compound is provided. A light-emitting device, an electronic device, and a lighting device each including the light-emitting element are provided.SOLUTION: The light-emitting device includes an EL layer between a pair of electrodes. The EL layer includes a first compound and a second compound. The first compound is a phosphorescent iridium complex having a LUMO level higher than or equal to - 3. 5eV and lower than or equal to - 2. 5eV. The light-emitting element includes an EL layer between a pair of electrodes, the EL layer includes a first compound and a second compound, the first compound is a phosphorescent iridium metal complex including a diazine skeleton, and the second compound is an organic compound including a pyrimidine skeleton.SELECTED DRAWING: None

The invention provides an etching method of a resistive random access memory. The etching method of the resistive random access memory comprises the following steps: providing a preset substrate; wherein the preset substrate comprises an organic film layer, a medium anti-reflection layer and a metal iridium film layer which are sequentially arranged from top to bottom; an organic film layer removal step: before the metal iridium film layer is etched, introducing oxygen-containing gas into the chamber so as to etch and remove the organic film layer; a metal iridium film layer etching step: controlling a lower electrode power application mode to be a pulse mode, introducing a first etching gas into the chamber, and etching the metal iridium film layer by taking the etched dielectric anti-reflection layer as a mask until a next film layer is exposed; wherein the first etching gas comprises argon-containing gas, and the first etching gas does not comprise chlorine-containing gas. According to the method, more byproducts generated during etching can be prevented from being attached to the side wall, the shape of the side wall of the metal iridium film layer after etching can be effectively improved, device failure is avoided, and the product yield is improved.

At least one embodiment of the present disclosure provides a light-emitting element and a display substrate. The light-emitting element comprises a first electrode, a light-emitting functional layer and a second electrode, which are sequentially stacked in a first direction, wherein the light-emitting functional layer comprises a first organic layer, a first light-emitting layer, a second organic layer, a second light-emitting layer, a spacer layer, a third light-emitting layer and a third organic layer, which are sequentially stacked in the first direction; the material of the second light-emitting layer comprises a first electron-blocking material and a light-emitting material doped in the first electron-blocking material, the light-emitting material comprising at least one of a platinum complex and an iridium complex; and the material of the spacer layer comprises a second electron-blocking material. In the embodiments of the present disclosure, the original phenomenon of exciton quenching caused by an excessively high concentration of excitons on an interface of the second light-emitting layer is eliminated, and therefore the light-emitting element can emit light in the middle region of the second light-emitting layer, thereby improving the luminous efficacy of the light-emitting element and prolonging the service life of a display substrate.

The purpose of the present invention is to provide a reflective mask blank having an absorber film that has a low refractive index n for EUV light, a high extinction coefficient k for EUV light, and excellent SPM resistance. An absorber film (18) of a reflective mask blank (10) contains palladium and at least one element X selected from the group consisting of ruthenium, iridium, and platinum. The total content of palladium and the element X in the absorber film (18) is 80 at% or more with respect to the total metal atoms contained in the absorber film (18). When the element X is only ruthenium, the content of the element X in the absorber film (18) is 20-75 at% with respect to the total atoms in the absorber film (18). When the element X contains at least one of iridium or platinum, the content of the element X in the absorber film (18) is 30 at% or more with respect to the total atoms in the absorber film (18).

The application relates to the field of oxygen evolution electrodes, and discloses an Ir cluster loaded nano array self-supporting electrode and a preparation method and application thereof, steps of which are as follows: a mixed solution of Co(NO3)2 and Mn(NO3)2 is prepared, a conductive base body is placed in the mixed solution for constant voltage deposition; then annealing is carried out in an air atmosphere; the electrode after annealing is immersed in an iridium tetrachloride solution; then annealing is carried out in an inert atmosphere; and the electrode after annealing is subjected to acid activation heat induction. The application takes "carrier structure engineering-single atom coordination reconstruction-interface stability reinforcement" as a synergistic regulation path, develops an ultrathin Co2MnO4 spinel nano array synthesized by in-situ self-supporting electrodeposition as a carrier, and utilizes the unique two-dimensional open structure advantage and the directional phase change mechanism induced by acid activation, so that the electronic transmission and mass transfer paths are optimized, and finally the dynamic balance between "single atom activity" and "cluster stability" is realized.

The invention relates to the technical field of semiconductors, and discloses a strontium iridate thin film heterojunction with a low-temperature abnormal Hall effect and a preparation method and application thereof.The heterojunction comprises an SrIrO3 single crystal thin film epitaxially grown on the surface of an SrTiO3 substrate with the crystal face orientation being (001) and an SmNiO3 single crystal thin film epitaxially grown on the surface of the SrIrO3 single crystal thin film; the preparation method comprises the following steps: epitaxially growing a layer of SrIrO3 single crystal film on a pretreated SrTiO3 substrate through a pulse laser deposition system; epitaxially growing a SmNiO3 single crystal film with a certain thickness on the grown SrIrO3 epitaxial film by using a pulse laser deposition technology to obtain a SrTiO3 / SmNiO3 heterojunction; the obtained heterojunction is below 50K, and the temperature has a continuous regulation and control effect on the signal size of the abnormal Hall effect of the heterojunction.

This invention relates to the field of YAG crystal growth technology, specifically a method and apparatus for rapid YAG crystal growth. The growth method includes the following steps: S1, placing the raw material in an iridium crucible, where the raw material is completely melted to form a melt; S2, slowly lowering a seed crystal to the surface of the melt, maintaining a stable temperature after contact with the melt, allowing the end of the seed crystal to melt and form a stable interface with the melt; S3, then obtaining the YAG crystal through a rotation-pulling method, sequentially performing crystal pulling, necking, shoulder formation, constant diameter growth, and tailing. The YAG crystal prepared by this invention exhibits better neodymium ion doping, resulting in improved laser power of the prepared laser crystal.

The application discloses a method for improving nucleation density of large-size single crystal diamond hetero-epitaxy based on iridium-amorphous carbon pre-implantation layer, which comprises the following steps: firstly, pretreating a single crystal silicon substrate through acid washing, acetone or ethanol ultrasonic cleaning method; sequentially epitaxially growing a nanometer-thickness yttrium stabilized zirconium oxide (YSZ) single crystal film buffer layer and an iridium single crystal film functional layer on the treated single crystal silicon surface; then, pre-implanting an amorphous carbon film on the surface of the iridium / YSZ composite substrate, and performing vacuum annealing stress relief and polishing graphite phase large particle removal treatment on the amorphous carbon film to obtain a smooth and flat surface; finally, epitaxially growing single crystal diamond on the surface of the iridium-amorphous carbon pre-implantation layer, and cutting and removing the composite substrate to obtain large-size single crystal diamond hetero-epitaxy. The method utilizes the amorphous carbon implantation layer to accelerate the dissolution-precipitation process of carbon ions entering the iridium film to form a supersaturated solid solution during bias nucleation, increases nucleation sites, and improves nucleation density, which is of great significance for preparing large-size high-quality single crystal diamond.

Provided is a light-emitting element with high emission efficiency. The light-emitting element includes a first organic compound, a second organic compound, and a guest material. The LUMO level of the first organic compound is lower than that of the second organic compound, and the HOMO level of the first organic compound is lower than that of the second organic compound. The LUMO level of a guest material is higher than that of the first organic compound, and the HOMO level of the guest material is lower than that of the second organic compound. The guest material has a function of converting triplet excitation energy into light emission. The first organic compound and the second organic compound form an exciplex.

According to the invention, three [3 + 2 + 1] coordination mode red light iridium (III) complexes are synthesized: Ir (diqzb) (CF3PhCF3py) Cl, Ir (diqzb) (CF3ppy) Cl and Ir (diqzb) (ppy) Cl. A rigid tridentate ligand diqzb is coordinated with bidentate ligands CF3PhCF3py, CF3ppy and ppy, so that the ligand is synthesized. The emission wavelength of the OLED device is 616 to 649 nm, the current efficiency is 8.6 to 25.6 cd.A <-1 >, and the EQE is 21 to 28%. When the EQEmax of Ir (diqzb) (CF3ppy) Cl reaches 28%, the same type of records are refreshed; and the CIE coordinate (0.703, 0.292) of the Ir (diqzb) (ppy) Cl is close to the standard red coordinate of ITU-R BT.2020. The invention discloses a complex structure, synthesis and a device manufacturing method.

To provide improved metal complexes suitable as emitters for use in OLEDs.SOLUTION: There is provided a mononuclear iridium complex that exhibits oriented emission with an optical orientation anisotropy θ≤0.24, containing three ortho-metallated bidentate ligands or three ortho-metallated bidentate sub-ligands, characterized in that the angle α(μact,d) between the transition dipole moment μact and the electrical dipole moment d is ≤40°.SELECTED DRAWING: None

The present disclosure relates to an organic light emitting diode (OLED) in which at least one emitting material layer includes a dopant having the following structure of Formula 1 and a (hetero) aryl-amine-based material having with a fluorenyl moiety and / or an azine-based material, and an organic light emitting device including the OLED. The OLED and the organic light emitting device including the host and the dopant can improve their luminous efficiency and luminous lifespan.Ir(LA)m(LB)n  [Formula 1]

This invention belongs to the field of pharmaceutical chemistry technology, specifically relating to a near-infrared II luminescent iridium(III) complex photosensitizer, its preparation method, and its application. The near-infrared II luminescent iridium(III) complex photosensitizer disclosed in this invention generates singlet oxygen (…) under 550 nm illumination. 1 O2), hydroxyl radicals (•OH), superoxide anions (O2) •‑ We evaluated the antitumor activity of near-infrared luminescent iridium complexes using mouse breast cancer cells (4T1). Under unilluminated conditions, the near-infrared II luminescent iridium(III) complex photosensitizers showed no significant cytotoxicity to 4T1 cells, while under illumination, they exhibited good phototoxicity to 4T1 cells, with an IC50 value of [missing value]. 50 The concentration is 15.92 μM. We have invented a near-infrared II luminescent iridium(III) complex photosensitizer, which has excellent photoimmunodynamic therapeutic effects and will have important application prospects in the treatment of hypoxic tumors.

This piezoelectric film substrate 100 comprises a substrate 1, a seed layer 2, a lower electrode layer 3, an adjustment layer 4, a piezoelectric layer 5, and an upper electrode layer 6. The seed layer 2 contains a zirconium oxide formed by an epitaxial growth layer on the substrate 1 composed of a (100) silicon single crystal. The lower electrode layer 3 contains at least one among iridium and platinum formed by an epitaxial growth layer on the seed layer 2. The adjustment layer 4 contains a metal oxide having a perovskite structure formed by an epitaxial growth layer on the lower electrode layer 3. The piezoelectric layer 5 is composed of bismuth ferrite preferentially oriented to (100) on the adjustment layer 4.

The invention discloses a water-soluble iridium complex, a phosphorescent film prepared from the water-soluble iridium complex and application of the water-soluble iridium complex and the phosphorescent film, and relates to the technical field of functional materials. Wherein n is an integer from 4 to 7. According to the invention, by introducing the specific alkoxy group with hydrogen-bond interaction capability, the water solubility of the iridium complex and the uniform dispersion of the iridium complex in a water phase are remarkably improved, and the compatibility of the iridium complex with CMC, SA, CS and other natural polymer materials is ensured; meanwhile, a biodegradable natural polymer material is selected as a matrix, so that the composite material system is endowed with good biocompatibility and environmental sustainability.

The invention discloses a miniaturized low-profile flexible ocean galvanic couple type pH sensor and a preparation method thereof, and aims to solve the problems of large profile thickness and insufficient reliability of the conventional flexible pH sensor. A working electrode system and a reference electrode system in the miniaturized low-profile flexible ocean galvanic couple pH sensor are arranged on a flexible polyimide substrate, and the working electrode system comprises an iridium oxide working electrode, a first metal conduction circuit layer and a first metal bonding pad; the iridium oxide working electrode is connected with the first metal bonding pad through the first metal conduction circuit layer, the reference electrode system comprises a reference electrode, a second metal conduction circuit layer and a second metal bonding pad, and the reference electrode is connected with the second metal bonding pad through the second metal conduction circuit layer. The pH response performance is remarkably improved by utilizing the nanocrystalline iridium oxide sensing layer, the sensitivity reaches 72.76 mV / pH, and 16.84 s quick response is realized in a high-flow-velocity marine environment of 3 m / s.

This electronic device substrate (1) is provided with: a sapphire substrate (2) comprising a sapphire single crystal; a buffer layer (4) comprising a single crystal of, e.g., Ir, formed on the sapphire substrate (2) by epitaxial growth; and a diamond layer (6) formed on the buffer layer (4) by epitaxial growth and comprising an n-type or p-type diamond single crystal having a plane orientation of (001), (110), (111), or (311). The plane orientation of the sapphire substrate (2) may be (0001), the plane orientation of the buffer layer (4) may be (111), and the plane orientation of the diamond layer (6) may be (111), and the crystal axis direction < 1-120 > of the sapphire substrate (2), the crystal axis direction <-1-12 > of the buffer layer (4), and the crystal axis direction <-1-12 > of the diamond layer (6) may be parallel to each other.

The utility model discloses a corundum high-temperature iridium plating adjusting device which comprises an operation box, a fixing plate is fixedly connected in the operation box, a receding groove is formed in the fixing plate, an iridium plating mechanism is arranged in the operation box, the iridium plating mechanism comprises a first adjusting assembly and a second adjusting assembly, and the first adjusting assembly and the second adjusting assembly are fixedly connected through the receding groove. And the first adjusting assembly and the second adjusting assembly are used in cooperation, the first adjusting assembly comprises a two-way lead screw, the two-way lead screw is rotationally connected to the interior of the operation box, a first gear is fixedly connected to the outer side of the two-way lead screw, adjusting plates are symmetrically arranged in the operation box, and the adjusting plates are fixedly connected with the moving blocks. According to the corundum high-temperature iridium plating adjusting device disclosed by the utility model, through the arranged iridium plating mechanism, the angle of a spraying surface can be adjusted in a corundum plate iridium plating process, so that the corundum plate iridium plating is more uniform, meanwhile, the corundum plate does not need to be turned over manually, and the corundum high-temperature iridium plating adjusting device is simple in structure and relatively high in practicability.

The invention relates to the technical field of photoelectric materials, and provides an iridium complex and a preparation method thereof, an additive, a photovoltaic film material and an organic photovoltaic device, and the chemical structural formula of the iridium complex is at least one of formulas I-III. The iridium metal complexes are neutral iridium metal complexes containing bidentate ligands and taking trivalent iridium as a coordination center. All the components have a twisted octahedral space structure and are not easy to gather. The iridium complex also has strong spin-orbit coupling, can enhance interstitial crossing from a singlet state to a triplet state, improves phosphorescence efficiency, and realizes efficient luminescence. Due to the characteristics, the three iridium complexes can be used as triplet state additives for improving the performance of organic photovoltaic devices.

The present disclosure relates to a metal iridium complex and use thereof. The metal iridium complex has a general formula Ir(La)(Lb)(Lc), wherein La is the structure represented by formula (1), and Lb is the structure represented by formula (2). The complex has the advantages of low driving voltage, low sublimation temperature, good optical and electrical stability, high luminous efficiency, long service life, high color saturation, and the like, can be used in organic light-emitting devices, and especially as a red luminous phosphorescent material, and has the possibility of being applied to the AMOLED industry.

The application discloses an iridium complex and a preparation method and application thereof, and relates to the technical field of optogenetics. The iridium complex has the following structural formula: wherein X is an anion, and Y is selected from alkane derivatives, ether derivatives or amine derivatives. The iridium complex provided by the application has a regular structure, the central metal atom iridium has excellent fluorescence properties, and the fluorine atoms and trifluoromethyl groups introduced in the ligand not only significantly regulate the electronic structure and energy level of the complex, but also enhance the optical physical properties of the complex, and the excellent two-photon absorption capacity is exhibited, which makes the complex have great application potential in the fields of biological imaging and photodynamic therapy.