53 results about "Ir element" patented technology

To provide a printed circuit board including a conductor pattern in which delamination hardly occurs when etching a seed metal layer for plating, and such a conductor pattern includes a plurality of fine patterns.SOLUTION: And a conductor pattern including a pattern metal layer disposed on the seed metal layer, wherein the seed metal layer includes a first metal layer including a first metal and a second metal layer disposed on the first metal layer, connected to the pattern metal layer, and including a second metal, and a thickness of the first metal layer is greater than a thickness of the second metal layer, the first metal may be any one selected from the group consisting of aluminum (Al), iridium (Ir), molybdenum (Mo), tungsten (W), cobalt (Co), nickel (Ni), and ruthenium (Ru).SELECTED DRAWING: Figure 3

The invention belongs to the field of catalytic materials, and particularly relates to a metal titanium-based biological catalytic material as well as a preparation method and application thereof. The invention provides a metallic titanium-based biological catalytic material which is prepared by the following steps: adsorbing iridium in TiN nanoparticles by adopting a solvent impregnation method, and then carrying out heat treatment to prepare an Ir cluster doped TiN acanthosphere-shaped metallic titanium-based biological catalytic material, namely Ir-TiN. The Ir-TiN prepared by the invention shows excellent POD enzyme-like reaction kinetics: the maximum reaction rate (Vmax) is 5.7339 M s <-1 >, the conversion number (TON) is 88.73 s <-1 >, and the Ir-TiN has excellent ROS catalytic activity and near-infrared light response performance. Experiments show that the Ir-TiN has excellent bacterium removal capability and healing promotion capability on MRSA infected skin wounds, and can activate immune cells of an organism to establish immune memory so as to cope with reinfection.

The application discloses an iridium oxide modified fluorine-doped tin oxide electrode and a preparation method and application thereof. The electrode comprises a light-transmitting fluorine-doped tin oxide conductive glass substrate and an in-situ attached iridium oxide nano-modified layer. The preparation method comprises the following steps: preparation and aging of a precursor solution, alternating current electrochemical deposition, annealing and cleaning, and laser patterning treatment. The application further discloses a cell impedance sensor organ chip system comprising the electrode and application of the system in in-vitro drug screening. The application utilizes the low cost and light-transmitting property of the fluorine-doped tin oxide and the excellent charge injection capacity of the alternating current deposited iridium oxide nano layer to greatly reduce the interface impedance. The scheme meets the in-situ optical observation, realizes the high-sensitivity biological impedance monitoring comparable to gold electrodes, effectively solves the problems of high cost and complex process of the existing organ chip electrode, and is very suitable for popularization and application as a disposable high-throughput consumable.

The present application relates to a metal iridium complex and an organic electroluminescent device. The metal iridium complex has a general formula of Ir(La)(Lb)(Lc), the structure thereof being shown as a formula (1). The metal iridium complex provided by the present application has the advantages of low evaporation deposition temperature, high optical and electrochemical stability, narrow half-peak width, high color saturation, high light-emitting efficiency, long device service life and the like. Therefore, the metal iridium complex can be used in organic light-emitting devices, particularly used as a red light-emitting phosphorescent material, and has the possibility of being applied to the AMOLED industry.

A light-emitting substance used for a light-emitting layer and a novel organic compound that can be used as a host material in which the light-emitting substance is dispersed are provided. A light-emitting element including the organic compound is provided. A light-emitting device, an electronic device, and a lighting device each including the light-emitting element are provided.SOLUTION: The light-emitting device includes an EL layer between a pair of electrodes. The EL layer includes a first compound and a second compound. The first compound is a phosphorescent iridium complex having a LUMO level higher than or equal to - 3. 5eV and lower than or equal to - 2. 5eV. The light-emitting element includes an EL layer between a pair of electrodes, the EL layer includes a first compound and a second compound, the first compound is a phosphorescent iridium metal complex including a diazine skeleton, and the second compound is an organic compound including a pyrimidine skeleton.SELECTED DRAWING: None

The purpose of the present invention is to provide a reflective mask blank having an absorber film that has a low refractive index n for EUV light, a high extinction coefficient k for EUV light, and excellent SPM resistance. An absorber film (18) of a reflective mask blank (10) contains palladium and at least one element X selected from the group consisting of ruthenium, iridium, and platinum. The total content of palladium and the element X in the absorber film (18) is 80 at% or more with respect to the total metal atoms contained in the absorber film (18). When the element X is only ruthenium, the content of the element X in the absorber film (18) is 20-75 at% with respect to the total atoms in the absorber film (18). When the element X contains at least one of iridium or platinum, the content of the element X in the absorber film (18) is 30 at% or more with respect to the total atoms in the absorber film (18).

The invention relates to the technical field of semiconductors, and discloses a strontium iridate thin film heterojunction with a low-temperature abnormal Hall effect and a preparation method and application thereof.The heterojunction comprises an SrIrO3 single crystal thin film epitaxially grown on the surface of an SrTiO3 substrate with the crystal face orientation being (001) and an SmNiO3 single crystal thin film epitaxially grown on the surface of the SrIrO3 single crystal thin film; the preparation method comprises the following steps: epitaxially growing a layer of SrIrO3 single crystal film on a pretreated SrTiO3 substrate through a pulse laser deposition system; epitaxially growing a SmNiO3 single crystal film with a certain thickness on the grown SrIrO3 epitaxial film by using a pulse laser deposition technology to obtain a SrTiO3 / SmNiO3 heterojunction; the obtained heterojunction is below 50K, and the temperature has a continuous regulation and control effect on the signal size of the abnormal Hall effect of the heterojunction.

This invention relates to the field of YAG crystal growth technology, specifically a method and apparatus for rapid YAG crystal growth. The growth method includes the following steps: S1, placing the raw material in an iridium crucible, where the raw material is completely melted to form a melt; S2, slowly lowering a seed crystal to the surface of the melt, maintaining a stable temperature after contact with the melt, allowing the end of the seed crystal to melt and form a stable interface with the melt; S3, then obtaining the YAG crystal through a rotation-pulling method, sequentially performing crystal pulling, necking, shoulder formation, constant diameter growth, and tailing. The YAG crystal prepared by this invention exhibits better neodymium ion doping, resulting in improved laser power of the prepared laser crystal.

The application discloses a method for improving nucleation density of large-size single crystal diamond hetero-epitaxy based on iridium-amorphous carbon pre-implantation layer, which comprises the following steps: firstly, pretreating a single crystal silicon substrate through acid washing, acetone or ethanol ultrasonic cleaning method; sequentially epitaxially growing a nanometer-thickness yttrium stabilized zirconium oxide (YSZ) single crystal film buffer layer and an iridium single crystal film functional layer on the treated single crystal silicon surface; then, pre-implanting an amorphous carbon film on the surface of the iridium / YSZ composite substrate, and performing vacuum annealing stress relief and polishing graphite phase large particle removal treatment on the amorphous carbon film to obtain a smooth and flat surface; finally, epitaxially growing single crystal diamond on the surface of the iridium-amorphous carbon pre-implantation layer, and cutting and removing the composite substrate to obtain large-size single crystal diamond hetero-epitaxy. The method utilizes the amorphous carbon implantation layer to accelerate the dissolution-precipitation process of carbon ions entering the iridium film to form a supersaturated solid solution during bias nucleation, increases nucleation sites, and improves nucleation density, which is of great significance for preparing large-size high-quality single crystal diamond.

Provided is a light-emitting element with high emission efficiency. The light-emitting element includes a first organic compound, a second organic compound, and a guest material. The LUMO level of the first organic compound is lower than that of the second organic compound, and the HOMO level of the first organic compound is lower than that of the second organic compound. The LUMO level of a guest material is higher than that of the first organic compound, and the HOMO level of the guest material is lower than that of the second organic compound. The guest material has a function of converting triplet excitation energy into light emission. The first organic compound and the second organic compound form an exciplex.

The present disclosure relates to an organic light emitting diode (OLED) in which at least one emitting material layer includes a dopant having the following structure of Formula 1 and a (hetero) aryl-amine-based material having with a fluorenyl moiety and / or an azine-based material, and an organic light emitting device including the OLED. The OLED and the organic light emitting device including the host and the dopant can improve their luminous efficiency and luminous lifespan.Ir(LA)m(LB)n  [Formula 1]

This invention belongs to the field of pharmaceutical chemistry technology, specifically relating to a near-infrared II luminescent iridium(III) complex photosensitizer, its preparation method, and its application. The near-infrared II luminescent iridium(III) complex photosensitizer disclosed in this invention generates singlet oxygen (…) under 550 nm illumination. 1 O2), hydroxyl radicals (•OH), superoxide anions (O2) •‑ We evaluated the antitumor activity of near-infrared luminescent iridium complexes using mouse breast cancer cells (4T1). Under unilluminated conditions, the near-infrared II luminescent iridium(III) complex photosensitizers showed no significant cytotoxicity to 4T1 cells, while under illumination, they exhibited good phototoxicity to 4T1 cells, with an IC50 value of [missing value]. 50 The concentration is 15.92 μM. We have invented a near-infrared II luminescent iridium(III) complex photosensitizer, which has excellent photoimmunodynamic therapeutic effects and will have important application prospects in the treatment of hypoxic tumors.

This piezoelectric film substrate 100 comprises a substrate 1, a seed layer 2, a lower electrode layer 3, an adjustment layer 4, a piezoelectric layer 5, and an upper electrode layer 6. The seed layer 2 contains a zirconium oxide formed by an epitaxial growth layer on the substrate 1 composed of a (100) silicon single crystal. The lower electrode layer 3 contains at least one among iridium and platinum formed by an epitaxial growth layer on the seed layer 2. The adjustment layer 4 contains a metal oxide having a perovskite structure formed by an epitaxial growth layer on the lower electrode layer 3. The piezoelectric layer 5 is composed of bismuth ferrite preferentially oriented to (100) on the adjustment layer 4.

The invention discloses a miniaturized low-profile flexible ocean galvanic couple type pH sensor and a preparation method thereof, and aims to solve the problems of large profile thickness and insufficient reliability of the conventional flexible pH sensor. A working electrode system and a reference electrode system in the miniaturized low-profile flexible ocean galvanic couple pH sensor are arranged on a flexible polyimide substrate, and the working electrode system comprises an iridium oxide working electrode, a first metal conduction circuit layer and a first metal bonding pad; the iridium oxide working electrode is connected with the first metal bonding pad through the first metal conduction circuit layer, the reference electrode system comprises a reference electrode, a second metal conduction circuit layer and a second metal bonding pad, and the reference electrode is connected with the second metal bonding pad through the second metal conduction circuit layer. The pH response performance is remarkably improved by utilizing the nanocrystalline iridium oxide sensing layer, the sensitivity reaches 72.76 mV / pH, and 16.84 s quick response is realized in a high-flow-velocity marine environment of 3 m / s.

This application relates to the field of metal material processing technology, specifically to a method for preparing ultra-precision platinum-iridium C-rings for developing. The method of this invention first prepares a tube blank, then uses a laser to segmentally cut the surface of the platinum-iridium alloy tube to form grooves. After cutting, the entire tube is heat-treated at a low temperature, and then the C-ring is cut. Finally, plasma polishing is used to remove surface impurities and burrs to obtain the finished C-ring. This invention overcomes the limitations of existing technologies that require specialized equipment for C-ring preparation, avoids the opening of the C-shaped ends due to stress release after heat treatment, and solves problems such as difficulty in removing burrs after cutting and low production efficiency. It provides a simple, efficient, and suitable-for-large-scale mass production technology for preparing ultra-precision platinum-iridium C-rings for developing, resulting in excellent surface quality and precise dimensions.

This invention belongs to the field of biosensors and electrochemiluminescence (ECL) detection technology, and discloses an electrochemiluminescence sensor based on a UiO-67 confined single-site iridium complex, its construction method, and applications. The system uses zirconium-based metal-organic framework (MOF) material UiO-67 as a carrier, and iridium(III) bridging compounds are bonded through coordination to construct an in-situ Ir@UiO-67 nano-signal probe with high ECL activity. This probe is labeled with P-tau 181 secondary antibody to obtain an Ab2-Ir@UiO-67 complex. Simultaneously, a boron-doped diamond electrode modified with a gold film is used as the substrate electrode, and P-tau 181 primary antibody is immobilized to construct a specific recognition interface. A highly sensitive electrochemiluminescence sensing platform is then assembled via a sandwich immunoassay. This invention improves upon the bottleneck problems of poor water solubility and easy aggregation and quenching of traditional iridium complexes through MOF coordination anchoring and pore spatial confinement effects, achieving ultrasensitive quantitative detection of P-tau 181. It exhibits excellent specificity, reproducibility and stability in plasma samples.

The invention discloses a single crystal diamond substrate with eliminated bicrystal defects and a preparation method of the single crystal diamond substrate. The present invention relates to a single crystal diamond substrate in which bicrystal defects are eliminated, the substrate defects being controlled by disposing a buffer layer comprising an iridium (Ir) metal layer on the upper surface of a base layer comprising an R-plane sapphire substrate, and the single crystal diamond substrate comprising a single crystal diamond layer oriented in the (111) direction.

This invention discloses a neutral iridium dinuclear complex, a method for producing the same, and its applications in the manufacture of organic electronic devices. The invention further relates to organic electronic devices containing the neutral iridium dinuclear complex according to the present invention, particularly organic light-emitting diodes, and their applications in display and lighting technologies. Through optimization of the device structure, the concentration of this neutral iridium dinuclear complex in the matrix can be varied to achieve optimal device performance, making it easier to realize highly efficient, high-brightness, and highly stable OLED devices, and providing a relatively good material option for full-color display and lighting applications.

The present invention is a base substrate for a single-crystal diamond laminate substrate. The base substrate comprises: an initial substrate that has a linear expansion coefficient smaller than that of single-crystal α-Al2O3 and equal to or greater than 0.5 × 10−6 / K, the initial substrate containing at least one of amorphous carbon, glassy carbon, polycrystalline diamond, and single-crystal diamond; a single-crystal α-Al2O3 layer on the initial substrate; and a heteroepitaxial layer composed of any of an iridium film, a rhodium film, and a platinum film on the single-crystal α-Al2O3 layer. The present invention thereby provides a base substrate that has a large area (large diameter) and high crystallinity and is capable of forming a high-quality single-crystal diamond layer having high purity and low stress.

The invention discloses a preparation method and application of an OER electrocatalyst, and belongs to the technical field of catalyst preparation. The preparation method comprises the following steps: S1, heating and evaporating a mixed solution containing a Ru element precursor, an Ir element precursor and a solvent to remove the solvent so as to obtain precursor powder; and S2, adding the precursor powder in the step S1 into molten metal salt, and reacting to obtain the OER electrocatalyst. The catalyst is a two-dimensional ruthenium-iridium oxide nanosheet material, and the electrocatalyst prepared by the method is rich in grain boundary and can provide abundant catalytic reaction active sites, so that the electrocatalyst shows excellent electrocatalytic performance in acidic oxygen evolution reaction. In addition, the preparation method is simple in technological process, large-scale preparation can be achieved, and the preparation method has wide industrial application prospects.

The application discloses an iridium complex sound sensitizer, a preparation method and application thereof, and belongs to the technical field of anti-tumor sound sensitizer drugs. The iridium complex sound sensitizer has two structures, which are named as Ir-1 and Ir-2 respectively, and the preparation methods of the iridium complex sound sensitizer with the two structures are provided. The preparation method is simple, raw materials are easy to obtain, and purification is convenient and easy to operate. Moreover, the prepared iridium complex sound sensitizer has excellent optical physical properties, exhibits good therapeutic effect in mouse breast tumors, effectively inhibits the growth of tumors, and has excellent sonodynamic therapy effect.

The invention relates to the technical field of electrode preparation, and discloses a preparation method and device of an iridium oxide electrode, and the method comprises the steps: preparing an iridium oxide electrode substrate, carrying out the quality detection through a cleaning difference analysis method, obtaining a first quality score, carrying out the classification processing of the substrate according to the first quality score, and preparing a transition layer based on a qualified substrate. Detecting through a viscosity separation analysis method to obtain a second quality score; classifying and processing the electrode base material according to the second quality score; preparing an iridium oxide coating based on a qualified base material; detecting through a ray test evaluation method to obtain a third quality score; through the steps, the quality consistency and the high performance of each layer of the iridium oxide electrode can be ensured, the stability and the reliability of the electrode are improved, the production efficiency is improved, the rate of unqualified products is reduced, and the problem that potential defects of the iridium oxide electrode cannot be recognized in time in the prior art is solved.

The invention discloses a neutral iridium complex containing phenyl thiophene coordination as well as a preparation method and application thereof, and particularly relates to application in an organic light-emitting diode. The invention also relates to an organic electronic device, especially an organic light-emitting diode, comprising the neutral metal iridium complex containing phenyl thiophene coordination according to the invention, and application of the organic electronic device in display and illumination technologies. By optimizing the structure of the device and changing the concentration of the neutral metal iridium complex containing the phenyl thiophene coordination in a matrix, the optimal device performance can be achieved, an OLED device with high efficiency, high brightness and high stability can be conveniently realized, and a better material option is provided for full-color display and illumination application.

The application discloses an iridium complex and a preparation method and application thereof, and the iridium complex comprises a structure shown in the following formula: wherein X ‑ represents an anion. The compound of the application scheme has a spontaneous light emitting characteristic in an alkaline environment, can generate superoxide anions and singlet oxygen, and has catalytic oxidation ability on NADH / NADPH in tumor cells. The complex has good proliferation inhibition ability (IC 50 50 of 3.67 muM) on human non-small cell lung cancer cell lines (A549) under normal oxygen conditions, and also has proliferation inhibition ability (IC 50 50 of 6.85 muM) under anoxic conditions, which has important significance for researching the anti-tumor of the spontaneous light emitting metal iridium complex and provides a new idea for developing the photodynamic therapy of deep tumors in the clinic. In the complex of the application scheme, the donor and the acceptor are covalently attached, the covalent interaction is more stable, and the distance is closer, and therefore, higher transfer efficiency can be achieved.

The application discloses a titanium base-iridium tantalum oxide coating anode and a preparation method and application thereof, and belongs to the technical field of anode preparation. The preparation process of the titanium base-iridium tantalum oxide coating anode is as follows: a solution containing a tantalum source A is brushed on a titanium base body, and then sintering is carried out; the brushing-sintering is repeated to obtain a tantalum-coated titanium base body; an iridium tantalum oxide coating liquid is brushed on the tantalum-coated titanium base body, and then sintering is carried out; and the brushing-sintering is repeated to obtain the titanium base-iridium tantalum oxide coating anode. The iridium tantalum oxide coating liquid contains a tantalum source B, an iridium source and a zirconium source. In the iridium tantalum oxide coating liquid, the mass ratio of the tantalum to the iridium is 6-7:4-5. According to the preparation method, the content of the tantalum in the titanium base-iridium tantalum oxide coating anode is more than 5% higher than the content of the iridium, the decomposition of a complexing agent can be effectively inhibited in an alkaline citric acid electroplating system, the composition of a plating solution is maintained stable, the plating layer quality is ensured, the maintenance cost of the plating solution is reduced, and the service life is prolonged.

The application discloses an iridium complex and an organic light-emitting device, and belongs to the technical field of display. a represents a first substituent selected from at least one of deuterium, halogen, -CF3, -CN, and substituted or unsubstituted C1-C10 alkyl; R1 and R2 are the same or different, and each is independently selected from deuterium, fluorine, substituted or unsubstituted C1-C20 alkyl, or substituted or unsubstituted C3-C20 cycloalkyl; ring A comprises a group as shown in the following chemical structural formula: q≥2, R b represents a second substituent selected from at least one of deuterium, halogen, -CF3, -CN, and substituted or unsubstituted C1-C10 alkyl, and at least two second substituents in ring A are connected to each other to form a substituted or unsubstituted C5-C20 ring.

The invention relates to the technical field of pen point processing, and discloses a pen point iridium welding and post-welding visual online detection integrated device which comprises a machine base. The pen point vibration disc is arranged on one side of the top of the machine base; the pen point dislocation mechanism is arranged on one side of the pen point vibration disc; the pen point shifting mechanism is arranged at the top of the machine base; the welding mechanism is arranged at the bottom of the electric clamp, the welding mechanism comprises an upper welding assembly and a lower welding assembly, an ejector pin is arranged on the inner side of the iridium granule box in a lifting mode, and a ventilation pipe is arranged at the top of the iridium granule box; the camera detection assembly is arranged on the side, away from the pen point dislocation mechanism, of the welding mechanism; the bad barrel is arranged on one side of the camera detection assembly; and the discharging assembly is arranged on one side of the camera detection assembly. The pen point iridium welding and post-welding visual on-line detection integrated device can effectively solve the problem that in the prior art, high-beat automatic production is difficult to achieve through manual detection after pen point iridium particles are welded.

This utility model relates to the field of interventional tumor diagnostic and treatment medical device technology, and discloses an umbrella-shaped anchored tumor marker and its implantation system. The umbrella-shaped anchored tumor marker includes an umbrella-shaped anchoring system composed of multiple umbrella ribs with shape memory properties. The proximal ends of the ribs converge to form an axial central tube. The surface of the ribs has micro-barb structures formed by laser etching. The umbrella-shaped anchoring system remains in a contracted state at temperatures below body temperature and autonomously unfolds into a three-dimensional umbrella-shaped anchoring form at body temperature. In this utility model, the distal end of the umbrella ribs integrates a platinum-iridium alloy imaging tip with gradient stiffness (rigid at the proximal end and flexible at the distal end). The barbs are spaced along the length of the umbrella ribs. The shape memory alloy is in one state during delivery at room temperature and can self-unfold in vivo, achieving effective anchoring and imaging, thus aiding in tumor marking.

Provided is a heat-resistant Ir alloy, which is further improved in Vickers hardness while maintaining satisfactory processability. Specifically, provided is a heat-resistant Ir alloy, including: 5 mass % to 30 mass % of Pt; 0.5 mass % to 5 mass % of Ta; and 0.003 mass % to 0.15 mass % of at least one kind selected from the group consisting of: Sc; Hf; and W, with the balance being Ir.

The invention discloses a preparation method of a nano carrier Ir-Mn-CMP NPs and a biomedical application of the nano carrier Ir-Mn-CMP NPs. According to the nano-carrier Ir-Mn-CMP NPs, the combination of a sound sensitive agent, namely, Iridium (III) complex, Ir (III) complex, manganese (Mn) and cyclic GMP-AMP (cGAMP) is utilized, and the combination of sonodynamic therapy and STING (stimulant of interest) pathways is used for activating immunotherapy, so that the anti-tumor treatment effect is improved. The invention further discloses a preparation method of the nano-carrier Ir-Mn-CMP NPs for preparing the nano-carrier Ir-Mn-CMP NPs, and the preparation method of the nano-carrier Ir-Mn-CMP NPs for preparing the nano-carrier Ir-Mn-CMP NPs for preparing the nano-carrier Ir-Mn-CMP NPs. According to the design, the stability and the water solubility of the sonosensitizer can be enhanced, the tumor targeting property and the bioavailability of Mn can be improved, and meanwhile, the dual treatment effects of sonodynamic therapy and STING pathway immune activation are achieved.