236 results about "Deposition chamber" patented technology

A deposition apparatus comprises: an infeed chamber; a preheat chamber; a deposition chamber; and optionally at least one of a cooldown chamber and an outlet chamber. At least a first of the preheat chamber and the cooldown chamber contains a buffer system for buffering workpieces respectively passing to or from the deposition chamber.

Substrate processing chamber gas distribution assemblies and methods utilizing of processing substrates using the same are described. The gas distribution assembly includes an edge ring having a plurality of edge ring openings disposed on the outer peripheral portion and an inner pumping liner including a pumping liner wall concentric with the edge ring and an outer pumping liner wall, the inner pumping liner wall and the outer pumping liner wall defining a pumping liner, the inner pumping liner wall having a plurality of inner pumping liner wall openings. Rotation of the edge ring provides in situ flow conductance through the pumping liner.

The application relates to a deposition chamber structure and an MPCVD device, and belongs to the field of diamond synthesis devices. The technical scheme is as follows: a deposition chamber structure comprises a base, a tubular quartz window is fixedly arranged on the base, an upper cover is sealingly connected above the quartz window, a metal ring is arranged outside the quartz window, a plurality of horizontally arranged and vertically arranged microwave feeding slits are arranged in the middle region of the metal ring, a resonant metal cavity is arranged outside the middle region of the metal ring, the resonant metal cavity is used for being connected with a microwave source, a growth base capable of multi-stage lifting is arranged in the quartz window, the dimension of microwave feeding is increased, a discharge area is coupled above the growth base to form a plasma with the characteristics of large size, uniform stability and high energy density, the growth base can be lifted in multiple stages, the deposition quality of a growth sample is optimized, the deposition area of the growth sample is expanded, and preparation of a high-quality large-size diamond crystal is realized.

Disclosed in the present invention are a thin film deposition device and a deposition method, relating to the technical field of semiconductors. The thin film deposition device comprises an ALD main body, a hafnium source filter, and a hafnium source pipe. Two ends of the hafnium source filter are respectively connected to the ALD main body and the hafnium source pipe; the ALD main body has a deposition chamber, and the hafnium source pipe is in communication with the deposition chamber via the hafnium source filter; and the hafnium source pipe is used for introducing hafnium(IV) chloride gas into the deposition chamber, and the hafnium source filter is used for filtering hafnium(IV) chloride particles from the hafnium(IV) chloride gas. The thin film deposition device provided in the present invention can significantly improve the deposition quality of a hafnium(IV) oxide thin film.

This invention provides a PVD-grown undoped ε-Ga₂O₃ thin film and its preparation method. The preparation method includes the following steps: Step S1, preparing a substrate and target material, and placing them in the main deposition chamber of a physical vapor deposition (PVD) apparatus; Step S2, heating the substrate to above 650°C, introducing oxygen as the growth atmosphere gas, and using a gallium oxide target material with a tin atomic ratio of 0.5-2.5% to deposit a first thin film on the substrate; Step S3, depositing an aluminum oxide layer as a diffusion barrier layer on the surface of the first thin film; Step S4, using a pure gallium oxide target material, depositing a thin film on the surface of the aluminum oxide layer; cooling to room temperature to obtain the undoped ε-Ga₂O₃ thin film. The undoped ε-Ga₂O₃ photodetector prepared by the pulsed laser deposition system of this invention has a much higher PDCR value than tin-doped ε-Ga₂O₃ devices.

A method and apparatus for processing semiconductor substrates is described herein. The apparatus includes one or more growth monitors disposed within an exhaust system of a deposition chamber. The growth monitors are parameteric resonance monitors and are configured to measure the film thickness grown on the growth monitors while a substrate is being processed within the deposition chamber. The growth monitors are connected to a controller, which adjusts the heating apparatus and gas flow apparatus settings during the processing operations. Measurements from the growth monitors as well as other sensors within the deposition chamber are used to adjust processing chamber models of the deposition chamber as substrates are processed therein.

The utility model discloses a modularized rain sewage diversion box with a self-cleaning function, which comprises a diversion rainwater box, a module partition plate is correspondingly arranged in the diversion rainwater box, and the interior of the diversion rainwater box is divided into a precipitation cavity and a filtering treatment cavity by the module partition plate. According to the utility model, the interior of the diversion rainwater tank is divided into the precipitation cavity and the filtering treatment cavity by the module partition plate for respectively precipitating and filtering, so that reclaimed water and clean water can be conveniently treated and used, and the two backwashing cleaning pieces can be externally connected with an external water source for respectively backwashing the precipitation cavity and the filtering treatment cavity; the water filtering part and the flow guide control part are not prone to being blocked, dirt and impurities can be circularly cleaned and filtered through the filtering and cleaning tank, water is saved while self-cleaning is convenient, the device is convenient to carry out modularized split-flow water outlet, reclaimed water outlet and clean water outlet, the application range is large, the self-cleaning backwashing effect is good, cleaning is convenient, and water is saved.

The utility model provides an edge ring flatness detection device which is applied to a vapor deposition chamber, the vapor deposition chamber comprises a base and an edge ring located at the edge of the base, a heater is arranged in the base and is used for heating the base, and the edge ring flatness detection device comprises a detection main body and a control device, the contact indication structure surrounds the edge of the detection main body; wherein the projection of the detection main body along the vertical direction coincides with the projection of the base along the vertical direction; the positioning rotating device is positioned on the detection main body and is used for positioning the detection main body to a preset position on one side, deviating from the heater, of the base, and the outer edge of the detection main body is matched with the outer edge of the base at the preset position; and the detection main body is rotated at the preset position. According to the embodiment of the invention, the flatness of the edge ring can be detected, so that the deposition effect of substrate film deposition is improved.

The application discloses a method for dynamically and continuously preparing a high-strength and stable ultrathin tin-based protective layer on a copper wire and a copper wire with the high-strength and stable ultrathin tin-based protective layer. The method comprises the following steps: the copper wire enters a deposition chamber through a plurality of vacuum differential pressure sealing transition chambers, an ultrathin nanocrystalline coating is deposited by using a Sn-Ge alloy target with a mass fraction of Ge of 0.2-0.6 wt%, then the ultrathin nanocrystalline coating is treated by on-line bombardment processing in an adjacent vacuum chamber by using 20-80 eV Ar / N2 mixed low-energy plasma, and finally the copper wire is taken out through the plurality of vacuum chambers and is wound on a take-up reel, so that the preparation is completed. Through the synergistic effect of Ge element pinning nanocrystalline and plasma surface layer densification, the unity of coating structure stability, tin whisker inhibition and oxidation resistance is realized, the conductivity of the copper wire is not substantially reduced, the dynamic and continuous production is adapted, and the method has relatively high industrial practicability.

The utility model relates to the related technical field of cutting tool machining, in particular to cutting tool surface multi-element nitride chemical vapor deposition equipment which comprises a deposition box, a motor is fixedly installed on the upper side surface of the deposition box, the output end of the motor is fixedly connected with a connecting shaft, and one end of the connecting shaft is fixedly connected with a rotating frame. According to the chemical vapor deposition equipment for the multi-element nitride on the surface of the cutting tool, through the arrangement of the deposition box, a motor, a connecting shaft, a rotating frame, a first connecting rod, a second gear, a third gear, a second connecting rod and a fourth gear, during deposition work, the motor enables the connecting shaft to drive the rotating frame to rotate; at the moment, a second gear drives a first connecting rod and a third gear to rotate, a fourth gear connected with the third gear in a meshed mode drives the second connecting rod to rotate, a rotating block fixedly connected with the lower end of the second connecting rod drives a mounting frame and a tool rest to rotate, and the tool rest rotates with the second connecting rod as the center and meanwhile rotates with a connecting shaft as the center.

A method for processing a substrate includes positioning a silicon substrate in a deposition chamber. One or more intermediate layers are deposited on a surface of the silicon. The one or more intermediate layers can include strontium, which combines with the silicon to form strontium silicide. Alternatively, the one or more intermediate layers comprise germanium. A layer of amorphous strontium titanate is deposited on the one or more intermediate layers in a transient environment in which oxygen pressure is reduced while temperature is increased. The substrate is then exposed to an oxidizing and annealing atmosphere that oxidizes the one or more intermediate layers and converts the layer of amorphous strontium titanate to crystalline strontium titanate.

This invention discloses a deposition apparatus, including a deposition chamber with a deposition cavity inside. The deposition chamber has an inlet for single-atom or cluster particles to enter the deposition cavity, and a nozzle is provided on the inlet. The deposition cavity has a mounting position for mounting a deposition carrier, and an extraction port for connecting a vacuum pump to create a vacuum in the deposition cavity. The nozzle of this invention features a gradually decreasing inner diameter in the second cavity, accelerating the particles to form a high-speed jet, enhancing the bonding force with the deposition carrier, reducing detachment, and ensuring deposition stability and device reliability. The bottom wall, side walls, and end cap of the deposition chamber are removable and equipped with a sealing structure, facilitating sampling, cleaning, and maintenance, and reducing operational difficulty. The third groove on the mounting platform positions the carrier, and the fourth groove facilitates separation, improving ease of handling. The extraction port maintains a vacuum environment and removes unbound particles, ensuring deposition quality.

A method for solventless perovskite deposition. The method comprises loading a lead target and one or more samples adhered to a substrate support into a deposition chamber, pumping to a high vacuum pressure, and filling the deposition chamber with the vapor of a salt precursor to form a perovskite material.

The utility model belongs to the technical field of metal preparation, and particularly relates to a spray forming device for preparing a dispersion strengthened copper-based material, which comprises a spray deposition chamber, two groups of spray assemblies are arranged above the spray deposition chamber, each group of spray assembly comprises a spray nozzle, each spray nozzle comprises a spray orifice, a spray deposition disc is arranged in the spray deposition chamber, and a spray nozzle is arranged on the spray deposition disc. The jet orifices are all aligned to the upper surface of the jet deposition disc, jet orifices of the nozzles in one set of jet assemblies and jet orifices of the nozzles in the other set of jet assemblies are aligned to the same point of the jet deposition disc, and the jet deposition disc is connected with a rotary lifting driving device so as to drive the jet deposition disc to rotate and ascend and descend synchronously. According to the utility model, through the characteristic of rapid solidification of the spray forming technology, the problem of uniform dispersion phase distribution of the oxide dispersion strengthened copper-based material is reasonably solved, and billets with fine crystal grains, no macrosegregation and lower impurity content are prepared.

This invention discloses a low-temperature stirred deposition apparatus, comprising a reaction chamber with a reaction cavity within it. The reaction chamber is provided with an inlet for single-atom or cluster particles to enter the reaction cavity. An air inlet and an air outlet communicating with the reaction cavity are provided on the reaction chamber. A deposition chamber for mixing single-atom or cluster particles with powder is provided within the reaction cavity. A cooling mechanism is provided between the deposition chamber and the reaction cavity to cool the deposition chamber. A stirring mechanism is also provided between the deposition chamber and the reaction chamber to ensure uniform mixing of single-atom or cluster particles with powder. This invention achieves stable, deep low-temperature cooling of the deposition chamber through the cooling mechanism, promoting the growth of single atoms / clusters to precisely control particle size, while simultaneously stabilizing particle motion and reducing adhesion loss on the deposition chamber wall. The stirring mechanism solves the problem of poor coating quality in traditional devices, making it highly practical.

The utility model relates to the technical field of solar cells, in particular to a copper electroplating heterojunction cell and physical vapor deposition equipment, and the copper electroplating heterojunction cell comprises a yellow diaphragm, a copper-nickel alloy layer and a grid line; the yellow diaphragm comprises a copper seed layer; the copper-nickel alloy layer is deposited on the surface of the copper seed layer; the grid line is deposited on the copper-nickel alloy layer; the physical vapor deposition equipment is used for preparing a copper-nickel alloy layer of the copper electroplating heterojunction cell; the physical vapor deposition equipment is provided with a deposition chamber, and a copper-nickel alloy target material is arranged in the deposition chamber. The physical vapor deposition equipment can be used for preparing a copper electroplating heterojunction battery, and when the copper electroplating heterojunction battery forms a grid line, the loss of redundant electroplating materials can be reduced, and the cost can be reduced.

The application discloses a water-cooled plate and a laser thereof, and relates to the technical field of water-cooled plates, in particular to a water-cooled plate and a laser thereof. The water-cooled plate comprises a plate body, at least one deposition chamber is arranged in the plate body, and the deposition chamber is communicated with a cooling channel in the plate body and used for containing target particles carried by cooling water. The water-cooled plate can effectively intercept target particles such as silt, debris and scale in the cooling water, avoid the target particles from being accumulated and blocked in the narrow cooling channel, ensure the normal circulation of the cooling water in the water-cooled plate, and provide stable and continuous cooling effect for the laser.

An embodiment of an epitaxial deposition chamber includes a chamber body and an upper window and a lower window positioned in the chamber body. In addition, the deposition chamber includes a substrate support positioned in the chamber body, between the upper window and the lower window, so that a processing volume is defined between the substrate support and the upper window. Further, the deposition chamber includes one or more heat sources configured to heat the processing volume and one or more gas inlets into the processing volume. Still further, the deposition chamber includes a plurality of exhaust pathways out of the processing volume. Each of the plurality of exhaust pathways has an adjustable cross-sectional area.

The disclosure relates to a method of producing an intrinsic or doped transition metal dichalcogenide film comprising: providing a substrate in a deposition chamber; providing a reducing environment and an excess of chalcogen in the deposition chamber; and forming the intrinsic or doped transition metal dichalcogenide film on a surface of the substrate. The transition metal may be Mo or W, and the chalcogen may be S, Se, or Te. The reducing environment may be a hydrogen rich environment.

The present invention relates to a thermal radiation trap for measuring the internal temperature of a chamber, and more specifically, to a thermal radiation trap for accurately and stably measuring the internal temperature of a deposition chamber, and even more specifically, to a thermal radiation trap for measuring the internal temperature of a chamber that provides a thermal radiation trap in the form of a deep groove formed inside a deposition chamber and a method for measuring temperature using the same. According to the present invention, the effect of enabling stable temperature measurement is provided by minimizing the influence of temperature deviation on the chamber surface. In addition, it provides the effect of being able to measure a constant internal temperature without being affected by temperature changes occurring during the deposition process.

The invention relates to the field of semiconductors, and provides an in-situ coherent X-ray characterization device, which comprises an X-ray device, a spraying device, a reaction device and a base, the spraying device is provided with at least three gas inlets and gas channels, and the gas inlets, the gas channels and the deposition chamber are communicated; the reaction device comprises a reaction shell and a deposition chamber, the reaction shell is made of a transparent material and can allow X-rays to pass through, and a sample bracket is arranged in the deposition chamber; a thermal radiation channel communicated to the sample bracket is formed in the base, and an optical fiber coupler is arranged at the bottom of the base and is connected to a thermal radiation source through an optical fiber; the X-ray radiation source and the X-ray detector are respectively arranged on two opposite sides of the reaction device, and the X-ray device and / or the sample bracket can rotate relative to the central axis of the deposition chamber. According to the invention, the core contradiction between the traditional MOCVD system and coherent X-ray in-situ characterization is overcome, and the high-resolution, dynamic and non-destructive observation of the whole growth process of the III-group nitride under the real epitaxial condition is realized for the first time.

The embodiment of the utility model provides a lead frame anti-oxidation operation system, and relates to the field of semiconductors. The anti-oxidation operation system for the lead frame comprises a transmission part, a heating source, a plasma power supply, a first air inlet pipe, a heating cover and a deposition cavity, the transmission part is used for transmitting the lead frame, the heating source is connected to the heating cover, the plasma power source and the first air inlet pipe are connected to the deposition cavity, the first air inlet pipe inputs carbon source gas into the deposition cavity, the heating cover is located on the lower side of the deposition cavity, and the heating cover and the deposition cavity are used for getting close to the transmission part under the action of external force. And covering the lead frame for plasma deposition. In the working process, the heating source provides heat energy for the heating cover, and the plasma power supply is used for providing energy to enable the carbon source gas input by the first gas inlet pipe to form plasma in the deposition cavity, so that a graphene coating is conveniently deposited and formed on the lead frame, and the oxidation resistance of the lead frame is further improved; and the negative influence on the use performance is avoided.

Embodiments of the present disclosure provide a display device and a method to manufacture the display device. The method includes forming a first electrode on a substrate, forming a pixel-defining layer on the substrate, where the pixel-defining layer includes an opening that exposes at least a portion of an upper surface of the first electrode, forming a light-emitting layer on the upper surface of the first electrode, and forming a second electrode on the light-emitting layer and the pixel-defining layer using spatial atomic layer deposition (spatial ALD), where the second electrode includes a first sub-electrode and a second sub-electrode disposed on the first sub-electrode, and where the second electrode is formed in a deposition chamber.

The invention discloses a TOPCon photovoltaic cell and a preparation method thereof, and relates to the technical field of photovoltaic cells. The LPCVD furnace is a tubular diffusion furnace and is provided with a furnace mouth area, a furnace middle area and a furnace tail area; reaction gas outlets are respectively formed in the furnace mouth area, the furnace middle area and the furnace tail area; the method comprises the steps that in a deposition chamber of an LPCVD furnace, an n-step deposition process is adopted for preparing an amorphous silicon layer, n is larger than or equal to 2, and the deposition temperature of a furnace mouth area is not lower than the deposition temperature of a furnace middle area and the deposition temperature of a furnace tail area; the deposition temperature of the furnace mouth area in the ith step is not lower than the deposition temperature of the furnace mouth area in the (i + 1) th step, and i is an integer from 1 to n-1; the deposition pressure in the ith step is lower than that in the (i + 1) th step; the reaction gas flow of the furnace mouth area in the ith step is lower than the reaction gas flow of the furnace mouth area in the (i + 1) th step. According to the method, the amorphous silicon layer is deposited through multiple steps, and the deposition temperature, flow and pressure are cooperatively controlled, so that furnace mouth gas accumulation is effectively inhibited, the film thickness uniformity of the silicon wafer at the furnace mouth position is effectively improved, and the appearance white edge defect of the battery piece is eliminated.

The invention belongs to the technical field of aluminum strip surface treatment, and particularly relates to a CVD (chemical vapor deposition)-based aluminum strip surface strengthening process. The method aims at solving the problem that an existing aluminum strip surface strengthening method is difficult to improve the durability of an aluminum strip in a high-salt-mist environment. The method comprises the following steps: firstly, straightening and activating an aluminum strip, and after the treatment is completed, feeding the aluminum strip into a deposition chamber for magnetron sputtering deposition, specifically comprising a metal injection stage, a nitriding support stage and a composite deposition stage. And then, the aluminum strip is fed into a deposition workshop to be subjected to a pulse CVD process, functional modification is carried out after the pulse CVD process is completed, and a Ti-Si diffusion layer, a TiSiN diffusion layer, a Ti-Si-C-N composite layer, a multi-layer corrosion-resistant layer and a fluorine-containing layer are sequentially arranged on the surface of the aluminum strip subjected to the surface strengthening process. According to the surface strengthening process provided by the invention, the use durability of the aluminum strip in a high salt mist environment can be effectively guaranteed, and the aluminum strip has excellent surface hardness and structural stability.

The invention relates to a method for manufacturing a receiving substrate to form a composite substrate, comprising a step of supplying a base substrate, a step of deposition in a deposition chamber of an electrically charge-trapping layer in contact with the base substrate. The trapping layer comprises 40% to 80% silicon atoms, 0.1% to 45% oxygen atoms, and 0.2% to 50% nitrogen atoms. The deposition step of the trapping layer uses a precursor gas mixture. The mixture comprises a silicon gas, an oxygen gas, and a nitrogen gas. The nitrogen gas is ammonia or a set of molecules that form ammonia in the deposition chamber during the deposition step. (See Figure 1A for the abstract.)

A gas manifold for a single-nozzle deposition chamber, comprising: a base having an upper and lower surface defining a thickness; a primary nozzle having an inlet and an outlet extending through the thickness of the base; and a secondary nozzle having an inlet extending partially through the upper surface of the base and at least one channel extending a certain distance from the side wall of the base, which is in fluid communication with the inlet of the secondary nozzle. The inlet of the primary nozzle has a hollow projection extending from the upper surface of the base into the gas supply section. The channel of the secondary nozzle includes a bend between the side wall of the base and the outlet, configured to pass between a first direct energy source and a second direct energy source, the first and second energy sources being located on the upper wall of the chamber.

The present application relates to the technical field of coating, and particularly provides a diamond deposition device, wherein a deposition chamber is arranged in the deposition device, and the deposition device further comprises a magnetic control unit, which is used for generating a variable magnetic field in the deposition chamber, and the magnetic field controls the ion trajectory in the deposition chamber when changing, so that the ion trajectory is directed to bombard the substrate surface of a workpiece; the present application cooperatively regulates the magnetic field distribution through multiple groups of coils, drives the carbon ions to direct bombard the substrate surface, effectively improves the deposition rate of the diamond film and the uniformity of the film distribution, and improves the quality of the diamond coating.

The invention discloses atomic layer deposition equipment and method for manufacturing a two-dimensional heterogeneous film. The apparatus comprises: a multi-source supply system for providing two or more precursor sources for atomic layer deposition; the multi-source same-cavity deposition cavity is matched with a heater to heat the multi-source same-cavity deposition cavity and provide a deposition reaction chamber for manufacturing a two-dimensional heterogeneous film, and a magnetic operation manipulator can perform multi-angle rotation, inclination or rapid switching on a deposition substrate in a sample deposition chamber of the multi-source same-cavity deposition cavity; and the bypass gas path system is matched with inert gas with the initial air pressure larger than the atmospheric pressure, conveys the various precursor source pulses of the multi-source supply system into the multi-source same-cavity deposition cavity and discharges the precursor source pulses after deposition. Through alternate or mixed supply of multiple precursor sources, controllable deposition of the two-dimensional heterogeneous film in a multi-source same-cavity deposition cavity is achieved, and the quality of the atomic layer deposition two-dimensional heterogeneous film is effectively improved through the in-situ annealing process.

The invention discloses a self-adaptive sealed transmission structure and device for a multi-piece film deposition cavity, the transmission structure comprises a frame, and a lifting device, a transmission device, a reaction cavity device and a sensor device which are arranged on the frame, the lifting device comprises a lifting bracket device, a lifting shaft device and a lifting shaft; the conveying device comprises a bottom plate, a sliding rail and a sliding block, wherein the sliding rail and the sliding block are arranged on the bottom plate and matched with each other. A reaction chamber apparatus. Through the integrated design of multi-piece bearing and self-adaptive sealing, the problems that in the prior art, multi-piece material conveying sealing is not reliable, and the positioning precision is low are solved, the conveying efficiency and the sealing stability are improved, thin film deposition equipment of different specifications is adapted, and wide application prospects are achieved.