672 results about "Deposition chamber" patented technology

The invention provides atomic layer deposition equipment. The atomic layer deposition equipment comprises a deposition chamber; an inert gas source configured to supply an inert gas having an initial pressure greater than an atmospheric pressure; a heater configured to heat the inert gas from the inert gas source and having the initial gas pressure, where the heated inert gas is delivered to the deposition chamber to heat the deposition chamber; and a bypass line fluidly connected to the deposition chamber and configured to direct the inert gas within the deposition chamber out of the deposition chamber. Through the supply of the pressurized gas, the heating time of the deposition chamber can be shortened, and the productivity of the atomic layer deposition equipment is effectively improved.

The invention belongs to the technical field of ultrahigh-temperature ceramic materials, and discloses a high-purity porous tantalum carbide ceramic and a preparation method and application thereof.The preparation method comprises the steps that a porous graphite substrate is horizontally placed in a vertical vapor deposition chamber, after the chamber is vacuumized, argon is introduced, the reaction air pressure is increased to 10-100 mbar, and the graphite substrate is heated to the deposition temperature of the tantalum element; inorganic tantalum salt and hydrogen are conveyed into the cavity, and tantalum element deposition of the first area is achieved; argon is introduced into the reaction chamber, the reaction air pressure is pressurized, the carrier gas flow of the inorganic tantalum salt is increased, the deposition temperature of the tantalum element is increased, tantalum element deposition of the second area is achieved, and the process is repeated to achieve sequential deposition of the tantalum element on the porous graphite substrate from inside to outside; after the tantalum element is completely deposited, the high-purity porous graphite substrate is heated and reacts to obtain tantalum carbide, reaction conditions are adjusted, so that reaction airflow gradually permeates at different depths of the porous material, and Ta is uniformly deposited at different positions.

A method and apparatus for processing semiconductor substrates is described herein. The apparatus includes one or more growth monitors disposed within an exhaust system of a deposition chamber. The growth monitors are quartz crystal film thickness monitors and are configured to measure the film thickness grown on the growth monitors while a substrate is being processed within the deposition chamber. The growth monitors are connected to a controller, which adjusts the heating apparatus and gas flow apparatus settings during the processing operations. Measurements from the growth monitors as well as other sensors within the deposition chamber are used to adjust processing chamber models of the deposition chamber as substrates are processed therein.

The disclosed technology relates generally to semiconductor manufacturing, and more particularly to precursor delivery in cyclic deposition. In one aspect, a method of depositing a thin film comprises alternatingly exposing a substrate in a thin film deposition chamber to a plurality of precursors. Exposing the substrate comprises introducing one of the precursors into the thin film deposition chamber through two or more atomic layer deposition (ALD) valves each configured to supply the one of the precursors.

The present disclosure relates to the field of semiconductor and photovoltaic technology, and in particular to a coating device and a sheet coating system, which solves the problem of poor uniformity of film thickness when the sheet passes through multiple deposition chambers in the coating device in sequence for coating in the related technology. The coating device includes a loading and unloading container, a furnace body, a driving component, at least one air intake uniform flow component and at least one exhaust uniform flow component. The air intake uniform flow component is connected to the air inlet, and the air intake uniform flow component is provided with a plurality of dispersed uniform flow outlet holes, so that the gas entering from the air inlet is diffused from the plurality of uniform flow outlet holes to the process chamber. The air intake uniform flow component and the exhaust uniform flow component are arranged opposite to each other in the vertical direction, and the exhaust uniform flow component is provided with a plurality of dispersed uniform flow exhaust holes, so that the gas in the process chamber is first extracted through the plurality of uniform flow exhaust holes before being extracted from the outlet. The coating device and sheet coating system provided by the present disclosure can improve the uniformity of film thickness when the sheet is coated.

A physical vapor deposition system may include an RF generator configured to transmit an AC process signal to a physical vapor deposition chamber via an RF matching network. A controller of the RF matching network receives the DC magnitude and phase error signals and varies an impedance of the RF matching network in response to the DC magnitude and phase error signals. The matching network operates in a first mode until a tuning dead-zone is determined. Once a tuning dead-zone is determined, the matching network operates in additional modes until the network is tuned. The controller uses a composite value of magnitude and phase error to drive the variable tuning and load capacitors. In some cases, a blended mode (representing multiple tuning algorithms concurrently) may be implemented as a single mode that weights across what would have been multiple modes and thereby tunes the network using a weighted blended mode.

The invention relates to a preparation method of a photovoltaic cell and the photovoltaic cell, and the preparation method comprises the steps: preparing a substrate which comprises a first surface and a second surface which are opposite to each other, and the first surface is of a textured structure; placing the substrate into an ALD (atomic layer deposition) chamber; sequentially depositing an aluminum-silicon layer and an aluminum oxide layer on the first surface; putting the substrate with the aluminum-silicon layer and the aluminum oxide layer into a PECVD (Plasma Enhanced Chemical Vapor Deposition) deposition chamber; depositing a silicon nitride layer on the aluminum oxide layer; introducing ammonia gas into the PECVD deposition chamber, starting a radio frequency power supply, and ionizing hydrogen ions in the ammonia gas; and diffusing the hydrogen ions to the aluminum-silicon layer. The aluminum-silicon layer forms an aluminum-silicon bond on the first surface of the substrate, hydrogen ions are diffused to the aluminum-silicon layer to form an aluminum-hydrogen bond, when ultraviolet light irradiates the surface of the photovoltaic cell, the aluminum-hydrogen bond can reduce the possibility that the silicon-hydrogen bond on the surface of the silicon layer is damaged by the ultraviolet light, the chemical passivation loss of the photovoltaic cell is reduced, and then the conversion efficiency is improved.

The utility model relates to an MPCVD deposition chamber for improving gas distribution, which comprises a deposition chamber body, the deposition chamber body is provided with a top cover part, a bowl-shaped baffle plate with an upward opening is arranged in the deposition chamber body and is positioned at the lower end of the top cover part, the bowl-shaped baffle plate and the top cover part form a first gas mixing cavity, and a plurality of gas outlet holes are uniformly distributed in the bowl-shaped baffle plate; a cone-frustum-shaped shell is arranged in the first gas mixing cavity, the shell is of a hollow structure, a second gas mixing cavity is formed in the shell, the gas inlet pipe is communicated with the second gas mixing cavity, the side wall and the bottom of the shell are each provided with a flow dividing part, and flow dividing holes communicated with the second gas mixing cavity are formed in the flow dividing parts. The gas entering the deposition chamber is uniformly mixed, so that the problems of non-uniform plasma electric field distribution and excessive carbon deposition in the middle area of the molybdenum table caused by non-uniform mixing of the gas entering the deposition chamber can be effectively avoided.

The utility model belongs to the technical field of chemical vapor deposition, and particularly relates to a coupling agent evaporation structure for chemical vapor deposition equipment, which comprises a raw material bin, a feed port is arranged on the raw material bin, the side wall of the raw material bin is connected with a deposition chamber through a connecting bin, and a first heating structure is arranged on the raw material bin. A second heating structure is arranged on the connecting bin, and a thin pipe for connecting the raw material bin and the deposition chamber and allowing a coupling agent to pass through is arranged in the connecting bin. Compared with the prior art, through the ingenious structural design, the coupling agent can enter the deposition chamber in a vacuum atomization, rapid diffusion and uniform diffusion mode, so that the coupling agent can be uniformly deposited on a substrate, and the effect of increasing the adhesive force between the substrate and a film layer is fully exerted.

The invention discloses a thin film deposition cavity with uniform temperature distribution. The thin film deposition cavity comprises a heater, a back plate assembly, a cavity side wall, a cavity bottom plate and a plurality of temperature compensation devices, the back plate assembly comprises a gas inlet and a gas flow homogenizing plate; a vacuum pump interface is arranged on the cavity bottom plate; the temperature compensation device is arranged on the inner side of the side wall of the cavity, or the temperature compensation device is embedded in the side wall of the cavity; the temperature compensation device has the orientation and the light intensity of illumination radiation which can be independently adjusted. The multiple temperature compensation devices are arranged, illumination radiation heating is conducted on the low-temperature area on the front face of the wafer, so that temperature compensation is conducted on the wafer, the temperature of the surface of the wafer in the thin film deposition process is more uniform, and the thin film deposition quality is improved.

A deposition apparatus comprises: an infeed chamber; a preheat chamber; a deposition chamber; and optionally at least one of a cooldown chamber and an outlet chamber. At least a first of the preheat chamber and the cooldown chamber contains a buffer system for buffering workpieces respectively passing to or from the deposition chamber.

The invention relates to the technical field of silicon carbide powder manufacturing, in particular to a high-purity silicon carbide powder synthesis method which comprises the steps that S1, graphite paper or carbon fiber cloth is pasted to a resistance heating material and / or the inner wall of a deposition chamber, and the resistance heating material is connected to an electrode; s2, the pressure in the deposition chamber is adjusted to a vacuum state or replaced with an argon atmosphere, and the temperature is increased to 900-1300 DEG C; s3, methyl trichlorosilane, silicon chloride, hydrogen, argon and hydrocarbon gas are conveyed into the deposition chamber in proportion for deposition for 10-150 h, and a silicon carbide block is obtained; s4, the obtained silicon carbide blocks are sequentially subjected to crushing treatment and cleaning treatment, and silicon carbide powder is obtained; and S5, carrying out high-temperature treatment on the silicon carbide powder to obtain the silicon carbide powder for silicon carbide single crystal growth. The method can improve the production efficiency of the silicon carbide powder and reduce the production cost; the synthesized silicon carbide powder has controllable particle size and high purity.

A method is provided for improving atomic layer deposition efficiency of molybdenum metal by in-situ cleaning and purging a molybdenum oxyhalide precursor transfer line leading to a deposition chamber. The cleaning treatment may be performed by pretreating the transfer line with at least one surface passivating agent and / or by periodically treating the transfer line with at least one corrosion inhibitor. Methods of removing oxides from deposited molybdenum films are also provided.

The invention discloses a silicon wafer lifting ring, thin film deposition equipment and a thin film deposition method. The silicon wafer lifting ring can be arranged in the thin film deposition chamber, a heating table used for bearing a silicon wafer for thin film deposition is arranged in the thin film deposition chamber, and the silicon wafer lifting ring has a telescopic inner diameter; in the film deposition period, the silicon wafer lifting ring is configured in the mode that the telescopic inner diameter is expanded to the first inner diameter larger than the diameter of the silicon wafer and the diameter of the heating table, and the silicon wafer lifting ring does not make contact with the silicon wafer and the heating table; in the silicon wafer lifting period, the silicon wafer lifting ring is configured in the mode that the first inner diameter is shrunk to a second inner diameter smaller than the diameter of the silicon wafer, and the silicon wafer lifting ring is moved to the bottom of the silicon wafer so as to lift the silicon wafer. According to the invention, the silicon wafer is rotated and deposited for multiple times in the cavity through the silicon wafer lifting ring, so that the effects of uniform deposition thickness of a silicon wafer film and high production efficiency are realized.

The present disclosure relates to methods and systems for forming a radical treated film on a surface of a substrate. More particularly, the disclosed methods and systems utilize radical treatment to treat a film which has been deposited on the surface of a substrate. The radical treatment takes place in a radical treatment chamber and the deposition takes place in a deposition chamber, wherein the chambers are operationally coupled to allow a substrate to be transferred between them without any air break.

The invention discloses a cleaning method and a cleaning system for a deposition chamber. The cleaning method comprises the following steps that dissociated NF3 is introduced from the top of a cavity so as to at least clean tungsten residues in the upper half area in the cavity for one time; stopping introducing the dissociated NF3, and introducing dissociated O2 from the top of the chamber so as to at least clean the carbon residues in the upper half area for one time; and dissociated NF3 is introduced from the top and the bottom of the cavity at the same time, so that the tungsten residues and the carbon residues in the upper half area and the lower half area in the cavity are subjected to secondary cleaning. By executing the steps, the problem that the cleaning effect on the carbon residues in the chamber is poor due to combination of nitrogen plasma and oxygen plasma caused by simultaneous dissociation and introduction of NF3 and O2 into the chamber can be solved, so that the cleaning effect on the carbon residues is improved, the cleaning time is shortened, and the cleaning efficiency is improved. And the process effect and the process stability of the tungsten carbide thin film in the chamber are further improved.

The invention discloses a double-temperature-zone low-temperature electrostatic adsorption thin film deposition wafer heater, which comprises a heater disc body, an insulating separator, a heater back plate, a base, a flow path leading-out piece and a radio frequency electrode, the heater disc body is a metal disc body provided with an insulating film; at least two flow channels corresponding to the liquid flow paths are arranged in the heater plate body; the liquid flow path is led out of the thin film deposition cavity through the flow path leading-out piece; the metal disc body is electrically connected with a radio frequency power supply and an electrostatic adsorption power supply through the radio frequency electrodes respectively; and the lower end of the base is connected with a lifting driving device. The flat flow channel is suitable for the PECVD process, the working temperature is 160-250 DEG C, heating and temperature control are carried out in a mode that hot oil exchanges heat in the flat flow channel, the problem that in the PECVD process, the temperature of a plate body of a heater continuously rises after radio frequency is started is solved, the temperature of the plate body can be controlled to fluctuate within the range of + / -1 DEG C at the low working temperature, and the stability of the process is met.

The invention provides a YBCO (Yttrium Barium Copper Oxide) film for a single-photon detector and a deposition method thereof, and the deposition method comprises the following steps: S1, fixing a substrate on a substrate table of pulse laser deposition equipment, vacuumizing, and heating the substrate table to a deposition temperature; s2, oxygen is introduced into the deposition cavity until the oxygen pressure ranges from 0.25 Torr to 0.35 Torr; s3, adopting a YBCO target material, and carrying out pre-sputtering in a baffle closing state; s4, a baffle is opened, sputtering is conducted on the YBCO target material, and a YBCO film precursor is obtained; s5, oxygen is introduced into the deposition cavity, and meanwhile, the annealing temperature is reduced for in-situ annealing treatment; and S6, cooling to room temperature to obtain the YBCO film. According to the method, the high-quality ultrathin YBCO film with the thickness as low as 14 nm is prepared by accurately controlling the deposition parameters and the annealing process of the oxygen atmosphere, the prepared YBCO film still keeps excellent superconducting performance under the ultrathin condition, and the refrigeration cost is greatly reduced.

The invention provides a preparation method and application of a magnetron sputtering high-entropy nitriding composite coating, and belongs to the technical field of surface treatment.The preparation method comprises the steps that a TiZrNbTaW alloy target material is prepared, and the alloy target material is obtained through a powder metallurgy method; substrate treatment, wherein the substrate treatment comprises the steps of grinding and polishing a titanium substrate to be in a mirror surface state and performing ultrasonic cleaning; and the magnetron sputtering deposition process comprises the steps that a deposition chamber is vacuumized to a preset vacuum degree, a substrate is heated, surface impurities are removed through pre-sputtering, nitrogen is introduced under the condition of fixed power, a TiZrNbTaW coating and a TiZrNbTaWN 0.75 nitridation coating are alternately deposited, and the TiZrNbTaW Nx composite coating is formed. The method overcomes the defect of high cost of an existing precious metal protective coating in the field of proton exchange membrane electrolyzed water, provides a protective coating with corrosion resistance and conductivity, and is suitable for being applied to large-scale industrial production.

The invention discloses an aerosol deposition spraying system for particle online grading and a high-density coating preparing method.The system comprises an aerosol generating chamber, a grading device, a nozzle and a deposition chamber, the grading device is arranged between the aerosol generating chamber and the deposition chamber, and the nozzle is arranged in the deposition chamber; the aerosol generation chamber is used for mixing high-pressure carrier gas and raw material powder to form aerosol; the classifier is used for screening and intercepting powder particles and soft aggregates of which the particle sizes exceed a preset size in the aerosol output by the aerosol generation chamber; the nozzle is used for spraying powder particles in the aerosol screened by the classifier to the surface of a base material in the deposition chamber; and the deposition chamber is used for enabling the raw material powder in the aerosol to deposit a required film layer on the surface of the to-be-sprayed base material through a chemical gas phase reaction in a low-pressure environment so as to realize spraying of the to-be-sprayed base material. The method can effectively reduce the grain size in the coating and improve the density of the coating.

A layered thermite composite includes alternating layers of metal oxide and reducing metal deposited upon a substrate. A fuzzy interface layer between each metal oxide layer and reducing metal layer includes reducing metal, reducing metal oxide, and metal oxide at least partially intermixed therein. The fuzzy interface layer forms while moving between chambers in a multi-chamber deposition process which minimizes exposure of the reducing metal to oxygen while moving between chambers. The fuzzy interface layer is not expected to grow in thickness after deposition. The combination of the relative thinness of the fuzzy interface layer as well as the presence of reactants as well as reducing metal oxide maintains the sensitivity of the layered thermite structure to mechanical ignition if the structure is used within a primer.

Substrate processing chamber gas distribution assemblies and methods utilizing of processing substrates using the same are described. The gas distribution assembly includes an edge ring having a plurality of edge ring openings disposed on the outer peripheral portion and an inner pumping liner including a pumping liner wall concentric with the edge ring and an outer pumping liner wall, the inner pumping liner wall and the outer pumping liner wall defining a pumping liner, the inner pumping liner wall having a plurality of inner pumping liner wall openings. Rotation of the edge ring provides in situ flow conductance through the pumping liner.

The embodiment of the invention provides vapor deposition equipment, which comprises a deposition chamber, a gas inlet pipe, a gas outlet pipe, a gas inlet pipe and a gas outlet pipe, the at least one bearing platform is arranged in the deposition chamber and is suitable for bearing a wafer; the spraying device is arranged in the deposition chamber, is opposite to the bearing platform, is communicated with the opening and is suitable for spraying reaction gas to the surface of the wafer so as to form a deposition film on the surface of the wafer; the heating device is arranged below the corresponding bearing platform and is suitable for providing heat for the corresponding wafer; the heating device comprises a plurality of heating elements, the heating elements are connected with different power sources, and voltage values and reaction gas parameters of the power sources connected with the heating elements, resistance values of the corresponding heating elements, physical parameters of the deposited thin film, the distance between the deposited thin film and the center position of the corresponding bearing platform, the initial temperature and the deposition time are related. By adopting the equipment, the uniformity of the thickness of the film deposited on the surface of the wafer can be improved.

The utility model relates to atomic layer deposition processing equipment, which comprises a reaction cavity, an atomic layer deposition module and a moving unit, the reaction chamber comprises an upper part, a lower part and a deposition chamber formed by the upper part and the lower part. The atomic layer deposition module comprises an upper spraying seat and a lower spraying seat, the upper spraying seat is arranged on the upper portion and located in an upper space, the lower spraying seat is arranged on the lower portion and located in a lower space and is separated from the upper spraying seat, and a workpiece to be machined is clamped between the upper spraying seat and the lower spraying seat. The moving unit is connected with the atomic layer deposition module. The moving unit drives the atomic layer deposition module to turn over so that the atomic layer deposition module can be switched between a first deposition mode and a second deposition mode.

The application relates to a deposition chamber structure and an MPCVD device, and belongs to the field of diamond synthesis devices. The technical scheme is as follows: a deposition chamber structure comprises a base, a tubular quartz window is fixedly arranged on the base, an upper cover is sealingly connected above the quartz window, a metal ring is arranged outside the quartz window, a plurality of horizontally arranged and vertically arranged microwave feeding slits are arranged in the middle region of the metal ring, a resonant metal cavity is arranged outside the middle region of the metal ring, the resonant metal cavity is used for being connected with a microwave source, a growth base capable of multi-stage lifting is arranged in the quartz window, the dimension of microwave feeding is increased, a discharge area is coupled above the growth base to form a plasma with the characteristics of large size, uniform stability and high energy density, the growth base can be lifted in multiple stages, the deposition quality of a growth sample is optimized, the deposition area of the growth sample is expanded, and preparation of a high-quality large-size diamond crystal is realized.

The invention relates to the technical field of plating, in particular to a tubular workpiece inner wall film deposition device and method.The deposition device comprises a deposition chamber, the deposition chamber comprises a reaction chamber, a feeding pipeline and a discharging pipeline are oppositely arranged on the two sides of the reaction chamber, and a supporting device is arranged in the reaction chamber; the supporting device is used for placing a tubular workpiece to be plated; the outer wall of the tubular workpiece is coated with the flexible heating piece, the heating bodies are distributed in the flexible heating piece to be plated and used for heating the tubular workpiece in the thin film deposition process, the tubular workpiece is wrapped by the flexible heating piece, the heating bodies and the tubular workpiece are tightly attached in a gapless mode for heating, the heating bodies wrap the tube body, heating is more uniform, and the coating effect is better. The heat conduction effect is high, and uniform deposition of a pipe inner wall film is facilitated; meanwhile, the flexible heating piece on the outer layer is used for supporting, the heat preservation and insulation performance is good, the heat utilization efficiency of the heating body is improved, the heating body is isolated from the supporting device, the heat influence of the supporting device is reduced, and the uniform deposition performance of the film is improved.

Disclosed in the present invention are a thin film deposition device and a deposition method, relating to the technical field of semiconductors. The thin film deposition device comprises an ALD main body, a hafnium source filter, and a hafnium source pipe. Two ends of the hafnium source filter are respectively connected to the ALD main body and the hafnium source pipe; the ALD main body has a deposition chamber, and the hafnium source pipe is in communication with the deposition chamber via the hafnium source filter; and the hafnium source pipe is used for introducing hafnium(IV) chloride gas into the deposition chamber, and the hafnium source filter is used for filtering hafnium(IV) chloride particles from the hafnium(IV) chloride gas. The thin film deposition device provided in the present invention can significantly improve the deposition quality of a hafnium(IV) oxide thin film.

The invention discloses a thin film deposition sample table and a thin film deposition chamber, relates to the field of semiconductor process equipment, and aims to solve the problems of slow temperature change and long process time of a sample on the sample table in the chamber. The thin film deposition sample table comprises a bearing disc used for bearing and placing a sample; the refrigeration pipe is arranged in the bearing disc and is used for cooling the bearing disc; the heat-conducting plate is arranged at the bottom of the bearing disc; the heating part is arranged in the heat conduction plate and used for heating the heat conduction plate and transferring generated heat to the bearing disc through the heat conduction plate. A sample to be processed is placed on the bearing disc, the cavity is closed for thin film deposition, when the sample needs to be heated, heating is conducted through the heating component, and when the sample needs to be cooled, cooling is conducted through the cooling pipe, so that the temperature change requirement of the sample in the cavity is met, and the process time of thin film deposition is shortened.

The utility model discloses a three-phase separator with a better sand discharge effect, which relates to the field of three-phase separator structures and comprises a barrel with a sand deposition cavity, a material inlet is arranged at the top of the sand deposition cavity, a sand washing pipe is arranged in the sand deposition cavity, a pipe inlet of the sand washing pipe is positioned outside the barrel, and a material outlet of the sand washing pipe is positioned outside the barrel. A plurality of sand washing nozzles are arranged on the sand washing pipe part positioned in the cylinder body; a sand storage chamber is arranged at the bottom of the sand deposition cavity, a sand storage space of the sand storage chamber is lower than the bottom of the sand deposition cavity, and a sand discharging opening is formed in the bottom of the sand storage chamber. Sand deposited in the three-phase separator can be effectively discharged, and the service life and the processing capacity of the three-phase separator are guaranteed.

The invention provides a method for improving fluorine ion corrosion resistance of an aluminum piece in a deposition chamber of PECVD (Plasma Enhanced Chemical Vapor Deposition) equipment and corrosion-resistant PECVD equipment prepared by adopting the method. The method comprises the following steps: (1) introducing a first oxygen-containing gas and a first protective gas into a deposition chamber, heating a heating disc in the deposition chamber, turning on a power supply connected with a spraying plate in the deposition chamber, generating a radio frequency field in the deposition chamber, and performing first plasma vapor deposition, an aluminum oxide layer is formed on the surface of the aluminum heating disc and / or the spraying plate; and (2) turning off the power supply, introducing plasmas obtained by excitation of a second oxygen-containing gas and a second protective gas into the deposition chamber, heating a heating disc in the deposition chamber, and carrying out second plasma vapor deposition so as to form an aluminum oxide layer on the surface of the inner wall of the aluminum deposition chamber. The advantages of the PECVD equipment are utilized, disassembly and retreatment can be avoided, plasma oxidation treatment is directly carried out on the aluminum piece in the vacuum chamber, and the fluorine ion corrosion resistance of the aluminum piece is improved.