469 results about "Deposition chamber" patented technology

The invention provides atomic layer deposition equipment. The atomic layer deposition equipment comprises a deposition chamber; an inert gas source configured to supply an inert gas having an initial pressure greater than an atmospheric pressure; a heater configured to heat the inert gas from the inert gas source and having the initial gas pressure, where the heated inert gas is delivered to the deposition chamber to heat the deposition chamber; and a bypass line fluidly connected to the deposition chamber and configured to direct the inert gas within the deposition chamber out of the deposition chamber. Through the supply of the pressurized gas, the heating time of the deposition chamber can be shortened, and the productivity of the atomic layer deposition equipment is effectively improved.

The invention belongs to the technical field of ultrahigh-temperature ceramic materials, and discloses a high-purity porous tantalum carbide ceramic and a preparation method and application thereof.The preparation method comprises the steps that a porous graphite substrate is horizontally placed in a vertical vapor deposition chamber, after the chamber is vacuumized, argon is introduced, the reaction air pressure is increased to 10-100 mbar, and the graphite substrate is heated to the deposition temperature of the tantalum element; inorganic tantalum salt and hydrogen are conveyed into the cavity, and tantalum element deposition of the first area is achieved; argon is introduced into the reaction chamber, the reaction air pressure is pressurized, the carrier gas flow of the inorganic tantalum salt is increased, the deposition temperature of the tantalum element is increased, tantalum element deposition of the second area is achieved, and the process is repeated to achieve sequential deposition of the tantalum element on the porous graphite substrate from inside to outside; after the tantalum element is completely deposited, the high-purity porous graphite substrate is heated and reacts to obtain tantalum carbide, reaction conditions are adjusted, so that reaction airflow gradually permeates at different depths of the porous material, and Ta is uniformly deposited at different positions.

A method and apparatus for processing semiconductor substrates is described herein. The apparatus includes one or more growth monitors disposed within an exhaust system of a deposition chamber. The growth monitors are quartz crystal film thickness monitors and are configured to measure the film thickness grown on the growth monitors while a substrate is being processed within the deposition chamber. The growth monitors are connected to a controller, which adjusts the heating apparatus and gas flow apparatus settings during the processing operations. Measurements from the growth monitors as well as other sensors within the deposition chamber are used to adjust processing chamber models of the deposition chamber as substrates are processed therein.

The disclosed technology relates generally to semiconductor manufacturing, and more particularly to precursor delivery in cyclic deposition. In one aspect, a method of depositing a thin film comprises alternatingly exposing a substrate in a thin film deposition chamber to a plurality of precursors. Exposing the substrate comprises introducing one of the precursors into the thin film deposition chamber through two or more atomic layer deposition (ALD) valves each configured to supply the one of the precursors.

The present disclosure relates to the field of semiconductor and photovoltaic technology, and in particular to a coating device and a sheet coating system, which solves the problem of poor uniformity of film thickness when the sheet passes through multiple deposition chambers in the coating device in sequence for coating in the related technology. The coating device includes a loading and unloading container, a furnace body, a driving component, at least one air intake uniform flow component and at least one exhaust uniform flow component. The air intake uniform flow component is connected to the air inlet, and the air intake uniform flow component is provided with a plurality of dispersed uniform flow outlet holes, so that the gas entering from the air inlet is diffused from the plurality of uniform flow outlet holes to the process chamber. The air intake uniform flow component and the exhaust uniform flow component are arranged opposite to each other in the vertical direction, and the exhaust uniform flow component is provided with a plurality of dispersed uniform flow exhaust holes, so that the gas in the process chamber is first extracted through the plurality of uniform flow exhaust holes before being extracted from the outlet. The coating device and sheet coating system provided by the present disclosure can improve the uniformity of film thickness when the sheet is coated.

A physical vapor deposition system may include an RF generator configured to transmit an AC process signal to a physical vapor deposition chamber via an RF matching network. A controller of the RF matching network receives the DC magnitude and phase error signals and varies an impedance of the RF matching network in response to the DC magnitude and phase error signals. The matching network operates in a first mode until a tuning dead-zone is determined. Once a tuning dead-zone is determined, the matching network operates in additional modes until the network is tuned. The controller uses a composite value of magnitude and phase error to drive the variable tuning and load capacitors. In some cases, a blended mode (representing multiple tuning algorithms concurrently) may be implemented as a single mode that weights across what would have been multiple modes and thereby tunes the network using a weighted blended mode.

The utility model belongs to the technical field of chemical vapor deposition, and particularly relates to a coupling agent evaporation structure for chemical vapor deposition equipment, which comprises a raw material bin, a feed port is arranged on the raw material bin, the side wall of the raw material bin is connected with a deposition chamber through a connecting bin, and a first heating structure is arranged on the raw material bin. A second heating structure is arranged on the connecting bin, and a thin pipe for connecting the raw material bin and the deposition chamber and allowing a coupling agent to pass through is arranged in the connecting bin. Compared with the prior art, through the ingenious structural design, the coupling agent can enter the deposition chamber in a vacuum atomization, rapid diffusion and uniform diffusion mode, so that the coupling agent can be uniformly deposited on a substrate, and the effect of increasing the adhesive force between the substrate and a film layer is fully exerted.

The invention discloses a thin film deposition cavity with uniform temperature distribution. The thin film deposition cavity comprises a heater, a back plate assembly, a cavity side wall, a cavity bottom plate and a plurality of temperature compensation devices, the back plate assembly comprises a gas inlet and a gas flow homogenizing plate; a vacuum pump interface is arranged on the cavity bottom plate; the temperature compensation device is arranged on the inner side of the side wall of the cavity, or the temperature compensation device is embedded in the side wall of the cavity; the temperature compensation device has the orientation and the light intensity of illumination radiation which can be independently adjusted. The multiple temperature compensation devices are arranged, illumination radiation heating is conducted on the low-temperature area on the front face of the wafer, so that temperature compensation is conducted on the wafer, the temperature of the surface of the wafer in the thin film deposition process is more uniform, and the thin film deposition quality is improved.

A deposition apparatus comprises: an infeed chamber; a preheat chamber; a deposition chamber; and optionally at least one of a cooldown chamber and an outlet chamber. At least a first of the preheat chamber and the cooldown chamber contains a buffer system for buffering workpieces respectively passing to or from the deposition chamber.

The invention discloses a cleaning method and a cleaning system for a deposition chamber. The cleaning method comprises the following steps that dissociated NF3 is introduced from the top of a cavity so as to at least clean tungsten residues in the upper half area in the cavity for one time; stopping introducing the dissociated NF3, and introducing dissociated O2 from the top of the chamber so as to at least clean the carbon residues in the upper half area for one time; and dissociated NF3 is introduced from the top and the bottom of the cavity at the same time, so that the tungsten residues and the carbon residues in the upper half area and the lower half area in the cavity are subjected to secondary cleaning. By executing the steps, the problem that the cleaning effect on the carbon residues in the chamber is poor due to combination of nitrogen plasma and oxygen plasma caused by simultaneous dissociation and introduction of NF3 and O2 into the chamber can be solved, so that the cleaning effect on the carbon residues is improved, the cleaning time is shortened, and the cleaning efficiency is improved. And the process effect and the process stability of the tungsten carbide thin film in the chamber are further improved.

The invention discloses a double-temperature-zone low-temperature electrostatic adsorption thin film deposition wafer heater, which comprises a heater disc body, an insulating separator, a heater back plate, a base, a flow path leading-out piece and a radio frequency electrode, the heater disc body is a metal disc body provided with an insulating film; at least two flow channels corresponding to the liquid flow paths are arranged in the heater plate body; the liquid flow path is led out of the thin film deposition cavity through the flow path leading-out piece; the metal disc body is electrically connected with a radio frequency power supply and an electrostatic adsorption power supply through the radio frequency electrodes respectively; and the lower end of the base is connected with a lifting driving device. The flat flow channel is suitable for the PECVD process, the working temperature is 160-250 DEG C, heating and temperature control are carried out in a mode that hot oil exchanges heat in the flat flow channel, the problem that in the PECVD process, the temperature of a plate body of a heater continuously rises after radio frequency is started is solved, the temperature of the plate body can be controlled to fluctuate within the range of + / -1 DEG C at the low working temperature, and the stability of the process is met.

The invention provides a YBCO (Yttrium Barium Copper Oxide) film for a single-photon detector and a deposition method thereof, and the deposition method comprises the following steps: S1, fixing a substrate on a substrate table of pulse laser deposition equipment, vacuumizing, and heating the substrate table to a deposition temperature; s2, oxygen is introduced into the deposition cavity until the oxygen pressure ranges from 0.25 Torr to 0.35 Torr; s3, adopting a YBCO target material, and carrying out pre-sputtering in a baffle closing state; s4, a baffle is opened, sputtering is conducted on the YBCO target material, and a YBCO film precursor is obtained; s5, oxygen is introduced into the deposition cavity, and meanwhile, the annealing temperature is reduced for in-situ annealing treatment; and S6, cooling to room temperature to obtain the YBCO film. According to the method, the high-quality ultrathin YBCO film with the thickness as low as 14 nm is prepared by accurately controlling the deposition parameters and the annealing process of the oxygen atmosphere, the prepared YBCO film still keeps excellent superconducting performance under the ultrathin condition, and the refrigeration cost is greatly reduced.

The invention provides a preparation method and application of a magnetron sputtering high-entropy nitriding composite coating, and belongs to the technical field of surface treatment.The preparation method comprises the steps that a TiZrNbTaW alloy target material is prepared, and the alloy target material is obtained through a powder metallurgy method; substrate treatment, wherein the substrate treatment comprises the steps of grinding and polishing a titanium substrate to be in a mirror surface state and performing ultrasonic cleaning; and the magnetron sputtering deposition process comprises the steps that a deposition chamber is vacuumized to a preset vacuum degree, a substrate is heated, surface impurities are removed through pre-sputtering, nitrogen is introduced under the condition of fixed power, a TiZrNbTaW coating and a TiZrNbTaWN 0.75 nitridation coating are alternately deposited, and the TiZrNbTaW Nx composite coating is formed. The method overcomes the defect of high cost of an existing precious metal protective coating in the field of proton exchange membrane electrolyzed water, provides a protective coating with corrosion resistance and conductivity, and is suitable for being applied to large-scale industrial production.

The invention discloses an aerosol deposition spraying system for particle online grading and a high-density coating preparing method.The system comprises an aerosol generating chamber, a grading device, a nozzle and a deposition chamber, the grading device is arranged between the aerosol generating chamber and the deposition chamber, and the nozzle is arranged in the deposition chamber; the aerosol generation chamber is used for mixing high-pressure carrier gas and raw material powder to form aerosol; the classifier is used for screening and intercepting powder particles and soft aggregates of which the particle sizes exceed a preset size in the aerosol output by the aerosol generation chamber; the nozzle is used for spraying powder particles in the aerosol screened by the classifier to the surface of a base material in the deposition chamber; and the deposition chamber is used for enabling the raw material powder in the aerosol to deposit a required film layer on the surface of the to-be-sprayed base material through a chemical gas phase reaction in a low-pressure environment so as to realize spraying of the to-be-sprayed base material. The method can effectively reduce the grain size in the coating and improve the density of the coating.

A layered thermite composite includes alternating layers of metal oxide and reducing metal deposited upon a substrate. A fuzzy interface layer between each metal oxide layer and reducing metal layer includes reducing metal, reducing metal oxide, and metal oxide at least partially intermixed therein. The fuzzy interface layer forms while moving between chambers in a multi-chamber deposition process which minimizes exposure of the reducing metal to oxygen while moving between chambers. The fuzzy interface layer is not expected to grow in thickness after deposition. The combination of the relative thinness of the fuzzy interface layer as well as the presence of reactants as well as reducing metal oxide maintains the sensitivity of the layered thermite structure to mechanical ignition if the structure is used within a primer.

Substrate processing chamber gas distribution assemblies and methods utilizing of processing substrates using the same are described. The gas distribution assembly includes an edge ring having a plurality of edge ring openings disposed on the outer peripheral portion and an inner pumping liner including a pumping liner wall concentric with the edge ring and an outer pumping liner wall, the inner pumping liner wall and the outer pumping liner wall defining a pumping liner, the inner pumping liner wall having a plurality of inner pumping liner wall openings. Rotation of the edge ring provides in situ flow conductance through the pumping liner.

The embodiment of the invention provides vapor deposition equipment, which comprises a deposition chamber, a gas inlet pipe, a gas outlet pipe, a gas inlet pipe and a gas outlet pipe, the at least one bearing platform is arranged in the deposition chamber and is suitable for bearing a wafer; the spraying device is arranged in the deposition chamber, is opposite to the bearing platform, is communicated with the opening and is suitable for spraying reaction gas to the surface of the wafer so as to form a deposition film on the surface of the wafer; the heating device is arranged below the corresponding bearing platform and is suitable for providing heat for the corresponding wafer; the heating device comprises a plurality of heating elements, the heating elements are connected with different power sources, and voltage values and reaction gas parameters of the power sources connected with the heating elements, resistance values of the corresponding heating elements, physical parameters of the deposited thin film, the distance between the deposited thin film and the center position of the corresponding bearing platform, the initial temperature and the deposition time are related. By adopting the equipment, the uniformity of the thickness of the film deposited on the surface of the wafer can be improved.

The utility model relates to atomic layer deposition processing equipment, which comprises a reaction cavity, an atomic layer deposition module and a moving unit, the reaction chamber comprises an upper part, a lower part and a deposition chamber formed by the upper part and the lower part. The atomic layer deposition module comprises an upper spraying seat and a lower spraying seat, the upper spraying seat is arranged on the upper portion and located in an upper space, the lower spraying seat is arranged on the lower portion and located in a lower space and is separated from the upper spraying seat, and a workpiece to be machined is clamped between the upper spraying seat and the lower spraying seat. The moving unit is connected with the atomic layer deposition module. The moving unit drives the atomic layer deposition module to turn over so that the atomic layer deposition module can be switched between a first deposition mode and a second deposition mode.

The application relates to a deposition chamber structure and an MPCVD device, and belongs to the field of diamond synthesis devices. The technical scheme is as follows: a deposition chamber structure comprises a base, a tubular quartz window is fixedly arranged on the base, an upper cover is sealingly connected above the quartz window, a metal ring is arranged outside the quartz window, a plurality of horizontally arranged and vertically arranged microwave feeding slits are arranged in the middle region of the metal ring, a resonant metal cavity is arranged outside the middle region of the metal ring, the resonant metal cavity is used for being connected with a microwave source, a growth base capable of multi-stage lifting is arranged in the quartz window, the dimension of microwave feeding is increased, a discharge area is coupled above the growth base to form a plasma with the characteristics of large size, uniform stability and high energy density, the growth base can be lifted in multiple stages, the deposition quality of a growth sample is optimized, the deposition area of the growth sample is expanded, and preparation of a high-quality large-size diamond crystal is realized.

Disclosed in the present invention are a thin film deposition device and a deposition method, relating to the technical field of semiconductors. The thin film deposition device comprises an ALD main body, a hafnium source filter, and a hafnium source pipe. Two ends of the hafnium source filter are respectively connected to the ALD main body and the hafnium source pipe; the ALD main body has a deposition chamber, and the hafnium source pipe is in communication with the deposition chamber via the hafnium source filter; and the hafnium source pipe is used for introducing hafnium(IV) chloride gas into the deposition chamber, and the hafnium source filter is used for filtering hafnium(IV) chloride particles from the hafnium(IV) chloride gas. The thin film deposition device provided in the present invention can significantly improve the deposition quality of a hafnium(IV) oxide thin film.

The invention discloses a thin film deposition sample table and a thin film deposition chamber, relates to the field of semiconductor process equipment, and aims to solve the problems of slow temperature change and long process time of a sample on the sample table in the chamber. The thin film deposition sample table comprises a bearing disc used for bearing and placing a sample; the refrigeration pipe is arranged in the bearing disc and is used for cooling the bearing disc; the heat-conducting plate is arranged at the bottom of the bearing disc; the heating part is arranged in the heat conduction plate and used for heating the heat conduction plate and transferring generated heat to the bearing disc through the heat conduction plate. A sample to be processed is placed on the bearing disc, the cavity is closed for thin film deposition, when the sample needs to be heated, heating is conducted through the heating component, and when the sample needs to be cooled, cooling is conducted through the cooling pipe, so that the temperature change requirement of the sample in the cavity is met, and the process time of thin film deposition is shortened.

Thermal bases for gas distribution assemblies, gas distribution assemblies incorporating the thermal bases, and process chambers incorporating the gas distribution assemblies are described. The thermal bases have an annular slit formed in the front surface of the thermal base. The annular slit forms a boundary between the inner portion and outer portion of the thermal base. Processing methods using the thermal base for temperature uniformity improvement are also described.

Chemical fiber yarn coating equipment comprises an unwinding chamber, a first tension chamber, a deposition chamber, a second tension chamber and a winding chamber which are sequentially arranged from left to right, and an unwinding wheel wound with chemical fiber yarn is arranged in the unwinding chamber; a first tension wheel is arranged in the first tension chamber; a deposition device used for coating the chemical fiber yarn conveyed by the first tension chamber is arranged in the deposition chamber; a second tension wheel is arranged in the second tension chamber; a winding wheel for winding the coated chemical fiber yarns is arranged in the winding chamber; the chemical fiber yarn is kept in a tight state through the first tension wheel and the second tension wheel in the whole conveying process. The chemical fiber yarns are deposited and coated by the deposition device in the transmission process of the chemical fiber yarns in the deposition chamber, so that a nano-scale film layer is deposited and coated on the micron-scale chemical fiber yarns. According to the chemical fiber yarn coating equipment, the chemical fiber yarns can be coated with ultrathin film layers, so that new functions are added on the basis that the physical and chemical characteristics of the chemical fiber yarns maintain the original mechanical characteristics.

The present disclosure relates to a processing tool that includes a first wafer-mounting frame and a second wafer-mounting frame. The first wafer-mounting frame is configured to retain a target wafer. The second wafer-mounting frame is configured to retain a masking wafer. The masking wafer includes a mask pattern made up of a number of openings passing through the masking wafer to correspond to a predetermined deposition pattern to be formed on the target wafer. A deposition chamber is configured to receive the first and second wafer-mounting frames, when the first and second wafer-mounting frames are clamped together to retain the target wafer and the masking wafer. The deposition chamber includes a material deposition source configured to deposit material from the material deposition source through the number of openings in the mask pattern to form the material in the predetermined deposition pattern on the target wafer.

Material layer deposition chamber (100) comprising: a boundary shielding structure (102); a wafer holder (110) configured to hold at least one wafer in the confinement shield structure (102); a target support structure (112) disposed above the wafer holder (110) on an opposite side of the confinement shield structure (102), the target support structure (112) configured to hold a target (114); a collimator (106) disposed in the confinement shielding structure (102) between the wafer holder (110) and the target support structure (112); an electrical power source (124, 126) connected to the collimator (106) for supplying electrical power to the collimator (106), a direct current electrical source (120) connected to the target support structure (112) for supplying electrical current to the target (114); and a control system (140) for controlling the current source (124, 126) of the collimator (106) and the DC current source (120) of the target support structure (112) such that the electrical current is selectively supplied to the target (114) and / or the collimator (106) in order to use the collimator (106) and the target (114) sequentially as a sputtering target for depositing a layer of material on the wafer.

An on-line film thickness measuring device and an on-line film thickness measuring method are provided. The on-line film thickness measuring device is used to be installed on a deposition chamber of vapor phase transport deposition. The deposition chamber is provided with a transparent window. The on-line film thickness measuring device includes a fixing frame, a measuring point positioning device, a film thickness tester, a first motion device and a second motion device. The fixing frame is installed on the deposition chamber. The measuring point positioning device has a light emitter and a light receiver. The film thickness tester has a detection head and a built-in standard distance measurement. The first motion device is configured to: drive the measuring point positioning device and the film thickness tester so that the point in the triangulation is on the axis of the detection head and the first motion device stops driving. The second motion device is configured to: based on the distance, the position of the detection head relative to the light emitter before movement, and the standard distance measurement, the second motion device controls the film thickness tester so that the film thickness tester is at a position in the height direction that is at a distance of the standard distance measurement from the point on the axis of the detection head, and measures the film thickness of the coating.

This invention provides a PVD-grown undoped ε-Ga₂O₃ thin film and its preparation method. The preparation method includes the following steps: Step S1, preparing a substrate and target material, and placing them in the main deposition chamber of a physical vapor deposition (PVD) apparatus; Step S2, heating the substrate to above 650°C, introducing oxygen as the growth atmosphere gas, and using a gallium oxide target material with a tin atomic ratio of 0.5-2.5% to deposit a first thin film on the substrate; Step S3, depositing an aluminum oxide layer as a diffusion barrier layer on the surface of the first thin film; Step S4, using a pure gallium oxide target material, depositing a thin film on the surface of the aluminum oxide layer; cooling to room temperature to obtain the undoped ε-Ga₂O₃ thin film. The undoped ε-Ga₂O₃ photodetector prepared by the pulsed laser deposition system of this invention has a much higher PDCR value than tin-doped ε-Ga₂O₃ devices.

A method and apparatus for processing semiconductor substrates is described herein. The apparatus includes one or more growth monitors disposed within an exhaust system of a deposition chamber. The growth monitors are parameteric resonance monitors and are configured to measure the film thickness grown on the growth monitors while a substrate is being processed within the deposition chamber. The growth monitors are connected to a controller, which adjusts the heating apparatus and gas flow apparatus settings during the processing operations. Measurements from the growth monitors as well as other sensors within the deposition chamber are used to adjust processing chamber models of the deposition chamber as substrates are processed therein.

The utility model discloses a modularized rain sewage diversion box with a self-cleaning function, which comprises a diversion rainwater box, a module partition plate is correspondingly arranged in the diversion rainwater box, and the interior of the diversion rainwater box is divided into a precipitation cavity and a filtering treatment cavity by the module partition plate. According to the utility model, the interior of the diversion rainwater tank is divided into the precipitation cavity and the filtering treatment cavity by the module partition plate for respectively precipitating and filtering, so that reclaimed water and clean water can be conveniently treated and used, and the two backwashing cleaning pieces can be externally connected with an external water source for respectively backwashing the precipitation cavity and the filtering treatment cavity; the water filtering part and the flow guide control part are not prone to being blocked, dirt and impurities can be circularly cleaned and filtered through the filtering and cleaning tank, water is saved while self-cleaning is convenient, the device is convenient to carry out modularized split-flow water outlet, reclaimed water outlet and clean water outlet, the application range is large, the self-cleaning backwashing effect is good, cleaning is convenient, and water is saved.

The utility model provides an edge ring flatness detection device which is applied to a vapor deposition chamber, the vapor deposition chamber comprises a base and an edge ring located at the edge of the base, a heater is arranged in the base and is used for heating the base, and the edge ring flatness detection device comprises a detection main body and a control device, the contact indication structure surrounds the edge of the detection main body; wherein the projection of the detection main body along the vertical direction coincides with the projection of the base along the vertical direction; the positioning rotating device is positioned on the detection main body and is used for positioning the detection main body to a preset position on one side, deviating from the heater, of the base, and the outer edge of the detection main body is matched with the outer edge of the base at the preset position; and the detection main body is rotated at the preset position. According to the embodiment of the invention, the flatness of the edge ring can be detected, so that the deposition effect of substrate film deposition is improved.