60 results about "Deposition chamber" patented technology

This invention provides a PVD-grown undoped ε-Ga₂O₃ thin film and its preparation method. The preparation method includes the following steps: Step S1, preparing a substrate and target material, and placing them in the main deposition chamber of a physical vapor deposition (PVD) apparatus; Step S2, heating the substrate to above 650°C, introducing oxygen as the growth atmosphere gas, and using a gallium oxide target material with a tin atomic ratio of 0.5-2.5% to deposit a first thin film on the substrate; Step S3, depositing an aluminum oxide layer as a diffusion barrier layer on the surface of the first thin film; Step S4, using a pure gallium oxide target material, depositing a thin film on the surface of the aluminum oxide layer; cooling to room temperature to obtain the undoped ε-Ga₂O₃ thin film. The undoped ε-Ga₂O₃ photodetector prepared by the pulsed laser deposition system of this invention has a much higher PDCR value than tin-doped ε-Ga₂O₃ devices.

The application discloses a method for dynamically and continuously preparing a high-strength and stable ultrathin tin-based protective layer on a copper wire and a copper wire with the high-strength and stable ultrathin tin-based protective layer. The method comprises the following steps: the copper wire enters a deposition chamber through a plurality of vacuum differential pressure sealing transition chambers, an ultrathin nanocrystalline coating is deposited by using a Sn-Ge alloy target with a mass fraction of Ge of 0.2-0.6 wt%, then the ultrathin nanocrystalline coating is treated by on-line bombardment processing in an adjacent vacuum chamber by using 20-80 eV Ar / N2 mixed low-energy plasma, and finally the copper wire is taken out through the plurality of vacuum chambers and is wound on a take-up reel, so that the preparation is completed. Through the synergistic effect of Ge element pinning nanocrystalline and plasma surface layer densification, the unity of coating structure stability, tin whisker inhibition and oxidation resistance is realized, the conductivity of the copper wire is not substantially reduced, the dynamic and continuous production is adapted, and the method has relatively high industrial practicability.

A method for processing a substrate includes positioning a silicon substrate in a deposition chamber. One or more intermediate layers are deposited on a surface of the silicon. The one or more intermediate layers can include strontium, which combines with the silicon to form strontium silicide. Alternatively, the one or more intermediate layers comprise germanium. A layer of amorphous strontium titanate is deposited on the one or more intermediate layers in a transient environment in which oxygen pressure is reduced while temperature is increased. The substrate is then exposed to an oxidizing and annealing atmosphere that oxidizes the one or more intermediate layers and converts the layer of amorphous strontium titanate to crystalline strontium titanate.

This invention discloses a deposition apparatus, including a deposition chamber with a deposition cavity inside. The deposition chamber has an inlet for single-atom or cluster particles to enter the deposition cavity, and a nozzle is provided on the inlet. The deposition cavity has a mounting position for mounting a deposition carrier, and an extraction port for connecting a vacuum pump to create a vacuum in the deposition cavity. The nozzle of this invention features a gradually decreasing inner diameter in the second cavity, accelerating the particles to form a high-speed jet, enhancing the bonding force with the deposition carrier, reducing detachment, and ensuring deposition stability and device reliability. The bottom wall, side walls, and end cap of the deposition chamber are removable and equipped with a sealing structure, facilitating sampling, cleaning, and maintenance, and reducing operational difficulty. The third groove on the mounting platform positions the carrier, and the fourth groove facilitates separation, improving ease of handling. The extraction port maintains a vacuum environment and removes unbound particles, ensuring deposition quality.

This invention discloses a low-temperature stirred deposition apparatus, comprising a reaction chamber with a reaction cavity within it. The reaction chamber is provided with an inlet for single-atom or cluster particles to enter the reaction cavity. An air inlet and an air outlet communicating with the reaction cavity are provided on the reaction chamber. A deposition chamber for mixing single-atom or cluster particles with powder is provided within the reaction cavity. A cooling mechanism is provided between the deposition chamber and the reaction cavity to cool the deposition chamber. A stirring mechanism is also provided between the deposition chamber and the reaction chamber to ensure uniform mixing of single-atom or cluster particles with powder. This invention achieves stable, deep low-temperature cooling of the deposition chamber through the cooling mechanism, promoting the growth of single atoms / clusters to precisely control particle size, while simultaneously stabilizing particle motion and reducing adhesion loss on the deposition chamber wall. The stirring mechanism solves the problem of poor coating quality in traditional devices, making it highly practical.

The application discloses a water-cooled plate and a laser thereof, and relates to the technical field of water-cooled plates, in particular to a water-cooled plate and a laser thereof. The water-cooled plate comprises a plate body, at least one deposition chamber is arranged in the plate body, and the deposition chamber is communicated with a cooling channel in the plate body and used for containing target particles carried by cooling water. The water-cooled plate can effectively intercept target particles such as silt, debris and scale in the cooling water, avoid the target particles from being accumulated and blocked in the narrow cooling channel, ensure the normal circulation of the cooling water in the water-cooled plate, and provide stable and continuous cooling effect for the laser.

The disclosure relates to a method of producing an intrinsic or doped transition metal dichalcogenide film comprising: providing a substrate in a deposition chamber; providing a reducing environment and an excess of chalcogen in the deposition chamber; and forming the intrinsic or doped transition metal dichalcogenide film on a surface of the substrate. The transition metal may be Mo or W, and the chalcogen may be S, Se, or Te. The reducing environment may be a hydrogen rich environment.

The present invention relates to a thermal radiation trap for measuring the internal temperature of a chamber, and more specifically, to a thermal radiation trap for accurately and stably measuring the internal temperature of a deposition chamber, and even more specifically, to a thermal radiation trap for measuring the internal temperature of a chamber that provides a thermal radiation trap in the form of a deep groove formed inside a deposition chamber and a method for measuring temperature using the same. According to the present invention, the effect of enabling stable temperature measurement is provided by minimizing the influence of temperature deviation on the chamber surface. In addition, it provides the effect of being able to measure a constant internal temperature without being affected by temperature changes occurring during the deposition process.

Embodiments of the present disclosure provide a display device and a method to manufacture the display device. The method includes forming a first electrode on a substrate, forming a pixel-defining layer on the substrate, where the pixel-defining layer includes an opening that exposes at least a portion of an upper surface of the first electrode, forming a light-emitting layer on the upper surface of the first electrode, and forming a second electrode on the light-emitting layer and the pixel-defining layer using spatial atomic layer deposition (spatial ALD), where the second electrode includes a first sub-electrode and a second sub-electrode disposed on the first sub-electrode, and where the second electrode is formed in a deposition chamber.

The invention relates to a method for manufacturing a receiving substrate to form a composite substrate, comprising a step of supplying a base substrate, a step of deposition in a deposition chamber of an electrically charge-trapping layer in contact with the base substrate. The trapping layer comprises 40% to 80% silicon atoms, 0.1% to 45% oxygen atoms, and 0.2% to 50% nitrogen atoms. The deposition step of the trapping layer uses a precursor gas mixture. The mixture comprises a silicon gas, an oxygen gas, and a nitrogen gas. The nitrogen gas is ammonia or a set of molecules that form ammonia in the deposition chamber during the deposition step. (See Figure 1A for the abstract.)

The present application relates to the technical field of coating, and particularly provides a diamond deposition device, wherein a deposition chamber is arranged in the deposition device, and the deposition device further comprises a magnetic control unit, which is used for generating a variable magnetic field in the deposition chamber, and the magnetic field controls the ion trajectory in the deposition chamber when changing, so that the ion trajectory is directed to bombard the substrate surface of a workpiece; the present application cooperatively regulates the magnetic field distribution through multiple groups of coils, drives the carbon ions to direct bombard the substrate surface, effectively improves the deposition rate of the diamond film and the uniformity of the film distribution, and improves the quality of the diamond coating.

This invention discloses a deposition apparatus and a vapor deposition device, relating to the field of semiconductor technology. The deposition apparatus includes a base frame, a deposition chamber, a drive mechanism, a transmission ring, an induction coil, and a detection element. The deposition chamber is disposed within the base frame, the drive mechanism is mounted on the base frame and connected to the transmission ring, the transmission ring is sleeved outside the deposition chamber, the induction coil is connected to the transmission ring, and the detection element is mounted in the deposition chamber and electrically connected to the drive mechanism. The deposition chamber is used to deposit material onto a wafer, the detection element is used to detect the uniformity of the deposited film thickness, and the drive mechanism, when the film thickness is uneven, drives the induction coil to rotate to the corresponding position where the film thickness is thinner via the transmission ring. The induction coil generates an alternating magnetic field to accelerate deposition. The deposition apparatus provided by this invention can compensate for the thickness of thinner areas of the film formed on the wafer surface, improve film uniformity, enhance deposition effect, and ensure product quality.

This invention relates to the field of polycrystalline silicon deposition technology, and more particularly to a polycrystalline silicon deposition nozzle control system based on fluid field control. The system includes: a fluid field monitoring module for real-time acquisition of fluid field distribution data and nozzle parameters at various locations within the polycrystalline silicon deposition chamber; a fluid analysis module for determining the eddy current distribution and / or dead zone distribution within the fluid field based on changes in the fluid field distribution data at various locations within the polycrystalline silicon deposition chamber over a preset time period, and for determining the defect change type; and a nozzle adjustment module for determining a number of associated nozzles based on the eddy current distribution and / or dead zone distribution within the fluid field, and for determining the nozzle adjustment method based on the defect change type and the number of associated nozzles. This invention improves the accuracy of nozzle control and ensures the uniformity of polycrystalline silicon deposition.

The invention discloses thin film deposition equipment, a thin film deposition method and a storage medium. The thin film deposition equipment comprises a deposition box, the inner side wall of which is provided with a sample table used for placing a substrate; the rotating stand is sleeved outside the sample table so as to drive the sample table to laterally rotate; the debugger assembly is arranged on the inner wall of the deposition box, the debugger assembly comprises a sliding rod and a deposition spray head, and the deposition spray head transversely moves in the deposition box along the sliding rod; the controller is configured to control the deposition spray head to transversely move to a first process position at a first distance from the sample table along the sliding rod in the thin film deposition process; and controlling the rotating stand to rotate, so that the deposition spray head rotatably sprays the deposition material to the substrate on the sample table at the first process position. According to the method, the covering uniformity of the deposition material on the surface of the substrate can be improved, so that the film deposition uniformity is improved, the material waste can be effectively reduced, and the process cost is reduced while the high-precision deposition requirement of a semiconductor device is met.

This invention provides a hot-wire coating equipment, belonging to the technical field of photovoltaic cell coating. The hot-wire coating equipment includes a deposition chamber, a first fixing component, a second fixing component, and a claw plate assembly. The first fixing component is fixedly disposed on the inner wall of the deposition chamber. The second fixing component is disposed within the deposition chamber and detachably connected to the first fixing component; the second fixing component is used to fix the hot wire. The claw plate assembly is disposed within the deposition chamber and is used to grasp the second fixing component and detachably install it onto the first fixing component. The claw plate assembly is also used to detach the second fixing component from the first fixing component. The hot-wire coating equipment provided by this invention eliminates the need to stop the machine to open the deposition chamber during hot wire replacement and eliminates the need to perform a vacuuming operation on the chamber after replacement, directly saving time and labor costs and improving coating production efficiency.

A method of selective deposition that includes disposing in a deposition chamber a substrate having metallic and dielectric surfaces. The deposition chamber is connected to a bubbler that contains a 1,2,3-triazolium salt and / or a carboxylate zwitterion form of the 1,2,3-triazole, which are precursors to free 1,2,3-triazol-5-ylidene. By heating the bubbler, gaseous free 1,2,3-triazol-5-ylidene was generated which moved into the deposition chamber, where the 1,2,3-triazol-5-ylidene selectively chemisorbed onto the metallic surface(s).

This application relates to semiconductor technology, specifically to a replenishment device for supplying heat exchange medium to cooling equipment configured in a vapor deposition chamber. The device includes a control system and an execution system. The control system determines the appropriate type and flow rate of automatically replenished heat exchange medium based on the coolant conductivity and coolant level in the cooling equipment, and generates a control signal based on the medium type and flow rate. The execution system automatically executes the corresponding heat exchange medium replenishment strategy based on the control signal. Firstly, this application eliminates manual inspection and manual addition of heat exchange medium, reducing the workload of personnel. Secondly, the embodiments of this application determine the coolant medium type based on conductivity conditions, effectively controlling the coolant conductivity while ensuring sufficient coolant supply, avoiding excessively high coolant conductivity that could cause tip discharge, and eliminating potential production hazards in the vapor deposition process.

The application discloses an atomized chemical vapor deposition reaction device and process, which comprises a uniform atomization device, a deposition chamber, a gas floating rotating device and a sampling device, further comprises a gas collection and liquid accumulation device and a graphite carrier stage lifting device, the gas collection and liquid accumulation device is located between the deposition chamber and the graphite carrier stage lifting device, and further comprises a glove box which is communicated with the side wall of the deposition chamber through a sampling channel; the gas collection and liquid accumulation device is adopted to solve the problem that the deposition chamber negative pressure is unstable due to the pipeline blockage caused by the condensation and liquefaction of the precursor, the sampling channel is arranged on the side wall of the deposition chamber, and the glove box is arranged to solve the problem that the precursor mixed gas is diffused to pollute the environment during the sampling process, so that the deposition reaction process environment in the deposition chamber is ensured to be constant, and the production efficiency and product quality of industrial production are greatly improved.

This application relates to an OVD deposition control method and control device. The method for controlling the density of OVD deposited powder rods includes: acquiring a preset density range, a deposition point temperature threshold, and real-time process parameters within the deposition chamber. The real-time process parameters include at least the actual deposition point temperature, the actual distance between the torch and the deposition point, the actual density of the powder rod, and the chamber pressure. The method maintains a constant chamber pressure and determines whether the actual density of the powder rod is within the preset density range. If not, the actual deposition point temperature is adjusted until the actual density of the powder rod is within the preset density range, or the actual deposition point temperature reaches the deposition point temperature threshold. If the actual deposition point temperature reaches the deposition point temperature threshold, but the actual density of the powder rod is still outside the preset density range, the actual distance between the torch and the deposition point is adjusted until the actual density of the powder rod is within the preset density range. This solves the technical problems of increased scrap rate and reduced production efficiency in the prior art.

A method for decorating a horology component with white plating. The method includes preparing the horology component, depositing a metallic adhesion layer over the entire horology component in a deposition chamber via physical vapour deposition, depositing an aluminium diffusion layer over the entire component under a flow of reagent gas such that the aluminium layer is deposited in the form of a faceted crystalline structure via physical vapour deposition to a desired thickness, depositing a hard layer on this aluminium layer which protects it mechanically but preserves its faceted texture via physical vapour deposition, depositing a thin, highly reflective metallic layer on this hard layer via physical vapour deposition, and lastly, depositing a transparent layer for protection and / or increased reflection on this reflective layer using the ALD method.

This invention relates to the field of semiconductor thin film deposition and vacuum coating process control, specifically to a method for controlling the backside deposition of AuGe alloy. The method is applied to a deposition chamber equipped with an edge airflow adjustment device and an electromagnetic confinement coil. The method includes: acquiring real-time gas pressure data and real-time plasma impedance data of the edge region; extracting gas pressure fluctuation signals and plasma impedance signals to generate an initial state dataset; extracting high-frequency noise features based on the initial state dataset to generate an edge flow field instability index characterizing the degree of AuGe atom free cluster accumulation; calculating the critical time to reach a preset failure threshold based on this index and determining a target control strategy; and dynamically adjusting the edge protection airflow parameters and confinement magnetic field parameters according to the target control strategy to reduce the accumulation degree and prevent abnormal deposition of AuGe alloy on the backside.

This invention discloses a substrate interface pretreatment method for anisotropic magnetoresistive thin film deposition, belonging to the field of pre-deposition processing technology for thin film deposition. The method includes: (1) wiping the substrate surface with dilute hydrofluoric acid; (2) placing the substrate into a deposition chamber and evacuating it to a vacuum level ≤1×10⁻⁶. ‑6 Torr; (3) Introduce a protective atmosphere and perform a stepwise heating treatment on the substrate, including at least three steps: 100 ℃, 300 ℃, and 500 ℃. Hold each step for 20 min to 30 min to allow hydrofluoric acid to remove the oxide layer in situ and activate the surface; (4) Cool down to room temperature, stop the gas supply, and evacuate. This invention uses a synergistic process of wiping with dilute hydrofluoric acid and stepwise heating in the chamber to sequentially complete the removal of physically adsorbed water, selective reaction of the oxide layer, and activation of surface polarization bonds. The average thickness of the remaining oxide layer is ≤5 nm, and the density of surface active polarization bonds is increased by more than 10 times. The entire process is carried out in situ to avoid secondary contamination and significantly enhances the adhesion and crystal quality of the subsequently deposited film.

This invention discloses a method for preparing nitride thin films, belonging to the field of advanced functional thin film material preparation technology. The method employs pulsed laser deposition technology and includes the following steps: placing an alloy target material prepared according to the stoichiometric ratio of the target thin film in a deposition chamber, evacuating to a background vacuum ≤, heating a single-crystal substrate to 400-1000℃, turning on a 13.56MHz radio frequency ion source and adjusting the power to 50-500W for ionizing nitrogen gas; injecting ammonia or nitrogen gas with a purity ≥99.999% into the chamber through a high-speed pulse valve with a response delay ≤50μs and an opening / closing time ≤200μs, precisely synchronized with the laser pulse electronic signal; the high-energy metallic plasma plume generated by the laser pulse ablation of the alloy target material undergoes an instantaneous gas-phase reaction with the synchronously injected reactive gas, while simultaneously bombarding the substrate surface with a high-energy nitrogen ion beam, controlling the deposition parameters to deposit a nitride thin film on the substrate, which can be cooled after in-situ annealing.

The application provides an in-situ cleaning and monitoring method for an APCVD tray system gas deposition chamber, relates to the technical field of semiconductors, and comprises the following steps: performing ellipsometric spectral scanning on multiple positions of the inner wall of the chamber by an ellipsometric measuring device, and calculating the initial deposit thickness; calculating the flow field distribution based on the thickness and the geometric structure of the chamber, and identifying the area with insufficient cleaning rate; setting a compensation gas injection port upstream of the area; periodically scanning during the cleaning process, and judging whether the deposit is cleaned to the substrate interface by the thickness evolution curve and the change of the optical constant. The method can accurately monitor the cleaning process, prevent the substrate from being excessively etched, and improve the cleaning uniformity and efficiency.

The application relates to an industrial atomic layer deposition chamber structure, which comprises a deposition chamber shell, a support is fixedly connected to the lower cavity of the deposition chamber shell, and the upper end of the support is provided with a support structure; a blowing shell is arranged in the middle part of the support, a gas supply pipeline mechanism is connected to the lower part of the blowing shell, and gas is supplied to the inside of the blowing shell. The equipment provided by the application is used for loading or taking materials, a gas-tight door is opened, the left material is firstly loaded or taken, then an electric telescopic rod is started, a support plate is driven to move upward through a transmission rod, so that the roller supports the support structure upward, then a motor is started to drive a transmission gear to rotate, so that a gear ring is driven to rotate, the support structure is rotated by 180 degrees, the right side of the support structure is transferred to the left side, and the left side is loaded or taken, so that the loading and taking of the whole structure are more convenient.

The utility model relates to the field of deposition device especially relates to high temperature resistant polycrystal membrane deposition device, including bottom plate, the upper end of bottom plate is fixedly connected with deposition chamber, the upper end of deposition chamber is fixedly connected with the fender and fixed block, one side of deposition chamber is the opening, and the one side of deposition chamber places the sealing plate, the utility model discloses through setting up fender and fixed block on deposition chamber upper end, and the frame shape structure cooperation of both and sealing plate forms the shell system of high temperature resistance, can effectively resist the thermal deformation under high temperature environment, promotes the device structure stability, and the design of the heat conduction cylinder and the limiting disc in heating mechanism can realize the uniform heat conduction to the base, further improved the stability of deposition process, and locking mechanism drives the baffle and sealing plate edge close adhesion through the first electric cylinder, ensures the high air tightness of chamber, and the exhaust mechanism can discharge reaction exhaust gas in time, and the gas generating mechanism accurately control reaction gas flow, is favorable to the deposition of polycrystal membrane.

The present application relates to the field of semiconductor thin film deposition and vacuum coating process control, specifically to a AuGe alloy coating back deposition control method, applied to a deposition chamber configured with an edge airflow adjusting device and an electromagnetic restraining coil, comprising: obtaining real-time air pressure data and real-time plasma impedance data of the edge area, extracting air pressure fluctuation signals and plasma impedance signals, and generating an initial state data set; extracting high-frequency noise features based on the initial state data set, and generating an edge flow field instability index representing the accumulation degree of AuGe atomic free clusters; based on the index, calculating the critical time of reaching the preset failure threshold and determining the target control strategy; dynamically adjusting the edge protection airflow parameters and the restraining magnetic field parameters according to the target control strategy, so as to reduce the accumulation degree and prevent abnormal deposition of AuGe alloy on the back.

The present disclosure generally provides methods of forming contact structures on semiconductor substrates. A metal layer is formed on a surface of a contact structure by maintaining a first temperature of a substrate and providing a first carrier gas, a first metal-containing precursor, and a first hydrogen-containing precursor to a first deposition chamber. The contact structure includes a feature. The feature includes an opening with a bottom surface and sidewalls, which comprise a dielectric material. The metal layer is formed over the sidewalls and the bottom surface and the metal layer comprises a metal and a silicon containing material. The metal layer is exposed to a metal chloride containing precursor to remove a top portion of the metal layer from the sidewalls. A metal gap fill material is deposited over the metal layer to fill the feature formed in the surface of the semiconductor substrate.

This invention belongs to the field of coating, specifically relating to an oleophobic film preparation system and method, including a fixing structure and a deposition chamber. The fixing structure is used to adapt to and fix a smart device. When the fixing structure is installed in the deposition chamber, the screen of the smart device is located inside the deposition chamber. The deposition chamber is equipped with a precursor control module, a power supply module, and a vacuum module. The precursor control module is connected to the deposition chamber and can introduce a fluorine-containing precursor and background gas into the deposition chamber. The power supply module is connected to the deposition chamber and is used to feed electromagnetic energy into the deposition chamber. The vacuum module is connected to the deposition chamber and is used to adjust the gas pressure state inside the deposition chamber. This invention provides an oleophobic film preparation system and method, the purpose of which is to achieve the repair of oleophobic films and overcome the shortcomings of existing repair methods.

The application relates to an epitaxial wafer stripping device, which comprises a plurality of chambers, the plurality of chambers at least comprising a stripping chamber, a cleaning and drying chamber, a heating chamber and a deposition chamber; the epitaxial wafer is in a vacuum environment during transportation among different chambers; the stripping chamber is used for stripping a substrate from the epitaxial wafer; the cleaning and drying chamber is used for cleaning and drying the stripped epitaxial wafer; the heating chamber is internally provided with a heating device; the heating device is used for heating the cleaned and dried epitaxial wafer, so as to remove moisture and reduce the deposition time of the epitaxial wafer; and the deposition chamber is used for deposition based on the heated epitaxial wafer. The application can effectively improve the performance of a semiconductor device.