373 results about "Deposition chamber" patented technology

A method and apparatus for processing semiconductor substrates is described herein. The apparatus includes one or more growth monitors disposed within an exhaust system of a deposition chamber. The growth monitors are quartz crystal film thickness monitors and are configured to measure the film thickness grown on the growth monitors while a substrate is being processed within the deposition chamber. The growth monitors are connected to a controller, which adjusts the heating apparatus and gas flow apparatus settings during the processing operations. Measurements from the growth monitors as well as other sensors within the deposition chamber are used to adjust processing chamber models of the deposition chamber as substrates are processed therein.

The invention discloses a thin film deposition cavity with uniform temperature distribution. The thin film deposition cavity comprises a heater, a back plate assembly, a cavity side wall, a cavity bottom plate and a plurality of temperature compensation devices, the back plate assembly comprises a gas inlet and a gas flow homogenizing plate; a vacuum pump interface is arranged on the cavity bottom plate; the temperature compensation device is arranged on the inner side of the side wall of the cavity, or the temperature compensation device is embedded in the side wall of the cavity; the temperature compensation device has the orientation and the light intensity of illumination radiation which can be independently adjusted. The multiple temperature compensation devices are arranged, illumination radiation heating is conducted on the low-temperature area on the front face of the wafer, so that temperature compensation is conducted on the wafer, the temperature of the surface of the wafer in the thin film deposition process is more uniform, and the thin film deposition quality is improved.

A deposition apparatus comprises: an infeed chamber; a preheat chamber; a deposition chamber; and optionally at least one of a cooldown chamber and an outlet chamber. At least a first of the preheat chamber and the cooldown chamber contains a buffer system for buffering workpieces respectively passing to or from the deposition chamber.

The invention discloses a cleaning method and a cleaning system for a deposition chamber. The cleaning method comprises the following steps that dissociated NF3 is introduced from the top of a cavity so as to at least clean tungsten residues in the upper half area in the cavity for one time; stopping introducing the dissociated NF3, and introducing dissociated O2 from the top of the chamber so as to at least clean the carbon residues in the upper half area for one time; and dissociated NF3 is introduced from the top and the bottom of the cavity at the same time, so that the tungsten residues and the carbon residues in the upper half area and the lower half area in the cavity are subjected to secondary cleaning. By executing the steps, the problem that the cleaning effect on the carbon residues in the chamber is poor due to combination of nitrogen plasma and oxygen plasma caused by simultaneous dissociation and introduction of NF3 and O2 into the chamber can be solved, so that the cleaning effect on the carbon residues is improved, the cleaning time is shortened, and the cleaning efficiency is improved. And the process effect and the process stability of the tungsten carbide thin film in the chamber are further improved.

The invention discloses a double-temperature-zone low-temperature electrostatic adsorption thin film deposition wafer heater, which comprises a heater disc body, an insulating separator, a heater back plate, a base, a flow path leading-out piece and a radio frequency electrode, the heater disc body is a metal disc body provided with an insulating film; at least two flow channels corresponding to the liquid flow paths are arranged in the heater plate body; the liquid flow path is led out of the thin film deposition cavity through the flow path leading-out piece; the metal disc body is electrically connected with a radio frequency power supply and an electrostatic adsorption power supply through the radio frequency electrodes respectively; and the lower end of the base is connected with a lifting driving device. The flat flow channel is suitable for the PECVD process, the working temperature is 160-250 DEG C, heating and temperature control are carried out in a mode that hot oil exchanges heat in the flat flow channel, the problem that in the PECVD process, the temperature of a plate body of a heater continuously rises after radio frequency is started is solved, the temperature of the plate body can be controlled to fluctuate within the range of + / -1 DEG C at the low working temperature, and the stability of the process is met.

The invention discloses an aerosol deposition spraying system for particle online grading and a high-density coating preparing method.The system comprises an aerosol generating chamber, a grading device, a nozzle and a deposition chamber, the grading device is arranged between the aerosol generating chamber and the deposition chamber, and the nozzle is arranged in the deposition chamber; the aerosol generation chamber is used for mixing high-pressure carrier gas and raw material powder to form aerosol; the classifier is used for screening and intercepting powder particles and soft aggregates of which the particle sizes exceed a preset size in the aerosol output by the aerosol generation chamber; the nozzle is used for spraying powder particles in the aerosol screened by the classifier to the surface of a base material in the deposition chamber; and the deposition chamber is used for enabling the raw material powder in the aerosol to deposit a required film layer on the surface of the to-be-sprayed base material through a chemical gas phase reaction in a low-pressure environment so as to realize spraying of the to-be-sprayed base material. The method can effectively reduce the grain size in the coating and improve the density of the coating.

A layered thermite composite includes alternating layers of metal oxide and reducing metal deposited upon a substrate. A fuzzy interface layer between each metal oxide layer and reducing metal layer includes reducing metal, reducing metal oxide, and metal oxide at least partially intermixed therein. The fuzzy interface layer forms while moving between chambers in a multi-chamber deposition process which minimizes exposure of the reducing metal to oxygen while moving between chambers. The fuzzy interface layer is not expected to grow in thickness after deposition. The combination of the relative thinness of the fuzzy interface layer as well as the presence of reactants as well as reducing metal oxide maintains the sensitivity of the layered thermite structure to mechanical ignition if the structure is used within a primer.

Substrate processing chamber gas distribution assemblies and methods utilizing of processing substrates using the same are described. The gas distribution assembly includes an edge ring having a plurality of edge ring openings disposed on the outer peripheral portion and an inner pumping liner including a pumping liner wall concentric with the edge ring and an outer pumping liner wall, the inner pumping liner wall and the outer pumping liner wall defining a pumping liner, the inner pumping liner wall having a plurality of inner pumping liner wall openings. Rotation of the edge ring provides in situ flow conductance through the pumping liner.

The application relates to a deposition chamber structure and an MPCVD device, and belongs to the field of diamond synthesis devices. The technical scheme is as follows: a deposition chamber structure comprises a base, a tubular quartz window is fixedly arranged on the base, an upper cover is sealingly connected above the quartz window, a metal ring is arranged outside the quartz window, a plurality of horizontally arranged and vertically arranged microwave feeding slits are arranged in the middle region of the metal ring, a resonant metal cavity is arranged outside the middle region of the metal ring, the resonant metal cavity is used for being connected with a microwave source, a growth base capable of multi-stage lifting is arranged in the quartz window, the dimension of microwave feeding is increased, a discharge area is coupled above the growth base to form a plasma with the characteristics of large size, uniform stability and high energy density, the growth base can be lifted in multiple stages, the deposition quality of a growth sample is optimized, the deposition area of the growth sample is expanded, and preparation of a high-quality large-size diamond crystal is realized.

Disclosed in the present invention are a thin film deposition device and a deposition method, relating to the technical field of semiconductors. The thin film deposition device comprises an ALD main body, a hafnium source filter, and a hafnium source pipe. Two ends of the hafnium source filter are respectively connected to the ALD main body and the hafnium source pipe; the ALD main body has a deposition chamber, and the hafnium source pipe is in communication with the deposition chamber via the hafnium source filter; and the hafnium source pipe is used for introducing hafnium(IV) chloride gas into the deposition chamber, and the hafnium source filter is used for filtering hafnium(IV) chloride particles from the hafnium(IV) chloride gas. The thin film deposition device provided in the present invention can significantly improve the deposition quality of a hafnium(IV) oxide thin film.

The invention discloses a thin film deposition sample table and a thin film deposition chamber, relates to the field of semiconductor process equipment, and aims to solve the problems of slow temperature change and long process time of a sample on the sample table in the chamber. The thin film deposition sample table comprises a bearing disc used for bearing and placing a sample; the refrigeration pipe is arranged in the bearing disc and is used for cooling the bearing disc; the heat-conducting plate is arranged at the bottom of the bearing disc; the heating part is arranged in the heat conduction plate and used for heating the heat conduction plate and transferring generated heat to the bearing disc through the heat conduction plate. A sample to be processed is placed on the bearing disc, the cavity is closed for thin film deposition, when the sample needs to be heated, heating is conducted through the heating component, and when the sample needs to be cooled, cooling is conducted through the cooling pipe, so that the temperature change requirement of the sample in the cavity is met, and the process time of thin film deposition is shortened.

Thermal bases for gas distribution assemblies, gas distribution assemblies incorporating the thermal bases, and process chambers incorporating the gas distribution assemblies are described. The thermal bases have an annular slit formed in the front surface of the thermal base. The annular slit forms a boundary between the inner portion and outer portion of the thermal base. Processing methods using the thermal base for temperature uniformity improvement are also described.

Material layer deposition chamber (100) comprising: a boundary shielding structure (102); a wafer holder (110) configured to hold at least one wafer in the confinement shield structure (102); a target support structure (112) disposed above the wafer holder (110) on an opposite side of the confinement shield structure (102), the target support structure (112) configured to hold a target (114); a collimator (106) disposed in the confinement shielding structure (102) between the wafer holder (110) and the target support structure (112); an electrical power source (124, 126) connected to the collimator (106) for supplying electrical power to the collimator (106), a direct current electrical source (120) connected to the target support structure (112) for supplying electrical current to the target (114); and a control system (140) for controlling the current source (124, 126) of the collimator (106) and the DC current source (120) of the target support structure (112) such that the electrical current is selectively supplied to the target (114) and / or the collimator (106) in order to use the collimator (106) and the target (114) sequentially as a sputtering target for depositing a layer of material on the wafer.

An on-line film thickness measuring device and an on-line film thickness measuring method are provided. The on-line film thickness measuring device is used to be installed on a deposition chamber of vapor phase transport deposition. The deposition chamber is provided with a transparent window. The on-line film thickness measuring device includes a fixing frame, a measuring point positioning device, a film thickness tester, a first motion device and a second motion device. The fixing frame is installed on the deposition chamber. The measuring point positioning device has a light emitter and a light receiver. The film thickness tester has a detection head and a built-in standard distance measurement. The first motion device is configured to: drive the measuring point positioning device and the film thickness tester so that the point in the triangulation is on the axis of the detection head and the first motion device stops driving. The second motion device is configured to: based on the distance, the position of the detection head relative to the light emitter before movement, and the standard distance measurement, the second motion device controls the film thickness tester so that the film thickness tester is at a position in the height direction that is at a distance of the standard distance measurement from the point on the axis of the detection head, and measures the film thickness of the coating.

This invention provides a PVD-grown undoped ε-Ga₂O₃ thin film and its preparation method. The preparation method includes the following steps: Step S1, preparing a substrate and target material, and placing them in the main deposition chamber of a physical vapor deposition (PVD) apparatus; Step S2, heating the substrate to above 650°C, introducing oxygen as the growth atmosphere gas, and using a gallium oxide target material with a tin atomic ratio of 0.5-2.5% to deposit a first thin film on the substrate; Step S3, depositing an aluminum oxide layer as a diffusion barrier layer on the surface of the first thin film; Step S4, using a pure gallium oxide target material, depositing a thin film on the surface of the aluminum oxide layer; cooling to room temperature to obtain the undoped ε-Ga₂O₃ thin film. The undoped ε-Ga₂O₃ photodetector prepared by the pulsed laser deposition system of this invention has a much higher PDCR value than tin-doped ε-Ga₂O₃ devices.

A method and apparatus for processing semiconductor substrates is described herein. The apparatus includes one or more growth monitors disposed within an exhaust system of a deposition chamber. The growth monitors are parameteric resonance monitors and are configured to measure the film thickness grown on the growth monitors while a substrate is being processed within the deposition chamber. The growth monitors are connected to a controller, which adjusts the heating apparatus and gas flow apparatus settings during the processing operations. Measurements from the growth monitors as well as other sensors within the deposition chamber are used to adjust processing chamber models of the deposition chamber as substrates are processed therein.

The utility model discloses a modularized rain sewage diversion box with a self-cleaning function, which comprises a diversion rainwater box, a module partition plate is correspondingly arranged in the diversion rainwater box, and the interior of the diversion rainwater box is divided into a precipitation cavity and a filtering treatment cavity by the module partition plate. According to the utility model, the interior of the diversion rainwater tank is divided into the precipitation cavity and the filtering treatment cavity by the module partition plate for respectively precipitating and filtering, so that reclaimed water and clean water can be conveniently treated and used, and the two backwashing cleaning pieces can be externally connected with an external water source for respectively backwashing the precipitation cavity and the filtering treatment cavity; the water filtering part and the flow guide control part are not prone to being blocked, dirt and impurities can be circularly cleaned and filtered through the filtering and cleaning tank, water is saved while self-cleaning is convenient, the device is convenient to carry out modularized split-flow water outlet, reclaimed water outlet and clean water outlet, the application range is large, the self-cleaning backwashing effect is good, cleaning is convenient, and water is saved.

The utility model provides an edge ring flatness detection device which is applied to a vapor deposition chamber, the vapor deposition chamber comprises a base and an edge ring located at the edge of the base, a heater is arranged in the base and is used for heating the base, and the edge ring flatness detection device comprises a detection main body and a control device, the contact indication structure surrounds the edge of the detection main body; wherein the projection of the detection main body along the vertical direction coincides with the projection of the base along the vertical direction; the positioning rotating device is positioned on the detection main body and is used for positioning the detection main body to a preset position on one side, deviating from the heater, of the base, and the outer edge of the detection main body is matched with the outer edge of the base at the preset position; and the detection main body is rotated at the preset position. According to the embodiment of the invention, the flatness of the edge ring can be detected, so that the deposition effect of substrate film deposition is improved.

The application discloses a method for dynamically and continuously preparing a high-strength and stable ultrathin tin-based protective layer on a copper wire and a copper wire with the high-strength and stable ultrathin tin-based protective layer. The method comprises the following steps: the copper wire enters a deposition chamber through a plurality of vacuum differential pressure sealing transition chambers, an ultrathin nanocrystalline coating is deposited by using a Sn-Ge alloy target with a mass fraction of Ge of 0.2-0.6 wt%, then the ultrathin nanocrystalline coating is treated by on-line bombardment processing in an adjacent vacuum chamber by using 20-80 eV Ar / N2 mixed low-energy plasma, and finally the copper wire is taken out through the plurality of vacuum chambers and is wound on a take-up reel, so that the preparation is completed. Through the synergistic effect of Ge element pinning nanocrystalline and plasma surface layer densification, the unity of coating structure stability, tin whisker inhibition and oxidation resistance is realized, the conductivity of the copper wire is not substantially reduced, the dynamic and continuous production is adapted, and the method has relatively high industrial practicability.

A method is provided for fabricating a component material for a battery cell. The method comprises the steps of: providing a partially-fabricated battery cell, the partially-fabricated battery cell comprising a substrate having a planar deposition surface consisting of a first face of the substrate and a first battery component layer provided on the planar deposition surface, the substrate having a plurality of further surfaces, the planar deposition surface and the plurality of further surfaces defining the body of the substrate therebetween; wherein: the first battery component layer contains charge-carrying metal species and has an exposed surface; one or more electrically conductive or semi-conductive pathways extend through at least a portion of the substrate, each of the one or more pathways connecting the planar deposition surface to one of the plurality of further surfaces; and the partially-fabricated battery cell is held in position within a deposition chamber by a holding structure and each site of connection between one of the one or more pathways and the holding structure is electrically insulating; the method further comprising the step of depositing a second battery component layer on the first battery component layer, wherein the depositing comprises forming a plasma within the deposition chamber.

The utility model relates to the related technical field of cutting tool machining, in particular to cutting tool surface multi-element nitride chemical vapor deposition equipment which comprises a deposition box, a motor is fixedly installed on the upper side surface of the deposition box, the output end of the motor is fixedly connected with a connecting shaft, and one end of the connecting shaft is fixedly connected with a rotating frame. According to the chemical vapor deposition equipment for the multi-element nitride on the surface of the cutting tool, through the arrangement of the deposition box, a motor, a connecting shaft, a rotating frame, a first connecting rod, a second gear, a third gear, a second connecting rod and a fourth gear, during deposition work, the motor enables the connecting shaft to drive the rotating frame to rotate; at the moment, a second gear drives a first connecting rod and a third gear to rotate, a fourth gear connected with the third gear in a meshed mode drives the second connecting rod to rotate, a rotating block fixedly connected with the lower end of the second connecting rod drives a mounting frame and a tool rest to rotate, and the tool rest rotates with the second connecting rod as the center and meanwhile rotates with a connecting shaft as the center.

A method for processing a substrate includes positioning a silicon substrate in a deposition chamber. One or more intermediate layers are deposited on a surface of the silicon. The one or more intermediate layers can include strontium, which combines with the silicon to form strontium silicide. Alternatively, the one or more intermediate layers comprise germanium. A layer of amorphous strontium titanate is deposited on the one or more intermediate layers in a transient environment in which oxygen pressure is reduced while temperature is increased. The substrate is then exposed to an oxidizing and annealing atmosphere that oxidizes the one or more intermediate layers and converts the layer of amorphous strontium titanate to crystalline strontium titanate.

This invention discloses a deposition apparatus, including a deposition chamber with a deposition cavity inside. The deposition chamber has an inlet for single-atom or cluster particles to enter the deposition cavity, and a nozzle is provided on the inlet. The deposition cavity has a mounting position for mounting a deposition carrier, and an extraction port for connecting a vacuum pump to create a vacuum in the deposition cavity. The nozzle of this invention features a gradually decreasing inner diameter in the second cavity, accelerating the particles to form a high-speed jet, enhancing the bonding force with the deposition carrier, reducing detachment, and ensuring deposition stability and device reliability. The bottom wall, side walls, and end cap of the deposition chamber are removable and equipped with a sealing structure, facilitating sampling, cleaning, and maintenance, and reducing operational difficulty. The third groove on the mounting platform positions the carrier, and the fourth groove facilitates separation, improving ease of handling. The extraction port maintains a vacuum environment and removes unbound particles, ensuring deposition quality.

A method for solventless perovskite deposition. The method comprises loading a lead target and one or more samples adhered to a substrate support into a deposition chamber, pumping to a high vacuum pressure, and filling the deposition chamber with the vapor of a salt precursor to form a perovskite material.

The disclosed technology relates generally to semiconductor manufacturing, and more particularly to precursor delivery in cyclic deposition of vanadium nitride thin films. In one aspect, a method of depositing a vanadium nitride thin film comprises providing a thin film deposition system comprising a vanadium precursor delivery line comprising first and second valves disposed between a final valve and a vanadium precursor source comprising a canister including a liquid vanadium precursor and a volume of gas including vaporized vanadium precursor. The method additionally comprises conditioning the vanadium precursor source, without a substrate in a thin film deposition chamber, by controllably removing a portion of the volume of gas in the canister by sequentially opening the first and second valves. The method additionally comprises disposing the substrate in the thin film deposition chamber and alternatingly exposing the substrate to the vaporized vanadium precursor and a nitrogen precursor.

The present invention belongs to the technical field of ultra-high temperature ceramic materials and discloses a high-purity porous tantalum carbide ceramic, a preparation method thereof, and an application thereof. The present invention comprises the following steps: placing a porous graphite substrate horizontally in a vertical vapor deposition chamber, evacuating the chamber, introducing argon gas, increasing the reaction gas pressure to 10-100 mbar, and heating the graphite substrate to a deposition temperature of the tantalum element; delivering an inorganic tantalum salt and hydrogen into the chamber to deposit the tantalum element in a first region; introducing argon gas into the reaction chamber to increase the reaction gas pressure, increasing the carrier gas flow of the inorganic tantalum salt, and increasing the deposition temperature of the tantalum element to deposit the tantalum element in a second region, and repeating the process to deposit the tantalum element on the porous graphite substrate from the inside out; and after the tantalum element is deposited, heating the high-purity porous graphite substrate to react and obtain tantalum carbide. By adjusting the reaction conditions, the reaction gas flow gradually penetrates the porous material at different depths, and the tantalum is uniformly deposited at different positions.

The utility model belongs to the technical field of metal preparation, and particularly relates to a spray forming device for preparing a dispersion strengthened copper-based material, which comprises a spray deposition chamber, two groups of spray assemblies are arranged above the spray deposition chamber, each group of spray assembly comprises a spray nozzle, each spray nozzle comprises a spray orifice, a spray deposition disc is arranged in the spray deposition chamber, and a spray nozzle is arranged on the spray deposition disc. The jet orifices are all aligned to the upper surface of the jet deposition disc, jet orifices of the nozzles in one set of jet assemblies and jet orifices of the nozzles in the other set of jet assemblies are aligned to the same point of the jet deposition disc, and the jet deposition disc is connected with a rotary lifting driving device so as to drive the jet deposition disc to rotate and ascend and descend synchronously. According to the utility model, through the characteristic of rapid solidification of the spray forming technology, the problem of uniform dispersion phase distribution of the oxide dispersion strengthened copper-based material is reasonably solved, and billets with fine crystal grains, no macrosegregation and lower impurity content are prepared.

This invention discloses a low-temperature stirred deposition apparatus, comprising a reaction chamber with a reaction cavity within it. The reaction chamber is provided with an inlet for single-atom or cluster particles to enter the reaction cavity. An air inlet and an air outlet communicating with the reaction cavity are provided on the reaction chamber. A deposition chamber for mixing single-atom or cluster particles with powder is provided within the reaction cavity. A cooling mechanism is provided between the deposition chamber and the reaction cavity to cool the deposition chamber. A stirring mechanism is also provided between the deposition chamber and the reaction chamber to ensure uniform mixing of single-atom or cluster particles with powder. This invention achieves stable, deep low-temperature cooling of the deposition chamber through the cooling mechanism, promoting the growth of single atoms / clusters to precisely control particle size, while simultaneously stabilizing particle motion and reducing adhesion loss on the deposition chamber wall. The stirring mechanism solves the problem of poor coating quality in traditional devices, making it highly practical.

The utility model relates to the technical field of solar cells, in particular to a copper electroplating heterojunction cell and physical vapor deposition equipment, and the copper electroplating heterojunction cell comprises a yellow diaphragm, a copper-nickel alloy layer and a grid line; the yellow diaphragm comprises a copper seed layer; the copper-nickel alloy layer is deposited on the surface of the copper seed layer; the grid line is deposited on the copper-nickel alloy layer; the physical vapor deposition equipment is used for preparing a copper-nickel alloy layer of the copper electroplating heterojunction cell; the physical vapor deposition equipment is provided with a deposition chamber, and a copper-nickel alloy target material is arranged in the deposition chamber. The physical vapor deposition equipment can be used for preparing a copper electroplating heterojunction battery, and when the copper electroplating heterojunction battery forms a grid line, the loss of redundant electroplating materials can be reduced, and the cost can be reduced.

The utility model belongs to the technical field of display device manufacturing, and discloses a chemical vapor deposition device, which comprises a cavity, a mounting rack, an upper electrode, a lower electrode and an insulating pad, the cavity is arranged on the ground through the mounting rack, a deposition cavity is arranged in the cavity, the upper electrode and the lower electrode are arranged in the deposition cavity at intervals along the vertical direction, the upper electrode is connected with a radio frequency power supply, and the lower electrode is connected with the insulating pad. The lower electrode is grounded and is used for supporting a to-be-plated workpiece; and the insulating pad is at least arranged on the peripheral cavity wall of the deposition cavity along the horizontal direction in a coating manner. The peripheral cavity wall of the deposition cavity is coated with the insulating pad, so that plasma can be prevented from being adhered to the peripheral cavity wall of the deposition cavity to form a thin film, the electric conductivity of the peripheral cavity wall of the deposition cavity is ensured, and the flow direction of the plasma in the deposition cavity tends to be balanced, so that the deposition rate of a coating film of a workpiece to be coated is more stable, and the coating quality of the workpiece to be coated is improved. And the compactness, uniformity and thickness precision of the coating film are effectively improved, and the coating film quality of the workpiece to be coated is guaranteed.