36 results about "Trisilylamine" patented technology

Embodiments of the invention generally provide a method for depositing silicon-containing films. In one embodiment, a method for depositing silicon-containing material film on a substrate includes flowing a nitrogen and carbon containing chemical into a deposition chamber, flowing a silicon-containing source chemical having silicon-nitrogen bonds into the processing chamber, and heating the substrate disposed in the chamber to a temperature less than about 550 degrees Celsius. In another embodiment, the silicon containing chemical is trisilylamine and the nitrogen and carbon containing chemical is (CH3)3—N.

Embodiments of the present invention generally provide methods for forming a silicon nitride layer on a substrate. In one embodiment, a method of forming a silicon nitride layer using remote plasma chemical vapor deposition (CVD) at a temperature that is less than 300 degrees Celsius is disclosed. The precursors for the remote plasma CVD process include tris(dimethylamino)silane (TRIS), dichlorosilane (DCS), trisilylamine (TSA), bis-t-butylaminosilane (BTBAS), hexachlorodisilane (HCDS) or hexamethylcyclotrisilazane (HMCTZ).

Described are methods of making silicon nitride (SiN) materials on substrates. Improved SiN films made by the methods are also included. One aspect relates to depositing chlorine (Cl)-free conformal SiN films. In some embodiments, the SiN films are Cl-free and carbon (C)-free. Another aspect relates to methods of tuning the stress and / or wet etch rate of conformal SiN films. Another aspect relates to low-temperature methods of depositing high quality conformal SiN films. In some embodiments, the methods involve using trisilylamine (TSA) as a silicon-containing precursor.

There is described an apparatus, a tubular laminar flow, plug flow reactor, for making silylamines and particularly trisilylamine (TSA) in high yields from ammonia gas and a monohalosilane gas. The apparatus can be a tubular flow reactor comprising a first portion of the reactor defining a gas entry zone, a second portion of the reactor defining a reaction zone and a third portion of the reactor defining a separation zone, the reaction zone providing a reactant contacting region. Trisilylamine can be recovered in the separation zone in a cold trap collection vessel.

(Problem) To provide a method for producing silicon nitride films by vapor deposition that, while employing trisilylamine as precursor, can produce silicon nitride films that exhibit excellent film properties and can do so at relatively low temperatures and relatively high growth rates. (Solution) Method for producing silicon nitride film, said method being characterized by feeding gaseous trisilylamine and gaseous nitrogen source comprising at least two amine-type compounds selected from amine-type compounds with formula (1) NR1R2R3 (R1, R2, and R3 are each independently selected from hydrogen and C1-6 hydrocarbyl) into a reaction chamber that holds at least one substrate and forming silicon nitride film on said at least one substrate by reacting the trisilylamine and said nitrogen source.

The present invention is directed to a condensed phase batch process for synthesis of trisilylamine (TSA). An improved synthesis method that incorporates a solvent to help promote a condensed-phase reaction between ammonia gas (or liquid) and liquified monochlorosilane (MCS) in good yields is described. This method facilitates the removal of the byproduct waste with little to no reactor down time, substantial reduction of down-stream solids contamination and high-purity product from first-pass distillation.

Provided is a preparation process of trisilylamine capable of preparing high-purity trisilylamine more easily at a lower cost. More specifically, provided is a preparation process of trisilylamine, comprising a step of thermally decomposing perhydropolysilazane under an oxygen-free or low oxygen atmosphere.

Silicon nitride film is formed on substrate by feeding trisilylamine and ammonia into a CVD reaction chamber that contains a substrate. The ammonia gas / trisilylamine gas flow rate ratio is set to a value of at least about 10 and / or the thermal CVD reaction is run at a temperature no greater than about 600° C. Silicon oxynitride is obtained by introducing an oxygen source gas into the CVD reaction chamber. This method avoids the production of ammonium chloride and / or the incorporation of carbonaceous contaminants which are detrimental to the quality of the deposited film.

The invention provides a synthetic method of trisilylamine. The preparation method comprises the following steps: using inert gas for purging a catalytic distillation tower with inert gas in advance,respectively, simultaneously and continuously adding chlorosilane and ammonia in the catalytic distillation tower from a rectifying section and a stripping section in a gaseous state for a reaction, wherein the mol ratio of chlorosilane to ammonia is 1:1.2-3, the space velocity of chlorosilane is 0.5-2 / h, the reaction pressure is 0.2-1 MPa, and the reaction temperature of the distillation tower is350-420 DEG C, continuously leading the reaction products in the tower bottom out, separating the material to obtain NH4Cl, and using a widely-known impurity-removal refining technology to obtain thehigh purity trisilylamine.

Compositions and methods using same for forming a silicon-containing film such as without limitation a silicon oxide, silicon nitride, silicon oxynitride, a carbon-doped silicon nitride, or a carbon-doped silicon oxide film on at least a surface of a substrate having a surface feature. In one aspect, the composition comprises at least one compound is selected from the group consisting of a siloxane, an trisilylamine-based compound, an organoaminodisilane compound, and a cyclic trisilazane compound.

A method is provided for forming a nitrided high-k film in an atomic layer deposition process (ALD) process. The method includes receiving a substrate in a process chamber, maintaining the substrate at a temperature sufficient for ALD of a nitrided high-k film, and depositing the nitrided high-k film on the substrate by exposing the substrate to a gas pulse sequence that includes, in any order: a) exposing the substrate to a gas pulse comprising a metal-containing precursor, b) exposing the substrate to a gas pulse comprising an oxygen-containing gas, and c) exposing the substrate to a gas pulse comprising trisilylamine gas, where the exposing the substrate to the trisilylamine gas yields the nitrided high-k film that includes nitrogen and that is substantially free of silicon, and repeating the gas pulse sequence. A trisilylamine gas exposure may also be used to nitride a deposited high-k film.

Provided are a novel trisilyl amine derivative, a method for preparing the same, and a silicon-containing thin film using the same, wherein the trisilyl amine derivative, which is a compound having thermal stability, high volatility, and high reactivity and being present in a liquid state at room temperature and under pressure where handling is possible, may form a high purity silicon-containing thin film having excellent physical and electrical properties by various deposition methods.

Provided is a novel trisilyl amine derivative, wherein the trisilyl amine derivative, which is a compound having thermal stability, high volatility, and high reactivity and being present in a liquid state at room temperature and under pressure where handling is possible, may form a high purity siliconcontaining thin film having excellent physical and electrical properties by various deposition methods.

Described herein are compositions and methods for forming silicon and oxygen containing films. In one aspect, the film is deposited from at least one precursor, wherein the at least one precursor selected from the group consisting of Formulae A and B:wherein R, R1, and R2-8 are as defined herein.