7 results about "Thermal cvd" patented technology

To provide a substrate processing apparatus with a processing chamber for heat treatment that allows processing of multiple substrates simultaneously with improved process gas flow and heat distribution.SOLUTION: In a processing system, processing chambers 101a and 101b are dual processing chambers and share chamber body 130 and chamber body bottom 134. The chamber body includes a first set of gas injection passages 182a and a second set of gas injection passages 182b. The chamber body also includes a first set of exhaust outlets 172a and a second set of exhaust outlets 172b. The processing chamber also has a shared gas panel 108 and / or a common exhaust conduit 171.SELECTED DRAWING: Figure 1

The application is suitable for the technical field of electrode preparation, and particularly relates to a preparation method of a Ti / Magneli substrate surface low-temperature electrodeposited BDD composite electrode. 3 The application constructs a high-sp2 content, high-bonding-strength BDD functional layer in a full water-based system through a low-temperature route of laser micro-texturing-electrophoretic pre-deposition-pulse electrodeposition densification, avoids the problems of high-temperature oxidation of thermal CVD and pollution of organic electrodeposition, realizes greater-than-or-equal-to-600-mm wide roll-to-roll continuous production, and is suitable for industrial wastewater treatment and electrochemical advanced oxidation and the like.

The application discloses a process method for directly growing patterned graphene on an integrated circuit chip, and comprises the following steps: attaching an ultrathin single-crystal copper foil to the integrated circuit chip by compression as a base material for catalytically growing graphene; performing patterned treatment on the copper foil through a photoetching and etching process; and placing the chip in a three-temperature-zone thermal CVD system to grow graphene, so that the graphene is only grown in the area covered by the copper foil, thereby achieving the purpose of directly growing patterned graphene on the integrated circuit chip. The method provides a new idea for the development of graphene-based integrated circuits, and is beneficial to accelerating the commercialization application process of graphene.

The object of the present invention is to provide a method for producing a silicon film having high uniformity of film thickness or high step coverage through reduction of the thermal history of a cyclic silane compound. The present invention relates to a method for producing a silicon film, including the steps of heating a substrate inserted into a reactor of a cold-wall type thermal CVD system, supplying the cyclic silane compound to the reactor, and forming the silicon film on the substrate.

The application discloses a silicon carbide deposition processing equipment by using a hot CVD method and particularly relates to the technical field of silicon carbide deposition processing, which comprises a deposition processing chamber, wherein an agglomeration deposition assembly is arranged on the inside of the deposition processing chamber; the agglomeration deposition assembly comprises a sliding table for support; the sliding table is arranged at the bottom of a support frame; and the sliding table is in sliding connection with the deposition processing chamber. The gas can be guided by a hose, an L-shaped pipe and a reinforcing pipe, so that the gas containing silicon carbide can be sprayed outward with the material as a center point; the gas is heated from the inside to the outside by the heater while being sprayed; the sliding plate can drive the flow baffle to agglomerate or diffuse towards the axial point of the material through the inclination angle of the inclined seat by the traction force when the sliding plate is upwardly displaced, so that the silicon carbide containing the gas is agglomerated on the outside of the material by the blocking of the flow baffle, and the deposition efficiency and effect are improved.

Methods and apparatuses for depositing dielectric films into features on semiconductor substrates are described herein. Methods involve depositing dielectric films by using controlled thermal chemical vapor deposition, with periodic passivation operations and densification to modulate film properties.

The invention relates to a process for the preparation of carbon-deposited alkali metal oxyanion and the use thereof as cathode material in lithium secondary batteries wherein the process comprises synthesis of partially reacted alkali metal oxyanion, a wet-based nanomilling step, a drying step and a subsequent carbon deposition step performed by a thermal CVD process. The invention also relates to carbon deposited alkali metal oxyanion with less than 80 ppm of sulfur impurities for the preparation of a cathode of lithium secondary batteries with exceptional high-temperature electrochemical properties.