17 results about "Thermal cvd" patented technology

Provided is a method for producing graphene, in which heat bias inside a reaction vessel can be suppressed.　Provided is a method for producing graphene using a thermal CVD device, wherein the thermal CVD device has a cylindrical reaction vessel inside of which a base material for graphene production is accommodated, a gas supply unit that is connected to the reaction vessel and supplies a hydrocarbon-containing raw material gas toward the base material, a gas discharge unit that discharges gas, a heater that covers the periphery of a region including a region in which the base material is accommodated and that heats the inside of the reaction vessel, and a shielding member that is disposed inside the reaction vessel and intercepts the movement of heat. The shielding member is disposed at least between the gas supply unit and the substrate and between the substrate and the gas discharge unit, and the relationship of formula (x1) holds, where W is the flow rate of the raw material gas introduced from the gas supply unit, S is the internal cross-sectional area of the reaction vessel, and x is the inside diameter of the reaction vessel.　Formula (x1): W / S ≤ 54.97 × exp{–0.128 × (x – 4.0)}

To provide a substrate processing apparatus with a processing chamber for heat treatment that allows processing of multiple substrates simultaneously with improved process gas flow and heat distribution.SOLUTION: In a processing system, processing chambers 101a and 101b are dual processing chambers and share chamber body 130 and chamber body bottom 134. The chamber body includes a first set of gas injection passages 182a and a second set of gas injection passages 182b. The chamber body also includes a first set of exhaust outlets 172a and a second set of exhaust outlets 172b. The processing chamber also has a shared gas panel 108 and / or a common exhaust conduit 171.SELECTED DRAWING: Figure 1

The application is suitable for the technical field of electrode preparation, and particularly relates to a preparation method of a Ti / Magneli substrate surface low-temperature electrodeposited BDD composite electrode. 3 The application constructs a high-sp2 content, high-bonding-strength BDD functional layer in a full water-based system through a low-temperature route of laser micro-texturing-electrophoretic pre-deposition-pulse electrodeposition densification, avoids the problems of high-temperature oxidation of thermal CVD and pollution of organic electrodeposition, realizes greater-than-or-equal-to-600-mm wide roll-to-roll continuous production, and is suitable for industrial wastewater treatment and electrochemical advanced oxidation and the like.

The application discloses a process method for directly growing patterned graphene on an integrated circuit chip, and comprises the following steps: attaching an ultrathin single-crystal copper foil to the integrated circuit chip by compression as a base material for catalytically growing graphene; performing patterned treatment on the copper foil through a photoetching and etching process; and placing the chip in a three-temperature-zone thermal CVD system to grow graphene, so that the graphene is only grown in the area covered by the copper foil, thereby achieving the purpose of directly growing patterned graphene on the integrated circuit chip. The method provides a new idea for the development of graphene-based integrated circuits, and is beneficial to accelerating the commercialization application process of graphene.

The object of the present invention is to provide a method for producing a silicon film having high uniformity of film thickness or high step coverage through reduction of the thermal history of a cyclic silane compound. The present invention relates to a method for producing a silicon film, including the steps of heating a substrate inserted into a reactor of a cold-wall type thermal CVD system, supplying the cyclic silane compound to the reactor, and forming the silicon film on the substrate.

The application discloses a silicon carbide deposition processing equipment by using a hot CVD method and particularly relates to the technical field of silicon carbide deposition processing, which comprises a deposition processing chamber, wherein an agglomeration deposition assembly is arranged on the inside of the deposition processing chamber; the agglomeration deposition assembly comprises a sliding table for support; the sliding table is arranged at the bottom of a support frame; and the sliding table is in sliding connection with the deposition processing chamber. The gas can be guided by a hose, an L-shaped pipe and a reinforcing pipe, so that the gas containing silicon carbide can be sprayed outward with the material as a center point; the gas is heated from the inside to the outside by the heater while being sprayed; the sliding plate can drive the flow baffle to agglomerate or diffuse towards the axial point of the material through the inclination angle of the inclined seat by the traction force when the sliding plate is upwardly displaced, so that the silicon carbide containing the gas is agglomerated on the outside of the material by the blocking of the flow baffle, and the deposition efficiency and effect are improved.

The present invention discloses a process method for in-situ large-area preparation of patterned graphene. First, a metal foil contact layer and a substrate contact layer are respectively prepared on the back of the metal foil and the surface of the substrate. A laminator is used to laminate the contact layers of the metal foil and the substrate under certain temperature and pressure conditions. The substrate of the laminated metal foil is placed in a multi-temperature zone independently controlled thermal CVD system for low-temperature growth of graphene. Patterned lithography is directly performed on the graphene grown in-situ on the single-crystal metal foil laminated on the substrate, and through dry etching and self-aligned wet etching processes in sequence, the fixation of the graphene film layer, the patterning of graphene, and the removal of the metal foil and the contact film layer are achieved in sequence. By removing the photoresist and PMMA on the graphene, patterned graphene is prepared in-situ on the substrate. This method is applicable to the low-temperature and transfer-free preparation of graphene-based materials on large-area substrates, which is conducive to promoting the wide commercial application of graphene.

The invention relates to a method for producing a thin layer of pure amorphous boron by thermal CVD deposition. For this, a carrier gas is used that is inert to the B2H6 dissociation reaction and the deposition temperature is less than or equal to 550°C. Figure for abstract: Fig. 2A

The invention discloses a microwave-assisted chemical vapor deposition composite coating process for a neodymium-iron-boron magnet, and belongs to the technical field of material engineering and surface treatment. A traditional electroplating and spraying process often needs to be carried out at the high temperature of 500 DEG C or above, the neodymium-iron-boron magnet grain boundary neodymium-rich phase oxidation is caused, and the coercive force and residual magnetism of the magnet are possibly and remarkably reduced, the invention provides an innovative process capable of depositing a compact coating at the low temperature, reaction gas is excited by microwaves to be subjected to plasma treatment, and the effect of depositing the compact coating is achieved. And the composite coating is deposited in the temperature range of 200-500 DEG C, so that the damage of high temperature to the microstructure of the magnet is avoided. In the process, a multi-layer heterogeneous interface combined gradient coating structure is adopted, continuous transition is formed between layers through chemical bonding, the bonding strength is greatly improved, the porosity of the coating is small, and the coating has excellent corrosion resistance and thermal stability. In addition, according to the process, the reaction efficiency is improved through efficient energy transfer of a microwave field, the deposition rate reaches 200 nm / min, and the energy consumption is remarkably lower than that of a traditional thermal CVD process.

Methods of depositing titanium silicide (TiSi) in the formation of semiconductor structures are described. The methods include thermal chemical vapor deposition (CVD) in which a semiconductor substrate in a semiconductor processing chamber is exposed to a titanium-containing precursor, a silicon-containing precursor, and hydrogen (H2) to deposit the titanium silicide (TiSi) layer directly on the semiconductor substrate. Methods of selectively depositing titanium silicide (TiSi) in the formation of semiconductor structures, e.g., an n-type transistor and a p-type transistor, are also described.

Methods of depositing titanium silicide (TiSi) in the formation of semiconductor structures are described. The methods include thermal chemical vapor deposition (CVD) in which a semiconductor substrate in a semiconductor processing chamber is exposed to a titanium-containing precursor, a silicon-containing precursor, and hydrogen (H2) to deposit the titanium silicide (TiSi) layer directly on the semiconductor substrate. Methods of selectively depositing titanium silicide (TiSi) in the formation of semiconductor structures, e.g., an n-type transistor and a p-type transistor, are also described.

Provided is a thermal CVD device for producing graphene capable of suppressing thermal non-uniformity inside a reaction vessel.　The thermal CVD device for producing graphene is provided with: a reaction vessel in which a substrate for producing graphene is accommodated; a gas supply unit that is connected to the reaction vessel and supplies a raw material gas containing a hydrocarbon toward the substrate; a gas discharge unit that is connected on the opposite side to the gas supply unit side and discharges gas from the inside of the reaction vessel; a heater that covers the periphery of a region including the region where the substrate is accommodated, and heats the inside of the reaction vessel; and a shielding member that is disposed inside the reaction vessel and shields movement of heat inside the reaction vessel. In the reaction vessel, a first shielding member, a second shielding member, a third shielding member, and a fourth shielding member are disposed in this order as the shielding member. The second shielding member and the third shielding member are disposed in a region covered with the heater of the reaction vessel, and the first shielding member and the fourth shielding member are disposed in a region not covered with the heater of the reaction vessel.

Methods and apparatuses for depositing dielectric films into features on semiconductor substrates are described herein. Methods involve depositing dielectric films by using controlled thermal chemical vapor deposition, with periodic passivation operations and densification to modulate film properties.

The invention relates to a process for the preparation of carbon-deposited alkali metal oxyanion and the use thereof as cathode material in lithium secondary batteries wherein the process comprises synthesis of partially reacted alkali metal oxyanion, a wet-based nanomilling step, a drying step and a subsequent carbon deposition step performed by a thermal CVD process. The invention also relates to carbon deposited alkali metal oxyanion with less than 80 ppm of sulfur impurities for the preparation of a cathode of lithium secondary batteries with exceptional high-temperature electrochemical properties.

[Problem] To produce hydrogen with high production efficiency together with a high-value-added carbon nanotube thin film. [Solution] A system that is for producing hydrogen via nebulizer thermal CVD decomposition and that comprises a vertical thermal CVD device and a nebulizer device which contains a mixed Fe-ethanol liquid. Into the vertical thermal CVD device, the inside of which is set at 800-1000°C, the mixed Fe-ethanol liquid is nebulized via the nebulizer device, and a natural gas which has methane as a main component is fed as a carrier gas. The methane in the natural gas is brought into contact with the nebulized Fe or a catalyst, so as to achieve decomposition into carbon nanotubes and gas components including hydrogen. After the gas components including hydrogen are filtered, the hydrogen is removed via a gas filter and stored in an externally provided tank, the remaining gas components are returned to the carrier gas to be reused, and the collected carbon nanotubes are subjected to purification treatment.

To provide a system for producing hydrogen at high production efficiency together with a carbon nanotube thin film having high added value.SOLUTION: A system for producing hydrogen by nebulizer thermal CVD decomposition that comprises a vertical thermal CVD device 1 and a nebulizer device 6 storing an Fe / ethanol mixture, is configured such that an Fe / ethanol mixture liquid is atomized by the nebulizer device and natural gas mainly composed of methane is fed as carrier gas into the vertical thermal CVD device set at an internal temperature of 800°C to 1000°C, methane in the natural gas is brought into contact with atomized Fe or a catalyst for decomposition into carbon nanotubes 9 and a gas component containing hydrogen, the gas component containing hydrogen is filtered, hydrogen is taken out through a gas filter 14 and stored in a tank 17 provided externally, the remaining gas component is returned to the carrier gas for circulating use, and the collected carbon nanotubes are purified.SELECTED DRAWING: Figure 1

Provided is a thermal CVD apparatus for graphene production capable of suppressing heat unevenness inside a reaction vessel.　The thermal CVD device for graphene production comprises: a reaction vessel in which a substrate for graphene production is housed; a gas supply section for supplying a raw material gas containing hydrocarbon; a gas discharge section for discharging gas from the inside of the reaction vessel; a heater for heating the inside of the reaction vessel; and a shielding member for blocking heat transfer inside the reaction vessel. At least a first shielding member, the substrate, and a fourth shielding member are arranged in this order inside the reaction vessel, each shielding member including either a single or two or more shielding plates, each shielding plate having one or more holes. When the aperture ratio of each shielding plate is defined with respect to the internal cross-sectional area of the reaction vessel, the product of the aperture ratios of the shielding plates of the shielding member located between the substrate and the gas supply section, and the product of the aperture ratios of the shielding plates located between the substrate and the gas discharge section, are each between 0.0009-0.0700%.