9 results about "Plasma nitridation" patented technology

The invention relates to the technical field of surface treatment, in particular to a laminated dimensional coating for prolonging the service life and improving the reliability of the inner surface of a cylinder sleeve and a preparation method thereof. The honing technology is adopted for machining the honing lines which are crossed in the transverse dimension and the longitudinal dimension on the surface of the cylinder sleeve, the micro roughness of a micro platform and the honing lines is reduced through sand blasting treatment, and the inner surface of the cylinder sleeve is subjected to nitriding treatment through the plasma nitriding technology; the Si layer, the Si-C transition layer and the Si / DLC-based solid lubricating film are injected into a tiny platform and honing lines of the cylinder sleeve through the plasma chemical vapor deposition technology. Through the steps, the multi-dimensional and multi-layer superposed dimensional coating is constructed in the tiny platform and the honing lines on the surface of the cylinder sleeve, the reliability of the cylinder sleeve can be improved in a multi-dimensional and multi-layer mode, and the service life of the cylinder sleeve can be prolonged in a multi-dimensional and multi-layer mode.

The application provides a semiconductor structure and a manufacturing method thereof. The manufacturing method comprises the following steps: providing a semiconductor substrate; forming a gate dielectric layer on the semiconductor substrate; performing decoupling plasma nitridation on the gate dielectric layer, wherein the gas used in the decoupling plasma nitridation comprises N x O y ; performing post-nitridation annealing on the gate dielectric layer; and forming a gate conductive layer on the gate dielectric layer. The gas used in the decoupling plasma nitridation of the gate dielectric layer of the application comprises N x O y , and N x O y plasma is used to replace conventional N2 plasma. The advantage is that the same nitrogen concentration can be achieved with a lower dose to improve the K value of the gate dielectric layer. Meanwhile, the oxygen in the N x O y plasma fills the oxygen vacancy defects in the gate dielectric layer, reduces the probability of defect generation, and thus improves the reliability of the device. In addition, the manufacturing method of the semiconductor structure of the application does not need to increase the raw materials and process steps, so as not to increase the production cost and process complexity.

The invention discloses a coaxial dielectric barrier discharge plasma device and a method for preparing metal nitride, and belongs to the field of nitride powder preparation. Comprising a high-voltage electrode of a hollow structure, a rotating medium pipe coaxially arranged outside the high-voltage electrode in a sleeving mode, a metal net grounding electrode wrapping the periphery of the medium pipe and a carbon brush assembly electrically connected with the grounding electrode. Reaction gas is introduced from one end of the hollow high-voltage electrode and is uniformly sprayed into the annular dielectric barrier discharge gap between the high-voltage electrode and the rotating dielectric tube through the electrode wall through holes. The main shaft motor drives the medium pipe to rotate around the shaft, so that the medium barrier discharge channel moves in the circumferential direction and the axial direction, and powder is promoted to be continuously turned over. According to the invention, the plasma nitridation conversion of the metal oxide or metal hydride to the corresponding metal nitride powder can be realized in the atmosphere of mainly nitrogen, and higher nitridation conversion rate and energy utilization efficiency can be obtained at lower reaction temperature and within shorter reaction time; and the method can be popularized to be used for plasma modification of other powder materials.

The application relates to a photovoltaic cell and a preparation method thereof, and a photovoltaic module. The preparation method of the photovoltaic cell comprises the following steps: providing a photovoltaic cell intermediate body, wherein the photovoltaic cell intermediate body comprises a silicon substrate and an aluminum oxide layer located on at least one surface of the silicon substrate; and performing plasma nitriding treatment on the aluminum oxide layer by using a process gas comprising silane and ammonia, so that the aluminum oxide layer is converted into an aluminum oxynitride layer, and a silicon nitride layer is formed on the surface of the aluminum oxynitride layer away from the silicon substrate. The preparation method of the photovoltaic cell can reduce damage to the film layer in the preparation process of the aluminum oxynitride layer, reduce the interface defect state density, improve the passivation effect, and further improve the conversion efficiency of the photovoltaic cell.

A method of forming a semiconductor structure includes the steps of: pre-cleaning a surface of a substrate; forming an interface layer on the pre-cleaned surface of the substrate; depositing a high-k dielectric layer on the interface layer; performing a plasma nitridation process to insert nitrogen atoms in the deposited high-k dielectric layer; and performing a post-nitridation anneal process to passivate chemical bonds in the plasma-nitrided high-k dielectric layer.

A method of forming a semiconductor structure includes the steps of: pre-cleaning a surface of a substrate; forming an interface layer on the pre-cleaned surface of the substrate; depositing a high k dielectric layer on the interface layer; performing a plasma nitriding process to insert nitrogen atoms in the deposited high-kappa dielectric layer; and performing a post-nitriding annealing process to passivate chemical bonds in the plasma nitrided high-kappa dielectric layer.

The application discloses a kind of semiconductor device, shallow trench isolation structure's cleaning method, belong to semiconductor technical field, the method includes: providing a semiconductor device, semiconductor device includes silicon substrate, silicon substrate is stacked with multilayer semiconductor structure, in multilayer semiconductor structure, surface layer is silicon dioxide material, and the outer surface of surface layer exists the residue needing cleaning;Surface layer outer surface is handled using plasma nitriding method, so that surface layer outer surface is nitrided to form silicon oxynitride layer;Silicon oxynitride layer is etched using sulfuric acid hydrogen peroxide mixed solution, after silicon oxynitride layer is etched and removed, stop etching, to clean the outer surface residue of surface layer.The method can realize cleaning silicon dioxide under the premise that silicon dioxide loss is controllable.

Method for manufacturing a semiconductor device, comprising the method: Forming a fin structure (20) by structuring a semiconductor layer (10); Forming an insulating layer (30) such that an upper section of the fin structure (20) protrudes from the insulating layer (30); Formation of a gate dielectric layer (120) by a deposition process; After the gate dielectric layer (120) has been formed, nitrogen is introduced into the gate dielectric layer (120); and Forming a gate electrode layer (40) over the gate dielectric layer (120), wherein the gate dielectric layer (120), as it is formed, is silicon oxide, where: the introduction of nitrogen involves a plasma nitriding process using an N2 gas and an NH3 gas and a flow ratio NH3 / (N2 + NH3) in a range of 0.1 to 0.3, wherein a part of the gate dielectric layer (120) formed on a side wall of the upper section of the fin structure (20) contains no nitrogen or contains nitrogen in an amount less than 3 atomic %.

A method for forming a semiconductor structure includes: performing a first deposition process to deposit a first high-dielectric-constant dielectric layer on the surface of a substrate; performing an interface formation process to form an interface layer on the surface of the substrate; performing a second deposition process to deposit a second high-dielectric-constant dielectric layer on the interface layer; performing a plasma nitriding process to insert nitrogen atoms into the first high-dielectric-constant dielectric layer and the second high-dielectric-constant dielectric layer; and performing an annealing process to passivate the chemical bonds in the first high-dielectric-constant dielectric layer and the second high-dielectric-constant dielectric layer.