22 results about "Plasma nitridation" patented technology

The invention relates to a semiconductor device and a manufacturing method thereof, and the method comprises the steps: providing a substrate, forming a semiconductor structure on the substrate, and enabling the semiconductor structure to comprise a gate dielectric layer and a sacrificial layer formed on the gate dielectric layer; performing decoupling plasma nitriding treatment on the semiconductor structure, wherein the nitrogen element content of the treated semiconductor structure is higher than that of the semiconductor structure before treatment; performing a large-mass ion implantation process on the processed semiconductor structure so as to push the nitrogen element in the sacrificial layer into the gate dielectric layer; and removing the sacrificial layer. According to the invention, the condition that the nitrogen element diffuses into the substrate is reduced or avoided, the negative influence on the element diffusion and channel mobility of the subsequent ion implantation process due to the diffusion of the nitrogen element into the substrate is avoided, and the thermal budget in the process is effectively controlled, so that the risk of crystallization in the gate dielectric layer is reduced or avoided, and the reliability of the device is improved. And the process stability is improved.

The invention relates to a photovoltaic cell, a preparation method thereof and a photovoltaic module. The preparation method of the photovoltaic cell comprises the following steps that a photovoltaic cell intermediate is provided, and the photovoltaic cell intermediate comprises a silicon substrate and an aluminum oxide layer located on at least one surface of the silicon substrate; and carrying out plasma nitriding treatment on the aluminum oxide layer by using a process gas comprising silane and ammonia gas so as to convert the aluminum oxide layer into an aluminum oxynitride layer, and forming a silicon nitride layer on the surface of the aluminum oxynitride layer far away from the silicon substrate. According to the preparation method of the photovoltaic cell, damage to the film layer in the preparation process of the aluminum oxynitride layer can be reduced, the interface defect state density is reduced, the passivation effect is improved, and then the conversion efficiency of the photovoltaic cell is improved.

The invention relates to the technical field of surface treatment, in particular to a laminated dimensional coating for prolonging the service life and improving the reliability of the inner surface of a cylinder sleeve and a preparation method thereof. The honing technology is adopted for machining the honing lines which are crossed in the transverse dimension and the longitudinal dimension on the surface of the cylinder sleeve, the micro roughness of a micro platform and the honing lines is reduced through sand blasting treatment, and the inner surface of the cylinder sleeve is subjected to nitriding treatment through the plasma nitriding technology; the Si layer, the Si-C transition layer and the Si / DLC-based solid lubricating film are injected into a tiny platform and honing lines of the cylinder sleeve through the plasma chemical vapor deposition technology. Through the steps, the multi-dimensional and multi-layer superposed dimensional coating is constructed in the tiny platform and the honing lines on the surface of the cylinder sleeve, the reliability of the cylinder sleeve can be improved in a multi-dimensional and multi-layer mode, and the service life of the cylinder sleeve can be prolonged in a multi-dimensional and multi-layer mode.

The application relates to a semiconductor device and a manufacturing method thereof, comprising the following steps: providing a substrate, wherein a semiconductor structure is formed on the substrate, and the semiconductor structure comprises a gate dielectric layer and a sacrifice layer formed on the gate dielectric layer; performing decoupling plasma nitridation treatment on the semiconductor structure, so that the nitrogen content of the semiconductor structure after the treatment is higher than that before the treatment; performing a heavy ion implantation process on the semiconductor structure after the treatment, so that the nitrogen element in the sacrifice layer is pushed into the gate dielectric layer; and removing the sacrifice layer. The application reduces or avoids the diffusion of nitrogen elements into the substrate, avoids the negative influence of the diffusion of nitrogen elements into the substrate on the element diffusion and channel mobility in the subsequent ion implantation process, effectively controls the thermal budget in the process, reduces or avoids the risk of crystallization in the gate dielectric layer, and improves the process stability.

In a method of manufacturing a semiconductor device, a fin structure is formed by patterning a semiconductor layer, an isolation insulating layer is formed such that an upper portion of the fin structure protrudes from the isolation insulating layer, a gate dielectric layer is formed by a deposition process, a nitridation operation is performed on the gate dielectric layer, and a gate electrode layer is formed over the gate dielectric layer. The gate dielectric layer as formed includes silicon oxide, and the nitridation operation comprises a plasma nitridation operation using a N2 gas and a NH3 gas.

The invention discloses a method for cleaning a semiconductor device and a shallow trench isolation structure, and belongs to the technical field of semiconductors, and the method comprises the steps: providing a semiconductor device which comprises a silicon substrate, a multilayer semiconductor structure is stacked on the silicon substrate, in the multilayer semiconductor structure, the surface layer is made of a silicon dioxide material, and the surface layer is made of a silicon oxide material; residues needing to be cleaned exist on the outer surface of the surface layer; processing the outer surface of the surface layer by adopting a plasma nitriding method, so that the outer surface of the surface layer is nitrided to form a silicon oxynitride layer; and etching the silicon oxynitride layer by adopting a sulfuric acid and hydrogen peroxide mixed solution, and stopping etching after the silicon oxynitride layer is removed by etching so as to clean residues on the outer surface of the surface layer. According to the method, silicon dioxide can be cleaned on the premise of controllable silicon dioxide loss.

A method of forming a semiconductor structure includes performing a first deposition process to deposit a first high k dielectric layer on a surface of a substrate; performing an interface forming process to form an interface layer on the surface of the substrate; performing a second deposition process to deposit a second high k dielectric layer on the interfacial layer; performing a plasma nitriding process to insert nitrogen atoms in the first high kappa dielectric layer and the second high kappa dielectric layer; and performing an annealing process to passivate chemical bonds in the first high-kappa dielectric layer and the second high-kappa dielectric layer.

The application provides a semiconductor structure and a manufacturing method thereof. The manufacturing method comprises the following steps: providing a semiconductor substrate; forming a gate dielectric layer on the semiconductor substrate; performing decoupling plasma nitridation on the gate dielectric layer, wherein the gas used in the decoupling plasma nitridation comprises N x O y ; performing post-nitridation annealing on the gate dielectric layer; and forming a gate conductive layer on the gate dielectric layer. The gas used in the decoupling plasma nitridation of the gate dielectric layer of the application comprises N x O y , and N x O y plasma is used to replace conventional N2 plasma. The advantage is that the same nitrogen concentration can be achieved with a lower dose to improve the K value of the gate dielectric layer. Meanwhile, the oxygen in the N x O y plasma fills the oxygen vacancy defects in the gate dielectric layer, reduces the probability of defect generation, and thus improves the reliability of the device. In addition, the manufacturing method of the semiconductor structure of the application does not need to increase the raw materials and process steps, so as not to increase the production cost and process complexity.

A method is disclosed for manufacturing a high dielectric constant metal gate of NMOS and PMOS, comprising: step 1, forming an interface layer; step 2, forming a high dielectric constant layer; step 3, performing decoupled plasma nitridation; step 4, performing plasma nitridation annealing with a temperature set below a preset first temperature to reduce the number of oxygen vacancies in the high dielectric constant layer; step 5, forming a P-type work function metal layer; step 6, removing the P-type work function metal layer from the region of the gate structure of the NMOS; step 7, forming an N-type work function metal layer, wherein metal atoms of the N-type work function metal layer of a first NMOS diffuses laterally from an interface to the P-type work function metal layer of adjacent first PMOS and are fixed at the oxygen vacancies by forming a dipole; and step 8, forming the metal gate.

The invention provides a preparation method of a flash memory device, and the method comprises the steps: generating a compact first silicon oxide layer through an ISSG technology, permeating nitrogen ions into the first silicon oxide layer through a diffusion plasma nitriding technology, and repairing crystal lattices of the first silicon oxide layer through a thermal annealing technology after nitriding. The dielectric constant of the nitrided first silicon oxide layer is larger than that of a first silicon oxide layer in a traditional ONO film layer, P-type ions (such as boron ions, phosphorus ions and the like) can be effectively inhibited from diffusing from the floating gate layer to the control gate layer, and the problem that the flash memory device fails to read storage information due to electric leakage of the ONO film layer is avoided; the reliability of reading operation of the flash memory device is improved, and the electrical performance of the device is improved.

The invention discloses a coaxial dielectric barrier discharge plasma device and a method for preparing metal nitride, and belongs to the field of nitride powder preparation. Comprising a high-voltage electrode of a hollow structure, a rotating medium pipe coaxially arranged outside the high-voltage electrode in a sleeving mode, a metal net grounding electrode wrapping the periphery of the medium pipe and a carbon brush assembly electrically connected with the grounding electrode. Reaction gas is introduced from one end of the hollow high-voltage electrode and is uniformly sprayed into the annular dielectric barrier discharge gap between the high-voltage electrode and the rotating dielectric tube through the electrode wall through holes. The main shaft motor drives the medium pipe to rotate around the shaft, so that the medium barrier discharge channel moves in the circumferential direction and the axial direction, and powder is promoted to be continuously turned over. According to the invention, the plasma nitridation conversion of the metal oxide or metal hydride to the corresponding metal nitride powder can be realized in the atmosphere of mainly nitrogen, and higher nitridation conversion rate and energy utilization efficiency can be obtained at lower reaction temperature and within shorter reaction time; and the method can be popularized to be used for plasma modification of other powder materials.

The application relates to a photovoltaic cell and a preparation method thereof, and a photovoltaic module. The preparation method of the photovoltaic cell comprises the following steps: providing a photovoltaic cell intermediate body, wherein the photovoltaic cell intermediate body comprises a silicon substrate and an aluminum oxide layer located on at least one surface of the silicon substrate; and performing plasma nitriding treatment on the aluminum oxide layer by using a process gas comprising silane and ammonia, so that the aluminum oxide layer is converted into an aluminum oxynitride layer, and a silicon nitride layer is formed on the surface of the aluminum oxynitride layer away from the silicon substrate. The preparation method of the photovoltaic cell can reduce damage to the film layer in the preparation process of the aluminum oxynitride layer, reduce the interface defect state density, improve the passivation effect, and further improve the conversion efficiency of the photovoltaic cell.

A method of forming a semiconductor structure includes the steps of: pre-cleaning a surface of a substrate; forming an interface layer on the pre-cleaned surface of the substrate; depositing a high-k dielectric layer on the interface layer; performing a plasma nitridation process to insert nitrogen atoms in the deposited high-k dielectric layer; and performing a post-nitridation anneal process to passivate chemical bonds in the plasma-nitrided high-k dielectric layer.

The present invention relates to the technical field of titanium alloy surface treatment, and specifically to a titanium alloy wear-resistant and ablation-resistant composite strengthening layer and a preparation method thereof. The surface of a titanium alloy substrate is ground and then ultrasonically cleaned; a mechanical shot peening method is used to perform surface plastic deformation pretreatment on the cleaned titanium alloy to form a diffusion channel; plasma nitriding is performed on the titanium alloy after surface plastic deformation to obtain a titanium alloy with a surface composite strengthening. Based on the poor wear resistance and ablation resistance of traditional titanium alloys, the present invention uses a spraying composite technology that combines mechanical shot peening and plasma nitriding to prepare a wear-resistant nanocrystalline structure compound layer, an ablation-resistant aluminum-rich layer and an anti-fatigue diffusion layer on the surface of the titanium alloy. The composite strengthening layer has good wear resistance and ablation resistance, can effectively improve the wear and ablation characteristics of the titanium alloy hot end components, and improve the service reliability and safety of the titanium alloy hot end components.

The invention provides a semiconductor structure for a BCD process and a manufacturing method thereof, and the manufacturing method comprises the steps: providing a substrate, forming a patterned mask layer on the surface of the substrate, and exposing an N-type doped region on the surface of the substrate through an opening of the patterned mask layer; executing P-type ion implantation, and forming a plurality of P-type heavily doped regions in the N-type doped region so as to form an MPS diode in the substrate; removing the patterned photoresist layer and the oxide layer on the surface of the substrate; executing a decoupling plasma nitriding process to form a nitriding layer on the surface of the substrate; and forming a metal silicide layer on the surface of the substrate, and taking the metal silicide as a fuse on the MPS diode. The performance and the yield of the electric fuse structure formed by the MPS diode and the metal silicide can be improved.

A method of forming a semiconductor structure includes the steps of: pre-cleaning a surface of a substrate; forming an interface layer on the pre-cleaned surface of the substrate; depositing a high k dielectric layer on the interface layer; performing a plasma nitriding process to insert nitrogen atoms in the deposited high-kappa dielectric layer; and performing a post-nitriding annealing process to passivate chemical bonds in the plasma nitrided high-kappa dielectric layer.

In a method of manufacturing a semiconductor device, a fin structure is formed by patterning a semiconductor layer, an isolation insulating layer is formed such that an upper portion of the fin structure protrudes from the isolation insulating layer, a gate dielectric layer is formed by a deposition process, a nitridation operation is performed on the gate dielectric layer, and a gate electrode layer is formed over the gate dielectric layer. The gate dielectric layer as formed includes silicon oxide, and the nitridation operation comprises a plasma nitridation operation using a N2 gas and a NH3 gas.

Provided herein are methods for increasing the corrosion resistance of stainless steel in molten salt environments. A bulk material with a nanolayered structure of alternating layers of CrxN and the stainless steel is formed within a surface region thereof via plasma nitridation. In the CrxN layers, x is 1, 2 or, as an average, any value in between. Also provided is the bulk material with increased corrosion resistance in a molten salt environment formed by the plasma nitridation.

The invention discloses a three-dimensional porous metal nickel / nickel nitride composite material and a preparation method and application thereof. Relates to the technical field of materials and electrocatalysis. The three-dimensional porous metal nickel / nickel nitride composite material comprises foamed nickel and a nickel and nickel nitride mixed phase loaded on the surface of the foamed nickel, and the generated nickel nitride is of a columnar structure. Nickel nitride with columnar morphology is prepared on a three-dimensional porous foamed nickel substrate by adopting a vacuum plasma nitriding technology, so that the specific surface area of the electrode is further increased, and more active sites are exposed; the nickel nitride directly grows an active layer on the foamed nickel substrate, higher binding force is achieved, meanwhile, after nitrogen atoms are embedded into nickel lattices, the electronic structure of nickel is regulated and controlled, the intrinsic catalytic activity of the material is improved, and meanwhile the prepared three-dimensional porous metal nickel / nickel nitride composite material has better corrosion resistance in an acid / alkaline solution; in addition, the preparation process provided by the invention is simple, low in process cost and suitable for large-scale industrial preparation.

The application discloses a kind of semiconductor device, shallow trench isolation structure's cleaning method, belong to semiconductor technical field, the method includes: providing a semiconductor device, semiconductor device includes silicon substrate, silicon substrate is stacked with multilayer semiconductor structure, in multilayer semiconductor structure, surface layer is silicon dioxide material, and the outer surface of surface layer exists the residue needing cleaning;Surface layer outer surface is handled using plasma nitriding method, so that surface layer outer surface is nitrided to form silicon oxynitride layer;Silicon oxynitride layer is etched using sulfuric acid hydrogen peroxide mixed solution, after silicon oxynitride layer is etched and removed, stop etching, to clean the outer surface residue of surface layer.The method can realize cleaning silicon dioxide under the premise that silicon dioxide loss is controllable.

Method for manufacturing a semiconductor device, comprising the method: Forming a fin structure (20) by structuring a semiconductor layer (10); Forming an insulating layer (30) such that an upper section of the fin structure (20) protrudes from the insulating layer (30); Formation of a gate dielectric layer (120) by a deposition process; After the gate dielectric layer (120) has been formed, nitrogen is introduced into the gate dielectric layer (120); and Forming a gate electrode layer (40) over the gate dielectric layer (120), wherein the gate dielectric layer (120), as it is formed, is silicon oxide, where: the introduction of nitrogen involves a plasma nitriding process using an N2 gas and an NH3 gas and a flow ratio NH3 / (N2 + NH3) in a range of 0.1 to 0.3, wherein a part of the gate dielectric layer (120) formed on a side wall of the upper section of the fin structure (20) contains no nitrogen or contains nitrogen in an amount less than 3 atomic %.

A method for forming a semiconductor structure includes: performing a first deposition process to deposit a first high-dielectric-constant dielectric layer on the surface of a substrate; performing an interface formation process to form an interface layer on the surface of the substrate; performing a second deposition process to deposit a second high-dielectric-constant dielectric layer on the interface layer; performing a plasma nitriding process to insert nitrogen atoms into the first high-dielectric-constant dielectric layer and the second high-dielectric-constant dielectric layer; and performing an annealing process to passivate the chemical bonds in the first high-dielectric-constant dielectric layer and the second high-dielectric-constant dielectric layer.