61 results about "Thermal nitridation" patented technology

A semiconductor structure includes thin gate dielectrics that have been selectively nitrogen enriched. The amount of nitrogen introduced is sufficient to reduce or prevent gate leakage and dopant penetration, without appreciably degrading device performance. A lower concentration of nitrogen is introduced into pFET gate dielectrics than into nFET gate dielectrics. Nitridation may be accomplished selectively by various techniques, including rapid thermal nitridation (RTN), furnace nitridation, remote plasma nitridation (RPN), decoupled plasma nitridation (DPN), well implantation and / or polysilicon implantation.

A method and structure for an improved shallow trench isolation (STI) structure for a semiconductor device. The STI structure incorporates an oxynitride top layer of the STI fill. Optionally, the STI structure incorporates an oxynitride margin of the STI fill adjacent the silicon trench walls. A region of the oxynitride margin near the upper edges of the silicon trench walls includes oxynitride corners that are relatively thicker and contain a higher concentration of nitrogen as compared to the other regions of the oxynitride margin. The oxynitride features limit the STI fill height loss and also reduce the formation of divots in the STI fill below the level of the silicon substrate cause by hydrofluoric acid etching and other fabrication processes. Limiting STI fill height loss and the formation of divots improves the functions of the STI structure. The method of forming the STI structure is particularly compatible with standard semiconductor device fabrication processes, including chemical mechanical polishing (CMP), because the method incorporates the use of a pure silicon dioxide STI fill and plasma and thermal nitridation processes to form the oxynitride top layer and oxynitride margin, including the oxynitride corners, of the STI fill.

A gas barrier film comprising a resin substrate provided thereon at least one layer of a ceramic film, wherein the density ratio Y (=ρf / ρb) satisfies 1≧Y≧0.95 and the ceramic film has a residual stress being a compression stress of 0.01 MPa or more and 100 Mpa or less, wherein ρf is the density of the ceramic film and ρb is the density of a comparative ceramic film being formed by thermal oxidation or thermal nitridation of a metal as a mother material of the ceramic film so as to being the same composition ratio of the ceramic film.

A nitrogen precursor that has been activated by exposure to a remotely excited species is used as a reactant to form nitrogen-containing layers. The remotely excited species can be, e.g., N2, Ar, and / or He, which has been excited in a microwave radical generator. Downstream of the microwave radical generator and upstream of the substrate, the flow of excited species is mixed with a flow of NH3. The excited species activates the NH3. The substrate is exposed to both the activated NH3 and the excited species. The substrate can also be exposed to a precursor of another species to form a compound layer in a chemical vapor deposition. In addition, already-deposited layers can be nitrided by exposure to the activated NH3 and to the excited species, which results in higher levels of nitrogen incorporation than plasma nitridation using excited N2 alone, or thermal nitridation using NH3 alone, with the same process temperatures and nitridation durations.

The present invention provides methods for forming semiconductor FET devices having reduced gate edge leakage current by using plasma or thermal nitridation and low-temperature plasma re-oxidation processes post gate etch.

The present invention is to possible to avoid an inconvenience at a coupling portion between a barrier metal film obtained by depositing a titanium nitride film on a titanium film and thus having a film stack structure and a metal film filled, via the barrier metal film, in a connecting hole opened in an insulating film. The manufacturing method of a semiconductor device includes the steps of: forming a contact hole and exposing a nickel silicide layer from the bottom of the contact hole; forming a thermal reaction Ti film by a thermal reaction using a TiCl4 gas, forming a plasma reaction Ti film by a plasma reaction using a TiCl4 gas, carrying out plasma treatment with an H2 gas to decrease the chlorine concentration of the plasma reaction Ti film and at the same time to reduce an oxide film on the surface of the nickel silicide layer; forming a nitrogen-rich TiN film over the surface of the plasma reaction Ti film and at the same time reducing the oxide film on the surface of the nickel silicide layer by thermal nitridation treatment with an NH3 gas and plasma treatment with an NH3 gas.

A method and structure for an improved shallow trench isolation (STI) structure for a semiconductor device. The STI structure incorporates an oxynitride top layer of the STI fill. Optionally, the STI structure incorporates an oxynitride margin of the STI fill adjacent the silicon trench walls. A region of the oxynitride margin near the upper edges of the silicon trench walls includes oxynitride corners that are relatively thicker and contain a higher concentration of nitrogen as compared to the other regions of the oxynitride margin. The oxynitride features limit the STI fill height loss and also reduce the formation of divots in the STI fill below the level of the silicon substrate cause by hydrofluoric acid etching and other fabrication processes. Limiting STI fill height loss and the formation of divots improves the functions of the STI structure. The method of forming the STI structure is particularly compatible with standard semiconductor device fabrication processes, including chemical mechanical polishing (CMP), because the method incorporates the use of a pure silicon dioxide STI fill and plasma and thermal nitridation processes to form the oxynitride top layer and oxynitride margin, including the oxynitride corners, of the STI fill.

Rapid thermal nitridation is carried out to form a nitride film (19) on a lower electrode (15) which is made of silicon, and a tantalum oxide dielectric film (23) is further formed thereon. Then, wet oxidization is carried out to oxidize the lower electrode through the dielectric film (23) and the nitride film (19), thus an oxide film (17) is formed between the lower electrode (15) and the nitride film (19). Further, silicon which is not bonded to nitrogen in the nitride film (19) is oxidized, thus an oxide film (21) whose effective thickness is equal to or greater than 2 nm. The oxidization also recrystallizes the dielectric film (23). Finally, an upper electrode (25) is formed, and the capacitor is completed.

The invention discloses a preparation method of functionalized fused quartz powder for preparing quartz ceramics and the functionalized fused quartz powder. According to the preparation method of the functionalized fused quartz powder for preparing the quartz ceramics, products obtained after thermal decomposition of sucrose are used as carbon sources, in the atmosphere of nitrogen, through carbothermal nitridation reduction reaction, a sintering additive is formed through in-situ synthesis on the surface of fused quartz powder, the obtained functionalized fused quartz powder is used for the preparation and shaping of fused ceramics, and compared with mechanical addition of the sintering additive, the obtained functionalized fused quartz powder can be distributed more evenly in a matrix; meanwhile, because a trace amount of oxygen in the fused powder can be consumed in the process of functionalized treatment, and a crystallization phenomenon is inhibited to a certain degree; the volume density of the obtained fused quartz ceramics prepared from the obtained functionalized fused quartz powder is 1.96 g / cm<3>, and the fracture resistance reaches 43.5 MPa. The preparation method is simple and stable to operate, low in energy consumption and economical and environmentally friendly, and the used raw materials are cheap and easy to get, and the preparation method is suitable for industrial production.

A gas barrier film comprising a resin substrate provided thereon at least one layer of a ceramic film, wherein the density ratio Y (=ρf / ρb) satisfies 1≧Y≧0.95 and the ceramic film has a residual stress being a compression stress of 0.01 MPa or more and 100 Mpa or less, wherein ρf is the density of the ceramic film and ρb is the density of a comparative ceramic film being formed by thermal oxidation or thermal nitridation of a metal as a mother material of the ceramic film so as to being the same composition ratio of the ceramic film.

A method and structure for an improved shallow trench isolation (STI) structure for a semiconductor device. The STI structure incorporates an oxynitride top layer of the STI fill. Optionally, the STI structure incorporates an oxynitride margin of the STI fill adjacent the silicon trench walls. A region of the oxynitride margin near the upper edges of the silicon trench walls includes oxynitride corners that are relatively thicker and contain a higher concentration of nitrogen as compared to the other regions of the oxynitride margin. The oxynitride features limit the STI fill height loss and also reduce the formation of divots in the STI fill below the level of the silicon substrate cause by hydrofluoric acid etching and other fabrication processes. Limiting STI fill height loss and the formation of divots improves the functions of the STI structure. The method of forming the STI structure is particularly compatible with standard semiconductor device fabrication processes, including chemical mechanical polishing (CMP), because the method incorporates the use of a pure silicon dioxide STI fill and plasma and thermal nitridation processes to form the oxynitride top layer and oxynitride margin, including the oxynitride corners, of the STI fill.

The invention discloses a preparation method of a carbon / molybdenum disulfide-nitrogen-rich molybdenum nitride composite electrochemical catalyst material. The method comprises the following steps: introducing a MoO3 nanowire in a polymerization process of a pyrrole monomer, and preparing MoO3 nanowire with the surface coated with polypyrrole; under a solvothermal reaction condition, promoting the inner core MoO3 nanowire to be dissolved, and reacting with thiourea to vertically grow a molybdenum disulfide nanosheet vertically on the surface of the hollow polypyrrole nanotube; and then carrying out thermal nitridation, wherein the hollow polypyrrole nanotube is converted into a hollow carbon nanotube, and the MoS2 nanosheet is converted into MoS2-Mo5N6, so that the Mott-Schottky heterojunction composite material growing on the surface of the hollow carbon nano tube in situ is obtained. According to the invention, the composite electrochemical catalyst material obtained by the invention can effectively promote the electronic interaction between interfaces, improve the kinetic rate of catalytic hydrogen evolution reaction and effectively improve the catalytic activity of a MoS2-based plane; and the preparation method is simple, convenient to operate and suitable for popularization and application.

The invention relates to a method for preparing Sialon / Si3N4-SiC complex phase high-temperature materials through transformation and phase inversion of kyanite mill tailings, and belongs to the technical field of preparation of refractory materials. The method is characterized in that kyanite mill tailings, carbonaceous materials and high-purity nitrogen are taken as main materials, and are subjected to processes such as batching, ball mill mixing, high-temperature carbothermal reduction-nitridation reaction and carbon removal, so that high-purity sheet or clubbed Sialon-Sic complex phase powder is obtained; the Sialon-Sic complex phase powder prepared through carbothermal reduction-nitridation reaction, silicon nitride powder and silicon carbide powder are taken as main materials, and are subjected to batching and ball mill mixing, and then are sintered in non-oxidizing atmosphere, so that the Sialon / Si3N4-SiC complex phase high-temperature materials are obtained. The Sialon / Si3N4-SiC complex phase high-temperature materials prepared through transformation and phase inversion of the kyanite mill tailings have high rupture strength and compressive strength, and the technology has high transformation rate, and can be applied to high temperature material industry, ceramic component industry and iron and steel industry. The raw materials related to the method are low in cost and energy consumption, the utilization ratio of the kyanite mill tailings is high, not only is a novel way for the utilization of the kyanite mill tailings developed, but also environment pollution is reduced, and the method has profound environmental significance and economic value.