342results about How to "Good size uniformity" patented technology

A pattern forming method comprising a step of applying a resist composition whose solubility in a negative tone developer decreases upon irradiation with an actinic ray or radiation and which contains a resin having an alicyclic hydrocarbon structure and a dispersity of 1.7 or less and being capable of increasing the polarity by the action of an acid, an exposure step, and a development step using a negative tone developer; a resist composition for use in the method; and a developer and a rinsing solution for use in the method, are provided, whereby a pattern with reduced line edge roughness and high dimensional uniformity can be formed.

A pattern is formed by coating a resist composition comprising a polymer comprising recurring units having an optionally acid labile group-substituted naphthol group, an acid generator, and an organic solvent onto a substrate, baking to form a resist film, exposing the resist film to high-energy radiation, baking, and developing the exposed film with an organic solvent developer to form a negative pattern wherein the unexposed region of film is dissolved and the exposed region of film is not dissolved. In the process of image formation via positive/negative reversal by organic solvent development, the resist film has a high dissolution contrast and controlled acid diffusion. By subjecting the resist film to exposure through a mask having a lattice-like pattern and organic solvent development, a fine hole pattern can be formed at a high precision of dimensional control.

[Problems]To provide a membrane material that realizes effective and efficient separation of a target substance of micron size, being easy to handle and that can be worked into various forms; a blood filtration membrane and a leukocyte removing filter unit that realizes a substantial reduction of filter material volume while retaining high capability of removing leukocytes, thereby reducing the loss of hemocyte suspension; and a cell culturing diaphragm suitable for co-culturing and a relevant method of cell culturing. [Means for Solving Problems]There is provided a composite porous membrane comprising a porous membrane comprised of an organic polymeric compound, and a supporting porous membrane adjacent to the porous membrane, characterized in that the organic polymeric compound constituting the porous membrane penetrates in at least part of a surface adjacent to porous membrane of the supporting porous membrane, the porous membrane having specified opening ratio, average pore diameter, standard deviation of pore diameter, ratio of through pore, average membrane thickness, standard deviation of membrane thickness and internal structure, and that the supporting porous membrane has communicating pores of 0.5D μm or greater average pore diameter. Further, there are provided a blood filtration membrane comprising the composite porous membrane; a leukocyte removing filter unit comprising the composite porous membrane as a second filter; and, utilizing the composite porous membrane, a cell culturing diaphragm and method of cell culturing.

The invention discloses a modified ABS antistatic material and a preparation method thereof. The antistatic material is formed by melting the mixture in an injection machine after mixing PEEA, maleic anhydride grafted ABS resin (or styrene maleic anhydride copolymer SMA), ABS resin, zlnc oxide whisker, coupler and other additives according to a given proportion. The antistatic ABS material has the advantages of low surface resistance, permanent static resistance, light color and good mechanics performance; and moreover, the antistatic ABS material has appropriate cost, no toxicity and pollution, simple formation processing technology, easy realization and promising application prospect.

The invention discloses a preparation method of a cadmium selenide or cadmium sulfide two-dimensional monocrystal nanosheet. The method comprises the steps that the CdSe or CdS two-dimensional monocrystal nanosheet is prepared through a van der Waals epitaxial growth technology, the method is characterized in that a mica sheet which is smooth in surface and free of chemical dangling bond is adopted to serve as a substrate, CdCl2 powder or Se powder or S powder serves as a source material, argon serves as carrier gas, CdCl2 stream is reacted with Se or S steam to form CdSe or CdS steam at high temperature, and the steam is deposited on the mica sheet for nucleation and epitaxially grows into the CdSe or CdS two-dimensional monocrystal nanosheet. The preparation method of the cadmium selenide or cadmium sulfide two-dimensional monocrystal nanosheet is easy to operate, low in cost and strong in controllability, the obtained CdSe or CdS has the advantages of being good in size uniformity, high in degree of crystallinity and the like, and important research value and wide application prospect in the fields of solar cells, field effect transistors, photoelectric detectors, photocatalyses and the like are achieved.

Manual spraying device including a push-button that can be actuated manually, the push-button including a spray nozzle, the spray nozzle having an inner chamber adapted to receive a non-gaseous fluid product under pressure and delimited towards the outside by a perforated front wall, a reservoir for the fluid product to be sprayed, and a dispensing device that can be mechanically actuated by the push-button and adapted to transfer the fluid product from the reservoir to the inner chamber of the nozzle, the front wall having a plurality of calibrated holes, each having a diameter of between 1 and 100 μm, the diameter of each hole not differing from a mean of the diameters of the various holes by more than 20%.

The invention discloses an assembly tooling for the double assembly and the main drive of a head side plate on a staircase and an assembly method. The tooling comprises a work platform, wherein a fixed reference beam, a beam capable of transversely moving, a main drive lengthways moving dolly are arranged on the work platform, and the two beams are in parallel with each other by moving the beam capable of transversely moving; and a positioning stand column and a positioning wall plate capable of lengthways moving the side plate of the staircase are respectively arranged on the two beams, gaps are remained between the corresponding positioning stand columns and positioning wall plates, and the corresponding positioning wall plates can respectively move along the beams, so that the distances between the corresponding positioning wall plates and the corresponding positioning stand columns are changed; a pair of tangential guide rail arranging seat transverse moving trolleys are distributed on the main drive lengthways moving dolly, and the tangential guide rail is transported to the installing position of the tangential guide rail on the side plate by the dolly; a left/right main drive height positioning device is further arranged on the main drive lengthways moving dolly, and the device is used for positioning the double assembly height position of the center and the side plate of the main drive axis; and a pair of driving axial centering devices is arranged on the main drive height positioning device.

A low temperature poly-silicon film transistor includes a gate, a gate dielectric layer, a pattern silicon layer, a pattern insulation layer, an ohm contact layer and a source/drain layer. The gate and its dielectric layer are matched on the base plate and the silicon and the insulation layers are matched on the dielectric layer above the gate orderly. The pattern silicon layer includes a poly-silicon channel zone and a non-crystalline silicon thermal carrier suppression zone. The ohm contact layer is matched on part of the insulation layer above the dielectric layer and the thermal carrier suppression zone and connected with the suppressing zone set between the ohm contact layer and the poly-silicon channel the source/drain layer is matched on the gate dielectric and the ohm contact layer to suppress the thermal carrier effect.

The invention relates to a halide intercalated porous graphene material. The halide intercalated porous graphene material contains porous graphene sheets and a halide; the halide is intercalated between the porous graphene sheets; the particles of the halide are evenly spread between the porous graphene sheets at one single layer. The preparation method of the halide intercalated porous graphene material comprises the steps of taking a halide intercalated graphite compound as the raw materials and performing ultrasonic stripping on the raw material in a solvent to prepare the halide intercalated porous graphene material. The method is simple; the raw material is cheap and the equipment is easy to obtain; the production cost of the graphene is greatly reduced; in short, the method can be widely applied to the field of preparation of lithium-ion reversible battery electrode materials, energy source materials, conductive materials, heat-conducting materials and the like.

The invention discloses a preparation method of a tungsten disulfide nanorod. The method comprises the following steps that sodium tungstate, hydroxylamine hydrochloride and thiourea are dissolved in water according to the molar ratio of 1 to (1.5-3) to (3-5) to form a solution, a mixed surfactant is added to the solution, the mixed surfactant is composed of CTAB, CTAC and F127 which are mixed according to the molar ratio of 1 to (1.5-3) to (0.6-1.8), the solution is moved into a stainless steel reaction kettle, and a reaction is conducted for 10-24 h at the temperature ranging from 170 DEG C to 200 DEG C. For the prepared tungsten disulfide nanorod, the diameter ranges from 20 nm to 100 nm, the length ranges from 200 nm to 350 nm, the maximum length difference is smaller than 150 nm, the length distribution is centralized, the size uniformity is good, and the dispersity is good; meanwhile, the prepared tungsten disulfide nanorod has the unexpected visible light absorption property and the wide application prospect in the photocatalytic aspect.

The invention discloses a preparation method of a rhodium platinum alloy nanometer flower, and belongs to the field of nanometer materials. The method comprises the following steps: precursors of rhodium and platinum are dissolved to add in finishing agent solution, are stirred at 160-220 DEG C for reaction by 1-3 h, and are centrifugated to obtain the rhodium platinum alloy nanometer flower; and the prepared rhodium platinum alloy nanometer flower consists of multiple dense pistils, and is uniform in size distribution, excellent in dispersibility and controllabl in alloy component. The method is simpler in operation, high in repeatability, insensitive in reaction conditions and easier to realize, can prepare on a large scale, and is wider in application prospect on such aspects as catalysis, tail gas treatment, medicines and sensing.

A method of forming a resist pattern, including: step (1) in which a resist composition containing a base component (A) that exhibits increased solubility in an alkali developing solution and a compound represented by general formula (C1) is applied to a substrate to form a resist film, step (2) in which the resist film is subjected to exposure, step (3) in which baking is conducted after step (2), and step (4) in which the resist film is subjected to an alkali development, thereby forming a negative-tone resist pattern; and the resist composition used in step (1):

wherein R¹ represents a group which forms an aromatic ring together with the two carbon atoms bonded to the R¹ group; R² represents a hydrogen atom or a hydrocarbon group; and R³ represents a hydrogen atom, a carboxy group or a hydrocarbon group of 1 to 15 carbon atoms.

The present invention relates to a method and device for preparing powder by depositing nano metal, alloy, ceramic particles that are excellent in size uniformity, on a surface of the powder that is a base, using a vacuum deposition method. In particular, the present invention provides a method and device for preparing the powder on which the nano metal, alloy, and ceramic particles of a very uniform size are deposited, by simultaneously performing deposition and agitation using an effective agitation means for solving a disadvantage of a conventional method where deposition and agitation are separately performed. Also, the present invention provides a method and device for preparing the powder on which nano particles are deposited, in which a nano characteristic is kept by preventing a coalescence phenomenon of nano particles even when a deposition time for increasing contents of the nano particles increases in their preparation.

The invention provides a method for preparing zinc oxide nanometer hollow spheres in caustic corrosion reaction. The method is mainly characterized in including using the solution of Zn(Ac)2 as the initial reactant first, adjusting the pH value to 11.5-14 by adding ammonia, using ethanol as the solvent, finally forming the nanometer hollow spheres in the hydrothermal reaction between Zn(NH3)4<2+> and excessive ammonia at a high temperature. The entire reaction has simple material, easy operation, no need for any complex instrument processing, convenience and rapidness, which is a method of rapidly preparing the zinc oxide nanometer hollow spheres. The obtained hollow spheres have narrow size distribution and good dispersibility with an external diameter of 600 nm and an internal diameter of 200-300 nm. The caustic corrosion reaction is adopted to synthesize zinc oxide nanometer hollow spheres in the method, thus agglomeration phenomenon caused by an aging machine is obviated, complex operation steps of organic reaction synthesis, contamination and disturbance to objective material zinc oxide caused by the complex operation steps are obviated. The method is obviously characterized in high production rate, rapidness, easiness, convenient operation, low cost and environment friendliness.

The invention relates to the technical field of plastic particle production equipment, in particular to a plastic particle production system. The plastic particle production system comprises an extruding machine and a cutter; and the extruding machine comprises a shell, a screw and a mouth die, the mouth die is provided with extruding die holes, the screw is located in the shell, and the mouth dieis located outside the discharging end of the screw. The plastic particle production system is characterized in that the mouth die is vertically installed, and a quick cooling cavity is arranged under the mouth die and connected with a water supplying pipe; a limiting plate is fixed to the lower end of the quick cooling cavity and provided with constraint holes, and the constraint holes correspond to the extruding die holes and are in clearance fit with plastic strips; the cutter is located below the limiting plate; and an intermittent discharging mechanism is arranged between the dischargingend of the screw and the mouth die, the cutter conducts cutting during the non-discharging period, and a cooling pipe is arranged below the cutter and can further cool plastic particles. According tothe scheme, the plastic strips extruded out from the mouth die can be quickly cooled and formed, and the problem that in the prior art, the sizes of the plastic strips are not uniform due to gravitypulling is solved.

The invention relates to a magnetic iron-oxide nanoparticle covering method using silicon dioxide and belongs to the technical field of nano material preparation. The magnetic iron-oxide nanoparticle covering method using the silicon dioxide mainly comprises preparing water-soluble magnetic iron-oxide nanoparticles through a known method; adding appropriate surface modifier into water base dispersion liquid to form into stable water base dispersion liquid; adding simple substance metal silica powder into the water base dispersion liquid, heating and stirring, enabling the silica powder to hydrolyze under catalysis of alkaline substance to generate into silicon dioxide to be deposited on surfaces of the magnetic iron-oxide nanoparticles and obtaining the silicon dioxide covered magnetic iron-oxide nanoparticles. The magnetic iron-oxide nanoparticle covering method using the silicon dioxide has the advantages of being simple in preparation technology, green and environmental friendly, easily available in material and low win cost and achieving large-scale industrialized production due to the fact that organic solvent and surface active agent are not required in the preparation process and the covering reaction is performed in water solution; enabling obtained products to be strong in morphology controllability, high in purity degree and particularly suitable for biomedical application; being widely applied to silicon dioxide covering of other nanocrystallines such as quantum dots and precious metal nano particles.

The invention discloses a GaAs base multi-layer self-organizing quantum dot structure, and relates to the technical field of controllable growth of low-dimension semiconductor quantum dot materials and structures. The structure comprises a substrate, a buffer layer located on the substrate, N quantum dot layers located on the buffer layer and cap layers located on the N quantum dot layers, wherein a spacing layer is arranged between every two quantum dot layers. The structure is characterized in that at least one spacing layer between two adjacent quantum dot layers is double-layer, and a strain compensation layer is arranged between every two spacing layers. The invention further discloses a method for preparing the GaAs base multi-layer self-organizing quantum dot structure. According to the GaAs base multi-layer self-organizing quantum dot structure and the preparation method, strain accumulation among multiple layers of quantum dots is eliminated, accordingly mutual influence among the layers of the quantum dots is effectively reduced, the problem that quantum dots on an upper layer become large due to the strain accumulation is solved, uniformity of the multiple layers of the quantum dots can be improved, and at the same time, periodicity and mode gains of the multi-layer quantum dot structure are improved.

A method of fabricating a thin film transistor can include forming a metal catalyst layer on a substrate on which an amorphous silicon layer and a capping layer are formed. The metal catalyst may be formed using a sputtering target in which a composition ratio of the metal catalyst is controlled in the process of forming the sputtering target. The target may be composed of the metal catalyst and a metal with a larger atomic weight than the metal catalyst. The alloy may be formed with a predetermined composition ratio. The substrate may be annealed to crystallize the amorphous silicon layer to a polycrystalline silicon layer.

PURPOSE: Lyocell multi-filament is capable of producing tire cord having excellent physical properties. The tire cord has low elongation, increased strength, increased modulus, excellent drive stability, shape stability and uniformity. A manufacturing method thereof is characterized by increasing productivity. The lyocell multi-filament is useful for a tire for a passenger car. CONSTITUTION: Lyocell multi-filament is obtained by the steps of: (i) dissolving mixed powder of cellulose and PVA in a solvent mixed N-methyl morpholine N-oxide(NMMO) and water to prepare dope; (ii) spinning the dope through a spinning nozzle containing many orifices; passing fiber of the dope through air; coagulating the fiber into an upper part of a conic coagulating bath to manufacture multi-filament; (iii) change a course of the filament in a lower part of the coagulating bath; washing the filament in a washing bath; and then (iv) drying, oiling and winding the filament. The orifices has 100-300μm of diameter, 200-2400μm of length, 2-8times of the ratio of the diameter to the length, and 2.0-5.0mm of intervals between the orifices.

The invention belongs to the technical field of preparation of compound semiconductor nanomaterials and particularly relates to a preparation method of a monodisperse PbS quantum dot. The method comprises steps as follows: S1, a halide of lead and oleylamine are mixed, heated to 80-190 DEG C and fully stirred to form a lead precursor, and then the lead precursor is cooled to 20-35 DEG C; S2, thioacetamide and oleylamine are fully stirred at 20-35 DEG C to form a sulfur precursor; S3, the lead precursor and the sulfur precursor are mixed in the molar ratio of Pb and S being (2-5):1, heated to 60-90 DEG C and subjected to heat preservation for a certain period; S4, the solution after heat preservation in S3 is cooled to 20-35 DEG C, and oleic acid is added to remove the residual lead precursor; S5, the PbS quantum dot is obtained after separation and purification. The prepared PbS quantum dot has the characteristics of high crystallinity, size uniformity, oleic acid and halogen mixed passivation, efficient luminescence, high stability and the like.