2809results about How to "Increase opening ratio" patented technology

An object is to provide a semiconductor device of which a manufacturing process is not complicated and by which cost can be suppressed, by forming a thin film transistor using an oxide semiconductor film typified by zinc oxide, and a manufacturing method thereof. For the semiconductor device, a gate electrode is formed over a substrate; a gate insulating film is formed covering the gate electrode; an oxide semiconductor film is formed over the gate insulating film; and a first conductive film and a second conductive film are formed over the oxide semiconductor film. The oxide semiconductor film has at least a crystallized region in a channel region.

An organic light emitting diode (OLED) display includes at least one shield electrode between a cathode layer and an OLED drive circuit. The OLED drive circuit has at least one thin-film transistor (TFT), and the shield electrode is disposed to correspond to the thin-film transistor and closer to the cathode layer, covering an entire region between the source and drain of the thin-film transistor. The shield electrode is either grounded or tied to the gate of the thin-film transistor, to thereby minimize parasitic capacitances in the pixels of the display to enhance the display performance. The presented architecture enables high density drive circuit integration in amorphous silicon or other technologies, yet preserving a high display aperture ratio.

In a pixel circuit 10, TFTs 12 and 13 are turned on while a TFT 14 is turned off, and a voltage (VDD+Vx) which depends on a threshold voltage Vth of a driving TFT 11 is read onto a data line Sj. Moreover, switches 21 and 22 in a source driver circuit are turned on, and a voltage Vx is held at a capacitor 26. Next, the TFT 13 is turned off, states of switches 21 to 24 are switched, and a voltage (Vdata+Vx) is applied to the data line Sj. Further, the TFT 12 is turned off while the TFT 14 is turned on. An amount of an electric current flowing through an organic EL element 15 after the turn-on of the TFT 14 is determined from the voltage (Vdata+Vx) of a gate terminal of the driving TFT 11. Thus, it is possible to efficiently utilize an amplitude of a data voltage and compensate variations in threshold voltage of the driving TFT 11 with high accuracy, without increasing a scale of the pixel circuit 10.

The present invention provides a semiconductor device which can prevent a current from flowing into a display element at a signal writing operation, without increasing power consumption and without changing a potential of a power supply for supplying a current to a load in each row. When a predetermined current is supplied to a transistor to set a gate-source voltage of the transistor, a potential of a gate terminal of the transistor is adjusted so as to prevent a current from flowing into a load which is connected to a source terminal of the transistor. Thus, a potential of a wire connected to the gate terminal of the transistor is made different from that of a wire connected to a drain terminal of the transistor. At that time, an operation of a transistor is shifted so as to allow a large amount of current to flow, and influences by intersection capacitance parasitic to a wire or the like or wire resistance are hardly caused, and a set operation is conducted quickly.

It is an object to manufacture and provide a highly reliable display device including a thin film transistor with a high aperture ratio which has stable electric characteristics. In a manufacturing method of a semiconductor device having a thin film transistor in which a semiconductor layer including a channel formation region is formed using an oxide semiconductor film, a heat treatment for reducing moisture and the like which are impurities and for improving the purity of the oxide semiconductor film (a heat treatment for dehydration or dehydrogenation) is performed. Further, an aperture ratio is improved by forming a gate electrode layer, a source electrode layer, and a drain electrode layer using conductive films having light transmitting properties.

The invention discloses a touch control display circuit structure and a driving method, an array substrate and a display device thereof, and relates to the field of displayer manufacture. The touch control display circuit structure can reduce manufacturing processes during touch display product producing process, improves aperture opening ratio, and improves product additional value. The touch control display circuit structure comprises a touch control unit, a display unit, a data line, a first scanning line, a second scanning line, a signal collection line, a first signal control line, another one data line, another one first scanning line, another one second scanning line and another one signal control line, wherein the data line, the first scanning line, the second scanning line, the signal collection line and the first signal control line are connected with the touch control unit, and the another one data line, the another one first scanning line, the another one second scanning line and the another one signal control line are connected with the display unit. The touch control display circuit structure is applied to displayer manufacture.

A touch-sensitive display device includes a color filter substrate, an array substrate, a liquid crystal layer, and a touch-sensing structure. The touch-sensing structure is disposed on the color filter substrate and includes at least one first sensing series and at least one second sensing series overlapped with and spaced apart from the first sensing series. During a touch-sensing operation, the first sensing series receives a common voltage scanning signal, and the second sensing series receives a sensing signal to sense coupling capacitance formed as a result of a touch action when the common voltage scanning signal drives the first sensing series.

A CMOS type semiconductor image sensor module wherein a pixel aperture ratio is improved, chip use efficiency is improved and furthermore, simultaneous shutter operation by all the pixels is made possible, and a method for manufacturing such semiconductor image sensor module are provided. The semiconductor image sensor module is provided by stacking a first semiconductor chip, which has an image sensor wherein a plurality of pixels composed of a photoelectric conversion element and a transistor are arranged, and a second semiconductor chip, which has an A/D converter array. Preferably, the semiconductor image sensor module is provided by stacking a third semiconductor chip having a memory element array. Furthermore, the semiconductor image sensor module is provided by stacking the first semiconductor chip having the image sensor and a fourth semiconductor chip having an analog nonvolatile memory array.

As a result of miniaturization of a pixel region associated with an improvement in definition and an increase in a substrate size associated with an increase in area, defects due to precision, bending, and the like of a mask used at the time of evaporation have become issues. A partition including portions with different thicknesses over a pixel electrode (also referred to as a first electrode) in a display region and in the vicinity of a pixel electrode layer is formed, without increasing the number of steps, by using a photomask or a reticle provided with an auxiliary pattern having a light intensity reduction function made of a diffraction grating pattern or a semi-transmissive film.

The invention discloses a capacitance-type embedded touch screen, a driving method thereof and a display device. A touch sensing electrode extending along the line direction of pixel units is arranged on a color film substrate; on a TFT (Thin Film Transistor) array substrate, a double grid structure is adopted, i.e., two grid signal lines are arranged between the adjacent pixel units, and every two adjacent rows of pixel units form a group of pixel unit rows and share a data signal line between the two rows of pixel units, thus saving the position of part of data signal lines. Therefore, touch driving electrodes for realizing a touch function can be arranged on the saved positions of the grid signal lines, i.e., the touch driving electrodes are arranged at clearances between adjacent pixel units, so that not only can the precision of required by touch be ensured, but also less aperture area of the pixel units is occupied, and the relatively large aperture ratio of the touch screen can be ensured.

It is an object to obtain a liquid crystal display device in which a contact defect is reduced, increase in contact resistance is suppressed, and an opening ratio is high. The present invention relates to a liquid crystal display device having a substrate; a thin film transistor provided over the substrate, which includes a gate wiring, a gate insulating film, an island-shaped semiconductor film, a source region, and a drain region; a source wiring which is provided over the substrate and is connected to the source region; a drain electrode which is provided over the substrate and is connected to the drain region; an auxiliary capacitor provided over the substrate; a pixel electrode connected to the drain electrode; and a protective film formed so as to cover the thin film transistor and the source wiring, where the protective film has an opening, and the auxiliary capacitor is formed in the area where the opening is formed.

The invention discloses a pixel drive circuit of an OLED (Organic Light Emitting Diode) display and a drive method thereof. The pixel circuit comprises a drive transistor, two switching transistors, a coupling capacitor, a storage capacitor and an OLED, wherein the drain electrode of the first switching transistor is connected with a data line, the grid electrode is connected with a first scanning control line, and the source electrode is connected with the end B of the coupling capacitor; the drain electrode of the second switching transistor is connected with the storage capacitor and the end A of the coupling capacitor, the grid electrode is connected with a second scanning control line, and the source electrode is connected with the drain electrode of the drive transistor and is connected with a power line through the OLED; and the grid electrode of the drive transistor is connected with the storage capacitor and the end A of the coupling capacitor, and the source electrode is grounded. The circuit can be used for effectively compensating the heterogeneity of threshold voltage of a thin film transistor and the degeneration of the cut-in voltage of the OLED to improve the picture brightness homogeneity of the OLED display screen.