Solid imaging element and manufacturing method thereof

Abstract

A CMOS type semiconductor image sensor module wherein a pixel aperture ratio is improved, chip use efficiency is improved and furthermore, simultaneous shutter operation by all the pixels is made possible, and a method for manufacturing such semiconductor image sensor module are provided. The semiconductor image sensor module is provided by stacking a first semiconductor chip, which has an image sensor wherein a plurality of pixels composed of a photoelectric conversion element and a transistor are arranged, and a second semiconductor chip, which has an A / D converter array. Preferably, the semiconductor image sensor module is provided by stacking a third semiconductor chip having a memory element array. Furthermore, the semiconductor image sensor module is provided by stacking the first semiconductor chip having the image sensor and a fourth semiconductor chip having an analog nonvolatile memory array.

Description

technical field

[0001] The present invention relates to a semiconductor image sensor module and a method of manufacturing the same. More specifically, it relates to a semiconductor image sensor module that simultaneously shields light in response to increased shutter speeds such as digital still-picture cameras, video cameras, and cell phones with cameras. Background technique

[0002] Compared with CCD image sensors, CMOS image sensors have the advantage of being easy to implement a system-on-chip because they can be fabricated with a single power supply, low power consumption, and can be fabricated using standard CMOS processing. In recent years, CMOS image sensors have been used in advanced single-lens reflex digital still-picture cameras and mobile phones by taking advantage of this advantage.

[0003] 54 and 55 show simplified structures of a CCD image sensor and a CMOS image sensor, respectively.

[0004] As shown in FIG. 54 , in the CCD image sensor 1, a plurality o...

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