Solid imaging element and manufacturing method thereof

Abstract

A CMOS type semiconductor image sensor module wherein a pixel aperture ratio is improved, chip use efficiency is improved and furthermore, simultaneous shutter operation by all the pixels is made possible, and a method for manufacturing such semiconductor image sensor module are provided. The semiconductor image sensor module is provided by stacking a first semiconductor chip, which has an image sensor wherein a plurality of pixels composed of a photoelectric conversion element and a transistor are arranged, and a second semiconductor chip, which has an A / D converter array. Preferably, the semiconductor image sensor module is provided by stacking a third semiconductor chip having a memory element array. Furthermore, the semiconductor image sensor module is provided by stacking the first semiconductor chip having the image sensor and a fourth semiconductor chip having an analog nonvolatile memory array.

Description

technical field [0001] The present invention relates to a semiconductor image sensor module and a method of manufacturing the same. More specifically, it relates to a semiconductor image sensor module that simultaneously shields light in response to increased shutter speeds such as digital still-picture cameras, video cameras, and cell phones with cameras. Background technique [0002] Compared with CCD image sensors, CMOS image sensors have the advantage of being easy to implement a system-on-chip because they can be fabricated with a single power supply, low power consumption, and can be fabricated using standard CMOS processing. In recent years, CMOS image sensors have been used in advanced single-lens reflex digital still-picture cameras and mobile phones by taking advantage of this advantage. [0003] 54 and 55 show simplified structures of a CCD image sensor and a CMOS image sensor, respectively. [0004] As shown in FIG. 54 , in the CCD image sensor 1, a plurality o...

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Problems solved by technology

[0014] However, since the CMOS image sensor of the structure shown in FIG. 52 has a photodiode PD-sensor circuit area 32 and an ADC-storage area 33 in one semiconductor chip, when the number of pixels is increased and the resolution is set to be high, the unit pixel is a fine pixel. The opening area becomes smaller, and good sensitivity cannot be obtained

And the efficiency of the chip is not good, the area increases and the cost is inevitably high

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