The invention relates to the technical field of
semiconductor devices, in particular to a low-working-current-density
green light Micro-LED epitaxial structure and a preparation method thereof. The epitaxial structure comprises a substrate, a buffer layer, an N-type
semiconductor layer, a low-
temperature stress release layer, a multi-
quantum well light-emitting layer and a P-type
semiconductor layer. The
electron blocking layer is not arranged on the multi-
quantum-well light-emitting layer, the multi-
quantum-well light-emitting layer comprises four sub-
layers including a
first light blue light multi-quantum-well layer, a second
blue light multi-quantum-well layer, a third
green light multi-quantum-well layer and a fourth light
blue light multi-quantum-well layer, and the In component content in the third
green light multi-quantum-well layer is larger than that in other
layers. The third cyan light multi-
quantum well layer is a main light-emitting unit and is not provided with an
electron blocking layer, so that the blocking effect on hole injection can be eliminated, the hole injection efficiency of the P-type semiconductor layer is remarkably improved, and the matching degree of
electron hole concentration in a multi-
quantum well light-emitting layer region is improved.