140results about How to "Possible to obtain" patented technology

A process is provided for monitoring a patient being anesthetized, as well as a process for determining a combined effect of different anesthetics used. Devices for carrying out the processes are also provided.

An image pickup apparatus capable of forming a corrected image which does not give a feeling of wrongness to a user. In the apparatus, an image pickup element photoelectrically converts an optical image to output the same as image data. A target correction value is calculated for correcting image quality degradation due to a lens unit, based on lens characteristic information and a status of the lens unit. A system controller sets a rate of change to stepwise make the current correction value closer to the target correction value, and repeatedly calculates the correction value according to the target correction value and the rate of change. The image data is corrected based on the repeatedly calculated correction value. The rate of change is changed depending on the relationship between a preceding value of the correction value calculated in the past and the target correction value.

A semiconductor optical device such as a laser or semiconductor optical amplifier (SOA) based on an indium phosphide substrate or equivalent buffer layer. The active layer of the device is based on conventional InGaAs(P) alloy, but additionally includes N in order to increase the operating wavelength to greater than 1.5 μm, preferably to a wavelength lying in the C- or L-band. The active layer composition may thus be denoted In1-xGaxAsyNzPp with x≧0.48, y≦1−z−p, z≦0.05, p≧0. The active layer may include a quantum well or multi-quantum wells in which case its thickness is preferably less than the critical thickness for lattice relaxation. In other embodiments the active layer is a “massive” layer with quasi-bulk properties. The active layer may advantageously be under tensile stress, preferably roughly between 1% and 2.2%, to manipulate the light and heavy hole bands. The active layer is typically bounded by barrier layers made of a suitable semiconductor alloy, such as AlInAs or InGaAs(P).

The present invention concerns a method for generating nanostructures in order to obtain in an area on the surface of a metal piece (10) a nanostructured layer of defined thickness, characterized in that it comprises: a step for projecting onto an impact point in the area of the surface of the piece (10) to be treated, for a given duration, at a given speed and at variable incidences at the same impact point, a given quantity of perfectly spherical balls (22) of given dimensions, reused continuously during the projection; repetition of the preceding step with a shift of the impact point so that the impact points as a group cover the entire surface of the piece to be treated; a step for treatment by diffusion of chemical compounds into the nanostructured layer generated during the step for implementing the method for generating nanostructures.