74 results about "Avalanche multiplication" patented technology

A light detection apparatus according to an embodiment of the present disclosure includes a semiconductor substrate, a light receiver, a trench, a multiplier that is a first electrically-conductive type, and a contactor. The semiconductor substrate has a first surface and a second surface facing each other, and has a pixel array in which a plurality of pixels is disposed into an array shape in an in-plane direction. The light receiver is provided inside the semiconductor substrate for each of the pixels, and generates, through photoelectric conversion, carriers in accordance with an amount of light received. The trench is provided, for each of the pixels, to the first surface of the semiconductor substrate. The multiplier that is the first electrically-conductive type is provided to a bottom surface of the trench, and allows the carriers generated in the light receiver to undergo avalanche multiplication. The contactor includes an electrically-conductive material buried in the trench, and is in contact with the multiplier.

The photoelectric conversion device includes a semiconductor layer provided with an avalanche photodiode, and an interconnection structure layer provided on a side of a first surface of the semiconductor layer. The interconnection structure layer includes an interconnection structure made of a metal material and overlapping with the avalanche multiplication region of the avalanche photodiode in a plan view. The interconnection structure includes a first interconnection, a second interconnection disposed farther from the first surface than the first interconnection, and a contact electrode electrically connecting the first interconnection and the second interconnection. An opening is provided in the first interconnection in a portion overlapping with the avalanche multiplication region in the plan view. The second interconnection is disposed so as to overlap an entire of the opening in the plan view. The contact electrode is arranged around the opening in the plan view.

A photodetector (100) comprises: a semiconductor substrate having a first main surface and a second main surface opposite to the first main surface; an epitaxial layer formed on the semiconductor substrate; a multiplication region in the epitaxial layer that is substantially parallel to the first main surface and avalanche multiplies charges generated by photoelectric conversion on the semiconductor substrate; and a separation region that separates at least two of the multiplication regions.

The invention discloses a GaN-based bidirectional dual-waveband avalanche photodetector based on a back-to-back p-i-n structure, which comprises two back-to-back dual photodiode structures which share a p-type layer and grow on a substrate, namely a p-i-n structure taking GaN as an intrinsic layer and an SACM structure taking Al < 0.45 > Ga < 0.55 > N as an intrinsic layer. Compared with a traditional ultraviolet avalanche photodiode, the bidirectional dual-band avalanche photodiode can achieve avalanche multiplication under the forward bias voltage and the reverse bias voltage, and different working modes can be achieved by adjusting the external bias voltage. In a forward bias mode, the device is cut off at 365 nm, and in a reverse bias mode, the cut-off wavelength of the device is 281 nm, so that dual-band ultraviolet signal detection is realized, and the dual-band detection method is beneficial to accurate identification of signals and further popularization and application.

The present disclosure relates to an electronic device and an imaging element configured so as to be able to avoid further degradation in performance. The imaging element is provided with, for each of a plurality of pixels, a single-photon avalanche diode (SPAD) that generates avalanche multiplication as a result of the supply of a reverse bias voltage, the imaging element further comprising: a storage unit into which address information indicating an address of a defective pixel has been written; a digital processing circuit that outputs a pixel selection signal, for selecting the defective pixel, in accordance with the address information read from the storage unit; and a retention unit that is provided for each pixel and retains defect information indicating whether the pixel is a defective pixel. For each pixel, the retention unit provided in a pixel selected by the pixel selection signal output from the digital processing circuit retains defect information indicating that the pixel is defective, and outputs a control signal for blocking supply of the reverse bias voltage to the SPAD. The present technology can be applied to, for example, an imaging element in which a SPAD is used.

The present invention provides a distance image acquisition device and a distance image acquisition method that can extend the measurement distance and ensure distance accuracy. The distance image acquisition device (1) includes a distance measurement sensor (10) that detects the measurement light by transferring the charge generated in the charge generation region (36) corresponding to the incidence of measurement light emitted from a light source (2) and reflected by an object (OJ) to the charge accumulation region (24, 25) using a transfer gate electrode (42, 43). The charge generation region (36) includes an avalanche multiplication region that generates avalanche multiplication. The control unit (4) divides the entire distance range (70) of the measurement object into a plurality of intervals (71A to 71E), controls the distance measuring sensor (10) in such a manner that the time difference (TD) between the emission timing of the measurement light of the light source (2) and the transmission timing of the charge of the transmission gate electrodes (42, 43) is different between the plurality of intervals (71A to 71E), and performs measurement on the plurality of intervals, and generates a distance image of the entire distance range (70) based on the measurement results for the plurality of intervals (71A to 71E).

The application relates to the technical field of photoelectric detection, and provides an avalanche multiplication photoelectric detector and a preparation method, the detector comprising a super surface structure, a second doped layer, a first doped layer, a multiplication layer, a charge layer, an absorption layer and a dielectric super surface layer which are arranged in sequence, the super surface structure is arranged on the dielectric super surface layer or arranged on the side surface of the dielectric super surface layer and the absorption layer close to the dielectric super surface layer, and the super surface structure penetrates along the thickness direction of the dielectric super surface layer; the second doped layer is formed in the absorption layer and located on the side of the absorption layer close to the super surface structure. The avalanche multiplication photoelectric detector provided by the application realizes the regulation and control of the phase, amplitude and polarization of the incident light field by integrating the super surface structure on the incident side of the absorption layer, so that the absorption rate of the detector is improved without increasing the thickness of the absorption layer, and the gain of the detector is improved, the device bandwidth is effectively expanded, the time jitter is reduced, and the noise is suppressed.

A light detection device according to an embodiment of the present disclosure comprises: a semiconductor substrate having opposing first and second surfaces; a light-receiving section provided inside the semiconductor substrate to generate, by photoelectric conversion, carriers in accordance with an amount of light received; a multiplying section for avalanche multiplication of the carriers generated in the light-receiving section, the multiplying section being provided inside the semiconductor substrate and farther to the first-surface side than the light-receiving section, and being formed by the stacking of a first conductivity-type region and a second conductivity-type region of a different conductivity type than the first conductivity-type region; a first semiconductor layer provided at least partially on the second-surface side of the semiconductor substrate and having the same conductivity type as the first conductivity-type region; and a light-transmissive first electrode that is stacked on the first semiconductor layer and electrically connected to the first semiconductor layer.

The invention discloses an avalanche photodetector structure with an adjustable receiving rate and an avalanche photodetector thereof, the avalanche photodetector structure comprises an APD, the APD is composed of a positive electrode layer, an absorption layer, a gain layer, a substrate layer and a negative electrode layer, the gain layer comprises a charge control region and an avalanche multiplication region, and the negative electrode layer only comprises a negative electrode; the amplifier further comprises a plurality of multiplication control regions, at least one added avalanche multiplication region and a negative electrode added corresponding to the avalanche multiplication region, the multiplication control regions and the added avalanche multiplication region are located in the gain layer, the avalanche multiplication regions are arranged independently, the negative electrodes are arranged independently, and the multiplication control regions, the avalanche multiplication regions and the negative electrodes are arranged in a one-to-one correspondence mode; the multiplication control region and the charge control region act independently or jointly to realize regulation and control of two or more avalanche multiplication regions. The APD has the advantages that the APD gain can be adjusted in a large range, two-gear adjustment of low bandwidth and high gain and high bandwidth and low gain is achieved, and the APD can be used for receiving optical signals with different rates.

An image capturing apparatus comprises a photoelectric conversion element having a plurality of pixels, wherein each pixel comprises a sensor unit comprising an avalanche photodiode configured to generate pulses in response to photons incident thereon, a counter configured to count the number of the pulses, a memory configured to store count values of the counter, and a switch configured to switch the avalanche photodiode between a standby state in which avalanche multiplication is possible and a recharge state, a signal generation unit configured to supply a clock signal to the switch, a light emitting unit configured to perform pulse light emission for illuminating a subject in synchronization with the clock signal, and a control unit configured to perform a plurality of exposure operations by the counter according to timing of the pulse light emission and a predetermined image-capturing distance range for capturing images of a subject existing in the predetermined image-capturing distance range, and configured to shift relative timing of the clock signal and the pulse light emission by a predetermined phase for each predetermined exposure operation.

A light receiving device according to an embodiment includes: a light receiving element (1000) in which a current flows because of avalanche multiplication caused in accordance with a photon that has been incident on the light receiving element in a state in which the light receiving element is charged to a predetermined potential based on a bias voltage, the light receiving element returning to said state by a recharge current; a detection unit (1002) configured to detect the current, and invert an output signal in a case in which a current value of the current exceeds a threshold; a current source (1001) configured to supply the recharge current to the light receiving element; and a switch unit (1010) configured to control supply of the bias voltage to the light receiving element in accordance with the output signal of the detection unit.

The invention relates to the technical field of electron emission, and discloses a large-current pulse micro-channel plate electron emission source and an X-ray generation device. According to the electron emission source, an electron emission function layer at the head end of an MCP assembly is excited by adopting a rapidly regulated and controlled UV LED light source, and ultrafast time sequence modulation of electron beams is realized through an avalanche multiplication process of the electron beams in the MCP. By adopting a specific high-lead, low-alkali or alkali-free glass component or ceramic substrate composite functional film layer structure, the MCP assembly has long service life stability of low resistance, high current output and high power density operation. Independent bias voltage and gating voltage synchronous with electronic pulse are applied to the MCP assembly through the driving control unit, accurate thermal management is carried out in combination with a pulse-charging circulation mode, and the problems of charge compensation and thermal limitation under large current output are effectively solved. The electron emission source breaks through the bottleneck, supports peak current density exceeding 100 mA / cm under submicrosecond pulse, and realizes hundred microampere level steady-state current output under millisecond level long pulse.

The present application relates to a kind of diamond-based gallium oxide heterojunction avalanche photodetector and its preparation method, adopt p + Diamond substrate, sequentially epitaxial p ‑ Diamond multiplication layer, n ‑ Ga2O3 charge layer, i-Ga2O3 absorption layer and n + Ga2O3 contact layer, form separate absorption multiplication II-type heterojunction mesa structure;Through ICP etching exposure substrate, and utilize BOE wet etching and nitrogen annealing repair side wall damage;Finally, ohmic contact electrode is formed at top and bottom respectively.Under reverse bias, heterojunction built-in electric field and mesa edge local electric field cooperate, realize carrier avalanche multiplication, can realize single-photon level detection to ≤280nm solar blind waveband.Diamond substrate high thermal conductivity significantly inhibits Ga2O3 thermal accumulation, improves device stability and life.Process is fully compatible with MPCVD / MOCVD and standard semiconductor process, applicable to deep ultraviolet weak light imaging and other fields.

This radiation detector comprises: a phosphor that converts radiation into visible light; an avalanche photodiode that detects the visible light; a reset switch that makes it possible to carry out a reset operation in which a potential is applied to the avalanche photodiode; and a control means that controlling the reset switch such that the reset operation is carried out according to detection of avalanche multiplication in the avalanche photodiode.

A photoelectric conversion device includes: a photoelectric conversion unit that generates a photon detection signal by using avalanche multiplication; a counter circuit that counts the photon detection signal output from the photoelectric conversion unit; a first period included in one frame; and a second period that is included in the one frame, that follows the first period, and that does not overlap with the first period. A count value based on one photon detection signal by the counter circuit in the first period is greater than a count value based on the one photon detection signal by the counter circuit in the second period.

An avalanche photodiode (100) is provided with: a semiconductor substrate (1) having a first surface; and an avalanche multiplication layer (3), an electric field control layer (4), a first transition layer (5), a second transition layer (6), and a light absorption layer (7), which are sequentially laminated on the first surface from the semiconductor substrate side. The second transition layer and the electric field control layer each contain a dopant of the first conductivity type. The first transition layer does not contain a dopant, or contains a dopant of a first conductivity type or a second conductivity type different from the first conductivity type. The carrier concentration of the first transition layer is lower than the carrier concentration of the second transition layer.

An opto-electric conversion device, an opto-electric conversion system, and a movable body are provided. The opto-electric conversion device includes a plurality of avalanche photodiodes. Each of the plurality of avalanche photodiodes includes an avalanche multiplication unit formed by a first semiconductor region of a first conductivity type disposed at a first depth, and a second semiconductor region of a second conductivity type different from the first conductivity type disposed at a second depth deeper than the first depth. A fourth semiconductor region different in at least one of a conductivity type and an impurity concentration from a third semiconductor region of the second conductivity type is disposed at a position shallower than the third semiconductor region, and a depth of a boundary portion between the third semiconductor region and the fourth semiconductor region is deeper than the avalanche multiplication unit.

A light detection device according to one embodiment of the present invention comprises: a first substrate having a first surface and a second surface facing each other, and having a pixel array section in which a plurality of pixels are arranged in an array in an in-plane direction; a second substrate laminated on the first surface side of the first substrate and having a semiconductor layer provided with at least one transistor; a light-receiving element that is provided inside the first substrate for each of the pixels, and that has a light-receiving unit that generates a carrier corresponding to the amount of received light by photoelectric conversion, and a multiplication unit that avalanche multiplies the carrier generated by the light-receiving unit; a first contact layer provided on the first surface of the first substrate and electrically connected to the light receiving unit; and a shielding layer provided on a path connecting the first contact layer and the at least one transistor, and to which a predetermined potential is applied.

This invention relates to the field of optical communication technology and proposes an optoelectronic fusion transmitter and method based on all-silicon technology. The transmitter includes an optical transmitter, an all-silicon photodetector, and a control circuit. The all-silicon photodetector performs real-time in-situ acquisition of multi-wavelength random polarization modulation signals and optical signals from internal nodes of the optical transmitter. The optical signals are converted into monitoring electrical signals and sent to the control circuit. The all-silicon photodetector is a serpentine waveguide avalanche photodetector. An avalanche multiplication region with a reverse bias voltage is configured at the starting end of the serpentine waveguide. As the optical signals from internal nodes of the optical transmitter propagate along the serpentine waveguide, they are absorbed segment by segment, generating primary photogenerated carriers. These carriers are amplified by the avalanche multiplication effect in the high-field region to form the monitoring electrical signal. By employing an all-silicon photodetector, polarization management, multi-wavelength channel allocation, electro-optic modulation, and closed-loop power control are integrated onto a unified all-silicon technology platform, improving the integration level.

This invention discloses an avalanche photodetector structure with adjustable receiving rate and the avalanche photodetector thereof, including an APD. The APD is composed of a positive electrode layer, an absorption layer, a gain layer, a substrate layer, and a negative electrode layer. The gain layer includes a charge control region and an avalanche multiplication region, and the negative electrode layer includes only one negative electrode. It also includes multiple multiplication control regions, at least one additional avalanche multiplication region, and a corresponding additional negative electrode. The multiplication control regions and the additional avalanche multiplication region are all located within the gain layer. The avalanche multiplication regions and the negative electrodes are independently configured, and the multiplication control regions, avalanche multiplication regions, and negative electrodes are configured in a one-to-one correspondence. The multiplication control regions and the charge control regions can act individually or jointly to achieve modulation of two or more avalanche multiplication regions. Advantages: The gain of the APD of this invention can be adjusted over a wide range, achieving two levels of adjustment: low bandwidth high gain and high bandwidth low gain, which can be used to receive optical signals at different rates.

A light detection device according to an embodiment of the present disclosure includes: a first substrate having a pixel array unit; a light-receiving element provided inside the first substrate for each pixel, the light-receiving element having a light-receiving unit that generates a carrier corresponding to an amount of received light, and a multiplier that performs avalanche multiplication on the carrier generated in the light-receiving unit; a first contact layer disposed on the first surface of the first substrate, the first contact layer being electrically connected to the light receiving unit; a second contact layer disposed on the first surface of the first substrate, the second contact layer electrically connected to the multiplier; a second substrate stacked on the first surface side of the first substrate, the second substrate having a semiconductor layer provided with a transistor; a first through wiring passing through the semiconductor layer in the stacking direction, the first through wiring being electrically connected to the first contact layer; a second through wiring penetrating the semiconductor in the stacking direction, the second through wiring being electrically connected to the second contact layer; and a first shield electrode provided in a portion between the adjacent transistor and the first and second through wirings, to which a fixed potential is applied.

The light sensor (1) of the present application is provided with: a charge generation region (29) that generates charges in accordance with incident light; a charge collection region (33) that transfers the charges generated in the charge generation region (29); and at least one transfer gate electrode (41) that is arranged on a transfer region (35) between the charge generation region (29) and the charge collection region (33). The charge generation region (29) includes: an avalanche multiplication region (23) that generates avalanche multiplication; and a sloped potential formation region (59) that forms a sloped potential that is sloped in such a manner that the potential becomes lower as the transfer region (35) is approached, in the charge generation region (29).

To provide a photoelectric conversion device that suitably detects the number of periods in which avalanche multiplication has occurred from among a plurality of periods in the standby state for the avalanche multiplication.SOLUTION: A photoelectric conversion device includes a photodiode that performs avalanche multiplication, a generation circuit that generates a control signal, a first control circuit that controls a standby state in which the avalanche multiplication of the photodiode is possible by the control signal and a recharge state in which the photodiode is returned to a state in which the avalanche multiplication is possible again, and a second control circuit that detects whether the avalanche multiplication has occurred in the standby state using the control signal and a signal corresponding to the output of the photodiode, and counts the number of periods in which the avalanche multiplication has occurred from among a plurality of periods in the standby state.SELECTED DRAWING: Figure 2

To provide a photoelectric conversion device capable of solving a problem caused in a standby state where a charging means and a power source are separated.SOLUTION: An avalanche photodiode including a first terminal and a second terminal; a charge unit configured to control electrical connection between the first terminal and a first power supply; a second power supply electrically connected to the second terminal; An amplitude conversion unit configured to reduce an amplitude of a voltage output from the first terminal by avalanche multiplication of the avalanche photodiode, and a voltage holding unit connected between the first terminal and the amplitude conversion unit and configured to hold the voltage of the first terminal so that the voltage of the first terminal does not exceed a predetermined value.SELECTED DRAWING: Figure 6

The disclosed semiconductor device includes a region provided with a plurality of circuit blocks each including an avalanche photodiode. A part of the plurality of circuit blocks is a pixel circuit further including a first control circuit configured to control the avalanche photodiode to a standby state in which an avalanche multiplication is possible and a recharging state in which the avalanche photodiode is returned to a state in which the avalanche multiplication is possible after the avalanche multiplication occurs, in response to the first control signal, and another part of the plurality of circuit blocks is a signal generation circuit configured to generate a signal corresponding to a waveform of the first control signal. The signal generation circuit is configured not to output a signal corresponding to the output of the avalanche photodiode.

The devices and methods herein relate to a Mie Avalanche Photodiode (Mie-APD). A Mie-APD leverages Mie resonant scattering and avalanche multiplication to generate current. The Mie-APD features a material layer, an absorption region, and a multiplication region. The multiplication region is configured for multiplying free carriers generated when the absorption region absorbs an electromagnetic perturbation. The material layer serves as a substrate for the absorption region and includes the multiplication region. The structure of the Mie-APD allows for the enhancement of spatial resolution, dynamic range, noise characteristics, and data acquisition speed in applications such as hazard detection, 3D sensing, low light imaging, astronomy, and medical imaging, among others. Variations to the structure, design, and fabrication of the Mie-APD can provide further improved performance and functionality such as enhanced response to specific wavelengths and / or polarizations.WO

The ranging image sensor includes a semiconductor layer and an electrode layer. The semiconductor layer and the electrode layer form a plurality of pixels. Each of the plurality of pixels has an avalanche multiplication region, a charge distribution region, a first charge transfer region, and a second charge transfer region in the semiconductor layer. Each of the plurality of pixels has a photogate electrode, a first transfer gate electrode, and a second transfer gate electrode in the electrode layer. The avalanche multiplication region is continuous across the plurality of pixels or reaches a trench formed in the semiconductor layer to separate the plurality of pixels from each other.

This invention belongs to the field of optoelectronics technology, specifically relating to a narrowband near-infrared thermionic photodetector, its fabrication method, and its applications. A top-layer metal grating absorbs near-infrared light, generating thermionic electrons that are injected into an ultrathin silicon film, where they are collected by the bottom electrode to form a photocurrent. The top-layer metal grating forms a Schottky contact with the silicon thin film, enabling near-infrared light detection below the silicon energy bandgap. The small thickness of the metal grating increases photoemission within the metal, providing more opportunities for thermionic emission over the Schottky barrier, further improving the photodetector efficiency. Simultaneously, by adjusting the width of the metal grating, the resonant wavelength of the detector can be changed, achieving a wavelength-tunable near-infrared photodetector. Due to the thinness of silicon, applying a small bias voltage can induce a strong electric field in the silicon film, triggering an avalanche multiplication effect. This invention broadens the operating wavelength range of traditional silicon-based photodetectors and achieves tunable peak responsivity, showing great promise for applications in silicon-based optoelectronic devices.

The present disclosure relates to a light detection element and a distance sensor with which it is possible to further improve pixel characteristics. This light detection element is configured by laminating a light-receiving substrate provided with an avalanche multiplication region for multiplying electrons generated by one incident photon, and a multilayer wiring layer in which a plurality of wiring including output wiring for outputting the electrons generated in the avalanche multiplication region are provided in multiple layers within an insulation film. The multilayer wiring layer is provided with: a resistor for improving high-light-intensity resistance, the resistor being connected to the output wiring; and one or more charge-injection-blocking films that are disposed closer to the light-receiving substrate than the resistor and block injection of charges into the light-receiving substrate. The present technology can be applied, for example, to a distance sensor in which a SPAD element is used.

The invention discloses an optimization method for a grid mesh structure of a micro-grid gas detector. The optimization method comprises the following steps: 1, establishing a finite element model of the micro-grid gas detector; 2, converting the obtained target candidate structure set into a Garfield + + readable format, and importing the converted target candidate structure set into a Garfield + + readable format; 3, generating a specified number of spatially distributed initial ionization electrons in the drift region, and tracking the drift trajectory of the initial ionization electrons from the generation position to the grid mesh; 4, performing avalanche multiplication on the penetrating electrons to generate secondary electrons, tracking movement tracks of the secondary electrons and ions, and calculating electron gain and an ion feedback coefficient; 5, outputting an original current signal and obtaining an output voltage pulse signal; and 6, analyzing a plurality of performance indexes obtained under different grid structure parameters, and determining a comprehensive score through an analytic hierarchy process to determine the optimal configuration of the grid structure parameters. According to the method, the grid mesh structure is optimized from the microcosmic electron behavior process for the first time, the trial and error cost can be remarkably reduced, and physical simulation and parameter optimization functions are deeply fused.