120 results about "Avalanche multiplication" patented technology

A light detection apparatus according to an embodiment of the present disclosure includes a semiconductor substrate, a light receiver, a trench, a multiplier that is a first electrically-conductive type, and a contactor. The semiconductor substrate has a first surface and a second surface facing each other, and has a pixel array in which a plurality of pixels is disposed into an array shape in an in-plane direction. The light receiver is provided inside the semiconductor substrate for each of the pixels, and generates, through photoelectric conversion, carriers in accordance with an amount of light received. The trench is provided, for each of the pixels, to the first surface of the semiconductor substrate. The multiplier that is the first electrically-conductive type is provided to a bottom surface of the trench, and allows the carriers generated in the light receiver to undergo avalanche multiplication. The contactor includes an electrically-conductive material buried in the trench, and is in contact with the multiplier.

The invention discloses a cascade avalanche multiplication photodiode, wherein a substrate oxide layer is provided on a substrate, and a p-type electrode layer I, a p-type light absorption layer, an electric field regulation layer I, an avalanche multiplication layer I, an n-type transition layer, an electron traveling layer with a low impurity concentration, an electric field regulation layer II, an avalanche multiplication layer II, and an n-type electrode layer are provided on the substrate oxide layer from left to right, wherein the p-type electrode layer II is embedded in the electron traveling layer region with a low impurity concentration, and each layer arranged in sequence on the substrate oxide layer is surrounded by an electric field isolation ring layer, and an intrinsic layer is provided in the outer region of the electric field isolation ring layer, and a p-electrode I is provided on the p-type electrode layer I, a p-electrode II is provided on the p-type electrode layer II, and an n-electrode is provided on the n-type electrode layer. The advantages of the patent are that the structure of the invention avoids the curvature effect, eliminates edge breakdown, improves stability, and realizes multi-stage cascade avalanche multiplication monolithic integration at the same time, obtains a very high stable gain, and effectively suppresses the noise caused by hole avalanches.

To reduce power consumption while ensuring a wide dynamic range.SOLUTION: A photoelectric conversion device includes: a photodiode that performs avalanche multiplication in response to incidence of photons; a pulse generation circuit that outputs a first control signal for controlling the photodiode to be in a standby state or a recharge state, and a second control signal for controlling a timing of photon detection; and a control circuit that controls the photodiode on the basis of the first control signal. The present technology can be applied to an imaging element.SELECTED DRAWING: Figure 3

A photoelectric conversion device includes an APD, a signal processing circuit including a first input node connected to one node of the APD and a second input node to which a periodic first control signal is input, and a recharge circuit connected to the one node of the APD and controlling a recharge operation of the APD in accordance with a periodic second control signal. The signal processing circuit switches, in accordance with the first control signal, between a first mode in which an output value is changed in accordance with a signal to the first input node and a second mode in which a fixed value is output regardless of a signal input to the first input node, and outputs once a first value in the first mode when avalanche multiplication occurs in the APD two or more times during one cycle of the second control signal.

An apparatus includes a photodiode that performs avalanche multiplication, a recharging circuit, a control signal generating circuit that generates a control signal to control the recharging circuit, a count pulse generating circuit that generates a pulse signal from a signal output from the photodiode, and a counter that counts the pulse signal output from the count pulse generating circuit. The control signal generating circuit is configured to output, based on a clock signal and a mask signal, the control signal having a first period and the control signal having a second period longer than the first period. In a case where a counted value of the counter reaches a threshold, the signal to be output from the control signal generating circuit can be switched from the control signal having the first period to the control signal having the second period.

A photoelectric conversion apparatus includes a plurality of avalanche photodiodes. Each of the plurality of avalanche photodiodes includes an avalanche multiplication unit formed by a first semiconductor region of a first conductivity type that is arranged at a first depth, and a second semiconductor region of a second conductivity type different from the first conductivity type and which is arranged at a second depth deeper than the first depth. A fourth semiconductor region at least one of a conductivity type and an impurity concentration of which is different from those of a third semiconductor region of the second conductivity type is arranged at a position shallower than the third semiconductor region, and a depth of a boundary portion between the third semiconductor region and the fourth semiconductor region is deeper than that of the avalanche multiplication unit.

According to an aspect of the present disclosure, an avalanche diode, a detection unit configured to detect an avalanche current generated by avalanche multiplication in the avalanche diode, a switch disposed between the avalanche diode and the detection unit, and a reset unit configured to reset a node between the switch and the detection unit. The reset unit resets the node during a period in which the switch is in an off state.

The photoelectric conversion device includes a pixel. The pixel includes a photoelectric conversion unit and a signal processing circuit. The photoelectric conversion unit includes an avalanche diode that multiplies charge generated by an incident of photon by avalanche multiplication, and outputting a first signal in accordance with the incident of photon. The signal processing circuit includes a logic circuit that outputs a third signal in response to the first signal and a second signal. The signal processing circuit includes a first element having a first withstand voltage and a second element having a second withstand voltage lower than the first withstand voltage, and is configured such that the first signal is input to the first element and the second signal is input to the second element.

The photoelectric conversion device includes a semiconductor layer provided with an avalanche photodiode, and an interconnection structure layer provided on a side of a first surface of the semiconductor layer. The interconnection structure layer includes an interconnection structure made of a metal material and overlapping with the avalanche multiplication region of the avalanche photodiode in a plan view. The interconnection structure includes a first interconnection, a second interconnection disposed farther from the first surface than the first interconnection, and a contact electrode electrically connecting the first interconnection and the second interconnection. An opening is provided in the first interconnection in a portion overlapping with the avalanche multiplication region in the plan view. The second interconnection is disposed so as to overlap an entire of the opening in the plan view. The contact electrode is arranged around the opening in the plan view.

To reduce an image quality deterioration by adjusting a sensitivity of a photoelectric conversion device, and appropriately counting an incident photon.SOLUTION: A photoelectric conversion device includes: a photoelectric conversion unit that generates a photon detection signal by an avalanche multiplication; a counter circuit that counts the photon detection signal output from the photoelectric conversion unit; a first period contained in a one frame; and a second period that is contained in the one frame, and is not overlapped with the first period after the first period. A value counted in the counter circuit on the basis of the one photon detection signal in the first period is larger than a value counted in the counter circuit on the basis of the one photon detection signal in the second period.SELECTED DRAWING: Figure 7

This technology relates to a photoelectric conversion device capable of reducing power consumption while ensuring a wide dynamic range. The photoelectric conversion device comprises: a photodiode that performs avalanche multiplication in response to incidence of photons; a pulse generation circuit that outputs a first control signal for controlling the photodiode to be in a standby state or a recharge state, and a second control signal for controlling the timing of photon detection; and a control circuit that controls the photodiode on the basis of the first control signal. The present technology can be applied to an imaging element.

According to an aspect of the present disclosure, an avalanche diode, a detection unit configured to detect an avalanche current generated by avalanche multiplication in the avalanche diode, a switch disposed between the avalanche diode and the detection unit, and a reset unit configured to reset a node between the switch and the detection unit. The reset unit resets the node during a period in which the switch is in an off state.

A photodetector (100) comprises: a semiconductor substrate having a first main surface and a second main surface opposite to the first main surface; an epitaxial layer formed on the semiconductor substrate; a multiplication region in the epitaxial layer that is substantially parallel to the first main surface and avalanche multiplies charges generated by photoelectric conversion on the semiconductor substrate; and a separation region that separates at least two of the multiplication regions.

The invention discloses a GaN-based bidirectional dual-waveband avalanche photodetector based on a back-to-back p-i-n structure, which comprises two back-to-back dual photodiode structures which share a p-type layer and grow on a substrate, namely a p-i-n structure taking GaN as an intrinsic layer and an SACM structure taking Al < 0.45 > Ga < 0.55 > N as an intrinsic layer. Compared with a traditional ultraviolet avalanche photodiode, the bidirectional dual-band avalanche photodiode can achieve avalanche multiplication under the forward bias voltage and the reverse bias voltage, and different working modes can be achieved by adjusting the external bias voltage. In a forward bias mode, the device is cut off at 365 nm, and in a reverse bias mode, the cut-off wavelength of the device is 281 nm, so that dual-band ultraviolet signal detection is realized, and the dual-band detection method is beneficial to accurate identification of signals and further popularization and application.

The present disclosure relates to an electronic device and an imaging element configured so as to be able to avoid further degradation in performance. The imaging element is provided with, for each of a plurality of pixels, a single-photon avalanche diode (SPAD) that generates avalanche multiplication as a result of the supply of a reverse bias voltage, the imaging element further comprising: a storage unit into which address information indicating an address of a defective pixel has been written; a digital processing circuit that outputs a pixel selection signal, for selecting the defective pixel, in accordance with the address information read from the storage unit; and a retention unit that is provided for each pixel and retains defect information indicating whether the pixel is a defective pixel. For each pixel, the retention unit provided in a pixel selected by the pixel selection signal output from the digital processing circuit retains defect information indicating that the pixel is defective, and outputs a control signal for blocking supply of the reverse bias voltage to the SPAD. The present technology can be applied to, for example, an imaging element in which a SPAD is used.

The present invention provides a distance image acquisition device and a distance image acquisition method that can extend the measurement distance and ensure distance accuracy. The distance image acquisition device (1) includes a distance measurement sensor (10) that detects the measurement light by transferring the charge generated in the charge generation region (36) corresponding to the incidence of measurement light emitted from a light source (2) and reflected by an object (OJ) to the charge accumulation region (24, 25) using a transfer gate electrode (42, 43). The charge generation region (36) includes an avalanche multiplication region that generates avalanche multiplication. The control unit (4) divides the entire distance range (70) of the measurement object into a plurality of intervals (71A to 71E), controls the distance measuring sensor (10) in such a manner that the time difference (TD) between the emission timing of the measurement light of the light source (2) and the transmission timing of the charge of the transmission gate electrodes (42, 43) is different between the plurality of intervals (71A to 71E), and performs measurement on the plurality of intervals, and generates a distance image of the entire distance range (70) based on the measurement results for the plurality of intervals (71A to 71E).

A solid-state imaging device having a plurality of pixels (10), each pixel (10) comprising: - a photoelectric conversion section (21) of a second conductivity type arranged in a surface layer portion of a surface of a semiconductor substrate (20) of a first conductivity type and converting light incident on the surface into an electric charge; - a charge holding section (22) of a second conductivity type which stores the electric charge generated in the photoelectric conversion section (21) and is arranged in the semiconductor substrate (20); - a multiplication gate electrode (31) capacitively coupled to the charge holding section (22) and disposed on the semiconductor substrate (20) via an insulating film (34); and - a cargo barrier section (26) which: - is arranged between the charge holding section (22) and the insulating film (34) at a position where the multiplication gate electrode (31) and the charge holding section (22) are capacitively coupled, - has a first conductivity type with a higher impurity concentration than the semiconductor substrate (20), - causes the charge holding section (22) to hold the electric charge until an electric field in a depth direction of the semiconductor substrate (20) reaches an electric field capable of avalanche multiplication when a voltage is applied to the multiplication gate electrode (31), and - the avalanche multiplication of the electric charge in the depth direction is generated when a predetermined voltage is applied to the multiplication gate electrode (31).

A photoelectric conversion device includes a photodiode configured to perform avalanche multiplication, a recharging circuit configured to perform a recharging operation to bring the photodiode after the avalanche multiplication into a state in which the avalanche multiplication can be performed again based on a first control signal including pulses that periodically repeat transitions from a first level to a second level, and a counter configured to count the number of occurrences of the avalanche multiplication by being enabled based on a second control signal. Before the counter is enabled based on the second control signal, the first control signal transitions from the first level to the second level and transitions from the second level to the first level.

The application relates to the technical field of photoelectric detection, and provides an avalanche multiplication photoelectric detector and a preparation method, the detector comprising a super surface structure, a second doped layer, a first doped layer, a multiplication layer, a charge layer, an absorption layer and a dielectric super surface layer which are arranged in sequence, the super surface structure is arranged on the dielectric super surface layer or arranged on the side surface of the dielectric super surface layer and the absorption layer close to the dielectric super surface layer, and the super surface structure penetrates along the thickness direction of the dielectric super surface layer; the second doped layer is formed in the absorption layer and located on the side of the absorption layer close to the super surface structure. The avalanche multiplication photoelectric detector provided by the application realizes the regulation and control of the phase, amplitude and polarization of the incident light field by integrating the super surface structure on the incident side of the absorption layer, so that the absorption rate of the detector is improved without increasing the thickness of the absorption layer, and the gain of the detector is improved, the device bandwidth is effectively expanded, the time jitter is reduced, and the noise is suppressed.

A multiplication type image sensor, comprising: a semiconductor layer having a first surface and a second surface; and a wiring layer provided on the second surface. The semiconductor layer includes a plurality of pixels arranged along the first surface. Each of the plurality of pixels includes: a first semiconductor region; a second semiconductor region formed on the second surface side relative to at least a portion of the first semiconductor region and divided for each of the plurality of pixels; and a well region formed in the second semiconductor region in a manner separated from the first semiconductor region and constituting a portion of a pixel circuit. At least a portion of the first semiconductor region and at least a portion of the second semiconductor region form an avalanche multiplication region.

A light detection device according to an embodiment of the present disclosure comprises: a semiconductor substrate having opposing first and second surfaces; a light-receiving section provided inside the semiconductor substrate to generate, by photoelectric conversion, carriers in accordance with an amount of light received; a multiplying section for avalanche multiplication of the carriers generated in the light-receiving section, the multiplying section being provided inside the semiconductor substrate and farther to the first-surface side than the light-receiving section, and being formed by the stacking of a first conductivity-type region and a second conductivity-type region of a different conductivity type than the first conductivity-type region; a first semiconductor layer provided at least partially on the second-surface side of the semiconductor substrate and having the same conductivity type as the first conductivity-type region; and a light-transmissive first electrode that is stacked on the first semiconductor layer and electrically connected to the first semiconductor layer.

The invention discloses an avalanche photodetector structure with an adjustable receiving rate and an avalanche photodetector thereof, the avalanche photodetector structure comprises an APD, the APD is composed of a positive electrode layer, an absorption layer, a gain layer, a substrate layer and a negative electrode layer, the gain layer comprises a charge control region and an avalanche multiplication region, and the negative electrode layer only comprises a negative electrode; the amplifier further comprises a plurality of multiplication control regions, at least one added avalanche multiplication region and a negative electrode added corresponding to the avalanche multiplication region, the multiplication control regions and the added avalanche multiplication region are located in the gain layer, the avalanche multiplication regions are arranged independently, the negative electrodes are arranged independently, and the multiplication control regions, the avalanche multiplication regions and the negative electrodes are arranged in a one-to-one correspondence mode; the multiplication control region and the charge control region act independently or jointly to realize regulation and control of two or more avalanche multiplication regions. The APD has the advantages that the APD gain can be adjusted in a large range, two-gear adjustment of low bandwidth and high gain and high bandwidth and low gain is achieved, and the APD can be used for receiving optical signals with different rates.

To suppress deterioration of device characteristics depending on avalanche multiplication.SOLUTION: A photoelectric conversion device comprises: a first APD; a first pulse generation circuit which generates a first pulse signal on the basis of output from the first APD; a first switch provided between a first power source, which supplies a first voltage, and one terminal of the first APD; and a second switch provided between a second power source, which supplies a second voltage, and one terminal of the first APD. The first switch is brought into an on-state, such that the first APD is brought into a recharge state, and the first switch is brought into an off-state, such that the first APD is brought into a standby state. The second switch is brought into an on-state, such that the first APD is brought into an inactive state, and the second switch is brought into an off-state, such that the first APD is brought into an active state. A period in which the first switch is in the on-state is different from a period in which the second switch is in the on-state.SELECTED DRAWING: Figure 6

A device includes a photodiode performing avalanche multiplication, a recharge circuit, a control signal generation circuit that generates a control signal to control the recharge circuit, a pulse counting circuit that generates a pulse signal from a signal output by the photodiode, and a counter that counts the pulse signal output by the pulse counting circuit. The control signal generation circuit is configured to output, based on a clock signal and a mask signal, the first-period control signal and the second-period control signal, which is longer than the first period. When a counter value reaches a threshold, the signal output by the control signal generation circuit can be switched from the first-period control signal to the second-period control signal.

A light-sensing device (1) for sensing incident light (L) of a predetermined wavelength includes a photodiode substrate (100) having a P-N junction structure (110, 120, 130) for avalanche multiplication and a first surface (100a) and a second surface (100b) facing each other. The device has an absorption structure (150, 160) including a metal layer (150) formed on the first surface of the photodiode substrate and a functional layer (160) formed on the metal layer which increases an absorption rate of the metal layer with respect to light of the predetermined wavelength.

An image capturing apparatus comprises a photoelectric conversion element having a plurality of pixels, wherein each pixel comprises a sensor unit comprising an avalanche photodiode configured to generate pulses in response to photons incident thereon, a counter configured to count the number of the pulses, a memory configured to store count values of the counter, and a switch configured to switch the avalanche photodiode between a standby state in which avalanche multiplication is possible and a recharge state, a signal generation unit configured to supply a clock signal to the switch, a light emitting unit configured to perform pulse light emission for illuminating a subject in synchronization with the clock signal, and a control unit configured to perform a plurality of exposure operations by the counter according to timing of the pulse light emission and a predetermined image-capturing distance range for capturing images of a subject existing in the predetermined image-capturing distance range, and configured to shift relative timing of the clock signal and the pulse light emission by a predetermined phase for each predetermined exposure operation.

A light receiving device according to an embodiment includes: a light receiving element (1000) in which a current flows because of avalanche multiplication caused in accordance with a photon that has been incident on the light receiving element in a state in which the light receiving element is charged to a predetermined potential based on a bias voltage, the light receiving element returning to said state by a recharge current; a detection unit (1002) configured to detect the current, and invert an output signal in a case in which a current value of the current exceeds a threshold; a current source (1001) configured to supply the recharge current to the light receiving element; and a switch unit (1010) configured to control supply of the bias voltage to the light receiving element in accordance with the output signal of the detection unit.

The invention relates to the technical field of electron emission, and discloses a large-current pulse micro-channel plate electron emission source and an X-ray generation device. According to the electron emission source, an electron emission function layer at the head end of an MCP assembly is excited by adopting a rapidly regulated and controlled UV LED light source, and ultrafast time sequence modulation of electron beams is realized through an avalanche multiplication process of the electron beams in the MCP. By adopting a specific high-lead, low-alkali or alkali-free glass component or ceramic substrate composite functional film layer structure, the MCP assembly has long service life stability of low resistance, high current output and high power density operation. Independent bias voltage and gating voltage synchronous with electronic pulse are applied to the MCP assembly through the driving control unit, accurate thermal management is carried out in combination with a pulse-charging circulation mode, and the problems of charge compensation and thermal limitation under large current output are effectively solved. The electron emission source breaks through the bottleneck, supports peak current density exceeding 100 mA / cm under submicrosecond pulse, and realizes hundred microampere level steady-state current output under millisecond level long pulse.

The present application relates to a kind of diamond-based gallium oxide heterojunction avalanche photodetector and its preparation method, adopt p + Diamond substrate, sequentially epitaxial p ‑ Diamond multiplication layer, n ‑ Ga2O3 charge layer, i-Ga2O3 absorption layer and n + Ga2O3 contact layer, form separate absorption multiplication II-type heterojunction mesa structure;Through ICP etching exposure substrate, and utilize BOE wet etching and nitrogen annealing repair side wall damage;Finally, ohmic contact electrode is formed at top and bottom respectively.Under reverse bias, heterojunction built-in electric field and mesa edge local electric field cooperate, realize carrier avalanche multiplication, can realize single-photon level detection to ≤280nm solar blind waveband.Diamond substrate high thermal conductivity significantly inhibits Ga2O3 thermal accumulation, improves device stability and life.Process is fully compatible with MPCVD / MOCVD and standard semiconductor process, applicable to deep ultraviolet weak light imaging and other fields.

This radiation detector comprises: a phosphor that converts radiation into visible light; an avalanche photodiode that detects the visible light; a reset switch that makes it possible to carry out a reset operation in which a potential is applied to the avalanche photodiode; and a control means that controlling the reset switch such that the reset operation is carried out according to detection of avalanche multiplication in the avalanche photodiode.