55 results about "Avalanche multiplication" patented technology

A light detection apparatus according to an embodiment of the present disclosure includes a semiconductor substrate, a light receiver, a trench, a multiplier that is a first electrically-conductive type, and a contactor. The semiconductor substrate has a first surface and a second surface facing each other, and has a pixel array in which a plurality of pixels is disposed into an array shape in an in-plane direction. The light receiver is provided inside the semiconductor substrate for each of the pixels, and generates, through photoelectric conversion, carriers in accordance with an amount of light received. The trench is provided, for each of the pixels, to the first surface of the semiconductor substrate. The multiplier that is the first electrically-conductive type is provided to a bottom surface of the trench, and allows the carriers generated in the light receiver to undergo avalanche multiplication. The contactor includes an electrically-conductive material buried in the trench, and is in contact with the multiplier.

The application relates to the technical field of photoelectric detection, and provides an avalanche multiplication photoelectric detector and a preparation method, the detector comprising a super surface structure, a second doped layer, a first doped layer, a multiplication layer, a charge layer, an absorption layer and a dielectric super surface layer which are arranged in sequence, the super surface structure is arranged on the dielectric super surface layer or arranged on the side surface of the dielectric super surface layer and the absorption layer close to the dielectric super surface layer, and the super surface structure penetrates along the thickness direction of the dielectric super surface layer; the second doped layer is formed in the absorption layer and located on the side of the absorption layer close to the super surface structure. The avalanche multiplication photoelectric detector provided by the application realizes the regulation and control of the phase, amplitude and polarization of the incident light field by integrating the super surface structure on the incident side of the absorption layer, so that the absorption rate of the detector is improved without increasing the thickness of the absorption layer, and the gain of the detector is improved, the device bandwidth is effectively expanded, the time jitter is reduced, and the noise is suppressed.

The invention discloses an avalanche photodetector structure with an adjustable receiving rate and an avalanche photodetector thereof, the avalanche photodetector structure comprises an APD, the APD is composed of a positive electrode layer, an absorption layer, a gain layer, a substrate layer and a negative electrode layer, the gain layer comprises a charge control region and an avalanche multiplication region, and the negative electrode layer only comprises a negative electrode; the amplifier further comprises a plurality of multiplication control regions, at least one added avalanche multiplication region and a negative electrode added corresponding to the avalanche multiplication region, the multiplication control regions and the added avalanche multiplication region are located in the gain layer, the avalanche multiplication regions are arranged independently, the negative electrodes are arranged independently, and the multiplication control regions, the avalanche multiplication regions and the negative electrodes are arranged in a one-to-one correspondence mode; the multiplication control region and the charge control region act independently or jointly to realize regulation and control of two or more avalanche multiplication regions. The APD has the advantages that the APD gain can be adjusted in a large range, two-gear adjustment of low bandwidth and high gain and high bandwidth and low gain is achieved, and the APD can be used for receiving optical signals with different rates.

An image capturing apparatus comprises a photoelectric conversion element having a plurality of pixels, wherein each pixel comprises a sensor unit comprising an avalanche photodiode configured to generate pulses in response to photons incident thereon, a counter configured to count the number of the pulses, a memory configured to store count values of the counter, and a switch configured to switch the avalanche photodiode between a standby state in which avalanche multiplication is possible and a recharge state, a signal generation unit configured to supply a clock signal to the switch, a light emitting unit configured to perform pulse light emission for illuminating a subject in synchronization with the clock signal, and a control unit configured to perform a plurality of exposure operations by the counter according to timing of the pulse light emission and a predetermined image-capturing distance range for capturing images of a subject existing in the predetermined image-capturing distance range, and configured to shift relative timing of the clock signal and the pulse light emission by a predetermined phase for each predetermined exposure operation.

A light receiving device according to an embodiment includes: a light receiving element (1000) in which a current flows because of avalanche multiplication caused in accordance with a photon that has been incident on the light receiving element in a state in which the light receiving element is charged to a predetermined potential based on a bias voltage, the light receiving element returning to said state by a recharge current; a detection unit (1002) configured to detect the current, and invert an output signal in a case in which a current value of the current exceeds a threshold; a current source (1001) configured to supply the recharge current to the light receiving element; and a switch unit (1010) configured to control supply of the bias voltage to the light receiving element in accordance with the output signal of the detection unit.

The invention relates to the technical field of electron emission, and discloses a large-current pulse micro-channel plate electron emission source and an X-ray generation device. According to the electron emission source, an electron emission function layer at the head end of an MCP assembly is excited by adopting a rapidly regulated and controlled UV LED light source, and ultrafast time sequence modulation of electron beams is realized through an avalanche multiplication process of the electron beams in the MCP. By adopting a specific high-lead, low-alkali or alkali-free glass component or ceramic substrate composite functional film layer structure, the MCP assembly has long service life stability of low resistance, high current output and high power density operation. Independent bias voltage and gating voltage synchronous with electronic pulse are applied to the MCP assembly through the driving control unit, accurate thermal management is carried out in combination with a pulse-charging circulation mode, and the problems of charge compensation and thermal limitation under large current output are effectively solved. The electron emission source breaks through the bottleneck, supports peak current density exceeding 100 mA / cm under submicrosecond pulse, and realizes hundred microampere level steady-state current output under millisecond level long pulse.

The present application relates to a kind of diamond-based gallium oxide heterojunction avalanche photodetector and its preparation method, adopt p + Diamond substrate, sequentially epitaxial p ‑ Diamond multiplication layer, n ‑ Ga2O3 charge layer, i-Ga2O3 absorption layer and n + Ga2O3 contact layer, form separate absorption multiplication II-type heterojunction mesa structure;Through ICP etching exposure substrate, and utilize BOE wet etching and nitrogen annealing repair side wall damage;Finally, ohmic contact electrode is formed at top and bottom respectively.Under reverse bias, heterojunction built-in electric field and mesa edge local electric field cooperate, realize carrier avalanche multiplication, can realize single-photon level detection to ≤280nm solar blind waveband.Diamond substrate high thermal conductivity significantly inhibits Ga2O3 thermal accumulation, improves device stability and life.Process is fully compatible with MPCVD / MOCVD and standard semiconductor process, applicable to deep ultraviolet weak light imaging and other fields.

This radiation detector comprises: a phosphor that converts radiation into visible light; an avalanche photodiode that detects the visible light; a reset switch that makes it possible to carry out a reset operation in which a potential is applied to the avalanche photodiode; and a control means that controlling the reset switch such that the reset operation is carried out according to detection of avalanche multiplication in the avalanche photodiode.

A photoelectric conversion device includes: a photoelectric conversion unit that generates a photon detection signal by using avalanche multiplication; a counter circuit that counts the photon detection signal output from the photoelectric conversion unit; a first period included in one frame; and a second period that is included in the one frame, that follows the first period, and that does not overlap with the first period. A count value based on one photon detection signal by the counter circuit in the first period is greater than a count value based on the one photon detection signal by the counter circuit in the second period.

An opto-electric conversion device, an opto-electric conversion system, and a movable body are provided. The opto-electric conversion device includes a plurality of avalanche photodiodes. Each of the plurality of avalanche photodiodes includes an avalanche multiplication unit formed by a first semiconductor region of a first conductivity type disposed at a first depth, and a second semiconductor region of a second conductivity type different from the first conductivity type disposed at a second depth deeper than the first depth. A fourth semiconductor region different in at least one of a conductivity type and an impurity concentration from a third semiconductor region of the second conductivity type is disposed at a position shallower than the third semiconductor region, and a depth of a boundary portion between the third semiconductor region and the fourth semiconductor region is deeper than the avalanche multiplication unit.

A light detection device according to one embodiment of the present invention comprises: a first substrate having a first surface and a second surface facing each other, and having a pixel array section in which a plurality of pixels are arranged in an array in an in-plane direction; a second substrate laminated on the first surface side of the first substrate and having a semiconductor layer provided with at least one transistor; a light-receiving element that is provided inside the first substrate for each of the pixels, and that has a light-receiving unit that generates a carrier corresponding to the amount of received light by photoelectric conversion, and a multiplication unit that avalanche multiplies the carrier generated by the light-receiving unit; a first contact layer provided on the first surface of the first substrate and electrically connected to the light receiving unit; and a shielding layer provided on a path connecting the first contact layer and the at least one transistor, and to which a predetermined potential is applied.

This invention relates to the field of optical communication technology and proposes an optoelectronic fusion transmitter and method based on all-silicon technology. The transmitter includes an optical transmitter, an all-silicon photodetector, and a control circuit. The all-silicon photodetector performs real-time in-situ acquisition of multi-wavelength random polarization modulation signals and optical signals from internal nodes of the optical transmitter. The optical signals are converted into monitoring electrical signals and sent to the control circuit. The all-silicon photodetector is a serpentine waveguide avalanche photodetector. An avalanche multiplication region with a reverse bias voltage is configured at the starting end of the serpentine waveguide. As the optical signals from internal nodes of the optical transmitter propagate along the serpentine waveguide, they are absorbed segment by segment, generating primary photogenerated carriers. These carriers are amplified by the avalanche multiplication effect in the high-field region to form the monitoring electrical signal. By employing an all-silicon photodetector, polarization management, multi-wavelength channel allocation, electro-optic modulation, and closed-loop power control are integrated onto a unified all-silicon technology platform, improving the integration level.

This invention discloses an avalanche photodetector structure with adjustable receiving rate and the avalanche photodetector thereof, including an APD. The APD is composed of a positive electrode layer, an absorption layer, a gain layer, a substrate layer, and a negative electrode layer. The gain layer includes a charge control region and an avalanche multiplication region, and the negative electrode layer includes only one negative electrode. It also includes multiple multiplication control regions, at least one additional avalanche multiplication region, and a corresponding additional negative electrode. The multiplication control regions and the additional avalanche multiplication region are all located within the gain layer. The avalanche multiplication regions and the negative electrodes are independently configured, and the multiplication control regions, avalanche multiplication regions, and negative electrodes are configured in a one-to-one correspondence. The multiplication control regions and the charge control regions can act individually or jointly to achieve modulation of two or more avalanche multiplication regions. Advantages: The gain of the APD of this invention can be adjusted over a wide range, achieving two levels of adjustment: low bandwidth high gain and high bandwidth low gain, which can be used to receive optical signals at different rates.

The light sensor (1) of the present application is provided with: a charge generation region (29) that generates charges in accordance with incident light; a charge collection region (33) that transfers the charges generated in the charge generation region (29); and at least one transfer gate electrode (41) that is arranged on a transfer region (35) between the charge generation region (29) and the charge collection region (33). The charge generation region (29) includes: an avalanche multiplication region (23) that generates avalanche multiplication; and a sloped potential formation region (59) that forms a sloped potential that is sloped in such a manner that the potential becomes lower as the transfer region (35) is approached, in the charge generation region (29).

To provide a photoelectric conversion device capable of solving a problem caused in a standby state where a charging means and a power source are separated.SOLUTION: An avalanche photodiode including a first terminal and a second terminal; a charge unit configured to control electrical connection between the first terminal and a first power supply; a second power supply electrically connected to the second terminal; An amplitude conversion unit configured to reduce an amplitude of a voltage output from the first terminal by avalanche multiplication of the avalanche photodiode, and a voltage holding unit connected between the first terminal and the amplitude conversion unit and configured to hold the voltage of the first terminal so that the voltage of the first terminal does not exceed a predetermined value.SELECTED DRAWING: Figure 6

The disclosed semiconductor device includes a region provided with a plurality of circuit blocks each including an avalanche photodiode. A part of the plurality of circuit blocks is a pixel circuit further including a first control circuit configured to control the avalanche photodiode to a standby state in which an avalanche multiplication is possible and a recharging state in which the avalanche photodiode is returned to a state in which the avalanche multiplication is possible after the avalanche multiplication occurs, in response to the first control signal, and another part of the plurality of circuit blocks is a signal generation circuit configured to generate a signal corresponding to a waveform of the first control signal. The signal generation circuit is configured not to output a signal corresponding to the output of the avalanche photodiode.

The devices and methods herein relate to a Mie Avalanche Photodiode (Mie-APD). A Mie-APD leverages Mie resonant scattering and avalanche multiplication to generate current. The Mie-APD features a material layer, an absorption region, and a multiplication region. The multiplication region is configured for multiplying free carriers generated when the absorption region absorbs an electromagnetic perturbation. The material layer serves as a substrate for the absorption region and includes the multiplication region. The structure of the Mie-APD allows for the enhancement of spatial resolution, dynamic range, noise characteristics, and data acquisition speed in applications such as hazard detection, 3D sensing, low light imaging, astronomy, and medical imaging, among others. Variations to the structure, design, and fabrication of the Mie-APD can provide further improved performance and functionality such as enhanced response to specific wavelengths and / or polarizations.WO

This invention belongs to the field of optoelectronics technology, specifically relating to a narrowband near-infrared thermionic photodetector, its fabrication method, and its applications. A top-layer metal grating absorbs near-infrared light, generating thermionic electrons that are injected into an ultrathin silicon film, where they are collected by the bottom electrode to form a photocurrent. The top-layer metal grating forms a Schottky contact with the silicon thin film, enabling near-infrared light detection below the silicon energy bandgap. The small thickness of the metal grating increases photoemission within the metal, providing more opportunities for thermionic emission over the Schottky barrier, further improving the photodetector efficiency. Simultaneously, by adjusting the width of the metal grating, the resonant wavelength of the detector can be changed, achieving a wavelength-tunable near-infrared photodetector. Due to the thinness of silicon, applying a small bias voltage can induce a strong electric field in the silicon film, triggering an avalanche multiplication effect. This invention broadens the operating wavelength range of traditional silicon-based photodetectors and achieves tunable peak responsivity, showing great promise for applications in silicon-based optoelectronic devices.

The invention discloses an optimization method for a grid mesh structure of a micro-grid gas detector. The optimization method comprises the following steps: 1, establishing a finite element model of the micro-grid gas detector; 2, converting the obtained target candidate structure set into a Garfield + + readable format, and importing the converted target candidate structure set into a Garfield + + readable format; 3, generating a specified number of spatially distributed initial ionization electrons in the drift region, and tracking the drift trajectory of the initial ionization electrons from the generation position to the grid mesh; 4, performing avalanche multiplication on the penetrating electrons to generate secondary electrons, tracking movement tracks of the secondary electrons and ions, and calculating electron gain and an ion feedback coefficient; 5, outputting an original current signal and obtaining an output voltage pulse signal; and 6, analyzing a plurality of performance indexes obtained under different grid structure parameters, and determining a comprehensive score through an analytic hierarchy process to determine the optimal configuration of the grid structure parameters. According to the method, the grid mesh structure is optimized from the microcosmic electron behavior process for the first time, the trial and error cost can be remarkably reduced, and physical simulation and parameter optimization functions are deeply fused.

The present application relates to a kind of non-scanning single-photon polarization three-dimensional imaging method, comprising: constructing pulse laser echo photon number calculation model: pulse laser emits laser pulse, after each light pulse is irradiated to target, the photon number of return to single-photon avalanche photodetector each pixel is related to detection distance;Construct single-photon detector signal and noise model: signal photon and background photon are incident on the photosensitive surface of detector to complete photon injection, based on the quantum efficiency of detector, photoelectric conversion is generated echo electron and canister noise electron, noise electron is generated by thermal current, tunneling current, then carries out electric injection, then based on avalanche probability, avalanche multiplication is completed, and finally, the signal is read out through avalanche signal detection;Construct polarization modulation laser radar ranging model, improve target polarization three-dimensional imaging distance.

The present application relates to a back-illuminated ultraviolet avalanche photodiode based on delta-doping and a preparation method thereof, comprising: an N-type doped silicon substrate layer; an intrinsic multiplication region I layer, an epitaxial P-type doped silicon layer and a P-type boron delta-doping layer which are sequentially stacked in a direction away from the N-type doped silicon substrate layer and located above the N-type doped silicon substrate layer; wherein the N-type doped silicon substrate layer is located at the back light side of the back-illuminated ultraviolet avalanche photodiode, the P-type boron delta-doping layer is located at the light side of the back-illuminated ultraviolet avalanche photodiode, and the P-type boron delta-doping layer is used to perform a surface passivation function; the intrinsic multiplication region I layer is configured to serve as an avalanche multiplication region under a reverse bias, and the epitaxial P-type doped silicon layer and the N-type doped silicon substrate layer respectively serve as electrodes located on both sides of the avalanche multiplication region to form a PIN junction structure. The device can systematically and cooperatively optimize the ultraviolet detector.

In an embodiment, this photodetector (1) comprises: a light reception unit (13) that generates carriers through photoelectric conversion; and a multiplication unit (14) that increases the carriers generated by the light reception unit (13) by avalanche multiplication. The multiplication unit (14) has a plurality of multiplication regions for increasing the carriers, and the plurality of multiplication regions are provided at opposing positions.

The invention relates to the technical field of photoelectric detection, and provides an avalanche multiplication photoelectric detector and a preparation method thereof.The detector comprises a super-surface structure, a second doping layer, a first doping layer, a multiplication layer, a charge layer, an absorption layer and a medium super-surface layer, and the first doping layer, the multiplication layer, the charge layer, the absorption layer and the medium super-surface layer are sequentially arranged in a stacked mode. Or the metasurface structure is arranged on the surfaces of the sides, close to the dielectric metasurface layer, of the dielectric metasurface layer and the absorption layer, and the metasurface structure penetrates in the thickness direction of the dielectric metasurface layer; the second doping layer is formed in the absorption layer and located on the side, close to the metasurface structure, of the absorption layer. According to the avalanche multiplication photoelectric detector provided by the invention, the metasurface structure is integrated on the incident side of the absorption layer, so that the phase, the amplitude and the polarization of an incident light field are regulated and controlled, the absorption rate of the detector is improved on the premise that the thickness of the absorption layer is not increased, the gain of the detector is improved, and meanwhile, the performance of the avalanche multiplication photoelectric detector is improved. The bandwidth of the device is effectively expanded, time jitter is reduced, and noise is suppressed.

The present disclosure relates to a light reception element and an electronic device that make it possible to achieve better performance.Provided is a SPAD element including an avalanche multiplication region provided at a junction surface between an N-type diffusion layer and a P-type diffusion layer provided on a side of a sensor substrate opposite from a light reception surface of the sensor substrate, a hole accumulation layer provided so as to surround a lateral surface and a light reception surface of a well provided in the sensor substrate, a pinning layer provided outside the hole accumulation layer, and an in-pixel trench structure provided in a pixel region, the pinning layer being formed all over an outer peripheral surface of the in-pixel trench structure. The present technology is applicable to, for example, a distance image sensor that performs time-of-flight (ToF)-based distance measurement.

The invention relates to an imaging apparatus, an imaging method, a computer program product, and a storage medium. The image pickup apparatus includes: a photoelectric conversion element having a plurality of pixels including a sensor unit, the sensor unit including: an avalanche photodiode generating a pulse in response to photons incident thereon; the counter is used for counting the number of the pulses; a memory for storing the count value of the counter; and a switch that switches the avalanche photodiode between a standby state in which avalanche multiplication may occur and a recharged state; a signal generation unit that supplies a clock signal to the switch; a light emitting unit that performs pulsed light emission for illuminating the subject in synchronization with the clock signal; and a control unit that uses the counter to perform a plurality of exposure operations according to the timing of the pulsed light emission and a predetermined imaging distance range to capture an image of a subject present within the predetermined imaging distance range, the relative timing of the clock signal and the pulsed light emission being shifted by a predetermined phase for each predetermined exposure operation.

Provided is a photodetection device capable of suppressing characteristic fluctuation of a photoelectric conversion element without requiring a complicated circuit.A photodetection device according to the present technology includes: a first semiconductor substrate provided with a photoelectric conversion element having an avalanche multiplication region and having first and second surfaces facing each other; a laminated structure disposed on the first surface side and having at least an insulating layer and a conductive layer laminated in this order from a side closer to the first surface; and a potential application structure for applying a potential to the conductive layer. According to the photodetection device of the present technology, it is possible to provide the photodetection device capable of suppressing characteristic fluctuation of the photoelectric conversion element without requiring a complicated circuit.

The present invention provides an imaging device that can suppress image quality degradation during the recharge period of an avalanche photodiode. [Solution] Each pixel comprises a photoelectric conversion element having a sensor unit that emits pulses in response to photons incident on an avalanche photodiode, a counter that counts the number of pulses, a memory that stores the count value of the counter, and a switch that switches the avalanche photodiode between a standby state capable of avalanche multiplication and a recharge state; a signal generation unit that supplies a clock signal to the switch; a light emission unit that emits pulsed light to illuminate a subject in synchronization with the clock signal; and a control unit that performs multiple exposure operations by the counter according to the timing of pulse emission and the predetermined imaging distance range in order to image a subject that is within a predetermined imaging distance range, and shifts the relative timing of the clock signal and pulse emission by a predetermined phase for each predetermined exposure operation.

The invention provides a semiconductor device, a forming method thereof and a photoelectric detector. The semiconductor device comprises a substrate, an avalanche multiplication layer, a light absorption layer, a first electrode and a second electrode. The avalanche multiplication layer is located on the surface of the substrate, and the avalanche multiplication layer is located between the light absorption layer and the substrate. A first type dopant is doped in the light absorption layer, and the concentration of the first type dopant is greater than or equal to a preset concentration. The first electrode is connected with the avalanche multiplication layer, and the second electrode is connected with the light absorption layer. A single-carrier detection scheme is realized through dielectric relaxation, namely redundant multi-carriers are removed, the mobility limit of the multi-carriers is reduced, and a higher detection rate is realized.

The photoelectric conversion device is characterized by comprising: a photoelectric conversion element configured to generate a photon detection signal by avalanche multiplication; a circuit configured to control a first state in which a first terminal of the photoelectric conversion element is connected to a power supply voltage and a second state in which a resistance between the first terminal and the power supply voltage is higher than in the first state; a counter circuit connected to the photoelectric conversion element; a waveform shaping circuit disposed between the photoelectric conversion element and the counter circuit; and a gate circuit connected between an output node of the waveform shaping circuit and an input node of the counter circuit, and configured to control whether to input an output signal of the waveform shaping circuit to the counter circuit.