The invention provides an LED flip chip manufacturing method and an LED flip chip. The method includes the steps of sequentially growing a buffer layer, an intrinsic semiconductor layer, an N type semiconductor layer, a light-emitting layer and a P type semiconductor layer on a substrate so as to form an epitaxial layer, removing part of the P type semiconductor layer and part of the light-emitting layer to expose part of the N type semiconductor layer, sequentially forming a transparent conducting layer and a DBR layer on the surface of the P type semiconductor layer, forming a metal reflection layer on the surface of the DBR layer, forming through holes in the same positions of the DBR layer and the metal reflection layer to expose part of the N type semiconductor layer and part of the transparent conducting layer, and forming metal conducting layers on the through holes of the DBR layer and the through holes of the metal reflection layer. By means of the method, the problems that when the LED flip chip is manufactured based on the existing technology, due to the limitation of the performance of metal materials, the requirement for the reflection rate and the requirement for electrical conductivity can not be taken into consideration at the same time when the metal reflection layer is manufactured, and the reflection efficiency is lowered are solved.