30results about How to "High power application" patented technology

The invention is related to a cathode material comprising particles having a lithium metal phosphate core and a pyrolytic carbon deposit, said particles having a synthetic multimodal particle size distribution comprising at least one fraction of micron size particles and one fraction of submicron size particles, said lithium metal phosphate having formula LiMPO4 wherein M is at least Fe or Mn.Said material is prepared by method comprising the steps of providing starting micron sized particles and starting submicron sized particles of at least one lithium metal phosphate or of precursors of a lithium metal phosphate; mixing by mechanical means said starting particles; making a pyrolytic carbon deposit on the lithium metal phosphate starting particles before or after the mixing step, and on their metal precursor before or after mixing the particles; optionally adding carbon black, graphite powder or fibers to the said lithium metal phosphate particles before the mechanical mixing.

Objects are to provide a semiconductor device for high power application in which a novel semiconductor material having high productivity is used and to provide a semiconductor device having a novel structure in which a novel semiconductor material is used. The present invention is a vertical transistor and a vertical diode each of which has a stacked body of an oxide semiconductor in which a first oxide semiconductor film having crystallinity and a second oxide semiconductor film having crystallinity are stacked. An impurity serving as an electron donor (donor) which is contained in the stacked body of an oxide semiconductor is removed in a step of crystal growth; therefore, the stacked body of an oxide semiconductor is highly purified and is an intrinsic semiconductor or a substantially intrinsic semiconductor whose carrier density is low. The stacked body of an oxide semiconductor has a wider band gap than a silicon semiconductor.

A battery pack includes multiple power bus lines connecting a quantity of cell strings in parallel, wherein each cell string includes multiple cells connected in series. The battery pack further has multiple conductors providing electrical communication between the cell strings such that a cell in one cell string is connected in parallel with a cell in other battery strings.

A method of coupling a high-power optical signal between an optical fiber and a mating optical component, the optical signal ranging in wavelength from x to y, and having a first diameter while propagating in a mode field within the fiber, the method comprising: (a) converting the high-power optical signal between the first diameter in the fiber and a second diameter significantly greater than the first diameter using a GRIN lens fused to an end of the fiber, the GRIN lens having a diameter substantially the same as that of the optical fiber and a length l complying with the following equation:¼x+½nx≦l≦¼y+½ny,wherein n=0, 1, 2, 3 . . . 100;(b) establishing physical contact between the GRIN lens and a coupling surface of the mating optical component; and (c) while the high-power optical signal is at the second diameter, optically coupling it between the lens and the mating optical component.

Provided is a semiconductor device for high power application including a novel semiconductor material with high productivity. Alternatively, provided is a semiconductor device having a novel structure in which the novel semiconductor material is used. Provided is a vertical transistor including a channel formation region formed using an oxide semiconductor which has a wider band gap than a silicon semiconductor and is an intrinsic semiconductor or a substantially intrinsic semiconductor with impurities that can serve as electron donors (donors) in the oxide semiconductor removed. The thickness of the oxide semiconductor is greater than or equal to 1 μm, preferably greater than 3 μm, more preferably greater than or equal to 10 μm, and end portions of one of electrodes that are in contact with the oxide semiconductor is placed inside end portions of the oxide semiconductor.

A solid state Raman laser includes a laser pump for producing a first radiation at a high power and at a first wavelength along an optical path, a solid Raman active medium in the optical path of the first radiation, the medium including single crystal diamond having a first surface and a second surface, where the first radiation at a high power produces stimulated Raman scattering in the medium and the medium generates a second radiation at a second wavelength, a first optical element in the optical path of the first radiation, wherein the first optical element allows the first wavelength to be transmitted and allows the second wavelength to be reflected, and a second optical element in the optical path of the first radiation, wherein the second optical element allows the first wavelength to be transmitted and allows the second wavelength to be reflected.

A light emitting diode (LED) driving device includes a power factor correction (PFC) circuit, a bridge switch circuit, a resonant circuit, a transformer and a feedback circuit. The PFC circuit adjusts an output signal thereof based on a feedback signal. The bridge switch circuit transforms the output signal of the PFC circuit into a pulse signal. The resonant circuit resonates and outputs a sinusoidal signal to a primary-side of the transformer based on the pulse signal. The feedback circuit outputs the feedback signal to the PFC circuit in response to a primary-side current of the transformer. Therefore, an output current of the LED driving device is adjusted through modulating the feedback circuit.

The present invention provides a system and method of removing heat from an MR imaging device while maintaining internal and external temperatures below maximum operating limits, thereby enabling higher power applications for faster imaging with improved image quality as well as, allowing longer scan times for interventional procedures. The system includes a vacuum chamber housing the gradient coils and a vacuum pump connected thereto to regulate the pressure and humidity within the chamber. A heat exchanger, coolant pump, and controller are provided to regulate the temperature of coolant designed to dissipate heat from the gradient coils in response to at least one temperature sensor.

The invention is related to a cathode material comprising particles having a lithium metal phosphate core and a pyrolytic carbon deposit, said particles having a synthetic multimodal particle size distribution comprising at least one fraction of micron size particles and one fraction of submicron size particles, said lithium metal phosphate having formula LiMPO4 wherein M is at least Fe or Mn.Said material is prepared by method comprising the steps of providing starting micron sized particles and starting submicron sized particles of at least one lithium metal phosphate or of precursors of a lithium metal phosphate; mixing by mechanical means said starting particles; making a pyrolytic carbon deposit on the lithium metal phosphate starting particles before or after the mixing step, and on their metal precursor before or after mixing the particles; optionally adding carbon black, graphite powder or fibers to the said lithium metal phosphate particles before the mechanical mixing.

A light emitting diode (LED) driving device includes a power factor correction (PFC) circuit, a bridge switch circuit, a resonant circuit, a transformer and a feedback circuit. The PFC circuit adjusts an output signal thereof based on a feedback signal. The bridge switch circuit transforms the output signal of the PFC circuit into a pulse signal. The resonant circuit resonates and outputs a sinusoidal signal to a primary-side of the transformer based on the pulse signal. The feedback circuit outputs the feedback signal to the PFC circuit in response to a primary-side current of the transformer. Therefore, an output current of the LED driving device is adjusted through modulating the feedback circuit.

The present invention improves the geometry of ferrite circulators in order to increase the average power handling by decreasing the temperature rise in the ferrite and associated adhesive bonds. Embodiments of the present invention utilize dielectric attachments on the sides of the ferrite element, which maximizes the area of contact and minimizes the path length from the ferrite element out to the thermally conductive attachments.

The present invention improves the geometry of ferrite circulators in order to increase the average power handling by decreasing the temperature rise in the ferrite and associated adhesive bonds. Embodiments of the present invention utilize dielectric attachments on the sides of the ferrite element, which maximizes the area of contact and minimizes the path length from the ferrite element out to the thermally conductive attachments.

A lithium ion secondary battery which includes: a negative electrode plate 406 in which a negative electrode mixture layer 404 is formed on each of both surfaces of a negative electrode current collector 401 containing copper as a principle component and having a sheet shape; a positive electrode plate 407 in which a positive electrode mixture layer 405 is formed on each of both surfaces of a positive electrode current collector 402 containing aluminum as a principle component and having a sheet shape; and a separator 403 holding an electrolyte. The negative electrode plate 406, the positive electrode plate 407 and the separator 403 are spirally wound or stacked. The thickness of the positive electrode current collector 402 is smaller than the thickness of the negative electrode current collector 401.

Provided is a semiconductor device for high power application including a novel semiconductor material with high productivity. Alternatively, provided is a semiconductor device having a novel structure in which the novel semiconductor material is used. Provided is a vertical transistor including a channel formation region formed using an oxide semiconductor which has a wider band gap than a silicon semiconductor and is an intrinsic semiconductor or a substantially intrinsic semiconductor with impurities that can serve as electron donors (donors) in the oxide semiconductor removed. The thickness of the oxide semiconductor is greater than or equal to 1 μm, preferably greater than 3 μm, more preferably greater than or equal to 10 μm, and end portions of one of electrodes that are in contact with the oxide semiconductor is placed inside end portions of the oxide semiconductor.

An exemplary semiconductor module includes a substrate formed of a ceramic insulator, and at least one metallic layer formed on the substrate. The metallic layer includes a deepening for placing and fixing a contact element. The contact element is at least partially “L”-shaped and includes a first arm for fixing the contact element at the deepening, and a second arm for interconnecting the contact element with an external device. The deepening has a horizontal dimension which is about ≦0.5 mm bigger than the horizontal dimension of the contact element.

The present invention relates to a method of producing an electrocatalytic cathode for use in an electrochemical cell system comprising the steps of providing a carbon substrate and simultaneously depositing palladium and iridium on the carbon substrate by cyclic voltammetry or by controlled potential coulometry. The simultaneous deposition of the palladium and iridium is preferably carried out using a solution containing 1.0 mM palladium chloride, 2.0 mM sodium hexachloroiridate, 0.2M potassium chloride, and 0.1M hydrochloric acid.

Provided is a semiconductor device for high power application including a novel semiconductor material with high productivity. Alternatively, provided is a semiconductor device having a novel structure in which the novel semiconductor material is used. Provided is a vertical transistor including a channel formation region formed using an oxide semiconductor which has a wider band gap than a silicon semiconductor and is an intrinsic semiconductor or a substantially intrinsic semiconductor with impurities that serve as electron donors (donors) in the oxide semiconductor removed. The thickness of the oxide semiconductor is greater than or equal to 1 micrometer, preferably greater than 3 micrometer, more preferably greater than or equal to 10 micrometer.

An optical waveguide with at least a guiding lamina (10) of optical material bonded by direct interfacial bonding to a superstructure lamina (20) of optical material, in which regions of the guiding lamina have modified optical properties so as to define a light guiding path along the guiding lamina. In a particular example, a periodically poled LiNbO3 planar waveguide is buried in LiTaO3 by direct interfacial bonding and precision polishing techniques and used in an optical frequency doubling system.

It is an object to provide a semiconductor device for high power application which has good properties. A means for solving the above-described problem is to form a transistor described below. The transistor includes a source electrode layer; an oxide semiconductor layer in contact with the source electrode layer; a drain electrode layer in contact with the oxide semiconductor layer; a gate electrode layer part of which overlaps with the source electrode layer, the drain electrode layer, and the oxide semiconductor layer; and a gate insulating layer in contact with an entire surface of the gate electrode layer.

A lateral field effect transistor for high switching frequencies having a source region layer (4) and a drain region layer (5) laterally spaced and of highly doped first conductivity type, a first-conductivity-type channel layer (6) of lower doping concentration extending laterally and interconnecting the source region layer (4) and the drain region layer (5). The transistor has a gate electrode (7) arranged to control the properties of the channel layer (6), and a highly doped second-conductivity-type base layer (8) arranged under the channel layer (6) at least partially overlapping the gate electrode (7) and at a lateral distance to the drain region layer (5), the highly doped second-conductivity-type base layer (8) being shorted to the source region layer (4). The transistor also has at least one of the following: a) a spacer layer (10) having semiconductor material adjacent to the channel layer (6) and located between the channel layer (6) and gate electrode (7), at least in the vicinity of the gate electrode (7), and / or b) a spacer layer (9) having semiconductor material adjacent to the channel layer (6) and located between the channel layer (6) and the highly doped second-conductivity-type base layer (8).

A high power device module includes a substrate carrying multiple chips on the top side and having stepped through holes around the chips, copper plates and connectors connected to the chips, fastening members each having a shoulder respectively fitted into the through holes of the substrate, a head connected to one end of the shoulder fitted into the expanded bottom end of the associating stepped through hole, and a shank connected to the other end of the shoulder and protruding over the top side of the substrate, and packaging members directly molded from resin on the shanks of the fastening members and the chips and the copper plates and the connectors to seal the component parts to the substrate.

A power riding trowel for finishing concrete comprising rotors turned by gearboxes driven by gearbox driveshaft's linked to the moor output by CVT gear ratio control. The motor output shaft drives a first jackshaft driven at a higher speed than the motor RPM. A CVT pulley assembly comprising first and second CVT pulleys and a CVT belt entrained between them has a first CVT pulley driven by the first jackshaft. A second jackshaft splined to the second CVT pulley drives the gearbox driveshaft at a speed lower than said second jackshaft to operate the rotor means at a proper speed and torque.

A method and an assembly for radio-frequency (RF) power coupling in a rack includes at least one box shaped power combiner and / or divider, connectors for inputting and outputting RF-power, conductors arranged inside the at least one box shaped power combiner and / or divider, electrically connecting the connectors with at least one center conductor, and at least one outside conductor formed as a box shaped casing.

A lateral field effect transistor for high switching frequencies having a source region layer (4) and a drain region layer (5) laterally spaced and of highly doped first conductivity type, a first-conductivity-type channel layer (6) of lower doping concentration extending laterally and interconnecting the source region layer (4) and the drain region layer (5). The transistor has a gate electrode (7) arranged to control the properties of the channel layer (6), and a second-conductivity-type base layer (8) arranged under the channel layer (6) at least partially overlapping the gate electrode (7) and at a lateral distance to the drain region layer (5), the highly doped second-conductivity-type base layer (8) being shorted to the source region layer (4). The transistor also has at least one of the following: a) a spacer layer (10) having semiconductor material adjacent to the channel layer (6) and located between the channel layer (6) and gate electrode (7), at least in the vicinity of the gate electrode (7), and / or b) a spacer layer (9) having semiconductor material adjacent to the channel layer (6) and located between the channel layer (6) and the second-conductivity-type base layer (8).

A ganged circulator device for isolating a transmitter and increasing the power level, isolation performance, and input VSWR performance of an IBOC combiner module is provided. The ganged circulator device includes an input power divider, a ganged circulator module, and an output power combiner. The input power divider includes a first input port, a second input port, and a plurality of output ports. The ganged circulator module includes a plurality of circulators and a plurality of load resistors. The module also includes input ports corresponding to and electrically connected to the plurality of output ports on the input power divider. The output power combiner includes a first output port, a second output port, and plurality of input ports corresponding to and electrically connected to a plurality of output ports of the ganged circulator module. An input signal is applied at the first input port of the input power divider, and an output signal is transmitted from the second output port of the power combiner. A first load resistor is electrically connected to the second input port of the power divider, and a second load resistor is connected to the first output port of the power combiner.

This disclosure relates to a method of fabrication of a surface acoustic wave device comprising the step (a) of providing a piezoelectric structure, the step (b) of providing a dielectric structure, wherein the step (b) comprises a step (b1) of metalizing the dielectric structure, and the method further comprising the step (c) of bonding the metalized dielectric structure to the piezoelectric structure.

A modular, continuously variable ratio transmission adapted to be coupled between the drive motor of a dual rotor riding trowel and the lower drive train. First and second rigid, generally planar frame plates are secured in parallel relation by a plurality of spacers. The first fame plate has a clearance orifice for admitting a portion of the trowel engine. A stub shaft receives input power and rotates a first pulley that drives a second pulley with a reduced diameter. A first jackshaft driven by said second pulley drives a variable CVT drive pulley affixed externally of the module. A second variable drive pulley coupled to said first variable drive pulley by a belt drives a second jackshaft splined to a fifth pulley that is coupled to a sixth pulley having a diameter greater than the diameter of said fifth pulley. The sixth pulley is coupled to trowel gearbox drive shafts.