30results about How to "High power application" patented technology

The invention is related to a cathode material comprising particles having a lithium metal phosphate core and a pyrolytic carbon deposit, said particles having a synthetic multimodal particle size distribution comprising at least one fraction of micron size particles and one fraction of submicron size particles, said lithium metal phosphate having formula LiMPO₄ wherein M is at least Fe or Mn.

Said material is prepared by method comprising the steps of providing starting micron sized particles and starting submicron sized particles of at least one lithium metal phosphate or of precursors of a lithium metal phosphate; mixing by mechanical means said starting particles; making a pyrolytic carbon deposit on the lithium metal phosphate starting particles before or after the mixing step, and on their metal precursor before or after mixing the particles; optionally adding carbon black, graphite powder or fibers to the said lithium metal phosphate particles before the mechanical mixing.

Objects are to provide a semiconductor device for high power application in which a novel semiconductor material having high productivity is used and to provide a semiconductor device having a novel structure in which a novel semiconductor material is used. The present invention is a vertical transistor and a vertical diode each of which has a stacked body of an oxide semiconductor in which a first oxide semiconductor film having crystallinity and a second oxide semiconductor film having crystallinity are stacked. An impurity serving as an electron donor (donor) which is contained in the stacked body of an oxide semiconductor is removed in a step of crystal growth; therefore, the stacked body of an oxide semiconductor is highly purified and is an intrinsic semiconductor or a substantially intrinsic semiconductor whose carrier density is low. The stacked body of an oxide semiconductor has a wider band gap than a silicon semiconductor.

Provided is a semiconductor device for high power application including a novel semiconductor material with high productivity. Alternatively, provided is a semiconductor device having a novel structure in which the novel semiconductor material is used. Provided is a vertical transistor including a channel formation region formed using an oxide semiconductor which has a wider band gap than a silicon semiconductor and is an intrinsic semiconductor or a substantially intrinsic semiconductor with impurities that serve as electron donors (donors) in the oxide semiconductor removed. The thickness of the oxide semiconductor is greater than or equal to 1 micrometer, preferably greater than 3 micrometer, more preferably greater than or equal to 10 micrometer.

Provided is a semiconductor device for high power application including a novel semiconductor material with high productivity. Alternatively, provided is a semiconductor device having a novel structure in which the novel semiconductor material is used. Provided is a vertical transistor including a channel formation region formed using an oxide semiconductor which has a wider band gap than a silicon semiconductor and is an intrinsic semiconductor or a substantially intrinsic semiconductor with impurities that can serve as electron donors (donors) in the oxide semiconductor removed. The thickness of the oxide semiconductor is greater than or equal to 1 μm, preferably greater than 3 μm, more preferably greater than or equal to 10 μm, and end portions of one of electrodes that are in contact with the oxide semiconductor is placed inside end portions of the oxide semiconductor.

A solid state Raman laser includes a laser pump for producing a first radiation at a high power and at a first wavelength along an optical path, a solid Raman active medium in the optical path of the first radiation, the medium including single crystal diamond having a first surface and a second surface, where the first radiation at a high power produces stimulated Raman scattering in the medium and the medium generates a second radiation at a second wavelength, a first optical element in the optical path of the first radiation, wherein the first optical element allows the first wavelength to be transmitted and allows the second wavelength to be reflected, and a second optical element in the optical path of the first radiation, wherein the second optical element allows the first wavelength to be transmitted and allows the second wavelength to be reflected.

The present invention provides a system and method of removing heat from an MR imaging device while maintaining internal and external temperatures below maximum operating limits, thereby enabling higher power applications for faster imaging with improved image quality as well as, allowing longer scan times for interventional procedures. The system includes a vacuum chamber housing the gradient coils and a vacuum pump connected thereto to regulate the pressure and humidity within the chamber. A heat exchanger, coolant pump, and controller are provided to regulate the temperature of coolant designed to dissipate heat from the gradient coils in response to at least one temperature sensor.

The present invention relates to a method of producing an electrocatalytic cathode for use in an electrochemical cell system comprising the steps of providing a carbon substrate and simultaneously depositing palladium and iridium on the carbon substrate by cyclic voltammetry or by controlled potential coulometry. The simultaneous deposition of the palladium and iridium is preferably carried out using a solution containing 1.0 mM palladium chloride, 2.0 mM sodium hexachloroiridate, 0.2M potassium chloride, and 0.1M hydrochloric acid.

An optical waveguide with at least a guiding lamina (10) of optical material bonded by direct interfacial bonding to a superstructure lamina (20) of optical material, in which regions of the guiding lamina have modified optical properties so as to define a light guiding path along the guiding lamina. In a particular example, a periodically poled LiNbO3 planar waveguide is buried in LiTaO3 by direct interfacial bonding and precision polishing techniques and used in an optical frequency doubling system.

A lateral field effect transistor for high switching frequencies having a source region layer (4) and a drain region layer (5) laterally spaced and of highly doped first conductivity type, a first-conductivity-type channel layer (6) of lower doping concentration extending laterally and interconnecting the source region layer (4) and the drain region layer (5). The transistor has a gate electrode (7) arranged to control the properties of the channel layer (6), and a highly doped second-conductivity-type base layer (8) arranged under the channel layer (6) at least partially overlapping the gate electrode (7) and at a lateral distance to the drain region layer (5), the highly doped second-conductivity-type base layer (8) being shorted to the source region layer (4). The transistor also has at least one of the following: a) a spacer layer (10) having semiconductor material adjacent to the channel layer (6) and located between the channel layer (6) and gate electrode (7), at least in the vicinity of the gate electrode (7), and/or b) a spacer layer (9) having semiconductor material adjacent to the channel layer (6) and located between the channel layer (6) and the highly doped second-conductivity-type base layer (8).

A high power device module includes a substrate carrying multiple chips on the top side and having stepped through holes around the chips, copper plates and connectors connected to the chips, fastening members each having a shoulder respectively fitted into the through holes of the substrate, a head connected to one end of the shoulder fitted into the expanded bottom end of the associating stepped through hole, and a shank connected to the other end of the shoulder and protruding over the top side of the substrate, and packaging members directly molded from resin on the shanks of the fastening members and the chips and the copper plates and the connectors to seal the component parts to the substrate.

A method and an assembly for radio-frequency (RF) power coupling in a rack includes at least one box shaped power combiner and/or divider, connectors for inputting and outputting RF-power, conductors arranged inside the at least one box shaped power combiner and/or divider, electrically connecting the connectors with at least one center conductor, and at least one outside conductor formed as a box shaped casing.

A modular, continuously variable ratio transmission adapted to be coupled between the drive motor of a dual rotor riding trowel and the lower drive train. First and second rigid, generally planar frame plates are secured in parallel relation by a plurality of spacers. The first fame plate has a clearance orifice for admitting a portion of the trowel engine. A stub shaft receives input power and rotates a first pulley that drives a second pulley with a reduced diameter. A first jackshaft driven by said second pulley drives a variable CVT drive pulley affixed externally of the module. A second variable drive pulley coupled to said first variable drive pulley by a belt drives a second jackshaft splined to a fifth pulley that is coupled to a sixth pulley having a diameter greater than the diameter of said fifth pulley. The sixth pulley is coupled to trowel gearbox drive shafts.