74results about How to "Large band gap" patented technology

A nitride semiconductor device includes: a substrate; a first nitride semiconductor layer formed over the substrate; a second nitride semiconductor layer formed on the first nitride semiconductor layer and having a larger band gap energy than the first nitride semiconductor layer; a third nitride semiconductor layer formed on the second nitride semiconductor layer and including a p-type nitride semiconductor with at least a single-layer structure; a gate electrode formed on the third nitride semiconductor layer; and a source electrode and a drain electrode formed in regions located on both sides of the gate electrode, respectively. The third nitride semiconductor layer has a thickness greater in a portion below the gate electrode than in a portion below the side of the gate electrode.

A semiconductor device includes a GaN-based semiconductor layer that is formed on a substrate and an opening region, an electron conduction layer formed on an inner surface of the opening region, an electron supply layer that has a larger band gap than the electron conduction layer and is formed on the electron conduction layer disposed on the inner surface of the opening region, and a gate electrode formed on a side surface of the electron supply layer in the opening region. A source electrode is formed on the GaN-based semiconductor layer. A drain electrode is connected to a surface of the GaN-based semiconductor layer opposite to the source electrode.

Provided are a charge trap memory device including a substrate and a gate structure including a charge trapping layer formed of a composite of nanoparticles, and a method of manufacturing the charge trap memory device.

Provided is a semiconductor device for high power application including a novel semiconductor material with high productivity. Alternatively, provided is a semiconductor device having a novel structure in which the novel semiconductor material is used. Provided is a vertical transistor including a channel formation region formed using an oxide semiconductor which has a wider band gap than a silicon semiconductor and is an intrinsic semiconductor or a substantially intrinsic semiconductor with impurities that can serve as electron donors (donors) in the oxide semiconductor removed. The thickness of the oxide semiconductor is greater than or equal to 1 μm, preferably greater than 3 μm, more preferably greater than or equal to 10 μm, and end portions of one of electrodes that are in contact with the oxide semiconductor is placed inside end portions of the oxide semiconductor.

A nitride semiconductor light emitting device has high internal quantum efficiency but low operating voltage. The nitride semiconductor light emitting device includes an n-nitride semiconductor layer; an active layer of multi-quantum well structure formed on the n-nitride semiconductor layer, and having a plurality of quantum well layers and a plurality of quantum barrier layers; and a p-nitride semiconductor layer formed on the active layer. One of the quantum well layers adjacent to the n-nitride semiconductor layer has an energy band gap greater than that of another one of the quantum well layers adjacent to the p-nitride semiconductor layer.

Provided is a semiconductor device for high power application including a novel semiconductor material with high productivity. Alternatively, provided is a semiconductor device having a novel structure in which the novel semiconductor material is used. Provided is a vertical transistor including a channel formation region formed using an oxide semiconductor which has a wider band gap than a silicon semiconductor and is an intrinsic semiconductor or a substantially intrinsic semiconductor with impurities that serve as electron donors (donors) in the oxide semiconductor removed. The thickness of the oxide semiconductor is greater than or equal to 1 micrometer, preferably greater than 3 micrometer, more preferably greater than or equal to 10 micrometer.

Crystalline aluminum oxide layers having increased energy band gap, charge trap memory devices including crystalline aluminum oxide layers and methods of manufacturing the same are provided. A method of forming an aluminum oxide layer having an increased energy band gap includes forming an amorphous aluminum oxide layer on a lower film, introducing hydrogen (H) or hydroxyl group (OH) into the amorphous aluminum oxide layer, and crystallizing the amorphous aluminum oxide layer including the H or OH.

A capacitor that has an electrode of an n-type semiconductor that is provided in contact with one surface of a dielectric, has a work function of 5.0 eV or higher, preferably 5.5 eV or higher, and includes nitrogen and at least one of indium, tin, and zinc. Since the electrode has a high work function, the dielectric can have a high potential barrier, and thus even when the dielectric is as thin as 10 nm or less, a sufficient insulating property can be maintained. In particular, a striking effect can be obtained when the dielectric is formed of a high-k material.