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74results about How to "Large band gap" patented technology

Semiconductor device and method for manufacturing the same

Objects are to provide a semiconductor device for high power application in which a novel semiconductor material having high productivity is used and to provide a semiconductor device having a novel structure in which a novel semiconductor material is used. The present invention is a vertical transistor and a vertical diode each of which has a stacked body of an oxide semiconductor in which a first oxide semiconductor film having crystallinity and a second oxide semiconductor film having crystallinity are stacked. An impurity serving as an electron donor (donor) which is contained in the stacked body of an oxide semiconductor is removed in a step of crystal growth; therefore, the stacked body of an oxide semiconductor is highly purified and is an intrinsic semiconductor or a substantially intrinsic semiconductor whose carrier density is low. The stacked body of an oxide semiconductor has a wider band gap than a silicon semiconductor.
Owner:SEMICON ENERGY LAB CO LTD

Nitride semiconductor light emitting element and method for manufacturing nitride semiconductor

Provided are a nitride semiconductor light emitting element having a nitride semiconductor layered on an AlN buffer layer with improved qualities such as crystal quality and with improved light emission output, and a method of manufacturing a nitride semiconductor. An AlN buffer layer (2) is formed on a sapphire substrate (1), and nitride semiconductors of an n-type AlGaN layer (3), an InGaN / GaN active layer (4) and a p-type GaN layer (5) are layered in sequence on the buffer layer (2). An n-electrode (7) is formed on a surface of the n-type AlGaN layer (3), and a p-electrode (6) is formed on the p-type GaN layer (5). The n-type AlGaN layer (3) serves as a cladding layer for confining light and carriers. The AlN buffer layer (2) is manufactured by alternately supplying an Al material and an N material at a growing temperature of 900° C. or higher.
Owner:ROHM CO LTD

Method of fabricating a stacked oxide material for thin film transistor

Objects are to provide a semiconductor device for high power application in which a novel semiconductor material having high productivity is used and to provide a semiconductor device having a novel structure in which a novel semiconductor material is used. The present invention is a vertical transistor and a vertical diode each of which has a stacked body of an oxide semiconductor in which a first oxide semiconductor film having crystallinity and a second oxide semiconductor film having crystallinity are stacked. An impurity serving as an electron donor (donor) which is contained in the stacked body of an oxide semiconductor is removed in a step of crystal growth; therefore, the stacked body of an oxide semiconductor is highly purified and is an intrinsic semiconductor or a substantially intrinsic semiconductor whose carrier density is low. The stacked body of an oxide semiconductor has a wider band gap than a silicon semiconductor.
Owner:SEMICON ENERGY LAB CO LTD

Nitride semiconductor device and method for fabricating the same

A nitride semiconductor device includes: a substrate; a first nitride semiconductor layer formed over the substrate; a second nitride semiconductor layer formed on the first nitride semiconductor layer and having a larger band gap energy than the first nitride semiconductor layer; a third nitride semiconductor layer formed on the second nitride semiconductor layer and including a p-type nitride semiconductor with at least a single-layer structure; a gate electrode formed on the third nitride semiconductor layer; and a source electrode and a drain electrode formed in regions located on both sides of the gate electrode, respectively. The third nitride semiconductor layer has a thickness greater in a portion below the gate electrode than in a portion below the side of the gate electrode.
Owner:PANASONIC CORP

Semiconductor device and manufacturing method thereof

A semiconductor device includes a GaN-based semiconductor layer that is formed on a substrate and an opening region, an electron conduction layer formed on an inner surface of the opening region, an electron supply layer that has a larger band gap than the electron conduction layer and is formed on the electron conduction layer disposed on the inner surface of the opening region, and a gate electrode formed on a side surface of the electron supply layer in the opening region. A source electrode is formed on the GaN-based semiconductor layer. A drain electrode is connected to a surface of the GaN-based semiconductor layer opposite to the source electrode.
Owner:SUMITOMO ELECTRIC DEVICE INNOVATIONS

Semiconductor device

Provided is a semiconductor device for high power application including a novel semiconductor material with high productivity. Alternatively, provided is a semiconductor device having a novel structure in which the novel semiconductor material is used. Provided is a vertical transistor including a channel formation region formed using an oxide semiconductor which has a wider band gap than a silicon semiconductor and is an intrinsic semiconductor or a substantially intrinsic semiconductor with impurities that can serve as electron donors (donors) in the oxide semiconductor removed. The thickness of the oxide semiconductor is greater than or equal to 1 μm, preferably greater than 3 μm, more preferably greater than or equal to 10 μm, and end portions of one of electrodes that are in contact with the oxide semiconductor is placed inside end portions of the oxide semiconductor.
Owner:SEMICON ENERGY LAB CO LTD

Method for synthesizing anthracene derivative and anthracene derivative, light emitting element, light emitting device, electronic device

It is an object to provide a novel method for synthesizing an anthracene derivative with the small number of steps. It is another object to provide a novel anthracene derivative. It is further another object to provide a light-emitting element, a light-emitting device, and an electronic device, each using the anthracene derivative. A method for synthesizing an anthracene derivative represented by a general formula (1) is provided by coupling a 9-arylanthracene derivative having an active site at a 10-position with a 9-arylcarbazole derivative having an active site in an aryl group using metal, a metal compound, or a metal catalyst.
Owner:SEMICON ENERGY LAB CO LTD

Nitride semiconductor device and method for fabricating the same

A nitride semiconductor device includes: a substrate; a first nitride semiconductor layer formed over the substrate; a second nitride semiconductor layer formed on the first nitride semiconductor layer and having a larger band gap energy than the first nitride semiconductor layer; a third nitride semiconductor layer formed on the second nitride semiconductor layer and including a p-type nitride semiconductor with at least a single-layer structure; a gate electrode formed on the third nitride semiconductor layer; and a source electrode and a drain electrode formed in regions located on both sides of the gate electrode, respectively. The third nitride semiconductor layer has a thickness greater in a portion below the gate electrode than in a portion below the side of the gate electrode.
Owner:PANASONIC CORP

Semiconductor device and method of manufacturing the same

In a high electron mobility transistor, with a normally-off operation maintained, on-resistance can be sufficiently reduced, so that the performance of a semiconductor device including the high electron mobility transistor is improved. Between a channel layer and an electron supply layer, a spacer layer whose band gap is larger than the band gap of the electron supply layer is provided. Thereby, due to the fact that the band gap of the spacer layer is large, a high potential barrier (electron barrier) is formed in the vicinity of an interface between the channel and the electron supply layer.
Owner:RENESAS ELECTRONICS CORP

Semiconductor device and manufacturing method thereof

A semiconductor device includes a GaN-based semiconductor layer that is formed on a substrate and an opening region, an electron conduction layer formed on an inner surface of the opening region, an electron supply layer that has a larger band gap than the electron conduction layer and is formed on the electron conduction layer disposed on the inner surface of the opening region, and a gate electrode formed on a side surface of the electron supply layer in the opening region. A source electrode is formed on the GaN-based semiconductor layer. A drain electrode is connected to a surface of the GaN-based semiconductor layer opposite to the source electrode.
Owner:SUMITOMO ELECTRIC DEVICE INNOVATIONS

Nitride semiconductor light emitting device

A nitride semiconductor light emitting device has high internal quantum efficiency but low operating voltage. The nitride semiconductor light emitting device includes an n-nitride semiconductor layer; an active layer of multi-quantum well structure formed on the n-nitride semiconductor layer, and having a plurality of quantum well layers and a plurality of quantum barrier layers; and a p-nitride semiconductor layer formed on the active layer. One of the quantum well layers adjacent to the n-nitride semiconductor layer has an energy band gap greater than that of another one of the quantum well layers adjacent to the p-nitride semiconductor layer.
Owner:SAMSUNG ELECTRONICS CO LTD

Solid-state image pickup unit and electronic apparatus

A solid-state image pickup unit includes: a substrate made of a first semiconductor; a substrate made of a first semiconductor; a photoelectric conversion device provided on the substrate and including a first electrode, a photoelectric conversion layer, and a second electrode in order from the substrate; and a plurality of field-effect transistors configured to perform signal reading from the photoelectric conversion device. The plurality of transistors include a transfer transistor and an amplification transistor, the transfer transistor includes an active layer containing a second semiconductor with a larger band gap than that of the first semiconductor, and one terminal of a source and a drain of the transfer transistor also serves the first electrode or the second electrode of the photoelectric conversion device, and the other terminal of the transfer transistor is connected to a gate of the amplification transistor.
Owner:SONY SEMICON SOLUTIONS CORP

P-Type Semiconductor Material and Semiconductor Device

InactiveUS20130214271A1Reduce light absorption lossFavorable carrier extractionPhotovoltaic energy generationSemiconductor devicesSemiconductor materialsIntermediate composition
An oxide semiconductor material having p-type conductivity and a semiconductor device using the oxide semiconductor material are provided. The oxide semiconductor material having p-type conductivity can be provided using a molybdenum oxide material containing molybdenum oxide (MoOy (2<y<3)) having an intermediate composition between molybdenum dioxide and molybdenum trioxide. For example, a semiconductor device is formed using a molybdenum oxide material containing molybdenum trioxide (MoO3) as its main component and MoOy (2<y<3) at 4% or more.
Owner:SEMICON ENERGY LAB CO LTD

Nitride semiconductor light emitting device including electrodes of a multilayer structure

A nitride semiconductor LED comprises a substrate; an n-type nitride semiconductor layer formed on the substrate; an active layer formed on a predetermined region of the n-type nitride semiconductor layer; a p-type nitride semiconductor layer formed on the active layer; a p-electrode formed on the p-type nitride semiconductor layer; and an n-electrode formed on the n-type nitride semiconductor layer in which the active layer is not formed. The p-electrode and n-electrode are formed to have such a multilayer structure that an ohmic contact layer, a compound layer containing aluminum or silver, and a degradation preventing layer are sequentially laminated.
Owner:SAMSUNG ELECTRONICS CO LTD

Group iii nitride-based compound semiconductor light-emitting device and production method therefor

ActiveUS20110168974A1High Al composition ratioReduce structureSemiconductor/solid-state device manufacturingSemiconductor devicesMultiple quantumBand gap
The object of the present invention is to improve extraction efficiency of light of a Group III nitride-based compound semiconductor light-emitting device of a multiple quantum well structure. The device comprises a multiple quantum well structure comprising a well layer comprising a semiconductor including at least In for composition, a protective layer which comprises a semiconductor including at least Al and Ga for composition and has a band gap larger than a band gap of the well layer and is formed on and in contact with the well layer in a positive electrode side. And also the device comprises a barrier layer comprising a band gap which is larger than a band gap of the well layer and is smaller than a band gap of the protective layer, and formed on and in contact with the protective layer in a positive electrode side and a periodical structure of the well layer, the protective layer and the barrier layer.
Owner:TOYODA GOSEI CO LTD

Photovoltaic device

An aspect of the present invention provides a photovoltaic device having a first semiconductor layer of a first conduction type and a third semiconductor layer of a second conductivity type. At least one of the first and third semiconductor layers includes an amorphous semiconductor layer. The amorphous semiconductor layer has a larger band gap than a non-monocrystal semiconductor layer having crystallinity. Accordingly, it is possible to increase a built-in electric field that is a potential difference between the Fermi level of the first semiconductor layer of the first conductivity type and the Fermi level of the third semiconductor layer of the second conductivity type.
Owner:SANYO ELECTRIC CO LTD

Capacitor-Less Memory

It is an object of the present invention to provide a capacitor-less memory which can prevent a change of a threshold voltage due to flowing out of carriers and improve the memory retention property without a complicated structure. In the capacitor-less memory which uses a transistor, the transistor includes a source region, a drain region, an active layer region which is provided between the source region and the drain region, and a gate electrode which is adjacent to the active layer region with an insulating film interposed therebetween. The source region is formed of a semiconductor having a larger band gap than a band gap of a semiconductor of the active layer region and a band gap of a semiconductor of the drain region, and a heterojunction is formed at the interface between the source region and the active layer region.
Owner:SEMICON ENERGY LAB CO LTD

Photoelectric conversion device and electronic apparatus

A photoelectric conversion device includes circuit portions disposed on a substrate, a first electrode electrically connected to one of the circuit portions, an optically transparent second electrode opposing the first electrode, and a photoelectric conversion portion disposed between the first electrode and the second electrode. The photoelectric conversion portion has a multilayer structure including a light absorption layer made of a p-type compound semiconductor film having a chalcopyrite structure, an amorphous oxide semiconductor layer, and a window layer made of an n-type semiconductor film.
Owner:SEIKO EPSON CORP

Semiconductor device with oxide semiconductor

Provided is a semiconductor device for high power application including a novel semiconductor material with high productivity. Alternatively, provided is a semiconductor device having a novel structure in which the novel semiconductor material is used. Provided is a vertical transistor including a channel formation region formed using an oxide semiconductor which has a wider band gap than a silicon semiconductor and is an intrinsic semiconductor or a substantially intrinsic semiconductor with impurities that can serve as electron donors (donors) in the oxide semiconductor removed. The thickness of the oxide semiconductor is greater than or equal to 1 μm, preferably greater than 3 μm, more preferably greater than or equal to 10 μm, and end portions of one of electrodes that are in contact with the oxide semiconductor is placed inside end portions of the oxide semiconductor.
Owner:SEMICON ENERGY LAB CO LTD

Nitride semiconductor light emitting device

A nitride semiconductor light emitting device has high internal quantum efficiency but low operating voltage. The nitride semiconductor light emitting device includes an n-nitride semiconductor layer; an active layer of multi-quantum well structure formed on the n-nitride semiconductor layer, and having a plurality of quantum well layers and a plurality of quantum barrier layers; and a p-nitride semiconductor layer formed on the active layer. One of the quantum well layers adjacent to the n-nitride semiconductor layer has an energy band gap greater than that of another one of the quantum well layers adjacent to the p-nitride semiconductor layer.
Owner:SAMSUNG ELECTRONICS CO LTD

Two-wavelength semiconductor laser device and its fabricating method

A two-wavelength semiconductor laser device includes a first semiconductor laser device including a first-conductivity type first cladding layer, a first guide layer made of AlGaAs mixed crystal, a first quantum well active layer having a barrier layer made of AlGaAs mixed crystal, a second guide layer made of AlGaAs mixed crystal, and a second-conductivity type second cladding layer, and a second semiconductor laser device including a first-conductivity type third cladding layer, a third guide layer made of AlGaInP mixed crystal, a second quantum well active layer having a barrier layer made of AlGaInP mixed crystal, a fourth guide layer made of AlGaInP mixed crystal, and a second-conductivity type fourth cladding layer. At least the barrier layer included in the first quantum well active layer, the first guide layer, and the second guide layer each have an Al molar ratio of more than 0.47 and 0.60 or less.
Owner:PANASONIC SEMICON SOLUTIONS CO LTD

Transistor having oxide semiconductor with electrode facing its side surface

Provided is a semiconductor device for high power application including a novel semiconductor material with high productivity. Alternatively, provided is a semiconductor device having a novel structure in which the novel semiconductor material is used. Provided is a vertical transistor including a channel formation region formed using an oxide semiconductor which has a wider band gap than a silicon semiconductor and is an intrinsic semiconductor or a substantially intrinsic semiconductor with impurities that serve as electron donors (donors) in the oxide semiconductor removed. The thickness of the oxide semiconductor is greater than or equal to 1 micrometer, preferably greater than 3 micrometer, more preferably greater than or equal to 10 micrometer.
Owner:SEMICON ENERGY LAB CO LTD

Crystalline aluminum oxide layers having increased energy band gap, charge trap layer devices including crystalline aluminum oxide layers, and methods of manufacturing the same

Crystalline aluminum oxide layers having increased energy band gap, charge trap memory devices including crystalline aluminum oxide layers and methods of manufacturing the same are provided. A method of forming an aluminum oxide layer having an increased energy band gap includes forming an amorphous aluminum oxide layer on a lower film, introducing hydrogen (H) or hydroxyl group (OH) into the amorphous aluminum oxide layer, and crystallizing the amorphous aluminum oxide layer including the H or OH.
Owner:SAMSUNG ELECTRONICS CO LTD

Amorphous silicon doped with fluorine for selectors of resistive random access memory cells

Provided are resistive switching memory cells having selectors and methods of fabricating such cells. A selector may be disposed between an electrode and resistive switching layer. The selector is configured to undergo an electrical breakdown when a voltage applied to the selector exceeds a selected threshold. The selector is formed from amorphous silicon doped with fluorine. The concentration of fluorine may be between about 0.01% atomic and 3% atomic, such as about 1% atomic. Amorphous silicon has a larger band gap than, for example, crystalline silicon and, therefore, has a lower leakage. Dangling bond and weak bond states appearing in the mid-gap position of amorphous silicon are eliminated by adding fluorine. Fluorine binds to and passivates defects. In some embodiments, a fluorine reservoir is positioned in a low current density region of the memory cell to counter diffusion of fluorine from the selector into other components.
Owner:INTERMOLECULAR

Triazole Derivative, and Light-Emitting Element, Light-Emitting Device, Lighting Device, and Electronic Device Using Triazole Derivative

An object is to provide a novel triazole derivative having a bipolar property. Another object is to provide a light-emitting element, a light-emitting device, and an electronic device each having high emission efficiency. A triazole derivative represented by a general formula (G1), a light-emitting element, a light-emitting device, and an electronic device each formed using the triazole derivative represented by the general formula (G1) are provided. By use of the triazole derivative represented by the general formula (G1) for the light-emitting element, the light-emitting device, and the electronic device, the light-emitting element, the light-emitting device, and the electronic device each having high emission efficiency can be provided.
Owner:SEMICON ENERGY LAB CO LTD

E-field-modulated bistable molecular mechanical device

A molecular system is provided for nanometer-scale reversible electronic and optical switches, specifically, electric field-activated molecular switches that have an electric field induced band gap change that occurs via rotation of rotor units connected to immobile stator units. The molecular system has two branches on one side of an immobile junction unit and one or two branches on the opposite side to thereby provide "Y" and "X" configurations, respectively. The ends of the branches opposite the junction unit are connected to, or electrically associated with, other molecular systems or substrates, such as electrodes. The rotor units each rotate between two states as a function of an externally-applied field. Both multi-stable molecular mechanical devices and electric field-activated optical switches are provided.
Owner:HEWLETT PACKARD DEV CO LP

Capacitor and semiconductor device including dielectric and N-type semiconductor

A capacitor that has an electrode of an n-type semiconductor that is provided in contact with one surface of a dielectric, has a work function of 5.0 eV or higher, preferably 5.5 eV or higher, and includes nitrogen and at least one of indium, tin, and zinc. Since the electrode has a high work function, the dielectric can have a high potential barrier, and thus even when the dielectric is as thin as 10 nm or less, a sufficient insulating property can be maintained. In particular, a striking effect can be obtained when the dielectric is formed of a high-k material.
Owner:SEMICON ENERGY LAB CO LTD
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