18 results about "Mixed crystal" patented technology

This invention relates to a processing method for improving the chloride ion corrosion resistance of GH3625 bars, belonging to the field of bar production technology in the metallurgical industry. The technical solution is as follows: the bars are placed in a heating furnace and heated to 1195~1215℃ for a holding time T1=257.39*exp(D1 / 62.52)-26.45; then cooled after removal from the furnace at a rate greater than 100℃ / s; the GH3625 bars are then drawn with a deformation of 50%; the drawn GH3625 bars are then placed in a heating furnace and heated to 825~835℃ for a holding time T2=44.78*exp(D2 / 45.57)+70.47; finally cooled after removal from the furnace at a rate less than 5℃ / min. The beneficial effects of this invention are: it can improve the corrosion resistance of the material, eliminate deteriorating phases while ensuring the necessary mechanical properties of the material, and simultaneously solve the problem of mixed crystals.

This invention discloses a method for producing MnSO4-FeSO4 mixed crystals with a controllable manganese-iron atomic ratio using reduced mineral powder. This method allows new energy material companies to control raw materials and ensure product quality stability. The technology for producing MnSO4-FeSO4 mixed crystals with a controllable manganese-iron atomic ratio is of great significance for the production of lithium manganese iron phosphate products.

The application provides a method for separating cis and trans 2,2,4,4-tetramethyl-1,3-cyclobutanediol, comprising the following steps: cooling a mixed solution containing a solvent, cis and trans 2,2,4,4-tetramethyl-1,3-cyclobutanediol to a first temperature at a first cooling rate, then cooling to a second temperature at a second cooling rate, and performing solid-liquid separation to obtain mixed crystals; performing screening treatment on the mixed crystals to obtain cis and trans 2,2,4,4-tetramethyl-1,3-cyclobutanediol crystals; wherein the first cooling rate is less than or equal to 10 DEG C / h, and the second cooling rate is greater than or equal to 30 DEG C / h; the first temperature is higher than the second temperature, the temperature of the mixed solution is greater than the first temperature, the first temperature is less than or equal to 70 DEG C, and the second temperature is less than or equal to 30 DEG C. The method can efficiently and simply separate cis and trans 2,2,4,4-tetramethyl-1,3-cyclobutanediol crystals.

To provide semiconductor devices, electronic devices, and systems with excellent electrical properties useful for power devices and the like. [Solution] A semiconductor device comprising a laminated structure in which a second semiconductor layer having the same crystal structure as the first semiconductor layer is laminated directly or via another layer on a first semiconductor layer made of a crystalline oxide mainly composed of germanium or a mixed crystal thereof, further comprising a Schottky electrode that is Schottky bonded to the second semiconductor layer and an ohmic electrode that is ohmic bonded to the first semiconductor layer, is applied, for example, to a power device.

The application provides an EMT / TS-1 mixed crystal molecular sieve, a preparation method thereof and application thereof in polyethylene waste hydrogenation cracking, and belongs to the technical field of catalysts. The preparation method of the EMT / TS-1 mixed crystal molecular sieve is as follows: an aluminum source is added into a first alkali hydroxide solution, and a phosphate, a first template agent and a first silicon source are subjected to aging treatment and first crystallization treatment to obtain an EMT microcrystal emulsion; a titanium source and a second template agent are uniformly stirred, and then water and an alcohol solvent are added to obtain a first solution; a second alkali hydroxide, water and an organic ligand are uniformly mixed, and a hydrolysis reaction occurs; after the reaction is completed, a platinum source is added to obtain a second solution; the above solutions are uniformly stirred, and then a second silicon source is added to perform second crystallization treatment and calcination treatment to obtain the EMT / TS-1 mixed crystal molecular sieve. The EMT / TS-1 mixed crystal molecular sieve catalyst can completely convert a certain proportion of low-density polyethylene in a short time.

The invention relates to quartz mixed crystal glass-ceramics, and to precursors thereof, which are characterized by excellent mechanical and optical properties, and which can be used in particular as dental restorative materials.

The application relates to a method and system for purifying durene, and belongs to the technical field of durene purification. The method comprises the following steps: performing primary suspension crystallization on durene-rich liquid at a set cooling speed to obtain primary suspension crystallization slurry with a first temperature; performing solid-liquid separation on the primary suspension crystallization slurry to obtain primary suspension crystallization mother liquor and primary suspension crystallization crystals; performing secondary suspension crystallization on the primary suspension crystallization mother liquor at a set cooling speed to obtain secondary suspension crystallization slurry with a second temperature; performing solid-liquid separation on the secondary suspension crystallization slurry to obtain secondary suspension crystallization crystals; and performing layer-type melt crystallization on the mixed crystals of the primary suspension crystallization crystals and the secondary suspension crystallization crystals to obtain durene crystallization products. Under the synergistic action of the two-stage suspension crystallization and the layer-type melt crystallization, the application can realize high yield and high purity of durene, and the method does not have a gasification and condensation process, and has low energy consumption.

On the basis of a self-supporting substrate for epitaxial crystal growth containing a Group 13 element nitride crystal selected from gallium nitride, aluminum nitride, indium nitride, or a mixed crystal thereof, cracking of the self-supporting substrate or the epitaxial crystal in a process of growing the epitaxial crystal is prevented. A self-supporting substrate for epitaxial crystal growth (21) containing a Group 13 element nitride crystal selected from gallium nitride, aluminum nitride, indium nitride, or a mixed crystal thereof has a nitrogen-polarity face (21a) and a Group 13 element-polarity face (21b). The nitrogen-polarity face (21a) is convexly curved, and a chamfered portion (21c) is provided at an outer peripheral portion (22) of the nitrogen-polarity face (21a).

This invention discloses a high-strength, high-plasticity Cu-Al2O3 / Cu composite rod, its preparation method, and its application, belonging to the field of materials technology. The rod has a mixed-crystal structure, wherein the fine Al2O3-dispersed Cu grains have a particle size ≤1.5μm, and the coarse pure Cu grains have a particle size ≥2μm; the content of fine grains in the rod is 40-90wt%, with the remainder being coarse grains. The aforementioned fine Al2O3-dispersed Cu grains provide the rod with high strength, while the coarse pure Cu grains provide high plasticity. Through this mixed-crystal ratio, the inverted relationship of "high strength-high plasticity" in the Cu-Al2O3 / Cu composite material can be effectively improved, enhancing the overall performance of the rod. The preparation of the rod includes: mixing the raw materials to form an ingot, followed by internal oxidation treatment, reduction treatment, and hot extrusion. This preparation process is simple to operate, has low production cost, and is highly feasible.

This invention discloses a hafnium-zirconium oxide multi-bit ferroelectric memory cell and its fabrication method. The memory cell includes a first electrode and a second electrode, with a multi-state ferroelectric layer disposed between them. The multi-state ferroelectric layer comprises a hafnium-zirconium oxide solid solution and doping elements. The device undergoes high-temperature annealing, which, under the combined action of the doping elements and electrode stress, causes a phase transformation in the multi-state ferroelectric layer, forming a mixed crystal of ferroelectric, antiferroelectric, and non-ferroelectric phases, thereby achieving multi-bit information storage. The multi-state ferroelectric layer possesses stable polymorphisms for storing multi-bit data and can rapidly switch between different storage states. The electrode layer provides the electric field driving force while simultaneously regulating the stress and oxygen vacancy spatial distribution at the electrode-ferroelectric interface layer. The distribution and concentration of the doping elements are controlled, and the combined action of the electrodes adjusts the phase composition of the material and the oxygen vacancy distribution within the ferroelectric layer.

The application belongs to the technical field of liquid crystal material and data driving material design, and discloses a liquid crystal monomer performance prediction method and a mixed crystal performance prediction method based on GAT, which represents the liquid crystal monomer as a molecular graph, encodes the chemical bond connection relationship and chemical environment by using a graph attention network, and introduces the polarization rate, the dipole moment and the orbital energy level and other quantitative calculation physical information in the pre-training stage; a PIML molecular prediction model is established under a structure perception data division strategy, and accurate prediction of key properties such as birefringence, dielectric parameters and clearing point is realized. On the basis of constructing a mixed crystal prediction model based on KernelSVR prediction, forward mixed crystal performance prediction or reverse mixed crystal formula generation is realized, which significantly reduces the formula search cost and improves the research and development efficiency.

The application relates to a preparation method of a high-toughness mixed-crystal structure magnesium alloy, and belongs to the technical field of magnesium alloy material preparation. In view of the technical problem that the strength and plasticity of an existing magnesium alloy are difficult to be considered, the application provides a preparation method for inhibiting dynamic recrystallization by regulating a second phase. A magnesium alloy ingot containing dendritic or network eutectic second phases is quenched after being kept at 500 DEG C to 520 DEG C for 16 hours to 20 hours, so that the second phases are fully decomposed and dissolved in a magnesium matrix, and then hot extrusion deformation is carried out at 430 DEG C to 450 DEG C with an extrusion ratio of 10 to 14. The method significantly reduces particle stimulated nucleation points and pins grain boundaries through solid solution atoms, inhibits dynamic recrystallization, and forms an incomplete dynamic recrystallization mixed-crystal structure. The obtained extruded alloy has a yield strength of greater than or equal to 260 MPa, a tensile strength of greater than or equal to 330 MPa, and an elongation after fracture of greater than or equal to 20 %, and excellent synergy of high strength and good plasticity is achieved.

The invention provides a semiconductor device, an electronic apparatus, and a system, which are useful for power devices and the like and have excellent electrical characteristics. A semiconductor device is used, for example, to be applied to a power device or the like, and includes a laminated structure that includes a first semiconductor layer containing a crystalline oxide containing germanium or a mixed crystal thereof as a main component and a second semiconductor layer containing a crystalline oxide containing germanium or a mixed crystal thereof as a main component. A semiconductor device in which a second semiconductor layer having the same crystal structure as the first semiconductor layer is laminated directly or via another layer, the semiconductor device further comprising: a Schottky electrode that is Schottky-bonded to the second semiconductor layer; and an ohmic electrode ohmically bonded to the first semiconductor layer.

This invention belongs to the field of inorganic materials technology and discloses a method for preparing monodisperse submicron cubic strontium titanate powder. The method includes: mixing rutile and anatase titanium dioxide and then performing high-energy ball milling to obtain a homogeneous precursor; mixing the precursor with a strontium source, dispersant, and milling media and then performing wet ball milling to obtain a slurry; ultrasonically dispersing, drying, grinding, and sieving to obtain precursor powder; and finally calcining to obtain the target powder. This invention, through mixed-crystal titanium source design, multi-stage ball milling, and the synergistic effect of the dispersant, combined with optimized calcination process conditions, successfully prepares monodisperse submicron cubic strontium titanate powder with a purity ≥99.9%, an average grain size of 200–500 nm, and D90 / D50 ≤2.0, which can be used in high-frequency devices and copper-clad laminates.

To provide a semiconductor device, an electronic device, and a system that are useful in a power device or the like and have superior electrical characteristics. A semiconductor device including a laminated structure in which a second semiconductor layer having a same crystal structure as a first semiconductor layer constituted of a crystalline oxide containing germanium or a mixed crystal of germanium as a main component is laminated directly or via another layer on the first semiconductor layer, the semiconductor device further including a Schottky electrode forming a Schottky junction with the second semiconductor layer and an ohmic electrode forming an ohmic junction with the first semiconductor layer, the semiconductor device being used and applied to, for example, a power device.

The present disclosure relates to an alkylaromatics isomerization catalyst and its preparation method and application. The catalyst comprises an inert carrier, an acidic component, an active metal component and a modification component; the acidic component comprises a mixed crystal molecular sieve containing MEL structure, the active metal component is selected from one or more of the group VII metal elements, the inert carrier comprises alumina, and the modification component comprises P2O5; in the catalyst, the weight ratio of SiO2 / Al2O3 is 0.5-4, and the Na2O content is less than 0.25% by weight based on the total weight of the catalyst. The catalyst is applied to the hydrogen isomerization reaction of C8 and C9 aromatic hydrocarbons, and has high isomerization activity and high selectivity.

[Problem] To provide a semiconductor device, an electronic apparatus, and a system having excellent electric characteristics useful for a power device or the like. [Solution] This semiconductor device has a laminated structure that includes a first semiconductor layer composed of a crystalline oxide containing germanium or a mixed crystal thereof as a main component, and a second semiconductor layer laminated on the first semiconductor layer directly or via another layer, the second semiconductor layer having the same crystal structure as the first semiconductor layer. The second semiconductor layer is an n- layer having a carrier concentration of 1×1018cm-3 or less, and the first semiconductor layer is an n+ layer having a carrier concentration of 5×1018cm-3 or more. The semiconductor device is applied to, for example, a power device or the like.

Aspects of the invention are directed to fabrication methods and resulting structures for providing transistors having hybrid crystal orientation channels and mixed crystal orientation bottom epitaxies. In a non-limiting embodiment, a first fin having a first crystal orientation is formed in a first region of a substrate having a second crystal orientation. A second fin having the second crystal orientation is formed in a second region of the substrate. The second fin is formed directly on a surface of the substrate. A mixed crystal bottom source or drain region is formed between the first fin and the first region of the substrate and a single crystal bottom source or drain region having the second crystal orientation is formed on sidewalls of the second fin and on the surface of the substrate in the second region.