441 results about "Soi substrate" patented technology

An electro-optical device is fabricated on a semiconductor-on-insulator (SOI) substrate. The electro-optical device comprises a silicon dioxide layer, and an active layer having ferroelectric properties on the silicon dioxide layer. The silicon dioxide layer includes a first silicon dioxide layer of the SOI substrate and a second silicon dioxide layer converted from a silicon layer of the SOI substrate. The active layer includes a buffer layer epitaxially grown on the silicon layer of the SOI substrate and a ferroelectric layer epitaxially grown on the buffer layer. The electro-optical device further comprises one or more additional layers over the active layer, and first and second contacts to the active layer through at least one of the one or more additional layers. Methods of fabricating the electro-optical device are also described herein.

Various embodiments of the present disclosure are directed towards an integrated chip (IC). The IC includes a substrate. The substrate includes a metal layer, a device layer disposed over the metal layer, and an insulating layer disposed vertically between the metal layer and the device layer. A semiconductor device is disposed on the device layer. An interlayer dielectric (ILD) layer is disposed over the semiconductor device and the substrate.

Integrated circuits (ICs) that avoid or mitigate creation of changes in accumulated charge in a silicon-on-insulator (SOI) substrate, particularly an SOI substrate having a trap rich layer. In one embodiment, a FET is configured such that, in a standby mode, the FET is turned OFF while maintaining essentially the same VDS as during an active mode. In another embodiment, a FET is configured such that, in a standby mode, current flow through the FET is interrupted while maintaining essentially the same VGS as during the active mode. In another embodiment, a FET is configured such that, in a standby mode, the FET is switched into a very low current state (a “trickle current” state) that keeps both VGS and VDS close to their respective active mode operational voltages. Optionally, S-contacts may be formed in an IC substrate to create protected areas that encompass FETs that are sensitive to accumulated charge effects.

The invention discloses a strained silicon MOS device on a fully-depleted insulator and a preparation method thereof, the device comprises an SOI substrate, the upper surface of the SOI substrate is sequentially provided with a shallow groove channel isolation region, a first epitaxial groove, a second epitaxial groove and a second shallow groove channel isolation region along a first direction, the shallow groove channel isolation region comprises an isolation filling material, the epitaxial groove is internally provided with an epitaxial layer, and the first epitaxial groove and the second epitaxial groove are communicated with each other; a source electrode / drain electrode is arranged on the epitaxial layer; the substrate between the epitaxial grooves is a strained silicon layer, a gate oxide layer is arranged on the upper surface of the strained silicon layer, and a gate is arranged on the upper surface of the gate oxide layer; the thermal expansion coefficient of the isolation filling material is different from that of the strained silicon layer, and the lattice constant of the epitaxial layer material is different from that of the strained silicon layer. According to the invention, two uniaxial compressive stresses from different sources are introduced into the channel region of the MOS device, so that the carrier mobility can be improved, and the performance of the MOS device is improved.

The present invention is a substrate for a high-frequency device in which a nitride semiconductor film is formed on an SOI substrate, the SOI substrate being a TRSOI substrate in which a trap-rich layer formed on a base substrate and an SOI layer comprising single crystal silicon are bonded with an oxide film interposed therebetween, the SOI layer having a resistivity of 1 k [omega] * cm or more and a crystal plane orientation of (111). And the oxygen concentration is 14.8 ppma or less. As a result, a substrate for a high-frequency device having excellent high-frequency characteristics and a method for manufacturing the same are provided.

The invention belongs to the field of MEMS sensors, and discloses a high-temperature-resistant MEMS pressure sensor chip and a packaging structure thereof. The chip is provided with an SOI substrate, an AlN layer and a SiO2 layer from bottom to top, a plurality of P-type piezoresistors are arranged on the uppermost layer of the SOI substrate and are symmetrically distributed at the stress concentration position of the edge of the elastic diaphragm; a channel which continuously penetrates through the AlN layer and the SiO2 layer is arranged above the P-type piezoresistor; a metal Pad is arranged in the channel; the upper end of the metal Pad is located on the uppermost layer of the high-temperature-resistant MEMS pressure sensor chip, and the lower end of the metal Pad is in contact with the P-type piezoresistor. According to the invention, the relatively thick buried oxide layer can resist a high-temperature severe environment, and an AlN heat dissipation material with a high heat conductivity coefficient is deposited, so that rapid heat dissipation at a high temperature is ensured; and meanwhile, the stability and the reliability of the sensor are improved by adopting leadless packaging, and the packaging density is further optimized.

The invention provides a manufacturing method of an SOI BCD process integrated SGT device, and the method comprises the steps: providing an SOI substrate of a first conduction type, the SOI substrate is composed of a substrate of the first conduction type, an oxide layer and a thin silicon layer which are sequentially stacked from bottom to top, and the substrate comprises a forming region of an MOS device of the first conduction type, a forming region of an LDMOS device and a forming region of an SGT device; removing the oxide layer and the thin silicon layer on the SGT device, and then forming an epitaxial layer of a first conductive type on the substrate; shallow trench isolation is formed on the epitaxial layer to define an active region, a first deep trench and a second deep trench are respectively formed on the epitaxial layer in the formation region of the MOS device of the first conductive type and the formation region of the LDMOS device, and the bottom ends of the first deep trench and the second deep trench extend to the substrate; and respectively forming a first deep trench isolation structure and a second deep trench isolation structure in the first deep trench and the second deep trench. According to the invention, the SGT device and the LDMOS device are integrated, a solution is provided for the manufacturing of the intelligent high-side switch chip, and the competitiveness is improved.

The invention provides a semiconductor device and a manufacturing method thereof, and the method comprises the steps: providing an SOI substrate which comprises a lower substrate, an insulating buried layer and a semiconductor layer from bottom to top; a gate layer and a first conductive structure are formed, the gate layer is formed on the semiconductor layer, the first conductive structure penetrates through the semiconductor layer and the insulating buried layer to be electrically connected with the lower substrate, and the first conductive structure is insulated from the semiconductor layer; forming a source region and a drain region in the semiconductor layer at two sides of the gate layer; forming an interlayer dielectric layer on the semiconductor layer, wherein the interlayer dielectric layer covers the gate layer, the first conductive structure, the source region and the drain region; and forming a contact plug in the interlayer dielectric layer on the source electrode region and the drain electrode region, and simultaneously forming a second conductive structure in the interlayer dielectric layer on the first conductive structure. According to the technical scheme, the influence of the process for forming the conductive structure on the structure of the contact plug can be avoided, and the difficulty of the process for forming the conductive structure can be reduced.

The invention discloses a preparation method of a diamond gallium nitride composite wafer, which belongs to the field of semiconductors, and comprises the following steps: providing a temporary wafer and an SOI substrate, the SOI substrate comprising a first silicon layer, an insulating layer and a second silicon layer which are stacked in sequence; growing a gallium nitride epitaxial layer on the surface of the second silicon layer; bonding the temporary wafer with the gallium nitride epitaxial layer; preparing a first groove structure on the surface of the first silicon layer; the first groove structure is filled with corrosive liquid or ultrasonic cleaning liquid to remove the insulating layer in the bonding sheet, and the first silicon layer is driven to fall off when the insulating layer is removed; growing diamond on the surface of the second silicon layer; preparing a second groove structure on the surface of the temporary wafer; the first groove structure is filled with corrosive liquid, the bonding layer in the first wafer is removed through corrosion of the corrosive liquid, the temporary wafer is driven to fall off when the bonding layer is removed, the diamond gallium nitride composite wafer is obtained, and therefore the quality and the yield of the diamond gallium nitride composite wafer can be improved.

The invention discloses a silicon substrate-chalcogenide glass-plasmon hybrid integrated waveguide structure and a preparation method thereof, and belongs to the technical field of integrated optics, the silicon substrate-chalcogenide glass-plasmon hybrid integrated waveguide structure comprises an SOI substrate, a dielectric layer is arranged on top silicon of the SOI substrate, metal and chalcogenide glass are arranged on the dielectric layer, a plasmon slit waveguide structure is formed between the metal, and the chalcogenide glass is arranged between the metal and the plasmon slit waveguide structure. The end parts of the metal slit are respectively connected with the end parts of different chalcogenide glass, and extend outwards along the extension line of the slit to form a chalcogenide glass-metal slit-chalcogenide glass structure. Silicon-based-chalcogenide-plasmon waveguides are combined, the tolerance of an overlay process is increased in an interlayer mode conversion mode, the transmission loss of the plasmon waveguides is improved in a silicon-based-plasmon mixed waveguide mode, the robustness of the device is improved, and the device functions of low loss and high mode conversion efficiency are achieved. And the application of the plasmon integrated optical waveguide device in hybrid integrated optoelectronic devices and nonlinear optical regulation and control is promoted.

The invention provides an SOI substrate containing an intermediate semiconductor layer and a preparation method thereof, and the method comprises the steps: sequentially forming a first insulating layer and an amorphous semiconductor material layer on one of a semiconductor layer and a second substrate, and forming a second insulating layer on the other one; forming an initial bonding structure in a mode that the first insulating layer, the amorphous semiconductor material layer and the second insulating layer are clamped between the first substrate and the second substrate; transferring the semiconductor layer to the second substrate by removing a portion of the first substrate away from the amorphous semiconductor material layer; and performing reinforcement treatment on the initial bonding structure, and recrystallizing the amorphous semiconductor material layer and converting the amorphous semiconductor material layer into a polycrystalline state to form an intermediate semiconductor layer. In the preparation method, the amorphous semiconductor material layer is introduced between the substrate layer and the top functional layer, compared with a polycrystalline semiconductor layer, the amorphous semiconductor material layer is easy to polish, the surface roughness can be optimized, the polishing difficulty of a bonding interface is further reduced, and the bonding quality and the processing quality of the SOI substrate are improved.

The invention discloses a preparation method of an FD-SOI substrate structure through a hydrogen, boron and nitrogen ion implantation process, and belongs to the technical field of semiconductor design and manufacturing. The preparation method comprises the following steps: preparing a first wafer and a second wafer; performing thermal oxidation treatment on the surface of the first wafer; performing hydrogen ion implantation and boron and nitrogen ion implantation processes on the first wafer to enable the first wafer to form a hydrogen implantation layer below the insulating oxide layer and form a boron and nitrogen implantation layer between the hydrogen implantation layer and the insulating oxide layer; combining the surface of the insulating oxide layer of the first wafer with a second wafer through a bonding process; stripping the first wafer, and recrystallizing the top silicon film through thermal annealing treatment; and etching the top-layer silicon film to be below the boron-nitrogen injection layer through wet etching treatment, so that the top-layer silicon film reaches the required thickness. According to the invention, the required ultrathin film structure can be obtained in a more controllable manner, and the single crystal property of the top silicon film is ensured.

The invention provides a semiconductor structure and a forming method thereof, the semiconductor structure comprises an SO I substrate, the SO I substrate comprises a bottom silicon layer, an insulating layer and a top silicon layer, the SO I substrate comprises a strip-shaped waveguide area and a ridge-shaped waveguide area, and a hard mask layer is formed on the surface of the SO I substrate; a strip-shaped waveguide is formed in the top silicon layer of the strip-shaped waveguide area, and a ridge-shaped waveguide is formed in the top silicon layer of the ridge-shaped waveguide area. According to the semiconductor structure and the forming method thereof, the influence of the etching load effect can be optimized, the etching depth accuracy of the ridge waveguide region and the grating region is improved, and the device performance is improved.

The invention provides a preparation method of an SOI (Silicon On Insulator) substrate. The method comprises the following steps: providing a device substrate and a supporting substrate; forming an oxide layer on the surface of at least one of the device substrate and the support substrate; injecting bubbling ions into the device substrate; injecting modified ions above the bubbling ion injection region of the device substrate, wherein the modified ions are Ar ions; bonding the device substrate and the support substrate; and annealing to strip the device substrate at the position where the bubbling ions are injected to form the SOI substrate. The Ar ions are injected into the device layer as modified ions, so that the effective bonding area of the device substrate and the supporting substrate can be enlarged, the size of the suspended part of the edge of the device layer is relatively reduced, and the risk of subsequent edge breakage and fragmentation is reduced.

The present application discloses an optical chip and a preparation method for the optical chip. The optical chip includes a heat isolation substrate and an optical device structure layer formed based on a top silicon layer in an SOI substrate and located above the heat isolation substrate; where the heat isolation substrate is in a single-layer material structure or a laminated structure including a plurality of material layers, and the heat isolation substrate comprises at least one material layer formed of a material with a thermal conductivity less than 100 W / (m·K); the optical device structure layer sequentially from bottom to top includes: a protection layer; and a first optical device layer located on the protection layer and including at least one first optical device, where a light beam exiting through the optical device structure layer exits upward to a detection space.

The present invention is a nitride semiconductor substrate for high frequency, which includes an SOI substrate in which a single crystal silicon thin film is formed on a single crystal silicon substrate via a silicon oxide layer, and a nitride semiconductor layer including a GaN layer formed on the SOI substrate; in which the single crystal silicon thin film contains nitrogen at a concentration of 2.0×1014 atoms / cm3 or more and has a resistivity of 100 Ωcm or more, the single crystal silicon substrate has a resistivity of 50 mΩcm or less, and the silicon oxide layer has a thickness of 10 to 400 nm. This can provide the nitride semiconductor substrate in which the nitride semiconductor layer is grown on the SOI substrate for manufacturing devices for high frequency, and the nitride semiconductor substrate with suppressed plastic deformation.

The invention discloses a field-grinding direct-current modulation and coil induction integrated MEMS electric field sensor, and the sensor comprises a spiral coil induction electrode which is disposed on an SOI substrate, and converts the periodic change of an alternating-current electric field into a first signal; the comb tooth electrode structure is fixedly arranged on the SOI substrate and comprises a piezoelectric driving structure, at least two movable shielding electrodes and at least two fixed induction electrodes, and the piezoelectric driving structure is fixedly connected with the SOI substrate; the movable shielding electrode is elastically connected with the piezoelectric driving structure and generates periodic vertical displacement under the driving of the piezoelectric driving structure; the fixed induction electrode and the movable shielding electrode are correspondingly arranged to form an electrode group, and the low-frequency alternating-current and direct-current electric fields are modulated and converted into second signals. The invention has the beneficial effects that the full-band measurement of direct-current, low-frequency and high-frequency signals is realized, the measurement frequency range of the sensor is widened, the processing difficulty and the manufacturing cost are reduced, and the production efficiency is improved.

A semiconductor light emitting device includes a semiconductor light emitting laminate, and an SOI substrate including an upper semiconductor layer, an interlayer insulating film, and a lower semiconductor layer. The SOI substrate includes a first wiring electrode provided on the upper semiconductor layer through an insulating film and corresponding to a p-electrode, a second wiring electrode connected to the upper semiconductor layer and corresponding to an n-electrode, an anode that is provided on the lower semiconductor layer and connected to a first wiring electrode by a first via electrode passing through the SOI substrate, a cathode that is provided on the lower semiconductor layer through an insulating film and connected to the upper semiconductor layer by a second via electrode reaching the upper semiconductor layer. The p-electrode and the n-electrode are respectively bonded to the first wiring electrode and the second wiring electrode.

A kind of heart sound sensing structure and its preparation method, the structure includes double SOI substrate, center mass, elastic support beam, piezoresistive sensing unit and capacitive sensing unit.The front surface of center mass is provided with additional mass layer, and the back surface is kept bottom layer silicon to increase thickness;Elastic support beam connects mass and frame;Piezoresistive sensing unit is composed of four piezoresistors to form wheatstone bridge, and capacitive sensing unit includes movable and fixed comb-tooth capacitive plate crossing each other.When the sound pressure gradient of heart sound signal drives mass to deviate, elastic support beam bends to change piezoresistive value, and at the same time, comb-tooth capacitive plate overlapping area changes to cause capacitive value change, to realize piezoresistive and capacitive dual-mode synchronous detection.Two kinds of detection mechanisms calibrate each other, which significantly improves the sensitivity and anti-interference ability of low-frequency heart sound signal.The preparation method is based on double SOI substrate, integrated by ion implantation, etching, metal deposition and 3D printing process, suitable for miniaturized wearable heart sound monitoring application.

The invention relates to the technical field of photoelectric detector equipment, and discloses an ultra-high-speed silicon waveguide type photoelectric detector and a preparation method. The ultra-high-speed silicon waveguide type photoelectric detector comprises an SOI substrate, the SOI substrate is sequentially provided with a top silicon layer, a buried oxide layer and a bottom silicon substrate from top to bottom, the top silicon layer is etched to form a silicon waveguide structure, the silicon waveguide structure comprises a light absorption area and a spot size coupling area, and the spot size coupling area is formed in the light absorption area. A spot-size coupling structure is fixedly arranged on one side of the silicon waveguide structure, the spot-size coupling structure is of a rectangular pyramid structure, and the small-area surface of the frustum surface of the spot-size coupling structure is connected with a spot-size coupling area of the silicon waveguide structure; heavily-doped silicon areas are arranged on the buried oxide layers on the two sides, adjacent to the spot-size coupling structure, of the silicon waveguide structure, a plurality of metal electrode plates are arranged on the heavily-doped silicon areas, and a silicon oxide covering layer is arranged on the surface of the spot-size coupling structure; the invention has the advantages of realizing high-efficiency light absorption and high-frequency response.

The invention discloses a preparation method of an FD-SOI substrate structure through a hydrogen, carbon and germanium ion implantation process, and belongs to the technical field of semiconductor design and manufacturing, and the method comprises the steps: preparing a first wafer and a second wafer; performing thermal oxidation treatment on the surface of the first wafer; performing hydrogen ion implantation, carbon ion implantation and germanium ion implantation on the first wafer to enable the first wafer to form a hydrogen implantation layer below the insulating oxide layer, form a first implantation layer between the hydrogen implantation layer and the insulating oxide layer, and form a second implantation layer between the first implantation layer and the insulating oxide layer; combining the first wafer with the second wafer; stripping the first wafer to form a top silicon film on the second wafer, and recrystallizing the top silicon film through thermal annealing treatment; and etching the top silicon film to the required thickness through wet etching treatment. The top silicon film prepared by the method can be thinner and higher in size precision, and the process consistency is stable.

A film structure comprises a substrate and a buffer film formed on the substrate. The substrate is a 36° to 48° rotated Y-cut Si substrate, or the substrate is a SOI substrate comprising a base substance made of the 36° to 48° rotated Y-cut Si substrate, an insulating layer on the base substance, and a SOI layer made of a Si film on the insulating layer, and a Miller index of a crystal plane of an upper surface of the SOI layer is equal to the Miller index of a crystal plane of an upper surface of the base substance. The buffer film comprises ZrO2 epitaxially grown on the substrate.

The invention relates to a method and a device for cleaning the edge of an SOI (Silicon On Insulator) substrate. The method for cleaning the edge of the SOI substrate comprises the following steps of: providing the SOI substrate to be cleaned, wherein the SOI substrate comprises a front surface and a back surface which are oppositely distributed; spraying chemical cleaning liquid to the edge area of the front surface of the SOI substrate, and spraying gas to the back surface of the SOI substrate at the same time to form a gas protection layer covering the back surface of the SOI substrate; and washing the SOI substrate by using deionized water, and removing the residual chemical cleaning liquid. According to the invention, corrosion of chemical cleaning liquid to the back surface of the SOI substrate is reduced and even avoided, so that the cleaned SOI substrate meets strict quality requirements of an integrated circuit on the surface of the SOI substrate.

An integrated circuit device includes: a semiconductor on insulator (SOI) substrate layer including a base substrate layer, an insulating substrate layer, and a cover substrate layer; a semiconductor substrate layer; a plurality of first fin-type active areas and a plurality of second fin-type active areas each defined by a plurality of trenches, and extending in a first horizontal direction, in above the SOI substrate layer and the semiconductor substrate layer, respectively; a plurality of nanosheet stacked structures comprising nanosheets extending in parallel with each other and spaced apart from upper surfaces of the plurality of first fin-type active areas and the plurality of second fin-type active areas; a plurality of first source / drain regions extending into the SOI substrate layer; and a plurality of second source / drain regions extending into the semiconductor substrate layer. Lower surfaces of the first and second source / drain regions may not be coplanar with each other.

The application belongs to the technical field of micro electro mechanical system sensors, and discloses an acceleration sensor chip with a DLC optimized structure and a preparation method thereof; in the piezoresistive acceleration sensor chip, an SOI substrate is bonded to boron glass through a substrate frame, and a center mass is connected to the substrate frame through four embedded micro-beams arranged in a cross shape; four piezoresistance strips are arranged on the four embedded micro-beams, and the four piezoresistance strips are connected into a Wheatstone full bridge through surface metal leads deposited on the SOI substrate and connected with pads deposited on the SOI substrate; wherein, a DLC film is deposited on the SOI substrate, and the DLC film covers the surface metal leads, the four piezoresistance strips and the area of the SOI substrate except the pads. The application can improve the sensitivity of the sensor while ensuring the strength of the sensitive structure; the protection of the piezoresistance strips is realized, and the reliability of the sensor can be improved.

This invention provides a quasi-two-dimensional / two-dimensional van der Waals heterojunction based on SOI and Si / WS2, its preparation method, and its application. The method includes the following steps: cleaning the SOI substrate; using sulfur powder, tungsten oxide powder, sodium chloride powder as a catalyst, and erbium chloride and ytterbium chloride powder as dopants, chemical vapor deposition is performed on the SOI substrate to prepare an erbium- and ytterbium-doped monolayer WS2 material; the top silicon layer of the SOI substrate is an n-type silicon layer. This invention, employing the above-mentioned quasi-two-dimensional / two-dimensional van der Waals heterojunction based on SOI and Si / WS2, its preparation method, and its application, effectively reduces the defect density during material synthesis while significantly increasing the carrier concentration in the material. The prepared photodetector exhibits good photoelectric response performance, providing a simple and efficient new method for the preparation of high-performance heterojunction photodetectors.

A film structure (10) includes a Si layer (12a), a ZrO2 layer (12b), which is a buffer film containing ZrO2, formed on the Si layer (12a), and a piezoelectric film (11) formed on the ZrO2 layer (12b). The Si layer 12a is an SOI layer on a Si(100) substrate or an SOI substrate including a base made of a Si substrate, an insulating layer on the base, and an SOI layer made of a Si(100) film on the insulating layer. The piezoelectric film (11) includes c-axis oriented LiNbO3 or LiTaO3.

Provided is a light detection device in which an oxide film is formed on the bottom of a fin of a transistor in a bulk substrate without using an SOI substrate. The light detection device includes a first substrate portion and a second substrate portion. The first substrate portion has pixels that photoelectrically convert incident light. The second substrate portion is bonded to a surface of the first substrate portion opposite to a light incident surface. The second substrate portion has a plurality of elements constituting a readout circuit configured to output a pixel signal based on a charge output from the pixel. A pattern of an insulating film is formed on a bonding surface of the second substrate part that is bonded to the first substrate part.

The invention provides a semiconductor structure and a manufacturing method thereof, and the method comprises the steps: providing a substrate structure which comprises a back substrate, a buffer layer and a top silicon layer, a second groove is formed in the base structure, and the buffer layer is removed through etching of the second groove so that a cavity can be formed between the back substrate and the top silicon layer; according to the method, the top silicon layer is provided with a cavity, the cavity is filled with a buried oxide layer to form the SOI substrate, so that the thickness of the top silicon layer and the thickness of the buried oxide layer can be controlled to obtain the SOI substrate with the ideal thickness, the SOI substrate is prevented from being formed through an ion implantation process, correspondingly, ion implantation damage is avoided, and the quality and reliability of the formed SOI substrate are improved.

Semiconductor-on-insulator substrate, SOI substrate, comprising: a handling substrate (104); a device layer (108) that lies above the handling substrate (104); and an insulating layer (106) separating the handling substrate (104) from the device layer (108), wherein the insulating layer (106) meets the device layer (108) at a first interface and meets the handling substrate (104) at a second interface, wherein the insulating layer (106) has a getter material with a getter concentration profile, the getter concentration profile having a first peak concentration at the first interface, a second peak concentration at the second interface and a trough concentration at a location between the first interface and the second interface, wherein the trough concentration is smaller than each of the first peak concentration and the second peak concentration, the getter material contains fluorine.