289 results about "Silicon electrode" patented technology

The invention discloses a carbon/silicon/carbon nano composite structure cathode material and a preparation method thereof, belonging to the technical field of electrochemical power supply technologies. The cathode material consists of a carbon-based conductive substrate, nano silicon and a nano carbon coating layer, wherein the nano silicon is uniformly distributed on the carbon-based conductive substrate; the nano carbon coating layer is arranged on the surface of the nano silicon; the carbon-based conductive substrate is porous carbon, a carbon nanotube or graphene; the nano silicon exists in the state of nanoparticles or nano films; the weight percentage of the nano silicon in the cathode material is 10-90 percent; and the thickness of the nano carbon coating layer is 0.1-10 nanometers. The preparation method comprises the following steps of: depositing nano silicon on the carbon substrate in a reaction space in oxygen-free atmosphere by adopting a chemical vapor deposition process; and coating nano carbon on the surface of the nano silicon by adopting the chemical vapor deposition process. In the obtained carbon/silicon/carbon composite cathode material, the volume change of a silicon electrode material is controlled effectively in the charging and discharging processes, the electrode structure is kept complete, the circulation volume is large, the circulation service life is long, and the electrochemical performance is high.

A silicon electrode for a plasma reaction chamber wherein processing of a semiconductor substrate such as a single wafer can be carried out and a method of processing a semiconductor substrate with the electrode. The electrode is a low resistivity electrode having an electrical resistivity of less than 1 ohm-cm. The electrode can be a zero defect single crystal silicon or silicon carbide electrode such as a showerhead electrode bonded or clamped to support such as a temperature controlled plate or ring. The showerhead electrode can be in the form of a circular disk of uniform thickness and an elastomeric joint can be provided between a support ring and the electrode. The electrode can include gas outlets having 0.020 to 0.030 inch diameters.

A compliant monopolar micro device transfer head array and method of forming a compliant monopolar micro device transfer array from an SOI substrate are described. In an embodiment, the micro device transfer head array including a base substrate and a patterned silicon layer over the base substrate. The patterned silicon layer may include a silicon interconnect and an array of silicon electrodes electrically connected with the silicon interconnect. Each silicon electrode includes a mesa structure protruding above the silicon interconnect, and each silicon electrode is deflectable into a cavity between the base substrate and the silicon electrode. A dielectric layer covers a top surface of each mesa structure.

A resistive switching memory element including a doped silicon electrode is described, including a first electrode comprising doped silicon having a first work function, a second electrode having a second work function that is different from the first work function by between 0.1 and 1.0 electron volts (eV), a metal oxide layer between the first electrode and the second electrode, the metal oxide layer switches using bulk-mediated switching and has a bandgap of greater than 4 eV, and the memory element switches from a low resistance state to a high resistance state and vice versa.

A compliant bipolar micro device transfer head array and method of forming a compliant bipolar micro device transfer array from an SOI substrate are described. In an embodiment, a compliant bipolar micro device transfer head array includes a base substrate and a patterned silicon layer over the base substrate. The patterned silicon layer may include first and second silicon interconnects, and first and second arrays of silicon electrodes electrically connected with the first and second silicon interconnects and deflectable into one or more cavities between the base substrate and the silicon electrodes.

The invention relates to a nano-silicon amorphous carbon composition lithium ion battery cathode material and a preparation method therefore, belonging to the field of electrochemistry power supply. The cathode material consists of a substrate and granules distributed evenly thereon, wherein, cores of the nano-granules are nano-silicon while shells thereof are amorphous carbon obtained by pyrogenation of organic substance; and the substrate thereof is obtained by pyrogenation and carbonization of organic electrospun fibre; wherein, content range of monomer silicon is 10%-50% and content range of amorphous carbon is 90%-50%. The preparation method comprises that nano-silicon granules and electrospun-available organic substances are uniformly stirred and mixed in solvent; high-voltage static electrospun is carried out to obtain fibrous composition; temperature is maintained at 80-200 DEG C, so as to volatilize the solvent completely; and carbonization is then carried out at 400-1000 DEG C. The silicon/carbon composition cathode material prepared by the method can effectively control volume change of silicon electrode material in charging and discharging process. Therefore, the electrode structure is maintained integral; the volume is released gradually. And the silicon/carbon composition cathode material has large circular volume, long circular service life and excellent electrochemical performance.

A method of and a structure for controlling the temperature of an electrode (4). The electrode is heated prior to etching the first wafer and both a (temporally) stationary and a (spatially) homogeneous temperature of the silicon electrode are maintained. Resistive heater elements (1) are either embedded within the housing of the electrode (3) or formed as part of the electrode. The resistive heater elements form a heater of a multi-zone type in order to minimize the temperature non-uniformity. The resistive heater elements are divided into a plurality of zones, wherein the power to each zone can be adjusted individually, allowing the desirable temperature uniformity of the electrode to be achieved. Preheating the electrode to the appropriate operating temperature eliminates both the “first wafer effect” and non-uniform etching of a semiconductor wafer.

A plasma processing system for etching a semiconductor wafer comprises: 1) a plasma chamber in which the semiconductor wafer may be mounted; 2) an upper ring capable of being mounted on an upper opening of the plasma chamber, wherein a central portion of the upper ring forms a hole; and 3) an electrode plate having a plurality of vias therethrough. The electrode plate is disposed in the hole in the upper ring, wherein the central portion of the upper ring further forms a shelf for supporting the electrode plate in the hole.

The invention provides a high-performance binder for silicon materials for lithium ion batteries, which is a polyacrylonitrile copolymer, a polymeric monomer of the copolymer comprises acrylonitrile, also comprises a second monomer and/or a third monomer; and the second monomer is a monobutyl itaconate monomer, and the third monomer is selected from a mixture of one or more of an itaconic acid, sodium allylsulfonate, acrylamide, amino, a pyridyl or acylamino monomer, n-butyl acrylate or methyl acrylate. The invention also provides a preparation method of the binder. Compared with existing binders, the binder disclosed by the invention has better binding power, can effectively improve the expansion of silicon materials in the processes of charging and discharging, and can improve the performance of a silicon electrode in the process of cycling. Meanwhile, the binder is simple in preparation method, low in cost and good in repeatability, and can achieve the practical need of mass production.

A gate electrode with a double diffusion barrier and a fabrication method of a semiconductor device including the same are provided. The gate electrode of a semiconductor device includes: a silicon electrode; a double diffusion barrier formed on the silicon electrode and including at least a crystalline tungsten nitride-based layer; and a metal electrode formed on the double diffusion barrier.

This silicon electrode plate for plasma etching is a silicon electrode plate for plasma etching with superior durability including silicon single crystal which, in terms of atomic ratio, contains 3 to 11 ppba of boron, and further contains a total of 0.5 to 6 ppba of either or both of phosphorus and arsenic.

A method of producing a semiconductor device having a thickness of 90 μm to 200 μm and with an electrode on the rear surface, which achieves a high proportion of non-defective devices by optimizing the silicon concentration and thickness of the aluminum-silicon electrode. A surface device structure is formed on a first major surface of a silicon substrate. A buffer layer and a collector layer are formed on the second major surface after grinding to reduce the thickness of the substrate. On the collector layer, a collector electrode is formed including a first layer of an aluminum-silicon film having a thickness of 0.3 μm to 1.0 μm and a silicon concentration of 0.5 percent to 2 percent by weight, preferably not more than 1 percent by weight.

The invention relates to an all-silicon MEMS (Micro Electro-Mechanical Systems) device. The all-silicon MEMS device consists of a liner SOI silicon chip (17), a structural layer silicon chip (10) and a nut cap SOI silicon chip (16) which are subjected to direct silicon-silicon bonding, and is characterized in that a top silicon (6) of the structural layer silicon chip (10) and the nut cap SOI silicon chip are low-resistance silicon; the top silicon (6) of the nut cap SOI silicon chip is made into an electric interconnection wire and subjected to direct silicon-silicon bonding with the structural layer silicon through a bonding face (5); an electrical signal of the structural layer is led to a silicon electrode (9) in the nut cap SOI silicon chip through the electric interconnection wire and is electrically connected with a pressure welding point (3) on the silicon electrode (9); the silicon electrode (9) is subjected to direct silicon-silicon bonding with the structural layer silicon. The all-silicon MEMS device has the advantages that as the nut cap layer bulk silicon wires are adopted, the structural layer is prevented from pickling splash damage; as twice direct silicon-silicon bonding is adopted, residual stress is eliminated; the direct silicon-silicon bonding is good in airtightness; a getter does not need to be additionally added during vacuum packaging, so that the cost is effectively reduced.

The present invention relates to a method of selectively fabricating metal gate electrodes in one or more device regions by fully siliciding (FUSI) the gate electrode. The selective formation of FUSI enables metal gate electrodes to be fabricated on devices that are compatible with workfunctions that are different from conventional n+ and p+ doped poly silicon electrodes. Each device region consists of at least one Field Effect Transistor (FET) device which consists of either a polysilicon gate electrode or a fully silicided (FUSI) gate electrode. A gate electrode comprised of silicon and a Ge containing layer is used in combination with a selective removal process of the Ge containing layer. The Ge containing layer is not removed on devices with threshold voltages that are not compatible with the FUSI workfunction. Devices that are compatible with the FUSI workfunction have the Ge containing layer removed prior to the junction silicidation step. The remaining thin silicon layer of the gate electrode becomes fully silicided during the same step as the junction silicidation step.

The present invention discloses an acceleration transducer based on nano-resonator, including four supporting beams, mass block and basement, which are covered by insulation layer, the impending mass block is connected with the basement via four supporting beams; upper the insulation layer ends of the four supporting beams are provided with eight pair electrodes, nano-resonant beams are respectively related joint and fixed to the corresponding electrode couple, the nano-resonant beam applies semiconductor nano-wire or semiconductor nano-tube; the nano-resonant beam, upper metallic electrode couple and the lower silicon electrode constitute field-effect tranisistor structure, the lower silicon electrode and the upper metallic electrode couple is separated by insulation layer, and the upper metallic electrode couple are respectively source and drain, the lower silicon electrode is gate electrode. The invention also discloses a method of producing the acceleration transducer and method of measuring acceleration by using the acceleration transducer. The invention applies the semiconductor nano-wire or semiconductor nano-tube as the nano-resonant beam to implement high-sensitivity measurement of transducer via frequency mixing phase-lock technique.

The invention discloses an adhesive-free graphene/silicon electrode for a lithium ion battery and a preparation method thereof. The adhesive-free graphene/silicon electrode comprises a graphene/silicon multilayer structure layer and a copper foil and is prepared through the following steps of: 1, preparing a graphite oxide solution; 2, preparing a graphene colloid; 3, carrying out surface modification treatment on the copper foil; 4, preparing the adhesive-free graphene/silicon electrode: dispersing silicon into deionized water, adding a surface active agent, and uniformly carrying out ultrasonic dispersion; adding the graphene colloid, and carrying out ultrasonication and stirring for uniform dispersion to obtain graphene/silicon mixed slurry; uniformly coating the graphene/silicon mixed slurry on the treated copper foil by using a film coating machine; carrying out vacuum drying, and then carrying out cold pressing treatment to prepare the adhesive-free graphene/silicon electrode with a very good adhesion effect. The adhesive-free graphene/silicon electrode prepared through the method disclosed by the invention has the advantages of high active substance and copper foil bonding force, high capacity, good circulating stability, no need of adhesive usage, simple process and easiness for industrial large-scale production.