59 results about "Silicon electrode" patented technology

According to the invention, the bonding strength between wafers in the semiconductor manufacturing process is improved through a simple structure. Provided is a vacuum chamber (14) for bonding semiconductor wafers (W1, W2) to each other, one using a silicon electrode (G1) and the other using a semiconductor wafer (W2) before bonding crystalline silicon circles (W1, W2) facing each other; after the silicon electrode G1 and the semiconductor wafer W2 are processed for the first time, the silicon electrode G1 is replaced by the bonding wafer G2, and then the bonding wafer G2 and the semiconductor wafer W2 are processed for the second time. Then, the pair of wafers W1 and W2, which are opposite to each other, are bonded together by electrostatic force in a vacuum environment.

The present invention belongs to the technical field of composite silicon-based negative electrode materials and discloses a composite silicon-based negative electrode material, a preparation method, and a solid-state battery. The composite silicon-based negative electrode material comprises a graphite substrate and silicon carbide nanowires and nanosilicon particles attached to the surface of the graphite substrate. The silicon carbide nanowires are interwoven to form a network structure, and the nanosilicon particles are dispersed in the network structure. The nanosilicon particles are dispersed in the network of interwoven silicon carbide nanowires, presenting a porous structure similar to that of reinforced concrete. The porous structure provides space for volume expansion, mitigating damage to the electrode structure caused by volume expansion during lithium insertion and extraction of the silicon-based negative electrode. At the same time, the one-dimensional silicon carbide therein, due to its high mechanical strength, can mitigate damage to the electrode structure caused by long-term cycling of the silicon negative electrode, thereby improving the mechanical properties of the silicon negative electrode and thus improving the cycling performance of the silicon electrode.

To provide a silicon electrode plate for a plasma processing apparatus.SOLUTION: A silicon electrode plate for a plasma processing apparatus comprises: a plate central part 31 and a plate peripheral part 32 provided around the central part. The silicon electrode plate includes: a first surface 301 which is circularly formed by one surface 32A of the plate peripheral part 32 and one surface 31A of the plate central part 31 provided with an inlet 111 of a gas flow path 11, arranged flush with each other; a second surface 302 which is circularly formed by the other surface 31B of the plate central part 31, and provided with an outlet 112 of the gas flow path 11; and an annular surface 303 which is annularly formed by the other surface 32B of the plate peripheral part 32, located opposite the first surface 301. In an observation of ten areas of a top surface cross-section of the annular surface 303 under a scanning electron microscope with a field of view of 12.80 μm×9.60 μm, the total number of microcracks with a size of 1.0 μm or more is two or fewer, or the total number of foreign substances with a size of 1.0 μm or more is two or fewer. Furthermore, the average value of the arithmetic mean roughness Ra of the annular surface 303 is 0.40 μm or less.SELECTED DRAWING: Figure 3

The present invention provides a double silicon-gold bonded MEMS deformable mirror and its fabrication method. The MEMS deformable mirror comprises a silicon wafer substrate, a silicon nitride insulating layer, a lower polysilicon electrode, a first phosphosilicate glass sacrificial layer, an upper interdigitated electrode, a first bonding electrode layer, an SOI wafer structure, a second bonding electrode layer, and a gold-based reflective mirror surface. The fabrication method sequentially involves silicon wafer substrate pretreatment, silicon nitride insulating layer deposition, lower polysilicon electrode formation, first phosphosilicate glass sacrificial layer deposition and thinning, upper interdigitated electrode and related structure etching, first bonding electrode layer formation, SOI wafer pretreatment and solution channel formation, second phosphosilicate glass sacrificial layer filling, second bonding electrode layer formation, gold-to-gold hot-compression bonding, deep silicon etching, structural release and annealing, and gold-based reflective mirror surface fabrication and packaging. This invention can simplify the process flow, improve the correction performance of optical systems, and has broad market application prospects.

The invention belongs to the technical field of material chemistry, and particularly relates to a method for photo-initiation in-situ preparation of an integrated silicon solid electrolyte and application. The preparation method comprises the following steps: firstly, adding PEGDA and UPyMA into DMSO, and carrying out ultrasonic uniform dispersion; and adding a photoinitiator porphyrin COF and a coinitiator TEA, and removing water and oxygen in the solution by a bubbling method. Under the protection of argon, adding LiTFSI and stirring at room temperature to prepare a polymer solid electrolyte precursor solution; and dropwise adding the precursor solution on the surface of a silicon electrode, irradiating with an ultraviolet lamp, and drying after complete polymerization to obtain the silicon negative electrode-polymer integrated solid electrolyte. The synthesis mode is simple and convenient, the yield is high, the effect is good, the composition can effectively solve the problem of a solid-solid interface in a solid electrolyte, the volume expansion of nano silicon is relieved, the ionic conductivity and the transference number are improved, the stability of an electrode material is maintained, and the composition can be used for all-solid-state lithium metal batteries and all-solid-state silicon batteries.

This invention relates to the field of silicon wafer polishing equipment technology and discloses a micro-force controlled chemical mechanical polishing system for processing silicon electrode raw materials, including a grinding base and a polishing section. The polishing section includes a polishing seat assembled within the grinding base. The grinding base is equipped with a carrier ring for placing silicon wafers via a cantilever mounted on its top. A grinding pressure loading mechanism is assembled within the grinding base, and a driving mechanism is also assembled within the grinding base. This micro-force controlled chemical mechanical polishing system for processing silicon electrode raw materials effectively solves the problem in the prior art where the polishing slurry supply mechanism often uses an independent supply pipe to drip from the side or top of the polishing pad. The centrifugal force generated by the rotation of the polishing seat will throw the non-centrally dripping polishing slurry radially outward, resulting in insufficient polishing slurry coverage in the center of the polishing seat and excessive accumulation at the edges, forming an uneven liquid film with a gradually thickening outer edge on the surface, ultimately affecting the polishing quality of the silicon wafer.

The utility model discloses a full-automatic wafer groove type cleaning machine sealing and pressurizing cleaning groove which comprises a tool body and an installation base arranged on the lower side of the middle of the tool body, a silicon electrode body is arranged on the inner side of the middle of the installation base, and a plurality of tool clamps are arranged on the outer portion of the upper side of the installation base. An upper spraying pipe and a lower spraying pipe are arranged at the left end and the right end of the upper side of the tool body correspondingly, direct cleaning of the lower side of the silicon electrode body is achieved, the tool body and the upper spraying pipe act together, turning over is not needed, the cleaning efficiency is greatly improved, meanwhile, the comprehensiveness of cleaning is guaranteed, and the working efficiency is improved. The low-efficiency process that manual overturning is needed after traditional single-face cleaning is avoided, high-pressure water flow is sprayed out through the spraying heads connected with the upper spraying pipe and the lower spraying pipe, the surface tension of water drops can be effectively overcome, the water drops directly permeate into tiny gaps of a silicon electrode body, the problem that deep cleaning cannot be conducted due to the influence of the tension of the water drops is solved, and the cleaning efficiency is improved. And the depth and thoroughness of cleaning are ensured.

The present invention discloses an electrode sheet preparation method, an electrode sheet, and a battery, and relates to the field of battery technology. The electrode sheet preparation method comprises: using a dry film-forming method to form an outer electrode film from a mixture of a silicon-containing electrode material and a pore-forming filler, wherein the pore-forming filler comprises a high-temperature vaporizing material and / or an electrolyte-soluble material, the high-temperature vaporizing material is used to vaporize at a preset temperature, and the electrolyte-soluble material is used to dissolve in the electrolyte; using a dry film-forming method to form an inner electrode film from a carbon-containing electrode material; rolling the outer electrode film and the inner electrode film to obtain a composite laminate; and rolling the composite laminate onto a current collector to obtain an electrode sheet. The electrode sheet preparation method provided by the present invention can produce an electrode sheet with small volume rebound and stable performance.

The application discloses a three-dimensional trench silicon electrode detector and a preparation method thereof. The detector is composed of a plurality of detection units. The detection unit comprises a silicon dioxide protective layer, an outer electrode arranged on the silicon dioxide protective layer, a silicon base and a center electrode arranged on the silicon dioxide protective layer and in the outer electrode. The silicon base comprises a base part and a nested part. The nested part is embedded in the outer electrode and located on the base part. The center electrode and the nested part are filled with an insulator between the center electrode and the outer electrode and between the nested part and the outer electrode. An electrode contact aluminum layer is arranged on the top of the outer electrode, the center electrode and the insulator. An electrode contact port is arranged on the electrode contact aluminum layer of the outer electrode and the center electrode. The application solves the problem that the existing detector has a small light absorption coefficient, a narrow absorption spectrum and cannot fully absorb and utilize solar energy.

The invention discloses a method for applying a silicon carbide electrode to step-by-step electrolysis of aluminum, belongs to the technical field of electrolytic aluminum, and aims to solve the problems that a carbon anode material adopted by the conventional electrolytic aluminum is easy to corrode in a high-temperature melting environment, the anode generates oxygen reaction loss, the service life is short, frequent replacement is needed, and the production cost is increased. Through combination of a step-by-step electrolysis process and a silicon carbide electrode, the production efficiency of electrolytic aluminum is improved, local concentration fluctuation is easily caused by direct feeding of aluminum oxide into an electrolytic bath in a traditional process, uniform mixing of aluminum oxide and cryolite is realized in advance through an independent dissolving tank, and under the precise temperature control of 950-1100 DEG C and the stirring effect of 30-50 r / min, the aluminum oxide and cryolite are mixed uniformly, so that the production efficiency of the electrolytic aluminum is improved. The aluminum oxide is completely converted into conductive melt, reaction fluctuation caused by uneven concentration is eliminated from the source, aluminum ions in an electrolytic bath are more continuously and uniformly separated out through homogenization treatment, the voltage of electrolytic aluminum is greatly reduced, the stable aluminum electrolysis process between 2.0 volts and 4.2 volts is achieved, and the energy utilization efficiency of the electrolytic aluminum is greatly improved.

The present application relates to the technical field of silicon carbide electrode, and particularly relates to a metallographic display method of silicon carbide electrode, which comprises the following steps: S1, providing a silicon carbide electrode, and cutting a sample from the silicon carbide electrode along the radial direction of the silicon carbide electrode, wherein both ends of the sample are cutting surfaces, and the cutting surfaces are perpendicular to the silicon carbide electrode; S2, solidifying the sample by adopting a metallographic cold inlaying method; S3, taking one of the cutting surfaces of the sample as a processing surface, and sequentially performing rough grinding, fine grinding and mirror polishing on the processing surface; and S4, performing etching treatment on the processing surface after the grinding and polishing treatment in step S3, so as to form a metallographic display surface. Through the method provided in the present application, the sample can be processed to form a metallographic display surface on the sample, and then the metallographic microscope can be used to observe the organizational structure of the sample section.

The invention provides an MEMS deformable mirror based on double-silicon gold bonding and a preparation method thereof. The MEMS deformable mirror comprises a silicon wafer substrate, a silicon nitride insulating layer, a lower polycrystalline silicon electrode, a first phosphorosilicate glass sacrificial layer, an upper interdigital electrode, a first bonding electrode layer, an SOI wafer structure, a second bonding electrode layer and a gold-based reflecting mirror surface. The preparation method sequentially comprises the steps of silicon wafer substrate pretreatment, silicon nitride insulating layer deposition, lower-layer polycrystalline silicon electrode formation, first phosphorosilicate glass sacrificial layer deposition and thinning, upper-layer interdigital electrode and related structure etching, first bonding electrode layer formation, SOI wafer pretreatment and solution channel formation, second phosphorosilicate glass sacrificial layer filling, high-temperature sintering, high-temperature sintering, high-temperature sintering, high-temperature sintering, high-temperature sintering, high-temperature sintering, high-temperature sintering, high-temperature sintering, high-temperature sintering, high-temperature sintering, high-temperature sintering and high-temperature sintering. The method comprises the following steps: preparing a first bonding electrode layer, forming a second bonding electrode layer, performing gold-gold hot pressing bonding, performing deep silicon etching, performing structure release and annealing treatment, and preparing and packaging a gold-based reflecting mirror surface. The method can simplify the technological process, improves the correction performance of the optical system, and has a wide market application prospect.

The present invention discloses a polysilicon-insulator-polysilicon capacitor and a manufacturing method thereof, wherein the polysilicon-insulator-polysilicon capacitor includes a substrate having a capacitor forming region; a first capacitor dielectric layer disposed on the capacitor forming region; a first polysilicon electrode disposed on the first capacitor dielectric layer; a second capacitor dielectric layer disposed on the first polysilicon electrode; a second polysilicon electrode disposed on the second capacitor dielectric layer; a third polysilicon electrode disposed on a first sidewall adjacent to the second polysilicon electrode; a third capacitor dielectric layer disposed between the third polysilicon electrode and the second polysilicon electrode; a fourth polysilicon electrode disposed on a second sidewall adjacent to the second polysilicon electrode; and a fourth capacitor dielectric layer disposed between the fourth polysilicon electrode and the second polysilicon electrode.

The invention relates to a method for producing a silicon electrode as an anode for a lithium ion battery, in which an active layer is deposited on a substrate, preferably copper, and then undergoes a rapid tempering, as well as an anode produced using same. The object of the invention of providing a method, which dispenses with the need for a vacuum section for depositing the active material, in particular silicon, for the production of anodes for lithium ion batteries, and thereby allows for an extremely cost-optimised production of almost pure silicon anodes for lithium ion batteries, is achieved in that the active layer is formed from a silicon and metal particle mixture, which is applied to the substrate in a dry process and stabilised in a controlled manner via the rapid tempering to form a semi-porous active layer and fixed to the substrate.

The invention discloses a discharge electrode, a discharge loop and a gas detector, the discharge electrode comprises an electrode body and a conductive wire; the electrode body is in a shaft rod shape; the conductive wire is arranged on the electrode body in a penetrating manner; and when the zirconium-platinum-silicon electrode is arranged on the electrode body in a penetrating manner, the discharge electrode is constructed into a PN electrode through the zirconium-platinum-silicon electrode. The discharge circuit comprises the discharge electrode. The gas detector comprises the discharge circuit. By using the zirconium platinum silicon electrode and cooperating with the filtering of the magnetic attraction piece, the rectification, filtering and voltage stabilization of the alternating current are realized, so that the alternating current is converted into the direct current to be supplied to the gas detector for use, the gas detector can be supplied with power through the direct current or the alternating current, the power utilization range is expanded, and the use is more convenient.

An electrostatic MEMS transducer includes a membrane and an actuator array. The actuator array includes a plurality of vertical parallel-plate actuator cells. Each vertical actuator cell comprises two silicon electrodes and a polysilicon electrode positioned between the two silicon electrodes. The actuator cells are configured to generate oscillation of the membrane responsive to an electrical signal.

This invention discloses an online electrochemical descaling system and method for cooling towers based on silicon carbide electrodes and a three-tank separation water tank, relating to the field of industrial circulating water treatment technology. The system includes an electrode unit, a control unit, a three-tank separation water tank, a sewage discharge unit, and circulating pipelines. The electrode unit uses conductive silicon carbide electrode sheets to form two sets of switchable polarity electrode groups. The control unit is driven by a constant current source and supports voltage threshold triggering polarity reversal. The separation water tank is divided into a three-tank structure by vertical partitions, allowing only the middle layer of clear liquid to enter the clear water zone. This invention fundamentally solves the problems of easy corrosion and short lifespan of traditional metal electrodes, achieving online self-cleaning of the electrodes and efficient isolation of deposits. It can be directly adapted to existing cooling tower double-sided packing layouts, achieving full-flow online treatment without the need for chemical reagent addition, resulting in low operating costs and no secondary pollution. It is suitable for circulating cooling water systems in various industries such as power, chemical, and central air conditioning.

To improve the performance of semiconductor devices. [Solution] The semiconductor chip CP has an n-type semiconductor layer NS1, an n-type semiconductor layer NS2 formed on the upper surface of the n-type semiconductor layer NS1, and an n-type semiconductor region NS3 formed within the n-type semiconductor layer NS2. A groove TR1 is formed within the n-type semiconductor region NS3, an insulating film CZ is formed on the upper surface of the n-type semiconductor layer NS1 including the inner surface of the groove TR1, and a polysilicon electrode PE is formed on the insulating film CZ so as to fill the groove TR1. A metal surface electrode HE is formed on the polysilicon electrode PE, and a metal back surface electrode BE is formed on the lower surface of the n-type semiconductor layer NS1. The n-type impurity concentration of the n-type semiconductor layer NS2 between the n-type semiconductor region NS3 and the n-type semiconductor layer NS1 is lower than the n-type impurity concentrations of the n-type semiconductor layer NS1 and the n-type semiconductor region NS3, respectively.

The present application relates to electrolytes for electrochemical cells having silicon-containing electrodes. Provided herein are electrolyte compositions for electrochemical cells including silicon-containing electrodes and electrochemical cells comprising the electrolyte compositions. The electrolyte compositions comprise a lithium salt, fluoroethylenecarbonate (FEC), a linear carbonate, vinylene carbonate, and a fluorosilane additive. The FEC and linear carbonate are present in the electrolyte composition in a ratio of about 1:3 v / v to about 1:9 v / v.

A device for transferring micro-components and a method of manufacturing the device are provided. The device includes a substrate, a metal wire, and a plurality of silicon electrodes. The metal wire is formed on a flat surface of the substrate and includes a plurality of electrode driving units. The silicon electrodes are formed on a side of the metal wire opposing to the substrate. Each silicon electrode corresponds to each electrode driving unit and is driven by the electrode driving unit to pick or release each micro-component. According to the present application, the device may electrostatically adsorb a massive amount of micro-components to achieve transferring the massive amount of the micro-components, dramatically improving a transfer efficiency.

The invention provides a silicon-based rechargeable battery based on hydrogen chemistry and a preparation method thereof, and belongs to the technical field of electrochemistry and rechargeable batteries, and the silicon-based rechargeable battery based on hydrogen chemistry comprises a positive electrode, a negative electrode, an electrolyte, a solid electrolyte and hydrogen filled into the silicon-based rechargeable battery. Wherein the positive electrode comprises a hydrogen electrode, and the hydrogen electrode is a gas diffusion layer containing an electrocatalytic active substance; the negative electrode comprises a silicon-based electrode; the silicon-based electrode is selected from any one of a nano silicon electrode, a silicon-carbon composite electrode, a porous silicon electrode, a silicon monoxide electrode, a silicon-iron alloy electrode and a silicon-nickel alloy electrode; the electrolyte comprises inorganic electrolyte on the positive electrode side and organic electrolyte on the negative electrode side; the solid electrolyte is used for separating the inorganic electrolyte from the organic electrolyte, and meanwhile, the solid electrolyte is used for realizing migration of charge carriers between the positive electrode and the negative electrode in the charging and discharging process.

The invention provides a process processing method for an out-of-plane capacitive micro-electromechanical accelerometer, and the method comprises the steps: S1, bonding a silicon electrode layer on the upper surface of a TSV layer, and carrying out the dry etching of the silicon electrode layer, and obtaining an independent silicon electrode and a sealing ring; preparing a bonding dielectric layer on the upper surface of the silicon electrode layer; s2, bonding a structural layer on the lower surface of the cover plate layer, processing a capacitor gap in the lower surface of the structural layer through wet etching, and then forming a seesaw structure through dry etching; s3, aligning the seesaw structure of the structural layer with the silicon electrode, and bonding the lower surface of the structural layer with the upper surface of the bonding dielectric layer to obtain a capacitor gap; and S4, metalizing the through hole of the TSV layer, and leading out an electric signal of the silicon electrode to the lower surface of the TSV layer. And z-axis accelerometer detection can be realized, and a solution is provided for design and manufacturing of a surface external speedometer.

According to the invention, the bonding strength between wafers in the semiconductor manufacturing process is improved through a simple structure. Provided is a vacuum chamber (14) for bonding semiconductor wafers (W1, W2) to each other, one using a silicon electrode (G1) and the other using a semiconductor wafer (W2) before bonding the wafers (W1, W2) facing each other; after the silicon electrode G1 and the semiconductor wafer W2 are processed for the first time, the silicon electrode G1 is replaced by the bonding wafer G2, and then the bonding wafer G2 and the semiconductor wafer W2 are processed for the second time. Then, the pair of wafers W1 and W2, which are opposite to each other, are bonded together by electrostatic force in a vacuum environment.

The application belongs to the technical field of lithium ion battery negative electrode materials, and particularly relates to a dynamic self-healing composite micron silicon electrode and a preparation method and application thereof. The method comprises the following steps: (1) micron silicon powder, carbon black and a binder are prepared into electrode slurry according to a certain proportion, are coated on a current collector, and are vacuum dried to obtain a micron silicon electrode; (2) the micron silicon electrode is placed in a magnetron sputtering device for magnetron sputtering, and a copper layer is sputtered on the micron silicon electrode; (3) gallium-based liquid metal is added dropwise on the surface of the micron silicon electrode with the sputtered copper layer, and then the micron silicon electrode is placed in hydrochloric acid vapor for reaction wetting of the gallium-based liquid metal on the surface of the electrode, to obtain the dynamic self-healing composite micron silicon electrode. The micron silicon electrode prepared by the application has a dynamic self-healing interface layer, and based on the fluidity and self-healing property of the liquid metal, the cracking of the micron silicon electrode in the cycle process can be realized, and the shedding of the active material is effectively prevented.

The application relates to the technical field of batteries, in particular to a negative electrode sheet, a preparation method thereof and a battery. The negative electrode sheet comprises a negative electrode current collector and a composite layer; the first negative electrode active material in the composite layer comprises lithium metal particles and a first SEI film coated on the surface of the lithium metal particles, and the first SEI film comprises a first functional layer; the second negative electrode active material in the composite layer comprises nano-silicon particles and a second SEI film coated on the surface of the nano-silicon particles, and the second SEI film comprises a second functional layer; the first functional layer and the second functional layer independently comprise an A substance and a lithium-containing compound, the A substance comprises a weak acid salt containing M and / or an organic salt containing M, wherein M is Zn and / or Mg. The negative electrode sheet can realize the rapid migration of lithium ions between the lithium metal negative electrode and the silicon electrode, and can inhibit the direct reduction of the lithium ions on the interface, thereby inhibiting the nucleation and growth kinetics of lithium dendrites and being beneficial to improving the cycle performance.

The invention discloses a nano-silicon material and a surface oxide removal method thereof, a lithium ion battery and application, and belongs to the technical field of lithium ion battery materials, the method comprises the following steps: pretreating a nano-silicon material containing a surface oxide layer, and dispersing the pretreated nano-silicon material and cellulose ether in a solvent, so that the cellulose ether is adsorbed on the particle surface of the nano-silicon material, particle agglomeration is destroyed through dual mechanisms of steric hindrance and electrostatic repulsion; removing a surface oxide layer and by-products of the nano silicon material through acid pickling; and washing and drying to obtain the nano silicon material. The method is simple in process and safe to operate, the oxygen content of the nano silicon material can be remarkably reduced to be lower than 5%, the conductivity and activity of a silicon electrode are improved, the high specific capacity of the silicon electrode is released from 400 mAh.g <-1 > to 3500 mAh.g <-1 >, the cycle stability of a battery is improved, and the method is suitable for large-scale preparation of a high-purity silicon negative electrode material.

To provide a thin film transistor which has excellent electrical characteristics and high reliability, and a display device using the thin film transistor as a switching element.SOLUTION: In a channel protected thin film transistor in which an oxide semiconductor is used for a channel formation region, an oxide semiconductor layer which is dehydrated or dehydrogenated by a heat treatment is used as an active layer, a crystal region composed of nanocrystals is included in a superficial portion in the channel formation region, and the rest portion is amorphous or is formed of a mixture of amorphous and microcrystals in which an amorphous region is dotted with microcrystals. By using an oxide semiconductor layer having such a structure, a change to an N-type caused by re-entry of moisture or elimination of oxygen to or from the superficial portion and generation of a parasitic channel can be prevented, and a contact resistance with source and drain electrodes can be reduced.SELECTED DRAWING: Figure 1

The invention belongs to the field of silicon materials and solid-state batteries, and particularly relates to a modified sandwich silicon electrode, preparation of the modified sandwich silicon electrode and application of the modified sandwich silicon electrode in a solid-state lithium battery, and the preparation method comprises the following steps: compounding a negative electrode material layer containing a silicon active material on a negative electrode current collector in advance; compounding modification liquid on the negative electrode material layer; then sequentially carrying out heat treatment and ultraviolet radiation treatment, and compounding a modified layer on the negative electrode material layer; the modified liquid comprises an acrylate monomer, a conductive lithium salt, an inorganic additive, an auxiliary agent shown in a formula 1 and an auxiliary agent shown in a formula 2; and then compounding a Li3MC16 material on the surface of the modified layer, and carrying out modification treatment under the conditions of the temperature of 50-100 DEG C and positive pressure to prepare the modified sandwich silicon electrode. The method provided by the invention is beneficial to fast charging and high and low temperature performance of the silicon negative electrode.

The present invention belongs to the field of solid-state batteries and specifically relates to a method for preparing a modified silicon anode. Nano-silicon material is placed in a modifying liquid A for a first modification treatment to obtain modified silicon particles; the modifying liquid A is a solution containing polypropylene carbonate; the modified silicon particles and a binder are slurried and then composited onto a negative electrode current collector to form a silicon anode layer on the negative electrode current collector to obtain a silicon anode; the silicon anode layer of the silicon anode is composited with a modifying liquid B, and then a second modification treatment is performed under light irradiation to obtain the modified silicon anode; the modifying liquid B comprises Formula 1#imgabs0#, Formula 2#imgabs1#, Formula 3#imgabs2#, and a lithium salt. The present invention also includes a silicon anode obtained by the preparation method and its application. The silicon anode described in the present invention can effectively improve its performance in a solid-state battery system, and can improve its long cycle life and performance in a solid-state battery system.