22 results about "Silicon electrode" patented technology

The invention belongs to the technical field of material chemistry, and particularly relates to a method for photo-initiation in-situ preparation of an integrated silicon solid electrolyte and application. The preparation method comprises the following steps: firstly, adding PEGDA and UPyMA into DMSO, and carrying out ultrasonic uniform dispersion; and adding a photoinitiator porphyrin COF and a coinitiator TEA, and removing water and oxygen in the solution by a bubbling method. Under the protection of argon, adding LiTFSI and stirring at room temperature to prepare a polymer solid electrolyte precursor solution; and dropwise adding the precursor solution on the surface of a silicon electrode, irradiating with an ultraviolet lamp, and drying after complete polymerization to obtain the silicon negative electrode-polymer integrated solid electrolyte. The synthesis mode is simple and convenient, the yield is high, the effect is good, the composition can effectively solve the problem of a solid-solid interface in a solid electrolyte, the volume expansion of nano silicon is relieved, the ionic conductivity and the transference number are improved, the stability of an electrode material is maintained, and the composition can be used for all-solid-state lithium metal batteries and all-solid-state silicon batteries.

This invention relates to the field of silicon wafer polishing equipment technology and discloses a micro-force controlled chemical mechanical polishing system for processing silicon electrode raw materials, including a grinding base and a polishing section. The polishing section includes a polishing seat assembled within the grinding base. The grinding base is equipped with a carrier ring for placing silicon wafers via a cantilever mounted on its top. A grinding pressure loading mechanism is assembled within the grinding base, and a driving mechanism is also assembled within the grinding base. This micro-force controlled chemical mechanical polishing system for processing silicon electrode raw materials effectively solves the problem in the prior art where the polishing slurry supply mechanism often uses an independent supply pipe to drip from the side or top of the polishing pad. The centrifugal force generated by the rotation of the polishing seat will throw the non-centrally dripping polishing slurry radially outward, resulting in insufficient polishing slurry coverage in the center of the polishing seat and excessive accumulation at the edges, forming an uneven liquid film with a gradually thickening outer edge on the surface, ultimately affecting the polishing quality of the silicon wafer.

The application discloses a three-dimensional trench silicon electrode detector and a preparation method thereof. The detector is composed of a plurality of detection units. The detection unit comprises a silicon dioxide protective layer, an outer electrode arranged on the silicon dioxide protective layer, a silicon base and a center electrode arranged on the silicon dioxide protective layer and in the outer electrode. The silicon base comprises a base part and a nested part. The nested part is embedded in the outer electrode and located on the base part. The center electrode and the nested part are filled with an insulator between the center electrode and the outer electrode and between the nested part and the outer electrode. An electrode contact aluminum layer is arranged on the top of the outer electrode, the center electrode and the insulator. An electrode contact port is arranged on the electrode contact aluminum layer of the outer electrode and the center electrode. The application solves the problem that the existing detector has a small light absorption coefficient, a narrow absorption spectrum and cannot fully absorb and utilize solar energy.

The invention relates to a method for producing a silicon electrode as an anode for a lithium ion battery, in which an active layer is deposited on a substrate, preferably copper, and then undergoes a rapid tempering, as well as an anode produced using same. The object of the invention of providing a method, which dispenses with the need for a vacuum section for depositing the active material, in particular silicon, for the production of anodes for lithium ion batteries, and thereby allows for an extremely cost-optimised production of almost pure silicon anodes for lithium ion batteries, is achieved in that the active layer is formed from a silicon and metal particle mixture, which is applied to the substrate in a dry process and stabilised in a controlled manner via the rapid tempering to form a semi-porous active layer and fixed to the substrate.

This invention discloses an online electrochemical descaling system and method for cooling towers based on silicon carbide electrodes and a three-tank separation water tank, relating to the field of industrial circulating water treatment technology. The system includes an electrode unit, a control unit, a three-tank separation water tank, a sewage discharge unit, and circulating pipelines. The electrode unit uses conductive silicon carbide electrode sheets to form two sets of switchable polarity electrode groups. The control unit is driven by a constant current source and supports voltage threshold triggering polarity reversal. The separation water tank is divided into a three-tank structure by vertical partitions, allowing only the middle layer of clear liquid to enter the clear water zone. This invention fundamentally solves the problems of easy corrosion and short lifespan of traditional metal electrodes, achieving online self-cleaning of the electrodes and efficient isolation of deposits. It can be directly adapted to existing cooling tower double-sided packing layouts, achieving full-flow online treatment without the need for chemical reagent addition, resulting in low operating costs and no secondary pollution. It is suitable for circulating cooling water systems in various industries such as power, chemical, and central air conditioning.

To improve the performance of semiconductor devices. [Solution] The semiconductor chip CP has an n-type semiconductor layer NS1, an n-type semiconductor layer NS2 formed on the upper surface of the n-type semiconductor layer NS1, and an n-type semiconductor region NS3 formed within the n-type semiconductor layer NS2. A groove TR1 is formed within the n-type semiconductor region NS3, an insulating film CZ is formed on the upper surface of the n-type semiconductor layer NS1 including the inner surface of the groove TR1, and a polysilicon electrode PE is formed on the insulating film CZ so as to fill the groove TR1. A metal surface electrode HE is formed on the polysilicon electrode PE, and a metal back surface electrode BE is formed on the lower surface of the n-type semiconductor layer NS1. The n-type impurity concentration of the n-type semiconductor layer NS2 between the n-type semiconductor region NS3 and the n-type semiconductor layer NS1 is lower than the n-type impurity concentrations of the n-type semiconductor layer NS1 and the n-type semiconductor region NS3, respectively.

The invention provides a silicon-based rechargeable battery based on hydrogen chemistry and a preparation method thereof, and belongs to the technical field of electrochemistry and rechargeable batteries, and the silicon-based rechargeable battery based on hydrogen chemistry comprises a positive electrode, a negative electrode, an electrolyte, a solid electrolyte and hydrogen filled into the silicon-based rechargeable battery. Wherein the positive electrode comprises a hydrogen electrode, and the hydrogen electrode is a gas diffusion layer containing an electrocatalytic active substance; the negative electrode comprises a silicon-based electrode; the silicon-based electrode is selected from any one of a nano silicon electrode, a silicon-carbon composite electrode, a porous silicon electrode, a silicon monoxide electrode, a silicon-iron alloy electrode and a silicon-nickel alloy electrode; the electrolyte comprises inorganic electrolyte on the positive electrode side and organic electrolyte on the negative electrode side; the solid electrolyte is used for separating the inorganic electrolyte from the organic electrolyte, and meanwhile, the solid electrolyte is used for realizing migration of charge carriers between the positive electrode and the negative electrode in the charging and discharging process.

The invention provides a process processing method for an out-of-plane capacitive micro-electromechanical accelerometer, and the method comprises the steps: S1, bonding a silicon electrode layer on the upper surface of a TSV layer, and carrying out the dry etching of the silicon electrode layer, and obtaining an independent silicon electrode and a sealing ring; preparing a bonding dielectric layer on the upper surface of the silicon electrode layer; s2, bonding a structural layer on the lower surface of the cover plate layer, processing a capacitor gap in the lower surface of the structural layer through wet etching, and then forming a seesaw structure through dry etching; s3, aligning the seesaw structure of the structural layer with the silicon electrode, and bonding the lower surface of the structural layer with the upper surface of the bonding dielectric layer to obtain a capacitor gap; and S4, metalizing the through hole of the TSV layer, and leading out an electric signal of the silicon electrode to the lower surface of the TSV layer. And z-axis accelerometer detection can be realized, and a solution is provided for design and manufacturing of a surface external speedometer.

The application belongs to the technical field of lithium ion battery negative electrode materials, and particularly relates to a dynamic self-healing composite micron silicon electrode and a preparation method and application thereof. The method comprises the following steps: (1) micron silicon powder, carbon black and a binder are prepared into electrode slurry according to a certain proportion, are coated on a current collector, and are vacuum dried to obtain a micron silicon electrode; (2) the micron silicon electrode is placed in a magnetron sputtering device for magnetron sputtering, and a copper layer is sputtered on the micron silicon electrode; (3) gallium-based liquid metal is added dropwise on the surface of the micron silicon electrode with the sputtered copper layer, and then the micron silicon electrode is placed in hydrochloric acid vapor for reaction wetting of the gallium-based liquid metal on the surface of the electrode, to obtain the dynamic self-healing composite micron silicon electrode. The micron silicon electrode prepared by the application has a dynamic self-healing interface layer, and based on the fluidity and self-healing property of the liquid metal, the cracking of the micron silicon electrode in the cycle process can be realized, and the shedding of the active material is effectively prevented.

The application relates to the technical field of batteries, in particular to a negative electrode sheet, a preparation method thereof and a battery. The negative electrode sheet comprises a negative electrode current collector and a composite layer; the first negative electrode active material in the composite layer comprises lithium metal particles and a first SEI film coated on the surface of the lithium metal particles, and the first SEI film comprises a first functional layer; the second negative electrode active material in the composite layer comprises nano-silicon particles and a second SEI film coated on the surface of the nano-silicon particles, and the second SEI film comprises a second functional layer; the first functional layer and the second functional layer independently comprise an A substance and a lithium-containing compound, the A substance comprises a weak acid salt containing M and / or an organic salt containing M, wherein M is Zn and / or Mg. The negative electrode sheet can realize the rapid migration of lithium ions between the lithium metal negative electrode and the silicon electrode, and can inhibit the direct reduction of the lithium ions on the interface, thereby inhibiting the nucleation and growth kinetics of lithium dendrites and being beneficial to improving the cycle performance.

The invention discloses a nano-silicon material and a surface oxide removal method thereof, a lithium ion battery and application, and belongs to the technical field of lithium ion battery materials, the method comprises the following steps: pretreating a nano-silicon material containing a surface oxide layer, and dispersing the pretreated nano-silicon material and cellulose ether in a solvent, so that the cellulose ether is adsorbed on the particle surface of the nano-silicon material, particle agglomeration is destroyed through dual mechanisms of steric hindrance and electrostatic repulsion; removing a surface oxide layer and by-products of the nano silicon material through acid pickling; and washing and drying to obtain the nano silicon material. The method is simple in process and safe to operate, the oxygen content of the nano silicon material can be remarkably reduced to be lower than 5%, the conductivity and activity of a silicon electrode are improved, the high specific capacity of the silicon electrode is released from 400 mAh.g <-1 > to 3500 mAh.g <-1 >, the cycle stability of a battery is improved, and the method is suitable for large-scale preparation of a high-purity silicon negative electrode material.

To improve bonding strength between wafers in a semiconductor manufacturing process by a simple configuration.SOLUTION: In a vacuum chamber 14 for performing plasma treatment to a wafer, before wafers facing each other are joined, silicon electrodes W1 are used for one of wafers G1 and W2, semiconductor wafer W2 is used for the other, first plasma treatment is performed to the silicon electrodes G1 and the semiconductor wafer W2, then the silicon electrodes G1 is changed to a bonded wafer G2, and second plasma treatment is performed to the bonded wafer G2 and the semiconductor wafer. W2, thereafter, the pair of wafers W1 and W2 facing each other are bonded to each other under a vacuum condition.SELECTED DRAWING: Figure 2

An electrochemical cell may include a first electrode that includes a positive electroactive material, a second electrode that includes a negative electroactive material and a polyacrylate binder, and a separating layer disposed between the first and second electrodes. The polyacrylate binder has a molecular weight greater than or equal to about 250,000 mol / g to less than or equal to about 500,000 mol / g. The second electrode is prepared by disposing an electrode forming slurry having a temperature greater than or equal to about 4° C. to less than or equal to about 15° C. one or near a surface of a current collector. The electrode forming slurry includes the negative electroactive material and the polyacrylate binder. The negative electroactive material can be a silicon-containing material.

The present application discloses a TOPCON tandem cell and a preparation method therefor. The TOPCON tandem cell comprises: a crystalline silicon bottom cell (1) and a perovskite top cell (2) disposed on the crystalline silicon bottom cell (1), wherein the crystalline silicon bottom cell (1) comprises, from bottom to top, a crystalline silicon electrode layer (11), a P-type base doped layer (12), a base bottom passivation layer (13), a silicon substrate (14), a base surface passivation layer (15), an N-type base doped layer (16), a stress buffer layer (17) and a tunneling layer (18); and the perovskite top cell (2) comprises: a hole transport layer (21), a perovskite absorber layer (22), a perovskite passivation layer (23), an electron transport layer (24), a perovskite buffer layer (25), a perovskite electrode layer (26) and an anti-reflection layer (27).

The application provides an active depletion device based on potential clamping bias coupling and a manufacturing method, which comprises a first conductive type substrate, a second conductive type drift region, a resistive polysilicon field plate, an MIS array, first and second conductive type well regions and heavily doped regions located on both sides of the drift region, a control gate polysilicon electrode located on the surface of the device, a field oxide layer and an interlayer dielectric. The structure combines the MIS array and the resistive field plate, clamps the MIS array by using the uniform potential distribution on the resistive field plate and the bias coupling between the resistive field plate and the MIS array, further optimizes the potential distribution of the MIS array, and thus brings better device performance and wider design space.

The invention relates to the technical field of etching equipment, and discloses silicon electrode etching equipment, and the equipment comprises a bearing assembly which is used for bearing a silicon electrode; the etching assembly comprises a plurality of groove bodies which are sequentially arranged at intervals in the first direction, the groove bodies are upwards provided with openings, the groove bodies have a first depth in the second direction, and a cleaning solution and an etching solution are placed in the groove bodies respectively; the driving assembly is in transmission connection with the bearing assembly; the driving assembly comprises a first driving component, and the first driving component is used for driving the bearing assembly to move in the first direction and sequentially pass through the groove bodies. The second driving component is used for driving the bearing assembly to move in the second direction so as to enter or leave the groove body. The invention provides etching equipment and an etching method for mechanically driving a silicon electrode to move.

The application relates to the technical field of silicon electrode production, and discloses a silicon wafer cutting device and a cutting method for silicon electrode production. The device comprises a seat body, a crystal holder fixing frame is slidably arranged on the seat body, a driving source for driving the crystal holder fixing frame to ascend and descend is arranged on the seat body, and the crystal holder fixing frame is detachably arranged on the crystal holder fixing frame. A wire roller, a collecting box and a liquid box are arranged on the seat body. The liquid box is fixed to the seat body, a liquid outlet of the liquid box is rotatably arranged with a flow guide plate, and the flow guide plate is turned over by the transmission assembly during the descending of the crystal holder fixing frame. When the silicon ingot is partially cut, the flow guide plate is turned over upwards, the cooling liquid can flow out of the center of the silicon ingot and the cutting area, the flow guide plate can be automatically adjusted to turn over upwards after the cutting is performed for a period of time, the flow direction of the cooling liquid is adjusted, the cooling liquid can cool the center of the silicon ingot and the cutting area, and the problem that micro-cracks are formed at the grain boundaries or defects due to uneven temperature distribution in the silicon ingot is solved.

This invention discloses a pre-cleaning method for etching micropores of semiconductor silicon electrodes, comprising the following steps: 1) immersing the silicon electrode to be cleaned in an alkaline degreasing solution; 2) rinsing the micropores of the silicon electrode with pure water; 3) immersing the rinsed silicon electrode in pure water for ultrasonic cleaning; and 4) immersing the treated silicon electrode in a hydrogen peroxide solution. This invention effectively removes surface particles and contaminants from the silicon electrode surface by immersing it in an alkaline degreasing solution, rinsing it with pure water, and ultrasonic cleaning. Finally, immersing the silicon electrode in a hydrogen peroxide solution allows the hydrogen peroxide solution to release oxygen in the alkaline solution. This released oxygen can penetrate into the micropores of the silicon electrode with a diameter of 0.2-0.5 mm, rapidly and effectively oxidizing contaminants inside the micropores. This ensures a uniform reaction during subsequent etching, achieving consistent etching conditions inside and outside the pores and preventing trailing color differences.

The invention relates to the field of solar cells, and discloses a solar cell, a preparation method thereof and a photovoltaic module. Comprising a semi-finished solar cell product and an electrode structure arranged on the semi-finished solar cell product, the semi-finished solar cell product is made of silicon, and the electrode structure comprises a contact layer, and a diffusion suppression layer and a conductive layer which are sequentially laminated on the contact layer; the material of the conductive layer comprises a first metal, the material of the diffusion inhibition layer comprises an alloy formed by the first metal and a second metal, the material of the contact layer comprises a third metal, the electronegativity difference value of the first metal and the second metal is greater than or equal to 0.2, the first metal comprises at least one of copper and aluminum, and the conductivity of the third metal is greater than that of the first metal. The solid solubility of the third metal in the silicon is smaller than that of the first metal. The electrode structure not only can effectively restrain and avoid the reaction between the first metal and silicon, but also can ensure the contact effect between the electrode structure and the semi-finished solar cell product.

The invention discloses etching liquid for a silicon electrode with the resistivity larger than 1 omega.cm, and belongs to the technical field of semiconductor manufacturing. The etching liquid comprises the following components in percentage by mass: 20%-70% of sulfuric acid, 1%-20% of an oxidant, 1%-20% of fluoride, 0.1%-1% of an additive and the balance of deionized water, and the sum of the mass fractions of the components is 100%. The sulfuric acid, the oxidizing agent and the fluoride can be etched at a stable rate; the surfactant and the defoaming agent can reduce incomplete or non-uniform etching caused by the fact that etching liquid cannot be in complete contact with the surface of a silicon electrode due to a large number of generated bubbles in the reaction process; the solubilizer can improve the solubility of each additive in the etching liquid, so that the etching liquid is transparent and clear, has wettability and can improve the etching uniformity; and the stabilizer and the surfactant prolong the service life of the etching solution. The etching liquid can quickly and stably etch a silicon electrode product, the surface roughness of the product is almost unchanged before and after etching, and the surface is fine and smooth and has no color difference or bubble spots.