435results about "Laser active region structure" patented technology

Tailored doping of barrier layers enables balancing of the radiative recombination among the multiple-quantum-wells in III-Nitride light-emitting diodes. This tailored doping enables more symmetric carrier transport and uniform carrier distribution which help to reduce electron leakage and thus reduce the efficiency droop in high-power III-Nitride LEDs. Mitigation of the efficiency droop in III-Nitride LEDs may enable the pervasive market penetration of solid-state-lighting technologies in high-power lighting and illumination.

The invention provides a semiconductor laser chip and a preparation method, and belongs to the technical field of semiconductor laser chip preparation, and the semiconductor laser chip comprises an N-surface metal, a substrate, an N-type limiting layer, an N-type waveguide layer, a tensile strain quantum well, a P-type waveguide layer, a P-type limiting layer, an ohmic contact layer, a SiO2 insulating layer, a first P-surface metal layer and a second P-surface metal layer which are sequentially arranged from bottom to top. Waveguide grooves are symmetrically formed in the two sides of the ohmic contact layer and penetrate through the ohmic contact layer, the bottoms of the grooves sink to the P-type limiting layer but do not exceed the P-type limiting layer, and a ridge waveguide is formed between the two grooves. The depth of the waveguide groove is of a stepped structure in the longitudinal direction, the depth of the area close to the cavity surface is increased to the N-type waveguide layer, the area completely covers the SiO2 insulating layer and the first layer of P-surface metal, but no second layer of P-surface metal exists, and the longitudinal stepped structure is formed. Through the design of the tensile strain quantum well and the stepped waveguide groove, cavity surface tensile strain release is realized, light absorption is reduced, and the reliability and the service life of the chip are improved.

The invention provides a micro-disk structure semiconductor laser and a preparation method, and belongs to the technical field of semiconductor lasers. The high-concentration Zn-doped p-GaAs multi-quantum-well multi-quantum-well light-emitting diode comprises a SiO2 barrier layer, an n-GaAs substrate with the thickness of 100 microns, an n-GaAs contact layer with the thickness of 100 nm, a Si-doped n-AlGaInP limiting layer with the thickness of 200 nm, an n-AlGaInP waveguide layer with the thickness of 400 nm, a first GaInP / AlGaInP multi-quantum-well layer, a GaAs barrier layer, a second GaInP / AlGaInP multi-quantum-well layer, an undoped p-AlGaAs waveguide layer with the thickness of 150 nm, a Zn-doped p-AlGaInP limiting layer with the thickness of 200 nm and a high-concentration Zn-doped p-GaAs contact layer with the thickness of 100 nm. By controlling the thickness and the doping concentration of each layer, efficient limitation and injection of carriers are realized; due to the design of the double multi-quantum well layer and the barrier layer, the device can realize stable lasing in two wavebands of 808nm and 650nm; the undoped waveguide layer effectively reduces the optical loss, prolongs the photon lifetime, and improves the laser output efficiency. And the quantum efficiency and the temperature stability of the device are improved.

A laser diode includes an active region, confinement layers, and cladding layers. The active region includes one or more active layers that each exert a first strain in a first direction and one or more strain compensating layer that each exert a second strain in a second direction that is opposite the first direction. The confinement layers bound the active region. The cladding layers bound the confinement layers. In some embodiments, each active layer comprises InAs quantum dots in a InrGa1-rAs quantum well, where 0≤r≤1; and each strain compensating layer comprises a GaAs1-sPs layer, where 0<s≤1. The confinement layers may each comprise a (AlzGa1-z)wIn1-wP layer, where 0<w<1 and 0≤z<1. The cladding layers may each comprise a (AlyGa1-y)xIn1-xP layer, where 0<x<1 and 0≤y<1.

The invention provides a semiconductor laser and a preparation method thereof. The preparation method comprises the following steps: forming a lower limiting layer on one side of a semiconductor substrate layer along a first direction; a ridge-shaped structure is formed on the side, away from the semiconductor substrate layer, of a part of the lower limiting layer, the ridge-shaped structure comprises a lower waveguide layer, an active layer, an upper waveguide layer, a grating layer and a cover layer which are sequentially stacked in the first direction, and the cover layer is located on the side, away from the upper waveguide layer, of the grating layer; an insulating epitaxial layer is formed on the side, away from the semiconductor substrate layer, of the lower limiting layer, the insulating epitaxial layer is located on the side, away from the semiconductor substrate layer, of the ridge-shaped structure and on the two sides, in the slow axis direction, of the ridge-shaped structure, and the thermal conductivity of the insulating epitaxial layer is larger than that of the active layer; an opening is formed in the insulating epitaxial layer, the opening exposes the cover layer, and the size of the opening in the slow axis direction is larger than that of the ridge-shaped structure in the slow axis direction; an upper confinement layer is formed in the opening.

Systems and methods are provided for patterned embedding on narrow stripe single mode transverse lasers. An example narrow stripe optical emitter device may include an active region containing semiconductor material, a first embedding region located on a first end of the narrow stripe optical emitter device and containing a first embedding material, and a second embedding region located on a second end of the narrow stripe optical emitter device and containing a second embedding material. The active region may include a ridge running between the first end and the second end of the narrow stripe optical emitter device. The first embedding material may be different from the second embedding material with respect to one or more characteristics. The one or more characteristics may include compressive strain related parameters and / or attributes.

Systems and methods are provided for refractive index engineering for brightness enhancement and kink suppression in optical emitter devices. An example optical emitter device may include a first region that includes a first semiconductor material, an active region located on the first region, with the active region including a pumped active region between a front end and a back end of the optical emitter device, and a plurality of loss structures arranged along at least a portion of at least one side of the pumped active region. The plurality of loss structures may be arranged between the front end and the back end of the optical emitter device. The plurality of loss structures may include two or more continuous etched lines. The plurality of loss structures may include two or more discontinuous etched features.

A quantum-cascade laser element includes: a semiconductor substrate; a semiconductor mesa formed on the semiconductor substrate to include an active layer having a quantum-cascade structure and to extend along a light waveguide direction; an embedding layer formed to interpose the semiconductor mesa along a width direction of the semiconductor substrate; a cladding layer formed over the semiconductor mesa and over the embedding layer; and a metal layer formed on the cladding layer. A pair of groove portions extending along the light waveguide direction are formed in a surface on an opposite side of the cladding layer from the semiconductor substrate. The pair of groove portions are disposed in two respective outer regions when the cladding layer is equally divided into four regions in the width direction of the semiconductor substrate. The metal layer enters the pair of groove portions.

The disclosure provides a laser, a preparation method of the laser and an optical module, and relates to the technical field of optical elements, so as to meet the demand of the optical module for high-power lasers. The laser comprises the following steps: growing an etching auxiliary layer on the surface of a wafer body of the laser, the longitudinal etching rate of the wafer body is greater than the transverse etching rate of the wafer body, the transverse etching rate of the etching auxiliary layer is greater than the transverse etching rate of the wafer body, and the wafer body comprises a quantum well layer; forming a mask layer above the etching auxiliary layer, and pre-treating the mask layer to form a BH pattern; etching the BH pattern, so that the top of the wafer body is etched into a BH mesa, the etching depth is below the quantum well layer, and the etching depth is below the quantum well layer; growing a current blocking layer on both sides of the BH mesa; removing the mask layer and the etching auxiliary layer; and forming a P-InP layer on the top of the BH mesa and the current blocking layer.

A semiconductor laser device includes a first metamaterial element, a semiconductor substrate having a main surface, and a multijunction active region arranged over the main surface of the semiconductor substrate between the first metamaterial element and the semiconductor substrate. The multijunction active region includes a plurality of active regions each comprising a multiple-quantum-well (MQWs), and a plurality of tunnel junction layers providing electrical coupling and located between neighboring active regions along a vertical direction perpendicular to the main surface of the semiconductor substrate.

Provided is a a semiconductor laser module, comprising, from bottom to top, a substrate, a lower limiting layer, a lower waveguide layer, an active layer, an upper waveguide layer, an electron blocking layer, and an upper limiting layer. The active layer satisfies at least one of that a content ratio of an element Al to an element H satisfies a first preset proportion distribution, a content ratio of an element In to the element H satisfies a second preset proportion distribution, a content ratio of an element Si to the element H satisfies a third preset proportion distribution, a content ratio of an element Mg to the element H satisfies a fourth preset proportion distribution, and a content ratio of an element C to an element O satisfies a fifth preset proportion distribution.

The invention discloses a multi-cycle laminated Si-based InAs / GaAs quantum dot array structure and a preparation method thereof. The multi-cycle laminated Si-based InAs / GaAs quantum dot array structure comprises a Si substrate; the SiO2 mask layer covers the Si substrate, and the SiO2 mask layer is provided with a circular hole array which is arranged in a matrix and is used for exposing a Si substrate area below the SiO2 mask layer; a GaAs nanowire buffer layer and a plurality of periodically stacked InAs / GaAs vertical coupling quantum dot units are sequentially grown on the Si substrate exposed in each circular hole from bottom to top; each unit comprises a GaAs nanowire layer, an InAs quantum dot layer, an In < x > Ga < 1-x > As cover layer and a GaAs cover layer which are sequentially stacked from bottom to top; and the epitaxial structure also comprises an AlyGa1-yAs cladding layer which coats the side surfaces of all the epitaxial layers in the circular hole. A plurality of periodically stacked InAs / GaAs vertical coupling quantum dot units constructed by the invention effectively inhibit the lateral diffusion of In atoms, and solve the problem of blue shift of light-emitting wavelength; the light-emitting wavelength can be accurately regulated and controlled to a 1.3 [mu] m communication wave band.

The invention relates to a method for producing at least one semiconductor laser. The method comprises: providing a semiconductor layer sequence having at least one ridge waveguide and a widened region, wherein the main direction of extension of the widened region runs transversely or perpendicularly with respect to the main direction of extension of the ridge waveguide; and forming at least one main structure of the semiconductor laser from the widened region, wherein the main structure is connected to the ridge waveguide and comprises a decoupling facet of the semiconductor laser. The main structure is stepped and / or at least one auxiliary structure is formed from the widened region, which auxiliary structure is laterally spaced from the main structure. The invention also relates to a semiconductor laser.

A vertical-cavity surface-emitting laser (VCSEL) includes a substrate, a first reflector structure formed above a first surface of the substrate, and a second reflector structure formed above the first surface of the substrate. Furthermore, a multi-junction active region is formed above the first surface of the substrate between the first reflector structure and the second reflector structure. The multi-junction active region includes multiple quantum well (MQW) regions and multiple oxide layers, each of which includes a peripheral region and an aperture region. The peripheral region surrounds the aperture region. A stress field of at least 2 gigapascals is achieved at the edge between the peripheral region and the aperture region.

The invention relates to the technical field of semiconductor devices, in particular to a novel electric pump AlGaN-based deep ultraviolet laser diode and a preparation method thereof. The structure comprises a stacking structure, a passivation layer, an n-type metal electrode layer and a p-type metal electrode layer, a substrate, a template layer, a bottom DBR layer, a step-shaped n-type AlGaN layer, a micro-cavity LED active region layer, a p-type AlGaN layer, a step-shaped p-type AlGaN contact layer, a top DBR layer, a lower waveguide layer, an LD multi-quantum well layer and an upper waveguide layer are stacked on the stacking structure in sequence. The ridge surface width of the p-type AlGaN contact layer is greater than or equal to 100 microns; the passivation layer covers the surface and the side wall of the stacked structure, and electrode layer growth channels are formed in the step surfaces of the n-type AlGaN layer and the p-type AlGaN contact layer respectively; and the n-type metal electrode layer and the p-type metal electrode layer respectively penetrate through the corresponding electrode layer growth channels. The advantages are that the wide ridge design improves the light output power, the performance is excellent, and the etching damage is reduced.

The application discloses a kind of high-power high-speed direct modulation quantum dot laser and preparation method thereof, N-type GaAs substrate is sent into MBE chamber to remove the surface oxidation layer, N-type GaAs contact layer is sequentially grown on the N-type GaAs substrate of surface oxidation layer removal, N-type AlGaAs restriction layer, first undoped GaAs waveguide layer, multilayer quantum dot active region, second undoped GaAs waveguide layer, P-type AlGaAs restriction layer, P-type GaAs contact layer, to obtain high-power high-speed direct modulation quantum dot laser from this. The method greatly improves the number of quantum dot layers by precisely controlling the growth conditions of quantum dots and the thickness of the spacer layer, while controlling the thickness of the quantum dot active region, thereby increasing the differential gain of quantum dots, carrier injection efficiency and greatly improving the direct modulation rate and light output power of quantum dot laser.

The techniques described herein relate to a transistor, including a substrate including SiC-4H, MgO, or AlGaO3; an epitaxial channel layer on the substrate, and a gate layer on the epitaxial channel layer. The epitaxial channel layer can include Ga2O3 with a first bandgap, wherein the Ga2O3 is: α-Ga2O3 with a hexagonal or trigonal crystal symmetry; κ-Ga2O3 with an orthorhombic crystal symmetry; or γ-Ga2O3 with a cubic crystal symmetry. The gate layer can include an oxide material with a second bandgap, where the second bandgap is wider than the first bandgap. The transistor can also include electrical contacts including: a source electrical contact coupled to the epitaxial channel layer; a drain electrical contact coupled to the epitaxial channel layer; and a gate electrical contact coupled to the gate layer.

A semiconductor light-emitting structure includes a semiconductor substrate layer, a first limiting layer, a first waveguide layer, an active layer, a second waveguide layer, and a second limiting layer stacked in sequence. The active layer comprises a first superlattice active layer and a second superlattice active layer stacked in sequence, and the second superlattice active layer is located on a side of the first superlattice active layer away from the first waveguide layer. The semiconductor light-emitting structure further includes an insertion layer disposed between the second superlattice active layer and the first superlattice active layer. A refractive index of the insertion layer is less than an effective refractive index of the first superlattice active layer and less than an effective refractive index of the second superlattice active layer.

Provided is a surface emitting laser capable of suppressing complication of a structure and capable of controlling a polarization direction.The surface emitting laser according to the present technology includes a resonator including a first structure and a second structure stacked on each other and an active layer disposed between the first and second structures, and the first structure and / or the second structure is provided with a stress application structure that applies a stress that distorts the active layer in an in-plane direction to the active layer. According to the surface emitting laser of the present technology, it is possible to provide the surface emitting laser capable of suppressing complication of a structure and capable of controlling a polarization direction.

The invention provides a semiconductor laser element with improved service life. This semiconductor laser element is provided with: a first semiconductor layer which is a group III-V compound semiconductor layer containing at least As as a group V element; a second semiconductor layer on the first conductive side, which is a group III-V compound semiconductor layer containing at least P as a group V element, and which is disposed on the first semiconductor layer; a second conductive-side third semiconductor layer disposed on the second semiconductor layer; an active layer disposed between the second semiconductor layer and the third semiconductor layer; a window structure formed across the third semiconductor layer, the active layer, the second semiconductor layer, and the first semiconductor layer; a defect layer having a group III element of the first semiconductor layer and a group III element of the second semiconductor layer between the first semiconductor layer and the second semiconductor layer and including a defect in a region formed in the window structure; and an end surface that includes a defect layer that does not overlap the near-field pattern of the laser light on the end surface, or that overlaps only at the edge of the near-field pattern on the end surface, and that emits the laser light.

The invention provides a distributed photonic crystal semiconductor laser and a design method thereof, and is applied to the field of semiconductor lasers. The semiconductor laser comprises a substrate, an N-type limiting layer, a distributed photonic crystal layer, an N-type waveguide layer, an active layer, a P-type waveguide layer and a P-type limiting layer which are sequentially stacked from bottom to top, wherein the distributed photonic crystal layer comprises high-refractive-index layers and low-refractive-index layers which are alternately stacked, the thickness distribution of the photonic crystal layer is completely non-periodic, and the thickness of each refractive-index layer can be any value and does not follow a fixed period or uniform thickness constraint any more. Through the structure and the design method thereof, the far-field energy divergence angle of the semiconductor laser can be effectively reduced.

Apparatuses, methods, and systems for a modulated laser are disclosed. The modulated laser includes a substrate including a plurality of laser segments, a first laser segment comprising a DC electrode, a second laser segment comprising an AC electrode, an isolation barrier formed between the first laser segment and the second laser segment, and a modulated laser cavity spanning from a rear face to a front face of the modulated laser inclusive of the plurality of laser segments, wherein a primary injection current supporting stimulated emission at a desired optical output power out of the front face of the modulated laser is generated when a DC bias is applied to the DC electrode, and wherein a carrier signal of the modulated laser is modulated when an AC signal is applied to the AC electrode, wherein the AC bias is independent of the DC bias.

Semiconductor laser architectures that provide weak index guiding of interband cascade lasers (ICLs) processed on a native III-V substrate and of ICLs grown on silicon or integrated on silicon by heterogeneous bonding. Weak index guiding of a ridge waveguide semiconductor laser can enhance the stability of lasing in the fundamental lateral mode, so as to allow a wider ridge to maintain stable single-lateral-mode operation.

The application provides a strain compensation type quantum well material for an EEL (edge emitting laser) and a preparation method thereof, and belongs to the technical field of semiconductor optoelectronic devices. The material comprises a substrate, a lower limiting layer, a lower waveguide layer, a multi-quantum well active region, a strain compensation shell layer, an upper waveguide layer and an upper limiting layer. The multi-quantum well active region is formed by alternately growing InGaAs quantum well layers with compressive strain and AlGaInP barrier layers with tensile strain, so that strain self-compensation is achieved; the strain compensation shell layer adopts an Al component gradient change structure, so that strain accumulation and quantum confinement Stark effect are further inhibited. The preparation method adopts processes such as molecular beam epitaxy, temperature oscillation, dynamic beam current modulation and multi-layer in-situ annealing, so that the material quality and interface flatness are improved. The application effectively improves the temperature stability, output power and service life of the device, and is suitable for optoelectronic devices such as 905 nm band lasers.

This invention discloses an antimony compound multi-wavelength laser material, its preparation method, and its applications. It relates to the field of semiconductor laser technology and solves the problems of existing antimony compound-based semiconductor laser materials, such as difficulty in achieving multi-wavelength laser emission through single epitaxial growth, and the complex epitaxial processes, limited interlayer interface quality, and insufficient precision in composition control of existing multi-wavelength laser materials. The antimony compound multi-wavelength laser material provided by this invention comprises, from bottom to top, a substrate, a monolayer of graphene, a buffer layer, a lower confinement layer, a lower waveguide layer, a dielectric layer, a quantum well structure, an upper waveguide layer, an upper confinement layer, and a capping layer; wherein the quantum well structure includes In… x3 Ga 1‑x3 As y3 Sb 1‑y3 And Al x4 Ga 1‑ x4 As y4 Sb 1‑y4 Laser materials can be used to fabricate mid-infrared semiconductor lasers, achieving selective epitaxial growth, multi-channel spectral acquisition, and broadband coverage through single-epitaxy and controlled photolithography patterns.

The invention relates to a photonic chip (10) having a heterogeneous III-V semiconductor structure on a second semiconductor comprising, in a stacking direction (Δ): a waveguide (11) made of a first III-V semiconductor material, referred to as the lll-V waveguide, comprising a first confinement layer (110), an active layer (111) and a second confinement layer (112), a waveguide (12) made of a second semiconductor material, referred to as the SC waveguide, comprising a layer (120) of the second semiconductor material. The first confinement layer (110) comprising a first portion (110a) on top of the active layer (111) and at least one extension (110b) extending laterally beyond the active layer (111), the extension (110b) having a thickness (Eb) in the stacking direction that is greater than that (Ea) of the first portion (110a) so as to define an electrical contact face (116) located before the first portion (110a) in the stacking direction (Δ).

Systems and methods for sensing vibrational absorption induced photothermal effect via a visible light source. A Mid-infrared photothermal probe (MI-PTP, or MIP) approach achieves 10 mM detection sensitivity and sub-micron lateral spatial resolution. Such performance exceeds the diffraction limit of infrared microscopy and allows label-free three-dimensional chemical imaging of live cells and organisms. Distributions of endogenous lipid and exogenous drug inside single cells can be visualized. MIP imaging technology may enable applications from monitoring metabolic activities to high-resolution mapping of drug molecules in living systems, which are beyond the reach of current infrared microscopy.

The invention relates to a quantum cascade laser emitting a polarized TM optical mode with a wavelength between 3 and 15 µm, comprising an amplifying medium and a main waveguide. The latter includes a coupling section in contact with the amplifying medium, comprising a diffraction grating (DFB). The coupling section has a width greater than or equal to a minimum width from which an antisymmetric supermode propagating in a laser guidance structure comprising the amplifying medium and the main waveguide has a confinement factor in an active region of the amplifying medium strictly greater than those of the optical modes capable of being guided by the guidance structure. The main waveguide comprises a core based on atoms from column IVA of the periodic table of elements and a confinement subshell of SiN or a chalcogenide. (See Figure 1A for the abstract.)

A light-emitting device includes: a first semiconductor layer having a first electric conductivity type; a second semiconductor layer provided between the first semiconductor layer and a second electrode and having a second electric conductivity type; a light-emitting layer provided between the first semiconductor layer and the second semiconductor layer; an insulating layer provided along a side surface of the first semiconductor layer; and a metal layer provided in contact with the insulating layer and along the side surface of the first semiconductor layer and that reflects light outputted from the first electrode side. The metal layer includes a first end in a first direction directed from the light-emitting layer toward the first semiconductor layer. The first semiconductor layer includes a second end in the first direction. In the first direction, a position of the first end is equal to or different from a position of the second end.

A method of Selective Area Epitaxy (SAE) on a semiconductor wafer is disclosed. A dielectric mask is deposited on the wafer surface to define an opening for epitaxial growth. The mask includes a zigzag edge formed by successive straight facets oriented to avoid crystallographic directions associated with unintentional growth enhancement. During SAE, a semiconductor layer is grown in the opening such that edge-growth enhancement at the zigzag edge is suppressed relative to straight edges aligned with [011] or [0 11] directions. By replacing straight mask edges with zigzag geometry, fragile linear overgrowth is avoided, reducing particulate contamination and improving device reliability. The zigzag edge may be tailored by pitch, amplitude, or facet orientation, including angles such as 34°, 56°, 124°, or 146° relative to [011]. The method is applicable to III-V materials, including InP-based photonic integrated circuits, lasers, modulators, and amplifiers.