1431results about "Laser active region structure" patented technology

Tailored doping of barrier layers enables balancing of the radiative recombination among the multiple-quantum-wells in III-Nitride light-emitting diodes. This tailored doping enables more symmetric carrier transport and uniform carrier distribution which help to reduce electron leakage and thus reduce the efficiency droop in high-power III-Nitride LEDs. Mitigation of the efficiency droop in III-Nitride LEDs may enable the pervasive market penetration of solid-state-lighting technologies in high-power lighting and illumination.

The invention provides a tunable micro-nano laser based on a perovskite phase change material and a preparation method thereof, and belongs to the technical field of micro-nano photoelectron, the tunable micro-nano laser comprises a substrate, and a distributed Bragg reflector, a gain dielectric layer and a reflector which are sequentially arranged on the substrate from bottom to top; wherein the gain medium is a perovskite material with a crystal phase transition characteristic. The substrate is made of a material which is transparent or low in loss to pump light and emitted light; the distributed Bragg reflector is formed by alternately arranging high-refractive-index layers and low-refractive-index layers; the gain dielectric layer is a perovskite thin film layer with a crystal phase transition characteristic, and a perovskite material has a spectrum tuning function in the laser resonant cavity; the reflecting mirror is composed of a metal film. According to the invention, the perovskite material is used as a gain medium and a phase change material at the same time, the wide-range tuning of laser wavelength is realized, and the tuning range can reach several nanometers or even wider; the energy utilization efficiency can be improved, the stability is high, and the method is suitable for various types of tunable micro-nano laser applications.

The invention discloses a distributed feedback laser and a preparation method thereof, and relates to the field of lasers. The preparation method of the distributed feedback laser comprises the following steps: forming a lower limiting layer, a lower waveguide layer, an active layer, an upper waveguide layer, an upper limiting layer, a grating layer, a grating buried layer, a corrosion stop layer, an InP cladding, a barrier gradient layer, a contact layer and a sacrificial layer on a substrate, wherein the sacrificial layer comprises an InP layer and an InGaAs layer which are stacked in sequence; etching to form a ridge waveguide structure; forming an insulating layer; removing the insulating layer in a preset area on the ridge waveguide structure to expose the sacrificial layer; wherein the side wall of the InGaAs layer is completely exposed, and the side wall of the InP layer is partially exposed; and etching to remove the InGaAs layer and the InP layer to form an upper electrode layer and a lower electrode layer. According to the invention, the reliability and the electro-optical conversion efficiency of the distributed feedback laser can be improved.

The present disclosure provides a semiconductor green laser. The semiconductor green laser, from bottom to top, comprising a substrate, a lower limiting layer, a lower waveguide layer, an active layer, an upper waveguide layer, and an upper limiting layer. The active layer is a quantum well composed of well layers and barrier layers. Each of the well layers includes any one of AlInGaN, AlInN, AlGaN, AlN, InN, InGaN, and GaN, or any combination thereof. Each of the barrier layers includes any one of AlInGaN, AlInN, AlGaN, AlN, InN, InGaN, and GaN, or any combination thereof. An electron effective mass of each of the well layers is less than an electron effective mass of each of the barrier layers. A spontaneous polarization coefficient of each of the well layers is less than a spontaneous polarization coefficient of each of the barrier layers.

The laser module includes a QCL element, a MEMS diffraction grating, a lens holder holding a lens disposed between the QCL element and the MEMS diffraction grating, a package, an electrode terminal disposed along an inner wall surface of the package, and a wire for electrically connecting the electrode terminal and a coil. The top wall of the package faces the bottom wall of the package in a direction orthogonal to the optical axis direction of the lens. The MEMS diffraction grating includes an electrode pad electrically connected to the coil. The electrode pad is connected to the electrode terminal via the wire. A height position of the electrode pad with respect to the bottom wall is equal to or higher than a height position of the electrode terminal with respect to the bottom wall.

Provided is a semiconductor laser and a display device thereof. The semiconductor laser includes a first semiconductor layer, a second semiconductor layer, and an active layer located therebetween; a first waveguide layer is disposed between the first semiconductor layer and the active layer, and a second waveguide layer is disposed between the second semiconductor layer and the active layer; an electron blocking layer is disposed between the second waveguide layer and the second semiconductor layer; the electron blocking layer includes at least a part of a P-type doped layer on a side close to the second semiconductor layer, in which a composition of the P-type doped layer is greater than 1E19−3; and a P-type doping concentration of the side of the electron blocking layer close to the second semiconductor layer is higher than a P-type doping concentration of the electron blocking layer away from the second semiconductor layer.

The invention relates to the technical field of semiconductor lasers, in particular to a semiconductor laser chip which comprises a substrate, a growth buffer layer, a lower waveguide layer, an active layer, an upper waveguide layer, an upper cladding and a cover layer which are sequentially stacked from bottom to top in the longitudinal direction. A plurality of current injection regions with different widths and a plurality of ion injection regions with different widths are arranged in the transverse direction of the semiconductor laser chip; a plurality of current injection regions are distributed between the two ion injection regions on the two sides; the ion implantation region penetrates through the cover layer and a part of the upper cladding layer in the longitudinal direction; forming a ridge waveguide structure on the cover layer; processing the ridge waveguide structure through ion implantation to form a lateral chirp electric injection modulation ridge waveguide structure; the chirp electric injection structure formed by the invention can regulate and control each order mode from the aspects of gain and loss, so that the loss of a high-order mode is greater than that of a fundamental mode, and finally, the effects of reducing the output of the high-order mode, reducing the divergence angle and improving the beam quality of a far field are achieved.

The invention provides a quantum well, a multi-quantum well epitaxial structure and a preparation method thereof, and belongs to the field of semiconductor lasers. The invention provides a quantum well which is of a multi-layer structure and comprises alternate quantum barrier layers and quantum well layers. The array substrate further comprises a gradient buffer layer. The adjacent quantum barrier layer and quantum well layer are combined through a gradient buffer layer; the bottom layer and the top layer in the multi-layer structure are quantum barrier layers; in a unit formed by the connected quantum barrier layer, gradual change buffer layer and quantum well layer, with the quantum barrier layer as the beginning and the adjacent quantum well layer as the end, the size of the gradual change buffer layer in the horizontal direction is gradually reduced, the emission wavelength of the gradual change buffer layer is gradually increased in the direction from beginning to end, and the emission wavelength of the gradual change buffer layer is gradually increased. The initial emission wavelength of the gradient buffer layer is consistent with the emission wavelength of the quantum barrier, and the final emission wavelength of the gradient buffer layer is smaller than the emission wavelength of the quantum well. The quantum well has a high carrier migration rate, a high refractive index and a high optical confinement factor.

The invention discloses a preparation method of a magic angle nano-cavity and a topological body cavity based on a quantum dot single photon source, and the method comprises the steps: carrying out the preprocessing of a substrate, and enabling the substrate to comprise a quantum dot layer, a substrate layer, and a sacrificial layer located between the quantum dot layer and the substrate layer; treating the pretreated substrate by adopting oxygen plasma; photoresist is spin-coated on the surface of the quantum dot layer of the substrate, exposure and development are carried out, and a pattern is formed on the surface of the photoresist; transferring the pattern on the photoresist to the quantum dot layer through etching; and removing the sacrificial layer by wet etching to prepare two photonic crystal cavities, namely a magic angle nano cavity and a topological body cavity. Through fine electron beam exposure dose control, precise inductively coupled plasma gas component and etching rate control and appropriate corrosive liquid concentration and time control, a high-stability and high-repeatability photonic crystal suspension cavity structure, namely a magic angle nano cavity and a topological body cavity, with a line width of 30-50 nm is realized.

The invention provides a patterned photonic crystal laser and a preparation method thereof, the laser comprises a substrate, and a first mask layer, a photonic crystal layer and a second mask layer which are sequentially deposited on the substrate, a light emitting area is etched in the central area of the second mask layer, and transparent conductive layers are deposited on the surface of the second mask layer and the light emitting area; a p-annular electrode is arranged on the surface of the transparent conductive layer on the second mask layer, and an n-annular electrode is arranged below the substrate; the photonic crystal layer is composed of a nanorod array and a polymer filled in gaps of nanorods; holes distributed in a patterned array are etched in the surface of the first mask layer, and nanorods are epitaxially grown in hole areas; the nanorod is formed by sequentially depositing a substrate contact layer, a first waveguide layer, a multi-quantum well layer, a second waveguide layer, a coating layer and a component gradient layer. According to the invention, through collaborative design optimization of all the layers, emission of laser with specific wavelength and preparation of a laser emitting laser with single longitudinal mode, narrow linewidth and stable wavelength are realized.

The invention relates to a method for improving epitaxial growth quality of a tunnel junction cascade semiconductor laser. The invention innovatively provides a strain superlattice gradient repair technology. By designing a low-temperature low-speed nucleation-high-temperature high-speed epitaxy composite growth mode, a periodic superlattice buffer layer is introduced to a tunnel junction interface. Wherein lattice strain relaxation is achieved at the rate of 0.5-2 / s in the low-temperature stage, defect coverage is completed at the rate of 4-8 / s in the high-temperature stage, and dislocation line bending is terminated on a superlattice interface through thermodynamic regulation and control. Compared with the traditional process, the scheme can obviously improve the crystal quality, and does not increase the specific contact resistance of the tunnel junction interface.

The invention discloses a monometallic waveguide GaN-based terahertz quantum cascade laser, which is characterized in that the bottommost layer of the structure is a substrate, an n-type highly-doped n + + layer, a QCL active region and an n-type doped layer are sequentially arranged on the substrate, a cathode electrode layer is arranged on the n-type highly-doped n + + layer, an anode electrode layer is arranged on the n-type doped layer, and an anode electrode layer is arranged on the anode electrode layer. Wherein the substrate is a GaN substrate, an AlN substrate or a SiC substrate. The invention also discloses a preparation method. On the basis of systematic research on refractive index related parameters of GaN under THz frequency, absorption of single-metal waveguide structure parameters on QCL light field limiting factors and free carriers is analyzed, and QCL with high light field limiting factors and low loss of different substrates is designed. Besides, according to the designed active region structure, the gain can reach 88 / cm at 10K and can reach 34 / cm at 280K, the corresponding wavelength is 6.6 THz, and the frequency which cannot be achieved by a traditional GaAs system is achieved.

The gallium nitride-based semiconductor laser comprises a substrate, a lower limiting layer, a lower waveguide layer, an active layer, an upper waveguide layer and an upper limiting layer which are sequentially arranged from bottom to top. According to the semiconductor laser element, the multi-vacancy electron phonon regulation and control layers of a multi-layer structure are arranged in the semiconductor laser element, and the electron affinity distribution characteristic and the polarization optical phonon energy distribution characteristic of each multi-vacancy electron phonon regulation and control layer are limited, so that single-vacancy, vacancy group and multi-vacancy regulation and control electron phonon structures are formed; the electron phonons are localized between the lower limiting layer and the lower waveguide layer, stokes frequency shift formed by photon energy difference between pump light and oscillation light is reduced, phonon vibration and phonon transport heat loss are reduced, the heat dissipation performance of a laser element is improved, thermal mismatch between epitaxial layers is improved, the thermal lens effect and stress birefringence effect of the laser are inhibited, and the laser efficiency is improved. The problems of laser beam distortion and depolarization are improved, and the laser beam quality factor is improved.

Disclosed is a semiconductor laser, from bottom to top, comprising: a substrate, a lower limiting layer, a lower waveguide layer, an active layer, an upper waveguide layer, and an upper limiting layer. The lower limiting layer is composed of at least one of AllnGaN, AllnN, AlGaN, InN, AlN, InGaN, and GaN. A thickness of the lower limiting layer is denoted as x, and 10 angstroms≤x≤90,000 angstroms. The lower limiting layer includes a first lower limiting layer, a second lower limiting layer, and a third lower limiting layer. The lower limiting layer forms an electron saving structure and a stress regulating structure to regulate a carrier distribution and a stress distribution of the active layer, thereby reducing a threshold current and improving a slope efficiency of the laser.

A method of fabricating an optoelectronic component, performed on a multi-layered wafer disposed on a substrate. The method comprises the steps of: etching the multi-layered wafer, thereby defining a slab and a multi-layered ridge, the slab having an upper surface below the ridge and being located between the multi-layered ridge and the substrate; selectively epitaxially growing a III-V semiconductor cladding adjacent to a first and second sidewall of the ridge, the cladding layer extending from the upper surface of the slab along the first and second sidewalls, and thereby cladding an optically active waveguide within the multi-layered ridge; and providing a first and second electrical contact, which electrically connect to a layer of the multi-layered ridge and the slab respectively.

High-power, integrated optical amplifiers are described in which gain waveguides of the amplifiers are designed to improve power performance by reducing power saturation effects in the amplifier. The gain waveguides can change, in at least one aspect, along the length of the gain waveguide to reduce gain saturation. Multi-mode optical beams and / or multi-stage amplification can also be employed to reduce gain saturation.

The invention provides a semiconductor laser chip with a current modulation function and a preparation method, and relates to the field of semiconductor laser chips, and the semiconductor laser chip comprises a substrate layer, an n-type limiting layer, an n-type waveguide layer, a quantum well active region, a p-type waveguide layer, a first p-type limiting layer, a second p-type limiting layer and a contact layer which are sequentially stacked from bottom to top, the anti-reflection cavity surface and the high-reflection cavity surface are arranged on the two opposite sides of the second p-type limiting layer, the functional area is arranged between the anti-reflection cavity surface and the high-reflection cavity surface and comprises a current injection sub-area and a current blocking sub-area, the current injection sub-area is provided with a plurality of injection tips, the current blocking sub-area is provided with a plurality of blocking tips, and the injection tips and the blocking tips are arranged on the first p-type limiting layer. The injection tip is arranged between any two adjacent blocking tips; two grooves formed in the first p-type limiting layer penetrate through the second p-type limiting layer and the contact layer, and the two grooves are located in the two opposite sides of the current injection sub-region and the current blocking sub-region. According to the semiconductor laser chip, the light emitting power and the light beam quality of the semiconductor laser chip can be improved.

The invention relates to the technical field of semiconductor lasers, in particular to a polarization-controllable high-power vertical-cavity surface-emitting laser array which comprises a first rhombohedral body, a second rhombohedral body is arranged on the top surface of the first rhombohedral body, positive electrodes are arranged on the two sides of the second rhombohedral body respectively, the positive electrodes are arranged on the first rhombohedral body, and the second rhombohedral body is arranged on the second rhombohedral body. Negative electrodes are symmetrically arranged on the top surface of the second rhombic surface body; the first rhombohedral body comprises a substrate layer, a tunnel layer and a lower layer p-type DBR which are sequentially arranged from bottom to top, and the positive electrode is arranged on the top surface of the lower layer p-type DBR; the second rhombohedron comprises an active region, an oxidation limiting layer and an upper layer n-type DBR which are sequentially arranged from bottom to top; a surface grating structure is arranged between the two negative electrodes; and the surface grating structure and the negative electrodes are arranged on the top surface of the upper-layer n-type DBR. According to the invention, the manufacturing process of the device array is simplified, and the overall performance of the device is effectively improved.

The invention provides a semiconductor photonic crystal light-emitting structure and a preparation method thereof. The semiconductor photonic crystal light-emitting structure comprises a semiconductor substrate layer; the active layer is positioned on one side of the semiconductor substrate layer; the photonic crystal layer is located on the side, away from the semiconductor substrate layer, of the active layer and comprises a first semiconductor layer, a second semiconductor layer and a protection layer, and a groove is formed in the first semiconductor layer; the groove extends into the first semiconductor layer from the surface of the side, away from the active layer, of the first semiconductor layer, and the protection layer is located on the surface of the inner wall of the groove. The second semiconductor layer is located on the surface of the side, away from the active layer, of the first semiconductor layer between the adjacent grooves and does not extend into the grooves. The light field mode regulation and control capability of the semiconductor photonic crystal light-emitting structure is improved.

The present invention provides an optical device having, on an Si substrate, a semiconductor layer formed from a gallium oxide-based material. This optical device comprises: a substrate (10) formed from an Si single crystal; a semiconductor layer (16) (an n-type layer (11), an active layer (12), and a p-type layer (13)) that is provided in contact with the substrate (10) and is formed from a uniaxially oriented gallium oxide-based semiconductor; a semiconductor layer (16); and two electrodes (a positive electrode (14) and a negative electrode (15)). The semiconductor layer (16) includes a light-emitting element structure having an n-type region (an n-type layer (11)) and a p-type region (a p-type layer (13)), or a second semiconductor layer formed from a gallium oxide-based semiconductor provided on a semiconductor layer, and two electrodes. The second semiconductor layer has a light-emitting element structure having an n-type region and a p-type region.

An emitter includes a substrate; a current-blocking distributed Bragg reflector (DBR) arranged on the substrate, wherein the current-blocking DBR includes a plurality of p-n junctions connected vertically in series to form a bidirectional current-blocking structure; a bottom contact layer arranged on the current-blocking DBR; a bottom DBR arranged on the bottom contact layer; a top DBR arranged on the bottom DBR; an active region configured to generate a laser light, wherein the active region is arranged between the bottom DBR and the top DBR; a top contact layer arranged on the top DBR; and an optical output arranged over the top DBR, wherein the emitter is configured to emit the laser light via the optical output.

A vertical cavity surface emitting laser diode (VCSEL) includes a substrate, a lower Bragg reflector (DBR) layer, an active region, an upper Bragg reflector (DBR) layer, and a current confinement layer. The lower DBR layer is on the substrate. The active region is on the lower DBR layer on the active region. The current confinement layer is inside or outside the active region. When the current confinement layer comprises a compound containing phosphorus, such as AlAsP or AlGaAsP, and the phosphorus (P) content is within a specific range, the insulation rate of the current confinement layer will not be excessively fast to the point of being difficult to control. Additionally, the reproducibility of the aperture in the current confinement layer between batches of the VCSEL production is improved. Furthermore, the divergence angle of the VCSEL can be further reduced, thereby significantly enhancing the sensing capabilities of Lidar or 3D sensing.

The invention provides a semiconductor laser chip and a preparation method, and belongs to the technical field of semiconductor laser chip preparation, and the semiconductor laser chip comprises an N-surface metal, a substrate, an N-type limiting layer, an N-type waveguide layer, a tensile strain quantum well, a P-type waveguide layer, a P-type limiting layer, an ohmic contact layer, a SiO2 insulating layer, a first P-surface metal layer and a second P-surface metal layer which are sequentially arranged from bottom to top. Waveguide grooves are symmetrically formed in the two sides of the ohmic contact layer and penetrate through the ohmic contact layer, the bottoms of the grooves sink to the P-type limiting layer but do not exceed the P-type limiting layer, and a ridge waveguide is formed between the two grooves. The depth of the waveguide groove is of a stepped structure in the longitudinal direction, the depth of the area close to the cavity surface is increased to the N-type waveguide layer, the area completely covers the SiO2 insulating layer and the first layer of P-surface metal, but no second layer of P-surface metal exists, and the longitudinal stepped structure is formed. Through the design of the tensile strain quantum well and the stepped waveguide groove, cavity surface tensile strain release is realized, light absorption is reduced, and the reliability and the service life of the chip are improved.

In an EADFB laser with an integrated SOA, a new configuration in which deterioration of optical waveform quality is solved or mitigated while taking advantage of characteristics that the same layer structure can be used and the manufacturing process can be simplified is shown. In an optical transmitter of the present disclosure, a carrier density is optimized depending on a light intensity inside the SOA and an amount of carrier consumption. The SOA is electrically separated into a plurality of regions, and a current is injected into each region independently. The divided SOA region is configured so that a length of the SOA region becomes shorter as a region is farther from an incidence end of the SOA. Further, for the divided SOA, an amount of carrier consumption increases as the SOA region is farther from the incidence end, so that a current injection amount is increased.

The invention relates to the technical field of laser, in particular to an on-chip series edge-emitting semiconductor laser array and a process method. The on-chip series edge-emitting semiconductor laser array sequentially comprises a semi-insulating substrate, a non-doped buffer layer, a P-type heavily doped layer, a P-type tunnel junction layer, an N-type tunnel junction layer, an N-type cladding, an N-type waveguide layer, an active region, a P-type waveguide layer, a P-type cladding and a P-type cover layer from bottom to top. Table surfaces on the two sides of each light-emitting unit are deeply etched to the P-type heavily doped layer, and a lateral current diffusion suppression groove is formed between the bottoms of any two adjacent light-emitting units. An on-chip series edge-emitting semiconductor laser array structure is adopted, the parasitic effect is reduced through coplanar electrode design, upper and lower electrodes can be prepared through a single process to reduce the cost, lateral current diffusion suppression grooves are formed between light-emitting units to reduce crosstalk, the light-emitting units are connected in series to work under the same injection current, and the light-emitting efficiency is improved. The requirements of a driving circuit can be effectively reduced, and light-emitting uniformity is improved.

A continuous-wave perovskite polariton laser device, including an optical microcavity, a spacer layer, and a gain medium. The gain medium is a perovskite material or a composite material containing perovskite, in a form of thin film, microcrystal, phosphor, nanocrystal, quantum dot, or single crystal. The perovskite gain medium is prepared by solution process or vacuum deposition technique, and is combined with an optical resonator. By exploiting the strong interaction between excitons and photons, a steady-state exciton-polariton condensation is formed, enabling the generation of continuous-wave polariton laser emission with a low threshold. The laser device can achieve low-threshold continuous-wave or pulsed lasing emission at room temperature under various light sources pumping or electrical excitation. Its threshold is 1 to 3 orders of magnitude lower than that of conventional semiconductor lasers, with an optimized threshold as low as 0.1 to 1 W / cm2, representing a novel ultralow-power coherent light source technology.

A two-dimensional photonic crystal surface emitting laser includes an n-doped substrate, an n-doped cladding layer, an active layer, a photonic crystal layer, a p-doped cladding layer and a p-doped contact layer arranged in sequence from top to bottom. The photonic crystal layer includes a base material and a plurality of unit cells arranged periodically, each unit cell includes a first different-refractive index region, a second different-refractive index region and a third different-refractive index region that have a different refractive index from the base material. The surface emitting laser based on the photonic crystal structure may maintain single-mode operating characteristics of a device under a large mode field area, so that a high-power single-mode surface emitting laser may be achieved.

The invention provides a high-power and high-efficiency single-mode semiconductor light-emitting structure and a preparation method thereof, the high-power and high-efficiency single-mode semiconductor light-emitting structure comprises a first Bragg reflector and a second Bragg reflector which are arranged along a first direction, and the reflectivity of the first Bragg reflector is greater than that of the second Bragg reflector; the multiple active layers are located between the first Bragg reflector and the second Bragg reflector and arranged in the first direction; the current limiting layer comprises a light emitting region and an oxidation region surrounding the light emitting region; the tunnel junctions are positioned between the adjacent active layers; the modulation layer is located on the side, away from the active layer, of the second Bragg reflector, the modulation layer comprises a first microstructure region and a second microstructure region surrounding the first microstructure region, the first microstructure region has a projection on a first part of the light emitting region in the first direction, and the second microstructure region has a projection on a second part of the light emitting region in the second direction; the second microstructure region has a projection on a second part of the light emitting region along the first direction, and the second part surrounds the first part.

The invention discloses an edge-emitting semiconductor laser and a manufacturing method thereof, and the laser comprises a substrate which is provided with a first surface and a second surface which are opposite to each other; the epitaxial structure is formed on the first surface of the substrate, the side, away from the substrate, of the epitaxial structure is constructed into a ridge-shaped structure, the ridge-shaped structure comprises a plurality of ridge-shaped units which are periodically arranged in the first direction and have a preset geometrical shape, and each side face of the ridge-shaped units is parallel to the crystal face of the semiconductor material forming the ridge-shaped structure; the plurality of ridge-shaped units are arranged in an overlapping manner or in a tangent manner or in a spaced manner; the passivation layer is formed on the surface, away from the substrate, of the epitaxial structure, and a window area is arranged on the top of the ridge structure on the passivation layer; the first electrode is at least formed in the window area and electrically connected with the epitaxial structure; the second electrode is formed on the second surface of the substrate. According to the edge-emitting semiconductor laser and the manufacturing method thereof, self-coupling and directional emission can be realized.

A vertical cavity surface emitting device includes a substrate, a first multilayer film reflecting mirror formed on the substrate, a light-emitting structure layer formed on the first multilayer film reflecting mirror and including a light-emitting layer, and a second multilayer film reflecting mirror formed on the light-emitting structure layer. A resonator is constituted between the second multilayer film reflecting mirror and the first multilayer film reflecting mirror. The light-emitting structure layer includes a low resistance region and a high resistance region. The low resistance region is disposed in a ring shape between the first multilayer film reflecting mirror and the second multilayer film reflecting mirror. The high resistance region is formed inside the low resistance region and has an electrical resistance higher than an electrical resistance of the low resistance region.