142 results about "Solid-state laser device" patented technology

An edge emitting solid state laser and method. The laser comprises at least one AlInGaN active layer on a bulk GaN substrate with a non-polar or semi-polar orientation. The edges of the laser comprise {1 1 −2 ±6} facets. The laser has high gain, low threshold currents, capability for extended operation at high current densities, and can be manufactured with improved yield. The laser is useful for optical data storage, projection displays, and as a source for general illumination.

Apparatus and method for achieving improved performance in a solid-state laser. The solid-state laser apparatus preferably uses a laser gain medium in the shape of a disk wherein optical pump radiation is injected into the peripheral edge of the disk. In the preferred embodiment the laser gain medium is provided with optical coatings for operation in the active mirror configuration. Furthermore, the laser gain medium is pressure-clamped to a rigid, cooled substrate, which allows it to maintain a prescribed shape even when experiencing significant thermal load. A cooling medium can be provided to a heat exchanger internal to the substrate and / or flowed through the passages on the substrate surface, thereby directly cooling the laser gain medium. Sources of optical pump radiation are placed around the perimeter of the gain medium. Tapered ducts may be disposed between the sources and the gain medium for the purpose of concentrating optical pump radiation. With the proper choice of laser gain medium doping, pump source divergence and geometry, a uniform laser gain is achieved across large portions of the gain medium.

A semiconductor laser device including a laser element stack array emitting a two-dimensional array shaped group of laser beams consisting of rows of laser beams arranged linearly in parallel in a broken line configuration and optical elements arranged in front of the array, receiving rows of laser beams bent and collimated in a direction substantially perpendicular to the orientation of the broken line configuration. Laser beams are emitted from emitters or groups of emitters and are rotated by right angles so as to convert the laser beams to a plurality of rows aligned in parallel in an approximate ladder rung configuration and the distance between center axes of the rows of laser beams is shortened to condense the laser beams by converting them to a group of laser beams emitted from a common object and thereby making all laser beams converge to a single image.

Apparatus and method for achieving improved performance in a solid-state laser. The solid-state laser apparatus preferably uses a laser gain medium in the shape of a disk wherein optical pump radiation is injected into the peripheral edge of the disk. In the preferred embodiment the laser gain medium is provided with optical coatings for operation in the active mirror configuration. Furthermore, the laser gain medium is pressure-clamped to a rigid, cooled substrate, which allows it to maintain a prescribed shape even when experiencing significant thermal load. A cooling medium can be provided to a heat exchanger internal to the substrate and / or flowed through the passages on the substrate surface, thereby directly cooling the laser gain medium. Sources of optical pump radiation are placed around the perimeter of the gain medium. Tapered ducts may be disposed between the sources and the gain medium for the purpose of concentrating optical pump radiation. With the proper choice of laser gain medium doping, pump source divergence and geometry, a uniform laser gain is achieved across large portions of the gain medium.

This invention relates to the use of novel glass materials comprising rare earth aluminate glasses (REAl™ glasses) in the gain medium of solid state laser devices that produce light at infrared wavelengths, typically in the range 1000 to 3000 nm and for infrared optics with transmission to approximately 5000 nm in thin sections. The novel glass materials provide stable hosts for trivalent ytterbium (Yb3+) ions and other optically active species or combinations of optically active species that exhibit fluorescence and that can be optically excited by the application of light. The glass gain medium can be configured as a waveguide or placed in an external laser cavity, or otherwise arranged to achieve gain in the laser waveband and so produce laser action.

A semiconductor laser light source device and light source unit according to the present invention include a first plate-like member made of metal, to which a semiconductor laser array is joined along the end portion, a second plate-like member made of metal, in which an inlet opening portion, which introduces cooling fluid, and a cooling fluid draining channel, and a third plate-like member made of metal, which is formed along the area corresponding to the end portion and to which at least one cooling channel is provided through which cooling fluid flows in the longitudinal direction of the semiconductor laser array by communicating the cooling fluid introducing channel and the cooling fluid draining channel. Thus, the sectional area of the channel can be larger than that in the construction of the related art and the processing cost is reduced by comparison with the construction of the related art. The problems of blocking path with an extraneous matter and of high-pressure loss due to the path are overcome. Since the channel is provided along the longitudinal direction of the semiconductor laser array, the semiconductor laser array can be cooled efficiently.

A method for processing a brittle substrate includes first providing a brittle substrate having a substrate surface. Then applying a first laser beam onto the brittle substrate surface to form a pre-cut groove in the brittle substrate, the first laser beam being generated by a solid-state laser device. A second laser beam is then applied onto the brittle substrate surface along the precut groove to heat the brittle substrate, the second laser beam being generated by a gas laser device. Finally, a coolant is applied onto the brittle substrate along the pre-cut groove so as to cause formation of a through crack in the brittle substrate. The first laser beam can be generated by a solid-state laser device, the first laser beam should be of narrow diameter and high energy density, so the first laser beam can form a pre-cut groove rapidly and accurately without generation of micro-cracks, in addition, the pre-cut groove should have a better uniformity and linearity.

A solid-state laser device, comprising a first optical axis and a second optical axis having a commonly used optical axis portion and separated by an optical axis separating means, a first resonator composed on the first optical axis, a second resonator composed on the second optical axis, a first light emitter for allowing an excitation light to enter the first resonator, a second light emitter for allowing an excitation light to enter the second resonator, a wavelength conversion unit provided on the commonly used optical axis portion, and an output mirror provided on an exit side of the wavelength conversion unit, wherein the wavelength conversion unit comprises two or more optical crystals for wavelength conversion, the output mirror has two or more individual output mirrors, and a wavelength of a laser beam to be projected is determined by selection of turning-on or turning-off of the first light emitter and the second light emitter, and also by selection of the optical crystals for wavelength conversion and the individual output mirrors depending on turning-on and turning-off of the first light emitter and the second light emitter.

In a solid-state laser device, a single outer casing (1) having an approximately sealed structure is included; a single or a plurality of inner casings (2) are provided inside the outer casing (1); in some or all of the inner casings (2), an air cleaning unit (4) is included in which the air within the outer casing (1) is made clean and supplied into the inner casings (2); inside the outer casing (1), there disposed are a laser light-source (5, 6, 7) having a solid-state laser medium (501) and a light resonator, and an optical system (10, 11, 901) that transmits or interrupts a laser beam (8) emitted from the laser light-source; in addition, the laser light-source (5, 6, 7) and the optical system (10, 11, 901) or part of them are contained inside the inner casings (2); thus, in a simple, compact and inexpensive configuration, it is possible to prevent degradation of optical components and dew condensation thereon, and to stably supply a laser beam.

A method for processing a brittle substrate includes first providing a brittle substrate having a substrate surface. Then applying a first laser beam onto the brittle substrate surface to form a pre-cut groove in the brittle substrate, the first laser beam being generated by a solid-state laser device. A second laser beam is then applied onto the brittle substrate surface along the precut groove to heat the brittle substrate, the second laser beam being generated by a gas laser device. Finally, a coolant is applied onto the brittle substrate along the pre-cut groove so as to cause formation of a through crack in the brittle substrate. The first laser beam can be generated by a solid-state laser device, the first laser beam should be of narrow diameter and high energy density, so the first laser beam can form a pre-cut groove rapidly and accurately without generation of micro-cracks, in addition, the pre-cut groove should have a better uniformity and linearity.

There is provided a semiconductor laser pumped solid-state laser device for engine ignition that can stably provide optical energy required for ignition across a wide temperature range. In the semiconductor laser pumped solid-state laser device for engine ignition, a plurality of semiconductor lasers 21, 22, 23, and 24 are used that have locking ranges, a temperature width thereof divided into a plurality of temperature ranges corresponding to a variation width of an ambient temperature, and that have the respective wavelengths falling within an absorption wavelength band of a solid-state laser medium 5 of the solid-state laser device in the temperature width of each locking range, to pump the solid-state laser medium 5 by multiplexing emitted lights from the plurality of semiconductor lasers 21, 22, 23, and 24 using a multiplexing mechanism to irradiate the solid-state laser medium 5.

A laser-diode-pumped solid-state laser apparatus includes a laser rod, and laser diode devices that generate pumping light. Optical unit such as a reflection mirror and an optical waveguide medium is provided at a position in a laser resonator near a laser optical axis and not blocking the optical axis. A photo-detector detects a quantity of fluorescence generated from solid-state laser medium. The fluorescence quantity is compared with a predetermined value or a previously measured value. Thus degradation status of a laser diode light source is constantly diagnosed.

A solid-state laser apparatus includes: a semiconductor laser light source for emitting laser light; an optical resonator having a solid-state laser medium to be excited by incidence of the laser light to oscillate fundamental laser light, and a mirror; and a quasi phase matching wavelength converting element, disposed in the optical resonator, for converting a wavelength of the fundamental laser light, wherein the quasi phase matching wavelength converting element is formed with a polarization inversion region having a predetermined cycle, and the length of the polarization inversion region in an optical axis direction is 1.0 mm or less.

A Tb-doped luminescent compound contains Tb and at least two kinds of metal elements other than Tb, and emits light by irradiation with excitation light. In the Tb-doped luminescent compound, the concentration of Tb with respect to the total number of moles of all of the metal elements including Tb is within the range of more than 3.75 mol % to 20.625 mol % inclusive.

A high gain solid-state laser apparatus capable of generating short-pulse terahertz waves with high efficiency is provided. The apparatus includes laser gain media 1 and an optical switch 3 that entraps seed light from a laser oscillator into the apparatus and outputs amplified laser light pulses from the apparatus. In the apparatus, ytterbium-doped lutetium lithium tetrafluoride (LuLiF4) crystal that is cooled below the liquid-nitrogen temperature is used as the laser gain media.

A tunable solid state laser device are described comprising a semiconductor based gain chip and a silicon photonic filter chip with tuning capability. The silicon photonic filter chip can comprises an input-output silicon waveguide, at least two ring resonators formed with silicon waveguides, one or more connecting silicon waveguides interfacing with the ring resonators, a separate heater associated with each ring resonator, a temperature sensor configured to measure the chip temperature, and a controller connected to the temperature sensor and the separate heaters and programmed with a feedback loop to maintain the filter temperature to provide the tuned frequency. The one or more connecting silicon waveguides are configured to redirect light resonant with each of the at least two ring resonators back through the input-output silicon waveguide. Corresponding methods are described for the control of the laser frequency. Improved structures of the SiPho multiple filter chip involve a Zagnac interferometer.

A semiconductor laser light source 10 emits a laser beam for pumping. An optical resonator 2 includes a solid laser crystal 15 to be excited by the incident of a laser beam to oscillate a fundamental wave 20 and a pair of fundamental wave reflective coats 14, 16 arranged at the opposite sides of the solid laser crystal 15. A wavelength conversion element 18 converts the fundamental wave 20 into a plurality of harmonics 21, 22. The wavelength conversion element 18 is so arranged in the optical resonator 2 that the optical axis of at least one of the plurality of harmonics 21, 22 generated in the optical resonator 2 is made different from that of the fundamental wave 20 and the at least one harmonic 22 whose optical axis is made different is output substantially in the same direction as the other harmonic 21. By this construction, it is possible to stabilize a harmonic output and utilize a plurality of harmonics without increasing the number of parts.

A laser system is enabled to generate laser beam stably for a long term by avoiding the decay of nonlinear optical crystals due to moisture. The fundamental laser wave at a wavelength of 1064 nm is emitted from the pumping chamber unit of the solid-state laser device. The fundamental laser wave enters the first nonlinear optical crystal unit (20). The wavelength of the laser beam is converted into a half by the first nonlinear optical crystal unit (20). The converted laser beam emanates out of the unit. The fundamental laser wave and the second harmonic laser wave are introduced into the second nonlinear optical crystal unit. Each of the laser beams is converted into the third harmonic laser wave (three-time fundamental frequency) or the fourth harmonic laser beam (four-time fundamental frequency) and the laser beam comes out of the exit-window (34). The nonlinear optical crystal units (20), (30) are held in a hermetically sealed cell whose inner surface is treated to be water-repellent. As the dry atmosphere is kept by means of isolating the nonlinear optical crystal from the outer air, the crystals can avoid decay due to moisture and the damage on the crystals can be reduced.

A dispersion compensator which is compact, low loss, low cost, and highly stable, and yet capable of varying the dispersion compensation amount without changing the output position of an output beam. The dispersion compensator includes: a first and a second planar mirrors disposed parallel to each other, wherein at least either one of the mirrors has group velocity dispersion whose value varies according to the incident angle of light incident on the mirror; a mirror holding means rotatably holding the first and second mirrors in a direction in which the incident angle of light incident on the first mirror is changed while maintaining the parallel state of the mirrors; and a third mirror disposed so as not to be rotated with the first and second mirrors and reflects light reflected sequentially by the first mirror and the second mirror.

A semiconductor laser array is arranged on the side of a solid state laser element, and an optical resonator to an excitation light is constructed by applying a high reflection coating to an oscillation wavelength of the semiconductor laser array is applied to an end face of the semiconductor laser array positioned on the opposite side to the solid state laser element and a side of the solid state laser element positioned on the opposite side to the semiconductor laser array. The solid state laser element is arranged on the inside of the optical resonator, and the solid state laser element is excited optically by the excitation light.

The invention provides a solid state laser device array packaging structure comprising inverse T-shaped positive pole heat sinks and inverse T-shaped negative pole heat sinks, and semiconductor laser device bars are arranged between protruding part end faces of the positive pole heat sinks and protruding part end faces of the negative pole heat sinks. The solid state laser device array packaging structure is characterized in that the positive heat sinks and the negative heat sinks are designed to be of an inverse T-shaped structure; and therefore heat sinks having protruding parts which are different in length can be selected and packaged when six-core, eight-core, ten-core or twenty-core bars are adopted according to the magnitude of power needed by laser devices in packaging processes; different requirements of the laser devices are satisfied, large change of subsequent packaging operation is not needed, and a positive and negative pole short circuit phenomenon which can be easily caused by adoption of rectangular heat sinks can be prevented, and operation difficulty is lowered.

A solid-state laser apparatus may include a first oscillator, a laser light generator, and a plurality of stages of fiber amplifiers. The first oscillator may be configured to output seed light. The laser light generator may be configured to output a pulsed laser light beam generated on a basis of the seed light. The plurality of stages of fiber amplifiers may be disposed in series in an optical path of the pulsed laser light beam, and may include a final stage fiber amplifier. The final stage fiber amplifier may be located in a final stage in the plurality of stages of fiber amplifiers, and may include a silica fiber doped with erbium and ytterbium. A value as a result of division of a cross-sectional area of the silica fiber by a fiber length of the silica fiber may be in a range from 0.7 nm to 1.64 nm both inclusive.

There is provided a solid-state laser apparatus, including a solid-state active element (4) having major surfaces and first and second edges (10,12) oppositely disposed to each other, the first edge (10) being flat and the second edge (12) being constituted by first and second perpendicularly disposed surfaces (12) or having first and second perpendicularly disposed surfaces (12) located adjacent to the second edge, a back reflector (16) and an output coupler (18) located at, or adjacent to, the first edge (10). Light induced in the cavity forms two parallel beams passing therethrough, by means of a first beam which is reflected by the back reflector (16) towards a first of the perpendicularly disposed surfaces and being folded to pass on to the second surface, to be further folded and to proceed towards the first edge (10). A saturable absorber (14) may be attached to the first edge (10).

A laser device 1 is provided with: a solid sate laser medium made of GdVO4 or YVO4 to which Nd3+ is added, having first and second surfaces 10A, 10B facing each other; a high reflection film 12 formed on the first surface of the laser medium for reflecting light having a wavelength in a first wavelength range 880±5 nm and in a second wavelength range from 910 nm to 916 nm; a reflecting means 20 placed in a manner where an optical resonator of which the resonance Q-value for light having a wavelength in the second wavelength range is greater than the resonance Q-value for light of every wavelength in a third wavelength range from 1060 nm to 1065 nm is formed together with the high reflection film and the laser medium is positioned within the resonator; and an excitation light source 22 that outputs light having a wavelength in the first wavelength range for exciting the laser medium. Laser device 1 is formed so that light from the excitation light source is guided into the resonator in a direction different from the optical axis direction of the resonator, and enters into the laser medium. As a result, a solid state laser device having a high light-emission efficiency can be implemented.