2164results about "Laser optical resonator construction" patented technology

The invention relates to the technical field of semiconductor lasers, in particular to a laser based on a bimetallic Bragg grating and a top surface HR reflecting film, which comprises a gain chip, a first high-reflection HR film is plated on the left end surface of the gain chip, and a first anti-reflection AR film is plated on the right end surface of the gain chip. A metal Bragg grating waveguide is arranged on the right side of the gain chip, the right end face of the gain chip and the left end face of the metal Bragg grating waveguide are aligned and attached to form an outer cavity structure, and the left end face of the metal Bragg grating waveguide is plated with a second anti-reflection AR film. The right end face of the metal Bragg grating waveguide is plated with a third anti-reflection AR film. Performance test is carried out on the laser provided by the invention, and test results show that the line width is 0.6 kHz, the SMSR is 63dB, and the threshold current is 22mA, thereby verifying the effectiveness of the laser provided by the invention.

Electro-absorption modulators (EAM) and monolithically integrated electro-absorption modulated lasers (EML) and methods of fabrication are disclosed. Vertically stacked waveguides for a distributed feedback (DFB) laser, an electro-absorption modulator (EAM) and a passive output waveguide are vertically integrated, and the DFB laser, EAM and output waveguide are optically coupled using laterally tapered vertical optical couplers. Laterally tapered vertical optical couplers provides an alternative to conventional butt-coupling of a laser and EAM, offering improved reliability for high power operation over extended lifetimes. Optionally, the EML comprises monolithically integrated electronic circuitry, e.g., driver and control electronics for the DFB laser and EAM. Beneficially, integrated EAM driver and control circuitry comprises a high-speed electro-optical control loop for very high-speed linearization and temperature compensation, e.g. to enable advanced modulation schemes, such as PAM-4 and DP-QPSK, for analog optical data center interconnect applications. Some embodiments are compatible with fabrication using a single epitaxial growth.

A photonic chip. In some embodiments, the photonic chip includes a waveguide; and an optically active device comprising a portion of the waveguide. The waveguide may have a first end at a first edge of the photonic chip; and a second end, and the waveguide may have, everywhere between the first end and the second end, a rate of change of curvature having a magnitude not exceeding 2,000 / mm2.

The invention relates to the technical field of laser, in particular to a dual-wavelength narrow-linewidth laser output device and method.The dual-wavelength narrow-linewidth laser output device comprises a semiconductor laser unit emitting linearly polarized light beams, and a light beam conversion lens is used for achieving conversion of semiconductor laser fast-axis light beams and semiconductor laser slow-axis light beams; the light beam conversion lens is used for collimating and compressing a semiconductor laser fast axis divergence angle, and the slow axis collimating lens is used for collimating and compressing a semiconductor laser slow axis divergence angle; the linearly polarized light beam is divided into a first light beam and a second light beam through the rectangular prism; the first light beam sequentially passes through a first volume Bragg grating, a first reflector, a half-wave plate and a polarization beam combiner; the second light beam sequentially passes through a second volume Bragg grating, a second reflector and a polarization beam combiner; the dual-wavelength narrow-linewidth semiconductor laser can solve the problems of precise regulation and control and power amplification of the central wavelength of the dual-wavelength narrow-linewidth semiconductor laser, has power expansibility, and realizes improvement of laser power by stacking a plurality of laser units in the vertical direction.

Embodiments of the present application relate to the technical field of semiconductor lasers, and provide a semiconductor laser and a manufacturing method therefor, which are used to mitigate the problem of chirp in semiconductor lasers. The semiconductor laser comprises: a substrate; a ridge waveguide which is arranged on the substrate and extends in a first direction of the substrate; and a grating which is arranged at a top portion of the ridge waveguide. The grating comprises first regions and second regions periodically arranged in the first direction, each first region comprises a semiconductor material, each second region comprises an insulating dielectric material, and the refractive index of the insulating dielectric material is greater than the refractive index of the semiconductor material.

The invention relates to the technical field of semiconductor lasers, in particular to a laser based on a bimetallic Bragg grating and a top SiO2 waveguide layer, which comprises a gain chip, the left end face of the gain chip is plated with a first high-reflection HR film, and the right end face of the gain chip is plated with a first anti-reflection AR film; a metal Bragg grating waveguide is arranged on the right side of the gain chip, the right end face of the gain chip and the left end face of the metal Bragg grating waveguide are aligned and attached to form an outer cavity structure, and the left end face of the metal Bragg grating waveguide is plated with a second anti-reflection AR film. The right end face of the metal Bragg grating waveguide is plated with a third anti-reflection AR film. According to the invention, a temperature change test is carried out, and the wavelength drift is controlled to be + / -0.002 nm in a range of-40 DEG C to 85 DEG C; performance test results show that the line width is 0.6 kHz, the SMSR is 65 dB, and the threshold current is 22 mA.

The invention discloses a distributed feedback laser and a preparation method thereof, and relates to the field of lasers. The preparation method of the distributed feedback laser comprises the following steps: forming a lower limiting layer, a lower waveguide layer, an active layer, an upper waveguide layer, an upper limiting layer, a grating layer, a grating buried layer, a corrosion stop layer, an InP cladding, a barrier gradient layer, a contact layer and a sacrificial layer on a substrate, wherein the sacrificial layer comprises an InP layer and an InGaAs layer which are stacked in sequence; etching to form a ridge waveguide structure; forming an insulating layer; removing the insulating layer in a preset area on the ridge waveguide structure to expose the sacrificial layer; wherein the side wall of the InGaAs layer is completely exposed, and the side wall of the InP layer is partially exposed; and etching to remove the InGaAs layer and the InP layer to form an upper electrode layer and a lower electrode layer. According to the invention, the reliability and the electro-optical conversion efficiency of the distributed feedback laser can be improved.

The invention provides a surface grating surface emitting laser. The surface grating surface emitting laser comprises an N-face metal electrode layer; an N-face waveguide layer, an active layer, a P-face waveguide layer and a ridge waveguide layer are sequentially stacked on the N-face metal electrode layer, wherein the ridge waveguide layer comprises a gain region and a loss region; the P-surface metal electrode layer is arranged on the gain region of the ridge waveguide layer; and the P-surface silicon dioxide layer is arranged on the loss region of the ridge waveguide layer. According to the laser, through the characteristic that mode fields are distributed in a loss area and a gain area after PT symmetric breaking, a light field achieves surface light emitting through vertical diffraction coupling of surface gratings of the loss area, and the laser is different from a common laser structure in which gratings are completely etched in the longitudinal direction and electrodes are manufactured on the two sides. The mode gain difference is symmetrically manufactured through PT, double lobes are eliminated, a single mode is stabilized, lambda / 4 phase shift does not need to be introduced, and the process difficulty is reduced.

The invention discloses a monolithic integrated light emitting chip and a manufacturing method thereof, and relates to the technical field of semiconductor devices.The chip comprises a substrate, a passive waveguide layer, a first laser layer, a second laser layer, a modulator layer, a wrapping layer and a contact layer, the passive waveguide layer is formed by etching according to a preset pattern, and the first laser layer is formed on the substrate; comprising two input branches and an output branch, a first laser layer is arranged on one of the input branches, a second laser layer and a modulator layer are arranged on the other optical signal input branch, paths of the two input branches are coupled into a path of the output branch, gratings are arranged on the two laser layers, and the modulator layer is arranged on the output branch. A cladding and a contact layer are disposed over the functional layers. The two different laser layers are integrated in the chip, and the optical signals emitted by the different laser layers are combined and output through the passive waveguide layer with the predetermined pattern, so that the cost of the optical emission module is effectively reduced, the power consumption is reduced, and the product reliability is improved.

The laser module includes a QCL element, a MEMS diffraction grating, a lens holder holding a lens disposed between the QCL element and the MEMS diffraction grating, a package, an electrode terminal disposed along an inner wall surface of the package, and a wire for electrically connecting the electrode terminal and a coil. The top wall of the package faces the bottom wall of the package in a direction orthogonal to the optical axis direction of the lens. The MEMS diffraction grating includes an electrode pad electrically connected to the coil. The electrode pad is connected to the electrode terminal via the wire. A height position of the electrode pad with respect to the bottom wall is equal to or higher than a height position of the electrode terminal with respect to the bottom wall.

The invention relates to the technical field of semiconductor lasers, in particular to a DFB laser based on a top metal grating, and the DFB laser comprises a gain chip, the left end face of the gain chip is plated with a high-reflection HR film, and the right end face of the gain chip is plated with an anti-reflection AR film; the upper end face of the gain chip is provided with a ridge optical waveguide, and the upper end face of the ridge optical waveguide is provided with a metal Bragg reflection grating layer. A self-heterodyne interference method (the line width of a local oscillator is smaller than 500 Hz) is adopted, and the measured value of the 3dB line width is 50 Hz (the measured value of a traditional DFB is 125 kHz). The mode purity degree is verified through a Lorenzian fitting broadening factor 1.15; the wavelength drift is less than 0.05 pm / DEG C within the range of-40 DEG C to 85 DEG C after compensation of the temperature compensation circuit. The temperature tuning coefficient is 0.08 pm / DEG C, the current tuning coefficient is 0.05 pm / mA, and the tuning coverage range is 1530-1545 nm.

A hybrid laser is provided having a tuning structure that alters a wavelength range of an amplified lightwave in a micro-ring resonator (MRR). The tuning structure alters an index of refraction of a tuned ring resonator to alter the index of refraction.

The invention discloses a compact monolithic dual-wavelength distributed feedback laser device and a manufacturing method thereof, and belongs to the technical field of laser, the laser device is composed of a front part, a middle part and a rear part, and the middle part comprises two equivalent Pi phase shift chirp sampling gratings. The laser is based on a reconstruction equivalent chirp technology and has a tunable wavelength interval. A chirp sampling grating with two equivalent phase shifts is arranged in the laser, and the grating is composed of a front part, a middle part and a rear part. Phase matching is achieved through the microstructure quasi-phase matching technology, it is ensured that a laser resonant cavity reaches the phase matching condition at the phase shift position, and wide-range adjustment expanded from 59.50 GHz to 116.25 GHz can be effectively achieved by changing injection current. The invention has the advantages of accurate wavelength control, simple structure, low power consumption, high integration level and the like.

The invention relates to the technical field of semiconductors, and discloses an edge-emitting semiconductor laser and a preparation method thereof, and the preparation method comprises the steps: forming a current injection region and a passivation layer at the side part of the current injection region on the surface of one side, opposite to an upper limiting layer, of a P-surface contact layer of a laser wafer; the laser wafer is divided into a plurality of laser chips in the vertical direction through a plurality of first cleavage channels and a plurality of second cleavage channels; forming a first P-type metal layer on the surface of the laser chip, the surface of the first cleavage channel and the surface of the first region of the second cleavage channel; forming a second P-type metal layer on the surface of one side of the first P-type metal layer of the laser chip through an electroplating process; the first P-type metal layer in the first region is used for communicating the surfaces of the plurality of laser chips; the laser wafer is cleaved into a plurality of edge-emitting semiconductor lasers. Compared with the prior art, the reliability and the yield of the edge-emitting high-power laser can be improved, and the cost of a preparation process is reduced.

The invention provides a distributed feedback laser with a double-layer grating structure, and relates to the technical field of lasers, the laser forms an InGaAlAs multi-quantum well active region, an upper sampling grating layer and a lower phase shift grating layer on an n-type InP substrate in sequence, the upper grating layer is designed based on a reconstruction equivalent chirp technology, and the lower phase shift grating layer is designed based on a reconstruction equivalent chirp technology. Two sections of asymmetric modulation areas with sampling periods linearly gradually changing in opposite directions are arranged in the axial direction of the resonant cavity, and the lower grating layer is a quarter-wave phase shift grating matched with the period of the upper seed grating. Through the synergistic effect of equivalent phase modulation and phase shift generated by the double-layer grating, the photon density distribution in the cavity can be improved, the longitudinal space hole burning effect can be weakened, the sensitivity to end face phase fluctuation can be reduced, high single-mode power and large modulation bandwidth can be realized in a wide temperature range, and the double-layer grating is suitable for a high-speed optical communication and coarse wavelength division multiplexing transmission system.

The invention discloses a preparation method of a magic angle nano-cavity and a topological body cavity based on a quantum dot single photon source, and the method comprises the steps: carrying out the preprocessing of a substrate, and enabling the substrate to comprise a quantum dot layer, a substrate layer, and a sacrificial layer located between the quantum dot layer and the substrate layer; treating the pretreated substrate by adopting oxygen plasma; photoresist is spin-coated on the surface of the quantum dot layer of the substrate, exposure and development are carried out, and a pattern is formed on the surface of the photoresist; transferring the pattern on the photoresist to the quantum dot layer through etching; and removing the sacrificial layer by wet etching to prepare two photonic crystal cavities, namely a magic angle nano cavity and a topological body cavity. Through fine electron beam exposure dose control, precise inductively coupled plasma gas component and etching rate control and appropriate corrosive liquid concentration and time control, a high-stability and high-repeatability photonic crystal suspension cavity structure, namely a magic angle nano cavity and a topological body cavity, with a line width of 30-50 nm is realized.

To provide an optical unit which is used inside of a laser oscillator of an external resonance type and capable of suppressing an output loss during external oscillation.SOLUTION: An optical unit 60 comprises a FAC lens array 63 and a beam twister array 64. A second surface 63b of the FAC lens array 63 includes a curvature part. A first surface 63a of the FAC lens array 63 and third and fourth surfaces 64a and 64b of the beam twister array 64 are flat surfaces. A first antireflection layer AR1 of a first reflection factor is provided on the flat surface, and a second antireflection layer AR2 of a second reflection factor is provided on the second surface 63b. The first and second reflection factors are lower than a predetermined reflection factor, and the second reflection factor is higher than the first reflection factor. A fluctuation rate of the reflection factor with respect to film thickness fluctuation of the second antireflection layer AR2 is smaller than that of the first antireflection layer AR1.SELECTED DRAWING: Figure 7B

The invention discloses a full-locking integrated microcavity optical comb based on coherent population trapping spectral lines, and belongs to the technical field of integrated microcavity optical combs. The full-locking integrated micro-cavity optical comb comprises a laser generation module, a frequency reference subsystem and a micro-cavity optical comb system. The laser generation module is used for generating two paths of laser, the frequency reference subsystem modulates one path of laser, a modulated optical signal is emitted into the atomic gas chamber system, and after transmission light is demodulated and subjected to phase-locked amplification processing, an optical frequency signal and a microwave signal which are locked to an atomic spectral line are obtained; and the optical frequency signal is fed back to the laser generating module to realize optical frequency locking. And the microcavity optical comb system adopts a microwave signal generated by the frequency reference subsystem as a frequency reference, and modulates the other path of laser to serve as pump light to enter the optical microcavity, so that optical comb output of a soliton state in the optical microcavity is realized. According to the invention, a single quantum system is taken as a reference, the problem of full locking of the micro-cavity optical frequency comb is effectively solved, and the system integration degree is relatively high.

A chip-scale mode-locked laser including a cavity including a gain medium for amplifying signal electromagnetic radiation (signal) through stimulated emission, the signal comprising a signal wavelength; and a passive or active mode-locking device to enforce pulse formation in the laser. The mode-locking device includes a thin-film waveguide having a thickness on the order of the signal wavelength so as to confine and guide the signal along the thin-film waveguide, and a material comprising a second-order nonlinear susceptibility to enable active or passive mode-locking of the signal. The mode-locking device leads to generation of pulses of the signal outputted from the mode-locked laser.

The invention provides a topological polygonal laser. According to the device, a topological non-trivial domain formed by two-dimensional gyromagnetic photonic crystals is combined with a trivial domain, and an out-of-plane magnetic field externally applied to a sublattice A is started to open an energy band gap, so that a multi-position angular state is realized. The two-dimensional gyromagnetic photonic crystal opens or closes an out-of-plane magnetic field externally applied to the sub-lattice A so as to realize opening and closing of the angular state of the topological angular state laser. The topological multi-angular-state laser is realized by taking the two-dimensional gyromagnetic photonic crystal as a platform, and the topological multi-angular-state laser has the advantages that switching of angular states can be realized without changing the structure, and the laser is topologically protected and has topological robustness.

The invention discloses an external cavity tunable laser linewidth compression system for realizing wavelength phase locking based on mutual injection of gain chips. The external cavity tunable laser linewidth compression system comprises a red light semiconductor laser main gain chip, a first collimation optical system, a blazed grating, a tuning rotating mirror, a reflector, a power supply driving system and a double-path feedback amplification system, the double-path feedback amplification system comprises a first secondary gain chip, a second secondary gain chip, a second collimation optical system, a third collimation optical system and a polarization-free beam splitter prism; and the red light semiconductor laser main gain chip, the first secondary gain chip and the second secondary gain chip are all connected with the power supply driving system. Therefore, the technical problems of low output infrared light power, poor stability and narrow mode-hopping-free tuning range in the prior art are solved, and high-power, narrow-linewidth, high-stability and large-range mode-hopping-free continuous tuning red light output can be realized.

The invention discloses a low-divergence-angle narrow-linewidth high-power semiconductor laser. Relates to the technical field of semiconductor lasers, in particular to a low-divergence-angle narrow-linewidth high-power semiconductor laser. According to the invention, the parabolic waveguide structure is etched in the light field expansion area, and the metal reflector is introduced to realize a novel light field expansion and metal reflector integrated structure, and the transverse divergence angle of a laser mode is reduced through the expansion structure at the tail end of the waveguide. The laser comprises a laser gain area, a light field expansion area and a spectrum purification area at the tail of the light field expansion area. The laser gain region, the light field expansion region and the spectrum purification region at the tail part of the light field expansion region are made of the same laser epitaxial material in the longitudinal direction, the laser gain region is adjacent to the light field expansion region along the horizontal light emitting direction, and the light field expansion region is adjacent to the spectrum purification region at the tail part of the light field expansion region along the horizontal light emitting direction; the longitudinal direction is the direction from the substrate to the contact layer.

The invention relates to the technical field of chip preparation, and provides a chip based on an annular photonic crystal and a preparation method thereof. The preparation method comprises the following steps: growing a nucleating layer on a substrate; growing a superlattice structure on one side, away from the substrate, of the nucleating layer; sequentially growing an n-type coating layer, an n-type waveguide layer, a quantum well and a p-type electron blocking layer on one side, deviating from the nucleating layer, of the superlattice structure; etching a plurality of annular cavities on the p-type electron barrier layer to form an annular photonic crystal; growing a p-type extension contact layer on one side, deviating from the quantum well, of the p-type electron blocking layer; and carrying out in-situ annealing treatment. According to the preparation method, the directivity of the photonic band gap can be effectively adjusted, uniform light waves in all directions on the side face can be formed, so that leakage of laser from a non-light-emitting area on the side face is restrained, the light emitting efficiency is improved, the annular photonic crystals are periodically distributed, and the light beam quality is effectively guaranteed.

A chip-scale mode-locked laser including a cavity including a gain medium for amplifying signal electromagnetic radiation (signal) through stimulated emission, the signal comprising a signal wavelength; and a passive or active mode-locking device to enforce pulse formation in the laser. The mode-locking device includes a thin-film waveguide having a thickness on the order of the signal wavelength so as to confine and guide the signal along the thin-film waveguide, and a material comprising a second-order nonlinear susceptibility to enable active or passive mode-locking of the signal. The mode-locking device leads to generation of pulses of the signal outputted from the mode-locked laser.

The present invention disclose a frequency-modulated external cavity laser device including a seed light source, a feedback loop external cavity, a light source frequency adjustment module, an FP cavity frequency adjustment module and an external cavity frequency adjustment module. The feedback loop external cavity includes an FP cavity; the light source frequency adjustment module is configured for adjusting an eigenfrequency of the seed light beam; the FP cavity frequency adjustment module is configured for adjusting a resonance frequency of the FP cavity; the external cavity frequency adjustment module is configured for adjusting a resonance frequency of the feedback loop external cavity; and the light source frequency adjustment module, the FP cavity frequency adjustment module and the external cavity frequency adjustment module perform cooperative modulation.

The invention discloses a low power consumption control method of a laser gas sensor, the laser gas sensor comprises a laser gas sensor, the laser gas sensor comprises a temperature measurement module, a thermoelectric refrigerating unit, an environmental parameter detection module, a microprocessor system and a power supply module; the thermoelectric refrigerating unit is used for controlling the temperature of the distributed feedback grating in the laser; the environment parameter detection module is used for detecting surrounding environment parameters of the laser gas sensor; the microprocessor system is in signal connection with the temperature measurement module, the thermoelectric refrigerating unit and the environmental parameter detection module and is used for controlling the working modes of the temperature measurement module, the thermoelectric refrigerating unit and the environmental parameter detection module; the power supply module is used for providing electric energy and comprises two circuit output ends, one circuit output end is connected with the microprocessor system, and the other circuit output end is connected with the temperature measurement module, the thermoelectric refrigerating unit and the environment parameter detection module. The method has the advantages of high detection precision and reduction of overall power consumption.

A tunable laser assembly housed in a single enclosure and a method of control is described wherein the tunable laser, pump and semiconductor optical amplifier do not share a common optical axis but are all aligned to optical waveguides on an intervening planar lightwave circuit (PLC). Wavelength monitoring circuitry is included on the PLC to enable monitoring and control of the tunable laser center wavelength and optical bandwidth. The design of the PLC does not introduce perturbations into the swept-source laser output spectrum that would cause artifacts in imaging applications such as optical coherence tomography (OCT).

Integrated laser arrays, photonic devices, packages, and systems are disclosed. An example integrated laser array includes first and second lasers, each laser including a light-emitter structure and a waveguide with a grating. In one aspect, effective pitches of the gratings of the first and second lasers are different by less than about 5 angstroms, while the gratings of the first and second lasers are fabricated with a resolution of at least 1 nanometer. In another aspect, each laser includes a waveguide with left and right sidewall gratings, effective widths of the waveguides of the first and second lasers are different, and an offset between the left and right sidewall gratings of the second laser is different from an offset between the left and right sidewall gratings of the first laser. Integrated laser arrays described herein may be particularly suitable for being implemented in dense wavelength division multiplexed systems.

Provided is an optical transmitter having high manufacturing stability and a high reflection suppression effect. In the optical transmitter, a distributed feedback (DFB) laser having an active region formed as a multiple quantum well that generates an optical gain by current injection and a diffraction grating, an electro-absorption (EA) modulator having an absorption region formed as a multiple quantum well having a composition different from a composition of the DFB laser, a semiconductor amplifier (SOA) having an active region having a same composition as the composition of the DFB laser, a bent waveguide that rotates a light propagation direction by an angle θwg, and a passive waveguide connected to the SOA and including a core having a band gap wavelength shorter than an oscillation wavelength of the DFB laser are monolithically integrated on one substrate. The passive waveguide has a tapered region and a narrow waveguide region. The tapered region converts a width W1 of the passive waveguide connected to the SOA into a width W2 of the narrow waveguide region, and the passive waveguide forms the angle θwg with respect to a normal line to an end surface of the substrate and is in contact with the end surface of the substrate.

The embodiment of the invention provides a laser array and a laser radar, and relates to the technical field of optical perception. The differential resistance of the laser array is adjustable, and the optical power of the output emitted laser is adjustable. The laser array comprises a first laser and a second laser; the first laser comprises a first reflecting layer, a first active layer and a second reflecting layer which are sequentially arranged along the epitaxial direction, and a first oxidation hole is formed in the second reflecting layer; the second laser comprises a third reflecting layer, a second active layer and a fourth reflecting layer which are sequentially arranged in the epitaxial direction, a second oxidation hole is formed in the fourth reflecting layer, and a light blocking layer is further arranged on the side, away from the second active layer, of the fourth reflecting layer. The projection of the light blocking layer on the second active layer is overlapped with the projection of the second oxidation hole on the second active layer; the first laser is electrically connected with the second laser.