1749results about "Laser optical resonator construction" patented technology

The invention relates to the technical field of semiconductor lasers, in particular to a laser based on a bimetallic Bragg grating and a top surface HR reflecting film, which comprises a gain chip, a first high-reflection HR film is plated on the left end surface of the gain chip, and a first anti-reflection AR film is plated on the right end surface of the gain chip. A metal Bragg grating waveguide is arranged on the right side of the gain chip, the right end face of the gain chip and the left end face of the metal Bragg grating waveguide are aligned and attached to form an outer cavity structure, and the left end face of the metal Bragg grating waveguide is plated with a second anti-reflection AR film. The right end face of the metal Bragg grating waveguide is plated with a third anti-reflection AR film. Performance test is carried out on the laser provided by the invention, and test results show that the line width is 0.6 kHz, the SMSR is 63dB, and the threshold current is 22mA, thereby verifying the effectiveness of the laser provided by the invention.

The invention relates to the technical field of laser, in particular to a dual-wavelength narrow-linewidth laser output device and method.The dual-wavelength narrow-linewidth laser output device comprises a semiconductor laser unit emitting linearly polarized light beams, and a light beam conversion lens is used for achieving conversion of semiconductor laser fast-axis light beams and semiconductor laser slow-axis light beams; the light beam conversion lens is used for collimating and compressing a semiconductor laser fast axis divergence angle, and the slow axis collimating lens is used for collimating and compressing a semiconductor laser slow axis divergence angle; the linearly polarized light beam is divided into a first light beam and a second light beam through the rectangular prism; the first light beam sequentially passes through a first volume Bragg grating, a first reflector, a half-wave plate and a polarization beam combiner; the second light beam sequentially passes through a second volume Bragg grating, a second reflector and a polarization beam combiner; the dual-wavelength narrow-linewidth semiconductor laser can solve the problems of precise regulation and control and power amplification of the central wavelength of the dual-wavelength narrow-linewidth semiconductor laser, has power expansibility, and realizes improvement of laser power by stacking a plurality of laser units in the vertical direction.

The invention relates to the technical field of semiconductor lasers, in particular to a laser based on a bimetallic Bragg grating and a top SiO2 waveguide layer, which comprises a gain chip, the left end face of the gain chip is plated with a first high-reflection HR film, and the right end face of the gain chip is plated with a first anti-reflection AR film; a metal Bragg grating waveguide is arranged on the right side of the gain chip, the right end face of the gain chip and the left end face of the metal Bragg grating waveguide are aligned and attached to form an outer cavity structure, and the left end face of the metal Bragg grating waveguide is plated with a second anti-reflection AR film. The right end face of the metal Bragg grating waveguide is plated with a third anti-reflection AR film. According to the invention, a temperature change test is carried out, and the wavelength drift is controlled to be + / -0.002 nm in a range of-40 DEG C to 85 DEG C; performance test results show that the line width is 0.6 kHz, the SMSR is 65 dB, and the threshold current is 22 mA.

The invention discloses a distributed feedback laser and a preparation method thereof, and relates to the field of lasers. The preparation method of the distributed feedback laser comprises the following steps: forming a lower limiting layer, a lower waveguide layer, an active layer, an upper waveguide layer, an upper limiting layer, a grating layer, a grating buried layer, a corrosion stop layer, an InP cladding, a barrier gradient layer, a contact layer and a sacrificial layer on a substrate, wherein the sacrificial layer comprises an InP layer and an InGaAs layer which are stacked in sequence; etching to form a ridge waveguide structure; forming an insulating layer; removing the insulating layer in a preset area on the ridge waveguide structure to expose the sacrificial layer; wherein the side wall of the InGaAs layer is completely exposed, and the side wall of the InP layer is partially exposed; and etching to remove the InGaAs layer and the InP layer to form an upper electrode layer and a lower electrode layer. According to the invention, the reliability and the electro-optical conversion efficiency of the distributed feedback laser can be improved.

The invention relates to the technical field of semiconductor lasers, in particular to a DFB laser based on a top metal grating, and the DFB laser comprises a gain chip, the left end face of the gain chip is plated with a high-reflection HR film, and the right end face of the gain chip is plated with an anti-reflection AR film; the upper end face of the gain chip is provided with a ridge optical waveguide, and the upper end face of the ridge optical waveguide is provided with a metal Bragg reflection grating layer. A self-heterodyne interference method (the line width of a local oscillator is smaller than 500 Hz) is adopted, and the measured value of the 3dB line width is 50 Hz (the measured value of a traditional DFB is 125 kHz). The mode purity degree is verified through a Lorenzian fitting broadening factor 1.15; the wavelength drift is less than 0.05 pm / DEG C within the range of-40 DEG C to 85 DEG C after compensation of the temperature compensation circuit. The temperature tuning coefficient is 0.08 pm / DEG C, the current tuning coefficient is 0.05 pm / mA, and the tuning coverage range is 1530-1545 nm.

The invention relates to the technical field of semiconductors, and discloses an edge-emitting semiconductor laser and a preparation method thereof, and the preparation method comprises the steps: forming a current injection region and a passivation layer at the side part of the current injection region on the surface of one side, opposite to an upper limiting layer, of a P-surface contact layer of a laser wafer; the laser wafer is divided into a plurality of laser chips in the vertical direction through a plurality of first cleavage channels and a plurality of second cleavage channels; forming a first P-type metal layer on the surface of the laser chip, the surface of the first cleavage channel and the surface of the first region of the second cleavage channel; forming a second P-type metal layer on the surface of one side of the first P-type metal layer of the laser chip through an electroplating process; the first P-type metal layer in the first region is used for communicating the surfaces of the plurality of laser chips; the laser wafer is cleaved into a plurality of edge-emitting semiconductor lasers. Compared with the prior art, the reliability and the yield of the edge-emitting high-power laser can be improved, and the cost of a preparation process is reduced.

The invention provides a distributed feedback laser with a double-layer grating structure, and relates to the technical field of lasers, the laser forms an InGaAlAs multi-quantum well active region, an upper sampling grating layer and a lower phase shift grating layer on an n-type InP substrate in sequence, the upper grating layer is designed based on a reconstruction equivalent chirp technology, and the lower phase shift grating layer is designed based on a reconstruction equivalent chirp technology. Two sections of asymmetric modulation areas with sampling periods linearly gradually changing in opposite directions are arranged in the axial direction of the resonant cavity, and the lower grating layer is a quarter-wave phase shift grating matched with the period of the upper seed grating. Through the synergistic effect of equivalent phase modulation and phase shift generated by the double-layer grating, the photon density distribution in the cavity can be improved, the longitudinal space hole burning effect can be weakened, the sensitivity to end face phase fluctuation can be reduced, high single-mode power and large modulation bandwidth can be realized in a wide temperature range, and the double-layer grating is suitable for a high-speed optical communication and coarse wavelength division multiplexing transmission system.

The invention discloses a full-locking integrated microcavity optical comb based on coherent population trapping spectral lines, and belongs to the technical field of integrated microcavity optical combs. The full-locking integrated micro-cavity optical comb comprises a laser generation module, a frequency reference subsystem and a micro-cavity optical comb system. The laser generation module is used for generating two paths of laser, the frequency reference subsystem modulates one path of laser, a modulated optical signal is emitted into the atomic gas chamber system, and after transmission light is demodulated and subjected to phase-locked amplification processing, an optical frequency signal and a microwave signal which are locked to an atomic spectral line are obtained; and the optical frequency signal is fed back to the laser generating module to realize optical frequency locking. And the microcavity optical comb system adopts a microwave signal generated by the frequency reference subsystem as a frequency reference, and modulates the other path of laser to serve as pump light to enter the optical microcavity, so that optical comb output of a soliton state in the optical microcavity is realized. According to the invention, a single quantum system is taken as a reference, the problem of full locking of the micro-cavity optical frequency comb is effectively solved, and the system integration degree is relatively high.

A chip-scale mode-locked laser including a cavity including a gain medium for amplifying signal electromagnetic radiation (signal) through stimulated emission, the signal comprising a signal wavelength; and a passive or active mode-locking device to enforce pulse formation in the laser. The mode-locking device includes a thin-film waveguide having a thickness on the order of the signal wavelength so as to confine and guide the signal along the thin-film waveguide, and a material comprising a second-order nonlinear susceptibility to enable active or passive mode-locking of the signal. The mode-locking device leads to generation of pulses of the signal outputted from the mode-locked laser.

The invention provides a topological polygonal laser. According to the device, a topological non-trivial domain formed by two-dimensional gyromagnetic photonic crystals is combined with a trivial domain, and an out-of-plane magnetic field externally applied to a sublattice A is started to open an energy band gap, so that a multi-position angular state is realized. The two-dimensional gyromagnetic photonic crystal opens or closes an out-of-plane magnetic field externally applied to the sub-lattice A so as to realize opening and closing of the angular state of the topological angular state laser. The topological multi-angular-state laser is realized by taking the two-dimensional gyromagnetic photonic crystal as a platform, and the topological multi-angular-state laser has the advantages that switching of angular states can be realized without changing the structure, and the laser is topologically protected and has topological robustness.

The invention discloses an external cavity tunable laser linewidth compression system for realizing wavelength phase locking based on mutual injection of gain chips. The external cavity tunable laser linewidth compression system comprises a red light semiconductor laser main gain chip, a first collimation optical system, a blazed grating, a tuning rotating mirror, a reflector, a power supply driving system and a double-path feedback amplification system, the double-path feedback amplification system comprises a first secondary gain chip, a second secondary gain chip, a second collimation optical system, a third collimation optical system and a polarization-free beam splitter prism; and the red light semiconductor laser main gain chip, the first secondary gain chip and the second secondary gain chip are all connected with the power supply driving system. Therefore, the technical problems of low output infrared light power, poor stability and narrow mode-hopping-free tuning range in the prior art are solved, and high-power, narrow-linewidth, high-stability and large-range mode-hopping-free continuous tuning red light output can be realized.

The invention discloses a low-divergence-angle narrow-linewidth high-power semiconductor laser. Relates to the technical field of semiconductor lasers, in particular to a low-divergence-angle narrow-linewidth high-power semiconductor laser. According to the invention, the parabolic waveguide structure is etched in the light field expansion area, and the metal reflector is introduced to realize a novel light field expansion and metal reflector integrated structure, and the transverse divergence angle of a laser mode is reduced through the expansion structure at the tail end of the waveguide. The laser comprises a laser gain area, a light field expansion area and a spectrum purification area at the tail of the light field expansion area. The laser gain region, the light field expansion region and the spectrum purification region at the tail part of the light field expansion region are made of the same laser epitaxial material in the longitudinal direction, the laser gain region is adjacent to the light field expansion region along the horizontal light emitting direction, and the light field expansion region is adjacent to the spectrum purification region at the tail part of the light field expansion region along the horizontal light emitting direction; the longitudinal direction is the direction from the substrate to the contact layer.

The invention relates to the technical field of chip preparation, and provides a chip based on an annular photonic crystal and a preparation method thereof. The preparation method comprises the following steps: growing a nucleating layer on a substrate; growing a superlattice structure on one side, away from the substrate, of the nucleating layer; sequentially growing an n-type coating layer, an n-type waveguide layer, a quantum well and a p-type electron blocking layer on one side, deviating from the nucleating layer, of the superlattice structure; etching a plurality of annular cavities on the p-type electron barrier layer to form an annular photonic crystal; growing a p-type extension contact layer on one side, deviating from the quantum well, of the p-type electron blocking layer; and carrying out in-situ annealing treatment. According to the preparation method, the directivity of the photonic band gap can be effectively adjusted, uniform light waves in all directions on the side face can be formed, so that leakage of laser from a non-light-emitting area on the side face is restrained, the light emitting efficiency is improved, the annular photonic crystals are periodically distributed, and the light beam quality is effectively guaranteed.

A chip-scale mode-locked laser including a cavity including a gain medium for amplifying signal electromagnetic radiation (signal) through stimulated emission, the signal comprising a signal wavelength; and a passive or active mode-locking device to enforce pulse formation in the laser. The mode-locking device includes a thin-film waveguide having a thickness on the order of the signal wavelength so as to confine and guide the signal along the thin-film waveguide, and a material comprising a second-order nonlinear susceptibility to enable active or passive mode-locking of the signal. The mode-locking device leads to generation of pulses of the signal outputted from the mode-locked laser.

The invention discloses a low power consumption control method of a laser gas sensor, the laser gas sensor comprises a laser gas sensor, the laser gas sensor comprises a temperature measurement module, a thermoelectric refrigerating unit, an environmental parameter detection module, a microprocessor system and a power supply module; the thermoelectric refrigerating unit is used for controlling the temperature of the distributed feedback grating in the laser; the environment parameter detection module is used for detecting surrounding environment parameters of the laser gas sensor; the microprocessor system is in signal connection with the temperature measurement module, the thermoelectric refrigerating unit and the environmental parameter detection module and is used for controlling the working modes of the temperature measurement module, the thermoelectric refrigerating unit and the environmental parameter detection module; the power supply module is used for providing electric energy and comprises two circuit output ends, one circuit output end is connected with the microprocessor system, and the other circuit output end is connected with the temperature measurement module, the thermoelectric refrigerating unit and the environment parameter detection module. The method has the advantages of high detection precision and reduction of overall power consumption.

A tunable laser assembly housed in a single enclosure and a method of control is described wherein the tunable laser, pump and semiconductor optical amplifier do not share a common optical axis but are all aligned to optical waveguides on an intervening planar lightwave circuit (PLC). Wavelength monitoring circuitry is included on the PLC to enable monitoring and control of the tunable laser center wavelength and optical bandwidth. The design of the PLC does not introduce perturbations into the swept-source laser output spectrum that would cause artifacts in imaging applications such as optical coherence tomography (OCT).

Heterogeneous photonic circuits comprise a gain section optically coupled to a photonics section. The gain section can include at least one gain waveguide which can be formed from a III-V semiconductor material to provide optical gain. The gain waveguide can be coupled to optical components in the photonics section to form an integrated pump module. The photonics section can include a light-generating photonic circuit, which can comprise at least one waveguide doped with a rare-earth ion or transition-metal ion. Output from the integrated pump module and / or the light-generating photonic circuit can be tunable. Tuning can be implemented with feedback control.

The invention relates to the technical field of semiconductor lasers, in particular to an ultra-narrow linewidth wavelength-adjustable external cavity laser based on a planar metal grating, which comprises a gain chip, and the left end face and the right end face of the gain chip are respectively plated with a high reflection film and a first antireflection film; a planar metal grating waveguide is arranged on the right side of the gain chip, the right end face of the gain chip is aligned and attached to the left end face of the planar metal grating waveguide, and a second antireflection film and a third antireflection film are plated on the left end face and the right end face of the planar metal grating waveguide respectively; the planar metal grating waveguide comprises a grating waveguide substrate, a ridge optical waveguide is arranged on the upper portion of the grating waveguide substrate, an annular resonance optical waveguide is arranged on the front side of the ridge optical waveguide, a planar metal grating is arranged on the upper portion of the ridge optical waveguide, and a top covering layer is arranged on the upper portion of the planar metal grating. Through the centimeter-level metal grating and the low-loss coupling structure, light beam quality with 3dB line width less than 700Hz and M2 less than 0.9 is realized.

An optical semiconductor chip of the present disclosure includes a high frequency line between an electrode pad receiving a modulation signal and a modulation electrode on the optical waveguide having a light absorption layer. The depletion layer capacitance generated in the light absorption layer is canceled by an inductor component of the high frequency line. When a portion directly below the high frequency line is embedded with a low-dielectric-constant material or is made hollow, the parasitic capacitance is further reduced. The high frequency line may have a zigzag shape as well as a linear shape. The electrode pad on the optical semiconductor chip can be connected to other substrates including RF lines for modulation signal input by bumps or wire bonding.

The utility model relates to the technical field of lasers, and discloses a high-slope-efficiency surface grating surface emitting laser which comprises a substrate, a lower waveguide layer, an active layer and an upper waveguide layer from bottom to top along the cross section. A ridge-shaped waveguide is formed in the middle area of the uppermost layer of the upper waveguide layer, and a Bragg grating is etched on the surface of the ridge-shaped waveguide; the Bragg grating comprises a section of second-order grating located in the middle and two sections of first-order gratings located at the two ends; a lambda / 4 phase shift is arranged in the second-order grating; the lambda / 4 phase shift is located in an etching area or a non-etching area of the first-order grating closest to the second-order grating; when the lambda / 4 phase shift is located in the etching region of the first-order grating closest to the second-order grating, the upward diffraction light power of the second-order grating is maximum, and the downward diffraction light power is minimum; when the lambda / 4 phase shift is located in the non-etching area of the first-order grating closest to the second-order grating, the upward diffraction light power of the second-order grating is minimum, and the downward diffraction light power of the second-order grating is maximum. According to the invention, high-slope efficiency lasing can be realized.

The invention provides a state-adjustable double-gain optical structure on a silicon substrate and a laser radar system, and relates to the technical field of laser radars. The adjustable double-gain optical structure on the silicon substrate comprises a first reflection type semiconductor optical amplifier, a second reflection type semiconductor optical amplifier, a first phase modulator, a second phase modulator, a first optical coupler, a third phase modulator, a fourth phase modulator, a second optical coupler, a first port and a second port. A reflected light electric field and a transmission light electric field are adjusted by adjusting the phase difference between the two reflection type semiconductor optical amplifiers. A laser radar system is formed by a plurality of state-adjustable double-gain optical structures on a silicon substrate, a transmitting optical phased array, a receiving optical phased array, a balanced photoelectric detector and the like, the transmitting power of the transmitting optical phased array is flexibly adjusted, meanwhile, a plurality of reflection type semiconductor optical amplifiers are adopted, the laser radar power is remarkably improved, and the laser radar system is suitable for large-scale popularization and application. And long-distance detection of the laser radar system based on the optical phased array is realized.

A continuous-wave perovskite polariton laser device, including an optical microcavity, a spacer layer, and a gain medium. The gain medium is a perovskite material or a composite material containing perovskite, in a form of thin film, microcrystal, phosphor, nanocrystal, quantum dot, or single crystal. The perovskite gain medium is prepared by solution process or vacuum deposition technique, and is combined with an optical resonator. By exploiting the strong interaction between excitons and photons, a steady-state exciton-polariton condensation is formed, enabling the generation of continuous-wave polariton laser emission with a low threshold. The laser device can achieve low-threshold continuous-wave or pulsed lasing emission at room temperature under various light sources pumping or electrical excitation. Its threshold is 1 to 3 orders of magnitude lower than that of conventional semiconductor lasers, with an optimized threshold as low as 0.1 to 1 W / cm2, representing a novel ultralow-power coherent light source technology.

A two-dimensional photonic crystal surface emitting laser includes an n-doped substrate, an n-doped cladding layer, an active layer, a photonic crystal layer, a p-doped cladding layer and a p-doped contact layer arranged in sequence from top to bottom. The photonic crystal layer includes a base material and a plurality of unit cells arranged periodically, each unit cell includes a first different-refractive index region, a second different-refractive index region and a third different-refractive index region that have a different refractive index from the base material. The surface emitting laser based on the photonic crystal structure may maintain single-mode operating characteristics of a device under a large mode field area, so that a high-power single-mode surface emitting laser may be achieved.

The embodiment of the application provides an optical amplifier, an optical assembly, an optical module, an optical communication network system and a detection device, relates to the technical field of semiconductors, and is used for solving the problem of one-way light emission of the optical amplifier. The optical amplifier comprises a waveguide and a photonic crystal. The waveguide comprises a core region and a cladding region arranged at the periphery of the core region. The waveguide further comprises an incident light side, a first light emission side and a second light emission side. The photonic crystal is arranged in the cladding region of the waveguide. The core region is located between the incident light side and the first light emission side, and the photonic crystal is located between the second light emission side and the core region. The photonic crystal is used for receiving incident light from the incident light side and emitting first emitted light and second emitted light. The first emitted light is emitted from the first light emission side, and the second emitted light is emitted from the second light emission side.

The invention belongs to the technical field of optical communication, and particularly relates to a narrow linewidth laser based on a cascaded micro-ring resonant cavity. The laser comprises a semiconductor laser inner cavity module, a gain chip module, a phase shifter, a cascade micro-ring resonant cavity module, a thermal tuning module and an outer cavity reflector. The gain chip is combined with an III-V group material at the top of the silicon waveguide through heterogeneous integration, and adopts an InAlGaAs quantum well to provide high gain; the phase shifter is used for matching the lasing wavelength with the resonant wavelength; the cascaded micro-ring resonant cavity is formed by cascading three micro-rings, and tuning of the laser is realized based on a vernier effect; the thermal tuning module is composed of three semi-annular metal strips and a straight waveguide-shaped metal strip. The outer cavity reflector module adopts a Sagnac ring structure; the laser inner cavity, the gain chip, the cascade micro-ring resonant cavity and the outer cavity reflector are directly connected through silicon waveguides. The laser has the characteristics of narrow linewidth and wide tuning range, is easy to highly integrate and interconnect, and has important application value.

The invention belongs to the field of solid lasers, and particularly relates to a laser for realizing high-power pump beam quality enhancement based on multi-stack heat transfer, which comprises a pump module, a pump shaping coupling module, a multi-stack crystal, a cube-corner prism, an output mirror and a cooling device. And the multi-laminated crystal adopts a high-thermal-conductivity diamond film, so that transverse rapid diffusion of heat is realized, local heat accumulation and temperature rise are relieved, wavefront distortion and a thermal lens effect caused by thermally induced refractive index change are reduced, and the stability of a laser mode is improved. The cube-corner prism is used as a resonant cavity mirror surface, can automatically compensate angle deviation, optimizes mode matching in the cavity, has a synergistic effect with a zigzag total internal reflection path in the crystal, further balances a heat affected zone, improves light field distribution, and remarkably improves light beam uniformity, stability and TEM00 mode quality. The structure is high in adaptability, is suitable for various wavelengths, pumping modes and thermal loads, and assists the laser to realize miniaturized, high-integration and high-performance output.

An optical transmitter includes a distributed feedback (DFB) laser having an active region formed as a multiple quantum well (MQW) and a diffraction grating, an electro-absorption (EA) modulator having an absorption region formed as a MQW having a composition different from a composition of the DFB laser, a semiconductor amplifier (SOA) having an active region having a same composition as the composition of the DFB laser, a bent waveguide that rotates a light propagation direction, and a passive waveguide connected to the SOA and including a core having a band gap wavelength shorter than an oscillation wavelength of the DFB laser. A tapered region of the passive waveguide converts a width W1 of the passive waveguide connected to the SOA into a width W2 of a narrow waveguide region of the passive waveguide, and the passive waveguide is in contact with the end surface of the substrate.

The invention relates to the technical field of optoelectronic devices, in particular to a laser based on two different gratings and a metal grating with a phase interval of lambda / 2, which comprises a gain chip, a gain chip optical waveguide, an optical waveguide substrate, an optical waveguide, an annular resonant optical waveguide and a metal BRAGG reflecting grating. A unique outer cavity structure is adopted, a traditional interlayer semiconductor grating is abandoned, a top metal grating is adopted, a traditional DFB sandwich type secondary epitaxy manufacturing process is greatly simplified and avoided, the production cost is reduced, particularly, the metal grating is divided into two parts with similar but different grating constants, and the phase positions of the two gratings are pulled by lambda / 2, so that the performance of the DFB is improved. According to the design, the side mode rejection ratio (SMSR) of laser beams can be effectively improved, the laser line width is compressed, a guarantee is provided for stable work of the laser in a high-performance application scene, and the grating reflection efficiency is effectively improved by combining a'mouth-to-mouth 'coupling butt joint mode of the gain chip and the optical waveguide substrate.

The invention relates to the technical field of lasers, in particular to a temperature self-adjusting method and device for a DFB laser with a TEC, and the method comprises the steps: collecting the temperature of the DFB laser at each moment, and the voltage and current of a TEC circuit at each moment; determining a proportional gain compensation item of the PID controller in each parameter adjustment period; analyzing the difference between the temperature change trend of the DFB laser in the local time period in each parameter adjustment period and the overall temperature change trend, and determining an integral gain compensation item of a PID controller in each parameter adjustment period; based on the fluctuation of the instantaneous frequency of the voltage and the current in the TEC circuit in each parameter adjustment period, obtaining a differential gain compensation item of a PID controller in each parameter adjustment period; and adjusting parameters of the PID controller are respectively corrected by using the proportional gain compensation item, the integral gain compensation item and the differential gain compensation item so as to adjust the temperature of the DFB laser. Therefore, the stability of temperature adjustment of the DFB laser is improved.

The invention relates to the technical field of semiconductor lasers, in particular to a multi-wavelength semiconductor laser. Comprising a semiconductor PN junction, and an inclined array waveguide region, a beam splitting MMI structure, a gain array waveguide, a beam combining MMI structure and a super-symmetric waveguide array which are sequentially arranged on the surface of the semiconductor PN junction in the longitudinal mode light beam transmission direction; the inclined array waveguide region comprises Bragg reflection gratings and inclined array waveguides, the Bragg reflection gratings are arranged on ridge surfaces of inlet ends of the inclined array waveguides, cavity lengths of waveguides in the inclined array waveguides are different, and the Bragg reflection gratings are parallel; seed sources output by the inclined array waveguide region are injected into the beam splitting MMI structure, and the seed sources are uniformly distributed and coupled into each waveguide of the gain array waveguide; the gain array waveguide is a parallel waveguide; the super-symmetric waveguide array is used for providing further gain to a fundamental mode and loss to a high-order mode. The antenna has the advantages of simple preparation, high gain, high single-mode performance, small size and high integration.