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1861results about "Laser optical resonator construction" patented technology

Coolerless photonic integrated circuits (PICs) for WDM transmission networks and PICs operable with a floating signal channel grid changing with temperature but with fixed channel spacing in the floating grid

A coolerless photonic integrated circuit (PIC), such as a semiconductor electro-absorption modulator/laser (EML) or a coolerless optical transmitter photonic integrated circuit (TxPIC), may be operated over a wide temperature range at temperatures higher then room temperature without the need for ambient cooling or hermetic packaging. Since there is large scale integration of N optical transmission signal WDM channels on a TxPIC chip, a new DWDM system approach with novel sensing schemes and adaptive algorithms provides intelligent control of the PIC to optimize its performance and to allow optical transmitter and receiver modules in DWDM systems to operate uncooled. Moreover, the wavelength grid of the on-chip channel laser sources may thermally float within a WDM wavelength band where the individual emission wavelengths of the laser sources are not fixed to wavelength peaks along a standardized wavelength grid but rather may move about with changes in ambient temperature. However, control is maintained such that the channel spectral spacing between channels across multiple signal channels, whether such spacing is periodic or aperiodic, between adjacent laser sources in the thermally floating wavelength grid are maintained in a fixed relationship. Means are then provided at an optical receiver to discover and lock onto floating wavelength grid of transmitted WDM signals and thereafter demultiplex the transmitted WDM signals for OE conversion.

Wavelength discretely tunable semiconductor laser

A wavelength discretely tunable semiconductor laser that addresses wide wavelength tuning range, is mode hopping free, has high output power, has fast wavelength switching time, is wavelength locking free and is relatively simple. Four exemplary embodiments disclosed herein utilize a wavelength discretely tunable semiconductor laser that comprises a discretely tunable filter and laser amplifier. In the first embodiment, the tuning element comprises a pair of cascade Fabry-Perot filters, each having a plurality of characteristic narrow transmission passbands that pass only the cavity mode under the passband. The spacing between the narrow transmission passbands are slightly different in one filter from the other filter so that only one passband from each filter can be overlapped in any given condition over the entire active element gain spectral range, thereby permitting lasing only at a single cavity mode passed by the cascade double filters. One of the two etalon filters can be made with a plurality of transmission passbands predetermined by industry, application and international standards, making this element an intra-cavity wavelength reference and eliminating further wavelength locking needs for the tunable laser. In a second embodiment, one of the two etalons is replaced by a wedge filter. The filter optical path change and thus the transmission passband shift are achieved by translating the wedge filter in a direction perpendicular to the optical axis. In a third embodiment, one of the two etalon filters is replaced by a polarization interference filter. The polarization interference filter consists of an electro-optically-tunable birefringent waveplate, a fixed birefringent waveplate, the laser cavity and T.E. polarization light emitted from the laser diode. In a fourth embodiment, the laser and wavelength tuning structure are integrated on a semiconductor substrate by epitaxy processes.

Defect-free group iii - nitride nanostructures and devices using pulsed and non-pulsed growth techniques

Exemplary embodiments provide semiconductor devices including high-quality (i.e., defect free) Group III—Nitride nanostructures and uniform Group III—Nitride nanostructure arrays as well as their scalable processes for manufacturing, where the position, orientation, cross-sectional features, length and the crystallinity of each nanostructure can be precisely controlled. A pulsed growth mode can be used to fabricate the disclosed Group III—Nitride nanostructures and/or nanostructure arrays providing a uniform length of about 0.01-20 micrometers (μm) with constant cross-sectional features including an exemplary diameter of about 10 nanometers (nm)-500 micrometers (μm). Furthermore, core-shell nanostructure/MQW active structures can be formed by a core-shell growth on the non-polar sidewalls of each nanostructure and can be configured in nanoscale photoelectronic devices such as nanostructure LEDs and/or nanostructure lasers to provide tremendously-high efficiencies. Additional growth mode transitions from the pulsed to the non-pulsed growth mode and subsequent transitions from non-pulsed to pulsed growth mode are employed in order to incorporate certain group III—Nitride compounds more efficiently into the nanostructures and form devices of the designed shape, morphology and stochiometric composition. In addition, high-quality group III—Nitride substrate structures can be formed by coalescing the plurality of group III—Nitride nanostructures and/or nanostructure arrays to facilitate the fabrication of visible LEDs and lasers.
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