A
wavelength discretely tunable
semiconductor laser that addresses wide
wavelength tuning range, is
mode hopping free, has high output power, has fast
wavelength switching time, is wavelength locking free and is relatively simple. Four exemplary embodiments disclosed herein utilize a wavelength discretely tunable
semiconductor laser that comprises a discretely tunable filter and
laser amplifier. In the first embodiment, the tuning element comprises a pair of
cascade Fabry-Perot filters, each having a plurality of characteristic narrow transmission passbands that pass only the cavity mode under the
passband. The spacing between the narrow transmission passbands are slightly different in one filter from the other filter so that only one
passband from each filter can be overlapped in any given condition over the entire active element
gain spectral range, thereby permitting lasing only at a single cavity mode passed by the
cascade double filters. One of the two etalon filters can be made with a plurality of transmission passbands predetermined by industry, application and international standards, making this element an intra-cavity wavelength reference and eliminating further wavelength locking needs for the
tunable laser. In a second embodiment, one of the two etalons is replaced by a wedge filter. The filter
optical path change and thus the transmission
passband shift are achieved by translating the wedge filter in a direction perpendicular to the
optical axis. In a third embodiment, one of the two etalon filters is replaced by a polarization
interference filter. The polarization
interference filter consists of an electro-optically-tunable birefringent
waveplate, a fixed birefringent
waveplate, the laser cavity and T.E. polarization light emitted from the
laser diode. In a fourth embodiment, the laser and wavelength tuning structure are integrated on a
semiconductor substrate by
epitaxy processes.