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32results about How to "Increase tuning speed" patented technology

Dynamic switching between digital TV services

A method for creating variants of a DTV service, a method which is simpler than the method defined in GBS0600, and the method can handle all use-case scenarios for simulcast linking in a way almost equal to that defined in GBS0600. The method introduces switching between a mother service and a variant service, the mother service being a default service to which a receiver should tune, and the variant service being a service selected at a receiver side and linked to the mother service by a service link defining a switching relation between the mother service and the variant service. The method is defined by including switching information into the data-stream of the mother service, receiving the mother service data-stream, reading the switching information, and switching from the mother service to the variant service accordingly. The switching information can be carried in EPG data and thus utilize existing data structures. EPG data of the mother service, e.g. in the form of EIT data, can be used to carry switching data, expect for variant service events different from the mother service, where the EPG/EIT data are preferably cross-carried by the mother and variant service. Preferably, the receiver selects which one of a plurality of possible variant service to switch to, e.g. based on receiver capabilities and/or user access rights. Thus, EIT carriage efficiency for services with a large degree of sharing is high, and it offers advantages in tuning speed. Further, the method will lead to simpler and consistent receiver implementations.
Owner:KONINKLIJKE PHILIPS ELECTRONICS NV

Doping structure for improving efficiency and bandwidth of silicon-based electro-optic tuning device

ActiveCN104393133AIncreased intrinsic electrical bandwidthIncrease tuning speedNon-linear opticsSemiconductor devicesP type dopingInsertion loss
The invention discloses a doping structure for improving efficiency and bandwidth of a silicon-based electro-optic tuning device. The doping structure comprises a P+ type doping area arranged on the outer ridge area on one side close to the edge and is in ohmic contact with the above metal; A P type doping area is arranged on the outer ridge area connected with the P+ type doping area and extends to the inner ridge area; An N+ type doping area is arranged on the outer ridge area on the other side close to the edge and is in ohimic contact with the above metal; A N-type doping area is arranged on the outer ridge area connected with the N+ type doping area and extends to the inner ridge area and is complementary with the P type doping area; An almost-I type doping area is arranged between the P type doping area and the N type doping area and forms an almost PIN knot with the P type doping area and the N type doping area. By means of the doping structure, the silicon-based electro-optic tuning device is improved in the aspects of the modulator speed, efficiency and insertion loss, the cost is reduced, the requirement of the ion implantation process for the mask alignment accuracy is reduced, and large-scale manufacture of the device is facilitated.
Owner:WUHAN POST & TELECOMM RES INST CO LTD

Dynamic wavelength identification method and device with fast temperature tuning of laser diode

The invention relates to a dynamic wavelength identification method and a device with fast temperature tuning of a laser diode, the periodic current is imposed on a thermoelectric refrigerator in the laser diode component for realizing the fast scanning of the temperature of a laser; the real-time resistance value is obtained by sensing the voltage values at two ends of an NTC thermosensitive resistor in the laser diode component, the resistance value is converted to the real-time temperature value of the thermosensitive resistor, the temperature compensation value is figured out through the temperature change rate on the thermosensitive resistor, and then the pre-estimated temperature of a laser cavity is obtained; and a known tuning transfer function of the laser diode is utilized to obtain the real-time output wavelength of the laser according to the format lambda (t) is equal to F lambda (i(t), T(t)). The on-line identification with open-loop drive and advanced algorithm is adopted for simplifying the hardware structure of a system and reducing the cost of the system. The method and the device can greatly improve the temperature tuning rate, and give out the dynamic wavelength during the temperature fast tuning process in an on-line manner, and the test inspection proves that the identification precision of the wavelength can achieve the pm order and be not affected by the fluctuations of the environmental temperature.
Owner:TIANJIN UNIV

Superposed sequential setting method of inhibition band parallel reactor compensation line three-phase reclosing overvoltage

The invention relates to a superposed sequential setting method of inhibition band parallel reactor compensation line three-phase reclosing overvoltage, belonging to the power system relay protection technology field. The method comprises the following steps: by utilizing a WARD equivalent method, calculating equivalent impedances of a head end bus and a tail end bus of a fault line, and determining a large power supply side and a small power supply side; according to a terminal voltage size of a fault phase after trip-out, discriminating a fault property; when the fault is a transient fault, if line actual compensativity is less than critical compensativity, superposing the large power supply side, conversely, superposing the small power supply side; if the fault is a permanent fault, calculating an arithmetic product of a power frequency voltage step-up ratio when superposing the large power supply sides first and a healthy phase voltage step-up ratio caused by a single-phase ground fault, calculating an arithmetic product of a power frequency voltage step-up ratio when superposing the small power supply sides first and a healthy phase voltage step-up ratio caused by a single-phase ground fault, comparing the two arithmetic products, and superposing a side with a smeller arithmetic product. According to the method, line critical compensativity is only related to line length and a phase shift coefficient, raising superposed sequential setting speed in the transient fault is facilitated, amount of calculation is small, the method is simple and feasible, and a line single-phase fault can be reduced effectively to carry out overvoltage level of three-phase reclosing.
Owner:KUNMING UNIV OF SCI & TECH

Electrooptical adjustable filter based on sub-wavelength high-contrast grating

ActiveCN107065233AImprove transmittanceImplement tunable filteringNon-linear opticsGratingFiltration
The invention discloses an electrooptical adjustable filter based on a sub-wavelength high-contrast grating and relates to the technical field of photoelectrons. The electrooptical adjustable filter comprises a substrate, an interdigital sub-wavelength grating, a transparent conduction layer and electrodes that are stacked sequentially from the bottom up, wherein an electrooptic material layer flush with the transparent conduction layer is arranged at an exposed part on the surface of the substrate; the two electrodes are connected with an external circuit to form an electric field between grating ridges; and a refractive index of a material of the interdigital sub-wavelength grating is much greater than those of materials of the substrate, the photoelectric material layer and the transparent conduction layer. The filter is reasonable in structural design, and can obtain high quality factor resonance and an adjustable filtration spectral range via reasonable selection of grating parameters, and tune filtration wavelength via voltage modulation; further, the refractive index of an electrooptic material is regulated based on an electric field effect; and compared with a mechanical adjustable filter, the tuning precision and tuning speed are greatly improved and increased. The filter is simple in structure, the materials are easy to obtain, and large-scale production and application are facilitated.
Owner:UNIV OF ELECTRONICS SCI & TECH OF CHINA

Dynamic wavelength identification method and device with fast temperature tuning of laser diode

The invention relates to a dynamic wavelength identification method and a device with fast temperature tuning of a laser diode, the periodic current is imposed on a thermoelectric refrigerator in the laser diode component for realizing the fast scanning of the temperature of a laser; the real-time resistance value is obtained by sensing the voltage values at two ends of an NTC thermosensitive resistor in the laser diode component, the resistance value is converted to the real-time temperature value of the thermosensitive resistor, the temperature compensation value is figured out through the temperature change rate on the thermosensitive resistor, and then the pre-estimated temperature of a laser cavity is obtained; and a known tuning transfer function of the laser diode is utilized to obtain the real-time output wavelength of the laser according to the format lambda (t) is equal to F lambda (i(t), T(t)). The on-line identification with open-loop drive and advanced algorithm is adopted for simplifying the hardware structure of a system and reducing the cost of the system. The method and the device can greatly improve the temperature tuning rate, and give out the dynamic wavelengthduring the temperature fast tuning process in an on-line manner, and the test inspection proves that the identification precision of the wavelength can achieve the pm order and be not affected by thefluctuations of the environmental temperature.
Owner:TIANJIN UNIV

Reclosing sequence setting method for suppressing overvoltage of three-phase reclosing line with shunt reactor compensation

The invention relates to a superposed sequential setting method of inhibition band parallel reactor compensation line three-phase reclosing overvoltage, belonging to the power system relay protection technology field. The method comprises the following steps: by utilizing a WARD equivalent method, calculating equivalent impedances of a head end bus and a tail end bus of a fault line, and determining a large power supply side and a small power supply side; according to a terminal voltage size of a fault phase after trip-out, discriminating a fault property; when the fault is a transient fault, if line actual compensativity is less than critical compensativity, superposing the large power supply side, conversely, superposing the small power supply side; if the fault is a permanent fault, calculating an arithmetic product of a power frequency voltage step-up ratio when superposing the large power supply sides first and a healthy phase voltage step-up ratio caused by a single-phase ground fault, calculating an arithmetic product of a power frequency voltage step-up ratio when superposing the small power supply sides first and a healthy phase voltage step-up ratio caused by a single-phase ground fault, comparing the two arithmetic products, and superposing a side with a smeller arithmetic product. According to the method, line critical compensativity is only related to line length and a phase shift coefficient, raising superposed sequential setting speed in the transient fault is facilitated, amount of calculation is small, the method is simple and feasible, and a line single-phase fault can be reduced effectively to carry out overvoltage level of three-phase reclosing.
Owner:KUNMING UNIV OF SCI & TECH

Tunable resonant cavity based on adjustable capacitor

The invention belongs to the field of communication and provides a tunable resonant cavity based on an adjustable capacitor. The cavity comprises a class coaxial structure metal cavity, an insulating medium ring, a ferroelectric film, a capacitor electrode and a tuning electrode; the top of the class coaxial structure metal cavity is provided with a snap ring filled with the insulating medium ring; the ferroelectric film is arranged in the center of the top of the metal cavity, and the radius is larger than or equal to the inner radius of the insulating medium ring; the tuning electrode is arranged in the center of the top of the ferroelectric film; the capacitor electrode is an annular electrode arranged around the tuning electrode, the outer periphery of the capacitor electrode is connected with the metal cavity, and a parallel capacitor plate structure is formed by the inner periphery of the capacitor electrode, the ferroelectric film and the metal cavity. According to the tunable resonant cavity based on the adjustable capacitor, by the adoption of the adjustable capacitor prepared from the ferroelectric film, firstly, the problem of mechanical fatigue is avoided, the service life of the resonant cavity is prolonged; secondly, the tuning voltage only needs to reach 30 volts, and the tuning is more simple and convenient; finally, because of the extremely high reaction speed of ferroelectric materials, the tuning speed of the resonant cavity is also increased.
Owner:成都迈科科技有限公司

A Tunable Resonant Cavity Based on Tunable Capacitance

The invention belongs to the field of communication, and provides an adjustable resonant cavity based on an adjustable capacitance, including a metal cavity with a similar coaxial structure, an insulating dielectric ring, a ferroelectric film, a capacitor electrode and a tuning electrode; the metal cavity with a similar coaxial structure There is an open ring on the top, and the insulating medium ring is filled into the open ring; the ferroelectric film is set at the center above the metal cavity, and the radius is greater than or equal to the inner radius of the insulating medium ring; the tuning electrode is set at the center above the ferroelectric film; the capacitor electrode is The ring electrode is arranged around the tuning electrode, and the outer edge of the capacitor electrode is connected with the metal cavity, and the inner edge of the capacitor electrode forms a parallel capacitor plate structure with the ferroelectric thin film and the metal cavity. The present invention adopts the adjustable capacitor made of ferroelectric thin film; firstly, the problem of mechanical fatigue is avoided, and the service life of the resonant cavity is prolonged; secondly, the tuning voltage only needs to reach 30 volts, which makes tuning easier; finally, due to the ferroelectric material The extremely fast response speed also increases the tuning speed of the resonant cavity.
Owner:成都迈科科技有限公司

Wavelength-tunable double-ring structure plasmonic laser based on metamaterial antenna

The invention discloses a wavelength-tunable double-ring structure plasmon laser based on a meta-material antenna. The laser comprises the components of a top patch antenna, a metal transmission wire,a meta-material antenna dielectric layer, a cladding of a laser resonant cavity, a silicon substrate, a semiconductor-insulator-metal stripe-carried sandwich structure based deep sub-wavelength plason waveguide (SIMS waveguide in short) and a metal split ring resonator array. According to the wavelength-tunable double-ring structure plasmon laser, the meta-material antenna is used as a modulatorand realizes high-efficiency modulation to the wavelength of the plasmon laser by means of a microwave in a sub-wavelength scale; and a resonant chamber with a double-ring structure is utilized for realizing tuning of wavelength output from the laser. The laser has advantages of compact structure, simple manufacture process and high controllability of output light. The novel meta-material photoelectric device in which microwave signal absorption and light wave modulation are integrated is constructed. A new technological principle and a new realizing approach are supplied for miniaturization and integration of a high-performance microwave photon device in future.
Owner:SOUTHEAST UNIV
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