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4611 results about "Insertion loss" patented technology

In telecommunications, insertion loss is the loss of signal power resulting from the insertion of a device in a transmission line or optical fiber and is usually expressed in decibels (dB). If the power transmitted to the load before insertion is PT and the power received by the load after insertion is PR, then the insertion loss in dB is given by, IL(dB)=10log₁₀PT/PR

Switch circuit and method of switching radio frequency signals

A novel RF buffer circuit adapted for use with an RF switch circuit and method for switching RF signals is described. The RF switch circuit is fabricated in a silicon-on-insulator (SOI) technology. The RF switch includes pairs of switching and shunting transistor groupings used to alternatively couple RF input signals to a common RF node. The switching and shunting transistor grouping pairs are controlled by a switching control voltage (SW) and its inverse (SW_). The switching and shunting transistor groupings comprise one or more MOSFET transistors connected together in a “stacked” or serial configuration. The stacking of transistor grouping devices, and associated gate resistors, increase the breakdown voltage across the series connected switch transistors and operate to improve RF switch compression. A fully integrated RF switch is described including digital control logic and a negative voltage generator integrated together with the RF switch elements. In one embodiment, the fully integrated RF switch includes a built-in oscillator, a charge pump circuit, CMOS logic circuitry, level-shifting and voltage divider circuits, and an RF buffer circuit. Several embodiments of the charge pump, level shifting, voltage divider, and RF buffer circuits are described. The inventive RF switch provides improvements in insertion loss, switch isolation, and switch compression.
Owner:PSEMI CORP

Rectangular waveguide directional coupler

The invention discloses a rectangular waveguide directional coupler. The rectangular waveguide directional coupler comprises a main rectangular waveguide serving as a main microwave channel, a sub-rectangular waveguide serving as a sampling signal channel, and coupling holes serving as coupling channels, wherein the main mode H-surface of the main rectangular waveguide is parallel to that of the sub-rectangular waveguide; the main rectangular waveguide is isolated from the sub-rectangular waveguide; the main rectangular waveguide is communicated with the sub-rectangular waveguide through one or two coupling holes; at least one coupling hole includes a hollow coupling pipe attached with the sidewall of the main rectangular waveguide or/and the sidewall of the sub-rectangular waveguide; the sidewall of the hollow coupling pipe close to the rectangular waveguide is connected with a coupling cavity with three opening ends; and the coupling cavity is communicated with the hollow coupling pipe, and is located between and communicated with the main rectangular waveguide and the sub-rectangular waveguide. The rectangular waveguide directional coupler provided by the invention is compact in structure and easy in processing, and has the outstanding advantage of low insertion loss in comparison with the common single-hole directional coupler, particularly in the millimeter wave band and the Terahertz wave band.
Owner:成都赛纳赛德科技有限公司

Switch circuit and method of switching radio frequency signals

InactiveUS20050017789A1Improving RF switch isolationRaise the compression pointTransistorSolid-state devicesMOSFETEngineering
A novel RF buffer circuit adapted for use with an RF switch circuit and method for switching RF signals is described. The RF switch circuit is fabricated in a silicon-on-insulator (SOI) technology. The RF switch includes pairs of switching and shunting transistor groupings used to alternatively couple RF input signals to a common RF node. The switching and shunting transistor grouping pairs are controlled by a switching control voltage (SW) and its inverse (SW_). The switching and shunting transistor groupings comprise one or more MOSFET transistors connected together in a “stacked” or serial configuration. The stacking of transistor grouping devices, and associated gate resistors, increase the breakdown voltage across the series connected switch transistors and operate to improve RF switch compression. A fully integrated RF switch is described including digital control logic and a negative voltage generator integrated together with the RF switch elements. In one embodiment, the fully integrated RF switch includes a built-in oscillator, a charge pump circuit, CMOS logic circuitry, level-shifting and voltage divider circuits, and an RF buffer circuit. Several embodiments of the charge pump, level shifting, voltage divider, and RF buffer circuits are described. The inventive RF switch provides improvements in insertion loss, switch isolation, and switch compression.
Owner:PSEMI CORP
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