The present invention belongs to the field of electromagnetic functional devices, and specifically relates to a fin-line terahertz multi-phase shifter based on a
gallium arsenide diode, comprising: a rectangular
waveguide input port, a substrate, a rectangular
waveguide-fin-line transition structure, a fin-
line structure, a probe-type
microstructure phase shifter unit, its feeding opening portion, a fin-line-rectangular
waveguide transition structure, and a rectangular waveguide output port. The present invention addresses the problems of the existing terahertz wave phase modulator having few phase shifting technical solutions, large
insertion loss during phase shifting, a small phase shift range, a large device size, and low integrability. By controlling the on-off of the
diode on the probe-type
microstructure phase shifter unit by
voltage, the perturbation intensity of the probe on the fin line is changed, so that the equivalent
dielectric constant of the fin line changes, thereby achieving the phase shift of the terahertz wave; then, by superimposing the phase shifters in a centrally symmetrical and
parallel arrangement, a low-
insertion-loss multi-bit terahertz wave phase shift is finally achieved, ensuring a good working state and promoting the development of terahertz
phase control technology.