The application belongs to the technical field of
wireless communication and electronic
engineering, and particularly relates to a
wideband low-
noise amplifier with a
frequency domain selection function, which comprises an input direct-current isolation matching network, a first-stage amplification part, an inter-stage high-pass matching network, a second-stage amplification part and an output low-pass matching network which are sequentially connected in series. Through a multi-pole-zero
topology design, the
wideband rejection, high port isolation, high integration and
high selectivity are synergistically optimized. Within the target
passband of 8-12 GHz, three transmission poles in the
passband ensure excellent
gain flatness, and the
noise coefficient is stabilized at 0.994-1.101 dB; one transmission zero point is arranged in the lower
stopband (<8 GHz) and the upper
stopband (>12 GHz) respectively, the low-frequency suppression depth is greater than or equal to 50 dB, and the high-frequency suppression depth is greater than or equal to 30 dB; at the same time, the input
return loss is greater than or equal to 11 dB, the output
return loss is greater than or equal to 18 dB, and the port matching and isolation performance are excellent. The application is based on a GaAs 0.15 mu m MMIC planar integration process, and compared with a discrete
cascade scheme, the volume is reduced by 60%, which is suitable for the development trend of high integration and
miniaturization of a
radio frequency front end, and can be widely applied to 5G
millimeter wave communication,
satellite navigation,
radio frequency radar and other
radio frequency front end systems with extremely high requirements for receiving sensitivity and anti-interference ability.