This invention relates to a method and apparatus for measuring the
magnetostriction coefficient of
magnetic thin film materials based on Fabry-Perot optical
interferometry readout coupled with a nanomechanical
resonator. The apparatus includes a Si / SiO2 substrate, a
magnetic field source, a measurement cavity, an interferometric
microscopy system, and an analysis and control component. The Si / SiO2 substrate comprises a Si layer, a SiO2 layer, and a gate. A hole extending from the gate to the Si layer is provided on the Si / SiO2 substrate. The
magnetic thin film material to be measured is disposed at the opening of the hole, forming a suspended membrane, which, together with the Si / SiO2 substrate, constitutes a Fabry-Perot interferometer. The analysis and control component includes an AC
signal generator, a phase-locked loop (PLL), and a lock-in
amplifier. The AC
signal generator is electrically connected to the
magnetic field source to control the
magnetic field source to generate a frequency-adjustable alternating magnetic field. The PLL is used for frequency tracking. The lock-in
amplifier is used for
differential measurement. Compared with existing technologies, this invention is applicable to the characterization of the
magnetostriction coefficient of single-layer / few-layer van der Waals
magnet thin film materials and has the
advantage of high sensitivity.