1results about How to "Measure directly" patented technology

This application provides an ion implanter, including a vacuum chamber, a temperature probe, and a lead tube. The vacuum chamber contains a target disk for supporting a wafer. The temperature probe includes a temperature sensor, a metal shield, and a cable. The temperature sensor is a non-contact type, mounted on the inner wall of the vacuum chamber and aligned with the surface of the wafer supported on the target disk. The metal shield covers the outside of the temperature sensor to shield it from interference from the ion beam. The cable transmits power and signals to the temperature sensor. The lead tube, a tubular structure, extends through the vacuum chamber to lead the temperature probe cable to the outside of the vacuum chamber. This application's technical solution enables real-time, reliable, and accurate temperature monitoring of the wafer supported on the target disk, ensuring that operators can promptly obtain the wafer's true temperature status and take rapid action in case of abnormal temperature increases to prevent damage to the wafer.