16 results about "Mems capacitors" patented technology

The invention relates to the technical field of vacuum measurement, in particular to a multi-sealing-cavity MEMS capacitor thin film vacuum gauge, and is characterized in that a silicon substrate is arranged above substrate glass and is bonded with the substrate glass; a pressure sensing film is obtained in the middle of the silicon substrate in a photoetching and dry etching mode; a fixed metal electrode is obtained in the middle of the substrate glass in a photoetching and sputter coating mode; a capacitance gap is formed between the fixed metal electrode and the pressure sensing film; photoetching and corroding the silicon substrate, forming a working sealing cavity above the pressure sensing film, and respectively forming a first cavity and a second cavity above two sides of the pressure sensing film; getter blocks are arranged in the first chamber and the second chamber; and the sealing glass is arranged above the silicon substrate. On the premise that the size of the vacuum gauge is not obviously increased, the multiple chambers are arranged to form the sealing cavity, the air suction capacity is improved, high vacuum obtaining and long-term maintaining performance of the sealing cavity of the vacuum gauge are ensured, and the long-term stability of the vacuum gauge is greatly improved.

According to an example aspect of the present invention, there is provided an apparatus comprising a microelectromechanical, MEMS, capacitor comprising two plates and a gap between the plates, a gas conveyor configured to cause gas to flow through the gap, and readout circuitry configured to measure a capacitance of the MEMS capacitor.

The invention belongs to the field of semiconductor devices, and particularly discloses a photoelectric memcapacitor device based on a floating gate structure and a preparation method of the photoelectric memcapacitor device. Wherein the oxide tunneling dielectric layer is used for enabling carriers on the substrate to pass through and enter the floating gate layer under the action of an electric field or a light field; the oxide barrier dielectric layer is used for preventing tunneling carriers from flowing out of the transparent top electrode; the oxide tunneling dielectric layer and the oxide blocking dielectric layer are used for shielding carriers on the floating gate layer, so that the capacitance value is regulated and controlled, and memory regulation and control of optical signals and electric signals on the capacitance value are realized. According to the invention, memory regulation and control of the electric signal and the optical signal on the capacitance value of the device are realized, and the photoelectric hybrid memory capacitance behavior is realized on a single device.

The invention is suitable for the field of health detection and life prediction of the whole life cycle of an MEMS capacitor film, and provides an MEMS capacitor film vacuum gauge diaphragm life prediction system based on deep learning. The device comprises a molecular pump set, a first vacuum valve, a second vacuum valve, a first cold cathode ionization vacuum gauge, a second cold cathode ionization vacuum gauge, a first vacuum chamber, a second vacuum chamber, a third vacuum chamber, a first LCR digital bridge, a second LCR digital bridge, a first MEMS diaphragm chamber, a second MEMS diaphragm chamber, a temperature control box, an upper computer, a controller and an electromagnetic valve. According to the method, more reliable life prediction can be realized, and better robustness is achieved. According to the method, test equipment does not need to be developed, the method can be realized through conventional equipment and methods, the evaluation accuracy is high, the efficiency is high, and the operation is convenient and simple.

The invention relates to a switching arrangement for controlling an actuator for driving an oscillating movement of a mass element in an MEMS. The switching arrangement comprises: an electric oscillating circuit with an inductor, an MEMS capacitor and a charging connection; a controllable switching device for selectively interrupting or closing the oscillating circuit by controlling the switching device; and a resonance frequency based on a permanently closed state. The switching arrangement furthermore has a controller for controlling the switching device. The inductor is arranged in the oscillating circuit such that during charge transfer and during temporary recharging of the MEMS capacitor, the inductor is in a current path through which current flows and which extends through the MEMS capacitor. The controller is configured to set, by way of corresponding controlling, the switching device to a state in which it interrupts the oscillating circuit, and therefore the oscillation frequency is lower than the resonance frequency, this being done during an oscillation period of the oscillating circuit occurring in the closed state of the switching device temporarily at a time at which the voltage over the MEMS capacitor reaches a maximum amount.

Described are various circuits for controlling an actuator for driving an oscillating movement of at least one movable component of a microelectromechanical system (MEMS), as well as a MEMS equipped with such a circuit. The circuits have at least one MEMS capacitor which is designed as an actuator component in such a way that said MEMS capacitor forms a component of an electromechanical converter of the actuator, the converter being configured to convert electrical energy stored in the MEMS capacitor into at least one mechanical quantity for driving a movement of the actuator. The circuits contain a step-up converter circuit for generating a charging voltage for the direct, capacitor-unbuffered charging of the MEMS capacitor, and / or a pausable oscillation circuit with the MEMS capacitor as an oscillation circuit capacitor.

According to an exemplary aspect of the present invention, a device is provided, comprising: a micro-electromechanical (MEMS) capacitor, the MEMS capacitor comprising two plates and a gap between the two plates; a gas conveyor, the gas conveyor being configured to flow a gas through the gap; and a readout circuit, the readout circuit being configured to measure the capacitance of the MEMS capacitor.

A computational device includes a phase-change material (PCM) variable microelectromechanical systems (MEMS) capacitor and a power source. The PCM variable MEMS capacitor includes a substrate, a first electrode, a second electrode, a PCM, and a heater. The first electrode is spaced apart from the substrate to define a PCM cavity. The second electrode is spaced apart from the first electrode to define a capacitance gap. The PCM is disposed within the PCM cavity. The heater element is coupled to receive a voltage pulse, whereby a temperature of the PCM varies to thereby vary the capacitance gap. The power source is coupled to the PCM variable MEMS capacitor and is operable to (i) supply the voltage pulse to the heater and (ii) a time-dependent voltage between the first electrode and the second electrode, to thereby implement a single multiply operation.

The application provides a MEMS capacitor and a manufacturing method thereof, wherein a first isolation layer, a first electrode plate layer, a second isolation layer and a second electrode plate layer are sequentially formed on the upper surface of a substrate, the substrate has a first through hole, the first isolation layer has a second through hole above the first through hole and larger than the first through hole in radial dimension, the second through hole exposes a sharp corner formed by the side wall of the first through hole and the upper surface of the substrate, the first electrode plate layer is suspended on the second through hole, the second isolation layer exposes the middle area of the first electrode plate layer to form a cavity between the second electrode plate layer and the first electrode plate layer, at least one connecting column connecting the first electrode plate layer and the second electrode plate layer is arranged in the cavity, and the horizontal distance between the connecting column and the sharp corner is within a set range. In this way, when the first electrode plate layer vibrates downward, the connecting column provides an upward pulling force to the first electrode plate layer, and the probability of the first electrode plate layer touching the sharp corner can be reduced without affecting the performance of the MEMS capacitor.

The present invention discloses a far-field sound pickup optimization method based on a directional module, and specifically relates to the technical field of sound pickup optimization. By acquiring MEMS capacitance fluctuation information in a microphone array, electromagnetic interference information in an operating environment of the microphone array, and self-oscillation information in a feedback loop, a directional beam reconfiguration delay impact model is constructed according to the MEMS capacitance fluctuation coefficient, the electromagnetic interference coefficient, and the self-oscillation coefficient, and a directional beam reconfiguration delay impact index is generated. Potential operating risks of the microphone array are captured in a timely and effective manner, and the degree of delay impact of the MEMS capacitance fluctuation in the microphone array, the electromagnetic interference in the operating environment, and the self-oscillation of the feedback loop on the directional beam reconfiguration is quantified. A particle swarm algorithm is used to intelligently adjust the gain and phase of the microphone unit according to the degree of delay impact, so that the beamforming process is more accurate and the performance loss caused by delay is reduced.

The invention relates to the technical field of vacuum gauge test and calibration, in particular to a wide-range vacuum gauge composite gauge tube with a self-calibration function, which comprises a magnetic suspension rotor vacuum sensing assembly, a vacuum chamber, an ionization type vacuum sensing assembly and an MEMS (Micro Electro Mechanical System) capacitance film vacuum sensing assembly, wherein the magnetic suspension rotor vacuum sensing assembly is connected with the outer pipe wall of the vacuum chamber through a CF16 flange; the ionization type vacuum sensing assembly is fixedly welded on a CF35 flange electrode below the vacuum chamber; and the MEMS capacitance film vacuum sensing assembly is arranged below the ionization type vacuum sensing assembly and is isolated through the shielding plate. According to the invention, the embedding of the high-vacuum-range vacuum reference standard appliance is realized, the in-situ / online calibration of the MEMS capacitor film vacuum sensing assembly corresponding to the medium-low vacuum range and the high-vacuum / ultrahigh-vacuum-range ionization type vacuum sensing assembly is realized by utilizing the good linearity and long-term stability of the high-vacuum-range vacuum reference standard appliance, the disassembly in the cycle detection process is avoided, and the detection efficiency is improved. And a self-calibration function is realized.

A computing device includes a phase change material (PCM) variable micro-electro-mechanical system (MEMS) capacitor and a power source. A PCM variable MEMS capacitor includes a substrate, a first electrode, a second electrode, a PCM, and a heater. The first electrode is spaced apart from the substrate to define a PCM chamber. The second electrode is spaced apart from the first electrode to define a capacitive gap. The PCM is disposed within the PCM chamber. The heater element is coupled to receive the voltage pulse, whereby the temperature of the PCM varies, thereby changing the capacitance gap. A power supply is coupled to the PCM variable MEMS capacitor and is operable to (i) supply a voltage pulse to the heater and (ii) supply a time dependent voltage between the first electrode and the second electrode to achieve a single multiplication.

A computational device includes a phase-change material (PCM) variable microelectromechanical systems (MEMS) capacitor and a power source. The PCM variable MEMS capacitor includes a substrate, a first electrode, a second electrode, a PCM, and a heater. The first electrode is spaced apart from the substrate to define a PCM cavity. The second electrode is spaced apart from the first electrode to define a capacitance gap. The PCM is disposed within the PCM cavity. The heater element is coupled to receive a voltage pulse, whereby a temperature of the PCM varies to thereby vary the capacitance gap. The power source is coupled to the PCM variable MEMS capacitor and is operable to (i) supply the voltage pulse to the heater and (ii) a time-dependent voltage between the first electrode and the second electrode, to thereby implement a single multiply operation.

The present invention discloses an absolute pressure contact type MEMS capacitive thin film vacuum sensor, including a sensor chip, a housing for mounting the sensor chip, and an upper shell for encapsulating the sensor chip in the housing; the sensor chip includes a borosilicate pressure-sensitive film, a silicon substrate and a glass substrate, which are connected in sequence from top to bottom; a cavity is provided on one side of the silicon substrate, and the silicon substrate is directly bonded to the borosilicate pressure-sensitive film on the side provided with the cavity to form a vacuum reference cavity; an air extraction hole is provided in the vacuum reference cavity, and the air extraction hole is sealed by anodically bonding the other side of the silicon substrate to the glass substrate, so that the vacuum reference cavity forms a high vacuum. The present invention simplifies the process flow and reduces the lower limit of measurement of the vacuum sensor by providing an air extraction hole inside the vacuum reference cavity, converting the technology of forming the vacuum reference cavity into a combination of silicon-silicon direct bonding and silicon-glass anode bonding; a protective ring is provided on the borosilicate pressure-sensitive film to reduce the influence of the sensor sensitivity and improve the resolution of the vacuum sensor.

The invention discloses a dual-MEMS capacitance pendulum dual-parameter acceleration and speed output sensor, and relates to the technical field of MEMS vibration measurement devices. The MEMS capacitance pendulum I is used as an acceleration signal sensor and a feedback restoring force actuator; one end of the first MEMS capacitor pendulum is connected with a cantilever beam, the other end of the first MEMS capacitor pendulum is connected with the second MEMS capacitor pendulum through a rigid connecting rod, and the first MEMS capacitor pendulum and the second MEMS capacitor pendulum serve as sensitive structures to be packaged in a tube shell in a vacuum mode and are provided with a first movable mass block and a second movable mass block respectively to sense external vibration. An upper polar plate and a lower polar plate are respectively arranged corresponding to the movable polar plates; the vibration acceleration and the vibration speed can be measured at the same time, the effect can be achieved by directly using the MEMS capacitor pendulum as an actuator and utilizing electrostatic restoring force, the structure is more compact, and integration and industrialization are easier to achieve.

The invention relates to the technical field of vacuum measurement, in particular to a double-layer absolute pressure type MEMS capacitor film vacuum gauge, which comprises a silicon substrate, a glass substrate and a PCB, and is characterized in that the silicon substrate comprises a thick silicon layer, a silicon oxide layer and a thin silicon layer from bottom to top; obtaining a reference cavity and a film extraction electrode window on the thick silicon layer, and obtaining a pressure sensing film and a film extraction electrode on the thin silicon layer; the glass substrate comprises a silicon electrode and glass; a silicon electrode lead-out hole is formed in the center of the glass; the lower surface of the silicon electrode is bonded with the upper surface of the glass through anodic bonding; an insulating layer is arranged on the upper surface of the silicon electrode; performing secondary anodic bonding on the upper surface of the glass and the lower surface of the thick silicon layer; and the combination body of the silicon substrate and the glass substrate is welded with the PCB through a bonding pad and soldering tin. The double-layer structure of the silicon substrate and the glass substrate is adopted, the preparation process flow is simplified, the sensitivity is high, the stability is good, and the absolute vacuum degree in the range of 1 * 10 <-2 > Pa to 1 * 10 < 5 > Pa can be measured.