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2362 results about "Pressure increase" patented technology

There are three ways to increase the pressure: Add more gas. Decrease the volume. Increase the temperature.

Micro beam plasma 3D (three dimensional) printing device and method

The invention discloses a micro beam plasma 3D (three dimensional) printing device and a micro beam plasma 3D printing method. The micro beam plasma 3D printing device comprises a plasma processing device, a central control system, a shaping chamber, a work platform, a numerical control main shaft, a drive device and a powder feeding device. The plasma processing device comprises a plasma power source, a plasma generator, a plasma arc pressure increasing device, a plasma gun, a work gas circuit and a cooling water circuit. The plasma generator, the plasma arc pressure increasing device, the plasma gun, the work gas circuit and the cooling water circuit form a plasma processing integration unit. When the micro beam plasma 3D printing device is used in processing, the numerical control main shaft clamps the plasma processing integration unit, and is driven by the drive device to move in the XYZ direction, and the work platform moves up and down, and achieves feeding in the X direction. According to the micro beam plasma 3D printing device and the micro beam plasma 3D printing method, micro beam plasma is used as a hot source of melting metal material in metal 3D printing, and the industrial grade metal part 3D printing device high in efficiency and low in cost can be obtained on the premise that shaping accuracy similar to that in a laser 3D printing technology is guaranteed.
Owner:SOUTH CHINA UNIV OF TECH

Clamp for holding and efficiently removing heat from workpieces

The invention described in this disclosure is an apparatus and method for clamping semiconductor wafers or other substrates or workpieces during etching, CVD, or surface modification processes. The purpose of the invention is to achieve improved heat transfer during processing between the wafer/substrate and a temperature controlled pedestal used for supporting it in the process chamber. The typical level of process heat put into the wafer during plasma-based etching or deposition processes will be up to about 10 Watts per centimeter squared while the maximum acceptable temperature differential between wafer/substrate and pedestal is less than about 100 Celsius. In such low gas pressure environments typical for plasma-based processes, the heat removal from the wafer/substrate by gaseous conduction may be inadequate to meet requirements. This invention achieves excellent heat transfer to the pedestal from the wafer/substrate when there is a thin, resilient, electrically insulating layer (tape) bonded to the wafer/substrate or the pedestal. Wafer/substrate clamping for improved process heat removal is achieved by a combination of vacuum clamping of the wafer/substrate beginning prior to evacuation of the processing chamber, along with or followed by electrostatic clamping of the wafer/substrate which continues during processing. The invention also permits the wafer/substrate to be rapidly and safely released from the electrostatic clamping when the chamber is returned to atmospheric pressure by a providing a slight pressure increase, above atmospheric pressure, between wafer and pedestal. The pedestal may have some roughening or narrow grooves on the wafer clamping surface, and some small holes from its surface leading to an evacuated plenum or channel within the pedestal. Alternatively, the pedestal may have a layer of a porous metal extending from its surface down to the evacuated channel or plenum which permits gas to be evacuated. These structures allow vacuum pumping of gas that might otherwise be trapped between the insulating layer and the pedestal. When a wafer/substrate is placed on the pedestal by loading at atmospheric pressure, vacuum pumping through the pedestal is commenced. This causes the workpiece to be pressed to the pedestal clamping surface with approximately atmospheric pressure compressing the soft layer against its clamping surface. This provides sufficient contact of the soft layer with the pedestal to greatly improve heat transfer from the wafer/substrate to the pedestal. A voltage is applied to the pedestal, beginning any time after the wafer is on the pedestal, to further clamp the wafer electrostatically. As the processing chamber is then pumped down to operating pressure for processing the electrostatic clamping voltage maintains sufficient pressure of the wafer/substrate against the pedestal to maintain the heat conductive contact between the soft layer and the pedestal. This permits good heat conduction to be maintained during the low pressure plasma-based etching or CVD processing. Following processing when the wafer/substrate is to be removed it may be rapidly de-clamped from the electrostatic clamping by application of a slight over-atmospheric pressure in the reservoir or pumping channels within the pedestal.
Owner:SAVAS STEPHEN EDWARD +1

Arrangement and method for metering target material for the generation of short-wavelength electromagnetic radiation

The invention is directed to an arrangement for metering target material for the generation of short-wavelength electromagnetic radiation from an energy beam induced plasma, in particular X radiation and EUV radiation. The object of the invention is to find a novel possibility for metering target material for the generation of short-wavelength electromagnetic radiation from an energy beam induced plasma which makes it possible to provide reproducibly supplied mass-limited targets in such a way that only the amount of target material for plasma generation that can be effectively converted to radiating plasma in the desired wavelength region arrives in the interaction chamber and, therefore, debris generation and the gas burden in the interaction chamber are minimized. This object is met, according to the invention, in that an injection device is provided for target generation, wherein means are arranged upstream of the nozzle in a nozzle chamber for a defined, temporary pressure increase in order to introduce an individual target into the interaction chamber exclusively when required, and an antechamber is arranged around the nozzle for generating a quasistatic pressure upstream of the interaction chamber, wherein an equilibrium pressure in the antechamber prevents the escape of target material as long as there is no pressure increase in the nozzle chamber.
Owner:XTREME TECH

System and method for testing rock damage and permeability under coupling effect of temperature stress and circumferential seepage

The invention discloses a system for testing rock damage and permeability under the coupling effect of temperature stress and circumferential seepage. The system comprises a frozen-heave force test device and a permeation test device, wherein the permeation test device comprises a pressure chamber for loading a rock test piece to be tested, a pressure loading device, a permeation pressure increasing and measuring device, a water bath heating device, an ultrasonic damage test device and a data acquisition device. The invention further discloses a method for testing rock damage and permeability under the coupling effect of temperature stress and circumferential seepage. The method comprises the following steps: carrying out repeated freezing-thawing tests on a rock by the frozen-heave force test device, measuring the frozen-heave force change of the rock test piece, putting the rock into the pressure chamber, applying a pressure to the rock test piece by the pressure loading device, and testing a rock permeation coefficient k and ultrasonic wave speed transmission time t under the action of flowing liquid with different temperatures and pressures so as to make a research on rock damage and permeability.
Owner:DALIAN MARITIME UNIVERSITY
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