24 results about "Low pressure plasma" patented technology

The invention discloses a manufacturing process and equipment of a high-performance long-service-life cold working die. The process comprises the following steps: quenching and tempering a cold-work die steel blank to obtain a tempered martensite structure; plasma nitrocarburizing is carried out to form a reinforced diffusion layer; the micro-pit array is machined through pulse laser, and an annular heat-affected softening zone is formed around the opening of the pit; depositing a hard coating, and forming a cantilever structure on the edge of the micro pit; wherein plasma nitrocarburizing is carried out in a low-pressure plasma atmosphere, laser processing and coating deposition are carried out in a vacuum or protective atmosphere, and transfer among the steps is not exposed to the atmosphere. The invention further provides corresponding manufacturing equipment which comprises a heat treatment cavity, a plasma nitrocarburizing cavity, a surface micro-texture machining cavity, a coating deposition cavity and a vacuum transfer cavity. According to the invention, the hardness mutation between the coating and the matrix is relieved, a hardness gradient transition structure is constructed, the fatigue stripping resistance of the coating is obviously improved, and the service life of a mold is prolonged.

The invention relates to a method for producing a fabric having hydrophobic and oleophobic properties, said fabric having a halogen-free plasma coating, whereby the method comprises: a step DHF of depositing a plasma coating on the fabric by plasma-enhanced chemical vapor deposition (PECVD) by means of plasma polymerization of halogen-free precursor monomers, wherein the halogen-free precursor monomer is an organosilane, siloxane and / or hydrocarbon precursor wherein the plasma enhanced chemical vapor deposition is carried out under a protective atmosphere as a low pressure plasma process wherein the fabric comprises a woven monofilament fabric of polymeric material having a filament diameter of 10 [mu] m to 150 [mu] m and meshes of between 5 [mu] m and 200 [mu] m.

The invention relates to a method of producing a fabric having a halogen free plasma coating, having a hydro- and oleophobic characteristics, wherein the method comprises: step DHF of depositing a plasma coating on the fabric by means of plasma polymerization of a halogen free precursor monomer by plasma-enhanced chemical vapor deposition method (PECVD), wherein the halogen free precursor monomer are organosilane, siloxane and / or hydrocarbon precursors, wherein the plasma-enhanced chemical vapor deposition is carried out as a low-pressure plasma processes under protective atmosphere, wherein the fabric comprises of a woven monofilament fabric of polymeric material having a filament diameter between 10 μm to 150 μm and a mesh opening between 5 μm and 200 μm.

A plasma applicator comprising an electrotechnical core for generating a cold atmospheric pressure or low-pressure plasma for the treatment of human and / or animal and / or technical surfaces, wherein the electrotechnical core has a side facing the surface to be treated and a side facing away from the surface to be treated and comprises the following layers, arranged above one another, starting from the side facing the surface to be treated, a first insulation layer, a first electrode structure which is provided with a first contact for establishing electrical contact between the first electrode structure and a power supply unit and which is grounded during operation, a second insulation layer, which is embodied to galvanically isolate the first electrode structure and a second electrode structure from one another, a second electrode structure which is provided with a second contact for establishing electrical contact between the second electrode structure and a power supply unit and which is driven during operation by a voltage signal that is supplied by a power supply unit and that is sufficient to ignite a plasma, a third insulation layer, which is embodied to galvanically isolate the second electrode structure and a third electrode structure from one another, and a third electrode structure which is provided with a third contact in order to ground the third electrode structure during operation, the plasma applicator further comprising an enclosure, wherein the plasma applicator is affixed to a bag, said bag being configured to enclose a body or body segment and to thus form a sealed gas space around the body or body segment.

To provide a method of producing a fabric having a plasma coating which has a hydro- and oleophobic characteristics and is free from halogen, particularly free from perfluoroalkyl substances and polyfluoroalkyl substances (PFAS).SOLUTION: The invention relates to a method of producing a fabric having a halogen-free plasma coating having a hydro- and oleophobic characteristics, where the method comprises: a step DHF of depositing a plasma coating on the fabric by means of plasma polymerization of a halogen-free precursor monomer by plasma-enhanced chemical vapor deposition method (PECVD), where the halogen-free precursor monomer are organosilane, siloxane and / or hydrocarbon precursors, where the plasma-enhanced vapor deposition is carried out as a low-pressure plasma processes under protective atmosphere, where the fabric comprises a woven monofilament fabric of polymeric material having a filament diameter of 10 μm to 150 μm and a mesh opening of 5 μm to 200 μm.SELECTED DRAWING: Figure 1

A sputtering gas containing a rare gas is introduced into a vacuum chamber 1 of a vacuum atmosphere, an electric power with a negative potential is supplied to a target 2, a positive potential is applied to the reflector plate 4, a plasma is generated, and subsequently the supply of the sputtering gas is stopped, then the target is sputtered while a self-holding discharge under low pressure of plasma is generated. A high-frequency bias power is supplied from a high-frequency power source 61 through an impedance matching device 62 to a stage 5 on which an object to be deposited is mounted. An electron matcher having at least one variable reactor to be electronically controlled is used as an impedance matching device, and a high-frequency bias power is intermittently supplied to the stage at a predetermined frequency.

The invention relates to a vortex spinning lyocell coarse yarn and a preparation process thereof, and belongs to the technical field of vortex spinning, the vortex spinning lyocell coarse yarn is prepared by the following steps: pretreating lyocell fibers by using deionized water and a nonionic surfactant to remove impurities such as surface spinning oil and dust, and then treating the pretreated lyocell fibers in a low-temperature and low-pressure plasma environment to obtain the vortex spinning lyocell coarse yarn. The gas in the plasma reaction chamber is oxygen, active groups such as carboxyl and hydroxyl are introduced to the surfaces of the pretreated lyocell fibers, the surface roughness is increased while the mechanical property of the pretreated lyocell fibers is guaranteed, and the mechanical friction force between the fibers is enhanced; the modified lyocell fibers and the polyester staple fibers form hydrogen bonds and covalent bonds with amino groups in dopamine hydrochloride molecules in the forming process of the polydopamine coating, the stability of the coating is improved, in addition, the cohesive force between the modified lyocell fibers and the polyester staple fibers is further increased due to the viscosity of the polydopamine coating, and the tensile strength of the polyester staple fibers is improved. The mechanical strength and durability of the vortex spinning lyocell coarse yarn are synergistically improved.

The application discloses a method for cleaning a large-diameter optical element in situ by using a CO2 laser and low-pressure plasma, and comprises the following steps: cleaning a contaminated optical element by using a CO2 laser and low-pressure plasma combined cleaning system; designing a CO2 laser cleaning route, setting laser cleaning parameters, and cleaning the optical element by using the CO2 laser; setting low-pressure plasma cleaning parameters, and cleaning the optical element by using the low-pressure plasma; comparing performance parameters of the optical element before contamination, after contamination, after CO2 laser cleaning, and after low-pressure plasma cleaning; and optimizing the cleaning parameters to obtain optimal cleaning parameters for cleaning the large-diameter optical element in situ by using the CO2 laser and the low-pressure plasma. The application can realize high-efficiency and non-damage cleaning of the large-diameter optical element in situ, and effectively solves the problems of surface damage during laser cleaning of the precision optical element and low cleaning efficiency of the low-pressure plasma.

The invention provides a semiconductor device and a manufacturing method thereof, and the method comprises the steps: providing a substrate, and forming a metal layer on the substrate; forming a patterned hard mask layer on the metal layer; etching the metal layer by taking the patterned hard mask layer as a mask so as to form a groove penetrating through the metal layer; performing multiple oxidation treatment on the metal layer on the side wall of the groove to form an oxidation layer on the surface of the metal layer on the side wall of the groove; wherein the oxidation treatment comprises high-pressure plasma oxidation and low-pressure plasma oxidation which are sequentially carried out. According to the technical scheme, the point effect at the side digging position of the metal layer can be weakened, and then the reliability of the device is improved.

The invention belongs to the technical field of high-end manufacturing, and particularly relates to a short-process low-pressure plasma spraying device and method. According to the method, a high-energy laser beam is located at the front end of plasma flame flow on the surface of a workpiece and moves synchronously with a spray gun, texturing treatment and surface cleaning are achieved, and synchronous preheating of a base material spraying area is achieved through induction coils coaxially distributed at the tail end of the plasma flame flow. According to the method, the problems of pollution, oxidation, deformation, stress concentration, even coating cracking and the like caused by the pretreatment process and multiple times of heating of the base material can be reduced to the maximum extent, and the coating processing and preparing efficiency and the coating quality are remarkably improved.

A method for synthesizing at least one crystalline layer of manganese oxides that can contain zinc, of formula ZnxMnyOz, where x is greater than or equal to 0, y is greater than 0, and z is greater than 0, the method being implemented in a chamber of a low-pressure plasma reactor, kept between 10 Pa and 105 Pa, the method comprising forming a plasma discharge from a plasma-generating gas; adding, in the form of a nebulizate, a predetermined amount of a manganese precursor; adding a reactive gas so as to create oxygen vacancy defects in the layer of manganese oxides, and / or so as to maintain a controlled redox environment; synthesizing and depositing, on a substrate, the at least one crystalline layer of manganese oxides that can contain zinc, these operations being carried out at a substrate temperature of 400° C. or less, advantageously 200° C. or less.

The invention relates to a device for generating low-pressure plasma, comprising a glass-comprising, preferably disk-shaped, dielectric having a low thickness, a low warpage, a low roughness and low total thickness variation.

The invention discloses a regeneration method of a carbon deposition molecular sieve catalyst, and belongs to the field of catalyst regeneration. The low-pressure plasma is used for low-temperature ashing of the carbon deposition molecular sieve catalyst, so that carbon deposition on the molecular sieve is oxidized and decomposed at the temperature of 200 DEG C or below. The low-pressure plasma ashing regeneration process is carried out at low temperature, which is far lower than that of a traditional calcination (usually 600 DEG C) regeneration method. The method effectively prevents the problem of local high temperature of the surface of the molecular sieve caused by combustion heat release of deposited carbon in the traditional high-temperature calcination process, and further inhibits the problems of collapse and structural change of a molecular sieve framework. And meanwhile, the interaction between the low-pressure plasma and the surface of the molecular sieve is beneficial to inhibiting the generation of carbon deposition. According to the method, aromatic hydrocarbon prepared through lignite pyrolysis is taken as a probe reaction, performance evaluation of catalysts obtained through traditional calcination regeneration and low-pressure plasma ashing regeneration is compared, and results prove that the performance of the low-pressure plasma ashing regeneration catalyst is higher than that of a traditional calcination regeneration catalyst.

The invention relates to a device for generating low-pressure plasma comprising a glass-encompassing, preferably disk-shaped, dielectric with a small thickness, a small warp, a small roughness and a small thickness variation.

Porous polymer films and fibers are disclosed that are subjected to an oxygen plasma treatment without causing a deterioration of mechanical properties. In one aspect, the plasma process can be a low pressure plasma process with microwave discharge. Exposure times can be minimized for preserving physical properties. Porous polymer films made according to the present disclosure can show dramatically improved wicking properties when tested against electrolyte solutions, indicating a significant increase in ion conductivity.

Provided herein are methods and related apparatus for depositing an ashable hard mask (AHM) on a substrate in a low pressure chamber using a dual frequency radio frequency component. Low pressure plasma enhanced chemical vapor deposition may be used to increase the etch selectivity of the AHM, permitting the use of a thinner AHM for semiconductor processing operations.

A blood collection device including a plastic hematocrit tube having a first open end, a second open end opposite the first open end, and a sidewall which together define an elongated collection body, wherein an interior wall surface area of the elongated collection body is treated with a plasma generated from a gas containing oxygen, whereby the plasma-treated interior wall surface area is modified such that a capillary action for drawing blood is achieved by inducing a low-pressure environment to allow plasma ions to travel a length of the elongated collection body.

The invention provides a preparation method of an ion solvation membrane supported by a porous substrate and the ion solvation membrane, and belongs to the technical field of hydrogen production through alkaline water electrolysis. The preparation method of the ion solvation membrane supported by the porous substrate comprises the following steps: S1, performing low-pressure plasma surface treatment; step S2, grafting modification treatment; and S3, performing interfacial polymerization treatment. According to the invention, common polytetrafluoroethylene, polypropylene, polyether-ether-ketone, polyethylene or polyvinylidene fluoride and the like are used as a porous polymer substrate, low-pressure plasma surface treatment, grafting modification treatment and interfacial polymerization treatment are carried out in sequence, and the prepared ion solvated membrane has good gas barrier property, relatively low surface resistance and good gas barrier property. Meanwhile, the raw material cost is relatively low, and remarkable industrial application advantages are achieved.

The invention relates to a method of producing a fabric having a halogen free plasma coating, having a hydro- and oleophobic characteristics, wherein the method comprises: step DHF of depositing a plasma coating on the fabric by means of plasma polymerization of a halogen free precursor monomer by plasma-enhanced chemical vapor deposition method (PECVD), wherein the halogen free precursor monomer are organosilane, siloxane and / or hydrocarbon precursors, wherein the plasma-enhanced chemical vapor deposition is carried out as a low-pressure plasma processes under protective atmosphere, wherein the fabric comprises of a woven monofilament fabric of polymeric material having a filament diameter between 10 µm to 150 µm and a mesh opening between 5 µm and 200 µm.

A semiconductor structure may be provided by: forming semiconductor fins over a semiconductor substrate; forming a gate dielectric layer and gate electrodes; forming a silicon layer over the gate electrodes; forming a dielectric mask layer including openings over the silicon layer; etching portions of the silicon layer that underlie the openings by performing a first anisotropic etch process; etching portions of the gate electrodes that underlie the openings by performing a second anisotropic etch process; and removing portions of the semiconductor fins and portions of the semiconductor substrate that underlie the openings by performing a third anisotropic etch process. At least one anisotropic etch step within the third anisotropic etch process comprises at least one low pressure etch step that is performed at a total pressure in a range from 5 mTorr to 50 mTorr.

A plasma applicator comprising an electrotechnical core for generating a cold atmospheric pressure or low-pressure plasma for the treatment of human and / or animal and / or technical surfaces, wherein the electrotechnical core has a side facing the surface to be treated and a side facing away from the surface to be treated and comprises the following layers, arranged above one another, starting from the side facing the surface to be treated, a first insulation layer, a first electrode structure which is provided with a first contact for establishing electrical contact between the first electrode structure and a power supply unit and which is grounded during operation, a second insulation layer, which is embodied to galvanically isolate the first electrode structure and a second electrode structure from one another, a second electrode structure which is provided with a second contact for establishing electrical contact between the second electrode structure and a power supply unit and which is driven during operation by a voltage signal that is supplied by a power supply unit and that is sufficient to ignite a plasma, a third insulation layer, which is embodied to galvanically isolate the second electrode structure and a third electrode structure from one another, and a third electrode structure which is provided with a third contact in order to ground the third electrode structure during operation, the plasma applicator further comprising an enclosure, wherein the plasma applicator is affixed to a bag, said bag being configured to enclose a body or body segment and to thus form a sealed gas space around the body or body segment.

The invention discloses a plasma superconducting heat exchanger for distributed heat supply, and relates to the technical field of heat exchangers, the plasma superconducting heat exchanger comprises a base, a pulse capacitor bank is erected in the base, a partition plate is mounted at the upper end of the base, and a Tesla coil assembly is mounted in the center of the upper end of the partition plate; the Tesla coil assembly is connected with the pulse capacitor set through a wire, a protective cover is installed outside the Tesla coil assembly, the left side edge and the right side edge of the upper end of the partition plate are each provided with a plasma emission bin, and the two plasma emission bins are connected with the Tesla coil assembly through cables; connecting plates are jointly installed at the front ends and the rear ends of the two plasma emission bins, and first heat exchange pipes are installed on the outer sides of the connecting plates. A series of structures are arranged, clean energy heat supply is carried out through low-pressure plasma, heat instantly generated by high voltage is used for heating the heat supply system, the heat exchange efficiency is higher, and the heat supply system is more environmentally friendly.

Provided are a method for manufacturing a coated member having a treated film, and a film treatment device.　The method for manufacturing a coated member includes a step for preparing a base material, a step for forming a thermal-sprayed film on at least a portion of the surface of the base material, and a step for forming a modified film on the thermal-sprayed film by exposing the surface of the thermal-sprayed film to a reduced-pressure plasma generated from a modifying gas.

The application discloses a low-pressure plasma spraying device and a spraying method thereof, which comprises a base plate and a processing chamber, the base plate is provided with the processing chamber, the processing chamber is divided into a pretreatment chamber and a low-pressure spraying chamber by a partition plate, the low-pressure spraying chamber is provided with a plasma spraying device through a mechanical arm, the pretreatment chamber and the low-pressure spraying chamber are provided with a clamping rotating mechanism through a moving assembly, which is used for moving the workpiece along the pretreatment chamber to the low-pressure spraying chamber, the base plate is symmetrically provided with a guide assembly, the low-pressure spraying chamber is provided with a collecting assembly below the plasma spraying device, and the collecting assembly is provided with a spraying mechanism at the bottom end. The spraying mechanism is matched with the collecting assembly, so that the particles in the spraying process can be conveniently collected, the large particles can be separately collected for subsequent reuse, the particles with appropriate diameters are matched with the spraying mechanism to be sprayed out, the workpiece surface can be decontaminated, the cleanliness of the surface is ensured, the subsequent spraying processing is not affected, and the spraying quality is ensured.