676 results about "Magnetic thin film" patented technology

The present invention relates to a magnetic thin film memory having a hybrid element including a field effect transistor and a magnetoresistive thin film connected to the field effect transistor in parallel. In the magnetic thin film memory, the hybrid element is preferably arranged in plurality in a matrix state. The present invention also relates to a method of writing information in this magnetic thin film memory, and a method of reading the information written in this magnetic thin film memory.

A magnetic thin film element is provided with a magnetoresistive film including a first magnetic layer composed of a perpendicular magnetization film, a second magnetic layer composed of a perpendicular magnetization film having a higher coercive force than that of the first magnetic layer, and a nonmagnetic layer interposed between the first magnetic layer and the second magnetic layer. The resistance of the magnetoresistive film varies depending on whether or not the magnetic spins of the first magnetic layer and the second magnetic layer are in the same direction.

A spin injection device capable of spin injection magnetization reversal at low current density, a magnetic apparatus using the same, and magnetic thin film using the same, whereby the spin injection device (14) including a spin injection part (1) comprising a spin polarization part (9) including a ferromagnetic fixed layer (26) and an injection junction part (7) of nonmagnetic layer, and a ferromagnetic free layer (27) provided in contact with the spin injection part (1) is such that in which the nonmagnetic layer (7) is made of either an insulator (12) or a conductor (25), a nonmagnetic layer (28) is provided on the surface of the ferromagnetic free layer (27), electric current is flown in the direction perpendicular to the film surface of the spin injection device (14), and the magnetization of the ferromagnetic free layer (27) is reversed. This is applicable to such various magnetic apparatuses and magnetic memory devices as super gigabit large capacity, high speed, non-volatile MRAM and the like.

A structure for magnetically shielded transmission lines for use with high speed integrated circuits having an improved signal to noise ratio, and a method for forming the same are disclosed. At least one magnetic shield structure contains electrically induced magnetic fields generated around a number of transmission lines. The shield material is made of alternating layers of magnetic material and insulating material.

Provided are an inspection device and an inspection method capable of achieving improved magnetic field sensitivity by using a magnetic thin film of a small film thickness. A light-emitting unit 1 emits light of a first wavelength for acquiring magnetic field inspection information and a second wavelength for acquiring inspection object surface information. A selection unit 6 selects information from an inspection object 4 and information from a magnetophotonic crystal film 3 acquired by light irradiation performed by an irradiation unit 2. An image generation unit 9 generates image data based on the magnetic field inspection information acquired with the first wavelength and the inspection object surface information acquired with the second wavelength selected by the selection unit. Each of the generated image data is displayed on a display unit 10.

A method for depositing uniform and smooth ferromagnetic thin films with high deposition-induced microstructural anisotropy includes a magnetic material deposited in two or more static oblique deposition steps from opposed directions to form a free layer having a high kink Hk, a high energy barrier to thermal reversal, a low critical current in spin-torque switching embodiments, and improved resistance to diffusion of material from adjacent layers in the device. Nonmagnetic layers deposited by the static oblique deposition technique may be used as seed layers for a ferromagnetic free layer or to generate other types of anisotropy determined by the deposition-induced microstructural anisotropy. Additional magnetic or non-magnetic layers may be deposited by conventional methods adjacent to oblique layer to provide magnetic coupling control, reduction of surface roughness, and barriers to diffusion from additional adjacent layers in the device.

A thin film magnetic read/write head for use in magnetic data storage systems to enable writing of data to a magnetic data storage medium with the assistance of laser heating. The read/write head allows magnetic reading of data from the storage medium, and thermally assisted magnetic writing of data on the storage medium. A waveguide is provided in a write gap in the form of an optical circuit having a plurality of inputs and a single output at the air bearing surface (ABS) for concentrating laser light used for heating the storage medium during the write operation. The thermally assisted magnetic writing improves the thermal stability of the recorded data and usefulness thereof throughout a wide temperature range.

Portions excluding magnetic elements of a laminate film of magnetic films or the like constituting magnetic elements (1) are oxidized/nitrided or oxynitrided to be insulated by a plasma processing using a conductive mask (17), whereby a plurality of magnetic elements are separated. This laminate film comprises a magnetic element region (18) formed with magnetic elements (1) and an insulated region (19) consisting of oxides/nitrides or oxynitrides. Upper wiring such as a bit line (3) is formed later. Since the conductive mask used in forming the insulated region is made part of the upper wiring, the magnetic elements and the upper wiring can be disposed in contact with each other.

A spin MOSFET includes: a semiconductor substrate; a first magnetic film formed on the semiconductor substrate and including a first ferromagnetic layer, a magnetization direction of the first ferromagnetic layer being pinned; a second magnetic film formed on the semiconductor substrate to separate from the first magnetic film and including a magnetization free layer, a first nonmagnetic layer being a tunnel insulator and provided on the magnetization free layer, and a magnetization pinned layer provided on the first nonmagnetic layer, a magnetization direction of the magnetization free layer being changeable and a magnetization direction of the magnetization pinned layer being fixed; a gate insulating film provided at least on the semiconductor substrate between the first magnetic film and the second magnetic film; and a gate electrode formed on the gate insulating film.

A perpendicular write head includes a main pole comprising high moment magnetic layers laminated with both soft magnetic layers and non-magnetic layers for antiferromagnetic coupling (AFC) between the high moment material layers.

The present invention relates to using spin transfer torque underneath a nanocontact on a magnetic thin film with perpendicular magnetic anisotropy (PMA), provides generation of dissipative magnetic droplet solitons and magnetic droplet-skyrmions and report on their rich dynamical properties. Micromagnetic simulations identify the conditions necessary to nucleate and drive droplet-skyrmions over a wide range of currents and fields. Micromagnetic simulations also demonstrate how droplets and droplet-skyrmions can be used as skyrmion injectors and detectors in skyrmion-based magnetic memories. The droplet-skyrmion can be controlled using both current and magnetic fields, and is expected to have applications in spintronics, magnonics, skyrmionics, and PMA-based domain-wall devices.

A method for preventing electrical short circuits in a multi-layer magnetic film stack comprises providing a film stack that includes a layer of magnetic material having an exposed surface. A protective layer is deposited on the exposed surface of the magnetic layer. The protective layer may comprise, for example, a fluorocarbon or a hydrofluorocarbon. The film stack is etched and the protective layer protects the exposed surface from a conductive residue produced while etching the film stack. The method may be used in film stacks to form a magneto-resistive random access memory (MRAM) device.

The invention discloses a single-chip magnetic sensor, and a laser heating-assisted annealing apparatus thereof and a laser heating-assisted annealing method thereof. The laser heating-assisted annealing method comprises the following steps: (a), annealing is carried out on a magnetic thin film in a strong magnetic field, so that magnetic moments on a pinning layer of the magnetic thin film are towards a same direction; (b), the magnetic thin film is fixedly disposed on a clamp of a movable platform; (c), a laser source is opened to emit a laser beam, which is attenuated through an optical attenuator; the direction of the attenuated laser beam is changed through a reflective mirror; and the laser beam with the changed direction is focused into a light spot by a focusing objective lens; (d), the movable platform is moved, in order that the focused light spot of the laser beam is aimed at the magnetic thin film so as to enable the magnetic thin film to be heated by the laser beam; (e), a magnetic field intensity of an electromagnet arranged on the movable platform is adjusted, so that a magnetic domain of the heating area of the magnetic thin film can be overturned; and (f), the magnetic thin film is cut into slices, and the slices of the cut magnetic thin film are bound into one.

The invention provides a single-chip three-shaft magnetic field sensor and a production method. The single-chip three-shaft magnetic field sensor at least comprises a first substrate, at least two first electrodes, at least four second electrodes, a second substrate, a single-shaft rotation structure, a double-shaft rotation structure, a first magnetic film structure and a second magnetic film structure, wherein the first electrodes and the second electrodes are formed on the surface of the first substrate, the second substrate and the first substrate bond together through keys, the second substrate is provided with the single-shaft rotation structure and the double-shaft rotation structure, the single-shaft rotation structure and each of the two first electrodes form a capacitor structure, and the double-shaft rotation structure and each of the four second electrodes form a capacitor structure. The first magnetic film structure is formed on the surface of the single-shaft rotation structure and can generate corresponding torque under the action of a magnetic field in a first direction, and the second magnetic film structure is formed on the surface of the double-shaft rotation structure and can generate corresponding torque under the action of a magnetic field in a second direction and a magnetic field in a third direction. The single-chip three-shaft magnetic field sensor has the advantages of being high in sensitivity, small in size, low in power consumption and cost, easy to package and the like.

A method (and resulting structure) of patterning a magnetic thin film, includes using a chemical transformation of a portion of the magnetic thin film to transform the portion to be non-magnetic and electrically insulating.

A magnetic recording medium includes a substrate, an underlayer provided on the substrate, a Co alloy magnetic film formed through the underlayer, and a protective film for protecting the magnetic film, wherein the underlayer has a two-layer structure of an lower underlayer contacted with the substrate and an upper underlayer contacted with the Co alloy magnetic film, the upper underlayer is a Co-Crx-My alloy film having a hexagonal close-packed structure, where 25 atomic %<=x+y<=50 atomic %, 0.5 atomic %<=y, nonmagnetic element M is one selected from the group of elements B, Si, Ge, C, Al, P, Ti, V, Nb, Zr, Hf, Mn, Rh, Os, Ir, Re, Pd, Pt, Mo, Ta, W, Ag and Au. Thereby the medium can be increased in its coercive force and can be improved in its thermal stability characteristics.

A layered microstrip device is described, in which at least two layers of different high internal field/high resonance frequency materials serve as the active elements of the device. The device is designed to filter ranges of high frequency electromagnetic waves, and is on a small scale to enable integration with high frequency electronics. The ranges of frequencies to be filtered depend on the active elements and device geometry selected for the device. The tradeoffs regarding active material and device geometry choices are explored in detail. The ranges of frequencies to be filtered can be modified in real time with the application of an external magnetic field. A variety of the devices were fabricated, and a number of experimental and theoretical studies were carried out.

On top of a silicon substrate, a polyimide film with a thickness of 10 μm is formed. On top of this, a magnetic thin film that is a polyimide film containing Fe fine particles and that has a thickness of 20 μm is formed. On top of this magnetic thin film, a patterned Ti/Au film and a Ti/Au connection conductor are formed. On top of this, a polyimide film with a thickness of 10 μm, and a Cu coil with a height 35 μm, width 90 μm, space 25 μm, and a polyimide layer that fills the spaces in the Cu coil are formed. On top of this, via a polyimide film with a thickness of 10 μm, a magnetic thin film that is a polyimide film containing Fe particles and that has a thickness of 20 μm is formed. This thin film inductor has a small alternating current resistance. The present invention provides a magnetic thin film that is well suited for mass production, can be manufactured easily, can be made into a thick film, has soft magnetic qualities, and is inexpensive. The present invention also provides a magnetic component that uses this magnetic thin film, manufacturing methods for these, and a power conversion device.

A Co alloy target comprising 1 to 10 atomic % of Zr and 1 to 10 atomic % of Nb and/or Ta, the balance being unavoidable impurities and Co, is produced by rapidly solidifying a melt of the Co alloy to produce an alloy powder, classifying the alloy powder to maximum particle size of 500 μm or less, and pressure-sintering the classified alloy powder.

Mn alloy materials for magnetic materials contain 500 ppm or less, preferably 100 ppm or less, oxygen, 100 ppm or less, probably 20 ppm or less, sulfur, and preferably a total of 1000 ppm or less, more preferably 500 ppm or less, impurities (elements other than Mn and the alloying component). The alloying component that forms an alloy with Mn is one or two or more elements selected from the group consisting of Fe, Ir, Pt, pd, Rh, Ru, Ni, Cr and Co. Sputtering targets formed from the Mn alloy materials for use in depositing magnetic thin film, and the thin films so produced.