15 results about "Ferromagnetic thin films" patented technology

A quantum frequency converter includes a laminate including at least one topological insulator film and at least one ferromagnetic film that are laminated together. The laminate includes an interface between the topological insulator film and the ferromagnetic film and configured to be irradiated with laser light. The quantum frequency converter includes a magnetic field applying unit configured to apply a magnetic field with a component perpendicular to the interface to the laminate, and a microwave transceiver configured to transmit and receive a microwave to and from the laminate.

The invention discloses a skyrmion track memory based on an artificial ferromagnet, and belongs to the technical field of spintronics and nano magnetic devices. The device comprises a heavy metal layer, an artificial ferromagnet layer and a read-write end, the artificial ferromagnet layer is composed of a plurality of parallel Skyrmion strip-shaped racing tracks. Each Skyrmion strip-shaped racing track comprises a lower ferromagnetic film, a non-magnetic middle layer and an upper ferromagnetic film, the upper ferromagnetic film and the lower ferromagnetic film are made of magnetic materials with different saturation magnetization intensities, and the net magnetization intensities of the adjacent Skyrmion strip-shaped racing tracks are positive and negative, so that the Skyrmion in the adjacent racing tracks deflect in opposite directions. The two opposite lateral displacements cancel each other at the boundary, causing the magnetic skyrmion to move along the boundary. According to the invention, the problem of inaccurate positioning caused by the Hall effect of the Skyrmion is solved, the read-write precision, reliability and expandability of the device are remarkably improved, and powerful technical support is provided for high-performance development and practical application of the Skyrmion track memory.

A semiconductor device has a substrate. A semiconductor die is disposed over the substrate. A first encapsulant is deposited over the semiconductor die. A ferromagnetic film is disposed over the first encapsulant. A second encapsulant is deposited over the ferromagnetic film. A shielding layer is optionally formed over the substrate, first encapsulant, and second encapsulant.

The invention discloses a voltage regulation and control magnetic memory based on a two-dimensional ferromagnetic / multiferroic heterostructure and a preparation method, the device is composed of a substrate, a multiferroic thin film layer, a two-dimensional ferromagnetic thin film layer, an upper electrode and a lower electrode, an uncompensated magnetic moment is generated on an interface through ferroelectric polarization of the multiferroic layer, and the uncompensated magnetic moment and the two-dimensional ferromagnetic layer form exchange bias. And the ferroelectric polarization direction can be reversed by applying low voltage, so that the external magnetic field-free and nonvolatile regulation and control of the magnetization of the two-dimensional ferromagnetic layer are realized. The preparation method comprises the steps of magnetron sputtering growth of the multiferroic thin film, interface annealing treatment, molecular beam epitaxial growth of the two-dimensional ferromagnetic thin film and electrode preparation. The device has strong interface coupling, low power consumption, high regulation and control amplitude and good cycling stability at room temperature, wide-range voltage regulation and control of exchange bias can be realized, and a reliable technical scheme is provided for a novel low-power-consumption nonvolatile memory.

The present disclosure relates to a magnetic tunnel junction with double fixed layers, a magnetic memory chip, and a manufacturing method thereof. The present disclosure provides a magnetic tunnel junction with double fixed layers, a magnetic memory chip, and a manufacturing method thereof, including a structure of a bottom fixed layer formed by three layers of ferromagnetic thin film structures coupled in an anti-parallel manner, and then, from the perspective of the coupling magnetic field of the bottom fixed layer to the free layer, a thickness and a material of each layer of the ferromagnetic thin film structure of the above-mentioned structure are provided, and, on the basis of the bottom fixed layer, a structure of the top fixed layer is further provided. The present disclosure provides a magnetic tunnel junction with double fixed layers, a magnetic memory chip, and a manufacturing method thereof.

The invention discloses a microwave / direct-current magnetic field detection system capable of in-situ switching and controlled by spin torque, and the system is characterized in that a magneton generation device is formed by a microwave device driven by a signal sent by a network analyzer and electromagnets at two sides of a ferromagnetic film; a microwave signal generated by the network analyzer generates a microwave magnetic field through the microwave device; the electromagnets located on the two sides of the microwave device generate direct-current magnetic fields with the direction perpendicular to the microwave magnetic field, and magneton signals in the ferromagnetic film are jointly excited. By selecting the relative spatial position of the microwave device and the thin film material, the interaction of microwave photons and magnetons is formed, and photon-magneton coupling is realized. And applying currents with different magnitudes or directions to the spin Hall angle film layer to change the coupling state of magnetons and microwave photons in the ferromagnetic film so as to realize electric control in-situ switching of two coupling states of anti-cross coupling and dissipative coupling. The method realizes conversion of different detection modes of two signals to be detected, and has the advantages of simplicity in operation, wider application and the like.

The application belongs to the technical field of semiconductor thin film materials, and particularly relates to a diluted magnetic semiconductor thin film for In-based semiconductor materials. 2‑x M x O3, the doping element is a non-magnetic transition metal M, which is one or more of Fe, Mn, Co or Ni, and 0 < x < 0.1. The application adopts a laser pulse deposition technology (PLD) based on a ceramic target material to prepare an InO-based diluted magnetic semiconductor thin film with room-temperature ferromagnetism by means of a transition metal ion as a donor doping mode. The PLD technology of the application can incorporate a high proportion of transition metal ions into the InO lattice, and a large number of lattice defects can be introduced by controlling the deposition conditions, so that a ferromagnetic thin film material higher than room temperature is induced, which can be applied to spin electronic devices.

This invention belongs to the field of quantum sensors and discloses a diamond spin quantum sensor and its fabrication method. The fabrication method includes: cleaning and polishing a single-crystal diamond substrate; and preparing a nitrogen-vacancy color center with a density greater than 10 on the single-crystal diamond substrate using microwave plasma chemical vapor deposition. 16 cm ‑3 A diamond spin quantum sensor was obtained by fabricating an antiferromagnetic NiO thin film on a diamond film using radio frequency magnetron sputtering. This invention comprises a diamond thin film with a high concentration of nitrogen-vacancy centers. Nitrogen-vacancy center measurements exhibit extremely high spatial resolution and can detect nanoscale magnetic field changes. The diamond spin quantum sensor is applied to the precise measurement of the magnetic moment of antiferromagnetic thin films and the magnetic coupling effect at the interface of antiferromagnetic / ferromagnetic heterojunctions. Furthermore, its fabrication method is simple and economical, providing a possibility for the application of diamond nitrogen-vacancy center materials in the field of quantum magnetic sensors.

The invention provides a preparation method of a spin orbit moment enhanced single-layer ferromagnetic film. The preparation method comprises the following steps: step 1, depositing a single-layer ferromagnetic film on a substrate; and step 2, carrying out ion beam etching on the single-layer ferromagnetic thin film so as to reduce the thickness of the single-layer ferromagnetic thin film to a set value. According to the invention, the proportion of current overturning magnetic moment can be improved, and self-overturning is realized.

The invention relates to the technical field of spintronics, in particular to a method for enhancing magnetic performance of a surface acoustic wave regulation and control ferromagnetic thin film material.The method comprises the steps that a Pt / CoxTb1-x / Si3N4 multilayer film is deposited on the surface of a lithium niobate substrate, then the obtained multilayer film is regulated and controlled through surface acoustic waves, and the value range of x is larger than 0 and smaller than 1. According to the method, the regulation and control effect of the surface acoustic wave on the magnetic performance of the ferromagnetic thin film material can be remarkably enhanced, the performance of a spinning electronic device is further improved, a promising method is provided for developing the high-performance and low-power-consumption spinning electronic device, and by researching regulation and control of the surface acoustic wave on the magnetic performance of the ferromagnetic thin film material, the magnetic performance of the ferromagnetic thin film material is improved. Particularly, the understanding of the acoustic surface wave induced modulation of the ferromagnetic film material near the compensation point is enhanced through the change of a coercive field and domain wall dynamics near the magnetic moment compensation point, and a new view angle and a new way are opened up for the design and development of a new generation of spinning electronic devices.

Magnetic device 1, 11 for neuromorphic in-memory computing has spaced ferromagnetic thin-film nanomagnetic structures 2 (may be surface coated with ionic material), each with magnetic state, on surface 4 of a spin current generation layer 3 (may be heavy metal) configured to convert electrical current [jc, figure 2] into spin current [js, figure 2] for controlling a magnetic state of the ferromagnetic structures. Spin current may exert spin torque on the ferromagnetic structures or spin current generation layer. Subsets of ferromagnetic structures may be sized with different resonant frequencies and may form an artificial spin ice. The device may be part of crossbar array and integrated circuit. Reading a state may include spin torque ferromagnetic resonance measurements indicating frequencies corresponding to spin wave modes, including sensing a rectified voltage. Inputting data may include driving AC current through the spin current generation layer with frequency near a resonant frequency of a ferromagnetic structure and with amplitude for inducing ferromagnetic resonance, and exposing the device to a magnetic field, causing magnetic state switching. Device operation may include applying voltage across the ionic material layer, causing ion migration into / from a ferromagnetic structure; or training by determining an improvement in performance metric / loss function / error value.

The application discloses a skyrmion racetrack memory based on artificial ferrimagnet, and belongs to the technical field of spin electronics and nanomagnetic devices. The device comprises a heavy metal layer, an artificial ferrimagnet layer and a read-write end; the artificial ferrimagnet layer is composed of a plurality of parallel skyrmion strip racetracks; the skyrmion strip racetrack comprises a lower ferromagnetic film, a non-magnetic intermediate layer and an upper ferromagnetic film; the upper and lower ferromagnetic films are magnetic materials with different saturation magnetization intensities; and the net magnetization intensities of adjacent skyrmion strip racetracks are positive and negative, so that skyrmions in adjacent racetracks are deflected in opposite directions, and the two opposite transverse displacements are offset at the boundary, so that the magnetic skyrmions move along the boundary. The application solves the problem of inaccurate positioning caused by the skyrmion Hall effect, significantly improves the read-write precision, reliability and scalability of the device, and provides strong technical support for the high-performance development and practical application of the skyrmion racetrack memory.

A kind of test system, method and magneto-optical kerr effect criterion method of high-order magneto-optical kerr effect in ferromagnetic film belong to the field of spintronics and magneto-optics. By building a magneto-optical kerr detection light path, the direction of the external magnetic field is regulated by the quadrupole magnet to regulate the magnetic moment direction of the sample, and the light intensity change curve under the rotating magnetic field is detected by the photodetector. Whether the sample has second-order magneto-optical kerr effect (QMOKE) is characterized, and the intensity is quantitatively observed. The method only needs a single light intensity change curve obtained by vertical incidence as the characterization basis of QMOKE, and the measurement method of small step (5°) rotation of external magnetic field comprehensively characterizes the influence of magnetic field direction on QMOKE signal, and can calculate QMOKE intensity according to amplitude, simplifies the steps of separating first-order magneto-optical kerr effect (LMOKE) and QMOKE, and simplifies the characterization criterion of QMOKE effect of ferromagnetic film system, especially Fe structure film.

The present invention relates to the field of magnetic memory chips in integrated circuits, and in particular to a dual-pinned magnetic tunnel junction, a magnetic memory chip and manufacturing methods therefor. The present invention provides a dual-pinned magnetic tunnel junction, a magnetic memory chip and manufacturing methods therefor. The dual-pinned magnetic tunnel junction comprises a structure in which a bottom pin layer is formed by three ferromagnetic thin film structure layers by means of anti-parallel coupling. Then, the thickness and material of each ferromagnetic thin film structure layer of the structure are provided from the perspective of a coupling magnetic field from the bottom pin layer to a free layer, and the structure of a top pin layer is further provided on the basis of the bottom pin layer. The present invention provides manufacturing methods for a dual-pinned magnetic tunnel junction and a magnetic memory chip. The present invention greatly reduces the energy consumption for writing information into STT-MTJ-based MRAM chips, greatly increases the durability of the STT-MTJ-based MRAM chips, and achieves the large-scale application of MRAMs as replacements for DRAMs and SRAMs.

The application discloses a temperature sensor assembly, a temperature measuring method and system, and is based on a ferromagnetic film. The physical characteristics that the temperature has a relevant influence on the size of an abnormal Hall coefficient or a vertical magnetization intensity are utilized to prepare the micron size level temperature sensor device. The corresponding relationship curve between the abnormal Hall resistance difference and the temperature is established by measuring the change curve of the abnormal Hall resistance value and the vertical magnetic field size under different external temperatures. The polynomial fitting degree of the curve is high, the deviation between the test result and the fitting curve is small, and therefore the efficient measurement of the temperature in a wide measuring temperature range of 100K to 490K can be realized. Performance evaluation shows that the above-mentioned thin film structure has good vertical magnetic anisotropy, and the temperature sensor has good repeated test performance, temperature measuring durability, high temperature measuring precision and wide temperature measuring range.