3 results about "Ferromagnetic thin films" patented technology

The present disclosure relates to a magnetic tunnel junction with double fixed layers, a magnetic memory chip, and a manufacturing method thereof. The present disclosure provides a magnetic tunnel junction with double fixed layers, a magnetic memory chip, and a manufacturing method thereof, including a structure of a bottom fixed layer formed by three layers of ferromagnetic thin film structures coupled in an anti-parallel manner, and then, from the perspective of the coupling magnetic field of the bottom fixed layer to the free layer, a thickness and a material of each layer of the ferromagnetic thin film structure of the above-mentioned structure are provided, and, on the basis of the bottom fixed layer, a structure of the top fixed layer is further provided. The present disclosure provides a magnetic tunnel junction with double fixed layers, a magnetic memory chip, and a manufacturing method thereof.

A kind of test system, method and magneto-optical kerr effect criterion method of high-order magneto-optical kerr effect in ferromagnetic film belong to the field of spintronics and magneto-optics. By building a magneto-optical kerr detection light path, the direction of the external magnetic field is regulated by the quadrupole magnet to regulate the magnetic moment direction of the sample, and the light intensity change curve under the rotating magnetic field is detected by the photodetector. Whether the sample has second-order magneto-optical kerr effect (QMOKE) is characterized, and the intensity is quantitatively observed. The method only needs a single light intensity change curve obtained by vertical incidence as the characterization basis of QMOKE, and the measurement method of small step (5°) rotation of external magnetic field comprehensively characterizes the influence of magnetic field direction on QMOKE signal, and can calculate QMOKE intensity according to amplitude, simplifies the steps of separating first-order magneto-optical kerr effect (LMOKE) and QMOKE, and simplifies the characterization criterion of QMOKE effect of ferromagnetic film system, especially Fe structure film.

The present invention relates to the field of magnetic memory chips in integrated circuits, and in particular to a dual-pinned magnetic tunnel junction, a magnetic memory chip and manufacturing methods therefor. The present invention provides a dual-pinned magnetic tunnel junction, a magnetic memory chip and manufacturing methods therefor. The dual-pinned magnetic tunnel junction comprises a structure in which a bottom pin layer is formed by three ferromagnetic thin film structure layers by means of anti-parallel coupling. Then, the thickness and material of each ferromagnetic thin film structure layer of the structure are provided from the perspective of a coupling magnetic field from the bottom pin layer to a free layer, and the structure of a top pin layer is further provided on the basis of the bottom pin layer. The present invention provides manufacturing methods for a dual-pinned magnetic tunnel junction and a magnetic memory chip. The present invention greatly reduces the energy consumption for writing information into STT-MTJ-based MRAM chips, greatly increases the durability of the STT-MTJ-based MRAM chips, and achieves the large-scale application of MRAMs as replacements for DRAMs and SRAMs.