The invention discloses a room temperature transparent ferromagnetic semiconductor material and a preparation method thereof, which belong to the technical field of semiconductors. The room temperature transparent ferromagnetic semiconductor is prepared by adding semiconductor functional elements on the basis of an amorphous material with intrinsic room temperature magnetism to prepare a new type of ferromagnetic semiconductor material. The specific embodiment is prepared by magnetron sputtering method, and the semiconductor material composition is obtained as Co x (B a Fe b Ta c ) y o 100-x-y , where x and y are atomic percentages, and the value range is: 10≤x≤40, 19≤y≤55, a>b>c, cy≥3. The material is a direct bandgap semiconductor with an optical bandgap of ~3.6eV, a Curie temperature higher than room temperature (about 163 degrees Celsius), and unique optical, electrical, and magnetic properties. The preparation process is simple, and it is an excellent candidate material for magneto-optical, photoelectric, and room-temperature controllable electronic spin devices such as spin field effect transistors and spin light-emitting diodes.