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A kind of room temperature transparent ferromagnetic semiconductor material and its preparation method

A semiconductor and transparent technology, applied in the direction of material selection, inorganic material magnetism, and manufacturing/processing of electromagnetic devices, etc., can solve the problems of electronic spin devices, elevation, etc., and achieve excellent magnetic soft magnetic properties and preparation technology Simple, Environmentally Friendly Effects

Active Publication Date: 2016-06-15
TSINGHUA UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the highest Curie temperature of typical dilute magnetic semiconductors reported so far is only 190K, which is still far below room temperature, and cannot meet the requirements of electronic spin devices working at room temperature.
Studies have shown that the Curie temperature of dilute magnetic semiconductor materials increases with the increase of the content of external magnetic elements. However, due to the influence of the upper limit of the solid solubility of external elements by the crystal structure of the material, the Curie temperature can be greatly increased on this basis and reach The chances of room temperature are slim

Method used

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  • A kind of room temperature transparent ferromagnetic semiconductor material and its preparation method
  • A kind of room temperature transparent ferromagnetic semiconductor material and its preparation method
  • A kind of room temperature transparent ferromagnetic semiconductor material and its preparation method

Examples

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Effect test

Embodiment 1

[0030] Preparation of room temperature transparent ferromagnetic semiconductor Co by powder target 20.3 (B 0.62 Fe 0.26 Ta 0.12 ) 40.7 o 39.0 Material. The specific operation steps are as follows: select Co, Fe, Ta and B raw materials with a powder particle size of less than 100 microns; fully mix the weighed powder materials; prepare Al target materials by wire cutting according to the target size of the magnetron sputtering equipment container; put the fully mixed powder raw material into the target container, and flatten the surface to be used for magnetron sputtering coating; the magnetron sputtering equipment is pre-vacuumized to ~10 -4 Pa, into the high-purity inert gas Ar, the working pressure is 0.5-10Pa.

[0031] The as-prepared room temperature transparent ferromagnetic semiconductor Co 20.3 (B 0.62 Fe 0.26 Ta 0.12 ) 40.7 o 39.0 Materials are structurally characterized by TEM and STEM, such as figure 1 The film structure shown is an amorphous structure; ...

Embodiment 2

[0033]Fabrication of room temperature transparent ferromagnetic semiconductor Co using oxide targets 31.9 (B 0.47 Fe 0.36 Ta 0.17 ) 40.2 o 27.9 Material. The specific operation steps are as follows: the oxide target is prepared by powder sintering method; the magnetron sputtering equipment is pre-vacuumized to ~10 -4 Pa, into the high-purity inert gas Ar, the working pressure is 0.5-10Pa.

[0034] The as-prepared room temperature transparent ferromagnetic semiconductor Co 31.9 (B 0.47 Fe 0.36 Ta 0.17 ) 40.2 o 27.9 The material is characterized by TEM and STEM; electrical measurement: the instrument used is QuantumDesign's PPMS-9, such as image 3 As shown, the resistivity versus temperature curve presents the negative temperature-dependent characteristics of the resistivity of typical semiconductor materials, the low-temperature region (below 10K) presents an electron hopping conduction mechanism, and the relatively high-temperature region (above 10K) presents a co...

Embodiment 3

[0036] Fabrication of room temperature transparent ferromagnetic semiconductor Co by using metal alloy targets 32.4 (B 0.66 Fe 0.44 Ta 0.09 ) 35.2 o 32.4 Material. The specific operation steps are as follows: the raw materials are bulk Co, Fe, Ta and B, and the raw materials are mixed and the target is prepared by melting and casting; the magnetron sputtering equipment is pre-evacuated to ~10 -4 Pa, high-purity inert gas Ar and oxygen are introduced, the partial pressure ratio of the two is 9:1, and the working pressure is 0.5-10Pa.

[0037] The as-prepared room temperature transparent ferromagnetic semiconductor Co 32.4 (B 0.66 Fe 0.44 Ta 0.09 ) 35.2 o 32.4 The structure of the material is characterized by TEM and STEM; electrical measurement: the instrument used is PPMS-9 from QuantumDesign Company, such as Figure 8 Typical anomalous Hall effect occurring in ferromagnetic materials shown, Figure 9 The abnormal magnetoresistance phenomenon shown; the transmitta...

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Abstract

The invention discloses a room temperature transparent ferromagnetic semiconductor material and a preparation method thereof, which belong to the technical field of semiconductors. The room temperature transparent ferromagnetic semiconductor is prepared by adding semiconductor functional elements on the basis of an amorphous material with intrinsic room temperature magnetism to prepare a new type of ferromagnetic semiconductor material. The specific embodiment is prepared by magnetron sputtering method, and the semiconductor material composition is obtained as Co x (B a Fe b Ta c ) y o 100-x-y , where x and y are atomic percentages, and the value range is: 10≤x≤40, 19≤y≤55, a>b>c, cy≥3. The material is a direct bandgap semiconductor with an optical bandgap of ~3.6eV, a Curie temperature higher than room temperature (about 163 degrees Celsius), and unique optical, electrical, and magnetic properties. The preparation process is simple, and it is an excellent candidate material for magneto-optical, photoelectric, and room-temperature controllable electronic spin devices such as spin field effect transistors and spin light-emitting diodes.

Description

technical field [0001] The invention relates to the technical field of semiconductors, and relates to a room temperature transparent ferromagnetic semiconductor material and a preparation method thereof. Background technique [0002] Magnetic semiconductors have both magnetic and semiconductor properties, and can achieve nearly complete spin polarization by manipulating electron spins, providing a new conduction method and device concept. This feature can be used to develop a new generation of electronic devices, such as spin field effect transistors and spin light-emitting diodes, which will greatly reduce energy consumption, increase integration density, and increase data computing speed. It will have a very wide range in the future electronics industry. application prospects. At present, the research on magnetic semiconductors is mainly based on dilute magnetic semiconductors. Intrinsic magnetism is obtained by adding transition group magnetic elements to semiconductor m...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01F1/40H01L43/10H01L43/12
Inventor 陈娜章晓中姚可夫
Owner TSINGHUA UNIV
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