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Room-temperature transparent ferromagnetic semiconductor material and preparation method thereof

A semiconductor and transparent technology, which is applied in the selection of materials, the magnetism of inorganic materials, the manufacture/processing of electromagnetic devices, etc., can solve the problems of high rise and cannot meet the requirements of electronic spin devices, and achieves simple preparation process and excellent magnetic softness. Magnetic properties, environmentally friendly effects

Active Publication Date: 2014-01-01
TSINGHUA UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the highest Curie temperature of typical dilute magnetic semiconductors reported so far is only 190K, which is still far below room temperature, and cannot meet the requirements of electronic spin devices working at room temperature.
Studies have shown that the Curie temperature of dilute magnetic semiconductor materials increases with the increase of the content of external magnetic elements. However, due to the influence of the upper limit of the solid solubility of external elements by the crystal structure of the material, the Curie temperature can be greatly increased on this basis and reach The chances of room temperature are slim

Method used

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  • Room-temperature transparent ferromagnetic semiconductor material and preparation method thereof
  • Room-temperature transparent ferromagnetic semiconductor material and preparation method thereof
  • Room-temperature transparent ferromagnetic semiconductor material and preparation method thereof

Examples

Experimental program
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Embodiment 1

[0030] Preparation of room temperature transparent ferromagnetic semiconductor Co by powder target 20.3 (B 0.62 Fe 0.26 Ta 0.12 ) 40.7 o 39.0 Material. The specific operation steps are as follows: select Co, Fe, Ta and B raw materials with a powder particle size of less than 100 microns; fully mix the weighed powder materials; prepare Al target materials by wire cutting according to the target size of the magnetron sputtering equipment container; put the fully mixed powder raw material into the target container, and flatten the surface to be used for magnetron sputtering coating; the magnetron sputtering equipment is pre-vacuumized to ~10 -4 Pa, into the high-purity inert gas Ar, the working pressure is 0.5-10Pa.

[0031] The as-prepared room temperature transparent ferromagnetic semiconductor Co 20.3 (B 0.62 Fe 0.26 Ta 0.12 ) 40.7 o 39.0 Materials are structurally characterized by TEM and STEM, such as figure 1 The film structure shown is an amorphous structure; ...

Embodiment 2

[0033]Fabrication of room temperature transparent ferromagnetic semiconductor Co using oxide targets 31.9 (B 0.47 Fe 0.36 Ta 0.17 ) 40.2 o 27.9 Material. The specific operation steps are as follows: the oxide target is prepared by powder sintering method; the magnetron sputtering equipment is pre-vacuumized to ~10 -4 Pa, into the high-purity inert gas Ar, the working pressure is 0.5-10Pa.

[0034] The as-prepared room temperature transparent ferromagnetic semiconductor Co 31.9 (B 0.47 Fe 0.36 Ta 0.17 ) 40.2 o 27.9 The structure of the material is characterized by TEM and STEM; electrical measurement: the instrument used is PPMS-9 from Quantum Design Company, such as image 3 As shown, the resistivity versus temperature curve presents the negative temperature-dependent characteristics of the resistivity of typical semiconductor materials, the low-temperature region (below 10K) presents an electron hopping conduction mechanism, and the relatively high-temperature reg...

Embodiment 3

[0036] Fabrication of room temperature transparent ferromagnetic semiconductor Co by using metal alloy targets 32.4 (B 0.66 Fe 0.44 Ta 0.09 ) 35.2 o 32.4 Material. The specific operation steps are as follows: the raw materials are bulk Co, Fe, Ta and B, and the target is prepared by melting and casting after mixing the raw materials; the magnetron sputtering equipment is pre-evacuated to ~10 -4 Pa, high-purity inert gas Ar and oxygen are introduced, the partial pressure ratio of the two is 9:1, and the working pressure is 0.5-10Pa.

[0037] The as-prepared room temperature transparent ferromagnetic semiconductor Co 32.4 (B 0.66 Fe 0.44 Ta 0.09 ) 35.2 o 32.4 The structure of the material is characterized by TEM and STEM; electrical measurement: the instrument used is PPMS-9 from Quantum Design Company, such as Figure 8 Typical anomalous Hall effect occurring in ferromagnetic materials shown, Figure 9 The abnormal magnetoresistance phenomenon shown; the transmitta...

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Abstract

The invention belongs to the technical field of semiconductors and discloses a room-temperature transparent ferromagnetic semiconductor material and a preparation method thereof. The room-temperature transparent ferromagnetic semiconductor material is prepared through a technical scheme of preparing novel ferromagnetic semiconductor materials by adding semiconductor functional elements on the basis of amorphous materials with built-in room-temperature magnetism. In an embodiment, the room-temperature transparent ferromagnetic semiconductor material is prepared through magnetron sputtering, the components of the obtained semiconductor materials are Cox(BaFebTac)yO100-x-y, wherein the x and the y are atomic percentages, and the value ranges are that 10<=x<=40, 19<=y<=55, a>b>c and cy>=3. The room-temperature transparent ferromagnetic semiconductor material is a direct band-gap semiconductor with an optical band gap of -3.6 eV and a Curie temperature higher than the room temperature and integrates optical, electrical and magnetic characters; the preparation process is simple; the room-temperature transparent ferromagnetic semiconductor material is an outstanding alternative material applicable to magneto-optical, photoelectric and room-temperature controllable electronic self-spinning devices such as self-spinning effect transistors and self-spinning light emitting diodes.

Description

technical field [0001] The invention relates to the technical field of semiconductors, and relates to a room temperature transparent ferromagnetic semiconductor material and a preparation method thereof. Background technique [0002] Magnetic semiconductors have both magnetic and semiconductor properties, and can achieve nearly complete spin polarization by manipulating electron spins, providing a new conduction method and device concept. This feature can be used to develop a new generation of electronic devices, such as spin field effect transistors and spin light-emitting diodes, which will greatly reduce energy consumption, increase integration density, and increase data computing speed. It will have a very wide range in the future electronics industry. application prospects. At present, the research on magnetic semiconductors is mainly based on dilute magnetic semiconductors. Intrinsic magnetism is obtained by adding transition group magnetic elements to semiconductor m...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01F1/40H01L43/10H01L43/12H10N50/01
Inventor 陈娜章晓中姚可夫
Owner TSINGHUA UNIV
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