100 results about "Spin polarization" patented technology

The invention provides a method and device for calculating the electron spinning state of an iron-based biphase composite magnetic material, and relates to the technical field of magnetic materials. The method comprises the following steps: establishing a heterojunction model of a biphase composite magnetic material; according to the method, generalized gradient approximation in a density functional theory is adopted as an exchange-correlation functional, relaxation is carried out on atomic positions in a heterojunction model, so that the total energy of a system is the lowest, and geometric structure optimization is carried out on the heterojunction model; performing spin polarization calculation on the optimized heterojunction model to obtain spin upward state densities and spin downward state densities of different atoms in the heterojunction model, and analyzing electronic state distribution near a Fermi level; and quantitatively evaluating the magnetic characteristics of the heterojunction model according to the spin upward state density and the spin downward state density of each atom. According to the method, an interface magnetic coupling mechanism can be disclosed, and a theoretical basis can be provided for development of a high-performance magnetically controlled reactor iron core material.

The invention provides a semiconductor laser element with a spin polarization sub-layer. The semiconductor laser element comprises a substrate, a lower limiting layer, a lower waveguide layer, an active layer, an upper waveguide layer and an upper limiting layer which are sequentially arranged from bottom to top. According to the semiconductor laser element, the spin polarization sub-layers of a multi-layer structure are arranged between the upper limiting layer and the upper waveguide layer in the semiconductor laser element, and the electron mobility distribution characteristic and the piezoelectric polarization coefficient distribution characteristic of each spin polarization sub-layer are limited. Specific electron mobility distribution and piezoelectric polarization coefficient distribution of the spin polarization sub-layer form an asymmetric discrete potential barrier, lattice distortion structure polarization is modulated, charge dipole momentum net accumulation is increased, the piezoelectric polarization effect of the active layer is regulated and controlled, the quantum restriction effect is suppressed, energy band inclination of the active layer is reduced, and hole injection band order is reduced. The overlapping probability of the electron hole wave function is improved, and the internal quantum efficiency is improved.

The invention relates to the field of quantum sensing, and provides an SERF atom magnetometer based on pi pulse pumping detection and a magnetic field detection method. According to the method, 770nm pumping light and 795nm detection light are modulated into an alternating pulse sequence through an acousto-optic modulator, optical frequency shift interference is avoided by adopting a time division multiplexing technology, and pumping pulses are configured to have a pi rotation effect so as to enhance atomic spin polarization. The device comprises an alkali metal gas chamber with multiple layers of magnetic shielding, a graphene heat conduction non-magnetic heating system based on infrared laser, a time division control light path module and a synchronous signal processing unit. Electric heating is replaced by laser heating to eliminate magnetic noise, a pulse interval tau adjustable mechanism is utilized to balance sensitivity and measuring range, and common-mode noise is suppressed in combination with differential photoelectric detection and phase-locked amplification technologies. The alternating current stark effect caused by continuous illumination and magnetic field interference of traditional heating are overcome, the magnetic field measurement precision, the system stability and the signal-to-noise ratio are improved, and a high-precision weak magnetic field detection scheme is provided for biomedical detection and quantum navigation.

Disclosed is a spin light emitting device based on two-dimensional material. The light emitting device comprises: a two-dimensional structure configured to emit circularly polarized light in response to spin-polarized carrier injection, wherein the two-dimensional structure is a two-dimensional Van der Waals heterostructure; a spin injector configured to inject spin-polarized carriers into the two-dimensional Van der Waals heterostructure, wherein the light emitted by the two-dimensional structure has a circular polarization state determined by the magnetization state of the spin injector; and a magnetization controller configured to change the magnetization state of the spin injector. The spin-based light emitting device emits circularly polarized light or single photons on the basis of two-dimensional material at room temperature without introducing a magnetic field, and has the capability of electrical control.

A pump-probe non-orthogonal angle calibration method for atomic spin inertial measurement is used to accurately evaluate the pump-probe laser non-orthogonal angle, characterized in that it comprises the following steps: step 1, place the atomic spin inertial measurement device in the working state, adjust the z-axis magnetic field bias to the compensation point, and record the initial value of the longitudinal electron spin polarization at this time step 2, apply a magnetic field B of 0.075 nT in the y-axis direction y ; step 3, change the pump laser power, record the pump laser power value I in , the corresponding inertial output signal steady-state value S x and the longitudinal electron spin polarization value; step 4, use the particle swarm algorithm to fit the parameters in step 3 to obtain the value of the pump-probe laser non-orthogonal angle α.

The application relates to a light polarization effect detection method of a SERF atomic spin gyroscope. 3 The atomic spin system of He, 2, the pumping light path is turned on, polarization operation is carried out on the two kinds of gases in the atomic gas chamber, the transmission of the electron angular momentum to the nuclear spin angular momentum is realized; 3, the detection light path is turned on, and the light signal is detected; 4, a single pulse disturbance of an alternating magnetic field is applied in the y direction, the K atom is deflected at a small angle, the Larmor precession is generated, the K and 3 The strong coupling effect of He atoms, the precession frequency of the K atoms under different main magnetic fields is linearly fitted, the slope value of the linear fitting is used to calculate the electron spin polarization rate, the intercept value when the applied main magnetic field value is 0 is used to calculate the equivalent magnetic field generated by the nuclear spin, and the direct and indirect polarization effects of the pumping light on the two kinds of atoms are detected by the slope and the intercept value. The effects of the two kinds of atoms polarized directly and indirectly by light are presented in the form of linear numerical fitting.

The application discloses a method for reducing energy consumption of magnetic storage unit flip, relates to the technical field of magnetic storage unit, and aims at reducing energy consumption of information writing. The magnetic storage unit is caused to occur magnetic moment flip through a spin-polarized current. The spin-polarized current gradually changes from an initial value to zero with time. The size of the spin-polarized current is as follows: I t =I0-at; wherein, I t is the spin-polarized current at t nanoseconds since the initial moment, I0 is the initial value of the spin-polarized current at the initial moment, and a is a constant, and a represents a gradual change coefficient. The application has the advantages of stable information writing and low energy consumption.

The application discloses a dead-zone-free atomic magnetometer device and method based on pumping-detection information fusion and relates to the technical field of atomic magnetometers. Through optical-magnetic double-resonance pulse modulation, atoms can generate free precession signals in each magnetic field direction. In the spin polarization free precession stage, the output signals of pumping light and detection light are collected and detected, the dead zones of the output signals of the two light beams are complementary, one signal with a high signal-to-noise ratio is selected as an output through signal processing, and then a dead-zone-free high-sensitivity optical pumping atomic magnetometer is realized. The application realizes the full-range dead-zone-free atomic magnetometer without reducing the sensitivity of the magnetometer, and is helpful to the further application of the optical pumping atomic magnetometer in the field of space magnetic field measurement in the future.

A method for measuring and detecting weak SERF magnetic fields based on laser spatial modes avoids signal drift caused by fluctuations in laser power by directly measuring the spatial displacement of the detection laser beam. The method includes: Step 1, establishing a Sagnac interference loop using the transmitted and reflected light formed by the first polarizing beam splitter on the laser emission path of the alkali metal gas cell; Step 2, after mutual interference, the transmitted and reflected light return to the first polarizing beam splitter, combine, and exit the Sagnac interference loop, then pass sequentially through a second λ / 2 waveplate and a second polarizing beam splitter to complete a selection process; Step 3, using a quadrant detector to identify the change in detection beam displacement caused by the linear polarization rotation angle of the detection laser after the selection process; Step 4, determining the linear polarization rotation angle by the change in detection beam displacement, and then determining the x-direction component of the electron spin polarization vector using the linear polarization rotation angle, thereby achieving the measurement of weak SERF magnetic fields.

The application belongs to the field of material calculation simulation, and relates to a prediction method for magnetic coupling evolution characteristics of two-dimensional Janus materials based on first principles. The technical problem to be solved is that the existing technology fails to uniformly analyze the magnetic freedom and structural evolution behavior, resulting in interlayer abnormal shrinkage, spontaneous bond collapse and lack of judgment basis for the coupling relationship between magnetism and interlayer structure. The technical scheme comprises the following steps: establishing a crystal structure model taking MA2Z4 material as a mother body; cutting and constructing an asymmetric Janus single layer; constructing a double-layer AA stacking initial model; performing geometric structure optimization and static self-consistent calculation under non-spin polarization and spin polarization conditions respectively; comparing the interlayer spacing, magnetic moment distribution and electronic state characteristics under the two conditions; analyzing the inhibitory effect of interface magnetism on interlayer bonding tendency by combining the electron localization function and the crystal orbital Hamiltonian population; and finally establishing the cooperative evolution relationship among magnetism, interlayer coupling and electronic structure, thereby providing a theoretical basis for identifying stable double-layer van der Waals configuration.

The invention provides a magnetic device and memory cell, and relates to the field of magnetic devices for memory including perovskite-based electrode materials, comprising: a spacer layer; a first magnetic electrode layer located on one side of the spacer layer; and a second magnetic electrode layer located on the other side of the spacer layer; the spacer layer comprises a perovskite nitride material or perovskite oxynitride material; the first magnetic electrode layer and the second magnetic electrode layer respectively comprises a metallic antiperovskite nitride material; the relative net magnetization orientation of the first magnetic electrode layer and the second magnetic electrode layer is switchable between a parallel net magnetization state or an antiparallel net magnetization state to control a spin-polarised current therethrough; the memory cell is applied to a memory or storage device, comprising the magnetic device, wherein the data is recordable as a parallel or antiparallel net magnetization state of the first magnetic electrode layer and the second magnetic electrode layer of the magnetic device, to solve the problems of high power consumption, poor thermal stability and limited scalability of existing magnetic devices.

A system comprising a quantum information engine (QIE). The QIE includes a topological surface state three-dimensional topological insulator (TSS-3DTI) to flow, in a first flow direction from an input side to an output side, electrons having a first spin-momentum. The TSS-3DTI includes a first surface. The first surface has first spin-momentum locked charge carriers and a plurality of first magnetic impurities having a second average nuclear spin polarization. The TSS-3DTI stores information in the first surface at the points of interaction that occur between the plurality of first magnetic impurities interacting with the flowing electrons to exchange, at each point of interaction, a nuclear spin of a respective first magnetic impurity with an electron spin of a respective flowing electron. The system can include at least one surface. The system can harvest energy from other integrated circuits. A method of storing quantum energy is also provided.

The invention provides a high-performance common-mode suppressor made of an amorphous material and used for CAN FD, and relates to the technical field of electromagnetic compatibility, the common-mode suppressor comprises a magnetic core, a coil, an insulating layer and a shielding shell, the magnetic core is a magnetic field folding resonance core formed by stacking multiple layers of amorphous sheets with non-uniform thicknesses, a miniature resonant cavity is embedded in each layer of amorphous sheet, and the coil is arranged in the shielding shell. The coil is a spin waveguide coil, the insulating layer is a liquid topological insulating layer, the shielding shell is an optomagnetic coupling shielding shell, the magnetic field folding resonance core utilizes a non-uniform thickness sheet and a size decreasing resonant cavity, high-density eddy current is formed through magnetic field folding, broadband noise energy of 1 kHz to 10 MHz is dissipated, and the noise energy of the broadband is reduced by combining the spin polarization effect of the spin waveguide coil. The time domain noise prediction unit provides extra 20-30dB attenuation for high-frequency noise, and meanwhile, the time domain noise prediction unit predicts noise waveform and dynamically adjusts impedance to improve suppression efficiency and realize ultrahigh suppression through a memristor and a CNTFET, and ensures signal integrity and remarkably reduces bit error rate through the synergistic effect of broadband dissipation and high-frequency impedance.

The present invention is entitled "Material Having Both Negative Spin Polarization and Negative Anisotropy." Aspects of the present disclosure generally relate to spintronic devices for use in magnetic media drives, magnetoresistive random access memory devices, magnetic sensors, or magnetic recording write heads. The spintronic device includes a multilayer structure having a negative anisotropy field and a negative spin polarization. The multilayer structure includes a plurality of layers, each of the plurality of layers including a first sublayer comprising Fe and a second sublayer comprising Co. At least one of the first sublayer and the second sublayer comprises one or more of Cr, V, and Ti. The first sublayers and the second sublayers alternate. The negative anisotropy field of the multilayer structure is between about -0.5 T and about -0.8 T, and the effective magnetization of the multilayer structure is between about 2.4 T and about 2.8 T.

The utility model relates to the technical field of sensors, in particular to a three-dimensional magnetic sensor based on spin orbit moment, which comprises a packaging shell and a sensor chip packaged in the packaging shell. Compared with the prior art, the utility model has the following advantages: the heat radiation fins are arranged on the side wall of the packaging shell, so that the heat radiation area is effectively increased, the heat radiation is accelerated, the stable performance of the sensor can still be maintained under the high-strength working condition, the service life is prolonged, and the sensor chip adopts a bottom-to-top stacked structure, so that the cost is reduced. Particularly, the combination of the spin-orbit coupling layer and the magnetic layer enables the sensor to respond to the change of an external magnetic field and detect the direction and the strength of the magnetic field through the change of magnetic moment, so that the accurate measurement of a three-dimensional magnetic field is realized, and the magnetic layer is prepared into a circular or annular shape, thereby facilitating the uniform distribution of the magnetic field. And the buffer layer is arranged between the magnetic layer and the spin-orbit coupling layer, so that the transmission efficiency of the spin-polarized current is improved.

The application discloses a light-magnetic modulation method and device for enhancing a single-beam free precession atomic magnetometer signal, and is based on synchronous light pumping technology and radio frequency magnetic field pulse control technology. Through light-magnetic modulation control, atomic spin polarization and free precession signal excitation are realized, so that more spin polarization components participate in free precession, and full-range signal enhancement of the single-beam free precession atomic magnetometer is realized. The application enhances the free precession signal and improves the signal-to-noise ratio, which is helpful to further improve the sensitivity of the single-beam free precession atomic magnetometer and is convenient for further application of the single-beam free precession atomic magnetometer in the field of quantum precise magnetic field measurement in the future.

A device is presented comprising at least one functional unit comprising first and second electrodes arranged in a spaced-apart relationship, and a chiral material, having spin-selective electron transport properties, located between and being in contact with inner surfaces of said first and second electrodes. This provides that, upon application of an electrons flux from the first electrode to the second electrode through the chiral material, a spin-polarized current is generated creating a thermal gradient across the chiral material, said thermal gradient effecting increase of temperature of the first electrode and decrease of temperature of the second electrode.

A columnar three-dimensional magnetic storage unit and a writing method are disclosed. In the magnetic storage unit, a central nanopillar is a nanopillar structure made of a material having a spin-orbit coupling effect; a magnetic storage layer wraps an outer side of the central nanopillar; a magnetic free layer surrounds and contacts the central nanopillar, with a polarization direction of the magnetic free layer extending axially along the nanopillar structure, and the magnetization reversal of the magnetic free layer depending on spin-polarized electrons, whose polarization direction is circumferential, generated by the central nanopillar, a damping-like torque and a field-like torque generated by the spin-polarized electrons synergistically achieving the magnetization precessional reversal of the magnetic free layer; a magnetic tunneling layer wraps an outer side of the magnetic free layer; a magnetic pinned layer wraps an outer side of the magnetic tunneling layer.

The application discloses a spin terahertz emitter and a chiral regulation method and a preparation method thereof, and belongs to the field of terahertz emission. The spin terahertz emitter is a three-layer structure including a ferromagnetic material layer, a non-ferromagnetic material layer and an antiferromagnetic layer. The antiferromagnetic layer adopts a preset crystal phase NiO single crystal antiferromagnetic material, CrSb or Mn3Sn. Under the irradiation of a femtosecond laser, the antiferromagnetic layer generates a laser impact magnetic moment. The precession of the laser impact magnetic moment generates a spin polarization current. The spin polarization current is injected into the non-ferromagnetic layer to generate a transient charge current, and then radiate terahertz, thereby realizing efficient spin terahertz radiation. Further, the magnetic moment direction of the ferromagnetic material layer in the spin terahertz emitter is reversed by rotating the direction of an external magnetic field or by a spin-orbit moment effect, thereby realizing efficient regulation of terahertz chirality.

This invention relates to the field of magnetic electronic devices, and more particularly to a magnetic tunnel junction, its fabrication method, and its applications. The magnetic tunnel junction includes: a lower electrode layer, a tunneling barrier layer, and an upper electrode layer; the tunneling barrier layer is disposed between the upper and lower electrode layers; wherein the tunneling barrier layer includes a self-supporting hafnium zirconium oxide film; the thickness of the self-supporting hafnium zirconium oxide film is 1-3 nm. The fabrication of this magnetic tunnel junction includes: firstly, growing an ultrathin LSMO / HZO bilayer structure on a substrate using PLD; utilizing LSMO as a sacrificial layer that can be selectively removed by a mixed solution of HCl and KI to release HZO in a self-supporting form; then, attaching the HZO to an FGT electrode to finally form the magnetic tunnel junction. The magnetic tunnel junction provided by this invention exhibits a tunneling magnetoresistance ratio (TMR) of approximately 140% at 2 K, indicating that the combination of this ultrathin ferroelectric barrier and the two-dimensional ferromagnetic electrode can achieve significant spin-polarized tunneling.

A method for measuring alkali metal atom equilibrium spin polarizability based on three-axis magnetic field steady-state response comprises the following steps: firstly, adjusting a device to a normal working state, then applying direct-current magnetic fields in x, y, y and z directions, changing the size of the magnetic field in the z direction, fitting the ratio of two outputs of the device with the square of the magnetic field applied in the z direction to obtain the size of the total relaxation rate, and finally measuring the alkali metal atom equilibrium spin polarizability. Obtaining the pressure broadening of the alkali metal air chamber by using the optical depth of the detection light at a low temperature, then changing the power of the detection light at a normal working temperature, establishing a transfer coefficient by using the pressure broadening and a fitting slope, and finally applying a direct-current magnetic field on a y axis and changing the size of the direct-current magnetic field, and fitting the relationship between the output of the device and the By-fit, so as to obtain the alkali metal air chamber. The final balance spin polarizability is obtained by combining the transfer coefficient, the SERF state required by normal work of the system is not damaged, the influence of temperature is avoided, the measurement error is small, and a more accurate measurement means is provided for further optimizing an SERF magnetic field measurement device to improve the sensitivity of the SERF magnetic field measurement device.

The application relates to a chiral spin-polarized circularly polarized light photoelectric device, preparation and application, and belongs to the technical field of optoelectronic devices. Specifically, a chiral molecule is introduced on the surface of a semiconductor, and a target of recognizing a light polarization state is realized by using spin polarization induced by a chiral structure. The chiral molecule will generate a Rashba-like spin-orbital coupling effect on the surface through spin exchange interaction, causing symmetry breaking, so as to generate a circularly polarized photocurrent effect under external light conditions. Different chiral (-L / -D) structure molecules have different response effects on polarized light. The chiral spin-polarized optoelectronic device shown in the application has a remarkable circularly polarized light detection effect, the experimental operation is simple and easy to implement, the device preparation cost is low, and the application of the chiral structure in a spin photoelectric device can be greatly expanded.

The invention discloses a nano-molecular device magnetic response modeling method and system based on machine learning, and relates to the technical field of electromagnetis.The system comprises an electromagnetic response testing module, an electromagnetic response modeling module and a parameter adjusting module; the electromagnetic response test module is used for detecting the current and voltage oscillation frequency between a reference magnetic layer and a free magnetic layer of the nano oscillator and detecting the external magnetic field intensity of the nano oscillator; the electromagnetic response modeling module is used for predicting the precession frequency deviation state of a free magnetic layer under current regulation by using a machine learning method, and predicting the voltage oscillation frequency change of the nano oscillator when the external magnetic field intensity changes; the parameter adjusting module is used for adjusting direct current spin polarization current and external magnetic field intensity, the electromagnetic response test module comprises a conductive electrode, a current detection unit, a voltage detection unit and a spectrum analysis module, and the device has the advantage of being efficient in adjustment.

This invention proposes a semiconductor laser device with a spin-polarized sublayer, comprising, from bottom to top, a substrate, a lower confinement layer, a lower waveguide layer, an active layer, an upper waveguide layer, and an upper confinement layer. This invention establishes a multi-layered spin-polarized sublayer structure between the upper confinement layer and the upper waveguide layer in the semiconductor laser device, and defines the electron mobility distribution and piezoelectric polarization coefficient distribution characteristics of each spin-polarized sublayer. The specific electron mobility distribution and piezoelectric polarization coefficient distribution of the spin-polarized sublayer form an asymmetric discrete potential barrier, modulating the polarization of the lattice distortion structure, increasing the net accumulation of charge dipole momentum, controlling the piezoelectric polarization effect of the active layer, suppressing the quantum confinement Stark effect, reducing the band tilt of the active layer, reducing the hole injection band order, increasing the overlap probability of electron-hole wave functions, and improving the internal quantum efficiency.

The application discloses a kind of magnetic random memory based on nonlinear spin polarization and its implementation method, belong to magnetic random memory field.The spin orbit layer of the present application adopts magnetic material with perpendicular magnetic anisotropy, when writing, write current is applied in plane by writing electrode, due to nonlinear spin polarization effect, the magnetization vector of spin orbit layer is greatly periodic oscillation, after current is cut off, magnetization vector is determined to relax to the nearest steady state from current phase, information writing is realized;When reading, read circuit shows the voltage state corresponding to the state of magnetization vector, information reading is realized;The present application solves the problem of material symmetry restriction and process sensitivity faced by magnetic memory device when determining flip without external field.The present application widens material selection range, realizes the determining flip without external magnetic field, improves interface efficiency and write energy efficiency, and simplifies device process structure;The present application is applied to MRAM array design and peripheral integrated circuit.

The invention provides a material with a complete magnetic compensation effect and high longitudinal spin polarization and a preparation method and application thereof, the chemical formula of the material is Mn2-aVaFe1-bXbGa1-cYc, X is selected from one or more of Cu, Ni, Co, Cr and Ti, and Y is selected from one or more of Al, Ge, In, Si, Pb, Sb and Sn. The material provided by the invention has high longitudinal spin polarization, high spin polarization and a complete compensation effect, and is a series of magnetic semi-metal Heusler materials substituted by different elements; the Curie temperature, the magnetic compensation temperature, the longitudinal electric transport property, the Hall parameter and other performances of the material can be optimized and continuously adjustable through regulation and control of mechanisms such as components and temperature, and the material has a complete compensation effect. Therefore, the material has wide application prospects in spin polarization injection, magnetic sensors, field-effect tubes, magnetic random memories and other spintronics devices.

The application discloses a magnetic tunnel junction and a magnetic memory, the magnetic tunnel junction comprising a spin orbit coupling layer, a free layer, a barrier layer, a reference layer and a pinned layer which are sequentially stacked; further comprising at least one magnetic layer, the at least one magnetic layer comprising a first spin polarization enhancement layer and / or a second spin polarization enhancement layer, the first spin polarization enhancement layer being located between the spin orbit coupling layer and the free layer, the magnetization direction of the first spin polarization enhancement layer being the same as that of the free layer; the second spin polarization enhancement layer being located between the reference layer and the pinned layer, the magnetization direction of the second spin polarization enhancement layer being the same as that of the reference layer. The magnetic tunnel junction provided by the application has improved tunneling magnetoresistance.

The invention discloses a geomagnetic field accurate measurement method and device based on optical detection helium-3, and the method comprises the steps: achieving nuclear spin polarization through optical pumping and metastable state spin exchange, applying a pulse magnetic field to excite a helium-3 nuclear spin FID signal, and detecting the frequency and relaxation rate of the helium-3 nuclear spin FID signal; a theoretical model is constructed, parameters such as helium 3 atomic number density and relaxation rate in a gas chamber are measured in combination with spin exchange frequency shift and a relaxation phenomenon, a conversion formula of FID frequency and helium 3 ground state Larmor frequency is established based on the parameters, and frequency shift caused by spin exchange is corrected; the residual magnetism of the probe is inversed through multi-angle measurement, errors introduced by the residual magnetism are eliminated, and finally accurate measurement of the geomagnetic field is achieved. The invention provides a geomagnetic field accurate measurement method and device based on optical detection helium-3, which are used for carrying out complete system error correction and elimination aiming at spin exchange and probe residual magnetism system errors in an optical detection type geomagnetic field helium-3 magnetometer, and can solve the problem that the accuracy and the sensitivity of geomagnetic field measurement are difficult to consider at the same time.

A method for measuring the equilibrium spin polarizability of alkali metal atoms based on the steady-state response of a triaxial magnetic field is proposed. First, the device is adjusted to its normal operating state. Then, DC magnetic fields are applied in the x, y, and y, z directions, with the magnitude of the magnetic field in the z direction varied. The ratio of the device outputs in the two applications is fitted with the square of the applied magnetic field in the z direction to obtain the total relaxation rate. Next, the pressure broadening of the alkali metal gas cell is obtained at low temperature using the optical depth of the detection light. Then, at the normal operating temperature, the power of the detection light is varied, and the transfer coefficient is established using the pressure broadening and the fitting slope. Finally, a DC magnetic field is applied along the y-axis with varying magnitude, and the device output is fitted with the B... y‑fit The relationship between these factors, combined with the transfer coefficient, yields the final equilibrium spin polarization. This method does not disrupt the SERF states required for normal system operation, is unaffected by temperature, and has small measurement errors. It provides a more accurate measurement method for further optimizing SERF magnetic field measurement devices to improve their sensitivity.

The present disclosure relates to a method for controlling multi electrons spin selective reactions, a coating and an electrode. The attachment between the chiral coating surface layer and the electrode is configured for causing charge rearrangement, spin polarization of the electrode surface, controllably affecting coherent and entangled properties of the multi-electrons being injected from or to the electrode surface thereby modifying the rate of the multi electrons spin selective reactions and product selectivity.